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CN107112265A - 基板传送机构 - Google Patents

基板传送机构 Download PDF

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CN107112265A
CN107112265A CN201580072859.6A CN201580072859A CN107112265A CN 107112265 A CN107112265 A CN 107112265A CN 201580072859 A CN201580072859 A CN 201580072859A CN 107112265 A CN107112265 A CN 107112265A
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pedestal
support
substrate
transport mechanism
substrate support
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CN107112265B (zh
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石井才人
穆罕默德·图格鲁利·萨米尔
刘树坤
杰弗里·托宾
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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    • C30—CRYSTAL GROWTH
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    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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Abstract

在一个实施方式中，一种基板支撑组件包括：基座，所述基座用于支撑基板；和支撑传送机构，所述支撑传送机构耦接于所述基座，所述支撑传送机构具有一表面，所述表面用于支撑所述基板的周围边缘，所述支撑传送机构相对于所述基座的上表面为可移动的。

Description

基板传送机构
技术领域
在此所公开的实施方式通常涉及将基板(例如半导体基板)传送进入处理腔室或从处理腔室传送出来的装置和方法。
背景技术
在基板(例如半导体基板)上制造电子器件的过程中，基板经历许多热处理。热处理通常在预定的处理腔室中执行，在所述处理腔室中材料会被沉积或移除。这样的处理包含外延沉积、化学气相沉积(CVD)、等离子体增强化学气相沉积(PECVD)、蚀刻、退火以及类似处理。
基板通常被机械手器件传送到设置于处理腔室中的基板支撑件上的升降销上。升降销通常在离散的位置与基板的背侧(非沉积接受侧)相接触而与基板具有最小接触面积。然而，即便升降销提供与基板的背侧的最小接触面积，升降销与基板之间往往还会承受摩擦力。摩擦力可产生刮痕或另在基板的背侧上形成标记。所述刮痕和标记依不同的严重程度可影响一个或多个形成于基板上的电子器件的操作。电子器件的刮痕导致基板产率下降。
因此，需要经改良的基板传送机构来最小化或消除基板的刮痕。
发明内容
在一个实施方式中，一种基板支撑组件包括：基座，所述基座用于支撑基板；和支撑传送机构，所述支撑传送机构耦接于基座，所述支撑传送机构具有一表面，所述表面用于支撑基板的周围边缘，所述支撑传送机构相对于基座的上表面可移动。
在另一个实施方式中，一种基板支撑组件包括：基座；和支撑传送机构，所述支撑传送机构具有用于支撑基板的表面，所述支撑传送机构相对于基座的上表面可移动且适于嵌埋(nest)于凹槽内，所述凹槽形成于所述基座内。
在另一个实施方式中，一种基板支撑组件包括：基座，所述基座用于支撑基板，所述基座具有凹表面和一个或多个索引特征，所述一个或多个索引特征从所述基座延伸；和支撑传送机构，所述支撑传送机构耦接于基座，所述支撑传送机构具有用于支撑基板的周围边缘的表面，所述支撑传送机构相对于基座的上表面可移动，其中所述支撑传送机构包含：盘形主体；环形部，所述环形部从盘形主体延伸；和凹穴(pocket)，所述凹穴形成于环形部内以接收基座的所述索引特征的一个。
