CN106944381A - Wafer cleaning device and its cleaning method - Google Patents
Wafer cleaning device and its cleaning method Download PDFInfo
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- CN106944381A CN106944381A CN201610006718.0A CN201610006718A CN106944381A CN 106944381 A CN106944381 A CN 106944381A CN 201610006718 A CN201610006718 A CN 201610006718A CN 106944381 A CN106944381 A CN 106944381A
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- wafer
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- cleaned
- brush
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- 238000004140 cleaning Methods 0.000 title claims abstract description 282
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 13
- 239000007921 spray Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 127
- 238000005516 engineering process Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007521 mechanical polishing technique Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/20—Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a kind of wafer cleaning device and its cleaning method, and the wafer cleaning device at least includes：First cleaning brush and the second cleaning brush；First cleaning brush is suitable to scrub the wafer to be cleaned；Second cleaning brush be arranged in parallel with first cleaning brush, suitable for being cleaned to first cleaning brush.By setting the first cleaning brush and the second cleaning brush simultaneously in the wafer cleaning device, after first cleaning brush is finished to a piece of wafer scrub to be cleaned, second cleaning brush is cleaned to first cleaning brush, in the case where not influenceing to wafer scrub process, first cleaning brush can be scrubbed, the dirt for sticking to the first cleaning brush surface can be removed in time, it is to avoid treated cleaning wafer during cleaning wafer scrub is treated and caused scratch；So as to ensure that the quality of scrub, operating efficiency is improved, the service life of first cleaning brush is extended again, production cost has been saved.
Description
Technical field
The present invention relates to semiconductor Preparation equipment field, more particularly to a kind of wafer cleaning device and its cleaning method.
Background technology
In semiconductor fabrication process, with the continuous upgrading of process technique, the requirement more and more higher to flatness of wafer surface.And chemically-mechanicapolish polish (Chemical Mechanical Polishing, CMP) technology is the technology of mechanical skiving and chemical attack combination, chemical Mechanical Polishing Technique is acted on by the chemical attack of the abrasive action and slurry of ultra micron, bright and clean flat plane is formed on the dielectric surface being ground, it is possible to achieve the global planarization of crystal column surface.Chemical Mechanical Polishing Technique is the product that integrated circuit develops to granular, multiple stratification, slimming, flatening process, the mainstream technology of semiconductor manufacturing industry is had become, is also to improve production efficiency, reduction production cost and the indispensable technology of substrate overall situationization planarization.
But, in follow-up processing technology, because preceding road grinding step can bring smear material to crystal column surface, these smear materials include abrasive grain such as ceria, aluminum oxide, the silica dioxide granule of glue and added to the surfactant in abrasive material, aggressive agent and other additive residues.Cause these particles embedded crystal column surface under mechanical pressure in chemical mechanical planarization process, in order to avoid reducing the reliability of device and introducing defect to device, therefore the cleaning of subsequent handling becomes more important and strict.
As shown in Figures 1 and 2, from Fig. 1 and Fig. 2, the cleaning device of wafer includes wafer cleaning device of the prior art after chemically-mechanicapolish polishing in the prior art：Rinse bath 12, cleaning brush 10, jet pipe 11 and wafer tumbler 13, after polishing process terminates, wafer 14 to be cleaned is fixed on the wafer tumbler 13, the cleaning brush 10 presses close to the wafer to be cleaned 14, the front and the back side of the wafer to be cleaned 14 are scrubbed, meanwhile, the jet pipe 11 sprays cleaning fluid or deionized water to the surface of wafer 14 to be cleaned, the impurity on the surface of wafer to be cleaned 14 is removed, so as to reach the purpose of thoroughly cleaning.
However, in the prior art, problems with occurs after the wafer cleaning device long-time use：For a long time using the surface meeting bind dirt of the cleaning brush 10, for example including organic residue, surface particles, dirt is rested on the cleaning brush 10, in the case of continuous work, the cleaning brush 10 cannot be cleaned timely, scratch will be formed on the surface of the wafer 14 to be cleaned, influence the quality of the wafer 14 to be cleaned.Existing solution is after the cleaning of wafer 14 some cycles to be cleaned using 10 pairs of the cleaning brush, to stop cleaning, change the cleaning brush 10, however, this inherently influences operating efficiency, cause the waste of manpower financial capacity.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of wafer cleaning device and its cleaning method, it cannot be cleared up in time for solving cleaning brush in the prior art, easily in crystal column surface to be cleaned formation scratch, and then the problem of influence wafer quality, and regularly replace inefficiency, the problem of causing the waste of manpower financial capacity caused by cleaning brush.
