CN106997858B

CN106997858B - Substrate wet processing device and single wafer etching and cleaning device comprising same

Info

Publication number: CN106997858B
Application number: CN201610051632.XA
Authority: CN
Inventors: 吴宗恩; 王良元
Original assignee: HONGSU TECH Co Ltd
Current assignee: HONGSU TECH Co Ltd
Priority date: 2016-01-26
Filing date: 2016-01-26
Publication date: 2020-01-21
Anticipated expiration: 2036-01-26
Also published as: CN106997858A

Abstract

The invention provides a substrate wet processing device and a single wafer etching and cleaning device comprising the same. The spin chuck is used for holding and rotating a substrate. The transmission main shaft is connected with the rotary chuck and used for driving the rotary chuck. The back washing seat is arranged around the rotary chuck and the transmission main shaft, is provided with a liquid nozzle and is used for providing liquid to clean the bottom surface of the substrate, and comprises a plurality of assemblies, wherein a gap is formed between two adjacent assemblies. The at least one sealing element is arranged in each gap and used for isolating leakage of liquid and gas.

Description

Substrate wet processing device and single wafer etching and cleaning device comprising same

[ technical field ] A method for producing a semiconductor device

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate wet processing apparatus and a single wafer etching and cleaning apparatus including the same.

[ background of the invention ]

In semiconductor wafer, display substrate, solar substrate, LED substrate and the like, a plurality of processing steps are required to be performed on the substrate, for example, a processing solution (such as chemicals or deionized water) is sprayed on the surface of the wafer to perform wet processing procedures such as etching and cleaning of the wafer. Referring to fig. 1, fig. 1 is a schematic cross-sectional view of a conventional spin etch cleaning apparatus. The conventional spin etching and cleaning machine 10 includes an etching chamber 12, a carrier 14 is disposed in the etching chamber 12 for carrying and fixing a wafer W, a spindle 16 below the carrier 14 can rotate at high and low speeds according to the setting requirements of various process parameters, so as to drive the wafer W to rotate, and an etching solution 19 flows down from a liquid supply unit 18 above the wafer W to etch the front surface of the wafer W.

In practice, the etching chamber 12 also has a plurality of mechanisms, such as motors, fluid nozzles (not shown) for cleaning the bottom of the wafer, etc., under the stage 14, and the etching solution 19 is usually an acidic solution, such as nitric acid (HNO), during etching process₃) And hydrofluoric acid (HF) and the like, and these etching solutions 19 generate acid gas during the reaction, and the acid gas is introduced into the lower mechanism area along with the precipitation of the airflow filtered by HEPA (high efficiency air filtration) to erode the mechanism. In addition, when the acid liquid remains on the surface of the element of the fluid nozzle, the acid liquid flows into the mechanism region along the gap of the element due to capillary phenomenon, and erodes the mechanism.

[ summary of the invention ]

In view of the above, in order to prevent the etching solution or the acid gas formed by the etching solution from corroding the mechanism below the chamber, the present invention provides a wet substrate processing apparatus, which isolates the possible gap of the back washing seat through a sealing member to isolate the etching solution or the corrosive gas from corroding the mechanism area.

Another object of the present invention is to provide a single wafer etching and cleaning apparatus, which employs the substrate wet processing apparatus to prevent etching solution or corrosive gas from corroding the mechanism area.

To achieve the above objects, the present invention provides a wet processing apparatus for a substrate, which includes a spin chuck, a spindle, a back washing seat, and at least one sealing member. The spin chuck is used to hold and rotate a substrate. The transmission main shaft is connected with the rotary chuck and used for driving the rotary chuck. The back washing seat is arranged around the rotary chuck and the transmission main shaft, is provided with a liquid nozzle and is used for providing liquid to clean the bottom surface of the substrate, and comprises a plurality of assemblies, wherein a gap is formed between two adjacent assemblies. The at least one sealing element is arranged in each gap and used for isolating leakage of liquid and gas.

In a preferred embodiment, the gap is annular and each seal is an O-ring.

