CN107168647B - FLASH data read-write method and system - Google Patents
FLASH data read-write method and system Download PDFInfo
- Publication number
- CN107168647B CN107168647B CN201710249237.7A CN201710249237A CN107168647B CN 107168647 B CN107168647 B CN 107168647B CN 201710249237 A CN201710249237 A CN 201710249237A CN 107168647 B CN107168647 B CN 107168647B
- Authority
- CN
- China
- Prior art keywords
- page
- data
- area
- index area
- flash
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
- G06F3/0652—Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0604—Improving or facilitating administration, e.g. storage management
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
The invention discloses a FLASH data read-write method and a system, wherein the method allocates N pages in FLASH as data storage areas for storing data records, wherein one page is used as an index area, and the other N-1 pages are used as recording areas, and the method also comprises the following steps: s101, judging whether the target page Nm is fully written, if not, executing S102, and if so, turning to the following steps S1 a-S1 c; step S102, writing the data to be written into the target page Nm of the recording area in sequence; step S1a, erasing the information of the page Nm +2 of the recording area, namely setting all the page contents as 0xff identification information; step S1b, writing the page number sequence of the page Nm +1 of the data to be written in the data recording area into the index area; step S1c, writing the data to be written into the page Nm +1 of the recording area in sequence; and N-1 pages of the recording area are storage areas of a circular queue. The technical scheme of the invention reduces the erasing frequency of the FLASH, prolongs the service life, and can quickly search the last position of the storage record when the last power failure occurs.
Description
Technical Field
The invention relates to the field of data storage, in particular to a FLASH data read-write method and a FLASH data read-write system.
Background
Aiming at related equipment in the field of embedded systems, a user requires to save running data of the equipment in real time, the continuous recording time is not less than 5 minutes, the data per minute is not less than 60 records, enough storage space is provided, the data is not lost when power failure occurs, and the service life of a storage is not less than 20 years. Each record length is 20 bytes (8 bits/byte), the front 14 bytes store the state of the equipment and various information, and the rear 6 bytes store the real-time year, month, day, hour, minute and second.
Currently, methods for saving data include: hard disk, electronic disk, RAM external battery, FLASH FLASH memory, etc. Wherein, the hard disk and the electronic disk have high cost and large volume; the method of adding the battery outside the RAM uses the battery, so the battery has short service life and can not meet the requirements; FLASH memory is widely applied to various embedded systems due to the advantages of large storage space, low price and the like. A conventional FLASH is internally divided into a plurality of memory cell pages (pages), which are the smallest erasable unit, and bytes or words are the smallest unit of write data. Unlike the general memory, the writing operation of the FLASH memory must erase the memory cell first and then write the memory cell. Because the FLASH memory has limited erasing times, the service life of the FLASH memory is influenced by frequent erasing and writing, and the service life cannot meet the requirement without special treatment.
Disclosure of Invention
The invention mainly solves the technical problem of providing a method for storing and quickly searching built-in FLASH data of an embedded system (or a single chip microcomputer), which can avoid using an RAM (random access memory) and a battery to reduce the service life, can also avoid using a hard disk and an electronic disk to increase the cost and increase the volume, and does not need to increase an off-chip memory, reduce the area of a single board of a product and reduce the cost. The method has the advantages of reducing the erasing times of the FLASH, solving the problem of service life, and solving the problem that the last recorded position stored when the FLASH is shut down last time is quickly searched by the electric energy.
Aiming at the existing problems, the invention provides a FLASH data read-write method, which is characterized in that: allocating N pages as data storage areas in FLASH for storing data records, wherein one page is used as an index area, and the other N-1 pages are used as recording areas, and the method comprises the following steps:
s101, judging whether the target page Nm is fully written, if not, executing S102, and if so, turning to the following steps S1 a-S1 c;
step S102, writing the data to be written into the target page Nm of the recording area in sequence;
step S1a, erasing the information of the page Nm +2 of the recording area, namely setting all the page contents as 0xff identification information;
step S1b, writing the page number sequence of the page Nm +1 of the data to be written in the data recording area into the index area;
step S1c, writing the data to be written into the page Nm +1 of the recording area in sequence;
the step S1b further includes the following steps before:
step S201: judging whether the index area is full, if so, executing the step S202; if not, go to step S1 b;
step S202: erasing all the storage unit information of the index area, namely setting all the page content to be 0xff identification information;
step S203: writing the page number of the page Nm +1 into the first storage unit of the index area;
and N-1 pages of the recording area are storage areas of a circular queue.
