CN106842105B - A method of reducing electric energy metering error - Google Patents
A method of reducing electric energy metering error Download PDFInfo
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- CN106842105B CN106842105B CN201710079064.9A CN201710079064A CN106842105B CN 106842105 B CN106842105 B CN 106842105B CN 201710079064 A CN201710079064 A CN 201710079064A CN 106842105 B CN106842105 B CN 106842105B
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Abstract
A method of reducing electric energy metering error, the current range for measuring product is divided at least three working regions, in calibration successively to A, B, C three-phase is calibrated respectively in each working region, and the electric energy gain compensation value of each working region obtained after calibration is stored in metering chip and memory respectively, when compensating, first determine whether which working region input current is in, then the electric energy gain compensation value for reading corresponding region compensates, the ammeter for overcoming the metering chip of only one electric energy gain register can only carry out compensation for calibrating errors based on a current point, existing high current input and low current error originated from input be not up to standard, the limited problem of compensation ability, realize the compensation of wider range.
Description
Technical field
The invention belongs to electrical energy measurement product technical field more particularly to a kind of sides that can reduce electric energy metering error
Method.
Background technique
With the continuous propulsion of national smart grid, intelligent electric meter is gradually popularized, and is proposed more to the measuring accuracy of ammeter
High requirement.Metering chip in ammeter is for realizing electrical energy measurement.It is well known that metering product requires school before factory
Standard, by being compared and then being calibrated with standard source, universal calibration process is successively right as shown in Figure 1, when calibration at present
A, B, C of ammeter respectively mutually carry out electric energy gain calibration.The three-phase electric energy of metering chip used by part ammeter producer increases at present
Beneficial register only one, such as model IDT90E36 three-phase electrical energy computation chip be atmel corp a metering core
Piece is widely used since it has the characteristics that high-precision, high-performance, wide dynamic range by most electric energy meter manufacturing firms.Application
People's discovery, using the ammeter of this metering chip when carrying out electric energy gain calibration, since only one electric energy of metering chip increases
Beneficial register can only calibrate a current point, by taking PF=0.5L as an example, when calibrating the electric energy gain of A phase, and only calibration one
Current point, such as Ib point, B, C phase also only calibrate Ib point, and electric energy gain when using electric current being Ib is as the benefit of electric current gamut scope
It repays, compensation ability is limited, just will appear error problem not up to standard when low current and high current input, is not able to satisfy internal control mark
Standard, error phenomenon not up to standard is more obvious especially under high and low temperature environment and EMS environment.
For electrical energy measurement, the accuracy of metering is related to the quality and the market competitiveness of entire product, so such as
What improves such metering chip in low current and high current error problem not up to standard, and the measurement error of product is made to can satisfy internal control
The requirement of index is current urgent problem.
Summary of the invention
The object of the present invention is to provide the methods that can reduce electric energy metering error, can reduce high current input and small electricity
Error when stream input.
To achieve the goals above, the present invention takes following technical solution:
A method of reducing electric energy metering error, comprising the following steps:
S100, subregion electric energy gain calibration step；Current range is divided at least three working regions, successively to A, B,
C three-phase is calibrated respectively in each working region, and steps are as follows: metering product is attached on tester, since A phase,
S101, the output parameter that tester standard source is arranged: each phase voltage is equal to voltage rating, and phase current to be calibrated takes
Current value within the scope of first working region, another biphase current are zero；
S102, the first error value μ for reading tester output1, by μ1Multiply after chip coefficient, is converted into two bytes
Hexadecimal number, and calculate CRC check result；
S102, judge first error value μ1Whether be greater than zero, if it is greater than zero, then using the hexadecimal number after conversion as
Electric energy gain compensation value is written in the electric energy gain register of memory and metering chip, and CRC check is written in memory
As a result；If it is less than zero, 1 is set by the highest order of hexadecimal number, memory and meter is written as electric energy gain compensation value
In the electric energy gain register for measuring chip, and CRC check result is written in memory；
The calibration of S104, the first working region terminate, and the calibration of the second working region are carried out, by the standard source of tester
The phase current to be calibrated of output value, another biphase current within the scope of the second working region are zero；
