CN107039494A - Organic light-emitting display device and its manufacture method - Google Patents
Organic light-emitting display device and its manufacture method Download PDFInfo
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- CN107039494A CN107039494A CN201611153116.4A CN201611153116A CN107039494A CN 107039494 A CN107039494 A CN 107039494A CN 201611153116 A CN201611153116 A CN 201611153116A CN 107039494 A CN107039494 A CN 107039494A
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 5
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Disclose a kind of organic light-emitting display device and its manufacture method.The organic light-emitting display device may include：Substrate；Anode electrode on the substrate；Organic luminous layer on the anode electrode；Cathode electrode on the organic luminous layer；The auxiliary electrode being connected with the cathode electrode；The first dyke on the upper surface of the auxiliary electrode；And the second dyke between the auxiliary electrode and the anode electrode, wherein described second dyke with the first dyke identical material by forming, and first dyke and second dyke are separated from one another, the width of the upper surface of wherein described first dyke is more than the width of the lower surface of first dyke, and clearance space of the cathode electrode between first dyke and second dyke is connected with the auxiliary electrode.
Description
The cross reference of related application
This application claims the korean patent application No.10-2015-0181241 submitted on December 17th, 2015 rights and interests,
The patent application is combined here, as illustrating completely herein by quoting.
Technical field
Embodiments of the present invention are related to a kind of organic light-emitting display device, more particularly to a kind of organic hair of top emission type
Electro-optical display device and its manufacture method.
Background technology
There is low-power consumption, rapid response speed, height as organic light emitting display (OLED) device of self-emission display apparatus
The advantage of luminous efficiency, high brightness and wide viewing angle.
According to the direction for the light launched from organic light emitting apparatus, OLED device can be generally divided into top emission type and bottom
Light emitting-type.In the situation of bottom emission type, circuit arrangement is provided between luminescent layer and image display surface, thus due to
Circuit arrangement, it is possible to decrease aperture opening ratio.Meanwhile, in the situation of top emission type, do not have between luminescent layer and image display surface
There is setting circuit arrangement, thus can improve aperture opening ratio.
Fig. 1 is the profile of the top emission type OLED device of correlation technique.
As shown in fig. 1, including active layer 11, gate insulating film 12, gate electrode 13, interlayer insulating film 14, source electrode electricity
The tft layer T of pole 15 and drain electrode 16 is set on the substrate 10, and then passivation layer 20 and planarization layer 30 be in order
It is arranged on tft layer T.
In addition, anode electrode 40 and auxiliary electrode 50 are arranged on planarization layer 30.It is for subtracting to set auxiliary electrode 50
The resistance of small cathode electrode 90.In the situation of top emission type, the light launched from organic luminous layer 80 passes through cathode electrode 90.
Due to this reason, cathode electrode 90 is formed by transparent conductive material, and this causes resistance increase therein.In order to reduce cathode electrode
90 resistance, cathode electrode 90 is connected with auxiliary electrode 50.
Dyke 60 is set on anode electrode 40 and auxiliary electrode 50, to limit pixel region.In addition, organic luminous layer 80
It is arranged in the pixel region limited by dyke 60.
If auxiliary electrode 50 is covered by organic luminous layer 80, the electrical connection between cathode electrode 90 and auxiliary electrode 50
Become difficult.Thus, in order to prevent auxiliary electrode 50 from being covered by organic luminous layer 80, lattice is set on auxiliary electrode 50
70.Lattice 70 is separated with dyke 60, and thus auxiliary electrode 50 and cathode electrode 90 are between lattice 70 and dyke 60
Space be connected to each other.
Lattice 70 may include the first lattice 71 and the second lattice 72, and wherein lattice 70 is formed as eaves
(eaves) structure.Thus, with for operational characteristic, the organic luminous layer 80 with outstanding straightness is hindered by lattice 70
Gear, can prevent organic luminous layer 80 from penetrating into the space between lattice 70 and dyke 60.For operational characteristic
Cathode electrode 90 with poor straightness is penetrated into the space between lattice 70 and dyke 60, then with auxiliary electrode 50
Connection.
In the situation of the top emission type OLED device of correlation technique, in order between cathode electrode 90 and auxiliary electrode 50
Electrical connection lattice 70 is additionally set.Accordingly, it would be desirable to which the extra mask process performed for forming lattice 70, thus leads
Cause the reduction of yield.
The content of the invention
Therefore, embodiments of the present invention aim to provide a kind of limitation substantially overcomed due to correlation technique and shortcoming
Caused by one or more problems top emission type organic light-emitting display device and its manufacture method.
The one side of embodiment of the present invention, which is aimed to provide, a kind of to be not necessarily formed extra lattice and can be realized as the moon
The top emission type organic light-emitting display device and its manufacture method of electrical connection between pole electrode and auxiliary electrode.
Part is listed to the attendant advantages and feature of embodiment of the present invention, these advantages and features in the following description
A part according to being will become obvious to research hereafter for one skilled in the art or can be by this hair
The implementation of bright embodiment is understood.Can be realized by the structure specifically noted in specification, claims and accompanying drawing and
Obtain these purposes and other advantages of embodiment of the present invention.
In order to realize these and other advantage, and according to the intention of embodiment of the present invention, such as embody and summarize herein
Ground description there is provided a kind of organic light-emitting display device, it may include：Substrate；Anode electrode and the moon on the substrate
Pole electrode；It is arranged on the organic luminous layer between the anode electrode and the cathode electrode；It is connected with the cathode electrode
Auxiliary electrode；The first dyke on the upper surface of the auxiliary electrode；With positioned at the auxiliary electrode and the anode electricity
The second dyke between pole, wherein second dyke with the first dyke identical material by forming, and described first
Dyke and second dyke are separated from one another, wherein the width of the upper surface of first dyke is more than first dyke
The width of lower surface, and clearance space and institute of the cathode electrode between first dyke and second dyke
State auxiliary electrode connection.
There is provided a kind of organic light-emitting display device in the other side of embodiment of the present invention, it may include：Set
Organic luminous layer on the first pixel electrode；It is arranged on the second pixel electrode on the organic luminous layer；With described second
The auxiliary electrode of pixel electrode connection；It is arranged on the first dyke on the auxiliary electrode；Including Part I and Part II
The second dyke, wherein the Part I and Part II of second dyke be arranged on the both sides of first dyke and
On the two ends of the auxiliary electrode；And positioned at first dyke and second dyke Part I or Part II it
Between clearance space, wherein the auxiliary electrode is in the Part I or second positioned at first dyke and second dyke
Second pixel electrode is connected in clearance space between part.
There is provided a kind of method for manufacturing organic light-emitting display device in the another aspect of embodiment of the present invention,
It may include：Anode electrode and auxiliary electrode are set on substrate；First dyke is set on the auxiliary electrode, and described
Second dyke is set between auxiliary electrode and the anode electrode, wherein second dyke is separated with first dyke；
Organic luminous layer is set on the anode electrode；Cathode electrode is set with the organic luminous layer, wherein described first
The width of the upper surface of dyke is more than the width of the lower surface of first dyke, and the cathode electrode is via described first
Clearance space between dyke and second dyke is connected with the auxiliary electrode.
