CN107827077A - A kind of pressure resistance type MEMS temperature sensor and preparation method thereof - Google Patents
A kind of pressure resistance type MEMS temperature sensor and preparation method thereof Download PDFInfo
- Publication number
- CN107827077A CN107827077A CN201710888312.4A CN201710888312A CN107827077A CN 107827077 A CN107827077 A CN 107827077A CN 201710888312 A CN201710888312 A CN 201710888312A CN 107827077 A CN107827077 A CN 107827077A
- Authority
- CN
- China
- Prior art keywords
- temperature sensor
- pressure resistance
- type mems
- mems temperature
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title description 4
- 239000012528 membrane Substances 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910015900 BF3 Inorganic materials 0.000 claims description 9
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000001133 acceleration Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011343 solid material Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 description 22
- 230000035945 sensitivity Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 boron ion Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000004861 thermometry Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0032—Structures for transforming energy not provided for in groups B81B3/0021 - B81B3/0029
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0166—Controlling internal stress of deposited layers by ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a kind of pressure resistance type MEMS temperature sensor for being related to micro electro mechanical system field.The sensor main will use double membrane structure and Wheatstone bridge technology.Using piezoresistive cantilever beam structure, four resistance of Wheatstone bridge are arranged in the same position of four cantilever beams, four resistance are connected into by Wheatstone bridge by lead.The temperature survey that a position is directly carried out in narrow space can be placed on.
Description
Technical field
The present invention relates to a kind of sensor, more particularly to a kind of pressure resistance type MEMS temperature sensor and preparation method thereof.
Background technology
Switch cabinet structure is compact, and space environment is complicated, high voltage, high-temperature, high-intensity magnetic field and extremely strong electromagnetic interference be present
Environment, in general temperature sensor are difficult the temperature for accurately measuring exact position.Existing thermometry is for example red on the market
Outer thermometry, belong to contactless temperature-measuring mode, the principle based on blackbody radiation law, any object higher than absolute zero
All launching radiation energy, object temperature is showed by the size and Wavelength distribution of infrared energy.But infrared measurement of temperature
Fixation need to be installed during instrument thermometric, and influenceed by inside switch cabinet labyrinth to can only obtain the temperature of portion, led to
It is poor with property；Surface acoustic wave wireless temperature sensor is made up of antenna, interdigital transducer, reflecting grating and piezoelectric substrate, its thermometric
Principle is to propagate the surface acoustic wave on piezoelectric substrate surface, and its wavelength and velocity of wave can be with substrate surface or internal factors (temperature)
Change and change.This system installation is simple, but cost is higher, and temperature-measuring range is small, and reliability is low.With micro-nano electronic technology
Development, one kind progressively developed based on the temperature sensor of MEMS (MEMS), and its is low in energy consumption, strong antijamming capability, by
In its volume very little, the position of any required thermometric can be generally placed on, there is high reliability.
The content of the invention
In view of this, it is an object of the invention to provide a kind of pressure resistance type MEMS temperature sensor, solve in the prior art
The problem of existing, you can to realize the temperature monitoring of optional position, it may have higher sensitivity, higher reliability.
The technical solution adopted in the present invention is that a kind of pressure resistance type MEMS temperature sensor, it uses double membrane structure, on
Layer is the larger aluminium film of thermal coefficient of expansion, and lower floor is the semiconductor silicon of SOI device layer, and the surface of silicon carries out ion implanting,
Four diffusion resistances are set on the surface of semiconductor silicon, form Wheatstone bridge.
Preferably, four resistance of Wheatstone bridge are arranged in the same position of four different cantilever beams, lead will
Four resistance connect into Wheatstone bridge.
Preferably, it uses beam type structure.
Preferably, the position of the resistance is substantially at 20 μm of cantilever beam fixing end.
Preferably, the length L of the cantilever beam is 500 μm, and width is 50 μm, and aluminum layer thickness is 1.5 μm, and silicon layer thickness is
8μm。
Preferably, described pressure resistance type MEMS temperature sensor is used for switch cabinet temperature monitor.
The present invention also provides a kind of method for making the pressure resistance type MEMS temperature sensor, and manufacturing process steps are as follows：
(1) ion implanting is carried out on the surface of N-type soi wafer, forms resistance；
(2) ion implanting is carried out with BF (boron fluoride), its process is：Using have passed through the element ion of electric field acceleration with one
Constant speed degree injects solid material surface and forms doping；
(3) contact hole is determined, due to forming resistance on the surface of silicon chip, contact hole is exactly a conducting terminal, to resistance
The Wheatstone bridge power supply or output of formation, its material are to use the aluminium in the membrane structure of upper strata；
(4) oxide layer, sputtered aluminum layer are formed；
(5) front applies PI glue solidification；
(6) reverse side etches, and empties, and discharges cantilever beam.