S105, the second error amount μ for reading tester output2, by μ2Multiply after chip coefficient, is converted into two bytes
Hexadecimal number, and calculate CRC check result；
S106, judge the second error amount μ2Whether be greater than zero, if it is greater than zero, then using the hexadecimal number after conversion as
Electric energy gain compensation value is written in the electric energy gain register of memory and metering chip, and CRC check is written in memory
As a result；If it is less than zero, 1 is set by the highest order of hexadecimal number, memory and meter is written as electric energy gain compensation value
In the electric energy gain register for measuring chip, and CRC check result is written in memory；
The calibration of S107, the second working region terminate, and the calibration of third working region are carried out, by the standard source of tester
The phase current to be calibrated of output value, another biphase current within the scope of third working region are zero；
S108, the third error amount μ for reading tester output3, by μ3Multiply after chip coefficient, is converted into two bytes
Hexadecimal number, and calculate CRC check result；
S109, judge third error amount μ3Whether be greater than zero, if it is greater than zero, then using the hexadecimal number after conversion as
Electric energy gain compensation value is written in the electric energy gain register of memory and metering chip, and CRC check is written in memory
As a result；If it is less than zero, 1 is set by the highest order of hexadecimal number, memory and meter is written as electric energy gain compensation value
In the electric energy gain register for measuring chip, and CRC check result is written in memory；
S110, and so on, after a phase all working region is all calibrated, return step S101, to same power
Other phases of factor carry out subregion calibration, and each the step of mutually calibrating is identical, until executing electric energy after all phases are all calibrated
Gain compensation step；
S200, electric energy gain compensation step successively carry out gain compensation to A, B, C three-phase, and steps are as follows: since A phase,
S201, phase electric energy gain compensation value to be compensated is read from the electric energy gain compensation register of metering chip, and assigned
It is worth to OldAph；
Which working region the electric current that S202, judgement are currently input to metering product is in；
S203, the electric energy gain compensation value that opposite areas inside operating to be compensated is read from memory, and CRC check is carried out,
If CRC check pair, S205 is thened follow the steps, it is no to then follow the steps S204；
S204, the Backup Data of opposite areas inside operating to be compensated will be read from memory as corresponding work to be compensated
Then the electric energy gain compensation value in region executes step S205；
S205, the electric energy gain compensation value of the opposite areas inside operating to be compensated read from memory is assigned to
NewAph, and execute step S206；
S206, judge whether OldAph is equal to NewAph, if unequal, execute step after enabling OldAph=NewAph
S207, if equal, directly execution step S207；
S207, increase the value of OldAph as the phase electric energy to be compensated of final electric energy gain compensation value deposit metering chip
In beneficial offset registers, gain compensation is carried out to metering product with the value, is terminated；
After phase compensation, return step S201 carries out electric energy gain compensation to other phases of same power factor,
Until all phases are all compensated and finished, each phase electric energy gain compensation step is identical.
More specifically, current range is divided into three working regions: the first working region is Imin~C_PhcabCurL,
Second working region is C_PhcabCurL~C_PhcabCurH, and third working region is C_PhcabCurH~Imax, wherein
Imin is the starting current for measuring product, and Imax is the maximum operating currenbt for measuring product, and C_PhcabCurL is the first segmentation
Point, C_PhcabCurH are the second cut-point, the first cut-point C_PhcabCurL be located at starting current and groundwork electric current it
Between, the second cut-point C_PhcabCurH is between groundwork electric current and maximum operating currenbt.
More specifically, Imin 0.001Ib, the groundwork electric current for measuring product is Ib.
More specifically, C_PhcabCurL 25%Ib, C_PhcabCurH 300%Ib.
More specifically, the phase current values to be calibrated in step S101 take 10%Ib.
More specifically, the phase current to be calibrated in step S104 is the groundwork electric current Ib for measuring product.
More specifically, the phase current to be calibrated in step S107 is Imax.
More specifically, it is double standby that data are carried out when step S102, in S106, S109 by electric energy gain compensation value write-in memory
Part.
More specifically, the step of S204 are as follows: the first backup number of opposite areas inside operating to be compensated will be read from memory
According to the electric energy gain compensation value as opposite areas inside operating to be compensated, and CRC check is carried out again, if CRC check pair,
Step S205 is executed, is used as if reading the second Backup Data to be compensated with respect to areas inside operating from memory not to if wait mend
The electric energy gain compensation value for repaying opposite areas inside operating, then executes step S205.
More specifically, the first cut-point C_PhcabCurL is less than the second cut-point C_PhcabCurH.
