CN106998193B - S-band relay power amplifier filter integrated structure - Google Patents
S-band relay power amplifier filter integrated structure Download PDFInfo
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- CN106998193B CN106998193B CN201710226941.0A CN201710226941A CN106998193B CN 106998193 B CN106998193 B CN 106998193B CN 201710226941 A CN201710226941 A CN 201710226941A CN 106998193 B CN106998193 B CN 106998193B
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- 230000003321 amplification Effects 0.000 claims abstract description 32
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 32
- 238000002955 isolation Methods 0.000 claims abstract description 26
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000005452 bending Methods 0.000 claims description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/171—A filter circuit coupled to the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses an integrated structure of an S-band relay power amplifier filter, which comprises a box body, a first cavity filter, a second cavity filter and an integrated circuit, wherein the box body comprises a base and a U-shaped isolation fence arranged on the base, and the integrated circuit is arranged on the surface of the base in the isolation fence; the integrated circuit comprises two power amplifying circuits, the two power amplifying circuits are isolated by a U-shaped structure of the isolation fence, and the tail ends of the two power amplifying circuits are isolated from the side wall of the box body and the cover plate through the cavity filter. The isolation fence on the box body is designed in a U-shaped structure, and the electromagnetic interference between the two paths of power amplification circuits can be effectively shielded by adding the characteristics of an aluminum alloy material, so that a dual-channel power amplifier is realized; the aluminum alloy box body ensures the heat dissipation performance of the device and improves the reliability of the circuit; the method has the advantages of miniaturization, high integration and the like; the flexible substrate is adopted, so that the reliability of the circuit is improved, and the flexible substrate is suitable for aerospace products.
Description
Technical Field
The invention belongs to the technical field of microwave radio frequency circuits, and particularly relates to an integrated structure of an S-band relay power amplifier filter.
Background
The microwave power amplifier has the main functions of amplifying microwave signals in power, amplifying required signals and simultaneously amplifying received interfering stray signals, generating harmonic signals of the required signals, filtering the output signals after amplifying the signals, wherein the power of the output signals of the power amplifier is high, and the cavity filter with large volume is needed for filtering the signals to meet the reliability requirement.
Therefore, how to miniaturize the power amplifier and improve the efficiency has become a technical problem to be solved in the present industry.
Disclosure of Invention
In order to overcome the miniaturization problem in the prior art, the invention provides an integrated structure of an S-band relay power amplifier filter. The specific technical scheme of the invention is as follows:
comprises a box body, a first cavity filter, a second cavity filter and an integrated circuit,
the box body is made of aluminum alloy; the box body comprises a base and an isolation fence forming a U-shaped isolation area on the base, and the circuit is arranged on the base;
the integrated circuit comprises a power divider, a first path of power amplifying circuit and a second path of power amplifying circuit;
the first power amplification circuit and the second power amplification circuit respectively comprise an isolator, a first electrically-tunable attenuator, a first-stage drive amplifier, a second-stage drive amplifier and a power amplifier which are connected in sequence; the power amplifier of the first power amplifying circuit is also connected with the first cavity filter for output, and the power amplifier of the second power amplifying circuit is also connected with the second cavity filter for output; the second-stage drive amplifier and the power amplifier in the first path of power amplification circuit are connected through a third-stage drive amplifier;
the power divider comprises an input end, a first output end and a second output end; a first output end of the power divider is connected to the isolator of the first path of power amplification circuit, and a second output end of the power divider is connected to the isolator of the second path of power amplification circuit; a microwave signal is input from an input end of the power divider, the power divider divides the microwave signal into two paths, and one path of the microwave signal is processed and amplified by the first path of power amplifying circuit and then output; the other path of microwave signal is output through the second path of power amplifying circuit;
the power divider is arranged in a top end bending area of the U-shaped isolation area, and the first power amplification circuit and the second power amplification circuit are respectively arranged in two parallel branch areas of the U-shaped isolation area and are isolated from each other, wherein the first cavity filter and the second cavity filter are positioned at the opening side of the U-shaped isolation area, and the two cavity filters are isolated from each other through a cavity wall;
an input terminal is arranged at one end of the base and is connected with the input end of the power divider; the other end of the base is provided with two output terminals, and the two output terminals are respectively connected with the output end of the first cavity filter and the output end of the second cavity filter.