附图说明
以上简要总结的本公开内容的上述特征可被详细的理解的方式、对本公开内容更特定的描述可以通过参考实施方式获得，所述实施方式中的一些在附图中示出。但是，应当注意的是，附图仅示出了本公开内容的典型实施方式并因此不视为对本公开内容的范围的限制，因为本公开内容可允许其他等效的实施方式。
图1是处理腔室的局部截面图。
图2A是可被用于图1的处理腔室中的基板支撑组件的一个实施方式的局部等距视图。
图2B是图2A的基板支撑组件的等距视图。
图2C是图2B的环件和基座的沿着2C-2C线的截面图。
图3A是可被用于图1的处理腔室中的基板支撑组件的另一个实施方式的局部等距视图。
图3B是图3A的基板支撑组件的等距视图。
图3C是图3B的可拆卸支撑板和基座的沿着3C-3C线的截面图。
图4A～5B是可被用于图1的处理腔室中的基板支撑组件的另一个实施方式的各种视图。
图6A是可被用于图1的处理腔室中的基板支撑组件的一个实施方式的局部等距视图。
图6B是图6A的基板支撑组件的等距视图。
图6C是图6B的基座和一个升降销的放大视图。
图7A和7B是可被用于图1的处理腔室中的基板支撑组件的其他实施方式的局部等距视图。
为了促进理解，已在尽可能的情况下使用相同的参考数字来指示附图中共通的相同元件。可了解到的是，一个实施方式的元件和特征可有利地并入其他实施方式中，而无需赘述。
具体实施方式
在此所公开的实施方式通常涉及用于将基板(例如半导体基板)传送进入处理腔室或从处理腔室传送出来的装置和方法。基板支撑组件具有基座且所公开的支撑传送机构会最小化或消除升降销和基板之间的接触。所减少的升降销与基板之间的接触可减少基板上的刮痕，这最小化了颗粒且可改善产率。
各种各样的处理腔室可经修改而包含在此所述的实施方式。在一个实施方式中，大气压化学气相沉积(CVD)腔室包含在此所述的实施方式。CVD的一个实例为用于大气压CVD系统的外延(EPI)式系统，外延(EPI)式系统可获得自总部设于美国加州圣克拉拉市的应用材料公司。系统为一种全自动半导体制造系统，且使用单晶片、多腔室、模块设计而可容纳宽泛种类的晶片尺寸。除CVD腔室外，多腔室可包括预清洁腔室、晶片取向器腔室、冷却腔室以及独立操作的负载锁定腔室。在此所示的CVD腔室示意性示出于图1中为一个实施方式且并非意图成为所有可能的实施方式的限制。可以设想到其他大气压或接近大气压的CVD腔室(包括来自其他制造商的腔室)可根据在此所述的实施方式来使用。
图1为根据一个实施方式的处理腔室100的局部截面图。处理腔室100包含腔室主体102、支撑系统104以及腔室控制器106。腔室主体102包含上部112与下部114。上部112包含在腔室主体102内介于天花板116与基板125的上表面之间的区域。下部114包含在腔室主体102内介于圆顶130与基板125的底部之间的区域。沉积处理一般发生在上部112内的基板125的上表面上。
上衬垫118被设置于上部112内且被用以防止至腔室部件上的不期望的沉积。上衬垫118位于邻近于上部112内的环件123处。处理腔室100包含多个加热源(例如灯具135)，所述多个加热源适于将热能提供至位于处理腔室100内的部件。例如，灯具135可适于将热能提供至基板125和环件123。圆顶130和天花板116可由透光材料(例如石英)所形成以促进热辐射通过圆顶130和天花板116。
腔室主体102还包含形成于腔室主体102内的进气口120和排气口122。进气口120可适于将处理气体150提供进入腔室主体102的上部112，而排气口122可适于将处理气体150从上部112排出而进入排气系统160。在这样的方式下，处理气体150可平行于基板125的上表面流动。在一个实施方式中，处理气体150在基板125上(由灯具135所促进)的热分解会在基板125上形成外延层。
