CN107482071A - Heterojunction solar battery and preparation method thereof - Google Patents
Heterojunction solar battery and preparation method thereof Download PDFInfo
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- CN107482071A CN107482071A CN201710606906.1A CN201710606906A CN107482071A CN 107482071 A CN107482071 A CN 107482071A CN 201710606906 A CN201710606906 A CN 201710606906A CN 107482071 A CN107482071 A CN 107482071A
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- copper cash
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- heterojunction solar
- solar battery
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052802 copper Inorganic materials 0.000 claims abstract description 76
- 239000010949 copper Substances 0.000 claims abstract description 76
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052709 silver Inorganic materials 0.000 claims abstract description 59
- 239000004332 silver Substances 0.000 claims abstract description 59
- 238000003466 welding Methods 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 58
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 241000446313 Lamella Species 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The present invention relates to a kind of heterojunction solar battery, and it includes battery main body and the electrode being arranged on the battery main body；The electrode includes first electrode and second electrode；The first electrode includes some overlay film copper cash be arrangeding in parallel；The side welding of the overlay film copper cash is fitted on the side surface of battery main body one；The overlay film copper cash includes copper cash and the organic conductive layers being coated on outside the copper cash.The heterojunction solar battery, silver paste is at least partly replaced using overlay film copper cash, so as to reduce the usage amount of silver paste, so as to reduce the cost of heterojunction solar battery.The present invention is especially suitable for hetero-junctions heterojunction solar battery, the usage amount of low temperature silver paste can be further reduced, because the cost of low temperature silver paste is much higher than the cost of high temperature silver paste, so can be with the cost of more efficient reduction hetero-junctions heterojunction solar battery.Present invention also offers a kind of preparation method of heterojunction solar battery.
Description
Technical field
The present invention relates to field of photovoltaic technology, more particularly to a kind of heterojunction solar battery and preparation method thereof.
Background technology
Heterojunction solar battery is a kind of typical efficient solar battery, and it has, and temperature coefficient is low, no photo attenuation effect
Answer (LID), potential-free induce attenuation effect (PID) and can be with generating electricity on two sides the features such as.The reality of heterojunction solar battery
Generated energy can be higher by 15%~30% than the polycrystal silicon cell of same nominal power, be especially suitable for answering for distributed power generation market
With.
At present, the metallization of heterojunction solar battery uses low temperature silver paste printing technology more.In order to meet the hetero-junctions sun
The electrical performance requirements of energy battery, the silver content of low temperature silver paste are higher than the silver content for the high temperature silver paste that conventional batteries use, therefore
And the cost of low temperature silver paste is higher.In addition to silicon chip, the cost ratio highest shared by the cost of low temperature silver paste, the hetero-junctions sun is accounted for
The 20% of energy battery totle drilling cost, causes heterojunction solar battery cost higher.
The content of the invention
Based on this, it is necessary to for silver paste cost in existing heterojunction solar battery it is higher the problem of, there is provided it is a kind of
Silver paste is reduced to use and the heterojunction solar battery of cost can be reduced.
A kind of heterojunction solar battery, including battery main body and the electrode that is arranged on the battery main body；It is described
Electrode includes first electrode and second electrode；The first electrode includes some overlay film copper cash be arrangeding in parallel；The overlay film
The side welding of copper cash is fitted on the side surface of battery main body one；The overlay film copper cash includes copper cash and is coated on described
Organic conductive layers outside copper cash.
Above-mentioned heterojunction solar battery, silver paste is at least partly replaced using overlay film copper cash, so as to reduce making for silver paste
Dosage, so as to reduce the cost of heterojunction solar battery.The present invention is especially suitable for heterojunction solar battery, Ke Yijin
One step reduces the usage amount of low temperature silver paste, because the cost of low temperature silver paste is much higher than the cost of high temperature silver paste, so can be more
The cost of heterojunction solar battery is reduced added with effect.
In one of the embodiments, if the first electrode also includes being printed on the side surface of battery main body one
The dry silver grating line be arrangeding in parallel；The silver grating line is staggered with the overlay film copper cash.
In one of the embodiments, the organic conductive layers are selected from conductive polymer coating or conductive organic composition layer.
