CN107643849A - The manufacture method of contact panel - Google Patents
The manufacture method of contact panel Download PDFInfo
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- CN107643849A CN107643849A CN201710928433.7A CN201710928433A CN107643849A CN 107643849 A CN107643849 A CN 107643849A CN 201710928433 A CN201710928433 A CN 201710928433A CN 107643849 A CN107643849 A CN 107643849A
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- China
- Prior art keywords
- manufacture method
- contact panel
- conductive layer
- nano metal
- wire
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000059 patterning Methods 0.000 claims abstract description 20
- 238000007747 plating Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 239000003792 electrolyte Substances 0.000 claims description 16
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000002923 metal particle Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 3
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 3
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 3
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005642 Oleic acid Substances 0.000 claims description 3
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 3
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 101100242814 Caenorhabditis elegans parg-1 gene Proteins 0.000 description 1
- 229910004044 HAuCl4.3H2O Inorganic materials 0.000 description 1
- SJUCACGNNJFHLB-UHFFFAOYSA-N O=C1N[ClH](=O)NC2=C1NC(=O)N2 Chemical compound O=C1N[ClH](=O)NC2=C1NC(=O)N2 SJUCACGNNJFHLB-UHFFFAOYSA-N 0.000 description 1
- -1 Polyethylene terephthalate Polymers 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- 230000031709 bromination Effects 0.000 description 1
- 238000005893 bromination reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 1
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- Position Input By Displaying (AREA)
- Non-Insulated Conductors (AREA)
Abstract
A kind of manufacture method of contact panel, comprising：(i) substrate is provided；(ii) patterned transparent conductive layer is formed, it includes Part I and Part II；(iii) Part I of patterning mask layer overlay pattern transparency conducting layer is formed, and patterned transparent conductive layer Part II is uncovered and exposes；(iv) nm plain conductor is formed on the Part II of patterned transparent conductive layer using plating；And (v) removes patterning mask layer.By the manufacture method of the present invention, the line width of frame circuit can be reduced, and then frame region is narrowed.
Description
Technical field
The invention relates to a kind of manufacture method of contact panel.
Background technology
The surface region of general contact panel can divide sensing area and peripheral region generally.Sensing area is user's touch control operation
Part, peripheral region is then around sensing area.Sensing electrode is provided with sensing area, peripheral region then sets the groups such as perimeter circuit
Part.In general, for avoid user operation when be immediately seen the components such as the circuit being correspondingly arranged in peripheral region, it will usually make
Peripheral region is covered with light shield layer or decorative layer, therefore contact panel shows dark border.
Because current running gear is all to be miniaturized as target, it can wish that frame can be more narrow better in product design.
The manufacture method of conventional touch panel border circuit mainly forms perimeter circuit, usual perimeter circuit bag with micro image etching procedure
Containing transparency conducting layer and metal level.However, micro-photographing process because its technique is complicated, has the shortcomings that cost is too high, and circuit line width
It will be limited by decoction etching selectivity, photoresistance thickness and plating filmed metals quality.When circuit line width is less than 10 μm, circuit has
The risk of broken string, and cause fraction defective to be lifted.
Therefore, how to shorten frame conducting wire line width, and maintain good yield to be miniaturized to reach running gear, be
The important research topic of the technical field.
The content of the invention
The present invention provides a kind of manufacture method of contact panel, to shorten the conducting wire line width of contact panel, and has
There is higher yield.
According to the various embodiments of the present invention, it is to provide a kind of manufacture method of contact panel, base is provided comprising (i)
Plate；(ii) patterned transparent conductive layer is formed, it includes Part I and Part II；(iii) patterning mask layer is formed
The Part I of overlay pattern transparency conducting layer, and the Part II of patterned transparent conductive layer is uncovered and exposes；
(iv) nano metal wire is formed on the Part II of patterned transparent conductive layer using plating, and (v) removes patterning
Mask layer.
According to some embodiments of the present invention, the Part II of patterned transparent conductive layer includes multiple wires, and respectively
The width of wire is about 2-8 μm.
According to one or more embodiments of the present invention, the width of nano metal wire is about 2-8 μm.
According to some embodiments of the present invention, the width of nano metal wire is more than the second of patterned transparent conductive layer
The width of partial each wire.
