CN108002865B - 功能陶瓷元件及在功能陶瓷层上形成电极的方法 - Google Patents
功能陶瓷元件及在功能陶瓷层上形成电极的方法 Download PDFInfo
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- CN108002865B CN108002865B CN201711229185.3A CN201711229185A CN108002865B CN 108002865 B CN108002865 B CN 108002865B CN 201711229185 A CN201711229185 A CN 201711229185A CN 108002865 B CN108002865 B CN 108002865B
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- 238000005245 sintering Methods 0.000 claims description 27
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- 229910010272 inorganic material Inorganic materials 0.000 claims description 13
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- 239000002033 PVDF binder Substances 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 229920000747 poly(lactic acid) Polymers 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000004626 polylactic acid Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 41
- 239000002994 raw material Substances 0.000 description 8
- 239000004816 latex Substances 0.000 description 5
- 229920000126 latex Polymers 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/459—Temporary coatings or impregnations
- C04B41/4592—Temporary coatings or impregnations for masking purposes
- C04B41/4594—Temporary coatings or impregnations for masking purposes in metallisation processes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/46—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with organic materials
- C04B41/48—Macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/82—Coating or impregnation with organic materials
- C04B41/83—Macromolecular compounds
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Ceramic Capacitors (AREA)
Abstract
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CN201711229185.3A CN108002865B (zh) | 2017-11-29 | 2017-11-29 | 功能陶瓷元件及在功能陶瓷层上形成电极的方法 |
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CN201711229185.3A CN108002865B (zh) | 2017-11-29 | 2017-11-29 | 功能陶瓷元件及在功能陶瓷层上形成电极的方法 |
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CN108002865A CN108002865A (zh) | 2018-05-08 |
CN108002865B true CN108002865B (zh) | 2020-05-29 |
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CN110037351A (zh) * | 2019-04-30 | 2019-07-23 | 深圳陶陶科技有限公司 | 烟油雾化器的制备方法 |
CN114436678A (zh) * | 2020-11-04 | 2022-05-06 | Oppo广东移动通信有限公司 | 壳体组件及其制备方法和电子设备 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2901687B2 (ja) * | 1990-03-06 | 1999-06-07 | 太平洋セメント株式会社 | 積層型圧電アクチュエータ素子及びその製造方法 |
CN1528023A (zh) * | 2001-04-30 | 2004-09-08 | ���տ�˹�ɷ�����˾ | 用于电气部件的钝化材料及多层结构的压电部件 |
CN1837135A (zh) * | 2001-05-25 | 2006-09-27 | 京陶瓷株式会社 | 制造陶瓷叠层制品的方法、叠层电子元件及其制造方法 |
CN102148081A (zh) * | 2010-11-11 | 2011-08-10 | 深圳顺络电子股份有限公司 | 一种叠层片式陶瓷电子元器件的制造方法 |
CN104649678A (zh) * | 2013-11-21 | 2015-05-27 | 深圳光启创新技术有限公司 | 在陶瓷材料表面形成导电几何结构的方法以及陶瓷基超材料 |
CN105428166A (zh) * | 2015-12-28 | 2016-03-23 | 深圳顺络电子股份有限公司 | 一种片式熔断器制造方法 |
CN106716660A (zh) * | 2014-08-29 | 2017-05-24 | 天津威盛电子有限公司 | 层叠式压电陶瓷元件 |
-
2017
- 2017-11-29 CN CN201711229185.3A patent/CN108002865B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2901687B2 (ja) * | 1990-03-06 | 1999-06-07 | 太平洋セメント株式会社 | 積層型圧電アクチュエータ素子及びその製造方法 |
CN1528023A (zh) * | 2001-04-30 | 2004-09-08 | ���տ�˹�ɷ�����˾ | 用于电气部件的钝化材料及多层结构的压电部件 |
CN1837135A (zh) * | 2001-05-25 | 2006-09-27 | 京陶瓷株式会社 | 制造陶瓷叠层制品的方法、叠层电子元件及其制造方法 |
CN102148081A (zh) * | 2010-11-11 | 2011-08-10 | 深圳顺络电子股份有限公司 | 一种叠层片式陶瓷电子元器件的制造方法 |
CN104649678A (zh) * | 2013-11-21 | 2015-05-27 | 深圳光启创新技术有限公司 | 在陶瓷材料表面形成导电几何结构的方法以及陶瓷基超材料 |
CN106716660A (zh) * | 2014-08-29 | 2017-05-24 | 天津威盛电子有限公司 | 层叠式压电陶瓷元件 |
CN105428166A (zh) * | 2015-12-28 | 2016-03-23 | 深圳顺络电子股份有限公司 | 一种片式熔断器制造方法 |
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Effective date of registration: 20201014 Address after: 261031 north of Yuqing street, east of Dongming Road, high tech Zone, Weifang City, Shandong Province (Room 502, Geer electronic office building) Patentee after: GoerTek Optical Technology Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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Effective date of registration: 20210707 Address after: F / F, phase II, Qingdao International Innovation Park, 1 Keyuan Weiyi Road, Laoshan District, Qingdao City, Shandong Province, 266104 Patentee after: Geer Microelectronics Co.,Ltd. Address before: 261031 north of Yuqing street, east of Dongming Road, high tech Zone, Weifang City, Shandong Province (Room 502, Geer electronics office building) Patentee before: GoerTek Optical Technology Co.,Ltd. |