The pressure resistance type MEMS temperature sensor provided by the invention, low in energy consumption, strong antijamming capability, due to its volume very
It is small, the position of any required thermometric can be generally placed on, there is high sensitivity and reliability using micro mechanical structure.
Brief description of the drawings
By the description to the embodiment of the present invention referring to the drawings, above-mentioned and other purpose of the invention, feature and
Advantage will be apparent from, in the accompanying drawings：
Fig. 1 is the structural representation of silicon microbridge formula MEMS temperature sensor of the present invention；
Fig. 2 is the structural representation of beam type MEMS temperature sensor；
Fig. 3 is the structural representation of Wheatstone bridge；
Fig. 4 is soi wafer structural representation；
Fig. 5 is to make ion implantation technology schematic diagram during temperature sensor.
In figure：1- silicon microbridges；2- cantilever beams；3- ion guns；4- vavuum pumps；5- mass analyzers；6- accelerators；7- is neutral
Beam deviator；8- focusing systems；9- shifted scanning systems；10- silicon chips.
Embodiment
Below based on embodiment, present invention is described, but the present invention is not restricted to these embodiments.
As Figure 1-5, the invention provides a kind of pressure resistance type MEMS temperature sensor, mainly using double membrane structure and
Wheatstone bridge technology, the temperature survey that a position is directly carried out in narrow space can be placed on.
Wherein, the double membrane structure upper strata is the larger aluminium film of thermal coefficient of expansion, and lower floor is SOI (Silicon-
On-Insulator, i.e., the silicon in dielectric substrate) device layer semiconductor silicon, SOI structure is as shown in Figure 4.Principle is：Have
The object that the different materials of the different coefficients of expansion are combined into, when even variation occurs for temperature, because thermal coefficient of expansion is different, thing
The free wxpansion of different materials is by the mutual constraint between various pieces in body, so as to produce temperature stress.Semiconductor silicon selects
Select N-type or p-type.
Further, carry out ion implanting on the surface of the silicon and form diffusion resistance.When the semiconductor silicon of selection is N-type
When, carry out boron ion on the surface of the silicon and inject to form the diffusion resistance；When the semiconductor silicon of selection is p-type, in institute
The surface progress phosphonium ion for stating silicon injects to form the diffusion resistance.N-type soi wafer, the i.e. surface in silicon are selected in the present invention
Carry out BF (boron fluoride) ion implanting and form diffusion resistance.
Further, four diffusion resistances (i.e. R1, R2, R3, R4), connection are set on the surface of the semiconductor silicon
The diffusion resistance forms Wheatstone bridge (such as Fig. 3) in diaphragm.
Preferably, four resistance of the Wheatstone bridge are arranged in the same position of four different cantilever beams, led to
Cross lead and four resistance are connected into Wheatstone bridge, can reduce because the error that the difference of resistance is brought.If same
Four resistance of ion implanting form cantilever beam on individual cantilever beam, and ion can produce larger error in different positions causes resistance
Value is different, complicated when electric bridge returns to zero.
Further, the temperature sensor uses the structure of piezo-resistive silicon microbridge 1 (as shown in Figure 1), it is preferable that the temperature
Degree sensor uses the structure of piezoresistive cantilever beam 2 (as shown in Figure 2).Piezo-resistive silicon micro-bridge structure is former with piezoresistive cantilever beam structure
The same in reason, the difference of both structures is that the former is that one end fixes that one end is free, and the latter is the fixed structure in both ends.Two
The main distinction of kind structure is sensitivity difference, and the high sensitivity of the piezoresistive cantilever beam temperature sensor is in the pressure drag
Formula silicon microbridge temperature sensor.Because the thermal coefficient of expansion of metallic aluminium is probably 10 times or so of silicon, and cantilever beam one end is fixed,
The other end is free end, and when the temperature varies, the deformation of aluminium film is more than the deformation of silicon, and cantilever beam, which bends, causes resistance
Resistance changes, and Wheatstone bridge produces output, and exports directly proportional to temperature.