基板支撑组件132位于腔室主体102的下部114。基板支撑组件132包含基座131，基座131被绘示成将基板125和环件123支撑于处理位置中。基板支撑组件132包含多个支撑销121和多个升降销133。升降销133可由支撑臂134垂直地致动且在一个实施方式中适于接触基座131的底部以将基板125从处理位置(如所示)抬升至基板传送位置。基板传送位置为一个这样的位置，在所述位置上机械手器件(机械臂或端部执行器)可被插入通过可封开口138并进入基座131(或基板支撑组件132的其他部分)。在其他实施方式中(描述于随后附图中)，基板支撑组件132可将基板125传送提供至机械叶片或不同地从机械叶片传送基板125。传送基板125的其他实施方式会被完成而不具有升降销133与基板125或支撑销121与基板125之间的接触。基板支撑组件132的部件可由碳纤维、石英、碳化硅、涂覆有碳化硅的石墨或其他合适的材料所制造。基板支撑组件132可包含或耦接至轴组件136，轴组件136允许支撑销121与升降销133分开地移动。在一个实施方式中，轴组件适于绕其纵向轴旋转。在一些实施方式中，基板支撑组件132包含基座组件137，基座组件137包含基座131和环件123(或如下所述的其他支撑传送机构)，以及支撑臂134的部分、支撑销121和/或升降销133。
环件123可被设置成邻近于下衬垫140，下衬垫140耦接至腔室主体102。环件123可被设置于腔室主体102的内部容积的周围且当基板125在处理位置时包围基板125。环件123与基座131可由热稳定材料(例如碳纤维、碳化硅、石英或涂覆有碳化硅的石墨)所形成。环件123(与基座131结合)可将上部112的处理容积分开。当基板125位于环件123附近时，环件123可提供经引导的气体流通过上部112。
支撑系统104包含部件，所述部件被用以执行并监视预决定处理(例如在处理腔室100中的外延薄膜的成长和基板支撑组件132的致动)。在一个实施方式中，支撑系统104包含一个或多个气体面板、气体分配导管、电源以及处理控制仪器。腔室控制器106耦接于支撑系统104且适于控制处理腔室100以和支撑系统104。在一个实施方式中，腔室控制器106包含中央处理单元(CPU)、内存以及支持电路。驻留在腔室控制器106中的指令可被执行以控制处理腔室100的操作。处理腔室100适于执行一个或多个薄膜的形成或在处理腔室100中的沉积处理。例如碳化硅外延成长处理可被执行于处理腔室100内。可以预期的是，其他处理可被执行于处理腔室100内。
图2A为可用以当作图1的处理腔室100中的基板支撑组件132的基板支撑组件200的一个实施方式的局部等距视图。基板支撑组件200包含基座组件137，基座组件137包含作为支撑传送机构的基座131和环件123。然而，在这个实施方式中，基座131经调整尺寸以实质上与环件123的直径相匹配。基板125(经局部性显示)在其边缘处由环件123支撑。基板支撑组件200还包含升降销205(仅一个示处于此视图中)，升降销205可为图1所述的支撑销121。基板支撑组件200被示出于基板传送位置中，在所述基板传送位置中环件123与基座131间隔开来。
升降销205延伸通过基座131中的开口210(仅一个示处于此视图中)且在当轴组件136(第1图所示)致动时升降销205与环件123的下侧在升降点215处接触(以虚线所示)。环件123包含上表面202与内部边缘区域220，内部边缘区域220在处理和传送期间支撑基板125的周围边缘。升降销205被致动以将环件123举起而距基座131一段距离以便机械手器件225可被插入到基板125和基座131之间(如图2A所示)。环件123包含第一间隙230A以和与第一间隙230A相对的第二间隙230B。第一间隙230A和第二间隙230B的每一个经调整尺寸以接收机械手器件225的一部分并允许机械手器件225被置于基板125下方。在一些实施方式中，第一间隙230A为通槽(through-slot)，所述通槽将环件123分开而成为第一段232A和第二段232B。在一些实施方式中，第二槽230B可为局部槽(partial slot)，所述局部槽具有介于第一段232A和第二段232B之间的连接部235。
基座131还可包含邻近于凸部242的凹表面240，在凸部242处环件123可被接收或与基座131嵌合在一起。凸部242可根据第一间隙230A的尺寸(即长度和/或宽度)来调整尺寸且凹表面240可根据环件123的厚度而凹陷至一深度。在一些实施方式中，当基座131和环件123位于处理位置时(图2B所示)，环件123的上表面与基座131的凸部242的上表面共平面。凸部242还可包含大于凹表面240的直径的直径。基座131可包含一个或多个索引特征245，所述一个或多个索引特征245从基座131(从凹表面240)的表面延伸。索引特征245可为截头圆锥体的形状，并且用于当环件123与基座131彼此相邻(即在处理位置)时对准环件123。
