CN108132760B - Method and system for improving SSD (solid State disk) reading performance - Google Patents
Method and system for improving SSD (solid State disk) reading performance Download PDFInfo
- Publication number
- CN108132760B CN108132760B CN201810052843.4A CN201810052843A CN108132760B CN 108132760 B CN108132760 B CN 108132760B CN 201810052843 A CN201810052843 A CN 201810052843A CN 108132760 B CN108132760 B CN 108132760B
- Authority
- CN
- China
- Prior art keywords
- read
- request
- command
- page
- flash
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/10—Address translation
- G06F12/1009—Address translation using page tables, e.g. page table structures
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
Abstract
The embodiment of the application discloses a method and a system for improving SSD reading performance, comprising the following steps: initiating a read request to an FTL layer according to the length of read data corresponding to the read command and the logic page; the FTL layer initiates a secondary read request to the NFC layer according to the received read request; and the NFC selects different modes to read the Flash data according to whether the read command in the secondary read request has a 4K read mark. When the length of the read data corresponding to the command is small and the read data are in the same logical page, the common single-page mode can be selected, otherwise, the multi-page concurrent mode is selected, so that the problem that the small-length data in the same logical page use the multi-page concurrent mode is solved, the time of random reading of the SSD in small IO is saved, and the reading performance of the SSD is improved.
Description
Technical Field
The present application relates to the field of solid state disk technologies, and in particular, to a method and a system for improving SSD read performance.
Background
Compared with the conventional mechanical hard disk, the SSD (Solid State Drives) has a series of advantages such as high performance, high reliability, shock resistance, etc., and is now widely replacing the market and application of the mechanical hard disk. For the storage access of large files, the bandwidth of the SSD is dozens of times of that of the traditional hard disk, and the advantages are obvious.
In the prior art, in order to improve the read performance of the SSD, for example, starting from front-end command processing, a Flash Translation Layer (FTL) algorithm is optimized, a command data path is optimized for some IO scenarios in a targeted manner, and delay is reduced. And the most fundamental storage carrier of the SSD, namely Nand Flash, is influenced, the interface frequency of the Nand Flash is improved, and the performance of the SSD can be greatly improved by adopting multi-page concurrent reading or programming operation of the Flash.
The currently common Nand particles can support two-page or four-page concurrent reading or programming operation, and basically use multi-page concurrent reading or programming operation of Flash, so that the read-write bandwidth of Flash or a system is improved to about 2 times or 4 times of single-page operation. However, not all scenes are suitable for multi-page operation, but there are many scenes for storing small files in SSD use, for example, the NTFS file system format used by Win7 and above systems, the system default file is 4K (less than 4K is automatically filled to 4K), and for some small IO scenes, for example, when the IO size is smaller than the page size of Flash, only a single page of data can be read to meet the requirement. In the multi-page concurrent reading operation, the latency of multi-page concurrent reading is slightly longer than that of common single-page reading, the multi-page reading operation sequentially sends page selection commands, and the interval time is reserved between each page selection, so that the reading performance of the SSD is reduced.
Disclosure of Invention
The application provides a method and a system for improving SSD reading performance, and aims to solve the problems that the conventional SSD consumes long time when small IO random reading is performed, and the SSD reading performance is reduced.
In order to solve the technical problem, the embodiment of the application discloses the following technical scheme:
a method of improving SSD read performance, the method comprising: initiating a read request to an FTL layer according to the length of read data corresponding to the read command and the logic page; the FTL layer initiates a secondary read request to an NFC (Nand Flash Controller) layer according to the received read request; and the NFC selects different modes to read the Flash data according to whether the read command in the secondary read request has a 4K read mark.
Optionally, the initiating a read request to the FTL layer according to the length of the read data corresponding to the read command and the logical page where the read request is located includes: if the read data length is 4K or less than 4K and the read data ranges are all in the same logical page, marking the read command as 4K read and initiating a read request to the FTL layer; if the read data length is greater than 4K and/or the read data ranges are not on the same logical page, no marking is performed and a read request is initiated to the FTL layer.
Optionally, the FTL layer initiates a secondary read request to the NFC layer according to the received read request, including: the FTL layer acquires a logical page address corresponding to a logical page where read data is located; converting the logical page address into a Flash physical address; and initiating a read request to the NFC layer according to the physical address.
