CN107331601A - The photoresist deposition and method for stripping metal of double exposure - Google Patents
The photoresist deposition and method for stripping metal of double exposure Download PDFInfo
- Publication number
- CN107331601A CN107331601A CN201710506489.3A CN201710506489A CN107331601A CN 107331601 A CN107331601 A CN 107331601A CN 201710506489 A CN201710506489 A CN 201710506489A CN 107331601 A CN107331601 A CN 107331601A
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- photoresist layer
- photoresist
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 118
- 239000002184 metal Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 37
- 230000008021 deposition Effects 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000151 deposition Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 241001074085 Scophthalmus aquosus Species 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a kind of photoresist of double exposure deposition and method for stripping metal, it is included in the first photoresist layer formed on substrate, its thickness is more than the thickness for the metallic pattern for needing to deposit；First time photolithographic exposure is carried out to first photoresist layer, in forming the first graphics field in first photoresist layer；In forming the second photoresist layer on first photoresist layer；Second of photolithographic exposure is carried out to second photoresist layer, in forming second graph region in second photoresist layer, the area in the second graph region is less than the area of the first graphics field；Development treatment is carried out to the first photoresist layer and the second photoresist layer, in groove of the formation with chamfering structure in the first photoresist layer and the second photoresist layer；Deposition forms metal level on the substrate；Substrate described in lift-off processing, makes remaining required metallic pattern on substrate.The present invention can control the depth of the chamfering structure so that the metal is smoothly peeled off.
Description
Technical field
The present invention is more particularly directed to a kind of photoresist of double exposure deposition and method for stripping metal, belong to semiconductor manufacturing skill
Art field.
Background technology
Metal deposit and lift-off technology are widely used in electronic device micro-nano technology at present.In order to form certain gold
Belong to figure, typically by lift-off technology, even if with electrode pattern is lithographically formed, then carry out metal deposit above, then by light
Photoresist is removed, that is, obtains metallic pattern.This technology generally requires to form photoresist chamfering, in favor of the smooth stripping of metal.
Prior art is usually to use cooperatively a kind of non-photosensitive materials (such as LOR) and a kind of light-sensitive material (such as common photoresist), non-light
Quick material is first layer, and light-sensitive material is the second layer；By exposure, the light-sensitive material on upper strata becomes to be soluble in developer solution, passed through
Development can be dissolved, after the photoresist of developing solution dissolution upper strata, can be touched non-photosensitive materials layer and also be dissolved.It is logical
Control time is crossed, certain undercutting, as chamfering can be formed.This technology is simple and easy to apply, is widely used, but passage time
Control, it is impossible to preferably control the amount of undercutting, can not form chamfering very little and peel off, it is too many that structure brill sky is easily caused into technique
Failure, more seriously, in the structure for possessing large area and small area perforate at the same time, because both rate of dissolutions differ
Cause, hardly result in uniform chamfering.Therefore a kind of more preferable chamfering deposition technique of controlling is needed.
The content of the invention
Deposited and method for stripping metal it is a primary object of the present invention to the photoresist for providing a kind of double exposure, to overcome
The deficiencies in the prior art.
To realize aforementioned invention purpose, the technical solution adopted by the present invention includes：
The embodiments of the invention provide a kind of photoresist of double exposure deposition and method for stripping metal, including：
The first photoresist of uniform coating on substrate, and the thickness for the first photoresist layer to be formed is more than what needs were deposited
The thickness of metallic pattern；
First time photolithographic exposure is carried out to first photoresist layer using the first reticle, in first photoresist layer
The first graphics field of interior formation；
The second photoresist layer is formed in the second photoresist of uniform coating on first photoresist layer；
Second of photolithographic exposure is carried out to second photoresist layer using the second reticle, in second photoresist layer
Interior formation second graph region, the shape of metallic pattern of the shape in the second graph region with needing to deposit is consistent, but institute
The area for stating second graph region is less than the area of the first graphics field；
Development treatment is carried out to the first photoresist layer and the second photoresist layer, so that in the first photoresist layer and the second photoetching
The groove with chamfering structure is formed in glue-line；
Deposition forms metal level on the substrate；
Peel off first photoresist layer, the second photoresist layer and be deposited on the first photoresist layer and the second photoresist layer
Metal level, make remaining required metallic pattern on substrate.