图2B为图2A的基板支撑组件200的等距视图，其中基座131与环件123彼此相邻。基座131可包含凹表面250，凹表面250从邻近于环件123的内部边缘区域220的位置逐渐向内(径向地)弯曲至基座131的中心。
图2C为图2B的环件123与基座131沿2C-2C线的截面图。所示为从基座131的凹表面240延伸的索引特征245。索引特征245可被接收进形成于环件123的凹穴255。
图2A～2C中所示和所描述的实施方式防止升降销205之间的接触，因为基板125受环件123支撑且环件123仅与基板125在基板125边缘处接触。
图3A为基板支撑组件300的另一个实施方式的局部等距视图，其中基板支撑组件300被当作为图1的处理腔室100的基板支撑组件132。基板支撑组件300包含基座组件137，基座组件137包含基座131和可拆卸支撑板305而作为支撑传送机构。基板125(局部地示出)由可拆卸支撑板305所支撑，在可拆卸支撑板305中机械手器件225的端执行器310可接触基板125的边缘以促进基板125的传送。可拆卸支撑板305可由热稳定材料(例如碳纤维、碳化硅、石英或涂覆有碳化硅的石墨)所形成。
在此实施方式中，当轴组件136(在图1中示出)被致动时，升降销(可为图1所述的升降销133或支撑销121(在此视图中未示出))在升降点215处(以虚线示出)接触可拆卸支撑板305的背侧。升降销将可拆卸支撑板305相对于基座131举起或下降，基座131将基板125举起或下降而无基板125与升降销之间的接触。在图3A所示的位置，可拆卸支撑板305可移动至一位置，在所述位置端执行器310可在基板125与基座131之间穿过，且基板125可基于升降销的运动而被从可拆卸支撑板305取下或被置于可拆卸支撑板305上。
根据此实施方式，基座131包含两个凹表面240，在所述凹表面240中，可拆卸支撑板305可被接收或与基座131嵌合在一起。可拆卸支撑板305包含环形部分315，环形部分315从盘形主体320延伸。凹表面240正对着彼此且经调整尺寸以接收每个环形部分315。基座131还包含一个或多个索引特征245，索引特征245与可拆卸支撑板305接口连接。
在处理位置中(在图3B中示出)，环形部分315的上表面325和基座131的上表面330为共平面。而且，可拆卸支撑板305和基座131两者均分别包含内部边缘区域330A和330B。在处理期间内部边缘区域330A与330B支撑基板125的周围边缘。
图3B为图3A的基板支撑组件300的等距视图，其中基座131与可拆卸支撑板305彼此相邻。可拆卸支撑板305可包含凹表面335，凹表面335从邻近于可拆卸支撑板305的内部边缘区域330A和330B的位置渐渐地向内(径向地)弯曲至可拆卸支撑板305的中心。
图3C为图3B的可拆卸支撑板305和基座131沿3C-3C线的截面图。所示为从基座131的凹表面240延伸的索引特征245。索引特征245可被接收在形成于基座131中的凹穴340中。
图3A-3C所示和所述的实施方式可防止升降销之间的接触，因为在传送期间基板125受可拆卸支撑板305支撑且可拆卸支撑板305仅在基板125的边缘处接触基板125。
图4A～5B为被当作图1的处理腔室100内的基板支撑组件132的基板支撑组件400的另一个的实施方式的各种视图。图4A为基板支撑组件400的等距俯视图且图4B为图4A的基板支撑组件400的等距仰视图。基板支撑组件400包含基座组件137，基座组件137包含基座131和双重的环件段405，双重的环件段405可被选择性地从基座131拆卸下来。在此实施方式中，环件段405为支撑传送机构。图4A和4B图中的基板支撑组件400的位置为图5A和5B中所示的处理位置和传送位置。基板未示出以便更清楚地显示基板支撑组件400。
基座组件137还包含耦接于轴组件136的第一轴420A的多个第一支撑臂410。多个第一支撑臂410的每一个耦接于环件段405。基座组件137还包含多个第二支撑臂415，第二支撑臂415耦接于轴组件136的第二轴420B。第二支撑臂415耦接于基座131。第一轴420A和第二轴420B的至少一个可独立于另一个而运动。
在处理位置中，环件段405的上表面425和基座131的上表面430为共平面。而且，环件段405和基座131两者均分别包含内部边缘区域435A和435B。在处理和传送期间内部边缘区域435A和435B支撑基板125的周围边缘。