According to some embodiments of the present invention, the width of nano metal wire and the second of patterned transparent conductive layer
The difference of the width of each wire divided is about 0.06 μm to about 0.18 μm.
According to some embodiments of the present invention, nano metal wire is with nano metal line or nano-metal particle stacking
Form.
According to some embodiments of the present invention, the line footpath of nano metal line and the particle diameter of nano-metal particle are about
0.03 μm to about 0.18 μm.
According to some embodiments of the present invention, formed and received on the Part II of patterned transparent conductive layer using plating
The operation of rice plain conductor includes the Part I and Part II for applying voltages to patterned transparent conductive layer.
According to some embodiments of the present invention, the penetrance of nano metal wire is about 30 to 85%.
According to some embodiments of the present invention, nano metal wire includes gold, silver or copper.
According to some embodiments of the present invention, formed and received on the Part II of patterned transparent conductive layer using plating
The operation of rice plain conductor includes：(i) electrolyte is provided, includes interfacial agent；(ii) reference electrode, and reference electrode are provided
Contact electrolyte；(iii) Part II of patterned transparent conductive layer is made to contact electrolyte；And (iv) in reference electrode and schemes
Potential difference is provided between the Part II of case transparency conducting layer.
Some according to the present invention apply mode, and interfacial agent includes cetab (hexadecyl
Trimethyl ammonium bromide, CTAB), oleic acid and oleyl amine.
According to other some embodiments of the present invention, it is to provide a kind of manufacture method of contact panel, is provided comprising (i)
Substrate, there is peripheral region and sensing area, peripheral region is adjoined in peripheral region close to the edge of substrate, sensing area；(ii) pattern is formed
Change transparency conducting layer on substrate, patterned transparent conductive layer includes an at least sensing electrode and an at least periphery wire, and
Sensing electrode and periphery wire are located in sensing area and peripheral region respectively；(iii) patterning mask layer covering sensing electrode is formed,
Periphery wire is not patterned mask layer covering and exposed；(iv) nano metal is formed on the wire of periphery using plating to lead
Line, nano metal wire alignment periphery wire, and (v) removal patterning mask layer.
Brief description of the drawings
Fig. 1 is the manufacture method flow chart of the contact panel illustrated according to some embodiments of the present invention.
Fig. 2-Fig. 6 is the profile of each step of processing procedure of the contact panel illustrated according to some embodiments of the present invention.
Fig. 7 is the electroplanting device schematic diagram illustrated according to some embodiments of the present invention.
Reference：
10:Method
11、12、13、14、15:Operation
100:Contact panel
110:Substrate
110a:Sensing area
110b:Peripheral region
110c:Edge
120:Patterned transparent conductive layer
120a:Part I
120b:Part II
122:Sensing electrode
124:Periphery wire
130:Pattern mask layer
140:Nano metal wire
200:Electroplanting device
210:Reference electrode
220:Working electrode
230:Comparative electrode
240:Electrolyte
D1、D2:Width
Embodiment
A plurality of embodiments of the present invention will be disclosed with schema below, it is as clearly stated, thin in many practices
Section will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.
That is in some embodiments of the present invention, the details in these practices is non-essential.In addition, for the sake of simplified illustration,
Some known usual structures will illustrate it in icon with component in a manner of simply illustrating.
Fig. 1 illustrates the flow chart of the method 10 of the manufacture contact panel of the various embodiments of the present invention.As shown in figure 1, side
Method 10 includes operation 11, operation 12, operation 13, operation 14 and operation 15.Fig. 2-Fig. 6 illustrates some sides of embodiment of the present invention
Profile of the method 10 in each process stage.
Fig. 1 and Fig. 2 is refer to, in operation 11, there is provided substrate 110.According to some embodiments of the present invention, substrate 110
With sensing area 110a and peripheral region 110b, for peripheral region 110b close to the edge 110c of substrate 110, sensing area 110a adjoins week
Border area 110b.Substrate 110 can be flexible base plate or rigid substrates, and flexible base plate is, for example, PET
(Polyethylene terephthalate, PET) substrate or polyimides (Polyimide, PI) substrate, but be not limited to
This.Rigid substrate can be such as glass substrate.
