CN107799510A - A kind of micro- LED chip of full spectrum white-light - Google Patents
A kind of micro- LED chip of full spectrum white-light Download PDFInfo
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- CN107799510A CN107799510A CN201711245452.6A CN201711245452A CN107799510A CN 107799510 A CN107799510 A CN 107799510A CN 201711245452 A CN201711245452 A CN 201711245452A CN 107799510 A CN107799510 A CN 107799510A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 65
- 239000000843 powder Substances 0.000 claims abstract description 47
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000741 silica gel Substances 0.000 claims abstract description 12
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 12
- 238000009434 installation Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a kind of micro- LED chip of full spectrum white-light, it is related to high-quality lighting technical field.The complete micro- LED chip of spectrum white-light includes micro- LED array, sheet phosphor powder layer and chip electrode.Micro- LED array includes substrate and array micro- LED chip on substrate；Sheet phosphor powder layer includes phosphor powder layer and silica gel, and phosphor powder layer is consistent with micro- LED core chip size, and phosphor powder layer is coated in the surface of micro- LED chip, is isolated between two neighboring phosphor powder layer using silica gel；Chip electrode is drawn by micro- LED chip, electric connecting terminal of the chip electrode as micro- LED chip.The complete micro- LED chip light-emitting area of spectrum white-light is small, secondary light-distribution design is simple, colour temperature is controllable and spectrum is adjustable.
Description
Technical field
The present invention relates to high-quality lighting technical field, in particular to a kind of micro- LED chip of full spectrum white-light.
Background technology
Micro- LED technology is the LED array by integrating microsize to high-density on a single die, to realize LED's
Filming, microminiaturization and matrixing, the distance between its pixel can reach micron level, and each pixel can addressing,
It is individually luminous.
At present, LED is widely used in common lighting field, is also used for specific illumination field, as mine lamp, projection lamp,
Stage lighting etc..It is well known that daylight is optimal full spectrum light source, gives comfortable sensation and connect by masses
By.And the light fixture product higher to sunshine degree of fitting rarely has appearance.Using prior art, as blue chip yellow fluorescent powder,
The white light that ultraviolet chip indigo plant red green fluorescent powder or blue red-green glow chip hybrid obtain, has that spectrum is discontinuous, colour rendering is low, light
The shortcomings of poor is imitated, so as to have impact on the development of full spectrum light fixture.
Existing high-quality illumination LED device is mainly mixed by more fluorescent material, more LED lamp beads mix, intelligent dimming control
The modes such as system, illumination comfort level is improved, but these methods have big mixing light source light-emitting area, secondary light-distribution difficult design, adjusted
The problems such as photocontrol complexity.
The content of the invention
The present invention provides a kind of full spectrum white-light micro- LED chip, and its light-emitting area is small, secondary light-distribution design is simple, colour temperature
Controllable and spectrum is adjustable.
The first technical scheme provided by the invention：
A kind of complete micro- LED chip of spectrum white-light includes：
Micro- LED array, micro- LED array include micro- LED chip substrate and array on the substrate；
Sheet phosphor powder layer, the sheet phosphor powder layer include phosphor powder layer and silica gel, the phosphor powder layer with it is described micro-
LED core chip size is consistent, the phosphor powder layer be coated in micro- LED chip surface, the two neighboring phosphor powder layer it
Between using the silica gel isolate；
Chip electrode, the chip electrode are drawn by micro- LED chip, and the chip electrode is as micro- LED core
The electric connecting terminal of piece.
Further, micro- LED chip is installed on the substrate using formal dress or the structure type of upside-down mounting.
Further, micro- LED chip is bar shaped, and multiple micro- LED chip parallel intervals are arranged in the substrate
On.
Further, the width range of micro- LED chip is 50 μm to 300 μm, the length range of micro- LED chip
For 250 μm to 1500 μm, the quantity of micro- LED chip is 5, the spacing range between two neighboring micro- LED chip
For 30 μm to 50 μm.
Further, pad being provided with the substrate, each micro- LED chip is correspondingly arranged a pad,
The chip electrode is arranged on the pad.
Further, micro- LED chip is square that multiple micro- LED chips are arranged in the base in matrix form
On plate.
