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CN107026239B - Organic electroluminescence device and its preparation method and application - Google Patents

Organic electroluminescence device and its preparation method and application Download PDF

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Publication number
CN107026239B
CN107026239B CN201610846822.0A CN201610846822A CN107026239B CN 107026239 B CN107026239 B CN 107026239B CN 201610846822 A CN201610846822 A CN 201610846822A CN 107026239 B CN107026239 B CN 107026239B
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layer
film layer
pixel
organic electroluminescence
film
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CN107026239A (en
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李哲
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Guangdong Juhua Printing Display Technology Co Ltd
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Guangdong Juhua Printing Display Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention relates to a kind of organic electroluminescence device and its preparation method and application, structure includes: substrate, anode array layer, pixel defining layer, light emitting functional layer, cathode layer and film layer.The film layer covers the cathode layer, the base portion of the film layer is filled in the pixel hole, the top of the film layer is equipped with multiple protrusions, the distance between pixel hole of the distance between adjacent described protrusion≤adjacent, and the film layer is made of clear material, the refractive index of the film layer is greater than air refraction and is less than the refractive index of the cathode layer.Above-mentioned organic electroluminescence device can improve the service life of organic electroluminescence device by the way that film layer (by printing and imprinting preparation) is arranged with exclusion of water and oxygen, while improve the light extraction efficiency and external quantum efficiency of device.

Description

Organic electroluminescence device and its preparation method and application
Technical field
The present invention relates to organic electroluminescence device technical field, more particularly to a kind of organic electroluminescence device and its Preparation method and application.
Background technique
Printed form electroluminescent device during the preparation process, must use one layer of material for being used to define pixel, the layer material Commonly known as bank.Have on Bank layer " container " of numerous sunk areas as ink, each sunk area corresponds to one A pixel.The process flow being widely used at present is that ink is inserted each pixel region using InkJet printing processes, and ink exists It is sprawled in the region that bank is surrounded;Then, it is dried in vacuo under certain temperature (such as low temperature), it is molten by strict control The parameters such as rate of volatilization, the vapor pressure solvent of agent are uniform to guarantee to obtain between different zones, different pixels in pixel as far as possible It is dry;Finally, drying film thoroughly by baking.After organic layer, cathode preparation are completed, finally to electroluminescent cell Part/panel is packaged.
Sometimes, in order to improve the light extraction efficiency of electroluminescent device, it is also necessary to increase necessary optical thin film, to help electricity The luminous energy that electroluminescence device issues preferably is extracted from device.Typically, encapsulating structure and light extraction film are two Independent part prepares respectively in the preparation process of display device, and the two has respective thickness, is also unfavorable for mentioning for light It takes.
Summary of the invention
Based on this, the object of the present invention is to provide a kind of organic electroluminescence devices of high light extraction efficiency.
Specific technical solution is as follows:
A kind of organic electroluminescence device, comprising: substrate, anode array layer, pixel defining layer, light emitting functional layer, cathode Layer and film layer;
The anode array layer is located on the substrate;
The pixel defining layer is formed on the anode array layer, and opposite in each anode on the anode array layer It is cheated equipped with pixel the position answered;
The light emitting functional layer is stacked in the pixel is cheated, and covers the anode;
The cathode layer covers the light emitting functional layer and the pixel defining layer;
The film layer covers the cathode layer, and the base portion of the film layer is filled in the pixel hole, the film layer Top be equipped with the distance between multiple protrusions, the pixel hole of the distance between adjacent described protrusion≤adjacent, and institute Film layer is stated to be made of clear material, the refractive index of the film layer between the refractive index of air refraction and the cathode layer it Between.
In wherein some embodiments, the protrusion is cheated corresponding to the pixel.
In wherein some embodiments, the shape of the protrusion is convex lens shape, and cylindrical, cone, polygonal pyramid type is cut Cone, truncated pyramid or arc-shaped.
