CN107390763A - A kind of Low Drift Temperature current source circuit insensitive to power supply - Google Patents
A kind of Low Drift Temperature current source circuit insensitive to power supply Download PDFInfo
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- CN107390763A CN107390763A CN201710775470.9A CN201710775470A CN107390763A CN 107390763 A CN107390763 A CN 107390763A CN 201710775470 A CN201710775470 A CN 201710775470A CN 107390763 A CN107390763 A CN 107390763A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The present invention discloses a kind of Low Drift Temperature current source circuit insensitive to power supply so that the second metal-oxide-semiconductor is not under conditions of start-up circuit is needed, all the time in normal operating conditions；And flow through the electric current of second resistance is influenceed smaller by supply voltage, correspondingly, is reduced the influence for the electric current that supply voltage exports to current source circuit, is reduced susceptibility of the current source circuit to power supply；In addition, in the current source course of work, the threshold voltage for being affected by temperature the 3rd larger metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is cancelled out each other, so that the electric current for flowing through 3rd resistor is not influenced by temperature, the influence for the electric current that temperature change exports to the current source circuit is further reduced, reduces the temperature drift coefficient of the current source circuit.
Description
Technical field
The present invention relates to circuit field, more particularly to a kind of Low Drift Temperature current source circuit insensitive to power supply.
Background technology
Current current source circuit is generally current biasing circuit, but at present in design current biasing circuit, for
Reliability of Supply sensitivity, Low Drift Temperature coefficient and circuit etc. considers less, and due to lacking in the design process
Few consideration to above-mentioned several respects, some performances for frequently resulting in current source circuit in use are affected.
In addition, some current biasing circuits in order to provide the current offset of high quality, often also need to design start-up circuit,
But because the presence of start-up circuit, the complexity increase of circuit, the risk started extremely can also increase therewith, correspondingly, electricity
Flowing the reliability of biasing circuit reduces.
The content of the invention
In order to solve above technical problem present in prior art, the invention provides a kind of insensitive to power supply low
Temperature drift current source circuit, it can reduce the susceptibility to power supply on the premise of start-up circuit is not needed, reduce because of temperature change
And influenceed caused by the electric current exported to the current source circuit, improve the reliability of circuit.
The invention provides a kind of Low Drift Temperature current source circuit insensitive to power supply, including：First metal-oxide-semiconductor, the 2nd MOS
Pipe, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, first resistor, second resistance and 3rd resistor；
First metal-oxide-semiconductor is NMOS tube, and the grid of first metal-oxide-semiconductor is grounded by the second resistance, described
The source ground of one metal-oxide-semiconductor, the drain electrode of first metal-oxide-semiconductor connect power supply by the first resistor；
Second metal-oxide-semiconductor is NMOS tube, and the grid of second metal-oxide-semiconductor connects the power supply by the first resistor,
The source electrode of second metal-oxide-semiconductor is grounded by the second resistance, drain electrode and the 3rd metal-oxide-semiconductor of second metal-oxide-semiconductor
Drain electrode is connected；
3rd metal-oxide-semiconductor is PMOS, and the grid of the 3rd metal-oxide-semiconductor is connected with the grid of the 4th metal-oxide-semiconductor, institute
The source electrode for stating the 3rd metal-oxide-semiconductor connects the power supply, and the drain electrode of the 3rd metal-oxide-semiconductor is connected with the grid of the 3rd metal-oxide-semiconductor；
4th metal-oxide-semiconductor is PMOS, and the 4th metal-oxide-semiconductor source electrode connects the power supply by the 3rd resistor, institute
State the electric current of the drain electrode output current source circuit of the 4th metal-oxide-semiconductor.
Optionally, this kind Low Drift Temperature current source circuit insensitive to power supply, the first resistor include：4th resistance and
5th resistance；
4th resistance and the 5th resistant series form the first resistor.
Optionally, this kind Low Drift Temperature current source circuit insensitive to power supply, the second resistance include：6th resistance and
7th resistance；
6th resistance and the 7th resistant series form the second resistance.
Optionally, this kind Low Drift Temperature current source circuit insensitive to power supply, in addition to：5th metal-oxide-semiconductor and the 6th MOS
Pipe；
5th metal-oxide-semiconductor is NMOS tube, and the grid of the 5th metal-oxide-semiconductor connects the drain electrode of the 4th metal-oxide-semiconductor, described
The drain electrode of 5th metal-oxide-semiconductor is connected with the grid of the 5th metal-oxide-semiconductor, the source ground of the 5th metal-oxide-semiconductor；
6th metal-oxide-semiconductor is NMOS tube, and the grid of the 6th metal-oxide-semiconductor is connected to the grid of the 5th metal-oxide-semiconductor, institute
State the source ground of the 6th metal-oxide-semiconductor, the electric current of the drain electrode output current source circuit of the 6th metal-oxide-semiconductor.
Optionally, the Low Drift Temperature current source circuit insensitive to power supply, the breadth length ratio of the 4th metal-oxide-semiconductor is more than described
The breadth length ratio of 3rd metal-oxide-semiconductor.