In one of the embodiments, a diameter of 80 μm~300 μm of the overlay film copper cash.
In one of the embodiments, the thickness of the organic conductive layers is 5 μm~30 μm.
In one of the embodiments, the first electrode is front electrode, the bar of overlay film copper cash in the first electrode
Number is 15~35.
In one of the embodiments, the first electrode is front electrode, the bar of overlay film copper cash in the first electrode
Number is 45~85.
Present invention also offers a kind of preparation method of heterojunction solar battery.
A kind of preparation method of heterojunction solar battery, comprises the following steps:
Battery main body is provided；
Overlay film copper cash hot pressing is welded on a side surface of the battery main body.
The preparation method of above-mentioned heterojunction solar battery, low temperature silver paste is at least partly replaced using overlay film copper cash, so as to
The usage amount of low temperature silver paste is reduced, so as to effectively reduce the cost of heterojunction solar battery.
In one of the embodiments, before overlay film copper cash hot pressing is welded on a side surface of the battery main body,
Also include the printing on a side surface of the battery main body and form some silver grating lines；The silver grating line is handed over the overlay film copper cash
Mistake is set.
In one of the embodiments, the welding temperature of the thermocompression bonding is 220 DEG C~240 DEG C.
Brief description of the drawings
Fig. 1 is the cross section structure schematic diagram of the heterojunction solar battery of an embodiment of the present invention.
Fig. 2 is the first electrode structural representation of the heterojunction solar battery of an embodiment of the present invention.
Fig. 3 is the cross section structure schematic diagram of the overlay film copper cash of the present invention.
Fig. 4 is the first electrode structural representation of the heterojunction solar battery of another embodiment of the present invention.
Fig. 5 is heterojunction solar battery A1 J-V curve maps.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with embodiment
The present invention is further elaborated.It should be appreciated that embodiment described herein is only to explain the present invention,
It is not intended to limit the present invention.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more
The arbitrary and all combination of related Listed Items.
Referring to Fig. 1, a kind of heterojunction solar battery 100, including battery main body 110 and it is arranged on battery main body 110
On electrode 120.
Wherein, battery main body 110 is the core component of heterojunction solar battery 100, and it has PN junction, can produce light
Raw electric current.
In heterojunction solar battery, battery main body 110 generally comprises crystalline silicon lamella 101, is sequentially located at crystalline silicon
First intrinsic layer 102 of the side of lamella 101, the first doped amorphous silicon layer 103, the first transparent conductive film layer 104 and successively
Positioned at the second intrinsic layer 105, the second doped amorphous silicon layer 106, the second transparent conductive film layer of the opposite side of crystalline silicon lamella 101
107.It is, of course, understood that in heterojunction solar battery, the concrete structure of battery main body 110 is not limited to above-mentioned
Structure, it can also be that those skilled in the art think suitable other structures.Such as the second transparent conductive film can be not provided with
Layer 107, also or the second intrinsic layer 105 and the second doped amorphous silicon layer 106 can be not provided with.
Preferably, the material of the first transparent conductive film layer 104 and the second transparent conductive film layer 107, which is selected from, mixes tin oxidation
Indium (ITO), Al-Doped ZnO (AZO), boron-doping zinc oxide (BZO), tungsten-doped indium oxide (IWO), mix titanium indium oxide (ITiO) or mix
One or more in cerium indium oxide (ICO).
Wherein, the main function of electrode 120 is to export electric current caused by battery main body 110.Electrode 120 includes first
Electrode and second electrode.Wherein, the main function of first electrode is to export the carrier of the side surface of battery main body 110 1；
And the main function of second electrode is, the carrier of 110 another side surface of battery main body is exported.
Referring to Fig. 2, first electrode of the invention includes some overlay film copper cash 121 be arrangeding in parallel；The side of overlay film copper cash 121
Face welding is fitted on the side surface of battery main body 110 1.Preferably, a diameter of 80 μm~300 μm of overlay film copper cash 121.
In the present invention, overlay film copper cash 121 includes copper cash 1211 and the organic conductive layers being coated on outside copper cash 1211
1212。
Specifically, copper cash 1211 is the core main body of overlay film copper cash 121, main to play a part of to transmit electric current.Preferably, copper
A diameter of 20 μm~290 μm of line 1211.