It should be appreciated that the description of substantially property and following detaileds description before embodiment of the present invention be all it is exemplary with
Explanatory, it is intended to provide further explanation to claimed invention.
Brief description of the drawings
It is included to provide to embodiments of the present invention and further understands and be incorporated herein to constitute the application part
Accompanying drawing illustrate embodiments of the present invention, and be used for together with specification the principle of explaining embodiment of the present invention.Attached
In figure：
Fig. 1 is the profile for the top emission type organic light-emitting display device for illustrating correlation technique；
Fig. 2 is profile of the diagram according to the organic light-emitting display device of one embodiment of the present invention；And
Fig. 3 A to 3K are diagram cuing open according to the manufacture method of the organic light-emitting display device of one embodiment of the present invention
Face figure.
Embodiment
The illustrative embodiments with detailed reference to the present invention are described now, and these embodiments are illustrated in accompanying drawing
Some examples.Make same or analogous part is designated by like reference numerals throughout in whole accompanying drawing as much as possible.It will pass through
The following embodiments described with reference to the accompanying drawings illustrate advantages and features of the invention and its implementation.However, the present invention can be with
Implement in different forms, should not be construed as limited by embodiment listed here.And be to provide these embodiments be in order to
Make present disclosure fully and completely, and the scope of the present invention is fully passed into one of ordinary skill in the art.In addition, this hair
It is bright only to be limited by the scope of claims.
Shape, size, ratio, angle and the quantity disclosed in the accompanying drawings to describe embodiments of the present invention is only
It is example, thus the invention is not restricted to the details of diagram.Similar reference marker represents similar element in the whole text.Retouched in following
In stating, when it is determined that the detailed description to related known function or construction can unnecessarily make the emphasis of the present invention smudgy
When, the detailed description will be omitted.In the case where using "comprising" described in this application, " having " and " comprising ", it can add
Other part, except non-usage " only ".
When explaining a key element, although not clearly stating, the key element should be interpreted that including error range.
In the description of embodiment of the present invention, when a structure (for example, electrode, line, distribution, layer or contact site) is described
To be formed at the upper/lower of another structure or being formed in other structures up/down, this description should be construed to include this
Situation that a little structures are in contact with each other and the situation for being provided with the 3rd structure between them.
When describing time relationship, for example, be described as when time sequencing " ... after ", " subsequent ", " following "
" ... before " when, it may include discontinuous situation, except non-usage " just " or " direct ".
It will be appreciated that, although can be used term " first ", " second " etc. to describe various elements herein, these elements are not
It should be limited by these terms.These terms are intended merely to element being distinguished from each other out.For example, without departing substantially from the scope of the present invention
In the case of, the first element may be referred to as the second element, similarly, and the second element may be referred to as the first element.
One of ordinary skill in the art can fully understand that the feature of each embodiment of the invention can each other partially or entirely
With reference to or combination, and can technically carry out various interoperability and driving each other.Embodiments of the present invention can be independent of one another
Implement, or with complementary relation common implementing.
Hereinafter, it will be described in detail with reference to the accompanying drawings the organic light-emitting display device according to embodiment of the present invention.
Fig. 2 is profile of the diagram according to the organic light-emitting display device of one embodiment of the present invention.
As shown in Figure 2, substrate may include according to organic light emitting display (OLED) device of one embodiment of the present invention
100th, tft layer T, passivation layer 165, the first planarization layer 171, the second planarization layer 172, first anode electrode 180,
Second plate electrode 200, the first auxiliary electrode 190, the second auxiliary electrode 210, dyke 221 and 222, the and of organic luminous layer 240
Cathode electrode 250.Dyke 221 and a part of second auxiliary electrode 210 formation lattice, lattice, which has towards its basal surface, to be become
Narrow back taper, and lattice has eaves portion, and cathode electrode 250 connects in the region below the eaves portion of lattice
It is connected to the second auxiliary electrode 210.This second auxiliary electrode of part 210 can form the base portion of lattice, and dyke 221 can be formed
The top of lattice.
Substrate 100 can be formed by glass or transparent plastic, but be not limited to these materials.
Tft layer T may include active layer 110, gate insulating film 120, gate electrode 130, interlayer insulating film 140,
Source electrode 150 and drain electrode 160.
Active layer 110 is set on the substrate 100, and wherein active layer 110 is overlapped with gate electrode 130.Active layer 110 can be by
Semi-conducting material based on silicon or the semi-conducting material based on oxide are formed.Although not shown, can substrate 100 with it is active
Additional setting light shield layer between layer 110.In this case, the exterior light incided on the lower surface of substrate 100 is blocked layer
Stop so that can prevent active layer 110 from being damaged by exterior light.
Gate insulating film 120 is arranged on active layer 110.Gate insulating film 120 is by active layer 110 and gate electrode 130
It is insulated from each other.For example, gate insulating film 120 can be formed by inorganic insulating material, more particularly, gate insulating film 120 can be with
Such as single layer structure of Si oxide SiOx or silicon nitride SiNx etc inorganic insulating material or above-mentioned Si oxide SiOx
Formed with silicon nitride SiNx sandwich construction, but be not limited to these structures.
Gate electrode 130 is arranged on gate insulating film 120.Gate electrode 130 is overlapped with active layer 110, wherein grid
Dielectric film 120 is plugged between the gate electrode 130 overlapped each other and active layer 110.Gate electrode 130 can with molybdenum (Mo),
One kind for being selected among aluminium (Al), chromium (Cr), golden (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and their alloy or
The single layer structure or sandwich construction of multiple material are formed, but are not limited to these materials.
Interlayer insulating film 140 is arranged on gate electrode 130.Interlayer insulating film 140 by with the identical of gate insulating film 120
Material is formed.For example, interlayer insulating film 140 can be with such as Si oxide SiOx or silicon nitride SiNx etc inorganic insulation
The single layer structure of material or above-mentioned Si oxide SiOx and silicon nitride SiNx sandwich construction are formed, but are not limited to these
Material and structure.
Source electrode 150 and drain electrode 160 facing with each other is arranged on interlayer insulating film 140.It is exhausted in foregoing grid
The first contact hole CH1 of one end for exposing active layer 110 is provided with velum 120 and interlayer insulating film 140, and preceding
State the second contact hole that the other end for exposing active layer 110 is provided with gate insulating film 120 and interlayer insulating film 140
CH2.Source electrode 150 is connected via the second contact hole CH2 with the other end of active layer 110, and drain electrode 160 is via
One contact hole CH1 is connected with one end of active layer 110.
Source electrode 150 may include bottom source electrode 151 and top source electrode 152.
Bottom source electrode 151 is arranged between interlayer insulating film 140 and top source electrode 152, wherein bottom source electrode
Electrode 151 improves the bonding strength between interlayer insulating film 140 and top source electrode 152.In addition, bottom source electrode 151
Protect the lower surface of top source electrode 152 so that the lower surface of top source electrode 152 can be prevented to be corroded.Thus, bottom
The oxidizability of source electrode 151 can be less than the oxidizability of top source electrode 152.That is, the material of bottom source electrode 151
In corrosion resistance can better than top source electrode 152 material in corrosion resistance.Bottom source electrode 151 changes as bonding
Kind layer or inhibition of corrosion layer.Bottom source electrode 151 can be formed by the alloy MoTi of molybdenum and titanium, but be not limited to this material.