In a preferred embodiment, the substrate wet processing apparatus further comprises a mechanism area defined below the drive spindle and the back wash seat, wherein the at least one seal is configured to prevent liquids and gases from entering the mechanism area.

In a preferred embodiment, the plurality of components includes a main body, an upper compression ring, and a lower compression ring. The main body is arranged around the transmission main shaft in a surrounding manner and is positioned below the rotary chuck. The upper pressing ring is arranged around the main body and has a preset distance with the bottom surface of the substrate, and a first gap is formed between the upper pressing ring and the main body. The lower pressing ring is arranged around the main body and below the upper pressing ring, and a second gap is formed between the lower pressing ring and the main body.

In this preferred embodiment, the body has a first annular groove at the first gap and a second annular groove at the second gap, the at least one seal includes a first O-ring and a second O-ring disposed in the first annular groove and the second annular groove, respectively.

In this preferred embodiment, the plurality of components further includes a shaft seal member disposed around the drive shaft and below the main body, and a third gap is formed between the shaft seal member and the main body. In addition, the body has a third annular groove at the third gap, and the at least one seal further includes a third O-ring disposed in the third annular groove.

In this preferred embodiment, an annular gas nozzle is formed between the upper and lower press rings for forming a gas wall between the bottom surfaces of the substrates.

To achieve the above-mentioned another objective, the present invention provides a single wafer etching and cleaning apparatus including the substrate wet processing apparatus of the above-mentioned embodiment. The substrate wet processing device comprises a rotary chuck, a transmission main shaft, a back washing seat and at least one sealing element. The spin chuck is used for holding and rotating a wafer. The transmission main shaft is connected with the rotary chuck and used for driving the rotary chuck. The back washing seat is arranged around the rotary chuck and the transmission main shaft, is provided with a liquid nozzle and is used for providing liquid to clean the bottom surface of the wafer, and comprises a plurality of assemblies, wherein a gap is formed between two adjacent assemblies. The at least one sealing element is arranged in each gap and used for isolating leakage of liquid and gas.

Compared with the prior art, the substrate wet processing device and the single wafer etching and cleaning device comprising the same seal the gaps of the components of the back washing seat through the O-rings, and overcome the problem that acid gas can sink and be introduced into a lower mechanism area along with airflow filtered by HEPA to erode the mechanism in the prior art. Meanwhile, the problem that the capillary phenomenon flows into the mechanism area along the clearance of the component and then erodes the mechanism is solved.

The foregoing and other objects, features, and advantages of the invention will be apparent from the following more particular description, as illustrated in the accompanying drawings in which:

[ description of the drawings ]

FIG. 1 is a schematic cross-sectional view of a conventional spin etch cleaning apparatus;

FIG. 2 is a schematic cross-sectional view of a substrate wet processing apparatus according to a preferred embodiment of the present invention;

FIG. 3 is a schematic top view of the substrate wet processing apparatus according to the preferred embodiment;

FIG. 4 is a schematic cross-sectional view of a single wafer etching and cleaning apparatus according to a preferred embodiment of the present invention.

[ detailed description ] embodiments

The preferred embodiments of the present invention will be described in detail with reference to the following description and the accompanying drawings, wherein like reference numerals designate identical or similar elements in the various views.

Referring to fig. 2, fig. 2 is a schematic cross-sectional view of a substrate wet processing apparatus according to a preferred embodiment of the invention. The substrate wet processing apparatus 20 of the present embodiment is used for rotating a substrate 30 to perform wet processing, which may include etching, rinsing, drying, etc., wherein the substrate 30 may be a semiconductor wafer, a display substrate, a solar substrate, an LED substrate, etc. The substrate wet processing apparatus 20 of the present embodiment includes a spin chuck 22, a drive spindle 24, a back rinse seat 26, and at least one seal 28, which may be disposed in an etch chamber (not shown).