In wherein some embodiments, the distance between upper surface of the base portion of the film layer and the protrusion >=0.5 μ m。
In wherein some embodiments, the film layer is made of at least one of following material: molecular weight is less than etc. In 2000 organic polymer resin of small organic molecule, molecular weight greater than 2000, organosilicon, metal oxide, metal vulcanization Object, metal selenide, metal telluride, metal chloride, metal bromide, metal iodide, metal hydroxides, silicon oxidation Object, silicon oxynitride, silicon nitride, graphene, thin layer graphite, mica group compound, hydrotalcite-based compound and montmorillonite class chemical combination Object.
In wherein some embodiments, the film layer is by least one basis material and at least one stratified material system At;Described matrix material is selected from: polyamide, polypropylene cyanogen, polybutylene terephthalate (PBT), polycarbonate, polymethyl Sour methyl esters, polyethylene, it is poly- to benzene diethyl sulfone, polyethylene terephthalate, polyethylene naphthalate, polyimides, Polypropylene, polystyrene, polysulfones, polyvinyl chloride, polysiloxanes, polyvinylidene fluoride, polyvinyl acetate, polyureas, polytetrafluoro Ethylene or epoxy resin;Layered material is selected from: metal sulfide, metal selenide, metal telluride, metal chloride, Metal bromide, metal iodide, metal hydroxides, graphene, thin layer graphite, mica group compound, hydrotalcite chemical combination Object and montmorillonite class compound.
It is a further object of the present invention to provide the preparation methods of above-mentioned organic electroluminescence device.
Specific technical solution is as follows:
The preparation method of above-mentioned organic electroluminescence device, includes the following steps:
Obtain the underlay substrate comprising tft array and anode array layer;
Preparation pixel defining layer: pixel defining layer is prepared on Yu Suoshu anode array layer, and is made in the pixel defining layer It is standby to obtain corresponding pixel hole;
Preparation light emitting functional layer: the light emitting functional layer is prepared in above-mentioned pixel hole, the light emitting functional layer is at least wrapped Include one layer of luminescent layer;
It prepares cathode layer: preparing cathode layer in the light emitting functional layer and the pixel defining layer, the cathode layer covers Cover the light emitting functional layer and the pixel defining layer;
Preparation film layer: the film layer is prepared on the cathode layer, the base portion of the film layer is filled in the picture Element hole, the top of the film layer are equipped with multiple protrusions, and the distance between adjacent described protrusion is less than or equal to adjacent described The distance between pixel hole.
In wherein some embodiments, the film layer the preparation method comprises the following steps:
Film layer material is dissolved in solvent, is then coated on the cathode layer, is dried under vacuum to 95-99.9%'s Solvent volatilization;
Impression block is obtained, the impression block is equipped with multiple protrusions, carries out using impression block to the film layer Coining manipulation forms the protrusion;
Vacuum drying removes residual solvent to get the film layer.
It is a further object of the present invention to provide the display panels comprising above-mentioned organic electroluminescence device.
Specific technical solution is as follows:
A kind of display panel includes above-mentioned organic electroluminescence device.
It is a further object of the present invention to provide the display devices comprising display panel.
It the principle of the present invention and has the beneficial effect that:
In general, the bank (pixel defining layer) of pixel delimited area with a thickness of 1-1.5 μm, the pixel defining layer is each The corresponding position of pixel is cheated equipped with pixel, which cheats the ink (film material with function) that can accommodate 50-200pL, ink dries Form film after dry, the thickness of every layer of organic layer film is generally between 10-150nm, each layer of entire electroluminescent device Organic layer, cathode thin film overall thickness are generally between 200nm-500nm.Therefore, after electroluminescent device completes preparation, pixel Dented space in delimited area there are also 0.5-1.3 μm of depth is not used by.
The method that the present invention passes through " printing+coining " is formed a kind of (convex containing bulge-structure on entire luminescent panel Portion) array transparent thin film layer, which is characterized in that: on the surface of the film layer, in imprint mode in coating Surface forms multiple protrusions, and the distance between convex shape on transparent configuration is equal to or less than the distance between pixel hole; Its range being distributed is filled with the dented space in each pixel hole, which at least has 0.5 μm or more of thickness;Transparent configuration Composition material refractive index between electrode material and air.The advantage of the transparent configuration is, forms the protrusion of array Structure can reduce full transmitting of the light on the top electrode at surface interface, while film layer forms exclusion of water to electroluminescent device With the protection of oxygen.