Top source electrode 152 is arranged on the upper surface of bottom source electrode 151.Top source electrode 152 can be by all
Low-resistance metal material such as copper Cu etc is formed, but is not limited to this metal material.Top source electrode 152 can be by resistance phase
Metal material less than bottom source electrode 151 is formed.In order to reduce the all-in resistance of source electrode 150, top source electrode
152 thickness is preferably greater than the thickness of bottom source electrode 151.
With with the foregoing identical mode of source electrode 150, drain electrode 160 may include bottom drain electrode 161 and top
Drain electrode 162.
Bottom drain electrode 161 is arranged between interlayer insulating film 140 and top drain electrode 162, the drain electrode of its middle and lower part
Electrode 161 improves the bonding strength between interlayer insulating film 140 and top drain electrode 162.In addition, bottom drain electrode 161
The lower surface of top drain electrode 162 is prevented to be corroded.Thus, the oxidizability of bottom drain electrode 161 can be less than top drain electrode
The oxidizability of electrode 162.That is, the corrosion resistance in the material of bottom drain electrode 161 can be better than top drain electrode 162
Material in corrosion resistance.Bottom drain electrode 161 can by with the foregoing identical material of bottom source electrode 151, i.e. molybdenum and
The alloy MoTi of titanium is formed, but is not limited to this material.
Top drain electrode 162 is arranged on the upper surface of bottom drain electrode 161.Top drain electrode 162 can by with
The foregoing identical material of top source electrode 152, such as Cu is formed, but is not limited to this material.In order to reduce drain electrode 160
All-in resistance, the thickness of top drain electrode 162 is preferably greater than the thickness of bottom drain electrode 161.
Top drain electrode 162 can be by forming with the identical material of top source electrode 152, and top drain electrode
162 can be to form with the identical thickness of top source electrode 152.Bottom drain electrode 161 can by with bottom source electrode 151
Identical material is formed, and bottom drain electrode 161 can be to form with the identical thickness of bottom source electrode 151.At this
Plant in situation, drain electrode 160 and source electrode 150 can simultaneously be manufactured by same technique.
Tft layer T structure is not limited to said structure, that is, tft layer T structurally variable for pair
It is commonly known variously-shaped for one of ordinary skill in the art.For example, accompanying drawing shows that wherein gate electrode 130 is arranged on
Top gate structure on active layer 110, but be not essential.That is, it is possible to provide wherein gate electrode 130 is arranged on active layer
The bottom grating structure of 110 lower sections.
Passivation layer 165 is arranged on tft layer T, is more specifically provided in source electrode 150 and drain electrode electricity
On the upper surface of pole 160.The protective film transistor layer T of passivation layer 165.Passivation layer 165 can be by inorganic insulating material, such as silica
Compound film SiOx or silicon nitride film SiNx are formed, but are not limited to these materials.
First planarization layer 171 is arranged on passivation layer 165.It is in order that with film to set the first planarization layer 171
The upper surface planarization of transistor layer T substrate 100.First planarization layer 171 can be by organic insulation, such as acryl
(acryl) formation such as resin, epoxy resin, phenolic resin, polyamide, polyimide resin, but be not limited to these materials
Material.
The auxiliary electrode 190 of first anode electrode 180 and first is arranged on the first planarization layer 171.That is, the first sun
The auxiliary electrode 190 of pole electrode 180 and first is formed within the same layer.The shape in the foregoing planarization layer 171 of passivation layer 165 and first
Into the 3rd contact hole CH3 having for source of exposure pole electrode 150.Source electrode 150 and first anode electrode 180 connect via the 3rd
Contact hole CH3 is connected to each other.If desired, the 3rd contact hole CH3 can expose drain electrode 160, thus the He of drain electrode 160
First anode electrode 180 can be connected to each other via the 3rd contact hole CH3.
First anode electrode 180 may include the first lower anode electrode 181, the first top anode electrode 182 and the first lid
Portion's anode electrode 183.
First lower anode electrode 181 is arranged between the top anode electrode 182 of planarization layer 171 and first, wherein the
One bottom anode electrode 181 improves the bonding strength between the top anode electrode 182 of planarization layer 171 and first.In addition, first
Lower anode electrode 181 protects the lower surface of the first top anode electrode 182, thus prevents the first top anode electrode 182
Lower surface is corroded.Thus, the oxidizability of the first lower anode electrode 181 can be less than the oxidation of the first top anode electrode 182
Degree.That is, the corrosion resistance in the material of the first lower anode electrode 181 can be better than the material of the first top anode electrode 182
Corrosion resistance in material.In addition, the first lower anode electrode 181 protects the upper surface of top source electrode 152, thus prevent
The upper surface of portion's source electrode 152 is corroded.Thus, the oxidizability of the first lower anode electrode 181 can be less than top source electrode electricity
The oxidizability of pole 152.That is, the corrosion resistance in the material of the first lower anode electrode 181 can be better than top source electrode
Corrosion resistance in 152 material.Because the first lower anode electrode 181 prevents that the upper surface of top source electrode 152 is rotten
Erosion, can set foregoing double-decker in source electrode 150.First lower anode electrode 181, which is used as bonding, improves layer or corruption
Lose trapping layer.First lower anode electrode 181 can be formed by the alloy MoTi of molybdenum and titanium, but be not limited to this material.
First top anode electrode 182 be arranged on the first lower anode electrode 181 and the first cap anode electrode 183 it
Between.First top anode electrode 182 can be formed by such as copper Cu etc low-resistance metal material, but be not limited to this metal material
Material.First top anode electrode 182 can be relatively lower than the first lower anode electrode 181 and the first cap anode electrode by resistance
183 metal material is formed.In order to reduce the all-in resistance of first anode electrode 180, the thickness of the first top anode electrode 182 is excellent
Choosing is more than the first lower anode electrode 181 and the thickness of each of the first cap anode electrode 183.
First cap anode electrode 183 is arranged on the first top anode electrode 182.First cap anode electrode 183 covers
The upper surface and side surface of the first top of lid anode electrode 182 so that can prevent the first top anode electrode 182 upper surface and
Side surface is corroded.Thus, the oxidizability of the first cap anode electrode 183 can be less than the oxidation of the first top anode electrode 182
Degree.That is, the corrosion resistance in the material of the first cap anode electrode 183 can be better than the material of the first top anode electrode 182
Corrosion resistance in material.
First cap anode electrode 183 can cover the side surface of the first lower anode electrode 181.In this case,
The oxidizability of one cap anode electrode 183 can be less than the oxidizability of the first lower anode electrode 181.That is, the first cap sun
Corrosion resistance in the material of pole electrode 183 can be better than the corrosion resistance in the material of the first lower anode electrode 181.First lid
Portion's anode electrode 183 can be formed by transparent conductive material, such as tin indium oxide ITO, but be not limited to this material.
With with the identical mode of first anode electrode 180, the first auxiliary electrode 190 may include the first bottom auxiliary electrode
191st, the first top auxiliary electrode 192 and the first cap auxiliary electrode 193.