The spin Chuck (Chuck)22 is used for holding and rotating the substrate 30, and preferably, the spin Chuck 22 can generate a vacuum negative pressure to suck and fix the substrate 30. The transmission main shaft 24 is connected to the spin chuck 22 and is used for driving the spin chuck 22. Specifically, the drive shaft 24 may be connected to a power source such as a motor (not shown) that provides a rotational driving force at different rotational speeds to rotate the substrate 30.

Referring to fig. 2 and 3, fig. 3 is a schematic top view of a wet processing apparatus for a substrate according to the preferred embodiment, wherein fig. 2 is a cross-sectional view taken along line AA' of fig. 3, and fig. 3 does not show the substrate 30 for clarity. The back wash basin 26 is disposed around the spin chuck 22 and the spindle 24, and the back wash basin 26 has a liquid nozzle 27 for supplying liquid to wash the bottom surface 32 of the substrate 30. In detail, the liquid nozzle 27 may spray deionized water (DI water) to wash the bottom surface 32 of the substrate 30, and protect the bottom surface 32 from corrosion.

Referring to FIG. 2, the back seat 26 includes a plurality of components (described in detail below), wherein a gap 260 is formed between two adjacent components. The at least one seal 28 is disposed in each gap 260 for isolating leakage of liquid and gas. In the present embodiment, as shown in FIG. 3, the gap 260 is annular and each seal 28 is an O-ring (as shown in FIG. 2). It should be noted that the seal 28 of the present invention is not limited to practice with an O-ring, and other seals, such as oil seals, mastics, etc., are within the scope of the present invention. In this embodiment, the substrate wet processing apparatus 20 further includes a mechanism area 40, the mechanism area 40 is defined below the spindle 24 and the back washing seat 26, and the mechanism area 40 may include a motor, a liquid pipeline, a gas pipeline, and the like. Wherein the at least one sealing member 28 is used to prevent liquid and gas from entering the mechanism area 40, so as to prevent etching liquid or acid gas from corroding the motor, the liquid pipeline, the gas pipeline, and the like.

Further, the components include a body 262, an upper compression ring 264, and a lower compression ring 266. The body 262 is disposed around the drive spindle 24 and below the spin chuck 22. The upper pressing ring 264 is disposed around the main body 262 and has a predetermined distance D with the bottom surface 32 of the substrate 30, wherein a first gap 263 is formed between the upper pressing ring 264 and the main body 262. The lower pressing ring 266 is arranged around the main body 262 in a surrounding manner and is arranged below the upper pressing ring 264, wherein a second gap 265 is formed between the lower pressing ring 266 and the main body 262. In this embodiment, the upper pressing ring 264 and the lower pressing ring 266 are fixed by the screw 295. In addition, the main body 262 has a first annular groove 272 at the first gap 263 and a second annular groove 274 at the second gap 265, the at least one seal 28 includes a first O-ring 282 and a second O-ring 284, the first O-ring 282 and the second O-ring 284 are disposed in the first annular groove 272 and the second annular groove 274, respectively.

As shown in fig. 2, it is worth mentioning that the plurality of components further include a shaft sealing member 268, the shaft sealing member 268 is disposed around the transmission main shaft 24 and located below the main body 262, the shaft sealing member 268 is used for sealing the gap between the rotating transmission main shaft 24 and the main body 262 and the transmission main shaft 24, and specifically, the shaft sealing member 268 is provided with an oil seal 269, and the oil seal 269 can maintain the seal when the transmission main shaft 24 rotates. A third gap 267 is defined between the shaft seal 268 and the body 262. In addition, the main body 262 has a third annular groove 276 at the third gap 267, and the at least one seal 28 further includes a third O-ring 286, the third O-ring 286 being disposed in the third annular groove 276. Accordingly, the first O-ring 282, the second O-ring 284 and the third O-ring 286 block the possibility of the etching solution or acid gas from entering the mechanism area 40.

As shown in fig. 2 and 3, an annular gas nozzle 290 is further formed between the upper pressing ring 264 and the lower pressing ring 266, and the annular gas nozzle 290 is used for forming a gas wall between the bottom surfaces 32 of the substrates 30 to prevent the etching solution from eroding the bottom surfaces 32.

