CN107979346A - A kind of reactatron circuit - Google Patents
A kind of reactatron circuit Download PDFInfo
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- CN107979346A CN107979346A CN201810008257.XA CN201810008257A CN107979346A CN 107979346 A CN107979346 A CN 107979346A CN 201810008257 A CN201810008257 A CN 201810008257A CN 107979346 A CN107979346 A CN 107979346A
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- 230000005669 field effect Effects 0.000 claims description 105
- 239000003990 capacitor Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003985 ceramic capacitor Substances 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
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- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The present invention provides a kind of reactatron circuit, having circuit structure simple and be easily achieved, high level triggering shut-off amplifier external interference resistance is strong, while the advantages that the noise coefficient and the linearity of amplifier can also be improved.For anti-external interference, present invention employs high level to trigger shut-off microwave amplifier.When the enabled control signal of input is less than threshold judgement level, threshold judgement circuit output low level, biasing output circuit output low level, causes amplifier to turn off；When the enabled control signal of input is more than threshold judgement level, threshold judgement circuit output high level, biasing output circuit output high level, normal amplifier operation.During using this enabled control biasing output circuit, the noise coefficient and the linearity of microwave amplifier are effectively improved, while makes entirely to enable and controls biasing output circuit simple and be easily achieved.
Description
Technical field
The present invention relates to the RF IC of wireless telecommunication system technical field, more particularly to reactatron
Technical field.
Background technology
In wireless communication system, reactatron is an essential module in receives link.With electricity
The deterioration of magnetic environment, to the antijamming capability of time-multiplexed reactatron, noise coefficient and the linearity propose
The requirement of higher.
Such as a kind of power circuit of field effect tube microwave amplifier disclosed in Chinese patent CN101034871A, circuit use
Closed loop operational amplifier U3A, U4A and U3B, U4B, the in-phase input end of U3B, are obtained by electric resistance partial pressure, its inverting input warp
Resistance is sent to the in-phase input end of U4A, and the output of U4A is connected to FET drain through resistance R6, as drain voltage；U3A
In-phase input end also obtained by electric resistance partial pressure, its output terminal is sent to the inverting input of U4B, the output of U4B through resistance, warp
Isolating diode and the grid of field-effect tube connect, as grid voltage.Shortcoming is：Product structure is complicated, in increase cost
Meanwhile it is unfavorable for product and minimizes, is lightening.
In another example a kind of microwave amplifier, structure are disclosed in Chinese patent CN1315074A, by inductor and resistance simultaneously
Couple between the source electrode of field-effect transistor and ground.Since inductor has parasitic component, inductor is total to resonant frequency fo
Shake.But since the source electrode of field-effect transistor is by the resistance eutral grounding that is connected in parallel with inductor, so even in inductor
During by resonance to open a way, field-effect transistor also works normally.Shortcoming is：Making an uproar for microwave amplifier can be caused using the circuit
Sonic system number and the linearity are poor.
At present, time-multiplexed reactatron, enabled control signal are usually that low level is effective, microwave amplification
Device turns off；During enabled control signal high level, microwave amplifier is opened.A typical WiFi RF front-end modules
RFFM8505, the low level of its enabled control signal is 0V~0.2V, and this low level effectively turns off microwave amplifier, outside
Under boundary's electromagnetic environment interference so that enabled control signal susceptible, it is difficult to ensure that the normal work of system.It is this in order to reduce
Crosstalk, generally requires anti-EMI FILTER or power filter in series or in parallel on the link for producing enabled control signal
Device, not only increases the cost of product, is unfavorable for the miniaturization of product, lightening, and the design for also virtually improving product is difficult
Degree.Another method, mostly using external level converter is used, makes low and high level switch mutually, this design not only needs
External level converter, also needs other peripheral components so that design complicates.
Therefore, the enabled control there is an urgent need to turn off amplifier during a kind of triggering of high level biases output circuit, this makes
Biasing output circuit can be controlled further to improve the noise coefficient and the linearity of amplifier at the same time.
