CN106784211B - Epitaxial wafer of GaN-based light emitting diode and manufacturing method thereof - Google Patents
Epitaxial wafer of GaN-based light emitting diode and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses an epitaxial wafer of a GaN-based light emitting diode and a manufacturing method thereof, belonging to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a buffer layer, a nucleating layer, an undoped GaN layer, an N-type isolation layer, a stress release layer, a quantum well and a P-type GaN layer which are sequentially stacked on the substrate, wherein the doping concentration of an N-type dopant in the N-type isolation layer is smaller than that of the N-type dopant in the N-type GaN layer, and the thickness of the N-type isolation layer is smaller than that of the N-type GaN layer. According to the invention, the N-type isolation layer is formed on the N-type GaN layer, so that stress dislocation formed due to lattice mismatch and thermal mismatch can be blocked, the opening size of the V-shaped pit formed at the dislocation position is effectively limited, the opening formation of the V-shaped pit is delayed, the stress release of an epitaxial wafer is facilitated, the V-shaped pits are merged when a P-type layer is formed, a flat surface is formed at last, the crystal quality of the epitaxial wafer is greatly improved, and the reverse breakdown voltage of a chip is improved by about 50%.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to the epitaxial wafer of a kind of GaN base light emitting and its manufacture
Method.
Background technique
Application ten of the GaN material on light emitting diode (English: Light Emitting Diode, abbreviation: LED) device
Divide generally, is the hot spot that people pay close attention to all the time.The LED color manufactured using GaN is pure, brightness is high, low energy consumption, performance ratio
Traditional AlGaInP base LED or GaAlAs base LED is more superior, is widely used in numerous necks such as illumination, medical treatment, display, toy
Domain.
By comparison complete the LED of chip package at pipe aging leakage current after a certain period of time variation, it can be found that instead
The LED forced down to breakdown potential is easier to leak electricity at pipe and breakdown is failed, and it is all since LED is hit that the failure of LED is most of at present
Damage is worn, therefore breakdown reverse voltage is the important parameter for reflecting LED chip characteristic, the raising of breakdown reverse voltage is for improving
The crystal quality of LED and failure improve significant.Traditional GaN base LED is inserted into one layer before being typically employed in Quantum Well and answers
Power releasing layer improves LED failure, but effect is limited.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of epitaxial wafers of GaN base light emitting
And its manufacturing method.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of epitaxial wafer of GaN base light emitting, the epitaxial wafer includes lining
Bottom and stack gradually buffer layer, nucleating layer, layer of undoped gan, N-type GaN layer, stress release layer, amount over the substrate
Sub- trap, p-type GaN layer, the epitaxial wafer further include the N-type isolation being layered between the N-type GaN layer and the stress release layer
Layer, the doping concentration of N type dopant is less than the doping concentration of N type dopant in the N-type GaN layer in the N-type separation layer, and
The thickness of the N-type separation layer is less than the thickness of the N-type GaN layer.
Optionally, the doping concentration of N type dopant is N type dopant in the N-type GaN layer in the N-type separation layer
The 1/60~1/25 of doping concentration.
Optionally, the 1/25~1/6 of the thickness with a thickness of the N-type GaN layer of the N-type separation layer.
Optionally, the N-type separation layer is the GaN layer of n-type doping or the GaN layer of n-type doping and does not adulterate
The superlattice structure of the alternately laminated formation of GaN layer.
Preferably, the number of plies of the GaN layer of n-type doping described in the superlattice structure and the GaN layer that do not adulterate
Identical, the number of plies of the GaN layer that do not adulterate is 3~10 layers.
On the other hand, described the embodiment of the invention provides a kind of manufacturing method of the epitaxial wafer of GaN base light emitting
Manufacturing method includes:
Buffer layer, nucleating layer, layer of undoped gan, N-type GaN layer, N-type separation layer, stress release are sequentially formed on substrate
Layer, Quantum Well, p-type GaN layer；
Wherein, the doping concentration of N type dopant is less than N type dopant in the N-type GaN layer in the N-type separation layer
Doping concentration, and the thickness of the N-type separation layer is less than the thickness of the N-type GaN layer.