Further, the second graph region is distributed in first graphics field in substrate in the orthographic projection on substrate
On orthographic projection in.
Further, first photoresist and the second photoresist use positive photoresist or negative photoresist.
Further, the developer solution used in the first time photolithographic exposure and second of photolithographic exposure is identical.
Further, methods described includes：At least deposit to be formed with any of electron beam evaporation, sputtering mode mode
The metal level.
Further, methods described includes：First photoresist layer, the second photoresist layer are peeled off using stripper and sunk
Metal level of the product on the first photoresist layer and the second photoresist layer, makes only remaining required metallic pattern on substrate.
Compared with prior art, advantages of the present invention includes：The photoresist deposition and gold for the double exposure that the present invention is provided
Belong to stripping means using two layers of Other substrate materials, double exposure forms chamfering structure, can control the depth of the chamfering structure,
The chamfering structure is conducive to the smooth stripping of metal.
Brief description of the drawings
Fig. 1 is the substrate structure schematic diagram that deposition has first layer photoresist layer in the embodiment of the present invention；
Fig. 2 is using cutting blocks for printing the structure that first layer photoresist layer carries out first time photolithographic exposure to be shown in the embodiment of the present invention
It is intended to；
Fig. 3 is the structural representation that deposition has second layer photoresist layer in the embodiment of the present invention；
Fig. 4 is using cutting blocks for printing the structure that second layer photoresist layer carries out second of photolithographic exposure to be shown in the embodiment of the present invention
It is intended to；
Fig. 5 is the schematic diagram that chamfering structure is formed after being handled using developer solution in the embodiment of the present invention；
Fig. 6 is the substrate structure schematic diagram that deposition has metal level in the embodiment of the present invention；
Fig. 7 is the substrate structure schematic diagram of only reserved metallic pattern in the embodiment of the present invention.
Embodiment
In view of deficiency of the prior art, inventor is able to propose the present invention's through studying for a long period of time and largely putting into practice
Technical scheme.The technical scheme, its implementation process and principle etc. will be further explained as follows.
The embodiments of the invention provide a kind of photoresist of double exposure deposition and method for stripping metal, including：
The first photoresist of uniform coating on substrate, and the thickness for the first photoresist layer to be formed is more than what needs were deposited
The thickness of metallic pattern；
First time photolithographic exposure is carried out to first photoresist layer using the first reticle, in first photoresist layer
The first graphics field of interior formation；
The second photoresist layer is formed in the second photoresist of uniform coating on first photoresist layer；
Second of photolithographic exposure is carried out to second photoresist layer using the second reticle, in second photoresist layer
Interior formation second graph region, the shape of metallic pattern of the shape in the second graph region with needing to deposit is consistent, but institute
The area for stating second graph region is less than the area of the first graphics field；
Development treatment is carried out to the first photoresist layer and the second photoresist layer, so that in the first photoresist layer and the second photoetching
The groove with chamfering structure is formed in glue-line；
Deposition forms metal level on the substrate；
Peel off first photoresist layer, the second photoresist layer and be deposited on the first photoresist layer and the second photoresist layer
Metal level, make remaining required metallic pattern on substrate.
Further, the second graph region is distributed in first graphics field in substrate in the orthographic projection on substrate
On orthographic projection in.
Further, first photoresist and the second photoresist use positive photoresist or negative photoresist.
Further, the developer solution used in the first time photolithographic exposure and second of photolithographic exposure is identical.
Further, methods described includes：At least deposit to be formed with any of electron beam evaporation, sputtering mode mode
The metal level.
Further, methods described includes：First photoresist layer, the second photoresist layer are peeled off using stripper and sunk
Metal level of the product on the first photoresist layer and the second photoresist layer, makes only remaining required metallic pattern on substrate.