From the above technical scheme, the present invention is in order to reduce the existing calibration in full current margin of current ammeter
Current work region is divided into three regions, is calibrated respectively, by the different operating region of acquisition, i.e., by error in calibration
The offset of low current working region, the working region Ib and high current working region is firstly placed in memory (EEPROM), is mended
First judge which region current flow is in when repaying, then the offset of areas inside operating will be read out in EEPROM, is stored in
In the register of the every phase of metering chip, to achieve the purpose that wider range compensates, it is particularly suitable for only one electric energy gain
The metering chip of register.
Detailed description of the invention
Fig. 1 is the calibration flow chart of existing ammeter；
Fig. 2 is the metering chip of ammeter of the present invention and the block diagram of microprocessor and EEPROM；
Fig. 3 is the flow chart of electric energy gain calibration step of the present invention；
Fig. 4 is the flow chart of electric energy gain compensation step of the present invention；
Fig. 5 is the storage address list of the electric energy gain compensation value of memory of the embodiment of the present invention.
A specific embodiment of the invention is described in more detail below in conjunction with attached drawing.
Specific embodiment
As shown in Fig. 2, metering chip 1 of the invention is connected with microprocessor 2, microprocessor 2 and memory 3 (EEPROM)
It is connected, power module 4 is that metering chip 1, microprocessor 2 and memory 3 are powered.A, B, C of metering chip used in the present invention
The electric energy gain register of three-phase only one, in order to realize that the Accuracy Error in electric current gamut scope compensates, the application exists
Memory space for storing the electric energy gain compensation value in different operating region is set in memory, during calibration, every phase electricity
The electric energy gain compensation value in different operating region is flowed to store in memory.Further, due to the benefit of each working region
Repaying parameter is important parameter, and the present invention can do two Backup Datas simultaneously in EEPROM, and read and write process and require the school CRC
It tests.
In order to overcome metering chip, the especially metering chip of only one electric energy gain register, existing low current
The current range for measuring product is divided into multiple working regions by the problem not up to standard with high current error, the present invention, is being calibrated
And when compensation, by judge present input current be in which working region, calibrate according to different working regions and
Compensation.
The current range (from starting current to maximum operating currenbt) of the present embodiment is divided into following region: the first working region
(low current working region): Imin~C_PhcabCurL, the second working region (working region Ib): C_PhcabCurL~C_
PhcabCurH and third working region (high current working region): C_PhcabCurH~Imax；Wherein, Ib is metering product
Groundwork electric current, Imin are the starting current for measuring product, and the Imin of the present embodiment is 0.001Ib, and Imax is metering product
Maximum operating currenbt, C_PhcabCurL be the first cut-point, C_PhcabCurH be the second cut-point, the first cut-point C_
PhcabCurL is less than the second cut-point C_PhcabCurH.Further, the first cut-point C_PhcabCurL is located at starting current
Between groundwork electric current, preferred C_PhcabCurL is 25%Ib.Second cut-point C_PhcabCurH is located at basic work
Make between electric current and maximum operating currenbt, it is preferred that C_PhcabCurH 300%Ib.