First bottom auxiliary electrode 191 is arranged between the top auxiliary electrode 192 of planarization layer 171 and first, wherein the
One bottom auxiliary electrode 191 improves the bonding strength between the top auxiliary electrode 192 of planarization layer 171 and first.In addition, first
Bottom auxiliary electrode 191 prevents the lower surface of the first top auxiliary electrode 192 to be corroded.Thus, the first bottom auxiliary electrode 191
Oxidizability can be less than the first top auxiliary electrode 192 oxidizability.That is, in the material of the first bottom auxiliary electrode 191
Corrosion resistance can better than the first top auxiliary electrode 192 material in corrosion resistance.First bottom auxiliary electrode 191 can be by
With the identical material of the first lower anode electrode 181, i.e. the alloy MoTi of molybdenum and titanium is formed, but is not limited to this material.
First top auxiliary electrode 192 be arranged on the first bottom auxiliary electrode 191 and the first cap auxiliary electrode 193 it
Between.First top auxiliary electrode 192 can by with the identical material of the first top anode electrode 182, i.e. copper Cu is formed, but is not limited
In this material.In order to reduce the all-in resistance of the first auxiliary electrode 190, the first top auxiliary electrode with relative low-resistance
192 thickness is preferably greater than with relatively high-resistance first bottom auxiliary electrode 191 and the first cap auxiliary electrode 193
The thickness of each.
First cap auxiliary electrode 193 is arranged on the first top auxiliary electrode 192.First cap auxiliary electrode 193 covers
The upper surface and side surface of the first top of lid auxiliary electrode 192 so that can prevent the first top auxiliary electrode 192 upper surface and
Side surface is corroded.Thus, the oxidizability of the first cap auxiliary electrode 193 can be less than the oxidation of the first top auxiliary electrode 192
Degree.That is, the corrosion resistance in the material of the first cap auxiliary electrode 193 can be better than the material of the first top auxiliary electrode 192
Corrosion resistance in material.
First cap auxiliary electrode 193 can cover the side surface of the first bottom auxiliary electrode 191.In this case,
The oxidizability of one cap auxiliary electrode 193 can be less than the oxidizability of the first bottom auxiliary electrode 191.That is, the first cap is auxiliary
Help the corrosion resistance in the material of electrode 193 can be better than the corrosion resistance in the material of the first bottom auxiliary electrode 191.First lid
Portion's auxiliary electrode 193 can be formed by transparent conductive material, such as tin indium oxide ITO, but be not limited to this material.
First cap auxiliary electrode 193 can be by forming with the identical material of the first cap anode electrode 183, and first covers
Portion's auxiliary electrode 193 can with the identical thickness of the first cap anode electrode 183 manufacture.First top auxiliary electrode 192 can
By being formed with the identical material of the first top anode electrode 182, and the first top auxiliary electrode 192 can with the first top
The identical thickness of anode electrode 182 is manufactured.First bottom auxiliary electrode 191 can by with the identical of the first lower anode electrode 181
Material is formed, and the first bottom auxiliary electrode 191 can with the identical thickness of the first lower anode electrode 181 manufacture.
In this situation, the first auxiliary electrode 190 and first anode electrode 180 can be manufactured simultaneously by same technique.
Second planarization layer 172 is arranged on the first auxiliary electrode 190 and first anode electrode 180.Second planarization layer
172 are provided for making the upper surface of substrate 100 to planarize together with foregoing first planarization layer 171.Second planarization layer 172
Can be by organic insulation, the shape such as acryl resin, epoxy resin, phenolic resin, polyamide, polyimide resin
Into, but it is not limited to these materials.
The 4th contact hole CH4 and the 5th contact hole CH5 is provided with the second planarization layer 172.Via the 4th contact hole
CH4 exposure first anode electrode 180, and expose the first auxiliary electrode 190 via the 5th contact hole CH5.
Second plate electrode 200 is arranged on the second planarization layer 172.Second plate electrode 200 is via the 4th contact hole
CH4 is connected with first anode electrode 180.Second plate electrode 200 reflexes to the light launched from organic luminous layer 240 upward
Direction, thus second plate electrode 200 is including having the material of excellent reflectivity.Second plate electrode 200 may include under second
Portion's anode electrode 201, the second middle part anode electrode 202 and the second top anode electrode 203.
Second lower anode electrode 201 is arranged between the middle part anode electrode 202 of first anode electrode 180 and second.The
Two lower anode electrodes 201 protect the lower surface of the second middle part anode electrode 202, thus prevent the second middle part anode electrode 202
Lower surface be corroded.Thus, the oxidizability of the second lower anode electrode 201 can be less than the oxygen of the second middle part anode electrode 202
Change degree.That is, the corrosion resistance in the material of the second lower anode electrode 201 can be better than the second middle part anode electrode 202
Corrosion resistance in material.Second lower anode electrode 201 can by such as tin indium oxide ITO etc transparent conductive material shape
Into, but it is not limited to this material.
Second middle part anode electrode 202 be arranged on the second lower anode electrode 201 and the second top anode electrode 203 it
Between.Second middle part anode electrode 202 compared with the second lower anode electrode 201 and the second top anode electrode 203 by having phase
To the material compared with low resistance and of a relatively high reflectivity, such as silver Ag is formed, but is not limited to this material.In order to reduce the second sun
The all-in resistance of pole electrode 200, the thickness of the second middle part anode electrode 202 with relative low-resistance preferably greater than has relatively
Second lower anode electrode 201 of high electrical resistance and the thickness of each of the second top anode electrode 203.
Second top anode electrode 203 is arranged on the upper surface of the second middle part anode electrode 202 so that can prevent second
The upper surface of middle part anode electrode 202 is corroded.Thus, the oxidizability of the second top anode electrode 203 can be less than the second middle part
The oxidizability of anode electrode 202.That is, the corrosion resistance in the material of the second top anode electrode 203 can be better than in second
Corrosion resistance in the material of portion's anode electrode 202.Second top anode electrode 203 can be by such as tin indium oxide ITO's etc
Transparent conductive material is formed, but is not limited to this material.
With with the foregoing identical mode of second plate electrode 200, the second auxiliary electrode 210 is arranged on the second planarization layer
On 172.Second auxiliary electrode 210 is connected via the 5th contact hole CH5 with the first auxiliary electrode 190.Second auxiliary electrode 210 with
First auxiliary electrode 190 reduces the resistance of cathode electrode 250 together.In addition, the second auxiliary electrode 210 the first dyke 221 with
Clearance space is prepared between second dyke 222.
Second auxiliary electrode 210 may include the second bottom auxiliary electrode 211, on the second middle part auxiliary electrode 212 and second
Portion's auxiliary electrode 213.
Second bottom auxiliary electrode 211 is arranged between the first auxiliary electrode 190 and the second middle part auxiliary electrode 212.The
Two bottom auxiliary electrodes 211 protect the lower surface of the second middle part auxiliary electrode 212, thus prevent the second middle part auxiliary electrode 212
Lower surface be corroded.Thus, the oxidizability of the second bottom auxiliary electrode 211 can be less than the oxygen of the second middle part auxiliary electrode 212
Change degree.That is, the corrosion resistance in the material of the second bottom auxiliary electrode 211 can be better than the second middle part auxiliary electrode 212
Corrosion resistance in material.Second bottom auxiliary electrode 211 can be formed by transparent conductive material, such as tin indium oxide ITO, but simultaneously
Not limited to this material.