The content of the invention
To overcome the above-mentioned problems in the prior art, the present invention provides a kind of reactatron circuit.
The present invention is achieved through the following technical solutions above-mentioned purpose：A kind of reactatron circuit, including it is enabled
Control input port (1), rf inputs mouth (2), radio frequency output port (3), No.1 DC power supply port (4), low noise are micro-
Twt amplifier circuit (5), threshold judgement circuit (6) and biasing output circuit (7), the threshold judgement circuit (6) include No. two
DC power supply port (61), enable signal input port (62) and output port (63), it is characterised in that：The biasing output electricity
Road (7) includes output port (71), input port (72), the No.1 n type field effect transistor of biasing circuit of biasing circuit
(73) and No.1 resistor (74), the No.1 n type field effect transistor (73) include the grid of No.1 n type field effect transistor
Hold (731), the source terminal (732) of No.1 n type field effect transistor and the drain electrode end (733) of No.1 n type field effect transistor, institute
Input port (72) one end for stating biasing circuit is connected with output port (63), the other end and No.1 n type field effect transistor
Gate terminal (731) be connected, the source terminal (732) of the No.1 n type field effect transistor and the one of No.1 resistor (74)
End is connected, the other end ground connection of the No.1 resistor (74).
On this basis, the drain electrode end (733) of the No.1 n type field effect transistor and No.1 n type field effect transistor
Gate terminal (731) be connected.
On this basis, the drain electrode end (733) of the No.1 n type field effect transistor and No. two DC power supply ports (61)
It is connected.
On this basis, the reactatron circuit (5) includes No. two n type field effect transistors (51), the
One inductor (52), the second inductor (53), the 3rd inductor (54), output capacitor (55), input capacitor (56) and partially
Put resistor (57), No. two n type field effect transistors (51) include No. two n type field effect transistors source terminal (511),
The drain electrode end (512) of No. two n type field effect transistors and the gate terminal (513) of No. two n type field effect transistors, the input electricity
Container (56) one end is connected with rf inputs mouth (2), and the other end is connected with the first inductor (52), first inductance
The other end of device (52) is connected with the gate terminal (513) of No. two n type field effect transistors, and the one of the bias resistor (57)
Hold and be connected between the first inductor (52) and input capacitor (56), the other end of the bias resistor (57) and biasing
The output port (71) of circuit is connected, one end of second inductor (53) and the source electrode of No. two n type field effect transistors
End (511) is connected, and other end ground connection, the 3rd inductor (54) and output capacitor (55) are coupled in parallel to No. two N-types
On the drain electrode end (512) of field-effect transistor, the other end and No.1 DC power supply port (4) phase of the 3rd inductor (54)
Connection, the other end of the output capacitor (55) are connected with radio frequency output port (3).
On this basis, the physics of the No.1 n type field effect transistor (73) and No. two n type field effect transistors (51)
Structure type is junction field effect transistor, Metal-Oxide Semiconductor field-effect transistor, heterojunction field effect transistor or
Other field-effect transistors.
On this basis, the composition of the No.1 n type field effect transistor (73) and No. two n type field effect transistors (51)
Material is silicon, germanium, GaAs, gallium nitride, indium phosphide, in group Ⅲ-Ⅴ compound semiconductor or other doped semiconductor materials
It is one or more kinds of.
On this basis, the No.1 n type field effect transistor (73), No. two n type field effect transistors (51), No.1 electricity
The way of realization of resistance device (74) and bias resistor (57) is separate type device, monolithic integrated optical circuit, hydrid integrated circuit or
The circuit of other forms.
On this basis, the construction of the output capacitor (55) and input capacitor (56) is sheet type multi-layer ceramic capacitance
Device, metal-insulating layer-metal capacitor or metal-oxide-metal capacitor.
On this basis, first inductor (52), the second inductor (53) and the 3rd inductor (54) realize shape
Formula is chip-type laminated inductance, chip wire wound inductor, on piece integrated inductor, bond-wire inductor or wafer scale rewiring inductance.