Fig. 1 and Fig. 3 is refer to, in operation 12, forms patterned transparent conductive layer 120 on substrate 110, wherein pattern
Change transparency conducting layer 120 and include Part I 120a and Part II 120b.According to some embodiments of the present invention, patterning
The Part II 120b of transparency conducting layer 120 includes multiple wires, and the width D 1 of each wire is about 2-8 μm, and for example, about 3,5
Or 7 μm.In some embodiments of the present invention, the Part I 120a of patterned transparent conductive layer 120 includes multiple sensing electricity
Pole 122, the Part II 120b of patterned transparent conductive layer 120 include a plurality of periphery wire 124, sensing electrode 122 and periphery
Wire 124 is located in sensing area 110a and peripheral region 110b respectively.
According to some embodiments of the present invention, the material of patterned transparent conductive layer 120 can be tin indium oxide (Indium
Tin Oxide,ITO).It will be understood that the material of patterned transparent conductive layer 120 provided above is only to illustrate, and it is not used to
The limitation present invention, persond having ordinary knowledge in the technical field of the present invention, suitable material should be selected depending on being actually needed.Root
According to some embodiments of the present invention, patterned transparent conductive layer 120 can be formed by deposition, lithographic and etch process, but not
It is limited to this.Deposition manufacture process includes plasma-based chemical gaseous phase depositing method (Plasma Enhanced Chemical Vapor
Deposition, PECVD), physical vaporous deposition (physical vapor deposition, PVD), sputter or other
Suitable deposition manufacture process.In other embodiments, patterned transparent conductive layer 120 can be formed by other suitable processing procedures,
Such as:Wire mark, rotary coating, ink-jet etc..
According to some embodiments of the present invention, burin-in process can be carried out before patterned transparent conductive layer 120 is formed, is made
Substrate 110 shrinks in advance, so as to reduce the deformation during following process.
Fig. 1 and Fig. 4 is refer to, in operation 13, forms the of the patterning overlay pattern transparency conducting layer of mask layer 130
A part of 120a, the Part II 120b of patterned transparent conductive layer are not patterned mask layer 130 and cover and expose.At certain
In a little embodiments, the patterning mask layer 130 formed covers sensing electrode 122, and periphery wire 124 is not patterned shade
Layer 130 is covered and exposed.According to certain embodiments of the invention, patterning mask layer 130 may be, for example, photoresistance, can be by any conjunction
Suitable processing procedure is formed, such as by coating, dry, exposed and developed and formed.In other embodiments, mask layer is patterned
130 be, for example, macromolecule layer, and is formed by screen printing processing.
Fig. 1 and Fig. 5 is refer to, in operation 14, utilizes the Part II 120b electroplated in patterned transparent conductive layer 120
Upper formation nano metal wire 140.In some embodiments, nano metal is formed on periphery wire 124 using plating to lead
Line 140, nano metal wire 140 are directed at periphery wire 124.
Fig. 7 illustrates the schematic diagram of the electroplanting device 200 of one of present invention embodiment.According to some embodiment party of the present invention
Formula, electroplanting device 200 include reference electrode 210, working electrode 220, comparative electrode 230 and electrolyte 240.According to the present invention
Some embodiments, operation 14 also comprise the steps of：(i) electrolyte 240 is provided, it includes interfacial agent (not on figure
Show), (ii) provides reference electrode 210, and reference electrode 210 contacts electrolyte 240, and (iii) with patterned transparent to lead
The substrate 110 of electric layer 120 thereon is working electrode 220, and working electrode 220 is contacted electrolyte 240, and (iv) is joining
Examine and provide potential difference between electrode 210 and working electrode 220.In some embodiments, interfacial agent includes bromination 16
Alkyltrimethylammonium (hexadecyl trimethyl ammonium bromide, CTAB), oleic acid and oleyl amine.In some embodiment party
In formula, operation 14 discharges electronics comprising making electric current pass through comparative electrode 230, and the metal ion in electrolyte is then in working electrode
220 receive electronics, and the surface of periphery wire 124 being deposited on working electrode 220.In some embodiments, sensing electrode
122, which are patterned mask layer 130, covers, and not in contact with electrolyte 240, therefore electrodeposited coating can't be formed in sensing electrode 122.