The width of second bottom auxiliary electrode 211 is more than the width and the second top auxiliary of the second middle part auxiliary electrode 212
Each of the width of electrode 213, is thus conducive to the electrical connection between the auxiliary electrode 210 of cathode electrode 250 and second.
Second middle part auxiliary electrode 212 be arranged on the second bottom auxiliary electrode 211 and the second top auxiliary electrode 213 it
Between.Second middle part auxiliary electrode 212 compared with the second bottom auxiliary electrode 211 and the second top auxiliary electrode 213 by having phase
To the material compared with low resistance and of a relatively high reflectivity, such as silver Ag is formed, but is not limited to this material.It is auxiliary in order to reduce second
The all-in resistance of electrode 210 is helped, the thickness of the second middle part auxiliary electrode 212 with relative low-resistance preferably greater than has relatively
Second bottom auxiliary electrode 211 of high electrical resistance and the thickness of each of the second top auxiliary electrode 213.
The width of second middle part auxiliary electrode 212 is less than the width of the second bottom auxiliary electrode 211.In addition, the second middle part
The width of auxiliary electrode 212 is less than the width of the second top auxiliary electrode 213.The second middle part with relatively small width is aided in
Electrode 212 can increase the clearance space between the first dyke 221 and the second dyke 222, and thus cathode electrode 250 is easy to sink
In clearance space of the product between the first dyke 221 and the second dyke 222.
Second top auxiliary electrode 213 is arranged on the upper surface of the second middle part auxiliary electrode 212 so that can prevent second
The upper surface of middle part auxiliary electrode 212 is corroded.Thus, the oxidizability of the second top auxiliary electrode 213 can be less than the second middle part
The oxidizability of auxiliary electrode 212.That is, the corrosion resistance in the material of the second top auxiliary electrode 213 can be better than in second
Corrosion resistance in the material of portion's auxiliary electrode 212.Second top auxiliary electrode 213 can be by such as tin indium oxide ITO's etc
Transparent conductive material is formed, but is not limited to this material.
Lower surface of the two ends of second top auxiliary electrode 213 along the first dyke 221 is upwardly extended.Pass through subsequent system
Make technique and will readily appreciate that the structure relevant with the two ends of the second top auxiliary electrode 213.
Second top auxiliary electrode 213 can be by forming, and on second with the identical material of the second top anode electrode 203
Portion's auxiliary electrode 213 can with the identical thickness of the second top anode electrode 203 manufacture.Second middle part auxiliary electrode 212 can
By being formed with the identical material of the second middle part anode electrode 202, and the second middle part auxiliary electrode 212 can with second middle part
The identical thickness of anode electrode 202 is manufactured.Second bottom auxiliary electrode 211 can by with the identical of the second lower anode electrode 201
Material is formed, and the second bottom auxiliary electrode 211 can with the identical thickness of the second lower anode electrode 201 manufacture.
According to an embodiment of the invention, exist for reducing be connected to each other the two of the resistance of cathode electrode 250
Individual auxiliary electrode：First auxiliary electrode 190 and the second auxiliary electrode 210 so that be easily controlled the resistance characteristic of auxiliary electrode.
In more detail, the second auxiliary electrode 210 is formed within the same layer with second plate electrode 200.Thus, if the
The increase of the width of two auxiliary electrode 210, then the width of second plate electrode 200 must reduce, and thus reduce the pixel of display device
Region.Due to this reason, there is limitation in the width increase of the second auxiliary electrode 210.According to an embodiment of the invention,
The lower section of second auxiliary electrode 210 is additional to set the first auxiliary electrode 190 being connected with the second auxiliary electrode 210 so that can reduce
The resistance of cathode electrode 250 is without reducing pixel region.
First auxiliary electrode 190 is formed within the same layer with first anode electrode 180, and wherein first anode electrode 180 will
Source electrode 150 and second plate electrode 200 are connected to each other.Thus, the width of first anode electrode 180 can be reduced, thus may be used
Increase the width of the first auxiliary electrode 190.That is, the width of the first auxiliary electrode 190 can be more than first anode electrode 180
Width.In addition, as the width of the first auxiliary electrode 190 can increase, the first auxiliary electrode 190 can be with second plate electrode 200
It is overlapping, thus reduce the resistance of cathode electrode 250.
Dyke 221 and 222 is arranged on the auxiliary electrode 210 of second plate electrode 200 and second.Dyke 221 and 222 can be wrapped
Include the first dyke 221 and the second dyke 222.First dyke 221 and the second dyke 222 are formed by same material.First dyke 221
It is arranged on the upper surface of the second top auxiliary electrode 213 of the second auxiliary electrode 210.Second dyke 222 is arranged on the second sun
On the upper surface of second bottom auxiliary electrode 211 of the upper surface of pole electrode 200 and the second auxiliary electrode 210.First dyke
221 and second dyke 222 it is separated from one another, and the second auxiliary electrode 210 and cathode electrode 250 are in the first dyke 221 and
It is electrically connected to each other in clearance space between two dykes.Second dyke 222 may include on both sides positioned at the first dyke 221 and
Part I and Part II on the two ends of second auxiliary electrode 210.
The thickness T2 of second dyke 222 is less than the thickness T1 of the first dyke 221.Because the thickness T2 of the second dyke 222 is small
In the thickness T1 of the first dyke 221, be conducive to realizing the moon in the clearance space between the first dyke 221 and the second dyke 222
Electrical connection between the auxiliary electrode 210 of pole electrode 250 and second.That is, if the thickness T2 of the second dyke 222 is larger,
Interval between first dyke 221 and the second dyke 222 reduces, and thus cathode electrode 250 may not be deposited on the first dyke
221 and the second clearance space between dyke 222 in.For anti-problem here, the thickness T2 of the second dyke 222 is less than the first dike
The thickness T1 in portion 221.
The width of the upper surface of first dyke 221 is more than the width of the lower surface of the first dyke 221.Thus, the first dyke
221 are formed as eaves structure.From the point of view of top view, the clearance space between the first dyke 221 and the second dyke 222 is by with room
The upper surface covering of first dyke 221 of eaves structure so that for the depositing operation of organic luminous layer 240, organic hair can be prevented
Photosphere 240 is deposited in the clearance space between the first dyke 221 and the second dyke 222.That is, if function as the of eaves
The upper surface of one dyke 221 is configured to cover the clearance space between the first dyke 221 and the second dyke 222, then can prevent
Machine luminescent layer 240 is penetrated into the clearance space between the first dyke 221 and the second dyke 222.Therefore, can be via the first dyke
221 and the second clearance space between dyke 222 expose the second auxiliary electrode 210.Especially, can be by using with going out coloured pencil
The deposition materials directly spent perform method of evaporating to manufacture organic luminous layer 240.Thus, for the deposition work of organic luminous layer 240
Skill, organic luminous layer 240 is not deposited in the clearance space between the first dyke 221 and the second dyke 222.