Compared with prior art, the beneficial effects of the invention are as follows：Present invention employs high level to trigger shut-off microwave amplification
Device.When the enabled control signal of input is less than threshold judgement level, threshold judgement circuit output low level, biases output circuit
Low level is exported, causes amplifier to turn off；When the enabled control signal of input is more than threshold judgement level, threshold judgement circuit
Export high level, biasing output circuit output high level, normal amplifier operation.Employ a kind of enabled control biasing output electricity
Road, improves the noise coefficient and the linearity of microwave amplifier, while makes whole enabled control biasing output circuit simple and easy
In realization.
Brief description of the drawings
Fig. 1 is the brief configuration schematic diagram of the present invention；
Fig. 2 is threshold judgement functional schematic；
Fig. 3 is the schematic diagram of enabled control biasing output circuit embodiment one；
Fig. 4 is the schematic diagram of enabled control biasing output circuit embodiment two；
Fig. 5 is the electrical block diagram of reactatron；
Fig. 6 is noise coefficient test performance index；
Fig. 7 is two tone test performance indicator；
In figure：1st, control input port is enabled, 2, rf inputs mouth, 3, radio frequency output port, 4, No.1 DC power supply
Port, 5, reactatron circuit, 6, threshold judgement circuit, 7, biasing output circuit, 61, No. two DC power supply terminals
Mouthful, 62, enable signal input port, 63, output port, 71, the output port of biasing circuit, 72, the input terminal of biasing circuit
Mouthful, 73, No.1 n type field effect transistor, 74, No.1 resistor, 731, the gate terminal of No.1 n type field effect transistor, 732,
The source terminal of No.1 n type field effect transistor, 733, the drain electrode end of No.1 n type field effect transistor, 51, No. two N-type field-effects
Transistor, the 52, first inductor, the 53, second inductor, the 54, the 3rd inductor, 55, output capacitor, 56, input capacitor,
57th, bias resistor, the source terminal of 511, No. two n type field effect transistors, the drain electrode of 512, No. two n type field effect transistors
End, the gate terminal of 513, No. two n type field effect transistors.
Embodiment
Below in conjunction with drawings and examples, the present invention will be described in further detail.It is it should be appreciated that described herein
Specific embodiment only to explain the present invention, is not intended to limit the present invention.
As shown in Fig. 1-Fig. 7, the present invention schematically illustrates a kind of reactatron circuit.
The present invention discloses a kind of reactatron circuit, as shown in Figure 1, including enabled control input port 1,
Rf inputs mouth 2, radio frequency output port 3, No.1 DC power supply port 4, reactatron circuit 5, threshold judgement
Circuit 6 and biasing output circuit 7.As shown in Fig. 2, threshold judgement circuit 6 is defeated including No. two DC power supply ports 61, enable signals
Inbound port 62 and output port 63.
As shown in figure 5, reactatron circuit 5 includes No. two n type field effect transistors 51, the first inductor
52nd, the second inductor 53, the 3rd inductor 54, output capacitor 55, input capacitor 56 and bias resistor 57, No. two N-types
Field-effect transistor 51 includes the drain electrode end of 511, No. two n type field effect transistors of source terminal of No. two n type field effect transistors
512 and the gate terminal 513 of No. two n type field effect transistors, 56 one end of input capacitor be connected with rf inputs mouth 2, separately
One end is connected with the first inductor 52, the other end of the first inductor 52 and the gate terminal 513 of No. two n type field effect transistors
It is connected, one end of bias resistor 57 is simultaneously connected between the first inductor 52 and input capacitor 56, bias resistor 57
The other end be connected with the output port 71 of biasing circuit, one end of the second inductor 53 and No. two n type field effect transistors
Source terminal 511 be connected, other end ground connection, the 3rd inductor 54 and output capacitor 55 are coupled in parallel to No. two N-type fields effects
Answer on the drain electrode end 512 of transistor, the other end of the 3rd inductor 54 is connected with No.1 DC power supply port 4, output capacitance
The other end of device 55 is connected with radio frequency output port 3.