Further, the method further includes the following step, when the FLASH is started, before the step S101, the following step is further executed:
step S301: starting reverse search from the last storage unit of the index area, searching whether identification information of which the information in the storage unit is equal to 0xff exists or not, and if not, executing the step S302;
step S302: reading page number information Nm stored in the index area, wherein the Nm is the page number of the data record stored at last;
step S303: starting reverse search from the last storage unit in Nth page of the recording area, searching whether the information in the storage unit is equal to the identification information of 0xff, if not, the address W of the byte is the storage position of the last stored data record;
step S304: judging whether the data is written or read, if so, turning to step S305; if the data is read, switching to a data reading subprogram P1, wherein the subprogram P1 is a subprogram for reading records from the m pages of W addresses in a reverse direction to the front direction, calculating the length of the read data according to given parameters, and further reading the data of the corresponding FLASH until the reading is finished;
step S305: and writing the data to be written into the memory cells behind the address W of the Nm page.
Further, the step S305 further includes, before:
step S401: if yes, that is, if page Nm is full of data, the process goes to step S1a, otherwise, step S305 is executed.
Further, after step S301, the method further includes:
step S501, if the index area and the recording area are identification information of 0xff, executing step S502, if not, going to step S302;
step S502: the first unit of the index area writes page number information of a target page of the data to be written;
step S503: as per step S102.
Further, the index area is the first page or the last page of the data storage area.
In addition, the invention also discloses a FLASH data read-write system, which is characterized in that: the system comprises:
a storage area dividing module, configured to allocate N pages in FLASH as data storage areas for storing data records, where each page contains the same storage unit, where one page is used as an index area, and the remaining N-1 pages are used as recording areas, and the system further includes:
a data writing module: the data recording area comprises an index area writing module and a recording area writing module, wherein the index area writing module writes the page number of a target page Nm of data to be written in the data recording area into a storage unit of the index area; a recording area writing module: sequentially writing data in the target page Nm of the recording area;
the first judging module judges whether the target page Nm of the data recording area is full, and the target page Nm +1 pages are changed from the Nm page to the target page to be written after the target page Nm is full;
and the first erasing module is used for erasing the information of the second page Nm +2 after the target page Nm of the recording area, namely setting all the contents of the page as the specific identification information.
Further, the system further comprises:
the second judging module is used for judging whether the index area is full and transferring to a second erasing module after the index area is full;
the second erasing module erases the information of the index area, namely, the content of the page is set as the specific identification information;
further, the system further comprises:
a record query module: and after the system is restarted after power failure, inquiring the position of the record before power failure, inquiring the page number of the record in the index area, and finding the specific position of the record in the corresponding page number.
The invention also discloses a FLASH data read-write system, which is characterized by comprising the following components: memory cell array, control bit line and processor, wherein the processor performs the steps of any one of claims 1-5 to complete data reading and writing.
Further, each page of the index area and the recording area contains the same memory cell.
According to the FLASH data read-write method and the FLASH data read-write system, the index number is not fixed in a storage unit, but is stored in a page in sequence, the page number of the data record is stored in the guide recording area, and the data record is erased and stored after the storage is full; the data records are stored in a plurality of pages, and after the data records are stored for each full page, the data of the lower page of the page full of data is erased, namely only one page of data is erased, so that the continuous recording time is long, the erasing times of the FLASH are greatly reduced, and the service life of the FLASH is prolonged. The method solves the erasing service life problem of the FLASH, and also solves the problem that the last recorded position stored when the FLASH is shut down last time can be quickly found by electrifying.
Description of the drawings:
FIG. 1 is a flow chart of a main program of a FLASH data read/write method according to the present invention;
FIG. 2 is a flowchart of a restart procedure of the FLASH data read/write method after a power failure according to the present invention;
FIG. 3 is a flowchart of a second program restarted after the power failure of the FLASH data read/write method according to the present invention;
FIG. 4 is a first block diagram of the FLASH data read-write system structure of the embedded system according to the present invention;
FIG. 5 is a block diagram of a FLASH data read-write system structure of the embedded system of the present invention;
fig. 6 is a block diagram of a FLASH data read-write system structure of the embedded system of the present invention.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to be illustrative, not limiting and are not intended to limit the scope of the invention.
