CN107610604B - LED chip, array substrate, display panel and display device - Google Patents
LED chip, array substrate, display panel and display device Download PDFInfo
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Abstract
The invention discloses an LED chip, an array substrate, a display panel and a display device. An LED chip, comprising: a substrate comprising a first side and a second side opposite the first side; a PN light emitting structure located on the first side of the substrate; the switch circuit is positioned on the second surface of the substrate, is electrically connected with the storage capacitor and the PN light-emitting structure, and charges the storage capacitor when being started; and the storage capacitor at least comprises a first capacitor electrode and a second capacitor electrode and is used for providing constant light-emitting current for the PN light-emitting structure. The constant luminous current is provided for the PN luminous structure through the storage capacitor in the LED chip structure, so that the current value passing through each LED is equal, and the uniform luminous brightness of each LED chip is realized.
Description
Technical Field
The embodiment of the invention relates to the technical field of LED display, in particular to an LED chip, an array substrate, a display panel and a display device.
Background
The LED (Light Emitting Diode) is a kind of semiconductor Diode, and is a photoelectric element that emits Light by means of unidirectional conductivity of semiconductor PN junction, and the LED lamp is a lighting fixture widely used in the market in the world at present, and has the advantages of small volume, high brightness, low power consumption, less heat generation, long service life, environmental protection, and the like, and has rich color types, and is well received by consumers. Meanwhile, the LED chip plays an indispensable role as a backlight in electronic products requiring a display screen, such as mobile phones and televisions, and as the size of the electronic products is continuously reduced, the size of the LED chip is also required to be greatly reduced.
At present, an actively driven Micro LED structure is formed by fabricating a Thin Film Transistor (TFT) array circuit on a conventional TFT substrate, and then transferring an LED to a corresponding pixel unit. Since the LEDs are driven by current, the magnitude of the current directly affects the brightness of the LEDs, and in order to ensure uniform brightness of the pixel units, the current value passing through each LED must be equal. In the prior art, in order to ensure that the current passing through each LED in the LED array is equal, the current difference passing through different LEDs is made up by changing the resistance value of a line and the like, but in a large-size high-resolution display panel, the problem of uneven brightness of the LEDs still exists by adopting the method.
Disclosure of Invention
The invention provides an LED chip, an array substrate, a display panel and a display device, which aim to realize uniform brightness of the LED chip.
To achieve the object, in a first aspect, an embodiment of the present invention provides an LED chip, including:
a substrate comprising a first side and a second side opposite the first side;
a PN light emitting structure located on the first side of the substrate;
the switch circuit is positioned on the second surface of the substrate, is electrically connected with the storage capacitor and the PN light-emitting structure, and charges the storage capacitor when being started;
and the storage capacitor at least comprises a first capacitor electrode and a second capacitor electrode and is used for providing constant light-emitting current for the PN light-emitting structure.
Optionally, the PN light emitting structure includes an N-type semiconductor layer and a P-type semiconductor layer stacked in sequence, and a composite layer formed between the N-type semiconductor layer and the P-type semiconductor layer.
Optionally, the main body material of the PN light emitting structure is GaN.
Optionally, the PN light emitting structure is formed using an organometallic chemical vapor deposition process.
Optionally, the switching circuit comprises at least one thin film transistor.
Optionally, the thin film transistor includes a gate electrode formed on the second surface of the substrate, a first insulating layer on a side of the substrate and the gate electrode away from the PN light emitting structure, a semiconductor layer on a side of the first insulating layer away from the substrate, and a source electrode and a drain electrode on both ends of the semiconductor layer, wherein the drain electrode is electrically connected to the P-type semiconductor layer.
Optionally, the first capacitor electrode is formed on a surface of the P-type semiconductor layer on a side away from the N-type semiconductor layer, the first capacitor is electrically connected to the drain electrode through a first conductive material, and the first conductive material is insulated from the N-type semiconductor layer.
Optionally, a first through hole is formed between the drain and the first capacitor, the first conductive material is filled in the first through hole, and a second insulating layer is formed between the first conductive material and the first through hole;
or the first conductive material is formed on one side of the LED chip, and a third insulating layer is formed between the first conductive material and the side wall of the LED chip.
Optionally, the second capacitor electrode and the gate are disposed on the same layer, and the second capacitor electrode is electrically connected to the N-type semiconductor layer through a second through hole in the substrate.
Optionally, the P-type semiconductor layer is etched with a groove to expose the N-type semiconductor layer.
