CN106568548A - Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology - Google Patents
Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology Download PDFInfo
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- CN106568548A CN106568548A CN201610964608.5A CN201610964608A CN106568548A CN 106568548 A CN106568548 A CN 106568548A CN 201610964608 A CN201610964608 A CN 201610964608A CN 106568548 A CN106568548 A CN 106568548A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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Abstract
The invention discloses a capacitance-type absolute-pressure micro-pressure gas pressure sensor based on a SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology, which relates to the field of capacitance-type absolute-pressure micro-pressure gas pressure sensor sensitive chips. The capacitance-type absolute-pressure micro-pressure gas pressure sensor based on the SOI-MEMS technology comprises an SOI wafer device layer, a silicon dioxide layer, an SOI wafer substrate layer and bonded and packaged cover plate glass, wherein the SOI wafer device layer has a square structure and is horizontally located at the bottom part; the silicon dioxide layer is fixedly arranged on the upper surface of the SOI wafer device layer; the SOI wafer substrate layer is fixedly arranged on the upper surface of the silicon dioxide layer; and the bonded and packaged cover plate glass is fixedly arranged on the upper surface of the SOI wafer substrate layer. An electrode lead can be prevented from passing through a vacuum cavity packaged and bonded interface, the vacuum packaging performance and the reliability of the micro-pressure sensor are increased, the performance indexes, the consistency and the yield of the sensor can be well ensured, the needed micro-nano process is simple, and the realization cost is low.
Description
Technical field
The present invention relates to a kind of condenser type absolute pressure minute-pressure baroceptor sensitive chip field, particularly a kind of to be based on SOI-
The condenser type absolute pressure minute-pressure baroceptor of MEMS technology.
Background technology
Absolute pressure minute-pressure baroceptor be widely used in space flight and aviation deep space meteorological detection (moon exploration, mars exploration etc.),
The field such as petrochemical industry, environmental protection, medical treatment, instrument and equipment pneumatic control and industrial process detection and control.Microelectromechanical systems
One core technology difficult point of (Micro-Electro-Mechanical System, be abbreviated as MEMS) baroceptor is true
Empty reference cavity and contact conductor are drawn, and absolute pressure minute-pressure baroceptor compares normal pressure baroceptor need to be higher to reference vacuum chamber
Require, vacuum, the vacuum in reference vacuum chamber maintain for a long time the comprehensive essence to minute-pressure baroceptor such as ability, encapsulation stress
The parameter indexs such as degree, temperature drift, long-time stability have a major impact.In addition, the micro-nano technology of minute-pressure sensitive thin film makes
It is also crucial, minute-pressure sensitive thin film has decisive influence to performance indications such as resolution ratio, the stability of micro-pressure sensor.
The encapsulation process implementation in MEMS reference vacuums chamber mainly has：Characteristics of Direct Wafer Bonded (Si direct bonding, silica glass
Anode linkage etc.), Intermediate Layer Bonding technology (metal heat pressing, BCB, glass paste etc.) etc..The lead-out mode of contact conductor is main
Have：Thin metal electrode lead figure directly through bonded layer, using the backing material of super-low resistivity directly as electrode etc..It is micro-
The micro-nano technology implementation of pressure sensitive thin film mainly has：Precision ground attenuated polishing, SOI (Silicon on Insulator)
The approach such as device layer, etch-stop.
Korea Kang Ryeol Lee et al. (Kang Ryeol Lee, Kunnyun Kim.Fabrication of
Capacitive Absolute Pressure Sensor Using Si-Au Eutectic Bonding in SOI
Wafer.International MEMS Conference, the method taken of absolute pressure micro-pressure sensor 2006) developed is：Adopt
With gold-silicon altogether molten bonding by the silicon chip that corrosion has pit be bonded with SOI device layer together with formed and seal reference vacuum chamber, then go
Except substrate layer does capacitance electrode film, then there is the glass anode of capacitance gap and air guide pit and capacitance electrode film with corrosion
Bonding pattern is bonded together.Gold-silicon that the method is adopted is molten altogether to be bonded due to the common molten high-temperature outgassing of metal and larger thermal mismatching,
The vacuum levels of encapsulation, interfacial stress affect the aspects such as chip performance, long-term reliability to there is challenge, in addition, capacitance gap
Communicate with tested air pressure environment and reduce reliability, it is dust-proof to have high demands.The electric capacity that ISSYS companies of the U.S. and University of Michigan develop
Formula absolute pressure minute-pressure baroceptor (Sonbol Massoud-Ansari, Yafan Zhang.An Ultra-Sensitive,
High-Vacuum Absolute Capacitive Pressure Sensor.The 14th IEEE International
Conference on MEMS, are 2001) using the sensitive thin film micro-nano based on DWP (Dissolved Wafer Process)
Process technology, realizes that vacuum sealed package and electrode wires are drawn simultaneously with growing polycrystalline silicon scheme.Program micro-nano technology technique
Complex procedures are various, difficulty is big, need expensive instrument and equipment many, and yield rate ensures that challenge is big.