Second dyke 222 of the upper surface of exposure second plate electrode 200 be arranged on second plate electrode 200 side and
On opposite side.As the second dyke 222 is arranged to expose the upper surface of second plate electrode 200, it can be ensured that image display area.
In addition, the second dyke 222 is arranged on the side and opposite side of second plate electrode 200 so that the second middle part anode can be prevented
The side surface of electrode 202 is exposed to outside (side surface of wherein the second middle part anode electrode 202 is relative to be vulnerable to corrosion), thus
The side surface of the second middle part anode electrode 202 is prevented to be corroded.
In addition, the second dyke 222 is arranged between the auxiliary electrode 210 of second plate electrode 200 and second, wherein the second dike
The auxiliary electrode 210 of second plate electrode 200 and second is electrically insulated from each other by portion 222.First dyke 221 and the second dyke 222 can
By organic insulation, formed such as polyimide resin, acryl resin, benzocyclobutene BCB, but be not limited to these
Material.
Organic luminous layer 240 is arranged on second plate electrode 200.Organic luminous layer 240 may include hole injection layer, sky
Cave transport layer, luminescent layer, electron transfer layer and electron injecting layer.The structurally variable of organic luminous layer 240 is for art
It is commonly known variously-shaped for technical staff.
Organic luminous layer 240 may extend to the upper surface of dyke 221 and 222.In addition, organic luminous layer 240 may extend to
The upper surface of second bottom auxiliary electrode 211 of the second auxiliary electrode 210.In this case, organic luminous layer 240 is not covered
The whole upper surface of second bottom auxiliary electrode 211.If the whole upper surface of the second bottom auxiliary electrode 211 is by organic light emission
Layer 240 is covered, then is difficult that the second auxiliary electrode 210 and cathode electrode 250 are electrically connected to each other.
Cathode electrode 250 is arranged on organic luminous layer 240.On the surface that transmitting light is arranged on due to cathode electrode 250,
So cathode electrode 250 is formed by transparent conductive material.Thus, because cathode electrode 250 is formed by transparent conductive material, so
The resistance increase of cathode electrode 250.In order to reduce the resistance of cathode electrode 250, the auxiliary electrode 210 of cathode electrode 250 and second
Connection.That is, clearance space and second auxiliary electricity of the cathode electrode 250 between the first dyke 221 and the second dyke 221
Pole 210 is connected.Sputtering can be passed through, i.e. perform depositing operation using the deposition materials with poor straightness to manufacture negative electrode electricity
Pole 250.Therefore, for the depositing operation of cathode electrode 250, cathode electrode 250 can be deposited on the first dyke 221 and the second dyke
In clearance space between 221.
Although not shown, the encapsulated layer for being provided for preventing moisture infiltration can be added on cathode electrode 250.Encapsulated layer
It can be formed by various materials commonly known to a person skilled in the art., can be in cathode electrode although not shown
The colour filter for being provided for each pixel is added on 250.In this case, white light can be launched from organic luminous layer 240.
According to an embodiment of the invention, instead of providing the additional lattice (see Fig. 1 " 70 ") of eaves structure, if
Put the upper surface of the first dyke 221 on the second auxiliary electrode 210 width be more than the first dyke 221 lower surface width
Degree so that the first dyke 221 serves as eaves.Thus, it can omit according to correlation technique for forming lattice (see Fig. 1's
" 70 ") additional masks technique.
Fig. 3 A to 3K are diagram cuing open according to the manufacture method of the organic light-emitting display device of one embodiment of the present invention
Face figure, it is related to the organic light-emitting display device shown in Fig. 2.Thus, identical reference numeral will be used in whole accompanying drawing
Represent same or analogous part, and detailed description to same section will be omitted.
First, as shown in fig. 3, active layer 110, gate insulating film 120, grid electricity are sequentially arranged on the substrate 100
Pole 130, interlayer insulating film 140, source electrode 150 and drain electrode 160.
In more detail, active layer 110 is set on the substrate 100, gate insulating film 120 is set on active layer 110,
Gate electrode 130 is set on gate insulating film 120, interlayer insulating film 140 is set on gate electrode 130, in gate insulating film
120 and interlayer insulating film 140 in the first contact hole CH1 and the second contact hole CH2 be set, and set via the first contact hole
The drain electrode 160 that CH1 is connected with one end of active layer 110, and set via the second contact hole CH2 and active layer 110
The source electrode 150 of other end connection.
Source electrode 150 may include bottom source electrode 151 and top source electrode 152.Under drain electrode 160 may include
Portion's drain electrode 161 and top drain electrode 162.
Then, as shown in Figure 3 B, passivation layer 165 is set on source electrode 150 and drain electrode 160.In passivation layer
First planarization layer 171 is set on 165.
3rd contact hole CH3 is set in the planarization layer 171 of passivation layer 165 and first, and thus source electrode 150 is via the
Three contact hole CH3 are exposed to outside.If desired, drain electrode 160 can be exposed to outside via the 3rd contact hole CH3.
Then, as shown in FIG. 3 C, the auxiliary electricity of first anode electrode 180 and first is set on the first planarization layer 171
Pole 190, the wherein auxiliary electrode 190 of first anode electrode 180 and first is separated from one another.
First anode electrode 180 is connected via the 3rd contact hole CH3 with source electrode 150.If drain electrode 160 via
3rd contact hole CH3 is exposed to outside, then first anode electrode 180 is connected via the 3rd contact hole CH3 with drain electrode 160.
First anode electrode 180 may include the first lower anode electrode 181, the first top anode electrode 182 and the first lid
Portion's anode electrode 183.First auxiliary electrode 190 may include the first bottom auxiliary electrode 191, the and of the first top auxiliary electrode 192
First cap auxiliary electrode 193.
The auxiliary electrode 190 of first anode electrode 180 and first can be formed by same material and can be by same patterning
Technique is manufactured simultaneously.
Then, as shown in fig.3d, second is set to planarize on the auxiliary electrode 190 of first anode electrode 180 and first
Layer 172.
4th contact hole CH4 and the 5th contact hole CH5 is set in the second planarization layer 172.First anode electrode 180 is passed through
Outside is exposed to by the 4th contact hole CH4, and the first auxiliary electrode 190 is exposed to outside via the 5th contact hole CH5.
Then, as indicated in figure 3e, the auxiliary electricity of second plate electrode 200 and second is set on the second planarization layer 172
Pole 210.
The auxiliary electrode 210 of second plate electrode 200 and second can be formed by same material and can be by same patterning
Technique is manufactured simultaneously.
Second plate electrode 200 may include the second lower anode electrode 201, on the second middle part anode electrode 202 and second
Portion's anode electrode 203.Second auxiliary electrode 210 may include the second bottom auxiliary electrode 211, the and of the second middle part auxiliary electrode 212
Second top auxiliary electrode 213.
Then, as shown in fig.3f, photoetching agent pattern is set on the auxiliary electrode 210 of second plate electrode 200 and second
410 and 420.
Photoetching agent pattern 410 and 420 may include the He of the first photoetching agent pattern 410 being arranged on the second auxiliary electrode 210
It is arranged on the second photoetching agent pattern 420 on second plate electrode 200.