According to certain embodiments of the invention, electroplating time is the about 10-30 seconds, such as 14,20 or 25 seconds.In some embodiments
In, the electric current by electrode is about 0.1-50mA, for example, 0.5,1,5,10,25,30 or 45mA.In certain embodiments, it is electric
Solution liquid concentration is about 0.005-0.5mol/L, such as 0.02,0.05 or 0.1mol/L.In certain embodiments, electrolyte includes
Silver nitrate (AgNO3) solution, tetra chlorauric acid (HAuCl4.3H2O) solution and (hfac) Cu (PMe3) solution, but be not limited to
This, in other embodiments, is visually actually needed, and selects suitable solution as electrolyte.In certain embodiments, with reference to electricity
Pole and comparative electrode are platinum filament (Pt), but are not limited to this, in other embodiments, are visually actually needed, select suitable material
Material.
According to some embodiments of the present invention, the width of nano metal wire 140 is about 2-8 μm, for example, about 4,6 or 7 μ
m.In some embodiments, the width D 2 of nano metal wire 140 is more than the Part II of patterned transparent conductive layer 120
The width D 1 of 120b each wire (periphery wire 124).According to some embodiments of the present invention, the width of nano metal wire 140
The difference for spending the width D 1 of D2 and the Part II 120b of patterned transparent conductive layer 120 each wire (periphery wire 124) is about
0.06 μm to about 0.18 μm, for example, about 0.1,0.12 or 0.15 μm.
According to some embodiments of the present invention, nano metal wire 140 be with nano metal line (not in shown on figure) or
Nano-metal particle (not in shown on figure) is stacked and formed.In some embodiments, the line footpath and nanometer of nano metal line
The particle diameter of metallic particles is about 0.03 μm to about 0.18 μm, for example, about 0.05,0.1,0.12 or 0.15 μm.According to the present invention certain
A little embodiments, nano metal wire 140 are about 30 to about 85% in the average penetration rate of visible wavelength range, are, for example,
40%th, 50%, 60% or 70%.Therefore, the nano metal wire 140 formed can be transparent wire.In some embodiment party
, can be by the penetrance of the different control nano metal wires 140 of Density Distribution between nano metal line or nano metal ball in formula.Tool
Body is said, the area coverage and thickness of nano metal line or nano metal ball can be controlled by electroplating time, so as to form difference
The nano metal wire 140 of penetrance.
According to some embodiments of the present invention, the material of nano metal wire 140 includes gold, silver or copper.It will be understood that with
The material of the upper nano metal wire 140 lifted is only to illustrate, and is not used to the limitation present invention, in the technical field of the invention
Have usual skill, should be depending on being actually needed, the material of elasticity selection nano metal wire 140.
Fig. 1 and Fig. 6 is refer to, in operation 15, removes patterning mask layer 130, formation has nano metal wire 140
Contact panel 100.
As described above, according to the embodiment of the present invention, metal nano dendrite is set to be selectively deposited at patterning with plating
On transparency conducting layer, nano metal wire is formed.The method is compared with traditional micro-photographing process, due to not by decoction etching selectivity
Influence, the difference of the width of metal level and transparency conducting layer in frame circuit can be significantly reduced to about 0.06- by about 4-6 μm
0.18 μm, and the line width of frame circuit can narrow, and then frame region is narrowed, reach the target of running gear miniaturization.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any to be familiar with this skill
Person, without departing from the spirit and scope of the invention, when various changes and retouching, therefore the protection domain of the present invention can be used as
When depending on after attached claim institute defender be defined.
Claims (13)
1. a kind of manufacture method of contact panel, it is characterised in that include:
One substrate is provided；
A patterned transparent conductive layer is formed on the substrate, wherein the patterned transparent conductive layer include a Part I and
One Part II；
Form a patterning mask layer and cover the Part I, wherein the Part II is not sudden and violent by patterning mask layer covering
Expose；
A nano metal wire is formed on the Part II of the patterned transparent conductive layer using plating；And
Remove the patterning mask layer.
2. the manufacture method of contact panel as claimed in claim 1, it is characterised in that the wherein patterned transparent conductive layer
The Part II includes multiple wires, and respectively 2-8 μm of a width system of the wire.