Further, micro- LED chip is placed with 5 rows 5 and arranged, and the side size range of micro- LED chip is 50 μm to 300
μm, the spacing range between adjacent rows or adjacent two row micro- LED chip is 30 μm to 50 μm.
Further, pad is provided with the substrate, micro- LED chip of often going is correspondingly arranged a pad,
Micro- LED chip described in each column is correspondingly arranged a pad, and the chip electrode is arranged on the pad.
Further, micro- LED chip is GaN purplish blue optical chips, and peak wavelength scope is 410nm to 470nm.
Second of technical scheme provided by the invention：
A kind of complete micro- LED chip of spectrum white-light includes：
Micro- LED array, micro- LED array include micro- LED chip substrate and array on the substrate；
Sheet phosphor powder layer, the sheet phosphor powder layer include phosphor powder layer and silica gel, the phosphor powder layer with it is described micro-
LED core chip size is consistent, the phosphor powder layer be coated in micro- LED chip surface, the two neighboring phosphor powder layer it
Between using the silica gel isolate；
Chip electrode, the chip electrode are drawn by micro- LED chip, and the chip electrode is as micro- LED core
The electric connecting terminal of piece, the chip electrode are arranged on above or below the substrate.
The beneficial effect of the complete micro- LED chip of spectrum white-light provided by the invention is：
(1) micro- LED array surface coating sheet phosphor powder layer, forms illuminated in combination, have size is small, light-emitting area is small,
The advantages that secondary light-distribution design is simple, light quality is high.
(2) different micro- LED chips is lighted by chip electrode, the full spectrum output of different white lights, Jin Ershi can be carried out
Existing adjustable color, the adjustable function of spectrum.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below by embodiment it is required use it is attached
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, therefore be not construed as pair
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other related accompanying drawings.
Fig. 1 is the structural representation for the micro- LED chip of full spectrum white-light that first embodiment of the invention provides.
Fig. 2 is Fig. 1 vertical profile structural representation.
Fig. 3 is a kind of full spectrum white-light output figure for the micro- LED chip of full spectrum white-light that first embodiment of the invention provides.
Fig. 4 is the full spectrum white-light output of another kind for the micro- LED chip of full spectrum white-light that first embodiment of the invention provides
Figure.
Fig. 5 is the structural representation for the micro- LED chip of full spectrum white-light that second embodiment of the invention provides.
Fig. 6 is Fig. 5 vertical profile structural representation.
Fig. 7 is the structural representation for the micro- LED chip of full spectrum white-light that third embodiment of the invention provides.
Fig. 8 is Fig. 7 vertical profile structural representation.
Fig. 9 is the structural representation for the micro- LED chip of full spectrum white-light that fourth embodiment of the invention provides.
Figure 10 is Fig. 9 vertical profile structural representation.
Icon：The micro- LED chip of the full spectrum white-lights of 1-；2- substrates；The micro- LED chips of 3-；4- phosphor powder layers；5- pads；6- cores
Plate electrode.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.The present invention implementation being generally described and illustrated herein in the accompanying drawings
The component of example can be configured to arrange and design with a variety of.
Therefore, below the detailed description of the embodiments of the invention to providing in the accompanying drawings be not intended to limit it is claimed
The scope of the present invention, but be merely representative of the present invention selected embodiment.It is common based on the embodiment in the present invention, this area
The every other embodiment that technical staff is obtained under the premise of creative work is not made, belong to the model that the present invention protects
Enclose.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it further need not be defined and explained in subsequent accompanying drawing in individual accompanying drawing.
In the description of the invention, it is to be understood that term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, or should
Invention product using when the orientation usually put or position relationship, or the orientation or position that those skilled in the art usually understand
Relation is put, it is of the invention necessary with simplified description, rather than the equipment or element of instruction or hint meaning to be for only for ease of description
With specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second ", " the 3rd " etc. are only used for distinguishing description, and it is not intended that instruction or hint
Relative importance.
In the description of the invention, it is also necessary to explanation, unless otherwise clearly defined and limited, term " setting ",
" installation ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or one
Connect body；Can be mechanical connection or electrical connection；Can be joined directly together, can also be indirect by intermediary
It is connected, can is the connection of two element internals.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in the present invention.
First embodiment
Fig. 1 and Fig. 2 are referred to, present embodiments provides a kind of micro- LED chip 31 of full spectrum white-light, full spectrum white-light is micro-
LED chip 31 includes micro- LED array, sheet phosphor powder layer and chip electrode 6.