Above-mentioned organic electroluminescence device can be with exclusion of water and oxygen by setting film layer (by printing and imprinting preparation) Gas, improves the service life of organic electroluminescence device, while improving the light extraction efficiency and external quantum efficiency of device.And it is above-mentioned Organic electroluminescence device will encapsulate and the two functions of light extraction are integrated in a structure, potential to further decrease entirely The thickness of display device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one embodiment of the invention organic electroluminescence device;
Fig. 2 is the structural schematic diagram of another embodiment of the present invention organic electroluminescence device;
Fig. 3 is to form the device architecture schematic diagram after light emitting functional layer and cathode layer on an implementation spr substrate;
Fig. 4 is structural schematic diagram on the basis of Fig. 3 after coated thin film layer material.
Description of symbols:
10, substrate;11, anode array layer;12, pixel defining layer;13, light emitting functional layer;14, cathode layer;15, film Layer;16, impression block.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing Give presently preferred embodiments of the present invention.But the invention can be realized in many different forms, however it is not limited to this paper institute The embodiment of description.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more thorough Comprehensively.
It should be noted that it can directly on the other element when element is referred to as " being installed on " another element Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be direct connection To another element or it may be simultaneously present centering elements.When an element is considered as " connection " another element, it can To be directly to another element or may be simultaneously present centering elements.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases Any and all combinations of the listed item of pass.
The present invention is further elaborated by the following examples.
A kind of organic electroluminescence device of the present embodiment (as shown in Figure 1), comprising: substrate 10, anode array layer 11, pixel Define layer 12, light emitting functional layer 13, cathode layer 14 and film layer 15;
The anode array layer 11 is located on the substrate 10;
The pixel defining layer 12 is formed on the anode array layer 11, and in each sun on the anode array layer 11 It is cheated equipped with pixel extremely corresponding position;
The light emitting functional layer 13 is stacked in the pixel is cheated, and covers the anode;
The cathode layer 14 covers the light emitting functional layer 13 and the pixel defining layer 12;
The film layer 15 covers the cathode layer 14, and the base portion of the film layer 15 is filled in the pixel hole, described The top of film layer is equipped with multiple protrusions, between the pixel hole of the distance between adjacent described protrusion≤adjacent away from From, and the film layer is made of clear material, the refractive index of the film layer is between air refraction and the cathode layer Between refractive index.
It should be understood that the distance between shown protrusion is equal to or less than the distance between pixel hole, i.e., each pixel Hole can correspond to one or more protrusions.When each pixel hole corresponds to a protrusion, as shown in Figure 1;When each pixel is cheated When corresponding to multiple protrusions, as shown in Figure 2.
It should be understood that the protrusion of the formation array is only needed with the shape to raise upward, such as convex lens shape, circle Cylindricality, cone, polygonal pyramid type, frustoconical, truncated pyramid or arc-shaped etc., still, arc such as round and smooth with convex lens shape Degree has preferable effect.
It between air refraction and the refractive index of cathode layer, and can be refraction for the refractive index of film layer material The equally distributed single layer structure of rate, or the multilayered structure of refractive index gradient variation, when the refractive index ladder of the film layer When degree variation, refractive index gradually decreases on the direction far from substrate, such as refractive index is gradually reduced to by the range of 1.5-2.0 The range of 1.0-1.5.
Simultaneously in view of effectively stopping the space in water and oxygen, and effective use pixel hole, the film layer is maximum Thickness is not less than 0.5 μm.The film layer maximum gauge refers to the base portion lower surface that contacts from film layer with cathode layer to film layer The distance on the vertex of the upper surface of top bump.
The material of the film layer, can be organic material, be also possible to the mixing of inorganic material or multiple material Object, for example, can be made of at least one of following material: small organic molecule (molecular weight is lower than 2000 organic molecule) has Machine macromolecule resin (molecular weight is greater than 2000), organosilicon, metal oxide, metal sulfide, metal selenide, metal telluride Object, metal chloride, metal bromide, metal iodide, metal hydroxides, Si oxide, silicon oxynitride, silicon nitride, stone Black alkene, thin layer graphite, mica group compound, hydrotalcite-based compound, montmorillonite class compound.