在一些实施方式中，基座131可包含凹表面440，凹表面440从分别邻近于环件段405和基座131的内部边缘区域435A与435B的位置逐渐向内(径向地)弯曲至基座131的中心。
图5A和5B示出图4A和4B的在传送位置的基板支撑组件400。图5A为基板支撑组件400的等距俯视图且图5B为图5A的基板支撑组件400的等距仰视图。基板125受环件段405所支撑而局部地示出于图5A中。
在一个操作的实例中，第一轴420A可以在Z方向上移动而第二轴420B则是静止，这样造成环件段405与基座131的平面相隔开。在另一个的操作的实例中，第二轴420B可以在Z方向上移动而第一轴420A则为静止，这样造成基座131与环件段405的平面相隔开。在其他实例中，第一轴420A和第二轴420B两者均可以在Z方向上以相反方向移动以将环件段405与基座131分隔开。在任何情况下，基板125(由环件段405的内部边缘区435A支撑在基板125的边缘上)被升举而与基座131分开。环件段405可与基座131间隔开使得机械手器件225可在基板125的下表面和基座131的上表面之间通过。基板125可基于第一轴420A和第二轴420B的一个或两者的移动而从环件段405被取下或被置于环件段405上，这导致了环件段405和基座131的相对运动。
图6A为可被用作图1的处理腔室100中的基板支撑组件132的基板支撑组件600的一个实施方式的局部等距视图。基板支撑组件600包含基座组件137，基座组件137包含基座131和多个升降销605而作为支撑传送机构。升降销605的每一个被设置于形成于基座131中的开口610中。升降销605的每一个可包含喇叭头615，在处理和传送处理期间，喇叭头615会促进支撑基板125的周围边缘。喇叭头615还可被调整尺寸成大于开口610的直径使得喇叭头615将升降销605维持在开口610中。因此，当基板支撑组件600在处理位置时(示出于图6B中)，升降销605可悬于基座131。在一个实施方式中，升降销605如所示和所描述的为自由浮动，但在其他实施方式中，升降销605可耦接于升降臂(例如图1中所示的支撑销121或升降销133)。升降销605包含可移动地设置于开口610中的轴612。在一些实施方式中，轴612包含索引特征617(可为槽或楔(key)，或多边形形状)，索引特征617防止了升降销605绕着升降销605的纵向轴旋转。基座131的开口610可以包括槽618，槽618可与索引特征617接口连接。
图6B为图6A的基板支撑组件600的等距视图，示出在处理位置的基座131和升降销605。基座131可包含内部边缘区域620，在处理期间内部边缘区域620支撑基板(未示出)的周围边缘。基座131可包含凹表面625，凹表面625从邻近于基座131的内部边缘区域620的位置逐渐地向内(径向地)弯曲而至基座131的中心。
图6C为图6B的基座131和一个升降销605的放大视图。在一个实施方式中，升降销605的喇叭头615可包含第一倾斜表面630，第一倾斜表面630和基座131的内部边缘区域620的坡度或轮廓相匹配。在一些实施方式中，升降销605的喇叭头615可包含第二倾斜表面635，第二倾斜表面635和基座131的凹表面625的轮廓相匹配。然而，在其他的实施方式中，升降销605的喇叭头615为平坦或平面的。在一些实施方式中，升降销605的喇叭头615包含台阶或肩部640，台阶或肩部640从喇叭头615的上表面645过度至第一倾斜表面630。上表面645可与基座131的上表面650共平面。上表面650可为平面。在一些实施方式中，基座131还包含台阶或肩部655，台阶或肩部655与肩部640相匹配。
图7A和7B为被用作图1的处理腔室100中的基板支撑组件132的基板支撑组件700的另一个的实施方式的局部等距视图。基板支撑组件700包含基座组件137，基座组件137包含基座131和可拆卸支撑板705而作为支撑传送机构。在图7A中示出的基板支撑组件700位于传送位置而在图7B中示出的基板支撑组件700则位于处理位置。
在此实施方式中，基座131包含周围边缘710和由周围边缘710所外接的凹部715。凹部715可被调整尺寸以接收可拆卸支撑板705使得可拆卸支撑板705与基座131嵌合在一起而在处理位置。基板支座组件700还包含一个或多个索引特征720以促进可拆卸支撑板705与基座131对准。索引特征720包含形成于可拆卸支撑板705的槽725和形成于基座131上的肩部730。肩部730可从基座131的周围边缘710径向向内地延伸且槽725可从可拆卸支撑板705的外部边缘735径向向内延伸。如在图7B中所示，索引特征720促进可拆卸支撑板705在处理位置与基座131对准。基板未示出在图7B中以便示出基板支撑组件700的更多细节。