As shown in Fig. 2 further, the position of the resistance can reach 100MPa stress, it is preferable that such as Fig. 1 institutes
Show, the position of the resistance obtains preferable sensitivity substantially apart from 20 μm of cantilever beam fixing end.It is it is highly preferred that described outstanding
The length L of arm beam is about 500 μm, and width is about 50 μm of (not shown)s, and aluminum layer thickness is about 1.5 μm, and silicon layer is thick
Degree is about 8 μm.The temperature sensor obtained with this has higher sensitivity.
The temperature sensor is had been widely cited in every field, for example temperature is monitored applied in switch cubicle.
Its is low in energy consumption, strong antijamming capability, small volume, can be placed on the position of any required thermometric；The sensor is a kind of micromechanics
Structure, there is higher sensitivity.
Present invention also offers the preparation method of the temperature sensor, manufacturing process steps are as follows：
(1) ion implanting is carried out on the surface of N-type soi wafer, forms resistance.It can be injected when hindering SOI in selection N-type
Boron ion；Need to inject phosphonium ion if hindering SOI in selection p-type, during ion implanting and form resistance.Here to select to hinder in N-type
Exemplified by SOI.
(2) ion implanting is carried out with BF (boron fluoride).Its process is：Using have passed through the element ion of electric field acceleration with one
Constant speed degree injects solid material surface and forms doping.Injection method precision is high, and purity is high.As shown in figure 5, ion implantation apparatus is generally
It is divided into 8 major parts, is respectively：
Ion gun 3：For the container of ionized impurities, conventional impurity source gas has BF3, AsH3 and PH3 etc..
Vavuum pump 4：For improving, producing and maintaining vacuum in closing space.
Mass analyzer 5：Different ions have different charge-to-mass ratios, thus the angle deflected in analyzer magnetic field
Difference, required foreign ion is thus may separate out, and ion beam is very pure.
Accelerator 6：For high-voltage electrostatic field, for ion accelerate (beamacceleration).The acceleration energy is to determine ion implanting depth
One Important Parameters.
Neutral beam deviator 7：Utilize offset electrodes and deviation angle Separation of Neutral atom.
Focusing system 8：For the ion after acceleration to be gathered into a diameter of several millimeters of ion beam.
Shifted scanning system 9：It is scanned for realizing in certain area in ion beam x, y directions.
Silicon chip 10：Ion implanting is carried out to it.
Usually need to carry out thermal anneal process after ion implanting, i.e., annealed in the case where 950 DEG C of high temperature nitrogens are protected 15-30 points
Clock, damage caused by eliminating injection and activation implanting impurity ion.Also can be by allowing ion to reduce damage through thin oxide layer.
(3) contact hole is determined.Due to forming resistance on the surface of silicon chip, contact hole is exactly a conducting terminal, to resistance
The Wheatstone bridge power supply or output of formation, its material are to use the aluminium in the membrane structure of upper strata.
(4) oxide layer is formed, sputters Al.Because silicon and aluminium are all conductive, thus need to add between silicon layer and aluminium lamination
Enter dielectric, thus use silica.Oxide layer is formed, thickness need not be very big；The purpose of sputtered aluminum is to form cantilever beam
Upper strata aluminium film structure in double membrane structure.
(5) front applies PI glue (i.e. polyimides) solidification.The effect for applying PI glue is the part that protection need not be etched.
(6) reverse side etches, and empties, and discharges cantilever beam.The effect of etching is removed using dry method or wet etching technique
The part of removal needed for falling.Reverse side etching is the silicon for first removing SOI bottoms, oxygen buried layer is etched into, then with dry method or wet method
Etching etches away silica in the same direction.Finally discharge cantilever beam.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for those skilled in the art
For, the present invention can have various changes and change.All any modifications made within spirit and principles of the present invention, it is equal
Replace, improve etc., it should be included in the scope of the protection.
Claims (7)
- A kind of 1. pressure resistance type MEMS temperature sensor, it is characterised in that：The pressure resistance type MEMS temperature sensor uses duplicature Structure, upper strata are the larger aluminium film of thermal coefficient of expansion, and lower floor is the semiconductor silicon of SOI device layer, the surface of silicon carry out from Son injection, four diffusion resistances are set on the surface of semiconductor silicon, form Wheatstone bridge.
- 2. pressure resistance type MEMS temperature sensor according to claim 1, it is characterised in that：By four electricity of Wheatstone bridge Resistance is arranged in the same position of four different cantilever beams, and four resistance are connected into Wheatstone bridge by lead.
- 3. pressure resistance type MEMS temperature sensor according to claim 2, it is characterised in that：It uses beam type structure.
