CN108134589B - Film bulk acoustic resonator - Google Patents
Film bulk acoustic resonator Download PDFInfo
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- CN108134589B CN108134589B CN201810113583.7A CN201810113583A CN108134589B CN 108134589 B CN108134589 B CN 108134589B CN 201810113583 A CN201810113583 A CN 201810113583A CN 108134589 B CN108134589 B CN 108134589B
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- bulk acoustic
- film bulk
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- acoustic resonator
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- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 7
- 230000002238 attenuated effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a film bulk acoustic resonator, which comprises a substrate, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially arranged from bottom to top, wherein a reflecting interface is arranged between the substrate and the bottom electrode, and at least one of the bottom electrode, the piezoelectric layer and the top electrode has a shape different from that of other layers. On the premise of not additionally increasing the number of process layers, the shape of the upper electrode, the piezoelectric layer or the lower electrode is adjusted by adding the bump or the missing block, so that the energy of transverse waves is attenuated, the reflection energy of the transverse waves is reduced, and the Q value is improved.
Description
Technical Field
The invention belongs to the field of bulk acoustic wave resonators, and particularly relates to a film bulk acoustic wave resonator.
Background
With the evolution of communication frequency band, the required frequency is higher and higher, and under the requirement of high frequency, the resonator needs to provide better Q value to reduce the loss of the filter, so as to obtain a higher quality filter response. The conventional pattern is easy to enhance the reflected energy of the standing wave, thereby lowering the Q value.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the film bulk acoustic resonator can reduce the reflection energy of transverse waves and improve the Q value on the premise of not additionally increasing the number of process layers.
The technical scheme adopted by the invention for solving the technical problems is as follows: the utility model provides a film bulk acoustic resonator, includes basement, bottom electrode, piezoelectric layer and the top electrode that from the bottom up set gradually, wherein is equipped with reflection interface, its characterized in that between basement and the bottom electrode: at least one of the bottom electrode, the piezoelectric layer and the top electrode has a shape different from the other layers.
According to the scheme, the shapes are different and specifically: at least one bump is added.
According to the scheme, the bump is an independent bump which has a certain distance with the original structure of the layer where the bump is located.
According to the scheme, the certain distance is larger than 0 and smaller than or equal to 100 um.
According to the scheme, the bumps are connecting bumps connected to the original structure of the layer.
According to the scheme, the shapes are different and specifically: the original structure is provided with at least one segment.
According to the scheme, the lacking blocks are arranged at the edge or any position in the middle of the original structure.
According to the scheme, the height of the defect block is smaller than or equal to the thickness of the original structure.
According to the scheme, the piezoelectric layer is made of a material with piezoelectric property.
According to the scheme, the piezoelectric layer is made of AlN, AlScN, ZnO, PZT or LiNO3、LiTaO3Or BST.
The invention has the beneficial effects that: on the premise of not additionally increasing the number of process layers, the shape of the top electrode, the piezoelectric layer or the bottom electrode is adjusted by adding a bump or a missing block, so that the energy of transverse waves is attenuated, the reflection energy of the transverse waves is reduced, and the Q value is improved.
Drawings
Fig. 1 is a schematic structural diagram of a film bulk acoustic resonator.
Fig. 2 is a schematic structural diagram of a second film bulk acoustic resonator.
Fig. 3 is a schematic structural diagram of a third film bulk acoustic resonator.
Fig. 4 is a top view of the first embodiment of the invention.
Fig. 5 is a top view of a second embodiment of the present invention.
Fig. 6 is a top view of a third embodiment of the present invention.
Fig. 7 is a cross-sectional view of an AA of fig. 6.
Fig. 8 is another cross-sectional view AA of fig. 6.
Fig. 9 is a top view of a fourth embodiment of the present invention.
In the figure: 101-top electrode, 102-piezoelectric layer, 103-bottom electrode, 104-air cavity, 105-substrate, 106-Bragg reflector, 1011-top electrode outline, 1012-trimming, 1013-independent bump, 1014-connection bump, 1015-missing block, 10151-hollowed missing block and 10152-groove missing block.
Detailed Description
The invention is further illustrated by the following specific examples and figures.