可拆卸支撑板705使用升降销(未示出)而与基座131相间隔，升降销在升降点740接触可拆卸支撑板705的背侧。升降销可为图1中所示的升降销133且可被设置成通过基座131中的开口(未示出)以接触可拆卸支撑板705的背侧。如图7A中所示，可拆卸支撑板705(与可拆卸支撑板705上的基板125一起)可与基座131相间隔开而位于一位置，在所述位置机械手器件225可在可拆卸支撑板705的下表面与基座131的上表面之间通过。基板125与可拆卸支撑基板705接着可被传送至升降销上或被传送离开升降销。
可拆卸支撑板705可被用作基板载体，所述基板载体将基板125运送通过基板处理工具或处理系统。例如，可拆卸支撑板705可将基板125从锁定腔室(未示出)传送进入处理腔室或从处理腔室(例如图1所示的处理腔室100)传送出而返回进入锁定腔室。可拆卸支撑板705可被塑形以将基板125在前开式标准舱(FOUP(未示出))与可拆卸支撑板705之间传送。例如，用于将基板在可拆卸支撑板705与FOUP之间传送的机械手器件可接触基板的边缘。在这个例子中，可拆卸支撑板705可包含断开区，断开区位于可拆卸支撑板705的外部区域735上或附近。在一个实例中，槽725可被用于这个目的。可拆卸支撑板705可由热稳定材料(例如碳纤维、碳化硅、石英或涂覆有碳化硅的石墨)所形成。
可拆卸支撑板705可包含内部边缘区域745，内部边缘区域745在处理期间支撑基板125的周围边缘。可拆卸支撑板705可包含凹表面750，凹表面750从邻近于可拆卸支撑板705的内部边缘区域745的位置逐渐地向内(径向地)弯曲而至可拆卸支撑板705的中心。
虽然前述内容涉及本公开内容的实施方式，但是应当理解的是，在不脱离本公开内容的基本范围的情况下，可以设计其他和进一步实施方式，且本公开内容的范围由以下的权利要求所确定。

Claims (15)

1.一种基板支撑组件，所述基板支撑组件包括：
基座，所述基座用于支撑基板；和
支撑传送机构，所述支撑传送机构耦接于所述基座，所述支撑传送机构具有一表面，所述表面用于支撑所述基板的周围边缘，所述支撑传送机构相对于所述基座的上表面为可移动的。
2.如权利要求1所述的基板支撑组件，其中所述支撑传送机构包含环件。
3.如权利要求2所述的基板支撑组件，其中所述环件具有第一间隙。
4.如权利要求3所述的基板支撑组件，其中所述环件具有第二间隙，所述第二间隙与所述第一间隙相对。
5.如权利要求3所述的基板支撑组件，其中所述基座包含一凹部，所述凹部经调整尺寸以接收所述环件。
6.如权利要求1所述的基板支撑组件，其中所述支撑传送机构包含多个环件段。
7.如权利要求6所述的基板支撑组件，其中所述基座包含凹部，所述凹部经调整尺寸以接收所述多个环件段。
8.如权利要求1所述的基板支撑组件，其中所述支撑传送机构包含多个升降销，所述多个升降销可移动地设置于形成于所述基座中的开口中。
9.如权利要求8所述的基板支撑组件，其中所述多个升降销的每一个包含喇叭头，所述喇叭头设置于轴上。
10.如权利要求9所述的基板支撑组件，其中所述喇叭头包含倾斜表面。
11.一种基板支撑组件，所述基板支撑组件包括：
基座，所述基座用于支撑基板，所述基座具有凹表面和一个或多个从所述基座延伸的索引特征；和
支撑传送机构，所述支撑传送机构耦接至所述基座，所述支撑传送机构具有用于支撑基板的周围边缘的表面，所述支撑传送机构相对于所述基座的上表面为可移动的，其中所述支撑传送机构包含：
盘型主体；
环形部，所述环形部从所述盘形主体延伸；和
凹穴，所述凹穴形成在所述环形部中以接收所述基座的所述索引特征的一个。
12.如权利要求11所述的基板支撑组件，其中所述支撑传送机构包含环件。
13.如权利要求11所述的基板支撑组件，其中所述支撑传送机构包含多个环件段。
14.如权利要求11所述的基板支撑组件，其中所述支撑传送机构包含多个升降销，所述多个升降销可移动地设置在形成于所述基座中的开口中。
15.如权利要求14所述的基板支撑组件，其中所述升降销的每一个包含喇叭头，所述喇叭头设置于轴上。
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