In Fig. 3, Fig. 4 and Fig. 5, the physics knot of No.1 n type field effect transistor 73 and No. two n type field effect transistors 51
Structure type is junction field effect transistor, Metal-Oxide Semiconductor field-effect transistor, heterojunction field effect transistor or its
His field-effect transistor.The constituent material of No.1 n type field effect transistor 73 and No. two n type field effect transistors 51 is silicon, germanium,
It is one or more kinds of in GaAs, gallium nitride, indium phosphide, group Ⅲ-Ⅴ compound semiconductor or other doped semiconductor materials.
The realization of No.1 n type field effect transistor 73, No. two n type field effect transistors 51, No.1 resistor 74 and bias resistor 57
Form is separate type device, monolithic integrated optical circuit, the circuit of hydrid integrated circuit or other forms.
In Figure 5, the construction of the output capacitor 55 and input capacitor 56 is chip multilayer ceramic capacitor, gold
Category-insulator-metal capacitance or metal-oxide-metal capacitor.First inductor 52, the second inductor 53 and the 3rd inductance
The way of realization of device 54 is chip-type laminated inductance, and chip wire wound inductor, on piece integrated inductor, bond-wire inductor or wafer scale are again
Wiring inductance.
Embodiment one：
As shown in figure 3, the input port 72 of output port 71 of the biasing output circuit 7 including biasing circuit, biasing circuit,
No.1 n type field effect transistor 73 and No.1 resistor 74, it is brilliant that No.1 n type field effect transistor 73 includes the field-effect of No.1 N-type
The gate terminal 731 of body pipe, the source terminal 732 of No.1 n type field effect transistor and the drain electrode end of No.1 n type field effect transistor
733,72 one end of input port of biasing circuit is connected with output port 63, the other end and No.1 n type field effect transistor
Gate terminal 731 is connected, and the source terminal 732 of No.1 n type field effect transistor is connected with one end of No.1 resistor 74, No.1
The other end ground connection of resistor 74, the drain electrode end 733 of No.1 n type field effect transistor and the grid of No.1 n type field effect transistor
Extreme 731 are connected.
Embodiment two：
As shown in figure 4, the input port 72 of output port 71 of the biasing output circuit 7 including biasing circuit, biasing circuit,
No.1 n type field effect transistor 73 and No.1 resistor 74, it is brilliant that No.1 n type field effect transistor 73 includes the field-effect of No.1 N-type
The gate terminal 731 of body pipe, the source terminal 732 of No.1 n type field effect transistor and the drain electrode end of No.1 n type field effect transistor
733,72 one end of input port of biasing circuit is connected with output port 63, the other end and No.1 n type field effect transistor
Gate terminal 731 is connected, and the source terminal 732 of No.1 n type field effect transistor is connected with one end of No.1 resistor 74, No.1
The other end ground connection of resistor 74, the drain electrode end 733 of No.1 n type field effect transistor are connected with No. two DC power supply ports 61
Connect.
The present invention operation principle be：
In reactatron circuit 5, by adjusting the capacitance of input capacitor 56, the second inductor 53 and
The inductance value of one inductor 52, and the magnitude of voltage size of the Outside Dimensions of No. three N-type field-effect tube 51 and bias voltage, to control
The matching degree of the operating current of reactatron, small-signal gain, noise coefficient, the linearity and input impedance；It is logical
The capacitance of adjustment output capacitor 55 and the inductance value of the 3rd inductor 54 are crossed, to control the matching of working frequency points and output impedance
Degree.With enable signal rising or falling periodically or non-periodically, enable signal input port 62 is triggered, output port
Signal caused by 63 also therewith periodically or non-periodically control the operation for biasing output circuit, when output port 63 is defeated
When going out high level, biasing circuit create a further reduction the operating point of microwave amplifier, protect No. two n type field effect transistors
51；When output port 63 exports low level, biasing circuit create a further reduction the leakage current of microwave amplifier, biasing output
Circuit makees a buffering between threshold judgement circuit and microwave amplifier circuit, is conducive to improvement and the noise coefficient of the linearity
Reduction.