Fig. 1 is a schematic structural diagram of a film bulk acoustic resonator, which includes a substrate 105, a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101, which are sequentially disposed from bottom to top, wherein a closed air cavity 104 is disposed between the substrate 105 and the bottom electrode 103 as a reflective interface.
Fig. 2 is a schematic structural diagram of a second film bulk acoustic resonator, which includes a substrate 105, a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101, which are sequentially disposed from bottom to top, wherein an air cavity 104 formed by etching a hole is disposed between the substrate 105 and the bottom electrode 103 as a reflective interface.
Fig. 3 is a schematic structural diagram of a third film bulk acoustic resonator, which includes a substrate 105, a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101, which are sequentially disposed from bottom to top, wherein a bragg mirror 106 formed by overlapping high and low acoustic resistance materials is disposed between the substrate 105 and the bottom electrode 103 as a reflective interface.
The invention provides a film bulk acoustic resonator, which comprises a substrate, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially arranged from bottom to top, wherein a reflecting interface is arranged between the substrate and the bottom electrode, and at least one of the bottom electrode, the piezoelectric layer and the top electrode has a shape different from that of the other layers. The core points of the invention are as follows: the number of process layers is not additionally increased, and the shape of at least one layer is limited, so that the energy of transverse waves is attenuated, the reflection energy of the transverse waves is reduced, and the Q value is improved.
In particular, there are many ways to make at least one layer different in shape from the other layers, and specific examples are given below for further explanation.
The first embodiment is as follows:
the present embodiment provides a film bulk acoustic resonator, as shown in fig. 4, which includes a substrate 105, a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101, which are sequentially disposed from bottom to top, wherein a reflective interface is disposed between the substrate 105 and the bottom electrode 103, and at least one bump, which is the same as an original structural material of the layer, is added to at least one layer of the bottom electrode 103, the piezoelectric layer 102, and the top electrode 101; the bump is consistent with the original structure of the layer. The process for manufacturing the bump is the same as that of other structures of the layer, and only one more bump needs to be grown during manufacturing.
In this embodiment, the bump is an independent bump having a certain distance (greater than 0, less than or equal to 100 um) with the original structure of the layer where the bump is located. Further, the individual bumps may not be limited to a square shape, and each side may have a length of 1nm to 100 um.
Taking the top electrode 101 as an example, the independent bump 1013 is disposed on the same layer as the top electrode 101, and a distance between the independent bump 1013 and the outer contour 1011 of the top electrode is greater than 0 and less than or equal to 100 um. Alternatively, one independent bump 1013 may be provided on the top electrode 101, 2 independent bumps may be provided on the piezoelectric layer 102, and 3 independent bumps may be provided on the bottom electrode 103. The number of independent bumps on each layer is not limited, and the layers and the number of layers of the independent bumps are not limited.
The piezoelectric layer is made of a material with piezoelectric properties, such as: AlN, AlScN, ZnO, PZT, LiNO3、LiTaO3And BST … …, or the like, or doped to form a material having piezoelectric properties.
This embodiment is applicable to the film bulk acoustic resonators shown in fig. 1, 2, and 3.
Example two:
the structure and principle of the present embodiment are the same as those of the first embodiment, and the difference is that: as shown in fig. 5, the bump is a connection bump connected to the original structure of the layer. The thickness of the connecting bump is consistent with that of the layer on which the connecting bump is arranged. The preparation process of the connecting bump is the same as that of other structures of the layer, and only the shape of the outer contour needs to be controlled during preparation.
The longest dimension of the connecting lug is 1nm-100 um.
Taking the top electrode 101 as an example, 3 connecting bumps 1014 are connected to arbitrary positions on the outer contour 1011 of the top electrode. Alternatively, one connection bump 1014 may be connected to the top electrode 101, 2 connection bumps may be connected to the piezoelectric layer 102, and 3 connection bumps may be connected to the bottom electrode 103. The number of the connecting bumps on each layer is not limited, and the layers and the number of the connecting bumps are not limited.
The piezoelectric layer is made of a material with piezoelectric properties, such as: AlN, AlScN, ZnO, PZT, LiNO3、LiTaO3And BST … …, or the like, or doped to form a material having piezoelectric properties.
This embodiment is applicable to the film bulk acoustic resonators shown in fig. 1, 2, and 3.