In a second aspect, an embodiment of the present invention further provides an array substrate, where the array substrate includes a plurality of scan lines, a plurality of data lines, a plurality of common lines, and the LED chip provided in any embodiment of the present invention;
the scanning line and the common line are in insulated intersection with the data line to define a pixel region, the LED chip is arranged in the pixel region, the scanning line is electrically connected with the control end of the switch circuit, the data line is electrically connected with the data input end of the switch circuit, and the common line is electrically connected with the output end of the PN light-emitting structure.
In a third aspect, an embodiment of the present invention further provides a display panel, including the array substrate provided in any embodiment of the present invention.
In a fourth aspect, an embodiment of the present invention further provides a display device, including the display panel provided in any embodiment of the present invention.
According to the invention, the storage capacitor and the switch circuit are arranged in the LED chip, when the switch circuit is started, the storage capacitor is charged according to the input driving signal, so that the storage capacitor provides a constant luminous current for the PN luminous structure, and the current value of each LED passing through each data line can be equal after the LED chip is arranged in each pixel of the array substrate, thereby solving the problem of uneven LED luminous brightness caused by unequal currents of the LEDs in the array circuit and realizing the uniform LED luminous brightness; in addition, the PN light-emitting structure and the switch circuit are integrated in the LED chip and are in a longitudinal laminated structure, so that the area occupied by the conventional switch tube and the LED chip is greatly reduced, and a display device with high pixel density and high resolution can be realized.
Drawings
Fig. 1 is a schematic structural diagram of an LED chip according to an embodiment of the present invention;
fig. 2 is an equivalent circuit diagram of an LED chip according to a first embodiment of the present invention;
fig. 3 is a schematic view of an equivalent structure of an array substrate according to a second embodiment of the present invention;
fig. 4 is a schematic structural diagram of a display panel according to a third embodiment of the present invention;
fig. 5 is a schematic structural diagram of a display device according to a fourth embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
Fig. 1 is a schematic view of an LED chip structure according to an embodiment of the present invention, where the LED chip provided in this embodiment is disposed in a pixel of an array substrate, so that the pixel can uniformly emit light, as shown in fig. 1, a PN light emitting structure of the LED chip and a switch circuit are integrated into a structure, which may specifically include:
a substrate 10, the substrate 10 comprising a first side 101 and a second side 102 opposite to the first side;
a PN light emitting structure 11 on the first side 101 of the substrate 10;
the switch circuit 12 is located on the second surface 102 of the substrate 10, the switch circuit 12 is electrically connected with the storage capacitor C and the PN light-emitting structure 11, and the storage capacitor C is charged when the switch circuit 12 is turned on;
and the storage capacitor C, which includes at least a first capacitor electrode 121 and a second capacitor electrode 123, is used for providing a constant light emitting current for the PN light emitting structure 11.
It should be noted that the positions of the first capacitor electrode 121 and the second capacitor electrode 123 in the present embodiment are not limited to the positions shown in fig. 1, and fig. 1 is only an exemplary illustration as long as the storage capacitor C formed by the first capacitor electrode 121 and the second capacitor electrode 123 can provide a constant light emitting current for the PN light emitting structure 11.
In the above scheme, the substrate 10 may be made of a silicon crystal material, the PN light emitting structure 11 may be formed on the first surface 101 of the substrate 10, and the PN light emitting structure 11 may be formed by an organic metal chemical vapor deposition process and may include an N-type semiconductor layer 111 and a P-type semiconductor layer 113 that are sequentially stacked, and a composite layer 112 formed between the N-type semiconductor layer 111 and the P-type semiconductor layer 113. The PN light emitting structure 11 in the embodiment of the invention is a Micro light emitting diode (Micro LED), and the Micro LED can be driven to emit light by using a small current. In this embodiment, the material of the PN light emitting structure 11 may be selected from various materials, such as GaN, GaAs, InGaN, AlInGaP, etc., and the PN light emitting structure 11 of different materials may emit light of different colors, for example, the material of the PN light emitting structure 11 of this embodiment is preferably GaN (gallium nitride) material, and correspondingly emits blue light. Optionally, the PN light emitting structure 11 may further include a P-type electrode formed on a side of the P-type semiconductor layer 113 away from the substrate 10, and the P-type electrode is electrically contacted with the P-type semiconductor layer 113. In addition, since the P-type semiconductor layer 113 is made of GaN, the doping concentration and mobility are relatively low, and therefore, a transparent contact layer (not shown in fig. 1) is disposed on the P-type semiconductor layer 113 to obtain ohmic contact between the P-type semiconductor layer 113 and the P-type electrode, so as to ensure that the current is uniformly distributed in the P-type semiconductor layer 113. The P-type electrode is a layer of conductive material plated on the P-type semiconductor layer 113, and may be a transparent conductive material such as metal mesh, nano silver, and graphene, for example, to manufacture a transparent display device.