It wherein at least include a kind of basis material, and include at least one when film layer is mixed by multiple material The simple substance or compound that kind stratified material, i.e. atom or molecule are in layered arrangement.The quality percentage of basis material and stratified material Than that can adjust as needed.
Preferably, the basis material of the film layer is made of at least one of following material: polyamide, polypropylene Cyanogen, polycarbonate, polymethyl methacrylate, polyethylene, gathers to benzene diethyl sulfone, poly- pair polybutylene terephthalate (PBT) Polyethylene terephthalate, polyethylene naphthalate, polyimides, polypropylene, polystyrene, polysulfones, polyvinyl chloride, poly- silicon Oxygen alkane, polyvinylidene fluoride, polyvinyl acetate, polyureas, polytetrafluoroethylene (PTFE) and epoxy resin.Above-mentioned one kind specifically can be used Or several combinations should be such that monomer polymerization is formed poly- when using polymer monomer with necessary heating or illumination methods Close object.
Preferably, the stratified material in the film layer is made of at least one of following material: graphene, thin layer stone Ink, mica group compound, hydrotalcite-based compound, montmorillonite class compound, metal sulfide, metal selenide, metal telluride Object, metal chloride, metal bromide, metal iodide, metal hydroxides.
It should be understood that perhaps molecule forms closs packing in layer to make water or oxygen to the atom of layered material Gas molecule can not penetrate.The presence of such stratified material, so that water or oxygen molecule can only pass through stratiform in film layer The gap of material and can not penetrate, therefore the path for making water or oxygen molecule pass through entire film layer increases and reduces water oxygen Transmitance.
The preparation method of above-mentioned organic electroluminescence device, includes the following steps:
S1, the underlay substrate comprising tft array and anode array layer is obtained;
S2, preparation pixel defining layer: pixel defining layer is prepared on Yu Suoshu anode array layer, and by photoetching process at this Corresponding pixel hole is prepared in pixel defining layer;
S3, preparation light emitting functional layer: the light emitting functional layer is prepared in above-mentioned pixel hole, the light emitting functional layer is at least Including one layer of luminescent layer;
S4, it prepares cathode layer: preparing cathode layer, the cathode layer in the light emitting functional layer and the pixel defining layer Cover the light emitting functional layer and the pixel defining layer;
1, pre-treatment
Before preparing light emitting functional layer, pre-treatment can be carried out, specific as follows:
Substrate with anode array layer and pixel defining layer is used into ultrasonic cleaning in alkaline cleaner and ultrapure water, with Afterwards with being dried with nitrogen, vacuum bakeout 30 minutes at 100 DEG C, with UV/ ozone treatment 10 seconds.
2, light emitting functional layer and cathode layer (as shown in Figure 3) are prepared
The top of anode, forms the electroluminescent cell of top emission type by way of inkjet printing and vapor deposition in pixel is cheated Part.The electroluminescent device of top emitting is collectively constituted by anode, light emitting functional layer and cathode.Wherein top cathode be it is transparent or Translucent, the light emitting functional layer between two electrodes is the organic material or inorganic material film of one or more layers film, At least contain one layer of luminescent layer, while may include one of following functions layer or a variety of: hole injection layer, hole transmission layer, Electronic barrier layer, hole blocking layer, electron transfer layer, electron injecting layer etc..And anode is the metal Ag with reflex.
It should be understood that the structure of above-mentioned device can be prepared in the following manner:
(1) hole injection layer: the example of hole injection layer material includes Amines, phthalocyanine compound, metal Oxide (such as tungsten oxide, molybdenum oxide, vanadium oxide), polythiophene class compound;Preferably, hole injection layer material is selected from aryl Aminated compounds.When preparation, hole-injecting material is dissolved in solvent, ink is made, the solvent of the ink may include following solvent In at least two: chloroform, toluene, dimethylbenzene, chlorobenzene, diphenyl ether, isopropanol, dimethylaniline, water.And the hole that will be obtained Injection material ink is injected in a manner of inkjet printing in pixel hole, forms uniform film-form knot by vacuum drying, baking Structure, the hole injection layer film with a thickness of 5-150nm, preferably with a thickness of 10-90nm.