In order to achieve the above objects and other related objects, the present invention provides a kind of clear device of wafer, and the crystal column surface to be cleaned after CMP process is carried out for cleaning, and the wafer cleaning device to be cleaned at least includes：First cleaning brush and the second cleaning brush；
First cleaning brush is suitable to scrub the wafer to be cleaned；
Second cleaning brush be arranged in parallel with first cleaning brush, suitable for being cleaned to first cleaning brush.
It is used as a kind of preferred scheme of the wafer cleaning device of the present invention, second cleaning brush is located at range of first cleaning brush away from the wafer to be cleaned, when first cleaning brush is moved to apart from the farthest of the wafer to be cleaned, the surface of first cleaning brush is in contact with the surface of second cleaning brush.
As a kind of preferred scheme of the wafer cleaning device of the present invention, first cleaning brush and second cleaning brush include brush axle and are sheathed on the peripheral brush pot of the brush axle；The outer surface of the brush pot is provided with bump structure.
It is used as a kind of preferred scheme of the wafer cleaning device of the present invention, the length of the brush axle is more than the length of brush pot, the length of the first cleaning brush brush pot is more than brilliant diameter of a circle to be cleaned, and the length of the second cleaning brush brush pot is more than or equal to the length of the first cleaning brush brush pot.
As a kind of preferred scheme of the wafer cleaning device of the present invention, the quantity of first cleaning brush is two, and described two first cleaning brush are located at the both sides of the wafer to be cleaned respectively.
As a kind of preferred scheme of the wafer cleaning device of the present invention, the quantity of second cleaning brush is one, and second cleaning brush is located at close to the side of the wafer frontside to be cleaned.
It is used as a kind of preferred scheme of the wafer cleaning device of the present invention, the wafer cleaning device also includes two the first sparge pipes, two first sparge pipes are respectively arranged on wafer positive and negative oblique upper to be cleaned, and each first sparge pipe is provided with least one first jet.
As a kind of preferred scheme of the wafer cleaning device of the present invention, the wafer cleaning device also includes the second sparge pipe, and second sparge pipe is parallel with second cleaning brush, and second sparge pipe is provided with least one second nozzle.
As a kind of preferred scheme of the wafer cleaning device of the present invention, the wafer cleaning device also includes：
Rinse bath；
Wafer tumbler, in the rinse bath, suitable for fixing and driving the wafer to be cleaned to rotate；
Drive device, suitable for driving first cleaning brush, second cleaning brush and the wafer tumbler to rotate.
The present invention also provides a kind of cleaning method of wafer cleaning device, and the cleaning method of the wafer cleaning device at least comprises the following steps：
Wafer to be cleaned is placed on wafer tumbler；
Wafer tumbler drives the wafer to be cleaned to rotate, and the first sparge pipe positioned at the wafer positive and negative oblique upper to be cleaned sprays cleaning fluid or deionized water to the surface of the wafer to be cleaned；
First cleaning brush rotates and compresses the surface of the wafer to be cleaned and the surface of the wafer to be cleaned is scrubbed；
After the completion of being scrubbed to the wafer to be cleaned, first cleaning brush leaves the crystal column surface to be cleaned, and is in contact with one second cleaning brush；
Second cleaning brush is reversely rotated relative to first cleaning brush, and first cleaning brush is cleaned.
It is used as a kind of preferred scheme of the cleaning method of the wafer cleaning device of the present invention, while second cleaning brush is cleaned to first cleaning brush, the second sparge pipe below second cleaning brush sprays deionized water to the surface of second cleaning brush to be rinsed second cleaning brush.
As described above, the wafer cleaning device and its cleaning method of the present invention, have the advantages that：First cleaning brush and the second cleaning brush are set simultaneously in the wafer cleaning device, after first cleaning brush is finished to a piece of wafer scrub to be cleaned, second cleaning brush is cleaned to first cleaning brush, in the case where not influenceing to wafer scrub process, first cleaning brush can be scrubbed, the dirt for sticking to the first cleaning brush surface can be removed in time, it is to avoid treated cleaning wafer during cleaning wafer scrub is treated and caused scratch；So as to ensure that the quality of scrub, operating efficiency is improved, the service life of first cleaning brush is extended again, production cost has been saved.