Specifically, organic conductive layers 1212 are clad, equivalent to the shell of overlay film copper cash 121.Pass through organic conductive layers
1212 are welded on copper cash 1211 on the surface of battery main body 110.Low-temperature alloy is compared to, organic conductive layers 1212 do not need
Rare metal (such as In etc.), so as to effectively reduce cost.In addition, low-temperature alloy in welding, it is necessary to set solder joint,
Need to be aligned during welding, so that metallization process is complicated, and the welding of organic conductive layers 1212, it is not necessary to solder joint is set, no
Need to be aligned, so as to which metallization process simplifies.
Preferably, organic conductive layers 1212 are selected from conductive polymer coating or conductive organic composition layer.
It is highly preferred that the one kind of conducting polymer in polythiophene, polyaniline or polypyrrole in conductive polymer coating
It is or several.
Conductive organic composition layer includes organic matrix and the conducting particles being dispersed in organic matrix.Preferably, have
One or more of the machine matrix in polyurethane, polyacrylate or epoxy resin；Conducting particles is selected from carbon dust, graphene
One or more in powder, nickel powder, zinc powder, copper powder, glass putty.
Preferably, the thickness of organic conductive layers 1212 is 5 μm~30 μm.
Referring to Fig. 3, in some cases, first electrode is also some on the side surface of battery main body 110 1 including being printed on
The silver grating line 122 be arrangeding in parallel；Silver grating line 122 is staggered with overlay film copper cash 121.
It is highly preferred that silver grating line 122 is vertical with overlay film copper cash 121.Namely silver grating line 122 interlocks with overlay film copper cash 121
Form square net.
In the present invention, first electrode can be heterojunction solar battery front electrode or hetero-junctions too
The backplate of positive energy battery.Second electrode can use identical structure with first electrode, can also use different structures.
In an embodiment, the front electrode in heterojunction solar battery is with negative electrode only by overlay film copper
Line is formed.
It is highly preferred that the contact resistance of transparency conducting layer and overlay film copper cash is in 2-20m Ω cm2。
In this embodiment, the diameter of overlay film copper cash is preferably 80 μm -200 μm, more preferably 100 μm -150 μm.Its
In, the diameter of copper cash is preferably 20 μm -190 μm, more preferably 60 μm -130 μm；The thickness of organic conductive layers is preferably 5 μm -30
μm, more preferably 10 μm -20 μm.
In front electrode, the number of battery front side overlay film copper cash is 45-85, more preferably 55-75.
Overleaf in electrode, the number of overlay film copper cash is 1-3 times of the number of the overlay film copper cash in front electrode.
In another embodiment, the front electrode in heterojunction solar battery is with negative electrode by overlay film copper
Line and silver grating line are formed.
It is highly preferred that the contact resistance of silver grating line and overlay film copper cash is in 0.2-5m Ω cm2。
In this embodiment, the diameter of overlay film copper cash is preferably 150 μm -300 μm, more preferably 200 μm -250 μm.Its
In, the diameter of copper cash is preferably 90 μm -290 μm, more preferably 160 μm -230 μm.The thickness of organic conductive layers is preferably 5 μm-
30 μm, more preferably 10 μm -20 μm.
In this embodiment, the width of silver grating line is preferably 30 μm -70 μm, more preferably 30 μm -45 μm.
In front electrode, the number of silver grating line is preferably 60-100, more preferably 70-90.The number of overlay film copper cash is excellent
Elect 15-35, more preferably 20-25 as.
Overleaf in electrode, silver grating line number is 1-4 times of the silver grating line number in front electrode；The number of overlay film copper cash
For 1-3 times of the number of the overlay film copper cash in front electrode.
It is, of course, understood that the knot of the front electrode and backplate in the heterojunction solar battery of the present invention
Structure each independently selects, can be the same, can also be different.As long as it will also be appreciated that in front electrode and negative electrode
One first electrode structure using the present invention, another electrode are not particularly limited.