The implementation of the technical scheme of the invention is explained in detail by taking an example of a built-in FLASH of an ARM Cortex-M3 core microcontroller. The ARM Cortex-M3 core microcontroller has built-in FLASH memory structure allocation as shown in Table 1. Pages 0-10 are program memory areas, pages 11 to 126 are data storage areas, wherein page 11 is a data index area of the data storage area, page 126 can also be set as a data index area, and the rest pages 115 are data recording areas; page 127 is the parameter configuration storage area.
Table 1 ARM Cortex-M3 core microcontroller built-in FLASH memory fabric allocation
When the program code is downloaded, information on the 11 th to 126 th pages in the data storage area is erased, that is, the contents of all the memory cells are set to the identification information 0 xff. And after the equipment is put into use, regularly saving records according to requirements. Recording the target page stored in the data storage area according to the requirement, firstly writing the page number of the target page into the index area, and then writing the data to be recorded into the target page according to the sequence.
As shown in fig. 1, a schematic diagram of a main program flow of a FLASH data read-write method implemented according to the present invention specifically includes:
s101, judging whether the target page Nm is fully written, if not, executing S102, and if so, turning to the following steps S1 a-S1 c;
step S102, after the product is put into first power-on, the page number of the first page of the recording area, namely page 12, is written into the first memory cell of the index area, namely page 11 of the data storage area,
step S103, writing the data to be recorded into the first page, namely the 12 th page, of the recording area according to the sequence;
step S104, when the first page, namely the 12 th page, is fully written, the following steps are adopted:
step S1a, erasing the information of the third page (14 th page) of the recording area, namely the identification information of 0 xff;
step S1b, writing the page number of the second page of the recording area, namely page 13, into the second storage unit of the index area in sequence;
step S1c, writing the data to be recorded into the second page 13 of the recording area;
the N-1 pages of the recording area, namely the storage area between the 12 th page and the 126 th page, are a queue cycle, and the page numbers are sequentially stored in the index area. FLASH can only store information starting from even addresses, so the index area has 1K bytes of storage, and the page number of each cycle of the recording area is 115, so the index area can be fully written after nearly 9 cycles.
Step S1b is preceded by:
step S202: pre-determining whether the index area storage unit is full, if so, executing step 202; if not, go to step S1 b;
step S202: erasing all storage unit information in the index area, namely setting all the page contents as 0xff identification information;
step S203: page Nm+1The page number of (a) is written into the first memory location of the index area.
According to the technical scheme, when the device is restarted after power failure in use, the storage position written with the record last time of shutdown is searched first. The sequential storage of records following the last stored record or reading of records according to the settings is then continued according to the method described above.
As shown in fig. 2, the details are as follows:
step S301: starting from the last memory cell of the index block of page 11, the search is performed for a byte other than 0xff, which is shown in Table 2, where 0x, Nm-2、Nm-1、Nm(m ranges from 12 to 126) indicates that the data is not 0xff,
step S302: and reading page number information Nm stored in the storage unit in the index area, wherein the Nm is the page number of the last stored data record, namely the last record is stored in the Nm page before power failure.
Step S303: and searching back from the last storage unit in the Nth page, and finding out that the data content of the W unit is not 0xff, namely searching the storage position of the record stored last time when the computer is shut down. Schematically shown in table 3.
Step S304: newly-collected data information is written into a storage unit behind the address W of the Nm page according to the step S102; or the previous n records are arbitrarily read, starting from the memory cell of the address W, i.e., the P1 operation is performed.
TABLE 1 Page number storage schematic in page 11 of index area (2k memory)
| 0x** | 0x** | 0x** | 0x** | 0x** | 0x** | 0x** | 0x** |
| … | … | … | … | … | … | … | … |
| … | … | Nm-2 | Nm-1 | Nm | 0xff | 0xff | 0xff |
| 0xff | 0xff | 0xff | 0xff | 0xff | 0xff | 0xff | 0xff |
| … | … | … | … | … | … | … | … |
| 0xff | 0xff | 0xff | 0xff | 0xff | 0xff | 0xff | 0xff |
TABLE 2 schematic diagram of data storage on pages 12 to 126 in the recording area
Step S304: when storing new data, sequentially storing records after the last storage position, namely the address W of the Nm page, in the last shutdown, and executing the step S103 when the Nm page is full; the first n records (n <11673) can be read arbitrarily, starting from the location where the record was last stored when the data was read.