3. the manufacture method of contact panel as claimed in claim 2, it is characterised in that wherein the nano metal wire is one wide
A width of the degree more than the respectively wire of the Part II of the patterned transparent conductive layer.
4. the manufacture method of contact panel as claimed in claim 3, it is characterised in that wherein width of the nano metal wire
The difference of the width of the respectively wire of degree and the Part II of the patterned transparent conductive layer is 0.06 μm to 0.18 μm.
5. the manufacture method of contact panel as claimed in claim 1, it is characterised in that wherein the nano metal wire is one wide
2-8 μm of degree system.
6. the manufacture method of contact panel as claimed in claim 1, it is characterised in that the wherein nano metal wire system is to receive
Rice metal wire or nano-metal particle, which stack, to be formed.
7. the manufacture method of contact panel as claimed in claim 6, it is characterised in that wherein the line footpath of the nano metal line with
And the particle diameter of the nano-metal particle is 0.03 μm to 0.18 μm.
8. the manufacture method of contact panel as claimed in claim 1, it is characterised in that wherein saturating in the patterning using electroplating
The operation that the nano metal wire is formed on the Part II of bright conductive layer is conductive comprising the patterned transparent is applied voltages to
Part I and the Part II of layer.
9. the manufacture method of contact panel as claimed in claim 8, it is characterised in that the wherein nano metal wire penetrates
Rate is 30 to 85%.
10. the manufacture method of contact panel as claimed in claim 1, it is characterised in that wherein the nano metal wire includes
Gold, silver or copper.
11. the manufacture method of contact panel as claimed in claim 1, it is characterised in that wherein using plating in the patterning
The operation that the nano metal wire is formed on the Part II of transparency conducting layer includes：
An electrolyte is provided, the electrolyte includes an interfacial agent；
A reference electrode is provided, and the reference electrode contacts the electrolyte；
The Part II of the patterned transparent conductive layer is set to contact the electrolyte；And
One potential difference is provided between the reference electrode and the Part II.
12. the manufacture method of contact panel as claimed in claim 11, it is characterised in that wherein the interfacial agent system includes
Cetab, oleic acid and oleyl amine.
13. a kind of manufacture method of contact panel, it is characterised in that include:
A substrate is provided, the substrate has a peripheral region and a sensing area, and the peripheral region senses close to one of substrate edge
Area adjoins the peripheral region；
A patterned transparent conductive layer is formed on the substrate, wherein the patterned transparent conductive layer includes an at least sensing electrode
And an at least periphery wire, the sensing electrode and the periphery wire are located in the sensing area and the peripheral region respectively；
Form a patterning mask layer and cover the sensing electrode, wherein the periphery wire is not sudden and violent by patterning mask layer covering
Expose；
A nano metal wire is formed on the periphery wire using plating, wherein the nano metal wire is directed at the periphery and led
Line；And
Remove the patterning mask layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710928433.7A CN107643849B (en) | 2017-10-09 | 2017-10-09 | Manufacturing method of touch panel |
| TW106135352A TWI643111B (en) | 2017-10-09 | 2017-10-16 | Method for manufacturing the touch panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710928433.7A CN107643849B (en) | 2017-10-09 | 2017-10-09 | Manufacturing method of touch panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107643849A true CN107643849A (en) | 2018-01-30 |
| CN107643849B CN107643849B (en) | 2020-08-25 |
Family
ID=61112169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710928433.7A Expired - Fee Related CN107643849B (en) | 2017-10-09 | 2017-10-09 | Manufacturing method of touch panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107643849B (en) |
| TW (1) | TWI643111B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110333793A (en) * | 2019-05-09 | 2019-10-15 | 业成科技（成都）有限公司 | Flexible touch-control structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11652052B2 (en) | 2021-03-29 | 2023-05-16 | Tpk Advanced Solutions Inc. | Contact structure and electronic device having the same |
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| CN110333793A (en) * | 2019-05-09 | 2019-10-15 | 业成科技（成都）有限公司 | Flexible touch-control structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107643849B (en) | 2020-08-25 |
| TW201915685A (en) | 2019-04-16 |
| TWI643111B (en) | 2018-12-01 |
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