The heterojunction solar battery of the present invention, silver paste is at least partly replaced using overlay film copper cash, so as to reduce silver paste
Usage amount, so as to reduce the cost of heterojunction solar battery.The present invention is especially suitable for hetero-junctions heterojunction solar
Battery, the usage amount of low temperature silver paste can be further reduced, because the cost of low temperature silver paste is much higher than the cost of high temperature silver paste,
So can be with the cost of more efficient reduction hetero-junctions heterojunction solar battery.
Present invention also offers a kind of preparation method of heterojunction solar battery.
A kind of preparation method of heterojunction solar battery, comprises the following steps：
S1, provide battery main body；
S2, overlay film copper cash hot pressing is welded on the surface of battery main body.
Wherein, the preparation method of battery main body, method known in those skilled in the art can be used, it is no longer superfluous herein
State.
In step s 2, it is preferable that the welding temperature of thermocompression bonding is 220 DEG C~240 DEG C；More preferably 230 DEG C.So
The adhesion of overlay film copper cash and transparency conducting layer can further be improved.
Preferably, the weld interval of thermocompression bonding is 1min~5min；More preferably 3min.
The specific steps of thermocompression bonding are preferably：Overlay film copper cash is first arranged in the specified location of battery main body, then will weldering
Connect pressing plate to be pressed on battery main body, be then electrified to weld, after welding finishes, welding pressing plate is withdrawn.
In step s 2, it is preferable that before overlay film copper cash hot pressing is welded on the surface of battery main body, be additionally included in electricity
The surface printing of tank main body forms some silver grating lines.So the difficulty of printing can be effectively reduced, while ensure silver grating line with covering
Good electrical contact at film copper cash cross-point.
The printing of silver grating line can use printing process known in those skilled in the art, will not be repeated here.
It is, of course, understood that the invention is not limited in first print silver grating line, rear thermocompression bonding overlay film copper cash；Also may be used
To be first thermocompression bonding overlay film copper cash, silver grating line is printed afterwards.
The preparation method of the heterojunction solar battery of the present invention, low temperature silver paste is at least partly replaced using overlay film copper cash,
So as to reduce the usage amount of low temperature silver paste, so as to effectively reduce the cost of heterojunction solar battery.
Below in conjunction with specific embodiment, the invention will be further elaborated.
Embodiment 1
Cleaning and texturing is carried out to N-type silicon chip (125mm*125mm).Sunk using the one side of N-type silicon chips of the PECVD after making herbs into wool
Intrinsic hydrogenated amorphous silicon membrane (the i-a-Si of product:) and N-type hydrogenation non crystal silicon film (n-a-Si H:H)；Using PECVD in N-type silicon
The another side deposition intrinsic hydrogenation non crystal silicon film (i-a-Si of piece:) and p-type hydrogenation non crystal silicon film (p-a-Si H:H).
(RPD) is deposited respectively in N-type hydrogenation non crystal silicon film (n-a-Si using reaction and plasma:H) and p-type is hydrogenated amorphous
Silicon thin film (p-a-Si:H ITO is deposited on), forms the first transparency conducting layer and the second transparency conducting layer.
Obtain battery main body.
Silver grating line (200, width 65um) and main grid are formed by silk-screen printing low temperature silver paste at the back side of battery main body
(bar number 4, width 1.1cm).
Battery main body 50 a diameter of 150um of front parallel arrangement overlay film copper cash (FURUKAWA companies
MAGNET WIRE), the thermal compression welding 3min at 230 DEG C.
Heterojunction solar battery is obtained, is denoted as A1.
Embodiment 2
Following steps are carried out on the identical battery main body of embodiment 1：
Silver grating line (200, width 65um) and main grid are formed by silk-screen printing low temperature silver paste at the back side of battery main body
(bar number 4, width 1.1cm).
In the front of battery main body by silk-screen printing low temperature silver paste formation silver grating line (bar number 74, width 65um), then
25 a diameter of 150um of front parallel arrangement of battery main body overlay film copper cash (the MAGNET WIRE of FURUKAWA companies),
Thermal compression welding 3min at 230 DEG C.
Heterojunction solar battery is obtained, is denoted as A2.