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the S-band relay power amplifier filter integrated structure, the filter is integrated into the fixed box body, and meanwhile, the fixed volume is reduced by adopting a laminated structure design;
(2) according to the S-band relay power amplifier filter integrated structure, the isolation fence on the box body adopts a U-shaped structure and a closed design of the side wall of the cavity of the filter, and the characteristic of an aluminum alloy material is added, so that electromagnetic interference between two paths of power amplification circuits can be effectively shielded, and a dual-channel power amplifier can be realized;
(3) the S-band relay power amplifier filter integrated structure provided by the invention has the characteristics of simple circuit and easiness in implementation, has certain universality, and can be widely applied to electronic systems such as satellite communication, radar, measurement and control, navigation, countermeasure and the like.
Drawings
FIG. 1 is a schematic structural diagram of a U-shaped isolation region according to the present invention;
FIG. 2 is a schematic circuit diagram of an integrated circuit of the present invention;
fig. 3 is a block diagram of the present invention.
Detailed Description
The present invention will now be described in detail by way of example with reference to the accompanying drawings.
As shown in fig. 1-3, the integrated structure of the S-band relay power amplifier filter comprises a box body, a first cavity filter, a second cavity filter and an integrated circuit, wherein the box body is made of aluminum alloy; the box body comprises a base and an isolation fence forming a U-shaped isolation area on the base, and the circuit is arranged on the base; the isolation fence is made of aluminum alloy.
The integrated circuit comprises a power divider, a first path of power amplifying circuit and a second path of power amplifying circuit; the integrated circuit is packaged by adopting a flexible substrate.
The first power amplification circuit and the second power amplification circuit respectively comprise an isolator, a first electrically-tunable attenuator, a first-stage drive amplifier, a second-stage drive amplifier and a power amplifier which are connected in sequence; the power amplifier of the first power amplifying circuit is also connected with the first cavity filter for output, and the power amplifier of the second power amplifying circuit is also connected with the second cavity filter for output; and the second-stage drive amplifier and the power amplifier in the first path of power amplification circuit are connected through a third-stage drive amplifier.
The first path of power amplifying circuit has larger amplifying power output through more amplifying levels, so that the first path of power amplifying circuit is different from the second path of power amplifying circuit in output power. In one embodiment, the power supply control circuit, the first power supply module and the second power supply module are also arranged; the first power supply module is connected with the first path of power amplifying circuit and the first cavity filter for power supply; and the second power supply module is connected with the second power amplification circuit and the second cavity filter for power supply. The first power supply module and the second power supply module are also connected with the power supply control circuit, and the power supply control circuit controls the work of the first power supply module and the second power supply module according to an external control signal so as to control the work output of the first path of power amplification circuit and the second path of power amplification circuit. Thereby accommodating more application requirements.
The power divider comprises an input end, a first output end and a second output end; a first output end of the power divider is connected to the isolator of the first path of power amplification circuit, and a second output end of the power divider is connected to the isolator of the second path of power amplification circuit; a microwave signal is input from an input end of the power divider, the power divider divides the microwave signal into two paths, and one path of the microwave signal is processed and amplified by the first path of power amplifying circuit and then output; the other path of microwave signal is output through the second path of power amplifying circuit;
the power divider is arranged in a top end bending area of the U-shaped isolation area, and the first power amplification circuit and the second power amplification circuit are respectively arranged in two parallel branch areas of the U-shaped isolation area and are isolated from each other, wherein the first cavity filter and the second cavity filter are positioned at the opening side of the U-shaped isolation area, and the two cavity filters are isolated from each other through a cavity wall;
an input terminal is arranged at one end of the base and is connected with the input end of the power divider; the other end of the base is provided with two output terminals, and the two output terminals are respectively connected with the output end of the first cavity filter and the output end of the second cavity filter.