Fig. 6 and Fig. 7 is the typical index of the reactatron that biasing circuit is realized in the present invention.Wherein, Fig. 6 is
Noise coefficient test index, Fig. 7 are two tone test indexs.In Fig. 6, with the rise of frequency, noise coefficient also becomes larger therewith,
Within 5GHz, overall noise coefficient is controlled within 1dB.In Fig. 7, the frequency interval of two tone test is 10MHz, and each single-tone is defeated
It is 5dBm to go out power, and third order intermodulation can be controlled in -60dB, and third order intermodulation is symmetrical.Can from performance testing index
Go out, when biasing output circuit using this enabled control, effectively improve the noise coefficient and the linearity of microwave amplifier, together
When make that entirely enabled control biasing output circuit is simple and is easily achieved.
The preferred embodiment of the present invention has shown and described in described above, as previously described, it should be understood that the present invention is not office
Be limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations, modification and
Environment, and can be changed in the scope of the invention is set forth herein by the technology or knowledge of above-mentioned teaching or association area
It is dynamic., then all should be appended by the present invention and changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention
In scope of the claims.
Claims (9)
1. a kind of reactatron circuit, including enabled control input port (1), rf inputs mouth (2), radio frequency are defeated
Exit port (3), No.1 DC power supply port (4), reactatron circuit (5), threshold judgement circuit (6) and biasing are defeated
Go out circuit (7), the threshold judgement circuit (6) include No. two DC power supply ports (61), enable signal input port (62) and
Output port (63), it is characterised in that：The biasing output circuit (7) includes the output port (71) of biasing circuit, biased electrical
Input port (72), No.1 n type field effect transistor (73) and the No.1 resistor (74) on road, the No.1 N-type field-effect are brilliant
Body pipe (73) includes the gate terminal (731) of No.1 n type field effect transistor, the source terminal (732) of No.1 n type field effect transistor
With the drain electrode end (733) of No.1 n type field effect transistor, input port (72) one end of the biasing circuit and output port
(63) it is connected, the other end is connected with the gate terminal (731) of No.1 n type field effect transistor, and the No.1 N-type field-effect is brilliant
The source terminal (732) of body pipe is connected with one end of No.1 resistor (74), the other end ground connection of the No.1 resistor (74).
A kind of 2. reactatron circuit according to claim 1, it is characterised in that：The No.1 N-type field effect
The drain electrode end (733) of transistor is answered to be connected with the gate terminal (731) of No.1 n type field effect transistor.
A kind of 3. reactatron circuit according to claim 1, it is characterised in that：The No.1 N-type field effect
The drain electrode end (733) of transistor is answered to be connected with No. two DC power supply ports (61).
A kind of 4. reactatron circuit according to claim 2 or claim 3, it is characterised in that：It is described
Reactatron circuit (5) includes No. two n type field effect transistors (51), the first inductor (52), the second inductor
(53), the 3rd inductor (54), output capacitor (55), input capacitor (56) and bias resistor (57), No. two N-types
Field-effect transistor (51) includes the leakage of the source terminal (511) of No. two n type field effect transistors, No. two n type field effect transistors
The extremely gate terminal of (512) and No. two n type field effect transistors (513), described input capacitor (56) one end are inputted with radio frequency
Port (2) is connected, and the other end is connected with the first inductor (52), the other end and No. two N of first inductor (52)
The gate terminal (513) of type field-effect transistor is connected, and one end of the bias resistor (57) is simultaneously connected in the first inductor
(52) between input capacitor (56), the other end of the bias resistor (57) and output port (71) phase of biasing circuit
Connection, one end of second inductor (53) are connected with the source terminal (511) of No. two n type field effect transistors, the other end
Ground connection, the 3rd inductor (54) and output capacitor (55) are coupled in parallel to the drain electrode end of No. two n type field effect transistors
(512) on, the other end of the 3rd inductor (54) is connected with No.1 DC power supply port (4), the output capacitor
(55) the other end is connected with radio frequency output port (3).