Brief description of the drawings
Fig. 1 is shown as the schematic perspective view of wafer cleaning device of the prior art.
Fig. 2 is shown as the front view of wafer cleaning device of the prior art.
Fig. 3 is shown as the structural representation that the first cleaning brush is scrubbed to wafer in the wafer cleaning device of the present invention.
Fig. 4 is shown as the structural representation that the second cleaning brush is cleaned to the first cleaning brush in the wafer cleaning device of the present invention.
Fig. 5 is shown as Fig. 4 right view.
Fig. 6 is shown as the flow chart of the cleaning method of the wafer cleaning device of the present invention.
Component label instructions
10 cleaning brush
101 bump structures
11 jet pipes
12 rinse baths
13 wafer tumblers
14 wafers to be cleaned
20 first cleaning brush
21 second cleaning brush
22 bump structures
23 brush axles
24 brush pots
25 first sparge pipes
26 second sparge pipes
27 rinse baths
28 wafer tumblers
29 wafers to be cleaned
210 drive devices
Embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be understood other advantages and effect of the present invention easily as the content disclosed by this specification.
Fig. 3 is referred to Fig. 6.Notice, structure, ratio, size depicted in this specification institute accompanying drawings etc., only to coordinate the content disclosed in specification, so that those skilled in the art is understood with reading, it is not limited to enforceable qualifications of the invention, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size, in the case where not influenceing effect of the invention that can be generated and the purpose that can reach, all should still it fall in the range of disclosed technology contents are obtained and can covered.Simultaneously, the term of cited such as " on ", " under " in this specification, "left", "right", " centre " and " one ", it is merely convenient to understanding for narration, and be not used to limit enforceable scope of the invention, its relativeness is altered or modified, under without essence change technology contents, when being also considered as enforceable category of the invention.
Fig. 3 to Fig. 5 is referred to, the present invention provides a kind of wafer cleaning device, the surface of wafer to be cleaned 29 after CMP process is carried out for cleaning, the wafer cleaning device at least includes：First cleaning brush 20 and the second cleaning brush 21；
First cleaning brush 20 is suitable to scrub the wafer 29 to be cleaned；
Second cleaning brush 21 be arranged in parallel with first cleaning brush 20, suitable for being cleaned to first cleaning brush 20.
As an example, first cleaning brush 20 can be moved left and right, when needing to scrub the wafer 29 to be cleaned, the surface that first cleaning brush 20 is moved to the wafer to be cleaned 29 is scrubbed to it, as shown in Figure 3；Wafer 29 to be cleaned this described is scrubbed after finishing, first cleaning brush 20 is in contact away from the wafer 29 to be cleaned, and with second cleaning brush 21, as shown in Figure 4.
As an example, second cleaning brush 21 is located at the side of the side-to-side movement track of the first cleaning brush 20, with while 20 side-to-side movement of the first cleaning brush is not hindered, ensure that second cleaning brush 21 can be in contact with first cleaning brush 20, and then first cleaning brush 20 is cleaned.Preferably, in the present embodiment, second cleaning brush 21 is located at range of first cleaning brush 20 away from the wafer 29 to be cleaned, when i.e. described first cleaning brush 20 is moved to apart from the farthest of the wafer 29 to be cleaned, the surface of first cleaning brush 20 is in contact with the surface of second cleaning brush 21.
As an example, first cleaning brush 20 and second cleaning brush 21 include brush axle 23 and are sheathed on the peripheral brush pot 24 of the brush axle 23；The outer surface of the brush pot 24 is provided with bump structure 22.The bump structure 22 is set on the surface of the brush pot 24, the cleansing power of first cleaning brush 20 and second cleaning brush 21 can be strengthened.