- 4. pressure resistance type MEMS temperature sensor according to claim 3, it is characterised in that：The position of the resistance substantially exists At 20 μm of cantilever beam fixing end.
- 5. pressure resistance type MEMS temperature sensor according to claim 4, it is characterised in that：The length L of the cantilever beam is 500 μm, width is 50 μm, and aluminum layer thickness is 1.5 μm, and silicon layer thickness is 8 μm.
- 6. according to pressure resistance type MEMS temperature sensors of the claim 1-5 described in any one, it is characterised in that：Described pressure drag Formula MEMS temperature sensor is used for switch cabinet temperature monitor.
- A kind of 7. method of the pressure resistance type MEMS temperature sensor made described in claim 6, it is characterised in that：Manufacture craft walks It is rapid as follows：(1) ion implanting is carried out on the surface of N-type soi wafer, forms resistance；(2) ion implanting is carried out with BF (boron fluoride), its process is：Using the element ion that have passed through electric field acceleration with a constant speed Degree injects solid material surface and forms doping；(3) contact hole is determined, due to forming resistance on the surface of silicon chip, contact hole is exactly a conducting terminal, and resistance is formed Wheatstone bridge power supply or output, its material be use upper strata membrane structure in aluminium lamination；(4) oxide layer, sputtered aluminum layer are formed；(5) front applies PI (polyimides) adhesive curing；(6) reverse side etches, and empties, and discharges cantilever beam.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2017108605129 | 2017-09-21 | ||
| CN201710860512 | 2017-09-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107827077A true CN107827077A (en) | 2018-03-23 |
| CN107827077B CN107827077B (en) | 2024-06-21 |
Family
ID=61643696
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721249033.5U Active CN207468189U (en) | 2017-09-21 | 2017-09-27 | A kind of pressure resistance type MEMS temperature sensor |
| CN201710888312.4A Active CN107827077B (en) | 2017-09-21 | 2017-09-27 | Piezoresistive MEMS temperature sensor and manufacturing method thereof |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721249033.5U Active CN207468189U (en) | 2017-09-21 | 2017-09-27 | A kind of pressure resistance type MEMS temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN207468189U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109399554A (en) * | 2018-11-27 | 2019-03-01 | 广东电网有限责任公司惠州供电局 | A kind of silicon microbridge pressure resistance type MEMS temperature sensor and preparation method thereof |
| CN110745774A (en) * | 2019-10-16 | 2020-02-04 | 武汉大学 | SiC temperature sensor with cantilever beam structure and manufacturing method thereof |
| CN113371674A (en) * | 2021-05-28 | 2021-09-10 | 杭州电子科技大学温州研究院有限公司 | Wide-range pressure sensor chip and monolithic integration preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207468189U (en) * | 2017-09-21 | 2018-06-08 | 广东电网有限责任公司惠州供电局 | A kind of pressure resistance type MEMS temperature sensor |
| CN109217842A (en) * | 2018-07-26 | 2019-01-15 | 清华大学 | The SAW filter and preparation method thereof of nearly zero-temperature coefficient |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1090427A (en) * | 1992-10-09 | 1994-08-03 | 株式会社半导体能源研究所 | Semiconductor device and manufacture method thereof |
| US5994750A (en) * | 1994-11-07 | 1999-11-30 | Canon Kabushiki Kaisha | Microstructure and method of forming the same |
| JP2002081983A (en) * | 2000-06-23 | 2002-03-22 | Omron Corp | Heat generation device for sensor, sensor, and acceleration sensor |
| US20050054136A1 (en) * | 2003-03-05 | 2005-03-10 | Blanchard Richard A. | Fabrication of diaphragms and "floating" regions of single crystal semiconductor for MEMS devices |
| CN1885047A (en) * | 2006-06-09 | 2006-12-27 | 东南大学 | Piezoresistance type microwave power sensor and microwave power sensing method thereof |
| CN1970434A (en) * | 2006-12-13 | 2007-05-30 | 清华大学 | Method for manufacturing piezoresistance type microcantilever beam sensor on SOI silicon sheet |