Present invention also offers the another kind Low Drift Temperature current source circuit insensitive to power supply, including：7th metal-oxide-semiconductor, the
Eight metal-oxide-semiconductors, the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 8th resistance, the 9th resistance and the tenth resistance；
7th metal-oxide-semiconductor is PMOS, and the grid of the 7th metal-oxide-semiconductor connects power supply by the 9th resistance, described
The source electrode of 7th metal-oxide-semiconductor connects the power supply, and the drain electrode of the 7th metal-oxide-semiconductor passes through the 8th resistance eutral grounding；
8th metal-oxide-semiconductor is PMOS, and the grid of the 8th metal-oxide-semiconductor is by the 8th resistance eutral grounding, described
The source electrode of eight metal-oxide-semiconductors connects the power supply, drain electrode and the 9th metal-oxide-semiconductor of the 8th metal-oxide-semiconductor by the 9th resistance
Drain electrode is connected；
9th metal-oxide-semiconductor is NMOS tube, and the grid of the 9th metal-oxide-semiconductor is connected with the grid of the tenth metal-oxide-semiconductor, institute
The source ground of the 9th metal-oxide-semiconductor is stated, the drain electrode of the 9th metal-oxide-semiconductor is connected with the grid of the 9th metal-oxide-semiconductor；
Tenth metal-oxide-semiconductor is NMOS tube, and the source electrode of the tenth metal-oxide-semiconductor is by the tenth resistance eutral grounding, described
The electric current of the drain electrode output current source circuit of ten metal-oxide-semiconductors.
Optionally, this kind Low Drift Temperature current source circuit insensitive to power supply, the 8th resistance include：11st resistance
With the 12nd resistance；
11st resistance and the 12nd resistant series form the 8th resistance.
Optionally, this kind Low Drift Temperature current source circuit insensitive to power supply, the 9th resistance include：13rd resistance
With the 14th resistance；
13rd resistance and the 14th resistant series form the 9th resistance.
Optionally, this kind Low Drift Temperature current source circuit insensitive to power supply, in addition to：11st metal-oxide-semiconductor and the 12nd
Metal-oxide-semiconductor；
11st metal-oxide-semiconductor is PMOS, and the grid of the 11st metal-oxide-semiconductor connects the drain electrode of the tenth metal-oxide-semiconductor,
The source electrode of tenth metal-oxide-semiconductor connects the power supply, and the drain electrode of the tenth metal-oxide-semiconductor is connected with the grid of the tenth metal-oxide-semiconductor；
12nd metal-oxide-semiconductor is PMOS, and the grid of the 12nd metal-oxide-semiconductor is connected to the 11st metal-oxide-semiconductor
Grid, the source electrode of the 12nd metal-oxide-semiconductor are connected to the power supply, the drain electrode output current source circuit of the 12nd metal-oxide-semiconductor
Electric current.
Optionally, this kind Low Drift Temperature current source circuit insensitive to power supply, it is characterised in that the tenth metal-oxide-semiconductor
Breadth length ratio is more than the breadth length ratio of the 9th metal-oxide-semiconductor.
Compared with prior art, the present invention at least has advantages below：
The Low Drift Temperature current source circuit insensitive to power supply provided by the invention so that the second metal-oxide-semiconductor need not start
Under conditions of circuit, all the time in normal operating conditions；And flowing through the electric current of second resistance is influenceed smaller, phase by supply voltage
Ying Di, the influence for the electric current that supply voltage exports to current source circuit is reduced, reduce the current source circuit to the quick of power supply
Sensitivity；In addition, in the current source course of work, the threshold voltage phase of the 3rd larger metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is affected by temperature
Mutually offset, so that the electric current for flowing through 3rd resistor is not influenced by temperature, further reduce temperature change to the electric current
The influence of the electric current of source circuit output, reduce the temperature drift coefficient of the current source circuit.
Brief description of the drawings
, below will be to embodiment or existing in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in application, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of circuit diagram of the Low Drift Temperature current source circuit insensitive to power supply provided by the invention；
Fig. 2 is the circuit diagram of the another kind provided by the invention Low Drift Temperature current source circuit insensitive to power supply；
Fig. 3 is the circuit diagram of another Low Drift Temperature current source circuit insensitive to power supply provided by the invention；
Fig. 4 is the circuit diagram of another Low Drift Temperature current source circuit insensitive to power supply provided by the invention.
Embodiment
In order that those skilled in the art more fully understand the present invention program, below in conjunction with the embodiment of the present invention
Accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only this
Invention part of the embodiment, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art exist
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In the prior art, in design current source circuit, susceptibility, Low Drift Temperature of the current source circuit to power supply are seldom considered
The reliability of coefficient and circuit, and due to lacking the consideration for above-mentioned several respects, often such that the property of current source circuit
It can be affected.In addition, some current source circuits in order to improve the quality of current offset, generally can also design start-up circuit, but
It is due to the presence of start-up circuit, the complexity of circuit can be caused to increase, and therefore the area of chip also can become big, this
Outside, the risk started extremely correspondingly can also increase therewith.