First photoetching agent pattern 410 is arranged on the predetermined portions of the upper surface of the second auxiliary electrode 210, and thus second is auxiliary
The side and opposite side for helping electrode 210 are not covered by the first photoetching agent pattern 410.
Second photoetching agent pattern 420 is arranged on the whole upper surface of second plate electrode 200, thus second plate electrode
200 whole upper surface is covered by the second photoetching agent pattern 420.
As shown in figure 3g, the pre- of the second auxiliary electrode of mask etching 210 is used as by using the first photoetching agent pattern 410
Determine part.
In detail, etching is not covered by the first photoetching agent pattern 410 the side of the second auxiliary electrode 210 and another
Side.In this case, the second bottom auxiliary electrode 211 is not etched, but the second middle part auxiliary electrode 212 and the second top are auxiliary
Electrode 213 is helped to be etched.That is, in the case where using the first photoetching agent pattern 410 as mask, the second top auxiliary electricity
Pole 213 is etched first, and then the second middle part auxiliary electrode 212 is etched.Thus, the second bottom auxiliary electrode 211 is not eclipsed
Carve.However, if it is desired to if, the second bottom auxiliary electrode 211 can be partially etched.
After the etch process, the width phase that the width of the second top auxiliary electrode 213 can be with the first photoetching agent pattern 410
Together, however the width that is arranged on the second middle part auxiliary electrode 212 of the lower section of the second top auxiliary electrode 213 is smaller than the first photoetching
The width of glue pattern 410.Therefore, the width of the second top auxiliary electrode 213 obtained after the etch process can be more than in erosion
The width of the second middle part auxiliary electrode 212 obtained after carving technology.
Second plate electrode 200 is covered by the second photoetching agent pattern 420, and thus second plate electrode 200 is not auxiliary by second
The etch process of electrode 210 is helped to etch.
Then, as shown in figure 3h, the first photoetching agent pattern 410 and the second photoetching agent pattern 420 are removed, then second
Dyke 221 and 222 is set on auxiliary electrode 210 and second plate electrode 200.
Dyke 221 and 222 may include the upper surface for the second top auxiliary electrode 213 for being arranged on the second auxiliary electrode 210
On the first dyke 221 and the second dyke 222 being arranged on remaining region.Second dyke 222 is arranged on second plate electrode
On 200 upper surface and it is arranged on the upper surface of the second bottom auxiliary electrode 211 of the second auxiliary electrode 210.
The thickness T2 of second dyke 222 is less than the thickness T1 of the first dyke 221.Because the thickness T2 of the second dyke 222 is small
In the thickness T1 of the first dyke 221, be conducive to realizing in the clearance space between the first dyke 221 and the second dyke 222
Electrical connection between two auxiliary electrodes 210 and cathode electrode (see Fig. 3 K " 250 ").
That is, if the thickness T2 of the second dyke 222 is larger, between the first dyke 221 and the second dyke 222 between
Every reduction, thus in Fig. 3 K subsequent technique, cathode electrode (see " 250 " in Fig. 3 K) may not be deposited on the first dyke
221 and the second clearance space between dyke 222 in.Thus, for anti-problem here, the thickness T2 of the second dyke 222 is less than
The thickness T1 of first dyke 221.Single exposure manufacture, which can be performed, by using half-tone mask or diffracting mask has different thickness
The first dyke 221 and the second dyke 222 of degree.
Then, as shown in Fig. 3 I, heat treatment is performed, so that in the first dyke 221 with being arranged on below the first dyke 221
The second top auxiliary electrode 213 between cause thermal stress.That is, the first dyke 221 is shunk so that the first dyke 221
The width at the two ends of lower surface reduces.Therefore, lower surface of the two ends of the second top auxiliary electrode 213 along the first dyke 221
Upwardly extend.That is, perform heat treatment to the first dyke 221, and bend the second top auxiliary electrode 213 two ends or
Some is upwardly extended with the both sides along the first dyke 221.
By previous process, the width of the upper surface of the first dyke 221 is more than the width of the lower surface of the first dyke 221,
Thus eaves structure can be obtained in the first dyke 221.Due to eaves structure, between the first dyke 221 and the second dyke 222
Clearance space is covered by the upper surface of the first dyke 221.Thus, it can prevent in the depositing operation of subsequent organic luminous layer 240
Only organic luminous layer 240 is deposited in the clearance space between the first dyke 221 and the second dyke 222.
Then, as shown in Fig. 3 J, organic luminous layer 240 is set on second plate electrode 200.
Method of evaporating manufacture organic luminous layer 240 can be performed by using the deposition materials with outstanding straightness.Thus,
Organic luminous layer 240 can be deposited on the upper surface of dyke 221 and 222.However, organic luminous layer 240 can be prevented to be deposited on
In clearance space between one dyke 221 and the second dyke 222.That is, for the depositing operation of organic luminous layer 240,
Eaves are served as in the upper surface of one dyke 221, and organic luminous layer 240 thus can be prevented in the depositing operation of organic luminous layer 240
It is deposited in the clearance space between the first dyke 221 and the second dyke 222, without using the second bottom auxiliary electrode of covering
The mask pattern of 211 upper surface.
However, some organic luminous layers 240 can be deposited on the clearance space between the first dyke 221 and the second dyke 222
In.Even if in this case, being not all of the second bottom auxiliary electrode 211 to be covered by organic luminous layer 240.
As shown in Fig. 3 K, cathode electrode 250 is set on organic luminous layer 240.
Clearance space and second auxiliary electrode of the cathode electrode 250 between the first dyke 221 and the second dyke 222
210 connections.Sputtering can be passed through, i.e. perform depositing operation to manufacture cathode electrode using the deposition materials with poor straightness
250.Therefore, cathode electrode 250 can be deposited on the first dyke 221 and the second dyke 221 in the depositing operation of cathode electrode 250
Between clearance space in.Especially, cathode electrode 250 can be aided in constituting the second bottom of the second auxiliary electrode 210 respectively
Electrode 211, the second middle part auxiliary electrode 212 and the second top auxiliary electrode 213 are connected.
According to an embodiment of the invention, the first dyke 221 being arranged on the second auxiliary electrode 210 is configured to tool
There is eaves structure so that the additional masks technique for being used to form lattice according to correlation technique can be omitted.Sun in the present invention
Pole electrode can be used as the first pixel electrode, and cathode electrode can be used as the second pixel electrode.
According to an embodiment of the invention, there is the first auxiliary electrode for reducing the resistance of cathode electrode 250
190 and second auxiliary electrode 210 the two auxiliary electrode so that the resistance characteristic of auxiliary electrode can be easily controlled.Especially,
It is additional below the second auxiliary electrode 210 that the first auxiliary electrode being connected via contact hole with the second auxiliary electrode 210 is set
190 so that the resistance of cathode electrode 250 can be reduced without reducing pixel region.
For it will be apparent to those skilled in the art that, in the situation without departing substantially from the spirit or scope of the present invention
Under, can modifications and variations of the present invention be possible.Therefore, it is contemplated that cover fall into scope and
Modifications of the present invention and change in its equivalency range.
