CN107359861B - High-order odd harmonic THz source frequency multiplier - Google Patents
High-order odd harmonic THz source frequency multiplier Download PDFInfo
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Abstract
The invention discloses a high-order odd harmonic THz source frequency multiplier, and aims to provide a frequency multiplier which is simple in structure, high in efficiency and capable of effectively providing terahertz signals. The invention is realized by the following technical scheme: external radio frequency signals are input through a standard rectangular waveguide (1), enter a local oscillator low-pass filter (3) through an input waveguide-microstrip transition structure (2), and then enter a Schottky diode. At the same time, the Schottky diode is excited by direct current feed of an electric fundamental wave low-pass filter (4). The schottky diode carries out frequency conversion on an input fundamental wave to generate higher harmonic wave which comprises odd harmonic wave components and even harmonic wave components, finally the higher harmonic wave components enter an output waveguide (7) through an output microstrip-waveguide transition structure (6), the waveguide is reduced, a high-pass filter for filtering even harmonic wave is formed, and the output is carried out through a standard rectangular waveguide. The invention solves the difficult problem of realizing the terahertz signal source.
Description
Technical Field
The invention relates to a terahertz frequency band odd-order solid-state frequency multiplier which can be widely applied to the fields closely related to social development, such as broadband communication, radar, medical imaging, object imaging, nondestructive detection, astronomy, environmental monitoring, safety inspection, anti-terrorism detection, near space communication/satellite communication, radar detection and the like.
Background
The terahertz frequency band has rich resources, the position of the frequency band is just between the microwave millimeter wave and the infrared optics which are relatively good in scientific and technical development, and the terahertz frequency band has the advantages of large communication capacity, small system volume, good confidentiality and the like. The terahertz communication technology can meet the requirements of ground short-distance large-capacity communication, and can also be used for space communication, signal detection and other aspects. In terahertz wave communication technology application, a high-quality and stable and reliable terahertz source plays a crucial role. The solid-state microwave millimeter wave frequency multiplier is a key component in a modern electronic system, and the performance of the solid-state microwave millimeter wave frequency multiplier is related to the performance of the solid-state front end of the whole terahertz system in a radio frequency system or a microwave millimeter wave system. Terahertz wave THz wave means electromagnetic wave with frequency in the range of 0.1-10 THz and wavelength in the range of 3000-30 μm. It coincides with millimeter wave (sub-millimeter wave) in long wave band and with infrared ray in short wave band, electromagnetic wave in the electromagnetic radiation region between millimeter wave and infrared ray. The terahertz frequency band frequency multiplier and the mixer are key circuits of the receiving and transmitting front end of the terahertz system, and the performance of the terahertz frequency band frequency multiplier and the mixer determines the performance of the terahertz system.
The terahertz technology is the problem of the terahertz source to be solved first, and the development of the terahertz technology is related. How to develop a convenient and efficient terahertz source has become the primary task of the scientific workers in the international terahertz field. In millimeter wave and sub-millimeter wave ranges, a semiconductor device frequency doubling method is generally adopted to obtain a solid source. Because of the lack of a stable and reliable terahertz signal source, the development of terahertz technology is greatly limited, so that research and development of a novel terahertz frequency multiplier with high performance have very positive and important significance. In terms of the research situation of the current terahertz technology in China, the lack of a frequency multiplier with high power, low cost and portability to obtain the terahertz signal source is the most important factor for limiting the application of the terahertz wave technology. Therefore, the development of the terahertz wave frequency multiplier with high power and low manufacturing cost plays a vital role in the development of the terahertz wave technology. Under the traction of application requirements, a plurality of topic groups have developed research on realizing THz sources by adopting millimeter wave solid-state circuit frequency multiplication abroad. The technology mainly utilizes microwave and millimeter wave oscillators with lower frequency and a Schottky diode frequency multiplication method to obtain the THz source, which is also a main method for obtaining the THz source at home and abroad at present. The current mode for obtaining the terahertz signal source mainly comprises the following steps: firstly, utilizing devices such as an avalanche transistor, a Gunn transistor, a backward wave transistor oscillator and the like to directly oscillate to generate continuous wave output power; and secondly, a frequency multiplication mode is utilized to obtain a higher frequency signal. The former method can obtain extremely large output power, but is bulky, short-lived, unstable in performance, and requires a very high supply voltage, which limits its application. The latter method can select the output frequency on the N harmonic of the input frequency, so that the required input signal source can be selected to be manufactured in a mature frequency band, thereby providing conditions for ensuring the required frequency stability and phase noise characteristics.