Optionally, based on the above scheme, when the P-type electrode is not entirely disposed, a passivation layer may be further disposed on the transparent contact layer to protect the transparent contact layer and the yield of the subsequent packaging. In addition, the P-type semiconductor layer 113 is etched with a groove to expose the N-type semiconductor layer 111. An N-type electrode 122 is formed on the exposed N-type semiconductor layer 111, and the N-type electrode 122 is also a layer of conductive material plated on the N-type semiconductor layer 111, and may be a transparent conductive material such as metal mesh, nano silver, graphene, and the like. Similarly, a passivation layer may be formed on the N-type semiconductor layer 111.
In this embodiment, the switch circuit 12 includes at least one thin film transistor, and the thin film transistor is located on the second surface 102 of the substrate 10. Optionally, the thin film transistor includes a gate electrode 114 formed on the second surface 102 of the substrate 10, a first insulating layer 115 located on a side of the substrate 10 and the gate electrode 114 away from the PN light emitting structure, a semiconductor layer 116 located on a side of the first insulating layer 115 away from the substrate 10, and a drain electrode 117 and a source electrode 118 located at two ends of the semiconductor layer 116, wherein a gate electrode electrically contacting the gate electrode 114 is formed on a side of the gate electrode 114 away from the substrate 10. The gate electrode may be a transparent conductive material. The drain 117 is electrically connected to the PN emitting structure 11 for outputting a light emitting signal to the PN emitting structure 11 and the storage capacitor C. Specifically, the drain electrode 117 and the P-type semiconductor layer 113 of the PN light emitting structure may be electrically connected, wherein there are various methods for electrically connecting the P-type electrode and the P-type semiconductor layer 113 through a transparent contact layer, where the electrical connection is achieved through a first via (not shown in fig. 1) formed between the drain electrode 117 and the P-type electrode 121, so that the drain electrode 117 and the P-type semiconductor layer 113 are electrically connected. The first through hole is filled with a first conductive material for realizing conductivity. The first via hole may be positioned within the LED chip between the drain electrode 117 and the P-type semiconductor layer 113 with a second insulating layer (not shown in fig. 1) formed between the conductive material and the first via hole. Optionally, referring to fig. 1, the first conductive material 120 may also be formed on one side of the LED chip, and a third insulating layer 119 is formed between the first conductive material 120 and the sidewall of the LED chip. Alternatively, the first conductive material 120 and the first capacitor electrode 121 may be integrally formed. The second insulating layer and the third insulating layer 119 are provided to prevent the drain electrode 117 from being electrically connected to the N-type semiconductor layer 111.
In this embodiment, the storage capacitor at least includes a first capacitor electrode and a second capacitor electrode, and is configured to provide a constant light emitting current for the PN light emitting structure. When the PN light emitting structure and the thin film transistor are electrically conducted through the electrodes, a storage capacitor is formed between the PN light emitting structure and the thin film transistor, wherein the first capacitor electrode 121 is formed on the surface of the P-type semiconductor layer 113 away from the N-type semiconductor layer 111, and can be a P-type electrode of the P-type semiconductor layer 113, the first capacitor electrode 121 is electrically connected with the drain electrode 117 through the first conductive material, and the first conductive material is insulated from the N-type semiconductor layer 111 through the insulating layer. The second capacitor electrode 123 and the gate 114 are disposed at the same layer, the second capacitor electrode 123 is electrically connected to the N-type semiconductor layer 111 through a second via 124 in the substrate 10, and the second conductive material is filled in the second via 124.
