CN106981523B - A kind of double-deck TiO applied to rear-face contact solar cellxStructure - Google Patents
A kind of double-deck TiO applied to rear-face contact solar cellxStructure Download PDFInfo
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- CN106981523B CN106981523B CN201710216880.XA CN201710216880A CN106981523B CN 106981523 B CN106981523 B CN 106981523B CN 201710216880 A CN201710216880 A CN 201710216880A CN 106981523 B CN106981523 B CN 106981523B
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- 229910003087 TiOx Inorganic materials 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 238000002360 preparation method Methods 0.000 claims abstract description 17
- 239000002210 silicon-based material Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005525 hole transport Effects 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of double-deck TiO applied to rear-face contact solar cellxStructure overleaf contacts solar cell front silicon materials surface and forms one layer of passivation TiOxLayer, in passivation TiOxOne layer of n-type doping and the higher n-TiO of doping concentration are re-formed on layerxLayer；Form rear-face contact solar cell front silicon face-passivation TiOxLayer-n-TiOxLayer structure.The structure includes one layer of passivation TiO that well passivated can be formed to silicon waferxThe TiO of layer and one layer of n-type dopingxLayer.Passivation silicon wafer front surface can be played simultaneously using this structure, forms the effects of surface field, enhancing hole transport and antireflection layer, and the structure (can be no more than 300 °C) at low temperature and prepare.The structure and preparation process of rear-face contact solar cell will be simplified using structure proposed by the invention.
Description
Technical field
The invention belongs to solar cell fields, also belong to field of semiconductor devices, are related to the structure design of silicon solar cell.
Background technique
Crystal-silicon solar cell occupies most of share of Present Global solar cell yield, photoelectric conversion efficiency compared with
Height, performance are stable, structure is simple, are readily produced.Within the past more than ten years, the cost of crystal-silicon solar cell is constantly reduced,
Efficiency is continuously improved.The efficiency of high efficiency crystalline silicon solar cell modules has surmounted 20% at present, the following crystal-silicon solar cell
It will develop towards higher efficiency.Rear-face contact solar cell (abbreviation IBC battery) is one of high efficiency crystalline silicon solar cell.
It is light absorbing material that IBC battery, which generallys use n-type silicon, is placed on battery back by p-type emitter region and with the diffusion contact area of N-shaped
Face.The front of battery can be entered inside solar cell due to no metal grid lines, more sunlights.In addition the p-type of cell backside
Area and n-type area can carry out heavy doping, to improve battery open circuit voltage.Currently based on homojunction crystalline silicon IBC battery most
High conversion efficiency reaches 25.2%.Based on the high efficiency of IBC battery, China " energy technology innovates " 13 " planning " clearly will
The production domesticization of IBC battery is set to target, it is contemplated that IBC battery 25MW Showcase Production Line will be built up in 5 years.
Due to the optical absorption characteristics of semiconductor, most of photo-generated carrier results from battery front side table in IBC solar cell
Near face.Compared to the solar cell of conventional structure, minority carrier needs to transmit longer distance and could be received in IBC battery
Collection.Therefore, IBC battery requires the minority carrier life time of silicon materials higher.In addition IBC battery can also prepare surface field in front,
Auxiliary minority carrier hole transports.In addition to this, the front of IBC battery also needs to prepare antireflection layer and passivation layer, with
It reduces the loss of incident light and inhibits surface recombination.This makes IBC battery front side structure and preparation process extremely complex.
Summary of the invention
The purpose of the invention is to simplify the structure and its preparation process of IBC battery front side, propose that one kind can be applied to
The double-deck TiO of IBC battery front sidex(x ≈ 2) structure, the structure can play simultaneously passivation silicon wafer front surface, formed surface field,
The effects of enhancing hole transport and antireflection layer, and the structure (can be no more than 300 °C) at low temperature and prepare.Using this
Structure can simplify the preparation process of IBC battery and reduce the consumption of the energy in preparation process.