| CN101289160A (en) * | 2008-05-20 | 2008-10-22 | 无锡市纳微电子有限公司 | 0-100Pa monolithic silicon based SOI high-temperature low drift micropressure sensor and processing method thereof |
| CN101329361A (en) * | 2008-05-30 | 2008-12-24 | 无锡市纳微电子有限公司 | Minitype silicon accelerometer having functions of measuring pressure intensity and temperature variation and its machining method |
| CN101492150A (en) * | 2009-02-20 | 2009-07-29 | 中国科学院上海微系统与信息技术研究所 | Micro-machine overhang beam simultaneously implementing driving and self-cleaning with single integrated resister |
| US20090261432A1 (en) * | 2008-03-26 | 2009-10-22 | Leslie Bruce Wilner | Interconnection system on a plane adjacent to a solid-state device structure |
| CN101850943A (en) * | 2008-12-26 | 2010-10-06 | 雅马哈株式会社 | Mems sensor and mems sensor manufacture method |
| CN102976263A (en) * | 2012-12-11 | 2013-03-20 | 北京大学 | Method for preparing micro-electromechanical system (MEMS) piezoresistive multi-axis sensor |
| CN103364118A (en) * | 2012-03-29 | 2013-10-23 | 中国科学院电子学研究所 | Piezoresistive pressure sensor and manufacturing method thereof |
| CN104062045A (en) * | 2014-06-13 | 2014-09-24 | 浙江工业大学 | Piezoresistive pressure sensor and manufacturing method thereof |
| CN104280186A (en) * | 2011-11-23 | 2015-01-14 | 无锡芯感智半导体有限公司 | Preparing and compensating method for temperature drift self-compensating SOI pressure sensor |
| CN104931163A (en) * | 2015-06-24 | 2015-09-23 | 无锡芯感智半导体有限公司 | Dual-SOI-structured MEMS pressure sensor chip and manufacturing method thereof |
| CN104986719A (en) * | 2015-05-25 | 2015-10-21 | 东南大学 | Wireless passive MEMS temperature and humidity integrated sensor and manufacturing method for same |
| CN207468189U (en) * | 2017-09-21 | 2018-06-08 | 广东电网有限责任公司惠州供电局 | A kind of pressure resistance type MEMS temperature sensor |
-
2017
- 2017-09-27 CN CN201721249033.5U patent/CN207468189U/en active Active
- 2017-09-27 CN CN201710888312.4A patent/CN107827077B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1090427A (en) * | 1992-10-09 | 1994-08-03 | 株式会社半导体能源研究所 | Semiconductor device and manufacture method thereof |
| US5994750A (en) * | 1994-11-07 | 1999-11-30 | Canon Kabushiki Kaisha | Microstructure and method of forming the same |
| JP2002081983A (en) * | 2000-06-23 | 2002-03-22 | Omron Corp | Heat generation device for sensor, sensor, and acceleration sensor |
| US20050054136A1 (en) * | 2003-03-05 | 2005-03-10 | Blanchard Richard A. | Fabrication of diaphragms and "floating" regions of single crystal semiconductor for MEMS devices |
| CN1885047A (en) * | 2006-06-09 | 2006-12-27 | 东南大学 | Piezoresistance type microwave power sensor and microwave power sensing method thereof |
| CN1970434A (en) * | 2006-12-13 | 2007-05-30 | 清华大学 | Method for manufacturing piezoresistance type microcantilever beam sensor on SOI silicon sheet |
| US20090261432A1 (en) * | 2008-03-26 | 2009-10-22 | Leslie Bruce Wilner | Interconnection system on a plane adjacent to a solid-state device structure |
| CN101289160A (en) * | 2008-05-20 | 2008-10-22 | 无锡市纳微电子有限公司 | 0-100Pa monolithic silicon based SOI high-temperature low drift micropressure sensor and processing method thereof |
| CN101329361A (en) * | 2008-05-30 | 2008-12-24 | 无锡市纳微电子有限公司 | Minitype silicon accelerometer having functions of measuring pressure intensity and temperature variation and its machining method |
| CN101850943A (en) * | 2008-12-26 | 2010-10-06 | 雅马哈株式会社 | Mems sensor and mems sensor manufacture method |
| CN101492150A (en) * | 2009-02-20 | 2009-07-29 | 中国科学院上海微系统与信息技术研究所 | Micro-machine overhang beam simultaneously implementing driving and self-cleaning with single integrated resister |
| CN104280186A (en) * | 2011-11-23 | 2015-01-14 | 无锡芯感智半导体有限公司 | Preparing and compensating method for temperature drift self-compensating SOI pressure sensor |
| CN103364118A (en) * | 2012-03-29 | 2013-10-23 | 中国科学院电子学研究所 | Piezoresistive pressure sensor and manufacturing method thereof |
| CN102976263A (en) * | 2012-12-11 | 2013-03-20 | 北京大学 | Method for preparing micro-electromechanical system (MEMS) piezoresistive multi-axis sensor |
| CN104062045A (en) * | 2014-06-13 | 2014-09-24 | 浙江工业大学 | Piezoresistive pressure sensor and manufacturing method thereof |