In order to solve above-mentioned the problems of the prior art, the invention provides a kind of Low Drift Temperature electric current insensitive to power supply
Source circuit, the circuit can ensure that current source circuit is in normal operating conditions on the premise of start-up circuit is not needed, and
Ensure the current source output electric current influenceed by supply voltage it is smaller.In addition, the electric current of current source circuit output is not also by temperature
The influence of degree, really realizes Low Drift Temperature.
Embodiment one
Referring to Fig. 1, a kind of circuit diagram of the Low Drift Temperature current source circuit insensitive to power supply provided for the present embodiment.
This kind Low Drift Temperature current source circuit insensitive to power supply includes：Including：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2,
3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, first resistor R1, second resistance R2 and 3rd resistor R3.
First metal-oxide-semiconductor M1 is NMOS tube, and the first metal-oxide-semiconductor M1 grid is grounded by second resistance R2, the first metal-oxide-semiconductor M1's
Source ground, the first metal-oxide-semiconductor M1 drain electrode meet power supply VCC by first resistor R1.
Second metal-oxide-semiconductor M2 is NMOS tube, and the second metal-oxide-semiconductor M2 grid meets power supply VCC, the 2nd MOS by first resistor R1
Pipe M2 source electrode is grounded by second resistance R2, and the second metal-oxide-semiconductor M2 drain electrode is connected with the 3rd metal-oxide-semiconductor M3 drain electrode.
3rd metal-oxide-semiconductor M3 is PMOS, and the 3rd metal-oxide-semiconductor M3 grid is connected with the 4th metal-oxide-semiconductor M4 grid, the 3rd MOS
The drain electrode that pipe M3 source electrode meets power supply VCC, the 3rd metal-oxide-semiconductor M3 is connected with the 3rd metal-oxide-semiconductor M3 grid.
4th metal-oxide-semiconductor M4 is PMOS, and the 4th metal-oxide-semiconductor M4 source electrodes connect power supply VCC, the 4th metal-oxide-semiconductor by 3rd resistor R3
The electric current Iout of M4 drain electrode output current source circuit.
As shown in figure 1, first resistor R1 and the first metal-oxide-semiconductor M1 composition paths, the path is commonsource amplifier structure, is
Second metal-oxide-semiconductor M2 provides bias voltage.Also, the electric current on the path be made up of first resistor R1 and the first metal-oxide-semiconductor M1 is by
One resistance R1 resistance decision, specifically, the electric current on the branch road
Voltage difference by first resistor R1, the second metal-oxide-semiconductor M2 and second resistance R2 the path both ends formed is supply voltage
VCC, the presence of the pressure difference ensure that to be existed on the path being made up of first resistor R1, the second metal-oxide-semiconductor M2 and second resistance R2
Electric current, and electric current on the path be present, it is in the conduction state to also demonstrate the second metal-oxide-semiconductor M2, needs V if M2 is turned onGS(M2)
≠0。
And current source circuit of the prior art works as VGS(M2)Corresponding when=0 is abnormal state.Therefore, set and start
The purpose of circuit is exactly in order that VGS(M2)≠ 0, and then avoid current source circuit from entering abnormal working position.
And the current source circuit that the application provides can ensure that the second metal-oxide-semiconductor M2 can be under conditions of no start-up circuit
VGS(M2)≠ 0, that is, ensure that the second metal-oxide-semiconductor M2 is in normally state.
Flow through second resistance R2 electric current by the voltage between the first metal-oxide-semiconductor M1 grids and source electrode and second resistance R2 from
The resistance decision of body, i.e.,Wherein, the voltage between the first metal-oxide-semiconductor M1 grids and source electrode is the first metal-oxide-semiconductor M1's
Threshold voltage Vth(M1)With the first metal-oxide-semiconductor M1 overdrive voltage Vov(M1)Sum, i.e. VGS(M1)=Vth(M1)+Vov(M1), thereforeWherein, the first metal-oxide-semiconductor M1 overdrive voltage Vov(M1)Influenceed by supply voltage VCC it is bigger,
But first metal-oxide-semiconductor M1 overdrive voltage Vov(M1)Much smaller than the threshold voltage V of the first metal-oxide-semiconductorth(M1), i.e. Vov(M1)Account for
VGS(M1)Ratio it is smaller, overdrive voltage Vov(M1)With threshold voltage Vth(M1)Compared to even can be ignored, even if
VCC influences Vov(M1), but for VGS(M1)Influence it is also little.That is
By above-mentioned analysis, second resistance R2 electric current is flowed through by the first metal-oxide-semiconductor M1 threshold voltage Vth(M1)Certainly
It is fixed, and threshold voltage Vth(M1)Substantially do not influenceed by supply voltage VCC, therefore, when supply voltage VCC changes, flow through
Two resistance R2 electric current hardly changes.