(2) hole transmission layer: the example of hole mobile material includes polyaryl aminated compounds, polyarylamine and its derivative Object, polyvinyl carbazole and its derivative, polythiophene and its derivative;Preferably, hole transport layer material is selected from aryl amine Compound.Hole mobile material be dissolved in mixed solvent formed ink, the solvent of the ink may include in following instance at least Two kinds: chloroform, tetrahydrofuran, ethyl acetate, toluene, dimethylbenzene, chlorobenzene, diphenyl ether, isopropanol, dimethylaniline.Hole passes Defeated material ink is injected in a manner of inkjet printing in pixel hole, and the drawout on dried hole injection layer film passes through Vacuum drying, baking, formed covering hole injection layer hole transport layer film, hole transport layer film with a thickness of 5- 150nm, preferably with a thickness of 15-60nm.
(3) luminescent layer: luminescent layer includes the organic material and quantum of small molecule and high molecular transmitting fluorescence, phosphorescence Point material etc..Luminescent layer can be made of a kind of material, such as quantum dot light emitting material.Luminescent layer can also be by two kinds or two kinds The above material composition, wherein at least includes a kind of material of main part, and include at least a kind of dopant material.The example of material of main part Including carbazole compound or polymer containing aromatic substituent, Benzophenanthrene compound or polymerization containing aromatic substituent Object, replace containing fragrance and benzothiophenes or polymer, the compound in triazine class containing aromatic substituent or poly- Close object etc.;Preferably, material of main part is selected from carbazole compound or polymer containing aromatic substituent, contains aromatic substituent Benzophenanthrene compound or polymer.The example of dopant material includes the compound containing Ir element, the change containing Pt element Close object, the compound containing Cu (I), the compound containing Os element, delayed fluorescence class compound;Preferably, dopant material selects From the metal complex of also Ir element, the metal complex containing Pt element, delayed fluorescence class compound.Emitting layer material is molten Ink is formed in mixed solvent, the solvent of the ink includes at least two in following instance: chloroform, tetrahydrofuran, acetic acid Ethyl ester, toluene, dimethylbenzene, chlorobenzene, diphenyl ether, isopropanol, dimethylaniline.The ink of emitting layer material is in a manner of inkjet printing It injects in pixel hole, is unfolded on dried hole transport layer film upper berth, by being dried in vacuo, toasting, formation is covered in Luminous layer film on hole transmission layer, shine layer film with a thickness of 10-100nm, preferably with a thickness of 20-60nm.
(4) electron transfer layer: the example of electron transport material includes the compound containing aromatic substituent, is taken containing fragrance The oxadiazole compound of Dai Ji, the quinone compounds containing aromatic substituent, the triaizine compounds containing aromatic substituent, 8- hydroxyl Base quinoline metal complex etc.;Preferably, electron transport layer materials are selected from the triaizine compounds containing aromatic substituent, 8- hydroxyl Quinoline metal complex.Electron transfer layer adopts vapor deposition method preparation, with a thickness of 10-60nm, preferably with a thickness of 20- 50nm。
(5) cathode: transparent or semitransparent cathode is conductive oxide (such as zinc oxide of ITO, FTO, doping), thin layer Metal (such as alloy of Ag, Al, Mg or these types of metal) or graphene.It is heavy with sputtering or gas phase under vacuum conditions Product mode forms cathode, and cathode is covered in the top of light emitting functional layer and pixel defining layer, forms the shared top electricity of each electrode Pole.
S4, preparation film layer: preparing the film layer on the cathode layer, and the base portion of the film layer is filled in described Pixel hole, the top of the film layer are equipped with multiple protrusions, and the distance between adjacent described protrusion is less than the adjacent picture The distance between element hole.