The content of the invention
It is an object of the invention to overcome the above-mentioned deficiency of prior art, there is provided the condenser type based on SOI-MEMS technologies is exhausted
Pressure minute-pressure baroceptor, it is to avoid contact conductor encapsulates bonded interface through vacuum chamber, increases the vacuum seal of micro-pressure sensor
Dress Performance And Reliability, the performance indications of sensor, uniformity, yield rate can be ensured very well；Required micro-nano technique letter
Single, cost of implementation is relatively low.
The above-mentioned purpose of the present invention is achieved by following technical solution：
Based on the condenser type absolute pressure minute-pressure baroceptor of SOI-MEMS technologies, including SOI wafer device layer, silica
Layer, SOI wafer substrate layer and bonding packaging cover-plate glass；Wherein, SOI wafer device layer is square structure, and is positioned horizontally in bottom
Portion；Silicon dioxide layer is fixedly mounted on the upper surface of SOI wafer device layer；SOI wafer substrate layer is fixedly mounted on silica
The upper surface of layer；Bonding packaging cover-plate glass is fixedly mounted on the upper surface of SOI wafer substrate layer.
In the above-mentioned condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies, the silicon dioxide layer is side
Shape flake structure, middle setting has manhole.
In the above-mentioned condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies, erect along SOI wafer substrate layer
Nogata is to the cylindrical SOI substrate layer through-hole structure of processing；The SOI substrate layer through-hole structure vertical direction is located at silicon dioxide layer
Manhole in the range of.
In the above-mentioned condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies, in SOI wafer substrate layer
Bottom surface fixedly mounts the SOI wafer substrate layer Ohmic contact of rectangular structure.
In the above-mentioned condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies, the SOI wafer device layer
Lower surface fixedly mount rectangular structure SOI wafer device layer Ohmic contact.
In the above-mentioned condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies, the bonding packaging cover plate glass
The lower surface of glass is provided with circular cover glass pit；The size of the circular cover glass pit is circular with silicon dioxide layer logical
The consistent size in hole.
In the above-mentioned condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies, the circular cover glass hole
Fe Getter Films Prepared is installed with the bottom surface of groove.
In the above-mentioned condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies, the Fe Getter Films Prepared is circle
Shape flake structure, and the high groove depth less than circular cover glass pit of Fe Getter Films Prepared.
In the above-mentioned condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies, the SOI wafer device layer
It is monocrystalline silicon with SOI wafer substrate layer, and the Ω of resistivity light rain 0.005 of SOI wafer device layer and SOI wafer substrate layer
cm。
The present invention has the advantage that compared with prior art：
(1) capacitance-sensitive air pressure scheme of the invention using super-low resistivity (<0.005 Ω cm) SOI wafer, its device
Part layer and substrate layer realize that electrode wires are drawn respectively as the battery lead plate of sensitization capacitance two with metal-silicon Ohmic contact, it is to avoid electricity
Pole lead encapsulates bonded interface through vacuum chamber, increases the Vacuum Package Performance And Reliability of micro-pressure sensor；
(2) design of SOI substrate layer through-hole structure of the invention takes into account consideration effective capacitance polar plate area and intermediate oxidation
Balance between layer corrosion release, device layer is air pressure sensitive thin film, intermediate oxide layer thickness and is sensitization capacitance battery lead plate
Spacing, the thickness and capacitive electrode plates spacing of sensitive thin film can be controlled very precisely by wafer, the performance of sensor
Index, uniformity, yield rate can be ensured very well；
(3) reference vacuum chamber of the invention is using the anode linkage realization of SOI wafer and glass, reliable and stable, hot mistake
With little, Fe Getter Films Prepared is done on glass cover-plate, condition of high vacuum degree can have been obtained after activation, and vacuum maintains for a long time ability excellent；
(4) air pressure sensitization capacitance gap of the present invention is encapsulated in vacuum environment, and capacitor dielectric is that vacuum tightness fixation is not received
Ectocine, sensor has good reliability and stability；
(5) condenser type absolute pressure minute-pressure baroceptor of the invention detection circuit is simple, can be directly micro- with business-like
Together, digital interface output, small volume, lightweight, ghost effect are little, anti-dry for weak capacitive detection IC chip integration packaging
Immunity can be good.
Description of the drawings
Fig. 1 is the Anatomical Structure schematic diagram of inventive sensor；
Fig. 2 is the structure sectional view of inventive sensor.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is described in further detail with specific embodiment：
The Anatomical Structure schematic diagram of sensor is illustrated in figure 1, as seen from the figure, the condenser type based on SOI-MEMS technologies is exhausted
Pressure minute-pressure baroceptor, including SOI wafer device layer 101, silicon dioxide layer 102, SOI wafer substrate layer 103 and bonding envelope
Capping glass sheet 201；Wherein, SOI wafer device layer 101 is square structure, and is positioned horizontally in bottom；Silicon dioxide layer 102 is consolidated
Dingan County is mounted in the upper surface of SOI wafer device layer 101；SOI wafer substrate layer 103 is fixedly mounted on the upper of silicon dioxide layer 102
Surface；Bonding packaging cover-plate glass 201 is fixedly mounted on the upper surface of SOI wafer substrate layer 103；Will using anode linkage method
Together with bonding packaging cover-plate glass 201 is bonded with the substrate layer 103 of SOI wafer piece.
The structure sectional view of sensor is illustrated in figure 2, as seen from the figure, silicon dioxide layer 102 is square sheet structure, in
Between be provided with manhole；Cylindrical SOI substrate layer through-hole structure 104 is processed along the vertical direction of SOI wafer substrate layer 103；Institute
State the vertical direction of SOI substrate layer through-hole structure 104 to be located in the range of the manhole of silicon dioxide layer 102.
The SOI wafer substrate layer Ohmic contact of rectangular structure is fixedly mounted in the bottom surface of SOI wafer substrate layer 103
402。
The lower surface of SOI wafer device layer 101 fixedly mounts the SOI wafer device layer Ohmic contact 401 of rectangular structure.
The lower surface of bonding packaging cover-plate glass 201 is provided with circular cover glass pit 202；The circular cover glass
The size of pit 202 and the consistent size of the manhole of silicon dioxide layer 102.
Fe Getter Films Prepared 301 is installed with the bottom surface of the circular cover glass pit 202.
The Fe Getter Films Prepared 301 is thin rounded flakes structure, and Fe Getter Films Prepared 301 is high less than circular cover glass pit
202 groove depth.
The SOI wafer device layer 101 and SOI wafer substrate layer 103 are monocrystalline silicon, and the He of SOI wafer device layer 101
The Ω cm of resistivity light rain 0.005 of SOI wafer substrate layer 103.
1. the consideration between SOI device thickness degree and sensitive thin film diameter and baroceptor range optimizes in the present embodiment
Device layer thickness 17um, sensitive thin film diameter about 3.6mm, 0～1.5kPa of transducer range；2. the middle dioxy of SOI wafer piece
Change in the consideration the present embodiment between the selection of silicon layer thickness and the characteristic value size of sensitive air pressure electric capacity and choose 6um, sensitive electrical
Hold characteristic value about 8pF；3. substrate layer through-hole structure opening diameter size and pitch of holes with wet etching dispensing device layer as quick
Via openings diameter 40um, pitch of holes 100um are chosen in consideration the present embodiment between sense film；4. wet etching sidetracking release
The technology controlling and process of device layer optimizes and be about controlled in the present embodiment 40～50um, and the corrosion sidetracking can be produced to sensitive thin film diameter
A little increase, Optimization Compensation in design.5. after load exceedes range to a certain degree, two-plate is contacted together sensor, output
Electric capacity is close zero.
The content not being described in detail in description of the invention belongs to the known technology of those skilled in the art.
Claims (9)
1. the condenser type absolute pressure minute-pressure baroceptor of SOI-MEMS technologies is based on, it is characterised in that：Including SOI wafer device layer
(101), silicon dioxide layer (102), SOI wafer substrate layer (103) and bonding packaging cover-plate glass (201)；Wherein, SOI wafer
Device layer (101) is square structure, and is positioned horizontally in bottom；Silicon dioxide layer (102) is fixedly mounted on SOI wafer device layer
(101) upper surface；SOI wafer substrate layer (103) is fixedly mounted on the upper surface of silicon dioxide layer (102)；Bonding packaging lid
Glass sheet (201) is fixedly mounted on the upper surface of SOI wafer substrate layer (103).
2. the condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies according to claim 1, its feature exists
In：The silicon dioxide layer (102) is square sheet structure, and middle setting has manhole.
3. the condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies according to claim 2, its feature exists
In：Cylindrical SOI substrate layer through-hole structure (104) is processed along SOI wafer substrate layer (103) vertical direction；The SOI substrate layer
Through-hole structure (104) vertical direction is located in the range of the manhole of silicon dioxide layer (102).
4. the condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies according to claim 3, its feature exists
In：The SOI wafer substrate layer Ohmic contact of rectangular structure is fixedly mounted in the bottom surface of SOI wafer substrate layer (103)
(402)。
5. the condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies according to claim 1, its feature exists
In：The lower surface of the SOI wafer device layer (101) fixedly mounts the SOI wafer device layer Ohmic contact of rectangular structure
(401)。
6. the condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies according to claim 3, its feature exists
In：The lower surface of the bonding packaging cover-plate glass (201) is provided with circular cover glass pit (202)；The circular cover
The size of glass pit (202) and the consistent size of silicon dioxide layer (102) manhole.
7. the condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies according to claim 6, its feature exists
In：Fe Getter Films Prepared (301) is installed with the bottom surface of the circular cover glass pit (202).
8. the condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies according to claim 7, its feature exists
In：The Fe Getter Films Prepared (301) is thin rounded flakes structure, and Fe Getter Films Prepared (301) is high less than circular cover glass pit
(202) groove depth.
9. the condenser type absolute pressure minute-pressure baroceptor based on SOI-MEMS technologies according to claim 1, its feature exists
In：The SOI wafer device layer (101) and SOI wafer substrate layer (103) are monocrystalline silicon, and SOI wafer device layer (101) and
The Ω cm of resistivity light rain 0.005 of SOI wafer substrate layer (103).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610964608.5A CN106568548A (en) | 2016-10-27 | 2016-10-27 | Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology |
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| CN201610964608.5A CN106568548A (en) | 2016-10-27 | 2016-10-27 | Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107228736A (en) * | 2017-07-20 | 2017-10-03 | 中国电子科技集团公司第四十九研究所 | A kind of miniaturized capacitance formula vacuum pressure sensor encapsulating structure |
| CN108072477A (en) * | 2017-12-05 | 2018-05-25 | 北京遥测技术研究所 | A kind of MEMS baroceptors and the method for improving its long-time stability |
| CN109060229A (en) * | 2018-06-13 | 2018-12-21 | 中国科学院电子学研究所 | A kind of capacitance pressure transducer, and its manufacturing method |
| CN111044206A (en) * | 2019-11-28 | 2020-04-21 | 北京遥测技术研究所 | MEMS capacitive air pressure sensor based on PN junction electrical isolation and anodic bonding technology |
| CN112897450A (en) * | 2021-01-19 | 2021-06-04 | 北京遥测技术研究所 | MEMS absolute pressure type pressure sensor and processing method thereof |
| CN114314498A (en) * | 2022-03-14 | 2022-04-12 | 南京元感微电子有限公司 | MEMS film vacuum gauge and preparation method thereof |
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Application publication date: 20170419 |