A kind of 5. reactatron circuit according to claim 4, it is characterised in that：The No.1 N-type field effect
It is junction field effect transistor to answer the physical arrangement type of transistor (73) and No. two n type field effect transistors (51), and metal-
Oxide semiconductor field effect transistor, heterojunction field effect transistor or other field-effect transistors.
A kind of 6. reactatron circuit according to claim 5, it is characterised in that：The No.1 N-type field effect
Answer transistor (73) and the constituent material of No. two n type field effect transistors (51) is silicon, germanium, GaAs, gallium nitride, phosphatization
It is one or more kinds of in indium, group Ⅲ-Ⅴ compound semiconductor or other doped semiconductor materials.
A kind of 7. reactatron circuit according to claim 6, it is characterised in that：The No.1 N-type field effect
Answer the way of realization of transistor (73), No. two n type field effect transistors (51), No.1 resistor (74) and bias resistor (57)
It is separate type device, monolithic integrated optical circuit, the circuit of hydrid integrated circuit or other forms.
A kind of 8. reactatron circuit according to claim 7, it is characterised in that：The output capacitor
(55) and the construction of input capacitor (56) is chip multilayer ceramic capacitor, and metal-insulating layer-metal capacitor or metal-
Oxide-metal capacitance.
A kind of 9. reactatron circuit according to claim 8, it is characterised in that：First inductor
(52), the way of realization of the second inductor (53) and the 3rd inductor (54) is chip-type laminated inductance, chip wire wound inductor, piece
Upper integrated inductor, bond-wire inductor or wafer scale rewiring inductance.
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|---|---|---|---|
| CN201810008257.XA CN107979346A (en) | 2018-01-04 | 2018-01-04 | A kind of reactatron circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810008257.XA CN107979346A (en) | 2018-01-04 | 2018-01-04 | A kind of reactatron circuit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090033440A1 (en) * | 2007-07-30 | 2009-02-05 | Renesas Technology Corp. | Active resonant circuit with resonant-frequency tunability |
| CN101834567A (en) * | 2010-06-03 | 2010-09-15 | 中国人民解放军国防科学技术大学 | Broadband gain adjustable low-noise amplifier |
| CN103166581A (en) * | 2013-01-25 | 2013-06-19 | 嘉兴联星微电子有限公司 | Radio frequency low noise amplifier with high linearity |
| US20160190991A1 (en) * | 2014-12-30 | 2016-06-30 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Low Noise Amplifier |
| US20160380599A1 (en) * | 2015-06-29 | 2016-12-29 | Intel Corporation | Dc bias circuit and the radio frequency receiver circuit using the same |
| CN207819861U (en) * | 2018-01-04 | 2018-09-04 | 翰通飞芯（常州）电子科技有限公司 | A kind of reactatron circuit |
-
2018
- 2018-01-04 CN CN201810008257.XA patent/CN107979346A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090033440A1 (en) * | 2007-07-30 | 2009-02-05 | Renesas Technology Corp. | Active resonant circuit with resonant-frequency tunability |
| CN101834567A (en) * | 2010-06-03 | 2010-09-15 | 中国人民解放军国防科学技术大学 | Broadband gain adjustable low-noise amplifier |
| CN103166581A (en) * | 2013-01-25 | 2013-06-19 | 嘉兴联星微电子有限公司 | Radio frequency low noise amplifier with high linearity |
| US20160190991A1 (en) * | 2014-12-30 | 2016-06-30 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Low Noise Amplifier |
| US20160380599A1 (en) * | 2015-06-29 | 2016-12-29 | Intel Corporation | Dc bias circuit and the radio frequency receiver circuit using the same |
| CN207819861U (en) * | 2018-01-04 | 2018-09-04 | 翰通飞芯（常州）电子科技有限公司 | A kind of reactatron circuit |
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