In the intermediate stage of electronic equipment such as a radio transmitter, it is often necessary to increase the frequency of an output signal by an integer multiple of the frequency of an input signal by a frequency multiplier, so that not only the operating frequency is increased, but also the frequency offset can be enlarged in a frequency modulation system. The primary function of the frequency multiplier is to multiply the frequency of the reference source to a higher frequency, which is generally easier and more convenient than directly generating these frequencies, and does not require multiple frequency sources. The oscillation frequency of the crystal oscillator can only reach 200-300 MHz at most, and the frequency multiplication is carried out for multiple times by the frequency multiplier to generate a microwave signal with higher frequency. Frequency multipliers can be classified into a class-c frequency multiplier and a class-d parametric frequency multiplier according to the working principle. The class-III frequency multiplier utilizes the nonlinear resistance effect of a transistor, and based on the working principle of the class-III amplifier, a frequency selection loop is used for selecting a certain harmonic of an input sine wave, so that the frequency multiplication function is realized. When the transistor works in a nonlinear region, a broken line analysis method is a more convenient engineering calculation method, but when the frequency enters an intermediate frequency region and a high frequency region, the actual value and the calculated value can be greatly different due to the internal physical process of the transistor, and the difficulty in learning and applying a transistor circuit is often encountered. The frequency doubler can be divided into a low-order frequency doubler and a high-order frequency doubler according to the frequency multiplication frequency, and can be divided into a nonlinear resistor frequency doubler and a nonlinear reactance frequency doubler according to the working principle. Currently, the conventional frequency multiplier implementation methods mainly include two types, namely a frequency multiplier implemented by using the nonlinearity of a PN junction or a metal-semiconductor junction capacitor, such as a varactor Guan Beipin device and a step recovery diode frequency multiplier, and a frequency multiplier implemented by using the nonlinearity inductance, such as a frequency multiplier implemented by using the nonlinearity inductance caused by avalanche diode avalanche transition effect. The two methods have the defects that the circuit structure is complex, the size is large, an input and output matching circuit, a resonant circuit and a bias circuit are needed, and meanwhile, the debugging difficulty is high, because the step recovery diode is a highly nonlinear element, self-excitation and oscillation are easy to generate, and the avalanche diode is easy to generate avalanche oscillation, so that the design period of the frequency multiplier is long and the debugging difficulty is high.
In the fields of modern communication, radar, remote control and telemetry and the like, the working frequency band is continuously expanded to higher frequency, and higher requirements are put forward on the frequency stability of a microwave solid-state source and a frequency synthesizer. Because of the limitation of the technology and the technological level of the microwave active device, the microwave active device is directly utilized to design and generate a high-frequency signal source, so that the cost is high, and the technology is not easy to realize. The scheme for realizing frequency multiplication is many, and currently, a single-diode Guan Beipin device, a single-balance frequency multiplier, a double-balance frequency multiplier, an anti-parallel diode frequency multiplier, a varactor frequency multiplier, a step recovery diode SRD frequency multiplier and the like are mainly used. Only the SRD frequency multiplier can perform higher harmonic frequency multiplication, and has higher conversion efficiency and smaller additional phase noise. According to the frequency multiplication principle analysis, the frequency multiplier can adopt a single nonlinear device or a plurality of nonlinear devices. The circuit cannot effectively provide enough output power and larger dynamic range due to the power limitation of the single device, and the power capacity of the circuit can be improved by adopting a balanced structure by adopting a plurality of devices, so that larger output power is obtained and unwanted harmonic components are restrained. The prior art typically uses two anti-parallel diodes to achieve triple frequency multiplication. Because the external current of the anti-parallel diode pair only has fundamental wave and odd harmonic components, and has no direct current and even harmonic components, the output frequency spectrum component is reduced by half compared with single-tube frequency multiplication, and therefore, the structure adopting the anti-parallel diode pair is more suitable for the odd frequency multiplier. However, when the power of the signal source is too low, the diode cannot be driven to work, the conversion efficiency is reduced, when the power of the signal source is too high, the working point of the diode rapidly moves to a cut-off voltage area, the conversion efficiency is still reduced, and