As an example, the length of the brush axle 23 is more than the length of brush pot 24, the length of the brush pot 24 of first cleaning brush 20 is more than the diameter of wafer 29 to be cleaned, can scrubbed with the whole surface for ensuring 20 pairs of first cleaning brush wafer 29 to be cleaned；The length of the brush pot 24 of second cleaning brush 21 is more than or equal to the length of the brush pot 24 of first cleaning brush 20, to ensure that second cleaning brush 21 be able to can be cleaned to the whole surface of the brush pot 24 of first cleaning brush 20；Preferably, in this implementation, the length of the brush pot 24 of second cleaning brush 21 is equal to the length of the brush pot 24 of first cleaning brush 20.In one example, as shown in figure 5, the size, shape and material of size, shape and the material of first cleaning brush 20 with second cleaning brush 21 are identical, in order to which first cleaning brush 20 and second cleaning brush 21 are installed and cleaned.
As an example, the quantity of first cleaning brush 20 is two, described two first cleaning brush 20 are located at the both sides of the positive and negative of wafer 29 to be cleaned respectively, to be scrubbed respectively to the positive and negative of the wafer 29 to be cleaned.
It should be noted that the front of the wafer to be cleaned 29 refers to the one side for being formed with device architecture, the back side of the wafer 29 to be cleaned refers to the one side for being formed without device architecture.
As an example, the quantity of second cleaning brush 21 can be one, second cleaning brush 21 is located at close to the positive side of the wafer 29 to be cleaned.Certainly, the quantity of second cleaning brush 21 can also be two, and described two second cleaning brush 21 are located at the both sides of the wafer 29 to be cleaned respectively, to be cleaned respectively to described two first cleaning brush 20.
As an example, the wafer cleaning device also includes two the first sparge pipes 25, two first sparge pipes 25 are respectively arranged on the positive and negative oblique upper of wafer 29 to be cleaned, and each first sparge pipe 25 is provided with least one first jet.The direction that first sparge pipe 25 sprays liquid is directed at the wafer 29 to be cleaned, and the liquid that first sparge pipe 25 sprays can cover front and the reverse side of the wafer to be cleaned 29 comprehensively.
As an example, the wafer cleaning device also includes the second sparge pipe 26, second sparge pipe 26 is parallel with second cleaning brush 21, and second sparge pipe 26 is provided with least one second nozzle.Second sparge pipe 26 sprays the direction of liquid towards the direction of second cleaning brush 21, and the liquid that second sparge pipe 26 sprays can cover the surface of second cleaning brush 21 comprehensively.
As an example, the wafer cleaning device also includes：Rinse bath 27；Wafer tumbler 28, in the rinse bath 27, suitable for fixing and driving the wafer to be cleaned 29 to rotate；Drive device 210, suitable for driving first cleaning brush 20, second cleaning brush 21 and the wafer tumbler 28 to rotate.
As an example, the wafer tumbler 28 can fix handgrip (being preferably three) fixed described wafer 29 to be cleaned by least two as shown in Figures 3 and 4, or fix the wafer 29 to be cleaned for arc fixing axle, in cleaning process, the wafer tumbler 28 fixes the wafer to be cleaned 29, and rotated by axle of the vertical line by the center of wafer 29 to be cleaned, so that the wafer to be cleaned 29 smoothly itself rotates.
The wafer cleaning device of the present invention, by setting the first cleaning brush and the second cleaning brush simultaneously in the wafer cleaning device, after first cleaning brush is finished to a piece of wafer scrub to be cleaned, second cleaning brush is cleaned to first cleaning brush, in the case where not influenceing to wafer scrub process, first cleaning brush can be scrubbed, the dirt for sticking to the first cleaning brush surface can be removed in time, it is to avoid treated cleaning wafer during cleaning wafer scrub is treated and caused scratch；So as to ensure that the quality of scrub, operating efficiency is improved, the service life of first cleaning brush is extended again, production cost has been saved.
The present invention also provides a kind of cleaning method of wafer cleaning device, and the cleaning method of the wafer cleaning device at least comprises the following steps：
S1：Wafer to be cleaned is placed on wafer tumbler；
S2：Wafer tumbler drives the wafer to be cleaned to rotate, and the first sparge pipe positioned at the wafer positive and negative oblique upper to be cleaned sprays cleaning fluid or deionized water to the surface of the wafer to be cleaned；
S3：First cleaning brush rotates and compresses the surface of the wafer to be cleaned and the surface of the wafer to be cleaned is scrubbed, as shown in Figure 3；
S4：After the completion of being scrubbed to the wafer to be cleaned, first cleaning brush leaves the crystal column surface to be cleaned, and is in contact with one second cleaning brush；
S5：Second cleaning brush is reversely rotated relative to first cleaning brush, first cleaning brush is cleaned, as shown in Figure 4.