The method of the present invention is described in detail combined with specific embodiments below, the step of the method for the present invention is as follows:
S100, subregion electric energy gain calibration step；Current range is divided into three working regions in the present embodiment, but
Three or more working regions can be divided into according to range demand, when carrying out electric energy gain calibration, successively to A, B, C three-phase every
A working region is calibrated respectively, calibration steps process as shown in figure 3, by metering product be attached on tester, opened from A phase
Beginning successively calibrate electric energy gain to A, B, C three-phase, is illustrated by taking power factor PF=0.5L as an example below,
S101, the output parameter that tester standard source is arranged: each phase voltage is equal to voltage rating Un, when being calibrated to A phase,
A phase is phase to be calibrated, and so on, corresponding when calibrating to B, C phase, B or C phase is phase to be calibrated, and A phase current takes
Current value within the scope of one working region, B, C phase current are zero, frequency 50Hz, and the present embodiment carries out the first working region school
On time, A phase current values take 10%Ib；
S102, the first error value μ for reading tester output1, by μ1Multiply in chip coefficient, and is converted into two bytes
Hexadecimal number, the chip coefficient of each chip is different, the present embodiment by taking IDT90E36 chip as an example, IDT90E36 chip
Chip coefficient is 3763.739, i.e. μ1× 3763.739, and calculate CRC check result；Calculating CRC check result of the invention
Method be data accumulation that will be sent out and then take the remainder divided by 256 that obtained remainder is CRC check result；Calculate the school CRC
Test result purpose be written data and read data when verified, thus guarantee write into EEPROM data and from
The data that EEPROM is read are consistent；Sent out data of the invention, which refer to, is written to storage for the data of two bytes using communication protocol
Frame data when device EEPROM, this frame data include leading character, opening code, address code, control code, data length, mark
Know code, password, operator's code, data, check code, termination character etc., sent out data are according to the communication protocol of each producer
It is different and different；
S102, judge first error value μ1Whether be greater than zero, if it is greater than zero, then using the hexadecimal number after conversion as
Electric energy gain compensation value is written in the A phase electric energy gain register of memory and metering chip, and the school CRC is written in memory
Test result；If it is less than zero, set 1 for the highest order of hexadecimal number, as electric energy gain compensation value write-in memory and
In the A phase electric energy gain register of metering chip, and CRC check result is written in memory；Further, by electric energy gain
Offset can carry out data double copies when memory is written, as shown in Figure 5；CRC check is written in memory, it can be subsequent
When reading data, the calculated crc value of data when being written is compared with the calculated crc value of data read out, if
Two crc values are equal, can guarantee that the value read is the value of write-in；
The calibration of S104, the first working region terminate, and the calibration of the second working region are carried out, by the standard source of tester
The A phase current of output value within the scope of the second working region, B, C phase current are zero, and the present embodiment carries out the second working region
When calibration, A phase current is Ib；
S105, the second error amount μ for reading tester output2, by μ2After × 3763.739, it is converted into two bytes
Hexadecimal number, and calculate CRC check result；
S106, judge the second error amount μ2Whether be greater than zero, if it is greater than zero, then using the hexadecimal number after conversion as
Electric energy gain compensation value is written in the A phase electric energy gain register of memory and metering chip, and the school CRC is written in memory
Test result；If it is less than zero, set 1 for the highest order of hexadecimal number, as electric energy gain compensation value write-in memory and
In the A phase electric energy gain register of metering chip, and CRC check result is written in memory；Electric energy gain can equally be mended
Data double copies are carried out when repaying value write-in memory；
The calibration of S107, the second working region terminate, and the calibration of third working region are carried out, by the standard source of tester
The A phase current of output value within the scope of third working region, B, C phase current are zero, and the present embodiment carries out third working region
When calibration, A phase current is Imax；
S108, the third error amount μ for reading tester output3, by μ3After × 3763.739, it is converted into two bytes
Hexadecimal number, and calculate CRC check result；
S109, judge third error amount μ3Whether be greater than zero, if it is greater than zero, then using the hexadecimal number after conversion as
Electric energy gain compensation value is written in the A phase electric energy gain register of memory and metering chip, and the school CRC is written in memory
Test result；If it is less than zero, set 1 for the highest order of hexadecimal number, as electric energy gain compensation value write-in memory and
In the A phase electric energy gain register of metering chip, and CRC check result is written in memory；Electric energy gain can equally be mended
Data double copies are carried out when repaying value write-in memory；
S110, after A phase is calibrated, return step S101 carries out subregion school to B, C phase of same power factor
The step of standard, B, C phase are calibrated, is identical with A phase calibration steps, is only changed to B, C phase for A is corresponding, A, B, C phase are all calibrated and finished
Afterwards, electric energy gain compensation step is executed.A, B, C phase are divided as power factor PF=1.0 or other numerical value, and successively
Regional calibration, calibration steps are identical.Work range is divided into three working regions in the present embodiment, when three work of a certain phase
After the completion of region is all calibrated, the calibration of other phases is just carried out, when working region is three or more, according to abovementioned steps by three
After the completion of the calibration of working region, the calibration steps of remaining working region and as before, the i.e. calibration of some working region are walked
It is rapid equal are as follows: certain phase current of the standard source output of high-ranking officers' meter apparatus value, other phase currents within the scope of to areas inside operating are
Zero --- error amount is multiplied in chip coefficient and is converted into the hexadecimal of two bytes by the error amount for reading tester output
It counts and calculates CRC check result --- whether error in judgement value is greater than zero, be greater than zero, then make the hexadecimal number after conversion
It is written for electric energy gain compensation value in the electric energy gain register of the correspondence phase of memory and metering chip, and writes in memory
Enter CRC check result；Less than zero, then 1 is set by the highest order of hexadecimal number, is written and stores as electric energy gain compensation value
In the electric energy gain register of the correspondence phase of device and metering chip, and CRC check result is written in memory；Until a certain phase
All working region complete calibration after, then other phases are calibrated.