the circuit reliability is reduced due to the increase of the current passing through the diode, so that the conversion efficiency is ensured by selecting proper bias, and the bias voltage is adjusted to maximize the output power to obtain the optimal bias of the diode. The use of a standard rectangular waveguide as the RF interface for its input end necessarily encounters the transition problem from a suspended microstrip to a rectangular waveguide. At present, the terahertz secondary solid-state frequency multiplier and the tertiary solid-state frequency multiplier mainly utilize the even frequency multiplication principle in China, and the defect of the frequency tripler is that the number of pipes is too large, so that the miniaturization is not facilitated. The single frequency multiplication frequency of the low-order frequency multiplier is usually not more than 5, the frequency multiplication efficiency is higher, the output power is higher, the spice parameter of the actual diode is changed along with the increase of the frequency, the obtained s parameter and the embedded impedance have certain errors, the input impedance obtained by calculation has certain errors when the matching circuit is inaccurate in a device model, the mismatch of the circuit is caused, the frequency band response of the whole circuit is greatly influenced, and the circuit performance is reduced. And as the frequency multiplication times increase, the frequency multiplication efficiency and the output power will decrease rapidly. If the frequency multiplication is needed to be high, a multi-stage frequency multiplication chain is needed to be made, so that each stage is still low-order frequency multiplication. Along with the promotion of terahertz frequency channel, required local oscillator frequency is higher and higher, also the requirement to local oscillator input is higher and higher to cause the promotion of cost by a wide margin. Higher order frequency doubling devices typically employ step diodes. The frequency doubling times can reach more than 10' -20 times, the theoretical frequency doubling efficiency is about 1/n, n is the frequency doubling times, and the output power is smaller because of the high frequency doubling times. If the frequency is divided into a narrow frequency band, the frequency doubler can be divided into a narrow band (point frequency) frequency doubling and a wide band frequency doubling. All frequency doubling devices are easy to be made into narrow-band frequency doubling devices. Because nonlinear reactance frequency multiplication is difficult to realize broadband matching, the broadband frequency multiplication mainly adopts a nonlinear resistance frequency multiplication mode. The terahertz high-efficiency odd-order solid-state frequency multiplier is used for reducing the requirement on local oscillator input, effectively reducing the cost and meeting the increasing terahertz frequency band requirement. However, the prior art has the defect of lacking an efficient and stable terahertz odd harmonic frequency signal source.
Disclosure of Invention
Aiming at the problem that the prior art lacks a high-efficiency stable terahertz odd harmonic frequency signal source, the invention provides a high-order odd harmonic THz source frequency multiplier structure which has the advantages of simple structure, high efficiency and wide working frequency band and can effectively provide high-efficiency stable terahertz signals.
The above object of the present invention can be achieved by the following technical solution, which is a high-order odd harmonic THz source frequency multiplier, comprising an input rectangular waveguide 1, a microstrip transition structure 2, a local oscillator low-pass filter 3, a schottky diode 5 and an output microstrip-waveguide transition structure 6, and is characterized in that: the microstrip transition structure 2 is vertically connected with the fundamental wave low-pass filter 4 through the reverse L corner surface of the input rectangular waveguide 1, and simultaneously sequentially passes through the local oscillation low-pass filter 3, the Schottky diode 5 and the tail end of the output microstrip-waveguide transition structure 6, and is vertically connected with the output waveguide 7; the radio frequency signal and direct current feed from the outside are respectively input into the microstrip transition structure 2 through the standard rectangular waveguide 1 and the fundamental wave low-pass filter 4, the radio frequency signal enters the local oscillation low-pass filter 3 and the Schottky diode 5 through the standard rectangular waveguide 1 and the waveguide-microstrip transition structure 2, the fundamental wave of the input radio frequency signal is filtered and converted to generate higher harmonics containing odd and even harmonic components, meanwhile, the direct current feed feeds the Schottky diode 5 through the fundamental wave low-pass filter 4 through the microstrip transition structure 2 and the local oscillation low-pass filter 3, the higher harmonics generated by excitation are output to the output waveguide 7 through the microstrip-waveguide transition structure 6, the initial part is reduced, the required higher odd harmonic components are filtered through the high-pass filter, and finally the filtered odd harmonic components are output through the final standard rectangular waveguide of the output waveguide 7.