The film layer the preparation method comprises the following steps:
(1) film layer material is dissolved in solvent, is then coated on the cathode layer, is dried under vacuum to 95- 99.9% solvent volatilization;
The composition material of the film layer is uniformly mixed, so that the composition material of the film layer is formed liquid and flows In order to print coating, the mode for forming liquid includes by wherein at least one material progress heating melting into liquid, or will The composition material of the film layer is added in solvent and forms liquefied mixture;
The film layer material is coated on electroluminescent display substrate with mode of printing, filler pixels hole, and Cover pixel defining layer and cathode layer (as shown in Figure 4);
Film layer material is pre-processed: when film layer material forms liquid in a manner of melting one of material component State, the then temperature for reducing fusible component reduce material flowability, and the glassy state for then maintaining the temperature at fusible component turns Between temperature and fusing point;When film layer material forms liquid in a manner of solvent is added, then make 95%- under vacuum conditions 99.9% most of solvent volatilizees to reduce the mobility of material, while also lacking there are 0.1%-5% in film layer material The ability measured solvent and material is made to retain machining deformation;
(2) impression block 16 is obtained, the impression block is equipped with multiple protrusions, using impression block to the film layer Coining manipulation is carried out, the protrusion is formed;
Coining processing is carried out to film layer material, the top of film layer is made to obtain the protrusion that arranges at array-like, protrusion it Between distance be less than or equal to the distance between pixel;
(3) vacuum drying removes residual solvent to get the film layer.
Vacuum heating treatment is carried out to film layer material, sufficiently to remove moisture or residual solvent therein, then in nitrogen It is cooled to room temperature under compression ring border to get the film layer.
In practice, for preparation film layer structure, it can be formed before encapsulation process, it can also be after encapsulation process It is formed or film layer itself is a component part in encapsulating structure.
It should be understood that can also further be sealed after the completion of above-mentioned film layer preparation to entire display base plate or device Dress protection.For example, the mode of thin-film package can be used, i.e., on the entire display base plate for including film layer structure, with the side PECVD Formula deposits 5nm-100 μm one or more layers encapsulating material, the example of encapsulating material include silicon nitride, silica, silicon oxynitride, The combination of one or more of organosilicon (polysiloxanes), aluminium oxide, zirconium oxide, aluminium nitride.
The present embodiment uses the processing method of " printing+coining ", has with the transparent material formation with appropriate index The film layer of protrusion array forms the packaging protection for completely cutting off water oxygen to organic electroluminescence device to improve the service life, while can also The light extraction efficiency for enhancing electroluminescent device forms a kind of transparent configuration with " light extraction+encapsulation " dual function.
The advantage of printing+coining mode used by the invention is, can be rapidly in the electroluminescent of large area Geometric figure required for being obtained on device.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.

Claims (8)

1. a kind of organic electroluminescence device characterized by comprising substrate, anode array layer, pixel defining layer, shine function Ergosphere, cathode layer and film layer;
The anode array layer is located on the substrate;
The pixel defining layer is formed on the anode array layer, and corresponding in each anode on the anode array layer It is cheated equipped with pixel position;
The light emitting functional layer is stacked in the pixel is cheated, and covers the anode;
The cathode layer covers the light emitting functional layer and the pixel defining layer;
The film layer is an overall structure, and the film layer covers the cathode layer, and the base portion of the film layer is filled in Pixel hole, the top of the film layer are equipped with multiple protrusions, the distance between adjacent described protrusion≤adjacent it is described The distance between pixel hole, and the film layer is made of clear material, the refractive index of the film layer is between air refraction Between the refractive index of the cathode layer;The film layer is made of multiple mixed materials, and the mixing material includes at least one Kind basis material and at least one stratified material, described matrix material are selected from: polyamide, polypropylene cyanogen, poly terephthalic acid Butanediol ester, polycarbonate, polymethyl methacrylate, polyethylene, it is poly- to benzene diethyl sulfone, polyethylene terephthalate, Polyethylene naphthalate, polypropylene, polystyrene, polysulfones, polyvinyl chloride, polysiloxanes, gathers inclined difluoro second at polyimides Alkene, polyvinyl acetate, polyureas, polytetrafluoroethylene (PTFE) or epoxy resin;Layered material is selected from: metal sulfide, metallic selenium Compound, metal telluride, metal chloride, metal bromide, metal iodide, metal hydroxides, graphene, thin layer stone Ink, mica group compound, hydrotalcite-based compound and montmorillonite class compound.
2. organic electroluminescence device according to claim 1, which is characterized in that the protrusion corresponds to the pixel Hole.
3. organic electroluminescence device according to claim 1, which is characterized in that the shape of the protrusion is convex lens Shape, cylindrical, cone, polygonal pyramid type, frustoconical, truncated pyramid or arc-shaped.