And the electric current for flowing through second resistance R2 has a very big impact to the electric current Iout that the current source circuit exports, because
This, when the supply voltage VCC of the current source circuit changes, because the electric current for flowing through second resistance R2 substantially will not be because of power supply electricity
Pressure changes and is affected, correspondingly, the electric current Iout of current source circuit output because supply voltage changes by being influenceed
Reduce, that is, reduce susceptibility of the current source circuit to power supply.
In addition, 3rd resistor R3 electric current is flowed through, by the voltage and the 4th MOS between the 3rd metal-oxide-semiconductor M3 grids and source electrode
The resistance decision of voltage difference and R3 between pipe M4 grids and source electrode, i.e.,Wherein, the 3rd
Voltage between metal-oxide-semiconductor M3 grids and source electrode is the threshold voltage V of the metal-oxide-semiconductorth(M3)With overdrive voltage Vov(M3)Sum, i.e.,
VGS(M3)=Vth(M3)+Vov(M3), voltage between the 4th metal-oxide-semiconductor M4 grids and source electrode is the 4th metal-oxide-semiconductor M4 threshold voltage
Vth(M4)With the overdrive voltage V of the 4th metal-oxide-semiconductorov(M4)Sum, i.e. VGS(M4)=Vth(M4)+Vov(M4)。
Due to the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 is PMOS and model is identical, therefore, the 3rd metal-oxide-semiconductor M3 threshold
Threshold voltage Vth(M3)With the threshold voltage V of the 4th metal-oxide-semiconductorth(M4)It is of substantially equal, in the electric current on calculating 3rd resistor R3, the 3rd
The voltage between voltage and the 4th metal-oxide-semiconductor grid and source electrode between metal-oxide-semiconductor M3 grids and source electrode makes the difference, correspondingly, the 3rd MOS
Pipe M3 threshold voltage Vth(M3)With the 4th metal-oxide-semiconductor M4 threshold voltage Vth(M4)Subtract each other, due to the 3rd metal-oxide-semiconductor M3 threshold voltage
Of substantially equal with the 4th metal-oxide-semiconductor M4 threshold voltage, therefore, during subtracting each other, the two is cancelled out each other, i.e.,
When environment temperature changes, the threshold voltage of MOS device can change therewith, the electricity that the present embodiment provides
Current source circuit, calculate 3rd resistor R3 on electric current during, be affected by temperature larger the 3rd metal-oxide-semiconductor M3 and the 4th
Metal-oxide-semiconductor M4 threshold voltage is cancelled out each other, that is to say, that because two factors for being affected by temperature larger are cancelled out each other, therefore is flowed
Electric current through 3rd resistor R3 will not produce change because environment temperature changes.And 3rd resistor R3 electric current is flowed through to the electric current
The electric current Iout of source circuit output has large effect, correspondingly, when flowing through 3rd resistor R3 electric current not with environment temperature
When changing and changing, the electric current Iout of current source circuit output is affected by the ambient temperature also to be reduced, that is, reduces the electricity
The temperature drift coefficient of current source circuit.
It should be noted that first resistor R1 can be made up of two resistant series, naturally it is also possible to according to being actually needed,
It is made up of multiple resistant series or parallel connection, does not do any restriction herein.
Similarly, second resistance R2 can also be made up of two resistant series, naturally it is also possible to according to being actually needed, by multiple
Resistant series or composition in parallel, do not do any restriction herein.
It should be noted that in order to ensure that the current value for flowing through 3rd resistor R3 is not zero, the 3rd metal-oxide-semiconductor M3 grid are should ensure that
Voltage between pole and source electrode is more than the electricity of overdriving of voltage, i.e. the 3rd metal-oxide-semiconductor M3 between the 4th metal-oxide-semiconductor M4 grids and source electrode
Press Vov(M3)More than the 4th metal-oxide-semiconductor M4 overdrive voltage Vov(M4), therefore choosing the 3rd metal-oxide-semiconductor M3's and the 4th metal-oxide-semiconductor M4
During, it should ensure that the 4th metal-oxide-semiconductor M4 of selection breadth length ratio is more than the 3rd metal-oxide-semiconductor M3 breadth length ratio.
In order to further be easy to provide the electric current of the opposite current source circuit of outbound course, the present embodiment provide to power supply
Insensitive Low Drift Temperature current source circuit, image current source circuit can also be further set at electric current output, such as Fig. 2 institutes
Show.
The image current source circuit includes：5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6.
5th metal-oxide-semiconductor M5 is NMOS tube, and the 5th metal-oxide-semiconductor M5 grid connects the 4th metal-oxide-semiconductor M4 drain electrode, the 5th metal-oxide-semiconductor
M5 drain electrode is connected with the 5th metal-oxide-semiconductor M5 grid, the 5th metal-oxide-semiconductor M5 source ground.
6th metal-oxide-semiconductor M6 is NMOS tube, and the 6th metal-oxide-semiconductor M6 grid is connected to the 5th metal-oxide-semiconductor M5 grid, the 6th MOS
Pipe M6 source ground, the electric current of the 6th metal-oxide-semiconductor M6 drain electrode output current source circuit.