Optionally, the doping concentration of N type dopant is N type dopant in the N-type GaN layer in the N-type separation layer
The 1/60~1/25 of doping concentration.
Optionally, the 1/25~1/6 of the thickness with a thickness of the N-type GaN layer of the N-type separation layer.
Optionally, the N-type separation layer is the GaN layer of n-type doping or the GaN layer of n-type doping and does not adulterate
The superlattice structure of the alternately laminated formation of GaN layer.
Preferably, the number of plies of the GaN layer of n-type doping described in the superlattice structure and the GaN layer that do not adulterate
Identical, the number of plies of the GaN layer that do not adulterate is 3~10 layers.
Technical solution provided in an embodiment of the present invention has the benefit that
By forming N-type separation layer in N-type GaN layer, the doping concentration of N type dopant is less than N-type in N-type separation layer
The doping concentration of N type dopant in GaN layer, and the thickness of N-type separation layer is less than the thickness of N-type GaN layer, can obstruct due to crystalline substance
The stress dislocation that lattice mismatch and thermal mismatching are formed, the openings of sizes in the V-arrangement hole that effective agretope fault is formed, delay V-arrangement hole
Opening is formed, and is conducive to epitaxial wafer and is carried out stress release, and V-arrangement, which is cheated, when forming P-type layer is merged, and eventually forms smooth table
Face substantially improves the crystal quality of epitaxial wafer, and the breakdown reverse voltage of made chip is substantially improved and (promotes 50% or so), resists
Ageing properties are obviously improved.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of the epitaxial wafer for GaN base light emitting that the embodiment of the present invention one provides；
Fig. 2 is the signal that backward voltage provided by Embodiment 2 of the present invention changes with the variation of the thickness of N-type separation layer
Figure；
Fig. 3 is the backward voltage of the offer of the embodiment of the present invention three with the change of the doping concentration of N type dopant in N-type separation layer
The schematic diagram changed and changed；
Fig. 4 is the structural schematic diagram for the N-type separation layer that the embodiment of the present invention four provides；
Fig. 5 is a kind of process of the manufacturing method of the epitaxial wafer for GaN base light emitting that the embodiment of the present invention five provides
Schematic diagram.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of epitaxial wafers of GaN base light emitting, and referring to Fig. 1, which includes lining
Bottom 1 and the buffer layer 2 being sequentially laminated on substrate 1, nucleating layer 3, layer of undoped gan 4, N-type GaN layer 5, N-type separation layer 6,
Stress release layer 7, Quantum Well 8, p-type GaN layer 9.
In the present embodiment, the doping concentration of N type dopant is less than N type dopant in N-type GaN layer in N-type separation layer
Doping concentration, and the thickness of N-type separation layer is less than the thickness of N-type GaN layer.
Optionally, the doping concentration of N type dopant can be the doping of N type dopant in N-type GaN layer in N-type separation layer
The 1/60~1/25 of concentration, backward voltage is larger at this time.
Optionally, the thickness of N-type separation layer can for N-type GaN layer thickness 1/25~1/6, at this time backward voltage compared with
Greatly.
In a kind of implementation of the present embodiment, N-type separation layer can be the GaN layer of n-type doping.
In another implementation of the present embodiment, N-type separation layer can be the GaN layer of n-type doping and not adulterate
The alternately laminated formation of GaN layer superlattice structure.
Optionally, the GaN layer of n-type doping is identical with the number of plies for the GaN layer that do not adulterate in superlattice structure, does not adulterate
GaN layer the number of plies can be 3~10 layers, defect barriering effect is good at this time.