Compared with other terahertz solid-state frequency multiplier structures, the terahertz solid-state frequency multiplier has the following beneficial effects:
the structure is simple. The requirement for the local oscillator input frequency signal is low. The invention adopts a regular metal waveguide with a rectangular cross section and filled with air medium inside, and is used as a transmission line and a rectangular waveguide 1 of a microwave component, a waveguide tube above the vertical rectangular waveguide 1, a microstrip transition structure 2, a local oscillator low-pass filter 3, a Schottky diode 5 and an output microstrip-waveguide transition structure 6 which are arranged in the waveguide tube, an input waveguide-output waveguide 7 which is transversely connected with the output microstrip-waveguide transition structure 6, and a direct current feed fundamental wave low-pass filter 4 which is transversely connected with the waveguide tube, wherein the structure is not complex, and compared with other terahertz low-frequency solid-state frequency multiplier structural forms, the structure is simpler.
High efficiency and wide working frequency band. The invention inputs the radio frequency signal from outside into the local oscillation low-pass filter 3 and the Schottky diode 5 through the standard rectangular waveguide 1 and the waveguide-microstrip transition structure 2, filters and frequency-converts the fundamental wave of the input radio frequency signal, generates the higher harmonic wave containing odd and even harmonic wave components, filters the lower harmonic wave by reducing the initial part of the output waveguide 7, only improves the output power of the odd harmonic wave through the high-pass filter of the required odd harmonic wave component, generates the higher harmonic frequency component by adopting an odd frequency multiplication mode, and has lower frequency requirement of the required local oscillation input signal and is easier to realize. Compared with other terahertz low-order solid-state frequency multipliers, the frequency-division frequency multiplier has the advantages of wide working frequency band, higher efficiency and stability. Meanwhile, the recovery of even harmonic waves is improved and the transmission efficiency of terahertz signals is improved by adjusting the distance from the height-reduced waveguide of the initial part of the output waveguide 7 to the Schottky diode 5. The local oscillation low-pass filter 3 has only odd harmonics, no even harmonics and no direct current component in the total current after adding the local oscillation signals. The transition is carried out to a fundamental wave filtering matching circuit and a third harmonic matching circuit which adopt suspended coplanar waveguide structures through microstrip transmission lines. The fundamental wave filtering matching circuit can enable fundamental wave signals to enter the anti-parallel diode pair as much as possible, and reflect third harmonic waves (114-123 GHz) generated by the diode pair, so that third harmonic wave components can be output through the WR6 standard waveguide.
The terahertz signal can be effectively provided with high efficiency and stability. The invention can improve the power of the odd harmonic frequency component required by output and further inhibit the output of the impurity harmonic frequency component by adjusting the distance from the short road surface of the height-reduced waveguide of the initial part of the output waveguide 7 to the Schottky diode 5 and the distance from the Schottky diode 5 to the local oscillation low-pass filter 3. The local oscillator low-pass filter 3 which is connected with the Schottky diode 5 and can effectively filter fundamental waves or low-order harmonic components is added at the output end of the Schottky diode, the fundamental waves of input radio-frequency signals are filtered and converted, low-order even-order harmonics are filtered, and only required high-order odd-order harmonic components including high-order harmonics of odd-order and even-order harmonic components are generated. Meanwhile, low local oscillation frequency input is adopted to realize high-order odd harmonic frequency component output, the local oscillation low-pass filter 3 is used for carrying out impedance matching on the Schottky diode, the initial part of the output waveguide 7 is reduced to be high, a high-pass filter is formed, stable power output is realized, and the difficult problem of realizing efficient and stable terahertz signal sources in engineering application is solved.
The invention is particularly suitable for realizing the output of the radio frequency signals in the terahertz frequency range of 0.1 THz-0.5 THz.
Drawings
Fig. 1 is a top view of an odd solid state frequency multiplier in the terahertz frequency band of the present invention.
In the figure: the three-dimensional waveguide structure comprises a standard input rectangular waveguide, a 2 input waveguide-microstrip transition structure, a 3 local oscillation low-pass filter, a 4 direct current feed low-pass filter, a 5 Schottky diode, a 6 output microstrip-waveguide transition structure and a 7 output waveguide.