Optionally, the NFC selects different modes to read Flash data according to whether a 4K read flag exists in the read command in the secondary read request, including: if the read command has a 4K read mark, switching to a common single-page read mode; and if the read command does not have the 4K read mark, sending a plurality of pages to Flash and sending a read request.
Optionally, the switching to the normal single page read mode includes: judging whether the read command meets a fast read operation; if the read command meets the requirement of fast read operation, sending a fast read operation request to Flash; and if the read command does not meet the fast read operation, sending a single-page read command to Flash.
A system to improve SSD read performance, the system comprising: the first read request module is used for initiating a read request to the FTL layer according to the length of read data corresponding to the read command and the logic page where the read data is located; the second read request module is used for the FTL layer to initiate a secondary read request to the NFC layer according to the received read request; and the read command processing module is used for selecting different modes to read Flash data by the NFC according to whether the read command in the secondary read request has a 4K read mark.
Optionally, the first read request module includes: the read command processing unit is used for marking the read command as 4K read if the length of the read data is 4K or less than 4K and the ranges of the read data are in the same logical page; if the read data length is greater than 4K and/or the read data range is not in the same logical page, not marking; the first read request unit is configured to initiate a read request to the FTL layer.
Optionally, the second read request module includes: an obtaining unit, configured to obtain, by the FTL layer, a logical page address corresponding to a logical page where read data is located; the conversion unit is used for converting the logical page address into a Flash physical address; and the second read request unit is used for initiating a read request to the NFC layer according to the physical address.
Optionally, the read command processing module includes: the judging unit is used for judging whether the reading command has a 4K reading mark or not; the first switching unit is used for switching to a common single page reading mode if the reading command has a 4K reading mark; and the second switching unit is used for sending the multiple pages to Flash and sending the reading request if the reading command does not have the 4K reading mark.
Optionally, the first switching unit comprises: the judging subunit is used for judging whether the read command meets the fast read operation; the first read request subunit is used for sending a fast read operation request to Flash if the read command meets the fast read operation; and the second read request subunit is used for sending a single-page read request to Flash if the read command does not meet the fast read operation.
As can be seen from the foregoing technical solutions, a method and a system for improving SSD read performance provided in the embodiments of the present application include: initiating a read request to an FTL layer according to the length of read data corresponding to the read command and the logic page; the FTL layer initiates a secondary read request to the NFC layer according to the received read request; and the NFC selects different modes to read the Flash data according to whether the read command in the secondary read request has a 4K read mark. When the length of the read data corresponding to the command is small and the read data are in the same logical page, the common single-page mode can be selected, otherwise, the multi-page concurrent mode is selected, so that the problem that the small-length data in the same logical page use the multi-page concurrent mode is solved, the time of random reading of the SSD in small IO is saved, and the reading performance of the SSD is improved.
Drawings
In order to more clearly explain the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious to those skilled in the art that other drawings can be obtained according to the drawings without any creative effort.
Fig. 1 is a schematic flowchart of an embodiment of a method for improving SSD read performance provided herein;
fig. 2 is a schematic structural diagram of an embodiment of a system for improving SSD read performance according to the present application.
Detailed Description
The present application will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a schematic flow chart of an embodiment provided by the present application, as shown in fig. 1, the method includes:
s101, initiating a read request to an FTL layer according to the length of read data corresponding to the read command and the logic page.
The page size of Flash currently used is mostly an integral multiple of 4KB, and is generally 4KB \8KB \16KB + redundant space (the redundant space is mostly used for storing data ECC check codes or Flag, and is omitted here). The file system format of much of the data in the application is stored and accessed in a 4K aligned manner. In order to match with system application and optimize performance, an FTL layer Mapping algorithm of the SSD adopts 4K Mapping, namely host data is divided into logical pages with the size of 4KB according to the LBA, each logical page is mapped to a Flash physical address, and the host data is managed in this way. Therefore, when FTL layer management data is written into Flash, all logic page data is definitely stored in the same Flash page and cannot be stored across pages. The performance optimization that the approach presented herein can support is for the following: the read data range of the IO command falls in the scene of the same logical page, namely random reading of 4K or less than 4K, so that only a corresponding Flash page read command can be sent when data is read.
In this embodiment, if the length of the read data is 4K or less than 4K and the read data ranges are all in the same logical page, the read command is marked as 4K read, and a read request is initiated to the FTL layer; if the read data length is greater than 4K and/or the read data ranges are not on the same logical page, no marking is performed and a read request is initiated to the FTL layer.