Specifically, substrate can be Sapphire Substrate, and the size of substrate can be 2 inches, 4 inches or 8 inches；Buffering
Layer can be the GaN layer of two-dimensional growth, and nucleating layer can be the GaN layer of three dimensional growth；Stress release layer is InGaN layer and GaN
The superlattice structure of the alternately laminated formation of layer；Quantum Well can be InGaN quantum well layer, or InGaN quantum well layer and
The superlattice structure of the alternately laminated formation of GaN quantum barrier layer.
The embodiment of the present invention in N-type GaN layer by forming N-type separation layer, the doping of N type dopant in N-type separation layer
Concentration is less than the doping concentration of N type dopant in N-type GaN layer, and the thickness of N-type separation layer is less than the thickness of N-type GaN layer, can
To obstruct the stress dislocation due to lattice mismatch and thermal mismatching formation, the openings of sizes in the V-arrangement hole that effective agretope fault is formed,
The opening in delay V-arrangement hole is formed, and is conducive to epitaxial wafer and is carried out stress release, and V-arrangement, which is cheated, when forming P-type layer is merged, last shape
At even curface, the crystal quality of epitaxial wafer is substantially improved, the breakdown reverse voltage of made chip, which is substantially improved, (to be promoted
50% or so), anti-aging property is obviously improved.
Embodiment two
The embodiment of the invention provides a kind of epitaxial wafer of GaN base light emitting, the epitaxial wafer provided for embodiment one
A kind of specific implementation.In the present embodiment, N-type separation layer is the GaN layer of n-type doping, N type dopant in N-type separation layer
Doping concentration remains unchanged, and the 1/25~1/6 of the thickness with a thickness of N-type GaN layer of N-type separation layer.
Referring to fig. 2, when N-type separation layer can be n-type doping GaN layer, and in N-type separation layer N type dopant doping
When concentration remains unchanged, backward voltage is gradually increased with the thickness of N-type separation layer, first increases and then decreases, and works as N-type separation layer
The thickness with a thickness of N-type GaN layer 1/25~1/6 when, backward voltage is maximum.
The embodiment of the present invention is the GaN layer of n-type doping, N by forming N-type separation layer, N-type separation layer in N-type GaN layer
The doping concentration of N type dopant remains unchanged in type separation layer, the thickness with a thickness of N-type GaN layer of N-type separation layer 1/25~
1/6, the preparatory blocking part dislocation before stress release layer, the opening in delay V-arrangement hole improves the backward voltage of chip, enhances
PN junction pressure resistance feature, reduces the leak channel of chip, promotes the anti-failure ability of chip.
Embodiment three
The embodiment of the invention provides a kind of epitaxial wafer of GaN base light emitting, the epitaxial wafer provided for embodiment one
A kind of specific implementation.In the present embodiment, N-type separation layer is the GaN layer of n-type doping, and the thickness of N-type separation layer is kept not
Become, the doping concentration of N type dopant is 1/60~1/25 of the doping concentration of N type dopant in N-type GaN layer in N-type separation layer.
Referring to Fig. 3, when N-type separation layer can be the GaN layer of n-type doping, and the thickness of N-type separation layer remains unchanged,
Backward voltage is gradually increased with the doping concentration of N type dopant in N-type separation layer, first increases and then decreases, and works as N-type separation layer
When the doping concentration of middle N type dopant is 1/60~1/25 of the doping concentration of N type dopant in N-type GaN layer, backward voltage is most
Greatly.
The embodiment of the present invention is the GaN layer of n-type doping, N by forming N-type separation layer, N-type separation layer in N-type GaN layer
The thickness of type separation layer remains unchanged, and the doping concentration of N type dopant is N type dopant in N-type GaN layer in N-type separation layer
The 1/60~1/25 of doping concentration improves the extended capability of electric current, can be conducive to stress release below with fill part dislocation
The growth of layer, the opening in the hole delay V, is improved backward voltage, chip is made to be not easy to be failed due to electric leakage.It can also keep away simultaneously
The doping concentration for exempting from N type dopant in N-type separation layer is excessive and generates new defect, carries out defect barrier to N-type separation layer and makes
At adverse effect.