The photoresist deposition and method for stripping metal for the double exposure that the present invention is provided use two layers of Other substrate materials, twice
Exposure forms chamfering structure, can control the depth of the chamfering structure, and the chamfering structure is conducive to the smooth of metal
Peel off.
Embodiment 1
(1) in deposition on substrate first layer photoresist, the species and thickness of photoresist are selected according to actual process, and thickness should
More than the thickness of metal to be deposited, by taking AZ4620 as an example, concrete structure is as shown in Figure 1.
(2) first layer photoresist exposes
First time photolithographic exposure is carried out using the first photolithography plate, dimension of picture is a+2b, and concrete structure is as shown in Figure 2.
(3) second layer photoresist is deposited
In deposition on substrate second layer photoresist, the species and thickness of photoresist are selected according to actual process, general to select
Common photoresist, but the developer solution of first layer and second layer photoresist should be consistent, and by taking AZ5214 as an example, concrete structure is as schemed
Shown in 3.
(4) second layer photoresist exposes
Second of photolithographic exposure is carried out using the second photolithography plate, dimension of picture is a, and concrete structure is as shown in Figure 4.
(5) developed using developer solution
Only exposure area can be showed, therefore can be developed the sufficiently long time, it is not necessary to worry the empty problem of lateral brill,
The problem of solving large area and inconsistent small area developing powder, the depth of chamfering of formation is b, and concrete structure is as shown in Figure 5.
(6) metal deposit
Metal deposit is carried out using techniques such as electron beam evaporation, sputterings, concrete structure is as shown in Figure 6.
(7) peel off
Because photoresist has chamfering, photoresist will not involve together at chamfering, be conducive to being finally peeled away the entrance of liquid,
So as to ensure the integrality of metal-stripping, concrete structure is as shown in Figure 7.
It should be appreciated that the technical concepts and features of above-described embodiment only to illustrate the invention, its object is to allow be familiar with this
The personage of item technology can understand present disclosure and implement according to this, and it is not intended to limit the scope of the present invention.It is all
The equivalent change or modification made according to spirit of the invention, should all be included within the scope of the present invention.
Claims (6)
1. the photoresist deposition and method for stripping metal of a kind of double exposure, it is characterised in that including：
The first photoresist of uniform coating on substrate, and the thickness for the first photoresist layer to be formed is more than the metal that needs are deposited
The thickness of figure；
First time photolithographic exposure is carried out to first photoresist layer using the first reticle, in shape in first photoresist layer
Into the first graphics field；
The second photoresist layer is formed in the second photoresist of uniform coating on first photoresist layer；
Second of photolithographic exposure is carried out to second photoresist layer using the second reticle, in shape in second photoresist layer
Into second graph region, the shape of metallic pattern of the shape in the second graph region with needing to deposit is consistent, but described the
The area of two graphics fields is less than the area of the first graphics field；
Development treatment is carried out to the first photoresist layer and the second photoresist layer, so that in the first photoresist layer and the second photoresist layer
It is interior to form the groove with chamfering structure；
Deposition forms metal level on the substrate；
Peel off first photoresist layer, the second photoresist layer and the gold being deposited on the first photoresist layer and the second photoresist layer
Belong to layer, make remaining required metallic pattern on substrate.
2. the photoresist deposition and method for stripping metal that double expose according to claim 1, it is characterised in that：Described second
Graphics field is distributed in first graphics field in the orthographic projection on substrate in the orthographic projection on substrate.
3. the photoresist deposition and method for stripping metal that double expose according to claim 1, it is characterised in that：Described first
Photoresist and the second photoresist use positive photoresist or negative photoresist.
4. the photoresist deposition and method for stripping metal that double expose according to claim 1, it is characterised in that：Described first
The developer solution used in secondary photolithographic exposure and second of photolithographic exposure is identical.
5. the photoresist deposition and method for stripping metal that double expose according to claim 1, it is characterised in that including：At least
Deposit to form the metal level with any of electron beam evaporation, sputtering mode mode.
6. the photoresist deposition and method for stripping metal that double expose according to claim 1, it is characterised in that including：Using
Stripper is peeled off first photoresist layer, the second photoresist layer and is deposited on the first photoresist layer and the second photoresist layer
Metal level, makes only remaining required metallic pattern on substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710506489.3A CN107331601A (en) | 2017-06-29 | 2017-06-29 | The photoresist deposition and method for stripping metal of double exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710506489.3A CN107331601A (en) | 2017-06-29 | 2017-06-29 | The photoresist deposition and method for stripping metal of double exposure |
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| Publication Number | Publication Date |
|---|---|
| CN107331601A true CN107331601A (en) | 2017-11-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710506489.3A Pending CN107331601A (en) | 2017-06-29 | 2017-06-29 | The photoresist deposition and method for stripping metal of double exposure |
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389784A (en) * | 2018-02-26 | 2018-08-10 | 清华大学 | The preparation method of patterned metal layer |
| CN108735582A (en) * | 2018-04-09 | 2018-11-02 | 中国电子科技集团公司第十研究所 | A kind of preparation method of photoresist film |
| CN110011633A (en) * | 2019-04-25 | 2019-07-12 | 北京中科飞鸿科技有限公司 | A kind of SAW filter preparation method with positive photoresist high adhesion force |
| CN110379707A (en) * | 2019-08-21 | 2019-10-25 | 无锡英菲感知技术有限公司 | A kind of lift-off structure of metal patternization and preparation method thereof |
| CN110544625A (en) * | 2019-07-25 | 2019-12-06 | 西安电子科技大学 | t-shaped grid for inhibiting short channel effect and manufacturing process thereof |
| CN110556284A (en) * | 2018-06-04 | 2019-12-10 | 厦门乾照光电股份有限公司 | method for manufacturing chip of light emitting diode and sputtering method |
| CN110568720A (en) * | 2019-08-27 | 2019-12-13 | 清华大学深圳研究生院 | method for manufacturing micro-polaroid template |
| CN111399338A (en) * | 2020-04-30 | 2020-07-10 | 合肥本源量子计算科技有限责任公司 | Photoetching method |
| CN111517275A (en) * | 2020-05-09 | 2020-08-11 | 中北大学 | Preparation method of practical radio frequency MEMS switch double-layer sacrificial layer |
| CN112038218A (en) * | 2020-09-04 | 2020-12-04 | 武汉敏芯半导体股份有限公司 | Preparation process of ridge waveguide DFB laser based on double-glue-layer structure |
| CN112164980A (en) * | 2020-10-09 | 2021-01-01 | 苏州苏纳光电有限公司 | Ridge passivation method of DFB chip |
| CN112271133A (en) * | 2020-09-25 | 2021-01-26 | 华东光电集成器件研究所 | Metal stripping method based on three layers of glue |
| CN112650026A (en) * | 2020-03-06 | 2021-04-13 | 腾讯科技（深圳）有限公司 | Multilayer adhesive film based on single photoresist, patterning method and stripping method thereof |
| CN112864798A (en) * | 2021-01-26 | 2021-05-28 | 威科赛乐微电子股份有限公司 | Preparation method of VCSEL chip metal film electrode |
| CN113075868A (en) * | 2020-01-06 | 2021-07-06 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and double-layer photoresist stripping method |
| CN113319387A (en) * | 2021-06-18 | 2021-08-31 | 南京航空航天大学 | Large-scale preparation method of heat exchange enhancement microstructure |
| CN113805432A (en) * | 2020-06-11 | 2021-12-17 | 山东华光光电子股份有限公司 | Photoetching plate and method for improving metal stripping efficiency |
| CN114039010A (en) * | 2021-09-22 | 2022-02-11 | 云南北方奥雷德光电科技股份有限公司 | Method for manufacturing photoetching internally-tangent structure of silicon-based OLED (organic light emitting diode) pixel |
