CN107391802B - Method for correcting thin film transistor output characteristic model - Google Patents
Method for correcting thin film transistor output characteristic model Download PDFInfo
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- CN107391802B CN107391802B CN201710485895.6A CN201710485895A CN107391802B CN 107391802 B CN107391802 B CN 107391802B CN 201710485895 A CN201710485895 A CN 201710485895A CN 107391802 B CN107391802 B CN 107391802B
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Abstract
The invention particularly relates to a method for correcting an output characteristic model of a thin film transistor, and aims to provide a method for correcting the output characteristic model of the thin film transistor, wherein the same fitting constant is suitable for a plurality of different grid voltages VgsThe output characteristics under the conditions are designed. The invention discloses a method for correcting an output characteristic model of a thin film transistor, which comprises the following steps: set of transistors suitable for thin film transistorsDifferent gate voltages VgsThe same fitting constant α for the output characteristic under the condition, the corrected drain current is determined using the correction formula,
wherein, VdeffIs an effective drain voltage, Vdeff＝VD‑Vdsat，VDIs the drain voltage, VdsatIs a supersaturated voltage; i isdUncorrected drain current in the linear region. The thin film transistor current model of the invention has more accurate prediction on the device characteristics.
Description
Technical Field
The invention belongs to the field of analog integrated circuit design, and particularly relates to a method for correcting an output characteristic model of a thin film transistor.
Background
When the thin film transistor is in operation, if the gate voltage V isgsFixed at drain voltage VDWhen smaller, the drain current increases linearly with increasing drain voltage, when the device is operated in the linear region, as shown in fig. 5. When the drain voltage V isDTo reach saturation voltage VdsatAt this time, the free charge density of the drain of the transistor is 0, and the conductance of the drain is 0, i.e. the current does not follow VDAnd increased by an increase, at which point the device enters the saturation region, as shown in fig. 4. When the drain voltage VDOver saturation voltage VdsatIn the case of a transistor channel, the pinch-off occurs and the length of the channel is shortened, so that the drain current of the device increases slowly with the increase of the drain voltage, as shown in fig. 6, and therefore, when the device operates in the saturation region, the current model suitable for the linear region needs to be corrected.
One existing correction method: the current in the saturation region still follows V directly according to the output characteristicDThe characteristic of approximate linear increase introduces a parameter lambda to correct the current of the original model, namely the current is corrected to be
Wherein Vdeff＝VD-Vdsat，IdI.e. the drain current calculated for the model of the linear region. The method is simpleEasy to implement and only one parameter lambda is introduced.
However, the above method is not perfectly suitable for a variety of VgsOutput characteristic curve under the condition. High V when fitting to experimental data is performedgsThe saturation region drain current is underestimated as shown in fig. 7.
In view of the above-mentioned drawbacks, the present designer has made active research and innovation to create a method for correcting the output characteristic model of the thin film transistor, so that the method has more industrial application value.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a method for correcting an output characteristic model of a thin film transistor, which improves accuracy of correcting a drain current in a saturation region of the thin film transistor on the premise of maintaining a parameter for correcting a current of an original model.
In order to achieve the above object, the present invention provides a method for correcting an output characteristic model of a thin film transistor, wherein when the thin film transistor operates in a saturation region, a drain current is corrected, the method specifically includes:
determining a set of different gate voltages V applicable to a thin film transistorgsThe same fitting constant α for the output characteristic under the condition;
the corrected drain current is determined using the following correction formula,
wherein, VdeffIs an effective drain voltage, Vdeff＝VD-Vdsat，VDIs the drain voltage, VdsatIs a supersaturated voltage;
Idthe current obtained for the uncorrected drain current model adapted to the linear region.
Further, the thin film transistor includes, but is not limited to: amorphous silicon thin film transistor, polycrystalline silicon thin film transistor, amorphous indium gallium zinc oxide thin film transistor, organic matter thin film transistor.
By the scheme, the method for correcting the output characteristic model of the thin film transistor at least has the following advantages:
the invention corrects the saturation region model of the output characteristic of the thin film transistor, only introduces one fitting constant α, namely the same fitting constant is suitable for a group of different grid voltages VgsFitting of output characteristics under conditions. Due to the addition of the gate voltage VgsThe drain current in the saturation region is modified so that it will be for different VgsThe slope of the current increase in the lower saturation region is different. The current model of the thin film transistor can predict the device characteristics more accurately, which is helpful for computer aided design, circuit analysis and device degradation aided research.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 shows the result of the output characteristic fitting of the model modified according to the present invention applied to an amorphous InGaZn oxide thin film transistor;
FIG. 2 is a graph showing the fitting effect of an amorphous InGaZn oxide thin film transistor using a prior art method described in the background;
FIG. 3 shows the result of the output characteristic fitting of the polysilicon TFT with the corrected model applied to the metal-induced lateral crystallization process according to the present invention;
FIG. 4 shows the result of the output characteristic fitting of the polysilicon TFT with the corrected model applied to the excimer laser annealing crystallization process;
FIG. 5 is a plot of the calculated drain current for an unmodified model;
FIG. 6 is an actual device drain current output characteristic;
fig. 7 shows the fitting effect of the method described in the background art, the lines are model calculation data, the symbols are experimental measurement data, and the experimental object is an amorphous indium gallium zinc oxide thin film transistor.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
The invention is verified on various devices, and a good fitting effect is obtained. The following is an embodiment of the method for correcting the output characteristic model of the thin film transistor according to the present invention.
Example 1
As shown in fig. 1, the method for correcting the output characteristic model of the thin film transistor in this embodiment takes an amorphous indium gallium zinc oxide thin film transistor as an example. Setting the grid voltage V of the amorphous InGaZn oxide thin film transistor during operationgsAre each Vgs＝6V、9V、12V、15V；
When the thin film transistor works in a saturation region, correcting the drain current suitable for a linear region, specifically comprising the following steps: the correction formula of the drain current is as follows:
wherein, VdeffIs an effective drain voltage, Vdeff＝VD-Vdsat，VDIs the drain voltage, VdsatIs a supersaturated voltage;
Idthe current obtained for the uncorrected drain current model adapted to the linear region.
Fig. 1 and 2 show the fitting result of applying the corrected model to the amorphous indium gallium zinc oxide thin film transistor. The four output characteristic curves respectively correspond to Vgs 6V, Vgs 9V, Vgs 12V, Vgs 15V from bottom to top.
As can be seen from the comparison between fig. 1 and fig. 2, the fitting effect of the characteristic curve of this embodiment is significantly better than that of the method described in the background art.
Example 2
As shown in FIG. 3, the thin film transistor of this embodiment outputs a signalThe exemplary model correction method is a polysilicon Thin Film Transistor (TFT) with metal induced lateral crystallization process. Setting the grid voltage V of the polysilicon thin film transistor in the metal induced lateral crystallization processgsAre each VgsThis embodiment differs from embodiment 1 in the constant α, 6V, 9V, 12V, 15V.
When the thin film transistor works in a saturation region, correcting the drain current suitable for a linear region, specifically comprising the following steps: the correction formula of the drain current is as follows:
wherein, VdeffIs an effective drain voltage, Vdeff＝VD-Vdsat，VDIs the drain voltage, VdsatIs a supersaturated voltage; i isdThe current obtained for the uncorrected drain current model adapted to the linear region.
Fig. 3 shows the fitting effect of the corrected model applied to the polysilicon thin film transistor of the Metal Induced Lateral Crystallization (MILC) process. The four output characteristic curves respectively correspond to Vgs 6V, Vgs 9V, Vgs 12V, Vgs 15V from bottom to top.
Example 3
As shown in fig. 4, the method for correcting the output characteristic model of the thin film transistor in this embodiment takes a polysilicon thin film transistor of an excimer laser annealing crystallization process as an example. Setting grid voltage V of polysilicon thin film transistor of excimer laser annealing crystallization process during workinggsAre each VgsThis embodiment differs from embodiments 1 and 2 in the constant α, 6V, 9V, 12V, and 15V.
When the thin film transistor works in a saturation region, correcting the drain current suitable for a linear region, specifically comprising the following steps: the correction formula of the drain current is as follows:
wherein, VdeffIs an effective drain voltage, Vdeff＝VD-Vdsat，VDIs the drain voltage, VdsatIs a supersaturated voltage; i isdUncorrected drain current in the linear region.
Fig. 4 shows the fitting effect of the corrected model applied to the polysilicon thin film transistor of the Excimer laser annealing crystallization (ELA) process. The four output characteristic curves respectively correspond to Vgs 6V, Vgs 9V, Vgs 12V, Vgs 15V from bottom to top.
It should be noted that in fig. 3 and 4, V is highDThe underestimation of the drain current of the device by the partial model is not caused by the channel length modulation effect, but is caused by not considering the warping effect (Kink effect), and it can be seen that the modified model has quite good fitting effect on the parts of the three devices without the warping effect.
Similarly, the fitting accuracy of the thin film transistors in embodiments 2 and 3 using the method in the background art is lower than that of the method in the present invention, and details are not repeated here.
The thin film transistor of the present invention includes but is not limited to: amorphous silicon thin film transistor, polycrystalline silicon thin film transistor, amorphous indium gallium zinc oxide thin film transistor, organic matter thin film transistor. Other types of thin film transistors that can be obtained by a person skilled in the art by experimental methods are also suitable for use in the method of the present invention, and therefore all thin film transistors suitable for use in the method of the present invention are within the scope of the present invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (2)
1. A method for correcting an output characteristic model of a Thin Film Transistor (TFT) is characterized in that when the TFT works in a saturation region, a drain current is corrected, and the method specifically comprises the following steps:
determining a set of different gate voltages V for the TFT by fitting the model calculation data to the experimental measurement datagsThe same fitting constant α for the output characteristic under the condition;
the corrected drain current is determined using the following correction formula,
wherein, VdeffIs an effective drain voltage, Vdeff＝VD-Vdsat，VDIs the drain voltage, VdsatIs a supersaturated voltage;
Idthe current obtained for the uncorrected drain current model adapted to the linear region.
2. The thin film transistor output characteristic model correction method according to claim 1, wherein the thin film transistor includes: amorphous silicon thin film transistor, polycrystalline silicon thin film transistor, amorphous indium gallium zinc oxide thin film transistor, organic matter thin film transistor.
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