The single wafer etching cleaning apparatus using the substrate wet processing apparatus 20 of the above embodiment will be described in detail below. Referring to fig. 4, fig. 4 is a cross-sectional view of a single wafer etching and cleaning apparatus according to a preferred embodiment of the invention. The single wafer etching and cleaning apparatus 50 of the present embodiment includes the substrate wet processing apparatus 20, the etching chamber 12, and the liquid supply unit 18 of the above embodiments. The substrate wet processing apparatus 20 includes a spin chuck 22, a drive spindle 24, a back wash station 26, and at least one seal 28. The spin chuck 22 is used to hold and rotate a wafer W. The transmission main shaft 24 is connected to the spin chuck 22 and is used for driving the spin chuck 22. The back wash station 26 is disposed around the spin chuck 22 and the spindle 24, the back wash station 26 has a liquid nozzle 27 (shown in fig. 3) for providing liquid to clean the bottom surface 32 of the wafer W, and the back wash station 26 includes a plurality of components, wherein a gap 260 is formed between two adjacent components. The at least one seal 28 is disposed in each gap 260 for isolating leakage of liquid and gas. The detailed description of the above components is not repeated herein before.

In summary, the substrate wet processing apparatus 20 and the single wafer etching cleaning apparatus 50 including the same of the present invention seals the gaps 260 of the components of the back scrubber 26 through the plurality of sealing members 28, thereby overcoming the problem of erosion of the mechanism due to acid gas being introduced into the lower mechanism area 40 along with HEPA filtered gas flow in the prior art. At the same time, the problem of corrosion due to capillary phenomena, which follow the gap of the component into the mechanism area 40, is overcome.

While the invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be determined by the appended claims.

Claims

1. A substrate wet processing apparatus, comprising:

a spin chuck for holding and spinning the substrate;

the transmission main shaft is connected with the rotary chuck and used for driving the rotary chuck;

the back washing seat is arranged around the rotary chuck and the transmission main shaft, is provided with a liquid nozzle and is used for providing liquid to clean the bottom surface of the substrate, and comprises a plurality of assemblies, wherein a gap is formed between two adjacent assemblies; the plurality of components includes:

the main body is annularly arranged around the transmission main shaft and is positioned below the rotary chuck;

the upper pressing ring is arranged around the main body in a surrounding mode and has a preset distance with the bottom surface of the substrate, and a first gap is formed between the upper pressing ring and the main body; and

the lower pressing ring is arranged around the main body in a surrounding manner and is arranged below the upper pressing ring, and a second gap is formed between the lower pressing ring and the main body;

the body has a first annular groove at the first gap and a second annular groove at the second gap;

a mechanism area defined below the transmission main shaft and the back washing seat; and

at least one sealing element is arranged in each gap and used for isolating liquid and gas from leaking, the at least one sealing element comprises a first O-shaped ring and a second O-shaped ring, and the first O-shaped ring and the second O-shaped ring are respectively arranged in the first annular groove and the second annular groove.

2. The substrate wet processing apparatus of claim 1, wherein the gap is annular and each seal is an O-ring.

3. The apparatus of claim 1, wherein the at least one seal is configured to prevent liquids and gases from entering the mechanism region.

4. The apparatus of claim 3, wherein the plurality of components further comprises a shaft seal disposed around the drive shaft and below the body, the shaft seal and the body having a third gap therebetween.

5. The apparatus of claim 4, wherein the body has a third annular groove at the third gap, the at least one seal further comprising a third O-ring disposed in the third annular groove.

6. The substrate wet processing apparatus according to claim 4, wherein an annular gas nozzle is formed between the upper and lower pressure rings, the annular gas nozzle being configured to form a gas wall between the bottom surfaces of the substrates.

7. A single wafer etching cleaning apparatus comprising the substrate wet processing apparatus according to any one of claims 1 to 6.