| CN114460819A (en) * | 2022-01-14 | 2022-05-10 | 北京量子信息科学研究院 | Alignment mark for electron beam exposure and preparation method thereof |
| WO2022227019A1 (en) * | 2021-04-30 | 2022-11-03 | 华为技术有限公司 | Method for forming gate, and semiconductor device |
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Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389784A (en) * | 2018-02-26 | 2018-08-10 | 清华大学 | The preparation method of patterned metal layer |
| CN108735582A (en) * | 2018-04-09 | 2018-11-02 | 中国电子科技集团公司第十研究所 | A kind of preparation method of photoresist film |
| CN110556284A (en) * | 2018-06-04 | 2019-12-10 | 厦门乾照光电股份有限公司 | method for manufacturing chip of light emitting diode and sputtering method |
| CN110011633A (en) * | 2019-04-25 | 2019-07-12 | 北京中科飞鸿科技有限公司 | A kind of SAW filter preparation method with positive photoresist high adhesion force |
| CN110544625A (en) * | 2019-07-25 | 2019-12-06 | 西安电子科技大学 | t-shaped grid for inhibiting short channel effect and manufacturing process thereof |
| CN110544625B (en) * | 2019-07-25 | 2022-04-22 | 西安电子科技大学 | T-shaped grid for inhibiting short channel effect and manufacturing process thereof |
| CN110379707A (en) * | 2019-08-21 | 2019-10-25 | 无锡英菲感知技术有限公司 | A kind of lift-off structure of metal patternization and preparation method thereof |
| CN110379707B (en) * | 2019-08-21 | 2024-05-28 | 无锡英菲感知技术有限公司 | Metal patterned stripping structure and manufacturing method thereof |
| CN110568720A (en) * | 2019-08-27 | 2019-12-13 | 清华大学深圳研究生院 | method for manufacturing micro-polaroid template |
| CN110568720B (en) * | 2019-08-27 | 2023-11-17 | 清华大学深圳研究生院 | Manufacturing method of micro-polarizer template |
| CN113075868A (en) * | 2020-01-06 | 2021-07-06 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and double-layer photoresist stripping method |
| CN113075868B (en) * | 2020-01-06 | 2024-07-02 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and double-layer photoresist stripping method |
| CN112650026B (en) * | 2020-03-06 | 2022-09-30 | 腾讯科技（深圳）有限公司 | Multilayer adhesive film based on single photoresist, patterning method and stripping method thereof |
| CN112650026A (en) * | 2020-03-06 | 2021-04-13 | 腾讯科技（深圳）有限公司 | Multilayer adhesive film based on single photoresist, patterning method and stripping method thereof |
| CN111399338B (en) * | 2020-04-30 | 2023-03-28 | 合肥本源量子计算科技有限责任公司 | Photoetching method |
| CN111399338A (en) * | 2020-04-30 | 2020-07-10 | 合肥本源量子计算科技有限责任公司 | Photoetching method |
| CN111517275A (en) * | 2020-05-09 | 2020-08-11 | 中北大学 | Preparation method of practical radio frequency MEMS switch double-layer sacrificial layer |
| CN113805432A (en) * | 2020-06-11 | 2021-12-17 | 山东华光光电子股份有限公司 | Photoetching plate and method for improving metal stripping efficiency |
| CN112038218A (en) * | 2020-09-04 | 2020-12-04 | 武汉敏芯半导体股份有限公司 | Preparation process of ridge waveguide DFB laser based on double-glue-layer structure |
| CN112271133A (en) * | 2020-09-25 | 2021-01-26 | 华东光电集成器件研究所 | Metal stripping method based on three layers of glue |
| CN112164980A (en) * | 2020-10-09 | 2021-01-01 | 苏州苏纳光电有限公司 | Ridge passivation method of DFB chip |
| CN112864798A (en) * | 2021-01-26 | 2021-05-28 | 威科赛乐微电子股份有限公司 | Preparation method of VCSEL chip metal film electrode |
| WO2022227019A1 (en) * | 2021-04-30 | 2022-11-03 | 华为技术有限公司 | Method for forming gate, and semiconductor device |
| CN113319387B (en) * | 2021-06-18 | 2022-04-12 | 南京航空航天大学 | Large-scale preparation method of heat exchange enhancement microstructure |
| CN113319387A (en) * | 2021-06-18 | 2021-08-31 | 南京航空航天大学 | Large-scale preparation method of heat exchange enhancement microstructure |
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