As an embodiment of the present invention, if all the cells of the index area page 11 are 0xff, the process is performed as shown in FIG. 3.
As the present invention stores one record per second, 20 bytes per record, at the user's request, 196 minutes of data can be recorded continuously, much greater than the 5 minute requirement for continuous recording. The calculated data storage life is 37.34 years (wherein the recording area life is 37.34 years and the index area life is 332.5 years), and meets the use requirement of 20 years.
Corresponding to the above method, the invention provides an embedded system FLASH data read-write system, the structural block diagrams of which are shown in fig. 4, 5 and 6, and the read-write systems shown in fig. 5 and 6 are respectively an improvement of the system shown in fig. 4.
The system comprises N pages of same storage units, wherein one page is used as an index area, and the other N-1 pages are used as recording areas, and the system also comprises:
a data writing module: the device comprises an index area writing unit and a recording area writing unit, wherein the index area writing unit is used for writing the page number of a target page Nm of data to be written in a data recording area into an index area storage unit;
a recording area writing module: sequentially writing data in a target page Nm of a recording area memory cell;
the first judging module is used for judging whether the target page Nm in the storage unit of the data recording area is full, and changing the target page to be written from Nm to Nm +1 after the target page Nm is full;
the first erasing module is used for erasing the identification information of which the content of the second page Nm +2 is set to be 0xff after the target page Nm in the storage unit of the recording area;
as shown in fig. 5, according to another embodiment of the present invention,
the second judging module is used for judging whether the storage unit of the index area is full and transferring to the second erasing module after the storage unit of the index area is full;
the second erasing module is used for erasing the information of the storage unit of the index area, namely setting all the contents of the page as specific identification information; wherein the specific identification information may be 0 xff.
As shown in fig. 6, further, the system of the present invention further includes the following components:
in the system, under the condition of power failure, a record query module is called and used for querying the position of the record before power failure after the system is restarted after power failure, wherein the mode of searching the position of the record before power failure is that the page number of the record in the index area is queried firstly, and then the specific position of the record information is found in the corresponding page number, wherein the specific position is as follows: and starting reverse searching from the last storage unit in the Nth page, searching whether the information in the storage unit is equal to the specific identification information, and if not, determining that the address W of the byte is the storage position of the last stored data record.
Of course, in a specific FLASH implementation system, the FLASH system includes a memory cell array, bit lines, a bit line controller, and the like, and the read/write of the data of the FLASH in the system is controlled in the above-described control manner based on the above-described hardware implementation.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. A FLASH data read-write method is characterized in that: allocating N pages as data storage areas in FLASH for storing data records, wherein one page is used as an index area, and the other N-1 pages are used as recording areas, and the method comprises the following steps:
step S101, judging a target page NmIf the program is full, executing S102 if the program is not full, and if the program is full, turning to the following steps S1 a-S1 c;
step S102, writing the data to be written into the target page N of the recording area in sequencemPerforming the following steps;
step S1a of erasing page N of the recording aream+2The information of (1) is identification information that all the page contents are set to 0 xff;
step S1b, page N of the data to be written in the data recording aream+1The page number of the index area is written in the index area in sequence;
step S1c, writing the data to be written into the page N of the recording area in sequencem+1Performing the following steps;
the step S1b further includes the following steps before:
step S201: judging whether the index area is full, if so, executing the step S202; if not, go to step S1 b;
step S202: erasing all the storage unit information of the index area, namely setting all the page content to be 0xff identification information;
step S203: page Nm+1The page number of the index area is written into the first storage unit of the index area;
the N-1 page of the recording area is a storage area of a circular queue, and when the FLASH is started, the following steps are executed before the step S101:
step S301: starting reverse search from the last storage unit of the index area, searching whether identification information of which the information in the storage unit is equal to 0xff exists or not, and if not, executing the step S302;
step S302: reading page number information Nm stored in the index area, wherein the Nm is the page number of the data record stored at last;
step S303: starting reverse search from the last storage unit in the Nth page of the recording area, searching whether the information in the storage unit is equal to the identification information of 0xff, if not, the address W where the byte of the identification information which is not equal to 0xff is located is the storage position of the last stored data record;
step S304: judging whether the data is written or read, if so, turning to step S305; if the data is read, switching to a data reading subprogram P1, wherein the subprogram P1 is a subprogram for reading records from the m pages of W addresses in a reverse direction to the front direction, calculating the length of the read data according to given parameters, and further reading the data of the corresponding FLASH until the reading is finished;
step S305: writing the data to be written into the NmMemory cells after address W of the page.