The integrated structure of the S-band relay power amplifier filter comprises a box body, a cover body, a filter and an integrated circuit, wherein the integrated circuit is arranged in the box body;
the box body and the cover body are both made of aluminum alloy materials; the box body comprises a base and a U-shaped isolation fence arranged on the base, and the circuit is arranged on the surface of the base and is positioned inside the isolation fence;
the integrated circuit comprises a power divider, a first power amplifying circuit and a second power amplifying circuit. The first path of power amplification circuit comprises an isolator, an electrically tunable attenuator, a first-stage drive amplifier, a second-stage drive amplifier, a third-stage drive amplifier, a power amplifier and a cavity filter, and the second path of power amplification circuit comprises the isolator, the electrically tunable attenuator, the first-stage drive amplifier, the second-stage drive amplifier, the power amplifier and the cavity filter; the power divider comprises an input end, a first output end and a second output end, the first output end of the power divider is connected to the first path of power amplifying circuit, and the second output end of the power divider is connected to the second path of power amplifying circuit; a microwave signal is input from the input end of the power divider, the power divider divides the microwave signal into two paths, and one path of microwave signal passes through an isolator, an electrically tunable attenuator, a first-stage drive amplifier, a second-stage drive amplifier, a third-stage drive amplifier and a power amplifier in sequence and is output by a cavity filter; the other path of microwave signal sequentially passes through an isolator, an electrically-tuned attenuator, a first-stage drive amplifier, a second-stage drive amplifier and a power amplifier and is output by a cavity filter;
an input terminal is arranged at one end of the base and is connected with the input end of the power divider; the other end of the base is provided with two output terminals which are respectively connected with the output end of the first power amplification circuit cavity filter and the output end of the second power amplification circuit cavity filter; the U-shaped structure of the isolation fence is combined with the side wall of the cavity of the filter to isolate the first power amplification circuit from the second power amplification circuit.
The above disclosure is only for a few specific embodiments of the present application, but the present application is not limited to any variations that can be made by those skilled in the art, and should fall within the scope of the present application.
Claims (3)
- An integrated structure of an S-band relay power amplifier filter comprises a box body, a first cavity filter, a second cavity filter and an integrated circuit, and is characterized in that,the box body is made of aluminum alloy; the box body comprises a base and an isolation fence forming a U-shaped isolation area on the base, and the circuit is arranged on the base;the integrated circuit comprises a power divider, a first path of power amplifying circuit and a second path of power amplifying circuit;the first power amplification circuit and the second power amplification circuit respectively comprise an isolator, a first electrically-tunable attenuator, a first-stage drive amplifier, a second-stage drive amplifier and a power amplifier which are connected in sequence; the power amplifier of the first power amplifying circuit is also connected with the first cavity filter for output, and the power amplifier of the second power amplifying circuit is also connected with the second cavity filter for output; the second-stage drive amplifier and the power amplifier in the first path of power amplification circuit are connected through a third-stage drive amplifier;the power divider comprises an input end, a first output end and a second output end; a first output end of the power divider is connected to the isolator of the first path of power amplification circuit, and a second output end of the power divider is connected to the isolator of the second path of power amplification circuit; a microwave signal is input from an input end of the power divider, the power divider divides the microwave signal into two paths, and one path of the microwave signal is processed and amplified by the first path of power amplifying circuit and then output; the other path of microwave signal is output through the second path of power amplifying circuit;the power divider is arranged in a top end bending area of the U-shaped isolation area, and the first power amplification circuit and the second power amplification circuit are respectively arranged in two parallel branch areas of the U-shaped isolation area and are isolated from each other, wherein the first cavity filter and the second cavity filter are positioned at the opening side of the U-shaped isolation area, and the two cavity filters are isolated from each other through a cavity wall;an input terminal is arranged at one end of the base and is connected with the input end of the power divider; the other end of the base is provided with two output terminals, and the two output terminals are respectively connected with the output end of the first cavity filter and the output end of the second cavity filter.
- 2. The integrated structure of the S-band relay power amplifier filter of claim 1, wherein the integrated circuit is packaged by a flexible substrate.
- 3. The integrated structure of the S-band relay power amplifier filter of claim 1, wherein the isolation fence is made of aluminum alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710226941.0A CN106998193B (en) | 2017-04-06 | 2017-04-06 | S-band relay power amplifier filter integrated structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710226941.0A CN106998193B (en) | 2017-04-06 | 2017-04-06 | S-band relay power amplifier filter integrated structure |
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| Publication Number | Publication Date |
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| CN106998193A CN106998193A (en) | 2017-08-01 |
| CN106998193B true CN106998193B (en) | 2020-12-22 |
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| CN201710226941.0A Active CN106998193B (en) | 2017-04-06 | 2017-04-06 | S-band relay power amplifier filter integrated structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101930802B1 (en) * | 2017-01-23 | 2018-12-19 | (주)에프씨아이 | CMOS Transceiver Having Intergated Power Amplifier |
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Address after: 201109 Minhang District, Shanghai Road, No. 1777 spring Applicant after: Shanghai Spaceflight Institute of TT&C And Telecommunication Address before: 200080 Shanghai city Hongkou District street Xingang Tianbao Road No. 881 Applicant before: Shanghai Spaceflight Institute of TT&C And Telecommunication |
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