Detailed Description
See fig. 1. In the embodiment described below, a high-order odd harmonic THz source frequency multiplier comprises an input rectangular waveguide 1, a microstrip transition structure 2, a local oscillation low-pass filter 3, a schottky diode 5, and an output microstrip-waveguide transition structure 6, an input waveguide-output waveguide 7 transversely connected with the output microstrip-waveguide transition structure 6, and a direct current feed fundamental wave low-pass filter 4 transversely connected with the waveguide, wherein the microstrip transition structure 2 is connected with the direct current feed fundamental wave low-pass filter 4 through a cavity, and meanwhile, the local oscillation low-pass filter 3, the schottky diode 5 and the output microstrip-waveguide transition structure 6 are connected with the input waveguide-output waveguide 7 of the output microstrip-waveguide transition structure 6 to filter out odd harmonic components. The microstrip transition structure 2 is vertically connected with the fundamental wave low-pass filter 4 through the reverse L corner surface of the input rectangular waveguide 1, and simultaneously sequentially passes through the local oscillation low-pass filter 3, the Schottky diode 5 and the tail end of the output microstrip-waveguide transition structure 6, and is vertically connected with the output waveguide 7; the radio frequency signal and direct current feed from the outside are respectively input into the microstrip transition structure 2 through the standard rectangular waveguide 1 and the fundamental wave low-pass filter 4, the radio frequency signal enters the local oscillation low-pass filter 3 and the Schottky diode 5 through the standard rectangular waveguide 1 and the waveguide-microstrip transition structure 2, the fundamental wave of the input radio frequency signal is filtered and converted to generate higher harmonics containing odd and even harmonic components, meanwhile, the direct current feed feeds the Schottky diode 5 through the fundamental wave low-pass filter 4 through the microstrip transition structure 2 and the local oscillation low-pass filter 3, the higher harmonics generated by excitation are output to the output waveguide 7 through the microstrip-waveguide transition structure 6, the initial part is reduced, the required higher odd harmonic components are filtered through the high-pass filter, and finally the filtered odd harmonic components are output through the final standard rectangular waveguide of the output waveguide 7.
The rectangular waveguide 1 is a metal waveguide with a regular rectangular section and filled with air medium inside; the schottky diode 5 is in a multi-tube reverse series structure, and two ends of the schottky diode 5 are adhered to the suspension microstrip line. The input waveguide-microstrip transition structure 2 is sequentially connected in series with a Schottky diode 5 and an output microstrip-waveguide transition structure 6 through a local oscillation low-pass filter 3, and is installed on a mixed junction at the joint of the input waveguide and the suspension line by utilizing the matching of a standard waveguide and the suspension microstrip. The input waveguide-microstrip transition structure 2 can adopt a suspended microstrip line as a transmission line, and the transmission line can realize a very wide range of impedance values, thereby being beneficial to greatly reducing the loss of impedance matching media and the majority of electromagnetic field is concentrated in the air. The short-circuit length of the terminal of the rectangular waveguide 1 takes l/4 waveguide wavelengths to ensure that the probe is positioned at the position with the strongest electric field intensity in the waveguide, so as to achieve the highest coupling efficiency and reduce the insertion loss. Because of the high impedance of the waveguide, the height of the waveguide needs to be reduced to reduce the impedance so as to achieve the purpose of matching with the suspended microstrip.
The radio frequency signal from the outside enters a local oscillation low-pass filter 3 and a Schottky diode 5 through a standard rectangular waveguide 1 by a waveguide-microstrip transition structure 2, the fundamental wave of the input radio frequency signal is filtered and converted to generate higher harmonics comprising odd and even harmonic components, meanwhile, the Schottky diode 5 is excited by the direct current feed from the outside through the fundamental wave low-pass filter 4, the higher harmonics are output through the microstrip-waveguide transition structure 6 and enter an output waveguide 7 to reduce the initial part, a high-pass filter for filtering low-order and low-order even harmonics is formed, the required higher-order odd harmonic components are filtered, and the filtered odd harmonic components are finally output through a final standard rectangular waveguide of an output waveguide 7. The distance from the short-circuit surface of the output waveguide 7 to the Schottky diode 5 and the distance from the Schottky diode 5 to the local oscillation low-pass filter 3 are adjusted, so that the reflection coefficient of the input port is adjusted, and standing waves are improved.
The specific implementation can adopt the following steps:
(1) And determining the size of the input rectangular waveguide 1 according to the terahertz circuit frequency band requirement, selecting a proper dielectric substrate broadband, and determining the width of the reduced rectangular waveguide 1. The distance from the local oscillation low-pass filter 3 to the schottky diode 5 and the size of the input waveguide-microstrip transition structure 2 can be set by using microwave circuit computer-aided software, and the parameters of each input unit can be determined by optimizing design program of the software.