2. The method for reading and writing FLASH data according to claim 1, wherein said step S305 further comprises:
step S401: if yes, that is, if page Nm is full of data, the process goes to step S1a, otherwise, step S305 is executed.
3. The method of claim 2, wherein step S301 is followed by further comprising:
step S501, if the index area and the recording area are identification information of 0xff, executing step S502, if not, going to step S302;
step S502: the first unit of the index area writes page number information of a target page of the data to be written;
step S503: as per step S102.
4. A method as claimed in any one of claims 1 to 3, wherein said index area is the first page or the last page of said data storage area.
5. A FLASH data read-write system is characterized in that: the system comprises:
a storage area dividing module, configured to allocate N pages in FLASH as data storage areas for storing data records, where each page contains the same storage unit, where one page is used as an index area, and the remaining N-1 pages are used as recording areas, and the system further includes:
a data writing module: the data recording area comprises an index area writing module and a recording area writing module, wherein the index area writing module writes a target page N of data to be written in the data recording areamWriting the page number into the index area storage unit; a recording area writing module: writing data sequentially to a target page N of a recording areamPerforming the following steps;
a first judging module for judging the target page N of the data recording areamWhether the page is full or not, and the target page to be written after the page is full is determined by NmPage to page Nm+1
A first erasing module for erasing the target page N of the recording areamSecond page Nm+2Setting all the page contents as specific identification information; the read-write system further comprises:
the second judging module is used for judging whether the index area is full and transferring to a second erasing module after the index area is full;
and the second erasing module erases the information of the index area, namely, the content of the page is set as the specific identification information.
6. The FLASH data read-write system of claim 5, further comprising:
a record query module: and inquiring the page number of the record in the index area before the position of the record before the system is restarted, and finding the specific position of the record in the corresponding page number.
7. A FLASH data read-write system, the system comprising: memory cell array, control bit line and processor, wherein the processor performs the steps of any one of claims 1-3 to perform data reading and writing.
8. The FLASH data read-write system of claim 7, wherein said index area and said recording area contain the same memory location per page.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710249237.7A CN107168647B (en) | 2017-04-17 | 2017-04-17 | FLASH data read-write method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710249237.7A CN107168647B (en) | 2017-04-17 | 2017-04-17 | FLASH data read-write method and system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107168647A CN107168647A (en) | 2017-09-15 |
| CN107168647B true CN107168647B (en) | 2020-10-23 |
Family
ID=59849141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710249237.7A Active CN107168647B (en) | 2017-04-17 | 2017-04-17 | FLASH data read-write method and system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107168647B (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107608639A (en) * | 2017-10-20 | 2018-01-19 | 深圳益邦阳光有限公司 | Queue-type cycle storage method, electronic equipment and storage medium based on flash memory |
| CN108052457A (en) * | 2017-12-06 | 2018-05-18 | 吉旗（成都）科技有限公司 | A kind of data storage of power down safety and method for quickly retrieving |
| CN108108413B (en) * | 2017-12-12 | 2022-04-26 | 宁波三星医疗电气股份有限公司 | Method and system for automatically generating data pointer based on stored data |
| CN108664578B (en) * | 2018-05-03 | 2020-10-20 | 中北大学 | File circulating storage method and system |