In this embodiment, an equivalent circuit diagram of the LED chip can be shown in fig. 2. Optionally, the thin film transistor of this embodiment is a P-type thin film transistor, and the operating principle of the LED chip is as follows: the thin film transistor is turned on by applying a turn-on voltage to the gate 114 of the thin film transistor. At this time, a reference voltage (2.5V to 3.3V) is applied to the source 118 of the thin film transistor, the drain 117 of the thin film transistor outputs a driving signal to charge the storage capacitor C while driving the PN light emitting structure 11 to emit light, and the drain 117 of the thin film transistor is electrically connected to the P-type electrode of the PN light emitting structure 11 to make the P-type semiconductor layer 113 a positive voltage, so that a voltage difference is formed between the P-type semiconductor layer 113 and the N-type semiconductor layer 111, and a hole injected into the N-type semiconductor layer 111 by the P-type semiconductor layer 113 of the PN light emitting structure 11 and an electron injected into the P-type semiconductor layer 113 from the N-type semiconductor layer 111 are recombined when the recombination layer 112 between the N-type semiconductor layer 111 and the P-type semiconductor layer 113 meet each other, and the electron falls to a lower energy level and releases energy as a photon. In the above process, since the voltage difference formed between the first capacitor electrode 121 and the second capacitor electrode 123 of the storage capacitor C is fixed, the current passing through the PN light emitting structure 11 is fixed, and thus the light emitting brightness of the PN light emitting structure 11 is uniform.
In this embodiment, the first capacitor electrode is at least partially opposite to the second capacitor electrode, and the storage capacitance can be changed by changing the distance and/or the opposite area between the first capacitor electrode and the second capacitor electrode.
According to the technical scheme of the embodiment, the storage capacitor and the switch circuit are arranged in the LED chip, when the switch circuit is started, the storage capacitor is charged according to the input driving signal, so that the storage capacitor provides constant light-emitting current for the PN light-emitting structure, and the LED chip is arranged in each pixel of the array substrate, so that the current value of each LED passing through each data line is equal, the problem that the LED light-emitting brightness is not uniform due to unequal currents of the LEDs in the array circuit is solved, and the uniform light-emitting brightness of the LED chip is realized; in addition, the PN light-emitting structure and the switch circuit are integrated in the LED chip and are in a longitudinal laminated structure, so that the area occupied by the conventional switch tube and the LED chip is greatly reduced, and a display device with high pixel density and high resolution can be realized.
Example two
Fig. 3 is a schematic view of an equivalent structure of an array substrate according to a second embodiment of the present invention, as shown in fig. 3, the present embodiment is applicable to an active driving array substrate, and the array substrate uniformly emits light, and the array substrate includes a plurality of scan lines 310, a plurality of data lines 311, a plurality of common lines 312, and LED chips 314 provided in the above embodiments.
The scanning line 310 and the common line 312 of the array substrate are in insulated intersection with the data line 311 to define a pixel region 313, the LED chip 314 is arranged in the pixel region 313, the scanning line 310 is electrically connected to the control end of the switch circuit, the data line 311 is electrically connected to the data input end of the switch circuit, and the common line 312 is electrically connected to the output end of the PN light-emitting structure.
Illustratively, the working principle of the array substrate is as follows:
the scan line 310 of the array substrate gives a low-voltage turn-on signal to control the control terminal (gate of the thin film transistor) of the switch circuit, so that the thin film transistor is turned on. The data line 311 is used for providing a reference voltage (2.5V to 3.3V), and is electrically connected to the source of the thin film transistor in the switch circuit.
According to the technical scheme of the embodiment, the LED chips of the embodiment are arranged in each pixel of the array substrate, so that the current value of each LED passing through each data line is equal, the problem of uneven LED luminance caused by unequal currents of the LEDs in an array circuit is solved, and the even array substrate luminance is realized; in addition, the PN light-emitting structure and the switch circuit are integrated in the LED chip and are in a longitudinal laminated structure, so that the area occupied by the conventional switch tube and the LED chip is greatly reduced, and a display device with high pixel density and high resolution can be realized.
EXAMPLE III
Fig. 4 is a schematic structural diagram of a display panel according to a third embodiment of the present invention, and as shown in fig. 4, the display panel 410 includes the array substrate 411 according to the third embodiment. The display panel includes a frame area 401 and a display area 402, and each LED chip on the array substrate 411 is located in the display area 402.
The display panel provided by the embodiment comprises the array substrate provided by the embodiment, and has the same functions and beneficial effects.
Example four
Fig. 5 is a schematic structural diagram of a display device according to a fourth embodiment of the present invention. As shown in fig. 5, the display device 510 of the present embodiment includes the display panel 511 according to the above embodiments of the present invention. The display device may be a mobile phone, a computer, a television, an intelligent wearable display device, or a windshield, a display cabinet, a billboard, or a home glass of a vehicle, and the present embodiment does not specially limit the display device.