Example IV
The embodiment of the invention provides a kind of epitaxial wafer of GaN base light emitting, the epitaxial wafer provided for embodiment one
A kind of specific implementation.In the present embodiment, referring to fig. 4, N-type separation layer is the GaN layer 61 of n-type doping and does not adulterate
The superlattice structure of the alternately laminated formation of GaN layer 62, the doping concentration of N type dopant is N-type in N-type GaN layer in N-type separation layer
The 1/60~1/25 of the doping concentration of dopant, the thickness of N-type separation layer are less than the thickness of N-type GaN layer.
Specifically, in superlattice structure, the doping concentration of N type dopant is identical in the GaN layer of each layer n-type doping, or
The doping concentration of N type dopant is different in the GaN layer of adjacent two layers n-type doping.
The embodiment of the present invention by N-type GaN layer formed N-type separation layer, N-type separation layer be n-type doping GaN layer and
The superlattice structure of the alternately laminated formation of the GaN layer that do not adulterate, the doping concentration of N type dopant is N-type in N-type separation layer
The 1/60~1/25 of the doping concentration of N type dopant in GaN layer is preferably blocked due to lattice mismatch and thermal expansion coefficient not
The opening of defect caused by matching, delay V-arrangement hole is formed, and is effectively controlled the openings of sizes in V-arrangement hole, is improved the reverse breakdown of chip
Voltage endurance capability reduces leakage current, the final quality for promoting crystal.
Embodiment five
The embodiment of the invention provides a kind of manufacturing methods of the epitaxial wafer of GaN base light emitting, and it is real to be suitable for manufacture
Apply the epitaxial wafer that example one is provided to example IV any embodiment.
It in the present embodiment, can be using metallo-organic compound chemical gaseous phase deposition (English: Metal Organic
Chemical Vapor Deposition, referred to as: MOCVD) technology manufacture epitaxial wafer, with trimethyl gallium (TMGa) or three second
Base gallium (TEGa) is used as gallium source, high-purity N H3As nitrogen source, trimethyl indium (TMIn) is used as indium source, trimethyl aluminium (TMAl) conduct
Silicon source, N type dopant select silane (SiH4), and P-type dopant selects two luxuriant magnesium (CP2Mg)。
Specifically, referring to Fig. 5, which includes:
Step 201: buffer layer is formed on the substrate.
In the present embodiment, substrate can be Sapphire Substrate, and the size of substrate can be 2 inches, 4 inches or 8 English
It is very little.Buffer layer can be the GaN layer of two-dimensional growth.
Step 202: forming nucleating layer on the buffer layer.
In the present embodiment, nucleating layer can be the GaN layer of three dimensional growth.
Step 203: layer of undoped gan is formed on nucleating layer.
Step 204: N-type GaN layer is formed in layer of undoped gan.
Step 205: N-type separation layer is formed in N-type GaN layer.
In the present embodiment, the doping concentration of N type dopant is less than N type dopant in N-type GaN layer in N-type separation layer
Doping concentration, and the thickness of N-type separation layer is less than the thickness of N-type GaN layer.
Optionally, the doping concentration of N type dopant can be the doping of N type dopant in N-type GaN layer in N-type separation layer
The 1/60~1/25 of concentration, backward voltage is larger at this time.
Optionally, the thickness of N-type separation layer can for N-type GaN layer thickness 1/25~1/6, at this time backward voltage compared with
Greatly.
In a kind of implementation of the present embodiment, N-type separation layer can be the GaN layer of n-type doping.
In another implementation of the present embodiment, N-type separation layer can be the GaN layer of n-type doping and not adulterate
The alternately laminated formation of GaN layer superlattice structure.
Optionally, the GaN layer of n-type doping is identical with the number of plies for the GaN layer that do not adulterate in superlattice structure, does not adulterate
GaN layer the number of plies can be 3~10 layers, defect barriering effect is good at this time.
Step 206: forming stress release layer on N-type separation layer.