| CN108804346A (en) * | 2018-05-30 | 2018-11-13 | 广东思诺伟智能技术有限公司 | A kind of method that battery SOC data are stored in FLASH memory |
| CN109002399B (en) * | 2018-07-09 | 2021-05-18 | 北京智芯微电子科技有限公司 | Method for recording embedded equipment event |
| CN109213448B (en) * | 2018-08-30 | 2022-04-05 | 东信和平科技股份有限公司 | Method, device, equipment and storage medium for erasing and writing data of smart card |
| CN111324549B (en) * | 2018-12-14 | 2022-07-01 | 北京兆易创新科技股份有限公司 | Memory and control method and device thereof |
| CN111078136B (en) * | 2019-10-22 | 2023-05-05 | 力高(山东)新能源技术股份有限公司 | Method for preventing flash life reduction caused by BMS dynamic data storage |
| CN110795040A (en) * | 2019-10-28 | 2020-02-14 | 浙江互灵科技有限公司 | Simple file management system and implementation method thereof |
| CN112860589A (en) * | 2019-11-12 | 2021-05-28 | 广东菲氏科技有限公司 | Data writing method based on flash memory |
| CN111258982B (en) * | 2019-12-26 | 2023-10-03 | 浙江零跑科技股份有限公司 | Historical data storage management method |
| CN111208950B (en) * | 2020-01-15 | 2023-07-14 | 山西银河电子设备厂 | Method for improving NORFLASH service cycle based on singlechip |
| CN112114757B (en) * | 2020-09-28 | 2024-04-05 | 北京百度网讯科技有限公司 | Storage method and system in object storage system, computing device and medium |
| CN113132661B (en) * | 2021-03-11 | 2022-04-12 | 深圳市阿达视高新技术有限公司 | Video data storage method and device, storage medium and camera equipment |
| CN113157212B (en) * | 2021-04-23 | 2023-02-28 | 歌尔股份有限公司 | Flash storage method and device, intelligent wearable device and storage medium |
| CN113885791B (en) * | 2021-09-08 | 2024-07-16 | 北京维普无限智能技术有限公司 | Data writing method, data reading method and data writing device for Flash memory |
| CN113934370B (en) * | 2021-09-09 | 2022-06-28 | 珠海海奇半导体有限公司 | Wear-leveling method, device and medium for nonvolatile memory |
| CN114816581B (en) * | 2022-05-20 | 2023-06-02 | 中国电子科技集团公司第三十研究所 | ARM processor-based non-operating system algorithm dynamic loading method |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101127004A (en) * | 2007-09-24 | 2008-02-20 | 中兴通讯股份有限公司 | System and method for accessing data on flash memory |
| CN101154447A (en) * | 2006-09-28 | 2008-04-02 | 北京握奇数据系统有限公司 | Flash memory and its control method |
| CN101419841A (en) * | 2008-12-09 | 2009-04-29 | 苏州大学 | Erasing and writing method for FLASH memory |
| CN101980177A (en) * | 2010-10-21 | 2011-02-23 | 北京握奇数据系统有限公司 | Method and device for operating Flash |
| CN102339254A (en) * | 2011-06-17 | 2012-02-01 | 杭州炬华科技股份有限公司 | Flash data storage method for intelligent electric energy meter |
| CN103399826A (en) * | 2013-08-15 | 2013-11-20 | 南京新联电子股份有限公司 | Data storage method based on NOR FLASH |
| CN103645993A (en) * | 2013-12-24 | 2014-03-19 | 飞天诚信科技股份有限公司 | Data updating method and data reading method based on large page Flash |
| CN103699341A (en) * | 2013-12-17 | 2014-04-02 | 飞天诚信科技股份有限公司 | Method for writing data into storage equipment |
| CN104090730A (en) * | 2014-07-08 | 2014-10-08 | 飞天诚信科技股份有限公司 | Method and device for conducting data reading and writing on storage device |
| CN104978148A (en) * | 2014-04-09 | 2015-10-14 | 瑞萨电子(中国)有限公司 | Data writing method and device and data reading method and device |
| EP3096221A1 (en) * | 2015-05-19 | 2016-11-23 | EMC Corporation | Method and system for storing and recovering data from flash memory |
| CN106294026A (en) * | 2016-08-19 | 2017-01-04 | 浪潮(北京)电子信息产业有限公司 | Mapping table restoration methods after a kind of solid-state disk powered-off fault and system thereof |
| CN106354662A (en) * | 2015-07-17 | 2017-01-25 | 陕西千山航空电子有限责任公司 | NAND FLASH data storage method |
| CN106502919A (en) * | 2016-10-11 | 2017-03-15 | 上海东软载波微电子有限公司 | A kind of write operation method of Flash flash memories and device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6717208B2 (en) * | 2002-06-11 | 2004-04-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Disabling flash memory to protect memory contents |
-
2017
- 2017-04-17 CN CN201710249237.7A patent/CN107168647B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101154447A (en) * | 2006-09-28 | 2008-04-02 | 北京握奇数据系统有限公司 | Flash memory and its control method |