S200, electric energy gain compensation step successively carry out gain compensation to A, B, C three-phase, below equally with power factor
Gain compensation step is illustrated for PF=0.5L, since A phase, when compensating to A phase, A phase is phase to be compensated, with
This analogizes, corresponding when compensating to B, C phase, B or C phase is phase to be compensated,
S201, A phase electric energy gain compensation value, and assignment are read from the A phase electric energy gain compensation register of metering chip
To OldAph；
Which working region the current electric current for being input to metering product of S202, judgement is in, if in the first work
Region thens follow the steps S203, if thening follow the steps S208 in the second working region, if in third working region
Execute step S210；
S203, the electric energy gain compensation value that the first working region of A phase is read from memory, and CRC check is carried out, if
CRC check pair thens follow the steps S205, no to then follow the steps S204；Pass through CRC check, it is ensured that the reliable communication of data,
Write-in is consistent with reading, is equivalent to data encryption and decryption；
S204, the Backup Data of the first working region of A phase will be read from memory as the electric energy of the first working region of A phase
Then gain compensation value executes step S205, i.e., the first working region of A phase that the slave memory in step S205 at this time is read
Electric energy gain compensation value be the first working region of A phase Backup Data；Further, when the data for having double copies in memory
When, the step of S204 are as follows: the first Backup Data of the first working region of A phase will be read from memory as the first workspace of A phase
The electric energy gain compensation value in domain, and CRC check is carried out again, the first work of A phase read in step S205 from memory at this time
Make the electric energy gain compensation value in region and executes step if CRC check pair for the first Backup Data of the first working region of A phase
Rapid S205, if the second Backup Data not to if from memory reading the first working region of A phase as the first working region of A phase
Electric energy gain compensation value, the electric energy gain of the first working region of A phase that the slave memory in step S205 is read at this time mends
The second Backup Data that value is the first working region of A phase is repaid, step S205 is then executed；
S205, the A read from memory is assigned to NewAph with respect to the electric energy gain compensation value of areas inside operating, and
Execute step S206；
S206, judge whether OldAph is equal to NewAph, if unequal, execute step after enabling OldAph=NewAph
S207, if equal, directly execution step S207；
S207, it is mended the value of OldAph as the A phase electric energy gain of final electric energy gain compensation value deposit metering chip
It repays in register, gain compensation is carried out to metering product with the value, is terminated；
S208, the electric energy gain compensation value that the second working region of A phase is read from memory, and CRC check is carried out, if
CRC check pair thens follow the steps S205, no to then follow the steps S209；
S209, the Backup Data that the second working region of A phase is read from memory increase as the electric energy of the second working region of A phase
Then beneficial offset executes step S205；Likewise, if when having the data of double copies in memory, the step of S209 are as follows: will
Electric energy gain compensation value of the first Backup Data of the second working region of A phase as the second working region of A phase is read from memory,
And carry out CRC check again, if CRC check pair, then follow the steps S205, if not to if from memory read A phase second
Then electric energy gain compensation value of second Backup Data of working region as two working region of A phase executes step S205；
S210, the electric energy gain compensation value that A phase third working region is read from memory, and CRC check is carried out, if
CRC check pair thens follow the steps S205, no to then follow the steps S211；
S211, the Backup Data that A phase third working region is read from memory increase as the electric energy of A phase third working region
Then beneficial offset executes step S205；If have the data of double copies in memory, the step of S211 are as follows: will be from storage
Device reads electric energy gain compensation value of the first Backup Data of A phase third working region as A phase third working region, and again
It carries out CRC check and if CRC check pair thens follow the steps S205, if reading A phase third workspace from memory not to if
Then electric energy gain compensation value of second Backup Data in domain as A phase third working region executes step S205.
B, C phase electric energy gain compensation step is identical as A phase electric energy gain compensation step, no longer superfluous herein to chat.