Claims (20)
1. a kind of organic light emitting display (OLED) device, including：
Substrate；
Anode electrode on the substrate；
Organic luminous layer on the anode electrode；
Cathode electrode on the organic luminous layer；
The auxiliary electrode being connected with the cathode electrode；
The first dyke on the upper surface of the auxiliary electrode；With
The second dyke between the auxiliary electrode and the anode electrode, wherein second dyke is by with described first
Dyke identical material is formed, and first dyke and second dyke are separated from one another,
The width of the upper surface of wherein described first dyke is more than the width of the lower surface of first dyke, and the negative electrode
Clearance space of the electrode between first dyke and second dyke is connected with the auxiliary electrode.
2. organic light-emitting display device according to claim 1, wherein first dyke and a part of auxiliary electricity
Pole forms lattice, and the lattice has the back taper that the basal surface towards the lattice narrows, and
Wherein described lattice has eaves portion, and the cathode electrode is connected in the region below the eaves portion of the lattice
To the auxiliary electrode.
3. organic light-emitting display device according to claim 1, wherein a part of auxiliary electrode forms described
The base portion of lattice, and first dyke forms the top of the lattice.
4. organic light-emitting display device according to claim 1, wherein the auxiliary electrode include bottom auxiliary electrode, in
Portion's auxiliary electrode and top auxiliary electrode.
5. organic light-emitting display device according to claim 4, wherein the width of the bottom auxiliary electrode is more than described
The width of each of middle part auxiliary electrode and the top auxiliary electrode, and the width of the middle part auxiliary electrode is less than institute
State the width of top auxiliary electrode.
6. organic light-emitting display device according to claim 4, wherein the two ends of the top auxiliary electrode are along described
The lower surface of first dyke is upwardly extended.
7. organic light-emitting display device according to claim 4, wherein first dyke is arranged on the top auxiliary
On the upper surface of electrode, and second dyke is arranged on the upper surface of the bottom auxiliary electrode.
8. organic light-emitting display device according to claim 1, wherein the thickness of first dyke is more than described second
The thickness of dyke.
9. organic light-emitting display device according to claim 1, wherein the anode electrode include first anode electrode, with
And the second plate electrode being connected via contact hole with the first anode electrode,
The auxiliary electrode include the first auxiliary electrode and via contact hole be connected with first auxiliary electrode it is second auxiliary
Electrode is helped, and
First dyke is arranged on second auxiliary electrode, and second dyke is arranged on the second auxiliary electricity
Between pole and the second plate electrode.
10. organic light-emitting display device according to claim 9, wherein the width of first auxiliary electrode is more than described
The width of first anode electrode, and first auxiliary electrode and the second plate electrode crossover.
11. organic light-emitting display device according to claim 9, wherein the width for stating second plate electrode is more than described the
The width of one anode electrode, and the second plate electrode and first auxiliary electrode are overlapping.
12. organic light-emitting display device according to claim 9, wherein first auxiliary electrode or second auxiliary
Electrode includes sandwich construction, and the sandwich construction has the middle part auxiliary being located between top auxiliary electrode and bottom auxiliary electrode
Electrode, and
Each of the top auxiliary electrode and the bottom auxiliary electrode are included than the middle part auxiliary electrode with higher
The material of corrosion resistance, the middle part auxiliary electrode includes more each than the top auxiliary electrode and the bottom auxiliary electrode
It is individual that there is more low-resistance material.
13. organic light-emitting display device according to claim 12, wherein first auxiliary electrode includes the multilayer
Structure, and the top auxiliary electrode of first auxiliary electrode covers the middle part auxiliary electrode of first auxiliary electrode with
The side surface of portion's auxiliary electrode.
14. organic light-emitting display device according to claim 1, wherein the auxiliary electrode include the first auxiliary electrode and
Second auxiliary electrode, second auxiliary electrode is overlapped and is connected with first auxiliary electrode,
Wherein described anode electrode includes first anode electrode and second plate electrode, the second plate electrode and described first
Anode electrode is overlapped and connected, and
Wherein described first anode electrode or second plate electrode exist with first auxiliary electrode or the formation of the second auxiliary electrode
On same layer.
15. a kind of organic light-emitting display device, including：
It is arranged on the organic luminous layer on the first pixel electrode；
It is arranged on the second pixel electrode on the organic luminous layer；
The auxiliary electrode being connected with second pixel electrode；
It is arranged on the first dyke on the auxiliary electrode；
The second dyke including Part I and Part II, wherein the Part I and Part II of second dyke are set
On the both sides of first dyke and on the two ends of the auxiliary electrode；And
Clearance space between first dyke and the Part I or Part II of second dyke,
Wherein described auxiliary electrode is between first dyke and the Part I or Part II of second dyke
Clearance space in be connected to second pixel electrode.
16. organic light-emitting display device according to claim 15, wherein first dyke and a part of auxiliary
Electrode formation lattice, the lattice has the back taper that the basal surface towards the lattice narrows, and
Wherein described lattice has eaves portion, and second pixel electrode is in the region below the eaves portion of the lattice
It is connected to the auxiliary electrode.
17. organic light-emitting display device according to claim 15, wherein first dyke and second dyke by
Identical material is formed.
18. a kind of method for manufacturing organic light-emitting display device, including：
Anode electrode and auxiliary electrode are set on substrate；
First dyke is set on the auxiliary electrode；
Second dyke is set between the auxiliary electrode and the anode electrode, wherein second dyke and first dike
Spaced-apart；
Organic luminous layer is set on the anode electrode；With
Cathode electrode is set on the organic luminous layer,
The width of the upper surface of wherein described first dyke is more than the width of the lower surface of first dyke, and the negative electrode
Clearance space of the electrode between first dyke and second dyke is connected with the auxiliary electrode.
19. method according to claim 18, being provided with the auxiliary electrode includes：
Bottom auxiliary electrode, middle part auxiliary electrode and top auxiliary electrode are set on the substrate；
By using photoetching agent pattern as top auxiliary electrode described in mask etching and the middle part auxiliary electrode each
Side and opposite side；
First dyke is set on the top auxiliary electrode after the photoetching agent pattern is removed；With
Perform heat treatment to first dyke, and bend the two ends of the top auxiliary electrode with along first dyke
Both sides upwardly extend.
20. method according to claim 18, in addition to：
Perform heat treatment to first dyke, and bend some of the auxiliary electrode with along first dyke
Both sides upwardly extend.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150181241A KR102506532B1 (en) | 2015-12-17 | 2015-12-17 | Organic light emitting display device and method of manufacturing the same |
| KR10-2015-0181241 | 2015-12-17 |
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| CN107039494A true CN107039494A (en) | 2017-08-11 |
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| Country | Link |
|---|---|
| US (2) | US9947733B2 (en) |
| EP (1) | EP3182477B1 (en) |
| KR (1) | KR102506532B1 (en) |
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| Publication number | Publication date |
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| KR102506532B1 (en) | 2023-03-03 |
| US9947733B2 (en) | 2018-04-17 |
| EP3182477A1 (en) | 2017-06-21 |
| US20180204894A1 (en) | 2018-07-19 |
| CN107039494B (en) | 2020-10-23 |
| EP3182477B1 (en) | 2020-08-12 |
| KR20170072726A (en) | 2017-06-27 |
| US20170179208A1 (en) | 2017-06-22 |
| US10056441B2 (en) | 2018-08-21 |
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