(2) The pair output section includes: and the direct current feed fundamental wave low-pass filter 4 and the output standard rectangular waveguide 1 perform performance optimization through simulation calculation. Parameters entered into each cell are determined using a microwave circuit computer aided software design program.
Claims (8)
1. The utility model provides a high order odd harmonic THz source frequency multiplier, includes an input rectangular waveguide (1), microstrip transition structure (2), local oscillator low pass filter (3), schottky diode (5) and output microstrip-waveguide transition structure (6), its characterized in that: the microstrip transition structure (2) is vertically connected with the fundamental wave low-pass filter (4) through the reverse L corner surface of the input rectangular waveguide (1), and simultaneously sequentially passes through the local oscillation low-pass filter (3), the Schottky diode (5) and the tail end of the output microstrip-waveguide transition structure (6) and is vertically connected with the output waveguide (7); the method comprises the steps that radio frequency signals and direct current feeds from the outside are respectively input into a micro-strip transition structure (2) through a standard input rectangular waveguide (1) and a fundamental wave low-pass filter (4), the radio frequency signals enter a local oscillation low-pass filter (3) and a Schottky diode (5) through the standard input rectangular waveguide (1) through the micro-strip transition structure (2), the fundamental waves of the input radio frequency signals are filtered and converted to generate higher harmonics containing odd harmonic components and even harmonic components, meanwhile, the direct current feeds feed the Schottky diode (5) through the fundamental wave low-pass filter (4) through the micro-strip transition structure (2) and the local oscillation low-pass filter (3), the higher harmonics generated by excitation are output to an output waveguide (7) through a micro-strip-waveguide transition structure (6), the initial part is reduced, the lower harmonics and the low-order standard higher harmonics which are formed by the output micro-strip-waveguide transition structure (6) and the output waveguide (7) together are filtered, the required higher harmonic components are filtered, and finally the filtered higher harmonic components are output through the output rectangular waveguide (7).
2. The higher order odd harmonic THz source frequency multiplier of claim 1 and wherein: the input rectangular waveguide (1) is a metal waveguide with a regular rectangular section and filled with air medium inside; the Schottky diode (5) is in a multi-tube reverse series structure, and two ends of the Schottky diode (5) are adhered to the suspension microstrip line.
3. The higher order odd harmonic THz source frequency multiplier of claim 1 and wherein: the microstrip transition structure (2) is sequentially connected with the Schottky diode (5) and the output microstrip-waveguide transition structure (6) in series through the local oscillation low-pass filter (3), and is installed on a mixed junction at the joint of the input waveguide and the suspension line by utilizing the matching of the standard waveguide and the suspension microstrip.
4. The higher order odd harmonic THz source frequency multiplier of claim 1 and wherein: the microstrip transition structure (2) adopts a suspended microstrip line as a transmission line, and the transmission line is impedance matched with a medium, and most of the electromagnetic field is concentrated in the air.
5. The higher order odd harmonic THz source frequency multiplier of claim 1 and wherein: the short-circuit length of the terminal of the input rectangular waveguide (1) is l/4 waveguide wavelengths, so that the probe is ensured to be positioned at the position with the strongest electric field intensity in the waveguide.
6. The higher order odd harmonic THz source frequency multiplier of claim 1 and wherein: the microstrip transition structure (2) is transited to a fundamental wave filtering matching circuit and a third harmonic matching circuit which adopt a suspended coplanar waveguide structure through a microstrip transmission line; the fundamental wave signal generated by the fundamental wave filtering and matching circuit enters the anti-parallel diode pair, and the third harmonic wave generated by the diode pair is reflected, and the third harmonic wave component is output through the standard waveguide.
7. The higher order odd harmonic THz source frequency multiplier of claim 1 and wherein: the microstrip transition structure (2) is connected with the direct current feed fundamental wave low-pass filter (4) through a cavity, and meanwhile, the input waveguide-output waveguide (7) of the output microstrip-waveguide transition structure (6) is connected through the local oscillation low-pass filter (3), the Schottky diode (5) and the output microstrip-waveguide transition structure (6), so that odd harmonic components are filtered and output.
8. The higher order odd harmonic THz source frequency multiplier of claim 1 and wherein: the distance from the short road surface of the height-reducing waveguide of the output waveguide (7) to the Schottky diode (5) and the distance from the Schottky diode (5) to the local oscillation low-pass filter (3) are adjusted, so that the reflection coefficient of an input port is adjusted, and standing waves are improved.
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