Example three:
the embodiment provides a film bulk acoustic resonator, which comprises a substrate 105, a bottom electrode 103, a piezoelectric layer 102 and a top electrode 101 which are sequentially arranged from bottom to top, wherein a reflection interface is arranged between the substrate 105 and the bottom electrode 103, at least one layer of the bottom electrode 103, the piezoelectric layer 102 and the top electrode 101 is provided with a defect block, and the defect block is positioned in an original structure and is close to the edge of an active area. The active area is well defined as: the top electrode 101, the piezoelectric layer 102 and the bottom electrode 103 overlap each other, and a reflective interface is provided under the overlapping area.
Taking the top electrode 101 as an example, as shown in fig. 6, at least one notch 1015 is provided at any position in the middle of the top electrode 101. The height of the defect 1015 is less than or equal to the thickness of the original structure. When the height of the lacking block 1015 is equal to the thickness of the original structure, as shown in fig. 7, the lacking block is a hollow lacking block 10151; when the height of the lacking block 1015 is smaller than the thickness of the original structure, as shown in fig. 8, the lacking block is a groove lacking block 10152.
This embodiment is applicable to the film bulk acoustic resonators shown in fig. 1, 2, and 3.
Example four:
the present embodiment provides a film bulk acoustic resonator, as shown in fig. 9, which includes a substrate 105, a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101, which are sequentially disposed from bottom to top, wherein a reflective interface is disposed between the substrate 105 and the bottom electrode 103, and at least one layer of the bottom electrode 103, the piezoelectric layer 102, and the top electrode 101 is provided with a missing block. Therefore, as long as the outer contour of the grown layered structure is defined in each layer process, no additional process is required.
Taking the top electrode 101 as an example, 3 cut edges 1012 are arranged on the outer contour 1011 of the top electrode, and the length of each cut edge 1012 may be the same or different. In addition, it is also possible to provide one cut edge on the top electrode 101, 2 cut edges on the piezoelectric layer 102, and 3 cut edges on the bottom electrode 103. The number of the trimming edges of each layer is not limited, and the layers and the number of the layers arranged by the trimming edges are not limited. The length of the trimming is 1nm-100 um.
The cutout at the edge of the original structure is not limited to a straight cut edge, and may have another shape such as a cutout corner.
The piezoelectric layer is made of a material with piezoelectric properties, such as: AlN, AlScN, ZnO, PZT, LiNO3、LiTaO3And BST … …, or the like, or doped to form a material having piezoelectric properties.
This embodiment is applicable to the film bulk acoustic resonators shown in fig. 1, 2, and 3.
The above embodiments are only used for illustrating the design idea and features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the content of the present invention and implement the present invention accordingly, and the protection scope of the present invention is not limited to the above embodiments. Therefore, all equivalent changes and modifications made in accordance with the principles and concepts disclosed herein are intended to be included within the scope of the present invention.
Claims (7)
1. The utility model provides a film bulk acoustic resonator, includes basement, bottom electrode, piezoelectric layer and the top electrode that from the bottom up set gradually, wherein is equipped with reflection interface, its characterized in that between basement and the bottom electrode: at least one of the bottom electrode, the piezoelectric layer and the top electrode has a shape different from the other layers;
the shapes are different and specifically: adding at least 2 mutually independent lugs;
the bump is an independent bump which has a certain distance with the original structure of the layer where the bump is located.
2. The film bulk acoustic resonator of claim 1, wherein: the certain distance is more than 0 and less than or equal to 100 mu m.
3. The film bulk acoustic resonator of claim 1, wherein: the thickness of the bump is consistent with that of the layer on which the bump is arranged.
4. The film bulk acoustic resonator of claim 1, wherein: the piezoelectric layer is made of a material with piezoelectric properties.
5. The film bulk acoustic resonator of claim 4, wherein: the piezoelectric layer is made of AlN, AlScN, ZnO, PZT or LiNO3、LiTaO3Or BST.