In the present embodiment, stress release layer is the superlattice structure of InGaN layer and the alternately laminated formation of GaN layer.
Step 207: Quantum Well is formed on stress release layer.
In the present embodiment, Quantum Well can be InGaN quantum well layer, or InGaN quantum well layer and GaN quantum
The superlattice structure of the alternately laminated formation of barrier layer.
Step 208: p-type GaN layer is formed in Quantum Well.
The embodiment of the present invention in N-type GaN layer by forming N-type separation layer, the doping of N type dopant in N-type separation layer
Concentration is less than the doping concentration of N type dopant in N-type GaN layer, and the thickness of N-type separation layer is less than the thickness of N-type GaN layer, can
To obstruct the stress dislocation due to lattice mismatch and thermal mismatching formation, the openings of sizes in the V-arrangement hole that effective agretope fault is formed,
The opening in delay V-arrangement hole is formed, and is conducive to epitaxial wafer and is carried out stress release, and V-arrangement, which is cheated, when forming P-type layer is merged, last shape
At even curface, the crystal quality of epitaxial wafer is substantially improved, the breakdown reverse voltage of made chip, which is substantially improved, (to be promoted
50% or so), anti-aging property is obviously improved.
The serial number of the above embodiments of the invention is only for description, does not represent the advantages or disadvantages of the embodiments.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of epitaxial wafer of GaN base light emitting, the epitaxial wafer include substrate and stack gradually over the substrate
Buffer layer, nucleating layer, layer of undoped gan, N-type GaN layer, stress release layer, Quantum Well, p-type GaN layer, which is characterized in that institute
Stating epitaxial wafer further includes the N-type separation layer being layered between the N-type GaN layer and the stress release layer, the N-type separation layer
The doping concentration of middle N type dopant is less than the doping concentration of N type dopant in the N-type GaN layer, and the N-type separation layer
Thickness is less than the thickness of the N-type GaN layer；The N-type separation layer is the GaN layer of n-type doping and the GaN layer that do not adulterate alternating
The superlattice structure formed is laminated.
2. epitaxial wafer according to claim 1, which is characterized in that the doping concentration of N type dopant in the N-type separation layer
It is 1/60~1/25 of the doping concentration of N type dopant in the N-type GaN layer.
3. epitaxial wafer according to claim 1 or 2, which is characterized in that the N-type separation layer with a thickness of the N-type GaN
The 1/25~1/6 of the thickness of layer.
4. epitaxial wafer according to claim 1 or 2, which is characterized in that n-type doping described in the superlattice structure
GaN layer is identical with the number of plies of the GaN layer that do not adulterate, and the number of plies of the GaN layer that do not adulterate is 3~10 layers.
5. a kind of manufacturing method of the epitaxial wafer of GaN base light emitting, which is characterized in that the manufacturing method includes:
Sequentially form on substrate buffer layer, nucleating layer, layer of undoped gan, N-type GaN layer, N-type separation layer, stress release layer,
Quantum Well, p-type GaN layer；
Wherein, in the N-type separation layer N type dopant doping concentration be less than the N-type GaN layer in N type dopant doping
Concentration, and the thickness of the N-type separation layer is less than the thickness of the N-type GaN layer；The N-type separation layer is the GaN of n-type doping
The superlattice structure of layer and the alternately laminated formation of GaN layer that do not adulterate.
6. manufacturing method according to claim 5, which is characterized in that the doping of N type dopant is dense in the N-type separation layer
Degree is 1/60~1/25 of the doping concentration of N type dopant in the N-type GaN layer.
7. manufacturing method according to claim 5 or 6, which is characterized in that the N-type separation layer with a thickness of the N-type
The 1/25~1/6 of the thickness of GaN layer.
8. manufacturing method according to claim 5 or 6, which is characterized in that n-type doping described in the superlattice structure
GaN layer is identical with the number of plies of the GaN layer that do not adulterate, and the number of plies of the GaN layer that do not adulterate is 3~10 layers.
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