5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6 constitute an image current source circuit, pass through mirror current source electricity
Road, the electric current of the current source circuit of drain electrode output of the needs by the 4th metal-oxide-semiconductor M4 can be caused, directly by the 6th metal-oxide-semiconductor M6's
Drain electrode output.
The Low Drift Temperature current source circuit insensitive to power supply that the present embodiment provides so that the second metal-oxide-semiconductor need not open
Under conditions of dynamic circuit, all the time in normal operating conditions；And flow through second resistance R2 electric current by supply voltage influenceed compared with
It is small, correspondingly, the influence for the electric current that supply voltage exports to current source circuit is reduced, reduce the current source circuit to power supply
Susceptibility；In addition, in the current source course of work, the threshold value electricity of the 3rd larger metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is affected by temperature
Pressure is cancelled out each other, so that the electric current for flowing through 3rd resistor is not influenced by temperature, further reduces temperature change to this
The influence of the electric current of current source circuit output, reduce the temperature drift coefficient of the current source circuit.
The current source circuit M1 and M2 that above example provides be NMOS tube, and M3 and M4 are Jie for being carried out exemplified by PMOS
Continue, it is to be understood that M1 and M2 can be PMOS, and NMOS tube and PMOS are exchanged and introduce another electricity by example below
Current source circuit.
Embodiment two
Referring to Fig. 3, the circuit diagram of another the Low Drift Temperature current source circuit insensitive to power supply provided for the present embodiment.
This kind Low Drift Temperature current source circuit insensitive to power supply includes：Including：7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8,
9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 8th resistance R8, the 9th resistance R9 and the tenth resistance R10.
7th metal-oxide-semiconductor M7 is PMOS, and the 7th metal-oxide-semiconductor M7 grid meets power supply VCC, the 7th MOS by the 9th resistance R9
Pipe M7 source electrode meets power supply VCC, and the 7th metal-oxide-semiconductor M7 drain electrode is grounded by the 8th resistance R8.
8th metal-oxide-semiconductor M8 is PMOS, and the 8th metal-oxide-semiconductor M8 grid is grounded by the 8th resistance R8, the 8th metal-oxide-semiconductor M8's
Source electrode meets power supply VCC by the 9th resistance R9, and the 8th metal-oxide-semiconductor M8 drain electrode is connected with the 9th metal-oxide-semiconductor M9 drain electrode.
9th metal-oxide-semiconductor M9 is NMOS tube, and the 9th metal-oxide-semiconductor M9 grid is connected with the tenth metal-oxide-semiconductor M10 grid, the 9th MOS
Pipe M9 source ground, the 9th metal-oxide-semiconductor M9 drain electrode are connected with the 9th metal-oxide-semiconductor M9 grid.
Tenth metal-oxide-semiconductor M10 is NMOS tube, and the tenth metal-oxide-semiconductor M10 source electrode is grounded by the tenth resistance R10, the tenth metal-oxide-semiconductor
The electric current of M10 drain electrode output current source circuit.
Voltage difference by the 8th resistance R8, the 8th metal-oxide-semiconductor M8 and the 9th resistance R9 the path both ends formed is supply voltage
VCC, the presence of the voltage difference ensure that electric current on the path be present, and the path has electric current, it may also be said to bright 8th MOS
State of the pipe in normally, that is, ensure that VGS(M8)≠0.Therefore, the current source circuit that the present embodiment provides can cause the
Eight metal-oxide-semiconductor M8 ensure normally, that is, only relying on the current source circuit itself can ensure under conditions of no start-up circuit
VGS(M8)≠ 0 so that the 8th metal-oxide-semiconductor M8 is in normally state.
The 9th resistance R9 electric current is flowed through, is determined by the voltage between the 7th metal-oxide-semiconductor M7 grids and source electrode, i.e.,Wherein, the voltage between the 7th metal-oxide-semiconductor M7 grids and source electrode is the 7th metal-oxide-semiconductor M7 threshold voltage Vth(M7)
With the 7th metal-oxide-semiconductor M7 overdrive voltage Vov(M7)Sum, i.e. VGS(M7)=Vth(M7)+Vov(M7).ThereforeWherein, the 7th metal-oxide-semiconductor M7 overdrive voltage Vov(M7)Influenceed by supply voltage VCC it is bigger,
But the 7th metal-oxide-semiconductor M7 overdrive voltage Vov(M7)Much smaller than the threshold voltage V of the 7th metal-oxide-semiconductorth(M7), i.e. Vov(M7)Account for
VGS(M7)Ratio it is smaller, overdrive voltage Vov(M7)With the 7th metal-oxide-semiconductor M7 threshold voltage Vth(M7)Compared to even can ignore
Disregard, even if VCC influences Vov(M7), but for VGS(M7)Influence also and less, i.e.,
By above-mentioned analysis, the 9th resistance R9 electric current is flowed through by the 7th metal-oxide-semiconductor M7 threshold voltage Vth(M7)Certainly
It is fixed, and threshold voltage Vth(M7)Do not influenceed by supply voltage VCC, i.e., when supply voltage VCC changes, flow through the 9th resistance
R9 electric current will not change substantially.