6. The film bulk acoustic resonator of claim 1, wherein: the lug is square.
7. The film bulk acoustic resonator of claim 6, wherein: the length of each side of the bump is 1nm-100 μm.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810113583.7A CN108134589B (en) | 2018-02-05 | 2018-02-05 | Film bulk acoustic resonator |
| JP2020555286A JP7245849B2 (en) | 2018-01-19 | 2018-12-29 | thin film piezoelectric resonator |
| PCT/CN2018/125238 WO2019141073A1 (en) | 2018-01-19 | 2018-12-29 | Film bulk acoustic resonator |
| EP18901250.3A EP3723285A4 (en) | 2018-01-19 | 2018-12-29 | Film bulk acoustic resonator |
| KR1020207018209A KR102455391B1 (en) | 2018-01-19 | 2018-12-29 | Film Bulk Acoustic Resonator |
| US16/544,984 US11539340B2 (en) | 2018-01-19 | 2019-08-20 | Film bulk acoustic resonator |
| US18/058,271 US20230091905A1 (en) | 2018-01-19 | 2022-11-23 | Acoustic device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810113583.7A CN108134589B (en) | 2018-02-05 | 2018-02-05 | Film bulk acoustic resonator |
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| Publication Number | Publication Date |
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| CN108134589A CN108134589A (en) | 2018-06-08 |
| CN108134589B true CN108134589B (en) | 2020-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810113583.7A Active CN108134589B (en) | 2018-01-19 | 2018-02-05 | Film bulk acoustic resonator |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7245849B2 (en) | 2018-01-19 | 2023-03-24 | 武漢衍熙微器件有限公司 | thin film piezoelectric resonator |
| CN111193481A (en) * | 2018-11-14 | 2020-05-22 | 天津大学 | Bulk acoustic wave resonator, filter, and electronic device |
| CN111342801A (en) * | 2018-12-19 | 2020-06-26 | 天津大学 | Bulk acoustic wave resonator with trench, filter, and electronic device |
| KR102272592B1 (en) * | 2019-01-31 | 2021-07-05 | 삼성전기주식회사 | Bulk-acoustic wave resonator |
| CN111786654B (en) * | 2019-04-04 | 2023-01-06 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and radio frequency communication system |
| CN110290449A (en) * | 2019-05-09 | 2019-09-27 | 安徽奥飞声学科技有限公司 | A kind of audio devices and electronic equipment |
| CN111030636A (en) * | 2019-07-15 | 2020-04-17 | 天津大学 | Bulk acoustic wave resonator with acoustic impedance mismatch structure, filter and electronic device |
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| CN1794572A (en) * | 2004-12-22 | 2006-06-28 | 安捷伦科技有限公司 | Acoustic resonator performance enhancement using selective metal etch |
| GB2427773A (en) * | 2005-06-23 | 2007-01-03 | Avago Technologies Wireless Ip | Acoustic resonator performance enhancement using alternating frame structure |
| CN1951005A (en) * | 2004-05-07 | 2007-04-18 | 英特尔公司 | Forming integrated plural frequency band film bulk acoustic resonators |
| CN101361266A (en) * | 2005-12-20 | 2009-02-04 | 英特尔公司 | Frequency tuning of film bulk acoustic resonators (fbar) |
| CN107404304A (en) * | 2016-05-18 | 2017-11-28 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
| CN207869079U (en) * | 2018-02-05 | 2018-09-14 | 武汉衍熙微器件有限公司 | A kind of thin film bulk acoustic wave resonator |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4441843B2 (en) * | 2001-06-15 | 2010-03-31 | 宇部興産株式会社 | Thin film acoustic resonator |
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- 2018-02-05 CN CN201810113583.7A patent/CN108134589B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1951005A (en) * | 2004-05-07 | 2007-04-18 | 英特尔公司 | Forming integrated plural frequency band film bulk acoustic resonators |
| CN1794572A (en) * | 2004-12-22 | 2006-06-28 | 安捷伦科技有限公司 | Acoustic resonator performance enhancement using selective metal etch |
| GB2427773A (en) * | 2005-06-23 | 2007-01-03 | Avago Technologies Wireless Ip | Acoustic resonator performance enhancement using alternating frame structure |
| CN101361266A (en) * | 2005-12-20 | 2009-02-04 | 英特尔公司 | Frequency tuning of film bulk acoustic resonators (fbar) |
| CN107404304A (en) * | 2016-05-18 | 2017-11-28 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
| CN207869079U (en) * | 2018-02-05 | 2018-09-14 | 武汉衍熙微器件有限公司 | A kind of thin film bulk acoustic wave resonator |
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