Embodiment 3
Following steps are carried out on the identical battery main body of embodiment 1：
Silver grating line (200, the back side, width are formed by silk-screen printing low temperature silver paste at the positive back side of battery main body
65um, positive noodles number 74, width 65um), then the overlay film copper cash of 25 a diameter of 150um of front parallel arrangement in battery main body
(the MAGNET WIRE of FURUKAWA companies), in 25 a diameter of 150um of back side parallel arrangement of battery main body overlay film copper cash
(the MAGNET WIRE of FURUKAWA companies), the thermal compression welding 3min at 230 DEG C.
Heterojunction solar battery is obtained, is denoted as A3.
Embodiment 4
Following steps are carried out on the identical battery main body of embodiment 1：
Battery main body 50 a diameter of 150um of front parallel arrangement overlay film copper cash (FURUKAWA companies
MAGNET WIRE), in 120 a diameter of 150um of back side parallel arrangement of battery main body overlay film copper cash (FURUKAWA companies
MAGNET WIRE)；The thermal compression welding 3min at 230 DEG C.
Heterojunction solar battery is obtained, is denoted as A4.
Performance test：
By heterojunction solar battery A1 in standard conditions (AM1.5G, 100mW/cm2, 25 DEG C) under J-V curves.Test
As a result Fig. 5 is seen.
From fig. 5, it can be seen that heterojunction solar battery A1 Voc=737mV, FF=79.1%, Jsc=37.8mA/
cm2, Eff=22%.As can be seen here, heterojunction solar battery of the invention has higher performance parameter, further relates to this
The heterojunction solar battery superior performance of invention.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of heterojunction solar battery, it is characterised in that including battery main body and be arranged on the battery main body
Electrode；The electrode includes first electrode and second electrode；The first electrode includes some overlay film copper cash be arrangeding in parallel；
The side welding of the overlay film copper cash is fitted on the side surface of battery main body one；The overlay film copper cash includes copper cash and bag
The organic conductive layers overlayed on outside the copper cash.
2. heterojunction solar battery according to claim 1, it is characterised in that the first electrode also includes being printed on
Some silver grating lines be arrangeding in parallel on the side surface of battery main body one；The silver grating line is staggeredly set with the overlay film copper cash
Put.
3. heterojunction solar battery according to claim 1 or 2, it is characterised in that the organic conductive layers are selected from and led
Electropolymerization nitride layer or conductive organic composition layer.
4. heterojunction solar battery according to claim 1 or 2, it is characterised in that the overlay film copper cash it is a diameter of
80 μm~300 μm.
5. heterojunction solar battery according to claim 1 or 2, it is characterised in that the thickness of the organic conductive layers
For 5 μm~30 μm.
6. heterojunction solar battery according to claim 2, it is characterised in that the first electrode is front electrode,
The bar number of overlay film copper cash is 15~35 in the first electrode.
7. heterojunction solar battery according to claim 1, it is characterised in that the first electrode is front electrode,
The bar number of overlay film copper cash is 45~85 in the first electrode.
8. the preparation method of the heterojunction solar battery described in a kind of claim 1, it is characterised in that comprise the following steps：
Battery main body is provided；
Overlay film copper cash hot pressing is welded on a side surface of the battery main body.
9. the preparation method of heterojunction solar battery according to claim 8, it is characterised in that overlay film copper cash is warm
Pressure welding is before on a side surface of the battery main body, if in addition to the printing formation on a side surface of the battery main body
Dry silver grating line；The silver grating line is staggered with the overlay film copper cash.
10. the preparation method of heterojunction solar battery according to claim 8, it is characterised in that the thermocompression bonding
Welding temperature is 220 DEG C~240 DEG C.
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| WO2022068350A1 (en) * | 2020-09-29 | 2022-04-07 | 东方日升（常州）新能源有限公司 | Heterojunction battery, preparation method therefor, and application thereof |
| CN114497289A (en) * | 2021-02-07 | 2022-05-13 | 福建金石能源有限公司 | Manufacturing method of low-consumption silver heterojunction solar cell |
| WO2023159995A1 (en) * | 2022-02-25 | 2023-08-31 | 通威太阳能（合肥）有限公司 | Heterojunction cell, and photovoltaic module cell string and manufacturing method therefor |
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Application publication date: 20171215 |