The present invention proposes a kind of double-deck TiO that can be applied to IBC battery front sidexStructure (structural schematic diagram is shown in attached drawing 1), can
Simplify the structure and preparation process of IBC battery.In the structure, close to the internal layer TiO of IBC battery front side silicon facexIt mainly rises blunt
The effect on SiClx surface.The TiOxThe preparation of the techniques such as atomic layer epitaxy can be used in layer, through TiOxThe silicon chip surface recombination rate of passivation
10cm/s can be lower than.The TiO of outer layerxLayer is the higher n-type semiconductor of doping concentration, can form direction with n-type silicon and be directed toward battery
Internal surface built in field, the electric field can enhance transporting for minority carrier hole in n-type silicon.In addition, due to TiOxValence
Band will be far below the valence band of silicon, and potential barrier can be formed to silicon materials inner cavity by being formed by valence band rank, and hole is hindered to lean near surface,
To reduce surface recombination.TiOxThe optical band gap of material is wider, limited to the absorption of sunlight, will not be to the short-circuit electricity of battery
Road produces bigger effect.And TiOxInherently a kind of reflection-reducing material, by controlling TiOxThe thickness of layer, can reduce too
The reflection loss of sunlight.
The present invention is achieved through the following technical solutions.
A kind of double-deck TiO applied to rear-face contact solar cell of the present inventionxStructure, it is characterized in that in IBC electricity
Pond front silicon materials surface forms one layer of passivation TiO to silicon face with well passivated effectxLayer, in passivation TiOxOn layer
Re-form one layer of n-type doping and the higher n-TiO of doping concentrationxLayer.Form IBC battery front side silicon face-passivation TiOxLayer-n-
TiOxLayer structure.
The forming process of structure of the present invention is: being handled IBC battery front side the silicon table so that fresh first
Face exposes；One layer of passivation TiO is prepared using atom layer deposition process etc.xLayer, the TiOxLayer provides silicon chip surface good blunt
Change；In passivation TiOxThe TiO of one layer of n-type doping of process deposits such as evaporation or sputtering is used on layerxLayer, pass through in deposition process
It adjusts preparation parameter and adjusts prepared TiOxDoping concentration etc. so that surface forms the built in field of proper strength.In addition, control
Outer layer TiO processedxTo suitable thickness, antireflection layer is formed to reduce the reflection loss of incident light.
It is of the present invention that the TiO with well passivated is formed to silicon waferxLayer (passivation TiOxLayer) it is amorphous semiconductor,
Conduction type is Intrinsical or weak N-shaped.
The TiO of n-type doping of the present inventionxLayer (n-TiOxLayer) be crystalline state semiconductor, doping concentration be 1 ×
1016-1×1020cm-3。
The double-deck TiO that can be applied to IBC battery front side proposed by the inventionxStructure, structure is simple and can play simultaneously
It is passivated silicon wafer front surface, forms the effects of surface field, enhancing hole transport and antireflection layer, the knot of IBC battery can be simplified
Structure and preparation process.It is prepared in addition, structure proposed by the invention (can be no more than 300 °C) at low temperature, this will make IBC battery
Entire preparation process is more elastic.Such as: back side knot can be first prepared when preparation IBC battery in the case where not doing front protecting
Structure, etc. backside structures carry out after with dry or wet etch remove front formation diffusion layer, then prepare bilayer TiOxStructure,
This can also simplify the preparation process of IBC battery.
Detailed description of the invention
Attached drawing 1 is the double-deck TiO mentioned by the present inventionxStructural schematic diagram.In figure, 1 is IBC battery, and it comprises batteries
The device architecture at the back side；2 be passivation TiOxLayer provides well passivated effect to the battery front side silicon materials surface IBC；3 be n-
TiOxLayer is n-type doping and has certain doping concentration.
Specific embodiment
The present invention will be described further by following embodiment.
Embodiment 1.
(1) the IBC battery front side that backside structure has prepared cleaned, etched, so that fresh silicon face is exposed
Out.
(2) one layer of amorphous TiO is deposited on the exposed silicon face of IBC battery front sidexLayer, the TiOxLayer is silicon face
Good passivation is provided.It is passivated TiOxThe preparation of layer uses atom layer deposition process, and thickness control is in 1nm.