| CN104986719A (en) * | 2015-05-25 | 2015-10-21 | 东南大学 | Wireless passive MEMS temperature and humidity integrated sensor and manufacturing method for same |
| CN104931163A (en) * | 2015-06-24 | 2015-09-23 | 无锡芯感智半导体有限公司 | Dual-SOI-structured MEMS pressure sensor chip and manufacturing method thereof |
| CN207468189U (en) * | 2017-09-21 | 2018-06-08 | 广东电网有限责任公司惠州供电局 | A kind of pressure resistance type MEMS temperature sensor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109399554A (en) * | 2018-11-27 | 2019-03-01 | 广东电网有限责任公司惠州供电局 | A kind of silicon microbridge pressure resistance type MEMS temperature sensor and preparation method thereof |
| CN109399554B (en) * | 2018-11-27 | 2024-02-09 | 广东电网有限责任公司惠州供电局 | Silicon microbridge piezoresistance type MEMS temperature sensor and manufacturing method thereof |
| CN110745774A (en) * | 2019-10-16 | 2020-02-04 | 武汉大学 | SiC temperature sensor with cantilever beam structure and manufacturing method thereof |
| CN110745774B (en) * | 2019-10-16 | 2022-12-16 | 武汉大学 | SiC temperature sensor with cantilever beam structure and manufacturing method thereof |
| CN113371674A (en) * | 2021-05-28 | 2021-09-10 | 杭州电子科技大学温州研究院有限公司 | Wide-range pressure sensor chip and monolithic integration preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107827077B (en) | 2024-06-21 |
| CN207468189U (en) | 2018-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207468189U (en) | A kind of pressure resistance type MEMS temperature sensor | |
| CN105784189B (en) | Si-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation | |
| WO2017028466A1 (en) | Mems strain gauge chip and manufacturing process therefor | |
| US6912759B2 (en) | Method of manufacturing a thin piezo resistive pressure sensor | |
| CN104040315B (en) | Fluid pressure sensor and measuring probe | |
| WO2017028465A1 (en) | Mems pressure gauge chip and manufacturing method thereof | |
| CN109485011B (en) | MEMS resonant pressure sensor based on Si-Si-Si-glass wafer bonding technology and manufacturing process | |
| EP2762864B1 (en) | Membrane-based sensor device and method for manufacturing the same | |
| CN206074211U (en) | A kind of low temperature environment charger for the test of MEMS micro-structure dynamic characteristics | |
| JP2012127966A (en) | Method for fabricating sensor | |
| US20110209554A1 (en) | Combined type pressure gauge, and manufacturing method of combined type pressure gauge | |
| CN105776122A (en) | Micro-electromechanical device with multiple airtight cavities and manufacturing method thereof | |
| CN101608962A (en) | A kind of micro Pirani gage | |
| CN111537054B (en) | Pressure and underwater sound integrated sensor and preparation method thereof | |
| CN102620878A (en) | Capacitive micromachining ultrasonic sensor and preparation and application methods thereof | |
| CN105174198A (en) | Acceleration sensor of package structure and preparation method thereof | |
| CN108467007B (en) | A kind of MEMS frictional resistance sensor production method of view-based access control model alignment | |
| CN109342836B (en) | Production process based on piezoelectric piezoresistive broadband high-field-intensity miniature electric field sensor | |
| CN107504927A (en) | A kind of surface acoustic wave high-temp strain sensor chip based on sheet metal and piezoelectric membrane and preparation method thereof | |
| CN102520147B (en) | Capacitive micromachined ultrasonic transducer (CMUT) for detecting trace biochemical substances and preparation method for CMUT | |
| CN105021328A (en) | Piezoresistive pressure sensor compatible with CMOS process and preparation method of piezoresistive pressure sensor | |
| CN103954383B (en) | A kind of bottom dividing plate microsensor that can be used for the measurement of hot environment lower wall surface shear stress and manufacture method thereof | |
| CN102175305A (en) | Single chip integrated trivector vibration sensor | |
| CN111351607B (en) | Manufacturing method of temperature and pressure composite sensor | |
| CN103217228B (en) | Temperature sensor based on capacitive micromachined ultrasonic transducer (CMUT) and preparation and application method of temperature sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |