CN107738396B - Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process - Google Patents
Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process Download PDFInfo
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- CN107738396B CN107738396B CN201710778049.3A CN201710778049A CN107738396B CN 107738396 B CN107738396 B CN 107738396B CN 201710778049 A CN201710778049 A CN 201710778049A CN 107738396 B CN107738396 B CN 107738396B
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- Prior art keywords
- thermoelectric semiconductor
- filling
- semiconductor
- modified polyurethane
- lower die
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 229920002635 polyurethane Polymers 0.000 title claims abstract description 20
- 239000004814 polyurethane Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000006260 foam Substances 0.000 title description 10
- 238000005187 foaming Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000919 ceramic Substances 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 claims description 7
- 230000005619 thermoelectricity Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 2
- 238000012216 screening Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 abstract description 7
- 229920005830 Polyurethane Foam Polymers 0.000 abstract description 6
- 239000011496 polyurethane foam Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 238000005057 refrigeration Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical class CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 2
- 239000004156 Azodicarbonamide Substances 0.000 description 2
- GNDMWRNTJIARLO-UHFFFAOYSA-N ClC(C)Cl.[F] Chemical class ClC(C)Cl.[F] GNDMWRNTJIARLO-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- XOZUGNYVDXMRKW-AATRIKPKSA-N azodicarbonamide Chemical compound NC(=O)\N=N\C(N)=O XOZUGNYVDXMRKW-AATRIKPKSA-N 0.000 description 2
- 235000019399 azodicarbonamide Nutrition 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- -1 decyl tertiary amine Chemical class 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920005906 polyester polyol Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C44/00—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles
- B29C44/02—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles for articles of definite length, i.e. discrete articles
- B29C44/12—Incorporating or moulding on preformed parts, e.g. inserts or reinforcements
Landscapes
- Polyurethanes Or Polyureas (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Refrigerator Housings (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
The present invention discloses a kind of thermoelectric semiconductor filling mold, filling mold includes upper die and lower die, left and right sides positioning plate, the lower die setting positioning groove and filling rifle insertion hole also serve as sealing threaded hole, 45 ° of the thermoelectric semiconductor is placed on lower die positioning groove, upper mold setting gas vent is taken over self-styled technique is vacuumized, and modified polyurethane foamed material is filled into die cavity through filling rifle insertion hole.The present invention " double ladder slot bridge-type water conservancy diversion quickly fill chamber " is by water conservancy diversion, pushing, negative pressure filling technology,, dielectric strength very high polyurethane foam material low using thermal conductivity ratio air is filled to foaming in the microchannel of thermoelectric semiconductor, so that the performance of thermoelectric semiconductor be made to increase substantially.
Description
Technical field:
The present invention relates to thermoelectric semiconductor performance improvement technical fields, are to be related to one kind for thermoelectricity half more specifically
The modified polyurethane of conductor filling and thermoelectric semiconductor the filling mold, foam process for using the modified polyurethane.
Background technique:
With the rapid development of economy, the electric appliances such as refrigerator are more more and more universal, the consumption of energy consumption is also more and more, and China is one
How a energy consumption big country reduces energy consumption, realizes sustainable development, and get along with the friendly harmonious of environment, becomes
One of the hot issue of many scholar's researchs of today's society.Semiconductor refrigerating is winged at this as a kind of novel refrigeration modes
Speed development is one in the society that people's living standard increasingly improves and requirement of the people for life comfort level is higher and higher
A refrigeration modes with good development prospect.
Semiconductor refrigerating is electric current transducing type refrigeration modes, also known as thermoelectric cooling, can be freezed, and can be heated, by right
Input current controls the high-precision control, it can be achieved that temperature, and process of refrigerastion does not need any refrigerant, without rotating part
Part, it is noiseless, it is without friction.The key that semiconductor refrigerating is realized is semiconductor chilling plate.Current semiconductor chilling plate is to utilize
Extraordinary semiconductor material constitutes P-N junction, and the gap that N-type semiconductor and P semiconductor arrange is air, will lead to so 1. empty
Gas convection phenomena causes cold and hot end short-circuit, seriously affects refrigeration performance；2. wet air causes dielectric strength to decline, climb
Electrical distance is unqualified；3. the aging of accelerated semiconductor.
It includes semiconductor chilling plate that Chinese patent CN201420306709.X, which discloses a kind of semiconductor cooling device, by
Upper substrate and lower substrate, and multiple groups P-N junction semiconductor group between upper substrate and lower substrate is at the upper substrate is under
The gap of substrate is filled with the aerogel layer with partiting thermal insulation effect, and the refrigerating efficiency under power consumption is made to improve 10% or more.
But according to general common sense, earth silicon material is filled, heat-insulating property can all decline, and weaken the refrigeration of cooling piece instead
Performance.
Summary of the invention:
The technical problems to be solved by the present invention are: provide it is a kind of for thermoelectric semiconductor filling modified polyurethane and make
Fill mold, foam process with the thermoelectric semiconductor of the modified polyurethane, to improve the refrigeration performance of thermoelectric semiconductor, with gram
Take the deficiencies in the prior art.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of thermoelectric semiconductor fills mold, the thermoelectricity
Semiconductor includes ceramic wafer, P-type semiconductor, N-type semiconductor, flow deflector, and the p-type and N-type semiconductor are arranged between two ceramic wafers
Column, it is characterised in that: filling mold includes upper die and lower die, left and right sides positioning plate, and the lower die setting positions groove and filling rifle
It is inserted into hole, 45 ° of the thermoelectric semiconductor is placed on lower die positioning groove, and upper mold, which is arranged gas vent and vacuumizes self-styled technique, to be connect
Pipe, through filling rifle insertion hole modified polyurethane foamed material is filled into die cavity, make thermoelectric semiconductor in two ceramic wafers between
Modified polyurethane foamed material is filled in gap.
The upper and lower mould setting positioning agrees with, and forms double terraced slot bridge-type water conservancy diversion and quickly fill chamber.
Dovetail groove is set in the upper and lower mould, gasket is set between thermoelectric semiconductor and positioning groove.
Several thermoelectric semiconductors are arranged in die cavity internal frame idle discharge, screening glass, the heat of two sides are set between adjacent thermoelectric semiconductor
Neonychium is set between electric semiconductor and side positioning plate.
A kind of modified polyurethane for thermoelectric semiconductor filling, it is characterised in that: its formula composition score by weight is such as
Under: polyether polyol 20, azodicarbonamide 1, polyester polyol 40, foam stabiliser 4, a fluorine dichloroethanes 20, diphenyl
Methane diisocyanate 200, pungent/decyl tertiary amine 2, three n-hexylamines 1；The modified polyurethane is used for thermoelectric semiconductor internal pore
Filling, and the modified polyurethane uses on any thermoelectric semiconductor filling mold of Claims 1-4.
The foam process of the above-mentioned modified polyurethane for thermoelectric semiconductor filling, it is characterised in that: to thermoelectricity before filling
The die cavity that semiconductor fills mold carries out vacuum pumping, makes to keep preset negative pressure inside entire type chamber, enables to polyurethane and sending out
Infusion forms cavity of resorption push-in sunset before foaming, microchannel squeezes out, the force field of epicoele traction, to complete foaming process.
The filling aperture has both sealing function, is sealed after the completion of filling by stud, and the technique adapter tube is self-sealing machine
Structure guarantees to form preset positive pressure and temperature after the completion of foaming, completes foaming chemical reaction and reach required optimum density and minimum
Thermal conductivity.
The beneficial effects of the present invention are: the present invention fills technology by water conservancy diversion, pushing, negative pressure, uses thermal conductivity ratio
Air is low, the very high polyurethane foam material of dielectric strength is filled to foaming in the microchannel of thermoelectric semiconductor, foaming
Forming process switchs to positive seal and temperature control, so that the performance of thermoelectric semiconductor is increased substantially, refrigerator after vanning
Power consumption reduces, cabinet mean temperature significantly reduces, and reliability increases substantially.
Due to using modified formula, so that polyurethane foams is had low viscosity and high fluidity, ensure that filling
Validity.
At home and abroad thermoelectric semiconductor field belongs to pioneering technology to the present invention.
Detailed description of the invention:
Fig. 1 is thermoelectric semiconductor filling mold structure diagram of the invention.
Fig. 2 is the side view of Fig. 1.
Fig. 3 is thermoelectric semiconductor filling mold foam chamber topology layout figure of the invention.
Specific embodiment:
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " front and back ", "upper", "lower", "left", "right", " vertical ",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should broadly understood, for example, it may be being fixedly connected.It may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
The concrete meaning of invention.
Fig. 1-3 is please referred to, thermoelectric semiconductor filling mold is divided into upper mold 1 and lower die 2, and the thermoelectric semiconductor 7 includes pottery
Porcelain plate, P-type semiconductor, N-type semiconductor, flow deflector, the p-type and N-type semiconductor arrange between two ceramic wafers, fill mold packet
Upper mold 1, lower die 2, left and right sides positioning plate 5 are included, the lower die setting positioning groove 4 and filling rifle are inserted into hole 3, and the thermoelectricity is partly led
45 ° of body are placed on lower die positioning groove, and gas vent and evacuation process adapter tube is arranged in upper mold, are inserted into hole to die cavity through filling rifle
Interior filling modified polyurethane foamed material.Upper and lower mould is terraced slot open type design, and processing technology is simple, easily reaches design requirement,
Processing cost is low, processing approach multiplicity, can be machining with punching press or machine.Molding is waist-drum-shaped up and down, molds and divides mould simple
It is single reliable, it can be with self-correcting positive alignment.Upper mold design has gas vent and evacuation process adapter tube, and wherein evacuation process takes over one end
With die body welding, the other end and maintenance needle-valve welding, conveniently it is controlled to a vacuum pump.Lower die is equipped with filling rifle and is inserted into hole, simultaneously should
Being inserted into hole is sealing screw hole, can be sealed with sealing bolt after the completion of filling.
45 ° of thermoelectric semiconductor prepared are placed on lower die positioning groove, is used between thermoelectric semiconductor and groove
Rubber seal (rubber pad is Nian Jie one with groove), forms lower bridge arm.Thermoelectric module is aerial to be deposited in lower die dovetail groove
It is interior, M type chamber is formed, has gummed paper 8 to protect ceramic surface for seal box between cooling piece and piece, the thermoelectric module at both ends is with before
It is stamped the sealing of rubber 9 in rear end (rubber seal and front and rear cover are bonded as one).Lower bridge wall forms close with lower die and front and rear cover
The M type of envelope injects chamber, and filling agent is forced through the microchannel by thermoelectric module.
After upper mold and lower die molding, bridge arm in formation, and complete water conservancy diversion bridge is constituted with lower bridge wall.Upper impression is W water conservancy diversion
Chamber, the groove with upper mold are also sealing, and filling agent is flowed out by upper bridge arm.
Vacuum pumping is carried out before filling, forms negative pressure inside entire type chamber, is enabled to polyurethane foams before foaming
Cavity of resorption push-in, the force field that microchannel squeezes out, epicoele is drawn are formed sunset, to complete foaming process.
As shown in table 1, become low viscosity height stream in addition modified material for main polyurethane foams composition and ratio
The modified polyurethane foaming agent of dynamic property, expansion density improves, adhesive strength improves, and thermal coefficient is reduced to the 1/2 of air, absolutely
Edge intensity reaches factory regulation.Processing conditions: formula is mixed by mass fraction, at 25 degrees c, stirs 10 seconds, injects mold
It is interior, it foams 10 minutes at 25 degrees c, obtains performance are as follows: foam density 0.034g/cm3, thermal conductivity 0.015W/ (mK), bonding
Intensity 400MPa.
1 low-viscosity high-fluidity polyurethane foams of table, viscosity (25 DEG C): 50CPS
| Serial number | Formula | Weight fraction | |
| 1 | Polyether polyol 3055 | 20 | |
| 2 | Azodicarbonamide | 1.0 | |
| 3 | Polyester polyol HK-3152 | 40 | |
| 4 | Foam stabiliser B8736LF2 | 4 | |
| 5 | One fluorine dichloroethanes | 20 | |
| 6 | Methyl diphenylene diisocyanate | 200 | |
| 7 | Pungent/decyl |
2 | |
| 8 | Three n- |
1 |
The invention is not limited to above embodiment, if not departing from the present invention to various changes or deformation of the invention
Spirit and scope, if these changes and deformation belong within the scope of claim and equivalent technologies of the invention, then this hair
It is bright to be also intended to encompass these changes and deformation.
Claims (4)
1. a kind of thermoelectric semiconductor fills mold, the thermoelectric semiconductor includes ceramic wafer, P-type semiconductor, N-type semiconductor, leads
Flow, the p-type and N-type semiconductor arrange between two ceramic wafers, it is characterised in that: filling mold includes upper die and lower die, left and right
Side positioning plate, the lower die setting positioning groove and filling rifle are inserted into hole, and the seamed edge relative level line of the thermoelectric semiconductor is in
45 ° are placed on lower die positioning groove, and upper mold setting gas vent is taken over self-styled technique is vacuumized, and are inserted into Kong Xiangmo through filling rifle
Intracavitary filling modified polyurethane foamed material makes thermoelectric semiconductor fill modified polyurethane foaming in the gap in two ceramic wafers
Material.
2. thermoelectric semiconductor fills mold according to claim 1, it is characterised in that: the upper and lower mould setting positioning agrees with,
And it forms double terraced slot bridge-type water conservancy diversion and quickly fills chamber.
3. thermoelectric semiconductor fills mold according to claim 2, it is characterised in that: dovetail groove is set in the upper and lower mould,
Gasket is set between thermoelectric semiconductor and positioning groove.
4. thermoelectric semiconductor fills mold according to claim 3, it is characterised in that: arrange several thermoelectricity in die cavity internal frame idle discharge
Semiconductor is arranged screening glass between adjacent thermoelectric semiconductor, neonychium is arranged between the thermoelectric semiconductor and side positioning plate of two sides.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910860652.5A CN110435067B (en) | 2017-09-01 | 2017-09-01 | Thermoelectric semiconductor foamed by adopting mold |
| CN201910844927.6A CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
| CN201710778049.3A CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710778049.3A CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910844927.6A Division CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
| CN201910860652.5A Division CN110435067B (en) | 2017-09-01 | 2017-09-01 | Thermoelectric semiconductor foamed by adopting mold |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107738396A CN107738396A (en) | 2018-02-27 |
| CN107738396B true CN107738396B (en) | 2019-10-15 |
Family
ID=61235688
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910844927.6A Expired - Fee Related CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
| CN201910860652.5A Expired - Fee Related CN110435067B (en) | 2017-09-01 | 2017-09-01 | Thermoelectric semiconductor foamed by adopting mold |
| CN201710778049.3A Expired - Fee Related CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910844927.6A Expired - Fee Related CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
| CN201910860652.5A Expired - Fee Related CN110435067B (en) | 2017-09-01 | 2017-09-01 | Thermoelectric semiconductor foamed by adopting mold |
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| Country | Link |
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| CN (3) | CN110421773B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108359070A (en) * | 2018-03-01 | 2018-08-03 | 顺德职业技术学院 | A kind of modified polyurethane foam process for thermoelectric semiconductor filling |
| WO2021007848A1 (en) * | 2019-07-18 | 2021-01-21 | 浙江大学 | Foamed microchannel film with foam pores interconnected with microchannels, and preparation method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102734978A (en) * | 2011-03-29 | 2012-10-17 | 株式会社丰田自动织机 | Thermoelectric conversion unit and method of manufacturing |
| CN104540865A (en) * | 2012-08-20 | 2015-04-22 | 拜耳材料科技股份有限公司 | Polyurethane casting resins and potting compounds produced therefrom |
| WO2017074003A1 (en) * | 2015-10-27 | 2017-05-04 | 한국과학기술원 | Flexible thermoelectric device and method for preparing same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56127427A (en) * | 1980-03-11 | 1981-10-06 | Hitachi Chem Co Ltd | Manufacture of fiber-reinforced thermosetting resin molding |
| US20020009584A1 (en) * | 2000-06-14 | 2002-01-24 | Boyer Thomas D. | Encapsulation using microcellular foamed materials |
| JP2003008087A (en) * | 2001-04-18 | 2003-01-10 | Suzuki Sogyo Co Ltd | Thermoelectric element module and its manufacturing method |
| JP2003258323A (en) * | 2002-03-07 | 2003-09-12 | Citizen Watch Co Ltd | Thermoelectric device |
| WO2005114649A2 (en) * | 2004-05-19 | 2005-12-01 | Bed-Check Corporation | Silk-screen thermocouple |
| CN1750287A (en) * | 2004-09-14 | 2006-03-22 | 杜效中 | Method and device for producing thermoelectric semiconductor device and its products obtained thereof |
| CN100463129C (en) * | 2006-02-09 | 2009-02-18 | 夏普株式会社 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| JP4266228B2 (en) * | 2006-03-24 | 2009-05-20 | 株式会社東芝 | Thermoelectric conversion module and manufacturing method thereof |
| CN104004344B (en) * | 2014-06-09 | 2016-05-18 | 天津信赛科贸有限公司 | A kind of preparation method of waterproof Embedding Material |
| CN105269758B (en) * | 2014-07-15 | 2018-01-02 | 清华大学 | Semiconductor packaging mold, encapsulating structure and method for packing |
| CN104385534B (en) * | 2014-11-18 | 2017-06-16 | 佛山市蓝箭电子股份有限公司 | A kind of plastic-sealing mould structure |
-
2017
- 2017-09-01 CN CN201910844927.6A patent/CN110421773B/en not_active Expired - Fee Related
- 2017-09-01 CN CN201910860652.5A patent/CN110435067B/en not_active Expired - Fee Related
- 2017-09-01 CN CN201710778049.3A patent/CN107738396B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102734978A (en) * | 2011-03-29 | 2012-10-17 | 株式会社丰田自动织机 | Thermoelectric conversion unit and method of manufacturing |
| CN104540865A (en) * | 2012-08-20 | 2015-04-22 | 拜耳材料科技股份有限公司 | Polyurethane casting resins and potting compounds produced therefrom |
| WO2017074003A1 (en) * | 2015-10-27 | 2017-05-04 | 한국과학기술원 | Flexible thermoelectric device and method for preparing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110421773B (en) | 2021-04-23 |
| CN110421773A (en) | 2019-11-08 |
| CN107738396A (en) | 2018-02-27 |
| CN110435067B (en) | 2021-04-13 |
| CN110435067A (en) | 2019-11-12 |
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