(3) in amorphous passivation TiOxOne layer of crystalline state TiO is deposited on layerxLayer, doping type are N-shaped.The N-shaped
TiOxThe preparation of layer uses sputtering technology, and with a thickness of 100nm, doping concentration is controlled 1 × 1018cm-3。
Embodiment 2.
(1) the IBC battery front side that backside structure has prepared cleaned, etched, so that fresh silicon face is exposed
Out.
(2) one layer of amorphous TiO is deposited on the exposed silicon face of IBC battery front sidexLayer, the TiOxLayer is silicon face
Good passivation is provided.It is passivated TiOxThe preparation of layer uses chemical vapor deposition process, and thickness control is in 3nm.
(3) in amorphous passivation TiOxOne layer of crystalline state TiO is deposited on layerxLayer, doping type are N-shaped.The N-shaped
TiOxThe preparation of layer uses evaporation technology, and with a thickness of 50nm, doping concentration is controlled 5 × 1017cm-3。
Claims (4)
1. a kind of double-deck TiO applied to rear-face contact solar cellxStructure, it is characterized in that overleaf contact solar cell front
Silicon materials surface forms one layer of passivation TiOxLayer, in passivation TiOxRe-formed on layer one layer of n-type doping and doping concentration be 1 ×
1016-1×1020cm-3N-TiOxLayer；Form rear-face contact solar cell front silicon face-passivation TiOxLayer-n-TiOxLayer knot
Structure, the structure form the built in field that direction is directed toward inside solar cell.
2. a kind of double-deck TiO applied to rear-face contact solar cell according to claim 1xStructure, it is characterized in that described
The preparation process of structure be: rear-face contact solar cell front is handled first so that fresh silicon face exposes
Come；One layer of passivation TiO is prepared using atom layer deposition processxLayer；In passivation TiOxIt is deposited on layer using evaporation or sputtering technology
The TiO of one layer of n-type dopingxLayer；Control outer layer TiOxThickness forms antireflection layer.
3. a kind of double-deck TiO applied to rear-face contact solar cell according to claim 1xStructure, it is characterized in that described
Passivation TiOxLayer is amorphous semiconductor, and conduction type is Intrinsical or weak N-shaped.
4. a kind of double-deck TiO applied to rear-face contact solar cell according to claim 1xStructure, it is characterized in that described
n-TiOxLayer is crystalline state semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710216880.XA CN106981523B (en) | 2017-04-05 | 2017-04-05 | A kind of double-deck TiO applied to rear-face contact solar cellxStructure |
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| CN201710216880.XA CN106981523B (en) | 2017-04-05 | 2017-04-05 | A kind of double-deck TiO applied to rear-face contact solar cellxStructure |
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| CN106981523A CN106981523A (en) | 2017-07-25 |
| CN106981523B true CN106981523B (en) | 2019-05-24 |
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| CN115148838B (en) * | 2020-09-15 | 2023-07-18 | 泰州隆基乐叶光伏科技有限公司 | Solar cell, production method and photovoltaic module |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009524916A (en) * | 2006-01-26 | 2009-07-02 | アライズ テクノロジーズ コーポレーション | Solar cell |
| CN106449845A (en) * | 2016-09-14 | 2017-02-22 | 南昌大学 | Si/TiOx heterojunction-based double-sided crystalline silicon solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5213188B2 (en) * | 2010-04-27 | 2013-06-19 | シャープ株式会社 | Back electrode type solar cell and method of manufacturing back electrode type solar cell |
| KR101627204B1 (en) * | 2013-11-28 | 2016-06-03 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
| CN203839392U (en) * | 2014-05-16 | 2014-09-17 | 北京汉能创昱科技有限公司 | Solar cell |
| CN105914249B (en) * | 2016-06-27 | 2018-07-17 | 泰州隆基乐叶光伏科技有限公司 | All back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009524916A (en) * | 2006-01-26 | 2009-07-02 | アライズ テクノロジーズ コーポレーション | Solar cell |
| CN106449845A (en) * | 2016-09-14 | 2017-02-22 | 南昌大学 | Si/TiOx heterojunction-based double-sided crystalline silicon solar cell |
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