Micro- LED chip 3 is installed on a substrate 2 using the structure type of formal dress.Micro- LED array includes substrate 2 and array
Micro- LED chip 3 on a substrate 2.Micro- LED chip 3 is GaN purplish blue optical chips, and peak wavelength scope is 410nm to 470nm.It is micro-
LED chip 3 is bar shaped, and the multiple micro- parallel interval of LED chip 3 arrangements are on a substrate 2.
In the present embodiment, the quantity of micro- LED chip 3 is 5,5 micro- LED chips 3 number consecutively from left to right in Fig. 1
For (1), (2), (3), (4) and (5).The width range of micro- LED chip 3 is 50 μm to 300 μm, the length model of micro- LED chip 3
Enclose for 250 μm to 1500 μm, the spacing range between two neighboring micro- LED chip 3 is 30 μm to 50 μm.
Sheet phosphor powder layer includes phosphor powder layer 4 and silica gel, and phosphor powder layer 4 is consistent with micro- size of LED chip 3, fluorescent material
Layer 4 is coated in the surface of micro- LED chip 3, is isolated between two neighboring phosphor powder layer 4 using silica gel.The surface of micro- LED chip 3
Phosphor powder layer 4 is coated, illuminated in combination can be formed, with size is small, light-emitting area is small, secondary light-distribution design is simple, light quality
The advantages that high.
Phosphor powder layer 4 includes the fluorescent material of different emission.The fluorescent material of different emission includes yellow fluorescent powder
YAG:Ce, orange fluorescent powder (Sr, Ba) 3SiO5:Eu, yellowish green fluorescent powder (Y, Lu) 3Al5O12:Ce or red fluorescence powder
Sr2Si5N8:One or several kinds of combinations in Eu.
Chip electrode 6 is arranged on the top of substrate 2.Chip electrode 6 is drawn by micro- LED chip 3, and chip electrode 6 is as micro-
The electric connecting terminal of LED chip 3, so as to form independently addressable micro- LED array, it can be grouped by chip electrode 6 or single
The light on and off of the individual micro- LED chip 3 of control.Pad 5 is provided with substrate 2, each micro- LED chip 3 is correspondingly arranged a pad 5,
Chip electrode 6 is arranged on pad 5.
If lighting numbering (1), (3), micro- LED chip 3 of (5), the full spectrum of the complete micro- output of LED chip 31 of spectrum white-light
White light is as shown in Figure 3.If lighting numbering (2), (3), micro- LED chip 3 of (5), what the complete micro- LED chip 31 of spectrum white-light exported
Full spectrum white-light is as shown in Figure 4.Fig. 3 and Fig. 4 illustrates different full spectrum white-light output.That is, will numbering (1),
(2), (3), micro- LED chip 3 of (5) in different combinations light by mode, alternative excites corresponding fluorescent material, realizes not
Same full spectrum white-light output, and then realize the adjustable function of adjustable color, spectrum.
The beneficial effect of the micro- LED chip 31 of full spectrum white-light that the present embodiment provides is：
(1) traditional LED characteristic has been adopted as heir, there is low-power consumption, high brightness, ultrahigh resolution and color saturation, reaction
Speed is fast, super power saving, lasts a long time, the advantages that efficiency is higher, moreover, its power consumption is about the 10% of LCD, OLED
50%.
(2) micro- LED array surface coating sheet phosphor powder layer, forms illuminated in combination, have size is small, light-emitting area is small,
The advantages that secondary light-distribution design is simple, light quality is high.
(3) different micro- LED chips 3 is lighted by chip electrode 6, the full spectrum output of different white lights can be carried out, and then
Realize the adjustable function of adjustable color, spectrum.
Second embodiment
Fig. 5 and Fig. 6 are referred to, present embodiments provides a kind of complete micro- LED chip 31 of spectrum white-light, itself and first embodiment
The micro- structure of LED chip 31 of full spectrum white-light provided is close, and difference is, micro- LED chip 3 in the present embodiment is side
Shape.
Micro- LED chip 3 is installed on a substrate 2 using the structure type of formal dress.The wave band of micro- LED chip 3 be 445nm extremely
465nm.Multiple micro- LED chips 3 are arranged on a substrate 2 in matrix form.In the present embodiment, micro- LED chip 3 is placed with 5 rows 5
Row, 25 micro- LED chips 3 can according to modern times writing direction (from left to right, from top to bottom) be numbered (1),
(2)、····、(24)、(25).Will numbering (1), (2), (24), micro- LED chip 3 of (25) is according to different
Combination is lighted, and alternative excites corresponding fluorescent material, realizes different full spectrum white-light output, and then realize that colour temperature can
Adjust, the adjustable function of spectrum.
The side size range of micro- LED chip 3 is 50 μm to 300 μm, between adjacent rows or the micro- LED chip 3 of adjacent two row
Spacing range is 30 μm to 50 μm.
The top of substrate 2 is provided with pad 5, and chip electrode 6 is arranged on pad 5.Micro- LED chip 3 of often going is correspondingly arranged
One micro- LED chip 3 of the row of pad 5,5 is correspondingly arranged 5 pads, 5,5 pads 5 and forms a group.The micro- correspondence of LED chip 3 of each column
Set a micro- LED chip 3 of the row of pad 5,5 to be correspondingly arranged 5 pads, 5,5 pads 5 and form another group.In two groups of pads 5
Chip electrode 6 then each act as anode connection terminal and the negative pole connection end of micro- LED chip 3, it is independently addressable so as to be formed
Micro- LED array.
In the other structures and technique effect and first embodiment of the micro- LED chip 31 of full spectrum white-light that the present embodiment provides
It is corresponding identical, repeat no more here.
3rd embodiment
Fig. 7 and Fig. 8 are referred to, present embodiments provides a kind of complete micro- LED chip 31 of spectrum white-light, itself and first embodiment
The micro- structure of LED chip 31 of full spectrum white-light provided is close, and difference is, micro- LED chip 3 in the present embodiment uses
The structure type installation of dress is on a substrate 2.
Micro- upside-down mounting of LED chip 3 is correspondingly arranged on pad 5, pad 5 on a substrate 2, in the lower section of each micro- LED chip 3
In be provided with chip electrode 6, so, chip electrode 6 is arranged on the lower section of substrate 2.By chip electrode 6, will numbering (1),
(2), (3), micro- LED chip 3 of (5) in different combinations light by mode, alternative excites corresponding fluorescent material, realizes not
Same full spectrum white-light output, and then realize the adjustable function of adjustable color, spectrum.
In the other structures and technique effect and first embodiment of the micro- LED chip 31 of full spectrum white-light that the present embodiment provides
It is corresponding identical, repeat no more here.
Fourth embodiment
Fig. 9 and Figure 10 are referred to, present embodiments provides a kind of micro- LED chip 31 of full spectrum white-light, it is implemented with second
The micro- structure of LED chip 31 of full spectrum white-light that example provides is close, and difference is, micro- LED chip 3 in the present embodiment uses
The structure type installation of upside-down mounting is on a substrate 2.
Micro- upside-down mounting of LED chip 3 is correspondingly arranged on pad 5, pad 5 on a substrate 2, in the lower section of each micro- LED chip 3
In be provided with chip electrode 6, so, chip electrode 6 is arranged on the lower section of substrate 2.By chip electrode 6, will numbering (1),
(2), (24), micro- LED chip 3 of (25) in different combinations light by mode, alternative excite corresponding to it is glimmering
Light powder, different full spectrum white-light output is realized, and then realize the adjustable function of adjustable color, spectrum.
In the other structures and technique effect and second embodiment of the micro- LED chip 31 of full spectrum white-light that the present embodiment provides
It is corresponding identical, repeat no more here.
The preferred embodiments of the present invention are these are only, are not intended to limit the invention, for those skilled in the art
For member, the present invention can have various modifications and variations.Any modification within the spirit and principles of the invention, being made,
Equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (10)
1. the micro- LED chip of a kind of full spectrum white-light, it is characterised in that the complete micro- LED chip of spectrum white-light includes：
Micro- LED array, micro- LED array include micro- LED chip substrate and array on the substrate；
Sheet phosphor powder layer, the sheet phosphor powder layer include phosphor powder layer and silica gel, the phosphor powder layer and micro- LED core
Chip size is consistent, and the phosphor powder layer is coated in the surface of micro- LED chip, is used between the two neighboring phosphor powder layer
The silica gel isolation；
Chip electrode, the chip electrode are drawn by micro- LED chip, and the chip electrode is as micro- LED chip
Electric connecting terminal.