And S102, the FTL layer initiates a secondary read request to the NFC layer according to the received read request.
The FTL layer acquires a logical page address corresponding to a logical page where read data is located; and converting the logical page address into a Flash physical address, wherein the Flash physical address comprises a physical block address, a physical address and an offset address in the physical page. And initiating a read request to the NFC layer according to the physical address.
And S103, selecting different modes to read Flash data by the NFC according to whether the read command in the secondary read request has a 4K read mark.
If the read command has a 4K read mark, switching to a common single-page read mode; and if the read command does not have the 4K read mark, sending a plurality of pages to Flash and sending a read request. If the mode is switched to a common single-page reading mode, judging whether the reading command meets the requirement of quick reading operation; if the read command meets the requirement of fast read operation, sending a fast read operation request to Flash; and if the read command does not meet the fast read operation, sending a single-page read command to Flash.
And (4) calculating the theoretical IOPS on the Flash side under the 4K random reading mode. Reading data in the same logical page, then the data is mapped to the same Flash page definitely, there is no channel or multi-CE concurrence according to the length of the read data, then one 4K read is completed, the required time is the latency time TR of Flash and the transmission time Ttrf of 4KB data, and the IOPS read speed V4K is as follows:
wherein
When the frequency of a Flash interface is fixed, the transmission bandwidth is fixed, and the time which can be saved by us is TR. If the Flash interface bandwidth is 266MB/s, the typical Ttrf is about 18 microseconds. The latency time TR for reading data from the Flash array to the Flash cache accounts for a large proportion, generally the TR is different from dozens of microseconds to more than 100 microseconds, and each Flash is different due to design and page length. As can be seen from practical use, the TR of the multi-page read concurrency is longer than that of the single-page read, and the multi-page read selection command is sent, and the time is 0.5-1 microsecond more for each page.
The fast reading can only read half of the data in the Flash page to the Flash cache, and compared with the method of reading the data of the whole Flash page from the Flash array to the Flash cache, the fast reading operation greatly reduces the reading latency time of the Flash. The fast reading function is applied when reading 4K, and the speed can be much faster.
Taking B16A Flash as an example, the fast read latency of B16A Flash is 51 microseconds, and the normal page read latency is 68 microseconds. The time difference reaches 17 microseconds, the Flash response is faster by using the quick read operation, and the IOPS performance of 4K random reading is obviously improved.
The fast read function is an advanced feature of Flash, and there are two ways to enable this function: firstly, the fast read function characteristic address (the characteristic and description supported in the particle operation manual are provided, and the magnesium optical particle fast read function characteristic address is F5h) is set and enabled by a configuration characteristic command (the setting characteristic command of general Flash is 0xEF), and firstly, the fast read operation command is enabled. Some 3D Nand have independent fast read operation command, can directly use this command to read data from Flash, convenient to use. If enabled by the first mode, use is made of a single page read command.
The fast read function reads half of the data in a page at a time. If the size of the Flash page is 16KB + the redundant space, 16KB is the user data length, and the redundant space is used for ECC check. One hundred more bytes of ECC check data are required after every KB of data in the master architecture based on error correction capability. The Flash page is divided into 3 data segments with the length of 8KB + redundant space/2 by the quick reading function to be read, the initial address of each reading is respectively started from 0KB, 4KB + redundant space/4 and 8KB + redundant space/2, and the data address of each 4K reading can be ensured to just fall in the several intervals. For example, the length of the redundant space of B16A is 2208 bytes, and then the fast read operation may read 9296 bytes long data from the Flash array to the Flash cache from the position where the Flash page start address is 0 bytes or 4648 bytes or 9296 bytes.
As can be seen from the foregoing embodiments, a method for improving SSD read performance provided by this embodiment includes: initiating a read request to an FTL layer according to the length of read data corresponding to the read command and the logic page; the FTL layer initiates a secondary read request to the NFC layer according to the received read request; and the NFC selects different modes to read the Flash data according to whether the read command in the secondary read request has a 4K read mark. When the length of the read data corresponding to the command is small and the read data are in the same logical page, the common single-page mode can be selected, otherwise, the multi-page concurrent mode is selected, so that the problem that the small-length data in the same logical page use the multi-page concurrent mode is solved, the time of random reading of the SSD in small IO is saved, and the reading performance of the SSD is improved.