The process of the calibration step before compensation is optimized in the present invention, by the way of subregion calibration, when compensation
It can be compensated according to the offset of corresponding current working region, reduce the error compensated in gamut scope, do not need
Increase additional hardware cost, can be realized using existing hardware plan, method flow is simple and reliable, easy to accomplish.
The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, although referring to above-described embodiment pair
The present invention is described in detail, it should be understood by a person of ordinary skill in the art that still can be to of the invention specific
Embodiment is modified or replaced equivalently, and without departing from any modification of spirit and scope of the invention or equivalent replacement,
It should all cover among scope of the presently claimed invention.
Claims (9)
1. a kind of method for reducing electric energy metering error, which comprises the following steps:
S100, subregion electric energy gain calibration step；Current range is divided at least three working regions, successively to A, B, C tri-
It is mutually calibrated respectively in each working region, steps are as follows: metering product is attached on tester, since A phase,
S101, the output parameter that tester standard source is arranged: each phase voltage is equal to voltage rating, and phase current to be calibrated takes first
Current value within the scope of working region, another biphase current are zero；
S102, the first error value μ for reading tester output1, by μ1After chip coefficient, it is converted into the ten of two bytes
Senary number, and calculate CRC check result；
S102, judge first error value μ1Whether zero is greater than, if it is greater than zero, then using the hexadecimal number after conversion as electric energy
Gain compensation value is written in the electric energy gain register of memory and metering chip, and CRC check result is written in memory；
If it is less than zero, 1 is set by the highest order of hexadecimal number, memory and metering chip is written as electric energy gain compensation value
Electric energy gain register in, and in memory be written CRC check result；
The calibration of S104, the first working region terminate, and carry out the calibration of the second working region, and the standard source of tester is exported
Phase current to be calibrated within the scope of the second working region value, another biphase current be zero；
S105, the second error amount μ for reading tester output2, by μ2After chip coefficient, it is converted into the ten of two bytes
Senary number, and calculate CRC check result；
S106, judge the second error amount μ2Whether zero is greater than, if it is greater than zero, then using the hexadecimal number after conversion as electric energy
Gain compensation value is written in the electric energy gain register of memory and metering chip, and CRC check result is written in memory；
If it is less than zero, 1 is set by the highest order of hexadecimal number, memory and metering chip is written as electric energy gain compensation value
Electric energy gain register in, and in memory be written CRC check result；
The calibration of S107, the second working region terminate, and carry out the calibration of third working region, and the standard source of tester is exported
Phase current to be calibrated within the scope of third working region value, another biphase current be zero；
S108, the third error amount μ for reading tester output3, by μ3After chip coefficient, it is converted into the ten of two bytes
Senary number, and calculate CRC check result；
S109, judge third error amount μ3Whether zero is greater than, if it is greater than zero, then using the hexadecimal number after conversion as electric energy
Gain compensation value is written in the electric energy gain register of memory and metering chip, and CRC check result is written in memory；
If it is less than zero, 1 is set by the highest order of hexadecimal number, memory and metering chip is written as electric energy gain compensation value
Electric energy gain register in, and in memory be written CRC check result；
S110, and so on, after a phase all working region is all calibrated, return step S101, to same power factor
Other phases carry out subregion calibration, each the step of mutually calibrating, is identical, until after all phases all calibrates, execution electric energy gain
Compensation process；
S200, electric energy gain compensation step successively carry out gain compensation to A, B, C three-phase, and steps are as follows: since A phase,
S201, phase electric energy gain compensation value to be compensated is read from the electric energy gain compensation register of metering chip, and be assigned to
OldAph；
Which working region the electric current that S202, judgement are currently input to metering product is in；
S203, the electric energy gain compensation value that opposite areas inside operating to be compensated is read from memory, and CRC check is carried out, if
CRC check pair thens follow the steps S205, no to then follow the steps S204；
S204, the Backup Data of opposite areas inside operating to be compensated will be read from memory as opposite areas inside operating to be compensated
Electric energy gain compensation value, then execute step S205；
S205, the electric energy gain compensation value of the opposite areas inside operating to be compensated read from memory is assigned to NewAph,
And execute step S206；
S206, judge whether OldAph is equal to NewAph, if unequal, execute step S207 after enabling OldAph=NewAph,
If equal, directly execution step S207；
S207, it is mended the value of OldAph as the phase electric energy gain to be compensated of final electric energy gain compensation value deposit metering chip
It repays in register, gain compensation is carried out to metering product with the value, is terminated；
After phase compensation, return step S201 carries out electric energy gain compensation to other phases of same power factor, until
All phases are all compensated and are finished, and each phase electric energy gain compensation step is identical；
The method that CRC check result is calculated in abovementioned steps is taken the remainder after the data accumulation that will be sent out divided by 256, and what is obtained is remaining
Number is CRC check result.