And the electric current for flowing through the 9th resistance R9 has a very big impact to the electric current Iout that the current source circuit exports, because
This, when the supply voltage of the current source circuit changes, due to flowing through the 9th resistance R9 electric current substantially not by supply voltage shadow
Ring, correspondingly, the current source circuit output electric current Iout because supply voltage change by influenceed reduce, that is, reduce this
Susceptibility of the current source circuit to power supply.
In addition, the tenth resistance R10 electric current is flowed through, by the voltage and the tenth MOS between the 9th metal-oxide-semiconductor M9 grids and source electrode
Voltage difference decision between pipe M10 grids and source electrode, i.e.,Wherein, the 9th metal-oxide-semiconductor M9 grids
Voltage between source electrode is the threshold voltage V of the metal-oxide-semiconductorth(M9)With overdrive voltage Vov(M9)Sum, i.e. VGS(M9)=Vth(M9)+
Vov(M9), the voltage between the tenth metal-oxide-semiconductor M10 grids and source electrode is the threshold voltage V of the metal-oxide-semiconductorth(M10)And overdrive voltage
Vov(M10)Sum, i.e. VGS(M10)=Vth(M10)+Vov(M10)。
Because the 9th metal-oxide-semiconductor M9 and the tenth metal-oxide-semiconductor M10 are NMOS tube, and the model of two metal-oxide-semiconductors is identical, therefore, the
Nine metal-oxide-semiconductor M9 threshold voltage Vth(M9)With the tenth metal-oxide-semiconductor M10 threshold voltage Vth(M10)It is of substantially equal, calculating the tenth resistance
During electric current on R10, the electricity between voltage and the tenth metal-oxide-semiconductor M10 grids and source electrode between the 9th metal-oxide-semiconductor M9 grids and source electrode
Pressure makes the difference, correspondingly, the 9th metal-oxide-semiconductor M9 threshold voltage Vth(M9)With the tenth metal-oxide-semiconductor Vth(M10)Subtract each other, due to the 9th metal-oxide-semiconductor M9
Threshold voltage and the tenth metal-oxide-semiconductor M10 threshold voltage it is of substantially equal, therefore, during subtracting each other, the two is cancelled out each other,
I.e.
When environment temperature changes, the threshold voltage of MOS device can change therewith, the electricity that the present embodiment provides
Current source circuit, calculate the tenth resistance R10 on electric current during, be affected by temperature larger the 9th metal-oxide-semiconductor M9 and the tenth
Metal-oxide-semiconductor M10 threshold voltage is cancelled out each other, i.e., this is affected by temperature larger factor and canceled each other out, and therefore, flows through the tenth electricity
Change can't be produced because environment temperature changes by hindering R10 electric current.And the tenth resistance R10 electric current is flowed through to current source electricity
The electric current Iout of road output has large effect, correspondingly, when the electric current for flowing through the tenth resistance R10 does not change with environment temperature
And when changing, the electric current Iout of current source circuit output is affected by the ambient temperature also to be reduced, that is, reduces the current source
The temperature drift coefficient of circuit.
It should be noted that the 8th resistance R8 can be made up of two resistant series, naturally it is also possible to according to being actually needed,
It is made up of multiple resistant series or parallel connection, does not do any restriction herein.
Similarly, the 9th resistance R9 can also be made up of two resistant series, naturally it is also possible to according to being actually needed, by multiple
Resistant series or composition in parallel, do not do any restriction herein.
It should be noted that in order to ensure that the current value for flowing through the tenth resistance R10 is not zero, the 9th metal-oxide-semiconductor M9 should ensure that
Grid and source electrode between voltage be more than voltage between the tenth metal-oxide-semiconductor M10 grids and source electrode, i.e. crossing for the 9th metal-oxide-semiconductor M9 is driven
Dynamic voltage Vov(M9)More than the tenth metal-oxide-semiconductor M10 overdrive voltage Vth(M10), therefore choosing the 9th metal-oxide-semiconductor and the tenth metal-oxide-semiconductor
During, it should ensure that the tenth metal-oxide-semiconductor M10 of selection breadth length ratio is more than the 9th metal-oxide-semiconductor M9 breadth length ratio.
In order to further be easy to the electric current of the opposite current source circuit of outbound course, the present embodiment provides unwise to power supply
The Low Drift Temperature current source circuit of sense, image current source circuit can also be further set at electric current output, as shown in Figure 4.
The image current source circuit includes：11st metal-oxide-semiconductor M11 and the 12nd metal-oxide-semiconductor M12.
11st metal-oxide-semiconductor M11 is PMOS, and the 11st metal-oxide-semiconductor M11 grid connects the tenth metal-oxide-semiconductor M10 drain electrode, the
The drain electrode that ten metal-oxide-semiconductor M10 source electrode meets power supply VCC, the tenth metal-oxide-semiconductor M10 is connected with the tenth metal-oxide-semiconductor M10 grid
12nd metal-oxide-semiconductor M12 is PMOS, and the 12nd metal-oxide-semiconductor M12 grid is connected to the 11st metal-oxide-semiconductor M11 grid
Pole, the 12nd metal-oxide-semiconductor M12 source electrode are connected to power supply VCC, the electricity of the 12nd metal-oxide-semiconductor M12 drain electrode output current source circuit
Stream.
11st metal-oxide-semiconductor M11 and the 12nd metal-oxide-semiconductor M12 constitute an image current source circuit, pass through the image current
Source circuit, the electric current of the current source circuit of drain electrode output of the needs by the tenth metal-oxide-semiconductor M10 can be caused, directly by the 12nd MOS
Pipe M12 drain electrode output.
The Low Drift Temperature current source circuit insensitive to power supply that the present embodiment provides so that the 8th metal-oxide-semiconductor need not open
Under conditions of dynamic circuit, all the time in normal operating conditions；And flow through the 9th resistance R9 electric current by supply voltage influenceed compared with
It is small, correspondingly, the influence for the electric current that supply voltage exports to current source circuit is reduced, reduce current source circuit to power supply
Susceptibility；In addition, in the current source course of work, the threshold voltage of the 9th larger metal-oxide-semiconductor and the tenth metal-oxide-semiconductor is affected by temperature
Cancel out each other, so that the electric current for flowing through the tenth resistance is not influenced by temperature, further reduce temperature change to the electricity
The influence of the electric current of current source circuit output, reduce the temperature drift coefficient of the current source circuit.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention.Though
So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention.It is any to be familiar with those skilled in the art
Member, without departing from the scope of the technical proposal of the invention, all using the methods and technical content of the disclosure above to the present invention
Technical scheme makes many possible changes and modifications, or is revised as the equivalent embodiment of equivalent variations.Therefore, it is every without departing from
The content of technical solution of the present invention, the technical spirit according to the present invention is to any simple modification made for any of the above embodiments, equivalent
Change and modification, still fall within technical solution of the present invention protection in the range of.
Claims (10)
- A kind of 1. Low Drift Temperature current source circuit insensitive to power supply, it is characterised in that including：First metal-oxide-semiconductor, the second metal-oxide-semiconductor, 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, first resistor, second resistance and 3rd resistor；First metal-oxide-semiconductor is NMOS tube, and the grid of first metal-oxide-semiconductor is grounded by the second resistance, the first MOS The source ground of pipe, the drain electrode of first metal-oxide-semiconductor connect power supply by the first resistor；Second metal-oxide-semiconductor is NMOS tube, and the grid of second metal-oxide-semiconductor connects the power supply by the first resistor, described The source electrode of second metal-oxide-semiconductor is grounded by the second resistance, the drain electrode and the drain electrode of the 3rd metal-oxide-semiconductor of second metal-oxide-semiconductor It is connected；3rd metal-oxide-semiconductor is PMOS, and the grid of the 3rd metal-oxide-semiconductor is connected with the grid of the 4th metal-oxide-semiconductor, described The source electrode of three metal-oxide-semiconductors connects the power supply, and the drain electrode of the 3rd metal-oxide-semiconductor is connected with the grid of the 3rd metal-oxide-semiconductor；4th metal-oxide-semiconductor is PMOS, and the 4th metal-oxide-semiconductor source electrode connects the power supply by the 3rd resistor, described The electric current of the drain electrode output current source circuit of four metal-oxide-semiconductors.
- 2. the Low Drift Temperature current source circuit insensitive to power supply according to claim 1, it is characterised in that first electricity Resistance includes：4th resistance and the 5th resistance；4th resistance and the 5th resistant series form the first resistor.
- 3. the Low Drift Temperature current source circuit insensitive to power supply according to claim 1, it is characterised in that second electricity Resistance includes：6th resistance and the 7th resistance；6th resistance and the 7th resistant series form the second resistance.
- 4. the Low Drift Temperature current source circuit insensitive to power supply according to claim 1, it is characterised in that also include：The Five metal-oxide-semiconductors and the 6th metal-oxide-semiconductor；5th metal-oxide-semiconductor is NMOS tube, the drain electrode of grid connection the 4th metal-oxide-semiconductor of the 5th metal-oxide-semiconductor, the described 5th The drain electrode of metal-oxide-semiconductor is connected with the grid of the 5th metal-oxide-semiconductor, the source ground of the 5th metal-oxide-semiconductor；6th metal-oxide-semiconductor is NMOS tube, and the grid of the 6th metal-oxide-semiconductor is connected to the grid of the 5th metal-oxide-semiconductor, described The source ground of six metal-oxide-semiconductors, the electric current of the drain electrode output current source circuit of the 6th metal-oxide-semiconductor.
- 5. the Low Drift Temperature current source circuit insensitive to power supply according to claim 1, it is characterised in that the described 4th The breadth length ratio of metal-oxide-semiconductor is more than the breadth length ratio of the 3rd metal-oxide-semiconductor.
- A kind of 6. Low Drift Temperature current source circuit insensitive to power supply, it is characterised in that including：7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 8th resistance, the 9th resistance and the tenth resistance；7th metal-oxide-semiconductor is PMOS, and the grid of the 7th metal-oxide-semiconductor connects power supply by the 9th resistance, the described 7th The source electrode of metal-oxide-semiconductor connects the power supply, and the drain electrode of the 7th metal-oxide-semiconductor passes through the 8th resistance eutral grounding；8th metal-oxide-semiconductor is PMOS, and the grid of the 8th metal-oxide-semiconductor passes through the 8th resistance eutral grounding, the 8th MOS The source electrode of pipe connects the power supply, the drain electrode of the 8th metal-oxide-semiconductor and the drain electrode phase of the 9th metal-oxide-semiconductor by the 9th resistance Even；9th metal-oxide-semiconductor is NMOS tube, and the grid of the 9th metal-oxide-semiconductor is connected with the grid of the tenth metal-oxide-semiconductor, described The source ground of nine metal-oxide-semiconductors, the drain electrode of the 9th metal-oxide-semiconductor are connected with the grid of the 9th metal-oxide-semiconductor；Tenth metal-oxide-semiconductor is NMOS tube, and the source electrode of the tenth metal-oxide-semiconductor passes through the tenth resistance eutral grounding, the tenth MOS The electric current of the drain electrode output current source circuit of pipe.
- 7. the Low Drift Temperature current source circuit insensitive to power supply according to claim 6, it is characterised in that the 8th electricity Resistance includes：11st resistance and the 12nd resistance；11st resistance and the 12nd resistant series form the 8th resistance.
- 8. the Low Drift Temperature current source circuit insensitive to power supply according to claim 6, it is characterised in that the 9th electricity Resistance includes：13rd resistance and the 14th resistance；13rd resistance and the 14th resistant series form the 9th resistance.
- 9. the Low Drift Temperature current source circuit insensitive to power supply according to claim 6, it is characterised in that also include：The 11 metal-oxide-semiconductors and the 12nd metal-oxide-semiconductor；11st metal-oxide-semiconductor is PMOS, and the grid of the 11st metal-oxide-semiconductor connects the drain electrode of the tenth metal-oxide-semiconductor, described The source electrode of tenth metal-oxide-semiconductor connects the power supply, and the drain electrode of the tenth metal-oxide-semiconductor is connected with the grid of the tenth metal-oxide-semiconductor；12nd metal-oxide-semiconductor is PMOS, and the grid of the 12nd metal-oxide-semiconductor is connected to the grid of the 11st metal-oxide-semiconductor, The source electrode of 12nd metal-oxide-semiconductor is connected to the power supply, the electricity of the drain electrode output current source circuit of the 12nd metal-oxide-semiconductor Stream.
- 10. the Low Drift Temperature current source circuit insensitive to power supply according to claim 6, it is characterised in that the described tenth The breadth length ratio of metal-oxide-semiconductor is more than the breadth length ratio of the 9th metal-oxide-semiconductor.
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| CN201710775470.9A CN107390763A (en) | 2017-08-31 | 2017-08-31 | A kind of Low Drift Temperature current source circuit insensitive to power supply |
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| CN201710775470.9A CN107390763A (en) | 2017-08-31 | 2017-08-31 | A kind of Low Drift Temperature current source circuit insensitive to power supply |
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| CN201710775470.9A Pending CN107390763A (en) | 2017-08-31 | 2017-08-31 | A kind of Low Drift Temperature current source circuit insensitive to power supply |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111506143A (en) * | 2020-04-02 | 2020-08-07 | 上海华虹宏力半导体制造有限公司 | Current source circuit |
| WO2021218160A1 (en) * | 2020-04-29 | 2021-11-04 | 无锡华润上华科技有限公司 | Bias current generation circuit and flash memory |
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| KR20040084176A (en) * | 2003-03-27 | 2004-10-06 | 엘지전자 주식회사 | Current reference circuit |
| CN1811656A (en) * | 2006-01-16 | 2006-08-02 | 电子科技大学 | Negative temperature compensating current generating circuit and temperature compensating current reference source |
| CN102520756A (en) * | 2011-12-28 | 2012-06-27 | 南京邮电大学 | Bias current generating circuit |
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| KR20000020853A (en) * | 1998-09-24 | 2000-04-15 | 김덕중 | Circuit for generating bias current stabilized from temperature variation |
| KR20040084176A (en) * | 2003-03-27 | 2004-10-06 | 엘지전자 주식회사 | Current reference circuit |
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| CN111506143A (en) * | 2020-04-02 | 2020-08-07 | 上海华虹宏力半导体制造有限公司 | Current source circuit |
| CN111506143B (en) * | 2020-04-02 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | Current source circuit |
| WO2021218160A1 (en) * | 2020-04-29 | 2021-11-04 | 无锡华润上华科技有限公司 | Bias current generation circuit and flash memory |
| US12130649B2 (en) | 2020-04-29 | 2024-10-29 | Csmc Technologies Fab2 Co., Ltd. | Bias current generation circuit and flash memory |
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