4. described in any item organic electroluminescence devices according to claim 1~3, which is characterized in that the base of the film layer The distance between upper surface of portion and the protrusion >=0.5 μm.
5. the preparation method of the described in any item organic electroluminescence devices of claim 1-4, which is characterized in that including walking as follows It is rapid:
Obtain the underlay substrate comprising tft array and anode array layer;
Preparation pixel defining layer: pixel defining layer is prepared on Yu Suoshu anode array layer, and is prepared into the pixel defining layer It is cheated to corresponding pixel;
Preparation light emitting functional layer: preparing the light emitting functional layer in above-mentioned pixel hole, and the light emitting functional layer includes at least one Layer luminescent layer;
It prepares cathode layer: preparing cathode layer in the light emitting functional layer and the pixel defining layer, the cathode layer covers institute State light emitting functional layer and the pixel defining layer;
Preparation film layer: preparing the film layer on the cathode layer, and the base portion of the film layer is filled in the pixel hole, The top of the film layer is equipped with multiple protrusions, and the distance between adjacent described protrusion is less than or equal to the adjacent pixel The distance between hole.
6. the preparation method of organic electroluminescence device according to claim 5, which is characterized in that the system of the film layer Preparation Method are as follows:
Film layer material is dissolved in solvent, is then coated on the cathode layer, the solvent of 95-99.9% is dried under vacuum to Volatilization;
Impression block is obtained, the impression block is equipped with multiple protrusions, is imprinted using impression block to the film layer Operation, forms the protrusion;
Vacuum drying removes residual solvent to get the film layer.
7. a kind of display panel, which is characterized in that include the described in any item organic electroluminescence devices of claim 1-4.
8. a kind of display device, which is characterized in that include display panel as claimed in claim 7.
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CN109166966A (en) * 2018-08-10 2019-01-08 深圳市华星光电半导体显示技术有限公司 A kind of preparation method and organic light emitting display of display device
CN111384286B (en) * 2018-12-29 2021-07-06 Tcl科技集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof
CN111180604B (en) * 2019-03-14 2022-10-25 广东聚华印刷显示技术有限公司 Packaging structure, preparation method thereof and display panel
CN110323353B (en) * 2019-04-24 2021-09-28 昆山工研院新型平板显示技术中心有限公司 OLED display panel and display device
CN110208886A (en) * 2019-05-23 2019-09-06 广东聚华印刷显示技术有限公司 Light extraction structures manufacturing method, dot structure and display panel
CN110376162A (en) * 2019-07-16 2019-10-25 湖北工程学院 A kind of graphene index sensor based on PIT effect
CN112310293A (en) * 2019-07-30 2021-02-02 陕西坤同半导体科技有限公司 Organic light-emitting device
CN111584742A (en) * 2020-05-13 2020-08-25 武汉华星光电半导体显示技术有限公司 Display panel and preparation method thereof
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CN113363403A (en) * 2021-06-09 2021-09-07 京东方科技集团股份有限公司 Display panel and display device
CN115535335B (en) * 2022-10-27 2024-06-14 重庆大学 Preparation device and method of giant electrorheological fluid variable-rigidity elastic ball group

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105531824A (en) * 2013-07-08 2016-04-27 皮瑟莱根特科技有限责任公司 Advanced light extraction structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG108260A1 (en) * 2001-06-29 2005-01-28 Inst Data Storage Flat panel display and method of manufacture
JP2012216454A (en) * 2011-04-01 2012-11-08 Seiko Epson Corp Light-emitting device and electronic apparatus
KR101859303B1 (en) * 2013-06-12 2018-06-28 미쯔비시 케미컬 주식회사 Light-extraction film for el, method for manufacturing light-extraction film for el, and planar light-emitting body
CN103715372B (en) * 2013-12-26 2017-08-25 京东方科技集团股份有限公司 OLED display panel and preparation method thereof
KR102352283B1 (en) * 2014-11-03 2022-01-18 삼성디스플레이 주식회사 Organic light-emitting display apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105531824A (en) * 2013-07-08 2016-04-27 皮瑟莱根特科技有限责任公司 Advanced light extraction structure

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