| CN101127004A (en) * | 2007-09-24 | 2008-02-20 | 中兴通讯股份有限公司 | System and method for accessing data on flash memory |
| CN101419841A (en) * | 2008-12-09 | 2009-04-29 | 苏州大学 | Erasing and writing method for FLASH memory |
| CN101980177A (en) * | 2010-10-21 | 2011-02-23 | 北京握奇数据系统有限公司 | Method and device for operating Flash |
| CN102339254A (en) * | 2011-06-17 | 2012-02-01 | 杭州炬华科技股份有限公司 | Flash data storage method for intelligent electric energy meter |
| CN103399826A (en) * | 2013-08-15 | 2013-11-20 | 南京新联电子股份有限公司 | Data storage method based on NOR FLASH |
| CN103699341A (en) * | 2013-12-17 | 2014-04-02 | 飞天诚信科技股份有限公司 | Method for writing data into storage equipment |
| CN103645993A (en) * | 2013-12-24 | 2014-03-19 | 飞天诚信科技股份有限公司 | Data updating method and data reading method based on large page Flash |
| CN104978148A (en) * | 2014-04-09 | 2015-10-14 | 瑞萨电子(中国)有限公司 | Data writing method and device and data reading method and device |
| CN104090730A (en) * | 2014-07-08 | 2014-10-08 | 飞天诚信科技股份有限公司 | Method and device for conducting data reading and writing on storage device |
| EP3096221A1 (en) * | 2015-05-19 | 2016-11-23 | EMC Corporation | Method and system for storing and recovering data from flash memory |
| CN106354662A (en) * | 2015-07-17 | 2017-01-25 | 陕西千山航空电子有限责任公司 | NAND FLASH data storage method |
| CN106294026A (en) * | 2016-08-19 | 2017-01-04 | 浪潮(北京)电子信息产业有限公司 | Mapping table restoration methods after a kind of solid-state disk powered-off fault and system thereof |
| CN106502919A (en) * | 2016-10-11 | 2017-03-15 | 上海东软载波微电子有限公司 | A kind of write operation method of Flash flash memories and device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107168647A (en) | 2017-09-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107168647B (en) | FLASH data read-write method and system | |
| US10915475B2 (en) | Methods and apparatus for variable size logical page management based on hot and cold data | |
| US10572391B2 (en) | Methods and apparatus for implementing a logical to physical address mapping in a solid state drive | |
| US11232041B2 (en) | Memory addressing | |
| US9229876B2 (en) | Method and system for dynamic compression of address tables in a memory | |
| US9830098B1 (en) | Method of wear leveling for data storage device | |
| CN112765006B (en) | Solid state disk log generation method and solid state disk thereof | |
| US20090198875A1 (en) | Data writing method for flash memory, and controller and system using the same | |
| US20140297921A1 (en) | Method of Partitioning Physical Block and Memory System Thereof | |
| US20130060991A1 (en) | Solid state drive and garbage collection control method thereof | |
| JP2009099149A (en) | Control method of adaptive hybrid density memory storage device, and adaptive hybrid density memory storage device | |
| US20130054878A1 (en) | Solid state drive and wear-leveling control method thereof | |
| US9176866B2 (en) | Active recycling for solid state drive | |
| US20130124782A1 (en) | Solid state drive and method for constructing logical-to-physical table thereof | |
| US20140328127A1 (en) | Method of Managing Non-Volatile Memory and Non-Volatile Storage Device Using the Same | |
| US20180143886A1 (en) | Method for Rebuilding a Mapping Table of a Solid State Disk | |
| US20140223075A1 (en) | Physical-to-logical address map to speed up a recycle operation in a solid state drive | |
| CN104239229A (en) | Data storage device and data reading method for flash memory | |
| CN104866428A (en) | Data access method and data access device | |
| US10168951B2 (en) | Methods for accessing data in a circular block mode and apparatuses using the same | |
| CN106445401B (en) | Table updating method, memory storage device and memory control circuit unit | |
| CN107045423B (en) | Memory device and data access method thereof | |
| CN113590505B (en) | Address mapping method, solid state disk controller and solid state disk | |
| US20130326120A1 (en) | Data storage device and operating method for flash memory | |
| US9304906B2 (en) | Memory system, controller and control method of memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |