CN106707262A - Laser pulse transmission circuit - Google Patents
Laser pulse transmission circuit Download PDFInfo
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- CN106707262A CN106707262A CN201611026174.0A CN201611026174A CN106707262A CN 106707262 A CN106707262 A CN 106707262A CN 201611026174 A CN201611026174 A CN 201611026174A CN 106707262 A CN106707262 A CN 106707262A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/484—Transmitters
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- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a laser pulse transmission circuit. The laser pulse transmission circuit is provided with a gate chip, a low voltage differential voltage stabilizer, a driving integration chip and a field effect tube, wherein the two input ends of the gate chip are connected in parallel and then are connected with the output end of a triggering signal, and the output end of the gate chip is connected with the enabling end of the driving integration chip; the power source end of the gate chip passes through the low voltage differential voltage stabilizer and is connected with a power source, and the grounding end of the gate chip is grounded; the power source end of the driving integration chip is connected with the power source, the ENBA end of the driving integration chip is connected with VDD1, the AGND end and POND end are respectively grounded, and the two output ends of the driving integration chip are connected in parallel, and then are connected with a grid of the field effect tube through a resistor; a source of the field effect tube is grounded, and the grid of the field effect tube passes through a resistor, a transistor and the other transistor and is connected with a drain. The laser pulse transmission circuit has the advantage that when the laser tube transmits laser, the full-power transmission of laser power is realized.
Description
Technical field
The present invention relates to laser pulse ranging instrument technical field, more particularly to a kind of laser pulse emission circuit.
Background technology
Laser pulse emission circuit, is the circuit for commonly using in laser pulse ranging instrument.Its laser arteries and veins to transmitting
Required when rushing.In phase laser distance measurement instrument, its transmitting laser power should≤5mW, this is the mark of secure context
Alignment request.And in the application of pulse ranging, its transmitting laser power should≤0.4mW, the rising edge of its pulse, trailing edge
It is required that≤10ns, the width requirement≤100ns of laser pulse.
According to the technical requirements for proposing, it is n=905nm to use wavelength, and power is the impulse transmitting tube circuit of 75W, application
In laser pulse ranging instrument, its circuit structure such as Fig. 1, its laser tube working condition：
In the measurements, what is really worked is pulse signal rising edge or trailing edge and pulse width.Its rising edge, under
Drop determines emitted energy size along determining measuring accuracy, pulse width.So the width of the chopped pulse signal that should try one's best, is one
Definite value, makes transmitting pulse try one's best close to the requirement of regulation.(pulse width that laser tube specifies is：≤100nS)
In Fig. 1, the main cause of influence pulse width is：Resistance R4Electric capacity is charged, the forward conduction electricity of laser tube
Resistance RDIncrease with the reduction of conducting voltage, the conducting resistance R of its laser tubeDNo longer it is small impedance, is connected in parallel on laser tube two ends
Resistance R3=100 Ω are not that very little etc. is caused.
The discharge time τ of capacitor1Rising time when being exactly laser tube emissions laser, during the Reverse recovery of capacitor
Between τ2It is exactly the time (determining the width of laser pulse) required for laser tube stops transmitting laser.Its τ2For：
τ2=(RQ4+RD1||R5||R4)×C4
During conducting state, R04≤ 1 Ω, RD1||R5||R4≈R5=100 Ω, C4=22nF,
Then：τ2≈2200nS。
Due to Q1, the driver of Q2, Q3 composition, its maximum drive current is about 800mA, during pulsed drive, drives
Streaming current does not reach the grid current of FET needs, so maximum electricity when drain current does not reach laser tube emissions laser
Stream, so laser power is smaller.Because τ2≈ 2200nS are so laser pulse width is than larger.It is specific to drive laser tube to light
Drive pulse waveform such as Fig. 2,
Actual test transmitting laser pulse signal oscillogram such as Fig. 3
Note：1. pulse front edge is about：6ns
2. pulse overall width is about：3000ns
3. laser effective pulse width is about：≥400ns
Because the peak value of laser power is 75W, in actual applications, due to the characteristic of circuit, the actual transmission of laser tube
Laser power only has about 13W, and due to the influence of optical texture, the light power of actual object lens be only laser power ten/
One or so ,≤1.3W peak value.In the cycle of impulse ejection, mean power is：0.4mW or so.Substantially conformed in secure context
It is required that, but, for rising edge of a pulse, trailing edge, pulse width aspect but there are problems that it is very big, meanwhile, pulse recurrence frequency
Can not improve, only 250HZ or following.
The content of the invention
The purpose of the present invention be overcome prior art exist defect, there is provided one kind cause laser tube launch laser when,
Laser power can be launched with full power, laser rising edge, trailing edge, pulse width all meet technical requirements, and pulse width
Adjustable, the repetition rate of trigger pulse can easily reach more than 100KHZ, and average pulse power meets swashing for safety standard
Light pulse emission circuit.
Realizing the technical scheme of the object of the invention is：A kind of laser pulse emission circuit, with door chip IC 1, low voltage difference
Voltage-stablizer IC2, driving integrated chip IC3 and FET IC4；With triggering after two inputs parallel connection of the door chip IC 1
The output end of signal is connected, and the output end of door chip IC 1 is connected with the Enable Pin of integrated chip IC3 is driven, door chip IC 1
Power end is followed by power vd D1, the earth terminal ground connection of door chip IC 1 by low-dropout regulator；The driving integrated chip IC3
Power end VDD meet power vd D1, drive the ENBA termination VDD1 of integrated chip IC3, AGND ends and POND ends are grounded, drive
The grid G of FET IC4 is connected to after two output ends parallel connection of integrated chip IC3 by resistance R1；The FET IC4
Source S ground connection, the grid G of FET IC4 is connected after passing sequentially through resistance R3, transistor Q1 and transistor Q2 with drain D.
Electric capacity C3 and light emitting diode D1 is passed sequentially through after the drain D parallel connection of FET IC4 described in above-mentioned technical proposal
After be grounded.
The base stage connecting resistance R3 of transistor Q1 described in above-mentioned technical proposal, grounded emitter, colelctor electrode connects transistor Q2's
Base stage；The emitter stage of the transistor Q2 connects the drain D of FET IC4, and colelctor electrode is connected to the base of its own by resistance R4
Pole.
Ground connection is connected between power end VDD and power vd D1 that integrated chip IC3 is driven described in above-mentioned technical proposal
Drop-down electric capacity C1 and C2.
After adopting the above technical scheme, the present invention has following positive effect：
(1) the invention enables laser tube launch laser when, can with full power launch laser power, laser rising edge, under
Drop edge, pulse width all meet technical requirements, and pulse width is adjustable, and the repetition rate of trigger pulse can be easily reached
More than 100KHZ, average pulse power meets safety standard.
Brief description of the drawings
In order that present disclosure is easier to be clearly understood, it is right below according to specific embodiment and with reference to accompanying drawing
The present invention is described in further detail, wherein
Fig. 1 is the circuit diagram of traditional laser pulse emission circuit；
Fig. 2 is the driving pulse width signal figure of traditional laser pulse emission circuit；
Fig. 3 is the actual test transmitting laser pulse signal oscillogram of traditional laser pulse emission circuit；
Fig. 4 is circuit diagram of the invention；
Fig. 5 is driving pulse width signal figure of the invention；
Fig. 6 is that actual test of the invention launches laser pulse signal oscillogram；
Specific embodiment
(embodiment 1)
See Fig. 4 to Fig. 5, the present invention has door chip IC 1, low-dropout regulator IC2, drives integrated chip IC3 and field effect
Should pipe IC4；It is connected with the output end (3 pin) of socket after two inputs (1,2 pin) parallel connection of the door chip IC 1,
The output end (4 pin) of door chip IC 1 is connected with the Enable Pin EN (1 pin) of integrated chip IC3 is driven, the electricity of door chip IC 1
Source (5 pin) is followed by power vd D1, earth terminal (3 pin) ground connection of door chip IC 1 by low-dropout regulator；The driving
The power end VDD (1 pin) of integrated chip IC3 meets power vd D1, drives the ENBA ends (3 pin) of integrated chip IC3 to connect power supply
VDD1, AGND end (4 pin) and POND ends (5 pin) are grounded, and drive two output ends (6,7 pin) of integrated chip IC3
The grid G (4 pin) of FET IC4 is connected to after parallel connection by resistance R1；Source S (1,2,3 pipes of the FET IC4
Pin) ground connection, the grid G (4 pin) of FET IC4 pass sequentially through after resistance R3, transistor Q1 and transistor Q2 with drain D
(5,7,8 pin) is connected.
After electric capacity C3 and light emitting diode D1 being passed sequentially through after drain D (5, the 7,8 pin) parallel connection of the FET IC4
Ground connection, and the commonly connected place of electric capacity C3 and light emitting diode D1 is connected with the diode D2 of the ground connection and resistance R5 of ground connection.
The base stage connecting resistance R3 of the transistor Q1, grounded emitter, colelctor electrode connects the base stage of transistor Q2；The crystal
The emitter stage of pipe Q2 connects the drain D (5,7,8 pin) of FET IC4, and colelctor electrode is connected to the base stage of its own by resistance R4.
The power end VDD (1 pin) of the driving integrated chip IC3 is connected with the drop-down electricity of ground connection and power vd D1 between
Hold C1 and C2.
Drive circuit has triode circuit to make drive integrated circult UCC27322 into, its characteristic such as following table：Drive circuit
UCC27322 circuit basic parameters：
Be can be seen that from These parameters：
Putting high level voltage should be more than 2.7V
Input low level voltage should be less than 1.1V
Output peak point current should >=9A
Effective current should >=3A (load be capacitive, load capacitance is 10nF).
Directly can be driven by IC such as MPU.
FET is made up of FDMC86160, and its circuit basic parameter is as follows：
Be can be seen that from FET FDMC86160 characteristic curves：
A. V is worked asGSDuring >=10V, ID>=50A now, BVSD=0.8~1.0V
B. gate drive current is：
Wherein：dtIt is calculated as follows：In rising edge of a pulse trIn=10ns, driving voltage reaches corresponding when 95%
Time is dt,
Then：So：
dt=ln0.05 × τ=3 of τ ≈ 3 × 10ns=30ns
It is when the time:tdDriving voltage is during=30ns：VGSDuring=10V, driving grid current is：430mA, drain electrode electricity
Stream can reach：ID=50A.
There is circuit parameter to can be seen that when driving current is 430mA, flow through resistance R1The pressure drop of generation is：
VR1=430mA × 2 Ω=0.86V.
Therefore, the driving voltage of prime should be：
Uout=0.86V+10V=10.86V
Because prime supply voltage is 15V, the electrical power of prime is：
PIN>=15V × 430mA=6450mW
Circuit theory is described as follows：
Assuming that：Transmitting high pressure is 60V, when it is high level to launch pulse, transistor Q1 conductings, transistor Q2 cut-offs, electricity
Container C3=33nF does not charge；Transistor FDMC86160 is turned on, electric capacity c3On electricity discharged by MC86160, now laser tube
It is luminous.When it is low level to launch trigger pulse, transistor Q1 cut-offs so that Q2 is turned on, now to capacitor C333nF charges,
When transistor Q2 is turned on, its conducting resistance is about：
So the charging resistor of capacitor is about：Ron≤1Ω。
Now, charge constant is：
τ=RC≤1 Ω × 33nF=33ns (ignoring other influences).
In fact, when being charged on capacitor, laser tube does not light, capacitor charge time constant calculations are：(herein partly
In the individual cycle, laser tube does not light)
In half period 2.5ms, it is full of voltage on capacitor：60V.
In the other half period of trigger signal, capacitor discharge, now when capacitor discharge, laser tube emissions swash
Light.
Capacitor discharge time constant is：
Wherein：RCO--- resistance when-FET is turned on.RCO=0.023 Ω
RmThe resistance such as --- -- wiring board lead.Rm≤ 1 Ω (takes 0.6 Ω)
RD2--- resistance when-laser tube is turned on.
With turn-on voltage variation, its resistance value is change.
Resistance during conducting is：
With the reduction of conducting voltage, its conducting resistance will increase.Due to parallel resistance R5=3 Ω, thus estimation when with
The Ω of maximum 3 is calculated.
R5--- ----outer meeting resistance value.R in experiment5Can be with value：3 Ω or 4.7 Ω.
Then：All-in resistance is about：3.7 Ω or so.
Capacitor reverse recovery time is：t2=3.7 × 33nF=122.1nS
Pulse keep width be：
(during actual tests, R5=4.7 Ω, C3=33nF, reverse recovery time is：
t2=5.4 × 33nF=178.2nS
Pulse keep width be：
The rising edge of a pulse time be laser tube start hair Laser Time be:t1, pulse falling edge is exactly that laser tube does not light
Time：t2, if it is assumed that：The luminous threshold value of laser tube is：8V, the threshold value of laser is not sent out is：7.5V, then rising edge of a pulse and
The trailing edge time is about：
Specific drive pulse waveform such as Fig. 5 for driving laser tube luminous.
Actual test signal waveforms result such as Fig. 6：
The actual test laser tube luminous time is：
Rise time is about：6ns
Fall time is about：6nS
Pulse width is：τ0=30nS
Pulse overall width：To=45nS
Impulse amplitude：Uk=27.8V
Pulse frequency is about：
Parameter according to laser tube PL90-3 shows that laser work voltage is：
Minimum value：8V
Representative value is：9V
Maximum is：11V
Peak power：P0=75W
In tellurometer, if the power output of laser tube is 90W peak values, it is in repetition rate：During 200HZ,
Repetition period is：In the interval of 5ms, its mean power is about：
Will be more than human eye I classes safety standard (0.4 π W), the requirement for failing safety standards, so by pulse recurrence frequency
Reduce such as：100HZ.Now, the repetition period be：Then mean power is 10mS：0.33mW, will meet human eye I class safety standards
(0.4πW)。
Because the width of pulse signal is reduced to：τ0=30nS, so pulse recurrence frequency can very up to about 10MHZ
More than.And its pulse width can be changed by adjusting the size of electric capacity C.When actually used, as selection C=5000pF
When, the actual measurement of pulse width only has about 4ns or so, and rising edge of a pulse, trailing edge are about 4ns.
In tellurometer when using, element value is：
Transmitting electric capacity：C=33nF
Parallel resistance：R5=4.7 Ω
Rising edge of a pulse：t1≈5.6nS
Pulse falling edge：t2≈5.6nS
Pulse width：td≈30nS
Pulse overall width：To≈42nS
Impulse amplitude：Uk=34.6V
Because parallel resistance R5The effect of=4.7 Ω, will shunt portion of electrical current, resistance R in laser emission time5On
Shunt current is：
Now the maximum current of laser tube is：ID≈ 50A-11A=39A.
Actual impulse amplitude can specific capacitance device C3The charging voltage 60V of=33nF is low, only reaches about 34.6V.From swash
Light pipe luminosity curve is checked in, and when laser tube flows through electric current for 39A, laser tube peak power is about:80W.Therefore, laser tube can
To be used under the working condition of full power.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, should be understood that and the foregoing is only specific embodiment of the invention, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in guarantor of the invention
Within the scope of shield.
Claims (4)
1. a kind of laser pulse emission circuit, it is characterised in that：It is integrated with door chip IC 1, low-dropout regulator IC2, driving
Chip IC 3 and FET IC4；It is connected with the output end of trigger signal after two inputs parallel connection of the door chip IC 1,
The output end of door chip IC 1 is connected with the Enable Pin of integrated chip IC3 is driven, and the power end of door chip IC 1 is steady by low voltage difference
Depressor is followed by power vd D1, the earth terminal ground connection of door chip IC 1；The power end VDD for driving integrated chip IC3 connects power supply
VDD1, drives the ENBA termination VDD1 of integrated chip IC3, and AGND ends and POND ends are grounded, and drive two of integrated chip IC3
The grid G of FET IC4 is connected to after output end parallel connection by resistance R1；The source S ground connection of the FET IC4, field effect
Should pipe IC4 grid G pass sequentially through resistance R3, transistor Q1 and transistor Q2 after be connected with drain D.
2. laser pulse emission circuit according to claim 1, it is characterised in that：The drain D of the FET IC4 is simultaneously
It is grounded after electric capacity C3 and light emitting diode D1 is passed sequentially through after connection.
3. laser pulse emission circuit according to claim 1, it is characterised in that：The base stage connecting resistance of the transistor Q1
R3, grounded emitter, colelctor electrode connects the base stage of transistor Q2；The emitter stage of the transistor Q2 connects the drain electrode of FET IC4
D, colelctor electrode is connected to the base stage of its own by resistance R4.
4. laser pulse emission circuit according to claim 1, it is characterised in that：The electricity of the driving integrated chip IC3
The drop-down electric capacity C1 and C2 of ground connection is connected between source VDD and power vd D1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611026174.0A CN106707262B (en) | 2016-11-18 | 2016-11-18 | Laser pulse emission circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611026174.0A CN106707262B (en) | 2016-11-18 | 2016-11-18 | Laser pulse emission circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106707262A true CN106707262A (en) | 2017-05-24 |
| CN106707262B CN106707262B (en) | 2019-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611026174.0A Active CN106707262B (en) | 2016-11-18 | 2016-11-18 | Laser pulse emission circuit |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009295681A (en) * | 2008-06-03 | 2009-12-17 | Sumitomo Electric Ind Ltd | Laser diode driving circuit |
| CN101764352A (en) * | 2009-12-03 | 2010-06-30 | 宁波振东光电有限公司 | Pulse driving circuit for semiconductor laser |
| CN101895058A (en) * | 2010-07-07 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | High-speed narrow pulse modulation driving power supply for semiconductor laser |
| JP2012156458A (en) * | 2011-01-28 | 2012-08-16 | Yokogawa Electric Corp | Laser diode drive circuit and optical time-domain reflection measurement instrument |
| CN205452780U (en) * | 2016-01-22 | 2016-08-10 | 北京国科欣翼科技有限公司 | A laser pulse code production device for car collision avoidance system |
-
2016
- 2016-11-18 CN CN201611026174.0A patent/CN106707262B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009295681A (en) * | 2008-06-03 | 2009-12-17 | Sumitomo Electric Ind Ltd | Laser diode driving circuit |
| CN101764352A (en) * | 2009-12-03 | 2010-06-30 | 宁波振东光电有限公司 | Pulse driving circuit for semiconductor laser |
| CN101895058A (en) * | 2010-07-07 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | High-speed narrow pulse modulation driving power supply for semiconductor laser |
| JP2012156458A (en) * | 2011-01-28 | 2012-08-16 | Yokogawa Electric Corp | Laser diode drive circuit and optical time-domain reflection measurement instrument |
| CN205452780U (en) * | 2016-01-22 | 2016-08-10 | 北京国科欣翼科技有限公司 | A laser pulse code production device for car collision avoidance system |
Non-Patent Citations (1)
| Title |
|---|
| 张湘斌等: "基于UCC27322 的中功率半导体激光器驱动电路设计", 《制导与引信》 * |
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