Corresponding to the embodiment of the method for improving the SSD read performance provided in the foregoing embodiment, the embodiment of the present application further provides an embodiment of a system for improving the SSD read performance.
Referring to fig. 2, the system includes: a first read request module 201, a second read request module 202 and a read command processing module 203. The first read request module 201 is configured to initiate a read request to the FTL layer according to the length of read data corresponding to the read command and the logical page where the read data is located; the second read request module 202 is configured to initiate, by the FTL layer, a secondary read request to the NFC layer according to the received read request; the read command processing module 203 is configured to select different modes to read Flash data according to whether the read command in the secondary read request has a 4K read flag or not by the NFC.
The first read request module 201 includes: a read command processing unit and a first read request unit. The read command processing unit is used for marking the read command as 4K read if the read data length is 4K or less than 4K and the read data ranges are in the same logical page; if the read data length is greater than 4K and/or the read data ranges are not in the same logical page, then no marking is performed. The first read request unit is configured to initiate a read request to an FTL layer.
The second read request module comprises: the device comprises an acquisition unit, a conversion unit and a second read request unit. The obtaining unit is configured to obtain, by the FTL layer, a logical page address corresponding to a logical page where the read data is located; the conversion unit is used for converting the logical page address into a Flash physical address; the second read request unit is configured to initiate a read request to the NFC layer according to the physical address.
The read command processing module includes: the device comprises a judging unit, a first switching unit and a second switching unit. The judging unit is used for judging whether the reading command has a 4K reading mark; and the first switching unit is used for switching to a common single page reading mode if the reading command has a 4K reading mark. The first switching unit includes: the device comprises a judgment subunit, a first read request subunit and a second read request subunit. The judging subunit is configured to judge whether the read command satisfies a fast read operation; the first read request subunit is configured to send a fast read operation request to Flash if the read command satisfies the fast read operation; and the second read request subunit is configured to send a single-page read request to Flash if the read command does not satisfy the fast read operation. And the second switching unit is used for sending a multi-page concurrent read request to Flash if the read command does not have a 4K read mark.
As can be seen from the foregoing embodiments, the system for improving the SSD read performance provided by this embodiment includes: a first read request module 201, a second read request module 202 and a read command processing module 203. The first read request module 201 is configured to initiate a read request to the FTL layer according to the length of read data corresponding to the read command and the logical page where the read data is located; the second read request module 202 is configured to initiate, by the FTL layer, a secondary read request to the NFC layer according to the received read request; the read command processing module 203 is configured to select different modes to read Flash data according to whether the read command in the secondary read request has a 4K read flag or not by the NFC. When the length of the read data corresponding to the command is small and the read data are in the same logical page, the read command processing module 203 can select a common single-page mode, otherwise, a multi-page concurrent mode is selected, so that the problem that small-length data in the same logical page use the multi-page concurrent mode is solved, the time of random reading of the SSD at small IO is saved, and the reading performance of the SSD is improved.
In a specific implementation provided by this embodiment, the present application further provides a computer storage medium, where the computer storage medium may store a program, and the program may include some or all of the steps in the embodiments of the calling method provided by this application when executed. The storage medium may be a magnetic disk, an optical disk, a read-only memory (ROM) or a Random Access Memory (RAM).
Those skilled in the art will clearly understand that the techniques in the embodiments of the present application may be implemented by way of software plus a required general hardware platform. Based on such understanding, the technical solutions in the embodiments of the present application may be essentially implemented or a part contributing to the prior art may be embodied in the form of a software product, which may be stored in a storage medium, such as a ROM/RAM, a magnetic disk, an optical disk, etc., and includes several instructions for enabling a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the method described in the embodiments or some parts of the embodiments of the present application.
The same and similar parts in the various embodiments in this specification may be referred to each other. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and the relevant points can be referred to the description in the method embodiment.
The above-described embodiments of the present application do not limit the scope of the present application.
Claims (10)
1. A method of improving SSD read performance, the method comprising:
initiating a read request to an FTL layer according to the length of read data corresponding to the read command and the logic page;
the FTL layer initiates a secondary read request to the NFC layer according to the received read request;
the NFC selects different modes to read Flash data according to whether the read command in the secondary read request has a 4K read mark;
the NFC is a storage controller.