The display device provided by the embodiment comprises the display panel provided by the embodiment, and has the same functions and beneficial effects.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (12)
1. An LED chip, comprising:
a substrate comprising a first side and a second side opposite the first side;
a PN light emitting structure located on the first side of the substrate;
the switch circuit is positioned on the second surface of the substrate, is electrically connected with the storage capacitor and the PN light-emitting structure, and charges the storage capacitor when being started;
the storage capacitor at least comprises a first capacitor electrode and a second capacitor electrode and is used for providing constant light-emitting current for the PN light-emitting structure;
the PN light-emitting structure comprises an N-type semiconductor layer, a P-type semiconductor layer and a composite layer, wherein the N-type semiconductor layer and the P-type semiconductor layer are sequentially stacked, and the composite layer is formed between the N-type semiconductor layer and the P-type semiconductor layer;
the PN light-emitting structure further comprises a P-type electrode formed on one side, far away from the substrate, of the P-type semiconductor layer, the P-type electrode is in electrical contact with the P-type semiconductor layer, and the first capacitor electrode is used for multiplexing the P-type electrode.
2. The LED chip of claim 1, wherein the host material of said PN emitting structure is GaN.
3. The LED chip of claim 2, wherein said PN emission structure is formed using an organometallic chemical vapor deposition process.
4. The LED chip of claim 1, wherein said switching circuit comprises at least one thin film transistor.
5. The LED chip of claim 4, wherein said thin film transistor comprises a gate electrode formed on said second surface of said substrate, a first insulating layer on a side of said substrate and said gate electrode away from said PN light emitting structure, a semiconductor layer on a side of said first insulating layer away from said substrate, and a source electrode and a drain electrode at both ends of said semiconductor layer, wherein said drain electrode is electrically connected to said P-type semiconductor layer.
6. The LED chip of claim 5, wherein the first capacitor electrode is formed on a surface of the P-type semiconductor layer on a side away from the N-type semiconductor layer, the first capacitor is electrically connected to the drain electrode through a first conductive material, and the first conductive material is insulated from the N-type semiconductor layer.
7. The LED chip of claim 6, wherein a first via is formed between the drain and the first capacitor, the first conductive material is filled in the first via, and a second insulating layer is formed between the first conductive material and the first via;
or the first conductive material is formed on one side of the LED chip, and a third insulating layer is formed between the first conductive material and the side wall of the LED chip.
8. The LED chip of claim 6, wherein the second capacitor electrode is disposed on the same layer as the gate, and the second capacitor electrode is electrically connected to the N-type semiconductor layer through a second via in the substrate.
9. The LED chip of claim 1, wherein the P-type semiconductor layer is etched with a groove to expose the N-type semiconductor layer.
10. An array substrate comprising a plurality of scan lines, a plurality of data lines, a plurality of common lines, and the LED chip of any one of claims 1 to 9;
the scanning line and the common line are in insulated intersection with the data line to define a pixel region, the LED chip is arranged in the pixel region, the scanning line is electrically connected with the control end of the switch circuit, the data line is electrically connected with the data input end of the switch circuit, and the common line is electrically connected with the output end of the PN light-emitting structure.
11. A display panel comprising the array substrate according to claim 10.
12. A display device characterized by comprising the display panel according to claim 11.
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| JPS6182466A (en) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | Photosensor |
| JP2001021919A (en) * | 1999-07-07 | 2001-01-26 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| US7923715B2 (en) * | 2008-12-06 | 2011-04-12 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Chalcogenide nanoionic-based radio frequency switch |
| CN102750904A (en) * | 2012-07-18 | 2012-10-24 | 刘纪美 | Active addressing single-chip LED microdisplay |
| CN103197796A (en) * | 2013-03-29 | 2013-07-10 | 京东方科技集团股份有限公司 | Touch display device and driving method thereof |
| US9105238B2 (en) * | 2013-04-25 | 2015-08-11 | International Business Machines Corporation | Active matrix triode switch driver circuit |
| CN103310732B (en) * | 2013-06-09 | 2015-06-03 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
| CN104021757A (en) * | 2014-05-30 | 2014-09-03 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof, and display apparatus |
| CN104932163B (en) * | 2015-07-03 | 2019-03-19 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
| CN105045435B (en) * | 2015-09-11 | 2018-03-30 | 京东方科技集团股份有限公司 | A kind of In-cell touch panel and display device |
| CN106384739B (en) * | 2016-08-29 | 2019-05-07 | 上海天马微电子有限公司 | Organic light emitting display panel, driving method thereof and organic light emitting display device |
| CN106784173B (en) * | 2016-11-11 | 2018-09-21 | 聚灿光电科技股份有限公司 | LED chip and preparation method thereof with capacitance structure |
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