2. the method according to claim 1 for reducing electric energy metering error, it is characterised in that: current range is divided into three
Working region: the first working region is Imin~C_PhcabCurL, and the second working region is C_PhcabCurL~C_
PhcabCurH, third working region are C_PhcabCurH~Imax, wherein Imin is the starting current for measuring product, Imax
For measure product maximum operating currenbt, C_PhcabCurL be the first cut-point, C_PhcabCurH be the second cut-point, first
Between starting current and groundwork electric current, the second cut-point C_PhcabCurH is located at basic cut-point C_PhcabCurL
Between operating current and maximum operating currenbt.
3. the method according to claim 2 for reducing electric energy metering error, it is characterised in that: Imin 0.001Ib, metering
The groundwork electric current of product is Ib.
4. the method according to claim 2 for reducing electric energy metering error, it is characterised in that: C_PhcabCurL 25%
Ib, C_PhcabCurH 300%Ib.
5. it is according to claim 1 or 2 reduce electric energy metering error method, it is characterised in that: in step S101 to
Calibration phase current values take 10%Ib.
6. it is according to claim 1 or 2 reduce electric energy metering error method, it is characterised in that: in step S104 to
Calibration phase current is the groundwork electric current Ib for measuring product.
7. it is according to claim 1 or 2 reduce electric energy metering error method, it is characterised in that: in step S107 to
Calibration phase current is Imax.
8. it is according to claim 1 or 2 reduce electric energy metering error method, it is characterised in that: step S102, S106,
Data double copies are carried out when memory is written in electric energy gain compensation value in S109.
9. the method according to claim 8 for reducing electric energy metering error, it is characterised in that: the step of S204 are as follows: will be from
The first Backup Data that memory reads opposite areas inside operating to be compensated increases as the electric energy of opposite areas inside operating to be compensated
Beneficial offset, and carry out CRC check again, if CRC check pair, thens follow the steps S205, if reading not to if from memory
The electric energy gain compensation value to be compensated with respect to the second Backup Data of areas inside operating as opposite areas inside operating to be compensated is taken,
Then step S205 is executed.
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| CN108267708A (en) * | 2017-12-28 | 2018-07-10 | 宁波三星医疗电气股份有限公司 | For the quick calibration method of single-phase smart meter error self-correcting |
| CN109061543B (en) * | 2018-08-14 | 2020-12-01 | 国电南瑞科技股份有限公司 | Self-adaptive dynamically-adjusted intelligent electric energy meter metering precision calibration method |
| CN110333387B (en) * | 2019-06-13 | 2021-08-31 | 宁波三星医疗电气股份有限公司 | Electric energy metering method of electric energy meter |
| CN110400422A (en) * | 2019-06-26 | 2019-11-01 | 青岛乾程科技股份有限公司 | A kind of electric energy meter charging method |
| CN110568397B (en) * | 2019-08-12 | 2022-06-14 | 浙江恒业电子有限公司 | Electric energy meter correction method and system based on MCU software |
| CN110763890B (en) * | 2019-09-29 | 2022-09-09 | 许昌许继软件技术有限公司 | Metering device |
| CN111175575A (en) * | 2020-01-07 | 2020-05-19 | 宁波市计量测试研究院（宁波市衡器管理所、宁波新材料检验检测中心） | Method for improving power factor angle measurement precision of standard electric energy meter |
| CN113009404B (en) * | 2021-01-26 | 2023-08-11 | 江阴长仪集团有限公司 | DC even harmonic error calibration method and electric energy meter |
| CN113311377A (en) * | 2021-05-18 | 2021-08-27 | 河南许继仪表有限公司 | Current frequency compensation method and system for electric energy meter |
| CN113325359A (en) * | 2021-05-18 | 2021-08-31 | 南方电网数字电网研究院有限公司 | Electric energy meter voltage error compensation method and system |
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