2. The method according to claim 1, wherein the initiating a read request to an FTL layer according to the length of the read data corresponding to the read command and the logical page where the read data is located comprises:
if the read data length is 4K or less than 4K and the read data ranges are all in the same logical page, marking the read command as 4K read and initiating a read request to the FTL layer;
if the read data length is greater than 4K and/or the read data ranges are not on the same logical page, no marking is performed and a read request is initiated to the FTL layer.
3. The method of claim 2, wherein the FTL layer initiates a secondary read request to the NFC layer according to the received read request, and the method comprises:
the FTL layer acquires a logical page address corresponding to a logical page where read data is located;
converting the logical page address into a Flash physical address;
and initiating a read request to the NFC layer according to the physical address.
4. The method for improving the SSD read performance of claim 1, wherein the NFC selects different modes to read Flash data according to whether a 4K read flag exists in a read command in the secondary read request, and the method includes:
if the read command has a 4K read mark, switching to a common single-page read mode;
and if the read command does not have the 4K read mark, sending a plurality of pages to Flash and sending a read request.
5. The method of claim 4, wherein switching to a normal single page read mode comprises:
judging whether the read command meets a fast read operation;
if the read command meets the requirement of fast read operation, sending a fast read operation request to Flash;
and if the read command does not meet the fast read operation, sending a single-page read command to Flash.
6. A system to improve SSD read performance, the system comprising:
the first read request module is used for initiating a read request to the FTL layer according to the length of read data corresponding to the read command and the logic page where the read data is located;
the second read request module is used for the FTL layer to initiate a secondary read request to the NFC layer according to the received read request;
the read command processing module is used for selecting different modes to read Flash data by the NFC according to whether a 4K read mark exists in the read command in the secondary read request;
the NFC is a storage controller.
7. The system for improving SSD read performance of claim 6, wherein the first read request module comprises:
the read command processing unit is used for marking the read command as 4K read if the length of the read data is 4K or less than 4K and the ranges of the read data are in the same logical page; if the read data length is greater than 4K and/or the read data range is not in the same logical page, not marking;
the first read request unit is configured to initiate a read request to the FTL layer.
8. The system of claim 7, wherein the second read request module comprises:
an obtaining unit, configured to obtain, by the FTL layer, a logical page address corresponding to a logical page where read data is located;
the conversion unit is used for converting the logical page address into a Flash physical address;
and the second read request unit is used for initiating a read request to the NFC layer according to the physical address.
9. The system for improving SSD read performance of claim 6, wherein the read command processing module comprises:
the judging unit is used for judging whether the reading command has a 4K reading mark or not;
the first switching unit is used for switching to a common single page reading mode if the reading command has a 4K reading mark;
and the second switching unit is used for sending the multiple pages to Flash and sending the reading request if the reading command does not have the 4K reading mark.
10. The system for improving SSD read performance of claim 9, wherein the first switching unit comprises:
the judging subunit is used for judging whether the read command meets the fast read operation;
the first read request subunit is used for sending a fast read operation request to Flash if the read command meets the fast read operation;
and the second read request subunit is used for sending a single-page read request to Flash if the read command does not meet the fast read operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810052843.4A CN108132760B (en) | 2018-01-19 | 2018-01-19 | Method and system for improving SSD (solid State disk) reading performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810052843.4A CN108132760B (en) | 2018-01-19 | 2018-01-19 | Method and system for improving SSD (solid State disk) reading performance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108132760A CN108132760A (en) | 2018-06-08 |
| CN108132760B true CN108132760B (en) | 2021-03-12 |
Family
ID=62400802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810052843.4A Active CN108132760B (en) | 2018-01-19 | 2018-01-19 | Method and system for improving SSD (solid State disk) reading performance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108132760B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108959117B (en) * | 2018-06-22 | 2021-01-19 | 深圳忆联信息系统有限公司 | H2D write operation acceleration method and device, computer equipment and storage medium |