As an example, while second cleaning brush is cleaned to first cleaning brush, the second sparge pipe below second cleaning brush sprays deionized water to the surface of second cleaning brush to be rinsed second cleaning brush.
In summary, the present invention provides a kind of wafer cleaning device and its cleaning method, and the crystal column surface to be cleaned after CMP process is carried out for cleaning, and the wafer cleaning device includes：First cleaning brush and the second cleaning brush；First cleaning brush is suitable to scrub the wafer to be cleaned；Second cleaning brush be arranged in parallel with first cleaning brush, suitable for being cleaned to first cleaning brush.By setting the first cleaning brush and the second cleaning brush simultaneously in the wafer cleaning device, after first cleaning brush is finished to a piece of wafer scrub to be cleaned, second cleaning brush is cleaned to first cleaning brush, in the case where not influenceing to wafer scrub process, first cleaning brush can be scrubbed, the dirt for sticking to the first cleaning brush surface can be removed in time, it is to avoid treated cleaning wafer during cleaning wafer scrub is treated and caused scratch；So as to ensure that the quality of scrub, operating efficiency is improved, the service life of first cleaning brush is extended again, production cost has been saved.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.Any person skilled in the art all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Therefore, those of ordinary skill in the art, without departing from disclosed spirit and all equivalent modifications completed under technological thought or change, should be covered by the claim of the present invention such as.
Claims (11)
1. a kind of wafer cleaning device, the crystal column surface to be cleaned after CMP process is carried out for cleaning, it is characterised in that
The wafer cleaning device to be cleaned at least includes：First cleaning brush and the second cleaning brush；
First cleaning brush is suitable to scrub the wafer to be cleaned；
Second cleaning brush be arranged in parallel with first cleaning brush, suitable for being cleaned to first cleaning brush.
2. wafer cleaning device according to claim 1, it is characterised in that：Second cleaning brush is located at first cleaning brush
At range away from the wafer to be cleaned, first cleaning brush moves to the farthest apart from the wafer to be cleaned
When, the surface of first cleaning brush is in contact with the surface of second cleaning brush.
3. wafer cleaning device according to claim 1, it is characterised in that：First cleaning brush and second cleaning brush are equal
Including brush axle and it is sheathed on the peripheral brush pot of the brush axle；The outer surface of the brush pot is provided with bump structure.
4. wafer cleaning device according to claim 3, it is characterised in that：The length of the brush axle is more than the length of brush pot, institute
The length for stating the first cleaning brush brush pot is more than brilliant diameter of a circle to be cleaned, and the length of the second cleaning brush brush pot is more than or equal to
The length of the first cleaning brush brush pot.
5. wafer cleaning device according to claim 1, it is characterised in that：The quantity of first cleaning brush is two, described
Two the first cleaning brush are located at the both sides of the wafer to be cleaned respectively.
6. wafer cleaning device according to claim 1, it is characterised in that：The quantity of second cleaning brush is one, described
Second cleaning brush is located at close to the side of the wafer frontside to be cleaned.
7. wafer cleaning device according to claim 1, it is characterised in that：The wafer cleaning device also includes two first sprays
Liquid pipe, two first sparge pipes are respectively arranged on the wafer positive and negative oblique upper to be cleaned, and each first spray
Liquid pipe is provided with least one first jet.
8. wafer cleaning device according to claim 1, it is characterised in that：The wafer cleaning device also includes the second sparge pipe,
Second sparge pipe is parallel with second cleaning brush, and second sparge pipe is provided with least one second nozzle.
9. wafer cleaning device according to any one of claim 1 to 8, it is characterised in that the wafer cleaning device is also wrapped
Include：
Rinse bath；
Wafer tumbler, in the rinse bath, suitable for fixing and driving the wafer to be cleaned to rotate；
Drive device, suitable for driving first cleaning brush, second cleaning brush and the wafer tumbler to rotate.
10. a kind of cleaning method of wafer cleaning device, it is characterised in that comprise the following steps：
Wafer to be cleaned is placed on wafer tumbler；
Wafer tumbler drives the wafer to be cleaned to rotate, and first positioned at the wafer positive and negative oblique upper to be cleaned
Sparge pipe sprays cleaning fluid or deionized water to the surface of the wafer to be cleaned；
First cleaning brush rotates and compresses the surface of the wafer to be cleaned and the surface of the wafer to be cleaned is scrubbed；
After the completion of being scrubbed to the wafer to be cleaned, first cleaning brush leaves the crystal column surface to be cleaned, and with one
Second cleaning brush is in contact；
Second cleaning brush is reversely rotated relative to first cleaning brush, and first cleaning brush is cleaned.
11. the cleaning method of wafer cleaning device according to claim 10, it is characterised in that：Second cleaning brush is to institute
While stating the first cleaning brush and cleaned, the second sparge pipe below second cleaning brush sprays deionized water to institute
The surface of the second cleaning brush is stated to be rinsed second cleaning brush.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610006718.0A CN106944381A (en) | 2016-01-06 | 2016-01-06 | Wafer cleaning device and its cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610006718.0A CN106944381A (en) | 2016-01-06 | 2016-01-06 | Wafer cleaning device and its cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106944381A true CN106944381A (en) | 2017-07-14 |
Family
ID=59466385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610006718.0A Pending CN106944381A (en) | 2016-01-06 | 2016-01-06 | Wafer cleaning device and its cleaning method |
Country Status (1)
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| CN108630588A (en) * | 2018-05-30 | 2018-10-09 | 睿力集成电路有限公司 | Method for cleaning wafer and system after chemical mechanical grinding |
| CN110090824A (en) * | 2018-01-30 | 2019-08-06 | 凯斯科技股份有限公司 | Brushing device |
| CN111341699A (en) * | 2020-03-09 | 2020-06-26 | 杭州众硅电子科技有限公司 | Cleaning brush precleaning system |
| CN111744836A (en) * | 2019-03-29 | 2020-10-09 | 中芯集成电路（宁波）有限公司 | Wafer cleaning device and control system |
| CN112233971A (en) * | 2020-12-15 | 2021-01-15 | 华海清科(北京)科技有限公司 | Wafer cleaning method and wafer cleaning device |
| CN112371612A (en) * | 2020-10-13 | 2021-02-19 | 江苏亚电科技有限公司 | Basket-free wafer cleaning method |
| CN112885741A (en) * | 2021-01-08 | 2021-06-01 | 长江存储科技有限责任公司 | Wafer cleaning device and wafer cleaning method |
| CN113118100A (en) * | 2019-12-31 | 2021-07-16 | 清华大学 | Wafer cleaning device and cleaning method |
| CN113967888A (en) * | 2020-07-23 | 2022-01-25 | 长鑫存储技术有限公司 | Sponge brush replacing tool and mounting method and semiconductor chemical mechanical polishing equipment |
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| CN111744836A (en) * | 2019-03-29 | 2020-10-09 | 中芯集成电路（宁波）有限公司 | Wafer cleaning device and control system |
| CN113118100A (en) * | 2019-12-31 | 2021-07-16 | 清华大学 | Wafer cleaning device and cleaning method |
| CN113118100B (en) * | 2019-12-31 | 2022-09-06 | 清华大学 | Wafer cleaning device and cleaning method |
| CN111341699A (en) * | 2020-03-09 | 2020-06-26 | 杭州众硅电子科技有限公司 | Cleaning brush precleaning system |
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| CN113967888A (en) * | 2020-07-23 | 2022-01-25 | 长鑫存储技术有限公司 | Sponge brush replacing tool and mounting method and semiconductor chemical mechanical polishing equipment |
| CN113967888B (en) * | 2020-07-23 | 2022-06-24 | 长鑫存储技术有限公司 | Sponge brush replacing tool and mounting method and semiconductor chemical mechanical polishing equipment |
| CN112371612A (en) * | 2020-10-13 | 2021-02-19 | 江苏亚电科技有限公司 | Basket-free wafer cleaning method |
| CN112233971A (en) * | 2020-12-15 | 2021-01-15 | 华海清科(北京)科技有限公司 | Wafer cleaning method and wafer cleaning device |
| CN112885741A (en) * | 2021-01-08 | 2021-06-01 | 长江存储科技有限责任公司 | Wafer cleaning device and wafer cleaning method |
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Application publication date: 20170714 |