2. the micro- LED chip of full spectrum white-light according to claim 1, it is characterised in that micro- LED chip uses formal dress
Or the structure type installation of upside-down mounting is on the substrate.
3. the micro- LED chip of full spectrum white-light according to claim 2, it is characterised in that micro- LED chip is bar shaped,
Multiple micro- LED chip parallel interval arrangements are on the substrate.
4. the micro- LED chip of full spectrum white-light according to claim 3, it is characterised in that the width model of micro- LED chip
Enclose for 50 μm to 300 μm, the length range of micro- LED chip is 250 μm to 1500 μm, and the quantity of micro- LED chip is 5
Individual, the spacing range between two neighboring micro- LED chip is 30 μm to 50 μm.
5. the micro- LED chip of full spectrum white-light according to claim 4, it is characterised in that pad is provided with the substrate,
Each micro- LED chip is correspondingly arranged a pad, and the chip electrode is arranged on the pad.
6. the complete micro- LED chip of spectrum white-light according to claim 2, it is characterised in that micro- LED chip be it is square,
Multiple micro- LED chips are arranged on the substrate in matrix form.
7. the micro- LED chip of full spectrum white-light according to claim 6, it is characterised in that micro- LED chip is placed with 5
Row 5 arranges, and the side size range of micro- LED chip is 50 μm to 300 μm, adjacent rows or adjacent two row micro- LED chip it
Between spacing range be 30 μm to 50 μm.
8. the micro- LED chip of full spectrum white-light according to claim 7, it is characterised in that pad is provided with the substrate,
Micro- LED chip of often going is correspondingly arranged a pad, and micro- LED chip described in each column is correspondingly arranged a pad,
The chip electrode is arranged on the pad.
9. the micro- LED chip of full spectrum white-light according to any one of claim 1 to 8, it is characterised in that micro- LED core
Piece is GaN purplish blue optical chips, and peak wavelength scope is 410nm to 470nm.
10. the micro- LED chip of a kind of full spectrum white-light, it is characterised in that the complete micro- LED chip of spectrum white-light includes：
Micro- LED array, micro- LED array include micro- LED chip substrate and array on the substrate；
Sheet phosphor powder layer, the sheet phosphor powder layer include phosphor powder layer and silica gel, the phosphor powder layer and micro- LED core
Chip size is consistent, and the phosphor powder layer is coated in the surface of micro- LED chip, is used between the two neighboring phosphor powder layer
The silica gel isolation；
Chip electrode, the chip electrode are drawn by micro- LED chip, and the chip electrode is as micro- LED chip
Electric connecting terminal, the chip electrode are arranged on above or below the substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711245452.6A CN107799510A (en) | 2017-12-01 | 2017-12-01 | A kind of micro- LED chip of full spectrum white-light |
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| CN201711245452.6A CN107799510A (en) | 2017-12-01 | 2017-12-01 | A kind of micro- LED chip of full spectrum white-light |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108732818A (en) * | 2018-05-29 | 2018-11-02 | 武汉华星光电技术有限公司 | The production method of backlight module, display device and backlight module |
| CN109860164A (en) * | 2019-02-26 | 2019-06-07 | 深圳市穗晶光电股份有限公司 | A kind of automobile-used LED light source and its packaging technology based on the encapsulation of ceramic fluorescent piece |
| CN110211951A (en) * | 2019-07-11 | 2019-09-06 | 上海应用技术大学 | A kind of white LED lamp structure of the multistage adjustable color based on full spectrum |
| US10726772B2 (en) | 2018-05-29 | 2020-07-28 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display device, backlight module and manufacturing method thereof |
| CN111668198A (en) * | 2019-03-07 | 2020-09-15 | 杭州汉徽光电科技有限公司 | Forward-mounted high-voltage LED chip set, LED light source for plant light supplement and illumination equipment |
| US12051677B2 (en) | 2019-03-07 | 2024-07-30 | Hangzhou Hanhui Optoelectronic Technology Co., Ltd. | High voltage LED chip set, LED light source for plant light supplementation and illuminating device |
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Application publication date: 20180313 |