| CN110750214A (en) * | 2019-09-27 | 2020-02-04 | 广州妙存科技有限公司 | Method for giving consideration to sequential reading and random reading performances of eMMC (enhanced multimedia card) memory |
| CN113485653B (en) * | 2021-09-08 | 2021-11-19 | 苏州浪潮智能科技有限公司 | SSD, application scene identification method and device thereof, and storage medium |
| CN114791790B (en) * | 2022-06-22 | 2022-09-09 | 北京得瑞领新科技有限公司 | SSD (solid State disk) reading performance optimization method and device, storage medium and storage equipment |
| CN116364163B (en) * | 2023-04-17 | 2023-11-10 | 武汉喻芯半导体有限公司 | Error correction method and system based on NAND flash memory controller |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102567257A (en) * | 2011-12-26 | 2012-07-11 | 华中科技大学 | Method for controlling data reading and writing of multi-channel solid-state disc |
| CN102968396A (en) * | 2012-10-30 | 2013-03-13 | 北京华芯微特科技有限公司 | Special data transmission module from flash chip to static random access memory (SRAM) chip |
| US20160035417A1 (en) * | 2014-07-29 | 2016-02-04 | Samsung Electronics Co., Ltd. | Memory device and method of operating the memory device |
| CN105630704A (en) * | 2015-06-10 | 2016-06-01 | 上海磁宇信息科技有限公司 | Storage device and read-write method applying block-based logic physical address comparison table |
| CN105955897A (en) * | 2016-05-23 | 2016-09-21 | 深圳市华星光电技术有限公司 | Data memory access method, apparatus and system |
| CN107168653A (en) * | 2017-05-24 | 2017-09-15 | 记忆科技(深圳)有限公司 | The method and solid state hard disc of a reading performance in a kind of raising solid state hard disc |
-
2018
- 2018-01-19 CN CN201810052843.4A patent/CN108132760B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102567257A (en) * | 2011-12-26 | 2012-07-11 | 华中科技大学 | Method for controlling data reading and writing of multi-channel solid-state disc |
| CN102968396A (en) * | 2012-10-30 | 2013-03-13 | 北京华芯微特科技有限公司 | Special data transmission module from flash chip to static random access memory (SRAM) chip |
| US20160035417A1 (en) * | 2014-07-29 | 2016-02-04 | Samsung Electronics Co., Ltd. | Memory device and method of operating the memory device |
| CN105630704A (en) * | 2015-06-10 | 2016-06-01 | 上海磁宇信息科技有限公司 | Storage device and read-write method applying block-based logic physical address comparison table |
| CN105955897A (en) * | 2016-05-23 | 2016-09-21 | 深圳市华星光电技术有限公司 | Data memory access method, apparatus and system |
| CN107168653A (en) * | 2017-05-24 | 2017-09-15 | 记忆科技(深圳)有限公司 | The method and solid state hard disc of a reading performance in a kind of raising solid state hard disc |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108132760A (en) | 2018-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108132760B (en) | Method and system for improving SSD (solid State disk) reading performance | |
| US20220129374A1 (en) | Memory system, data storage device, user device and data management method thereof | |
| US10282128B2 (en) | Data deduplication | |
| US10795599B2 (en) | Data migration method, host and solid state disk | |
| US10628326B2 (en) | Logical to physical mapping | |
| JP6224253B2 (en) | Speculative prefetching of data stored in flash memory | |
| CN106354615B (en) | Solid state disk log generation method and device | |
| KR102688570B1 (en) | Memory System and Operation Method thereof | |
| US20190317892A1 (en) | Memory system, data processing system, and operating method of memory system | |
| EP3142014B1 (en) | Method, device and user equipment for reading/writing data in nand flash | |
| US20130103893A1 (en) | System comprising storage device and related methods of operation | |
| US20170123990A1 (en) | Data storage device and operating method thereof | |
| KR20230040057A (en) | Apparatus and method for improving read performance in a system | |
| CN111026678B (en) | Cache design method and device based on solid state disk and computer equipment | |
| US11941273B2 (en) | Variable capacity Zone Namespace (ZNS) flash storage data path | |
| KR102086778B1 (en) | Computing System including Storage System and Writing Method of the same | |
| CN116225984A (en) | Address translation | |
| US11036629B2 (en) | Controller, memory system and operating method thereof | |
| TWI604306B (en) | Data management method for data storage device and memory controller | |
| CN117632809B (en) | Memory controller, data reading method and memory device | |
| US20230359393A1 (en) | Memory system and operating method of the memory system | |
| EP4273702A1 (en) | Operating method of memory device for managing map data of each of plurality of storage devices, computing system including memory device, and operating method of computing system | |
| KR20230063857A (en) | Storage device and electronic device | |
| KR20220159268A (en) | Host device, storage device and electronic device | |
| CN117453133A (en) | Snapshot method, snapshot system, electronic device and computer-readable storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |