CN106558639B - The LED component and its cutting unit and production method of wafer grade encapsulation - Google Patents
The LED component and its cutting unit and production method of wafer grade encapsulation Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
本发明涉及半导体照明领域，特别是涉及一种晶元级封装的LED器件及其分割单元和制作方法。所述晶元级封装的LED器件，包括含有LED芯片的LED芯片晶元和荧光粉透明基板，所述荧光粉透明基板包括透明基板和透明基板上的荧光粉胶体，所述荧光粉胶体表面与所述LED芯片的出光面结合。所述晶元级封装的LED器件分割而成荧光粉单元的LED器件。所述晶元级封装的LED器件可采用晶元级封装结合LED芯片晶元倒转结构制作。获得的LED器件提高了发光效率、出光的均匀性和可靠性，减少了蓝光侧漏，且制作方法高效快速，降低了生产成本。
The invention relates to the field of semiconductor lighting, in particular to a wafer-level packaged LED device, a dividing unit and a manufacturing method thereof. The wafer-level packaged LED device includes an LED chip wafer containing an LED chip and a phosphor transparent substrate, the phosphor transparent substrate includes a transparent substrate and a phosphor colloid on the transparent substrate, and the phosphor colloid surface is The light emitting surfaces of the LED chips are combined. The LED devices packaged at the wafer level are divided into LED devices of phosphor powder units. The wafer-level packaged LED device can be fabricated by using the wafer-level package combined with the LED chip wafer inversion structure. The obtained LED device improves the luminous efficiency, the uniformity and reliability of light output, reduces the side leakage of blue light, and the production method is efficient and fast, and the production cost is reduced.
Description
Technical field
The present invention relates to field of semiconductor illumination, single more particularly to the LED component and its segmentation of a kind of encapsulation of wafer grade
Member and production method.
Background technique
In recent years, LED (light emitting diode) product illumination is rapidly progressed.LED has the longevity compared with conventional light source
Order long, small in size, energy saving, efficient, fast response time, antidetonation, it is pollution-free the advantages that, it is considered to be general lighting neck can be entered
" green illumination light source " in domain.
As the LED product encapsulation formed a connecting link in LED industry chain, played a key role in entire industrial chain.It is right
For encapsulation, key technology be after all how in limited cost-range extraction chip as much as possible issues
Light, while reducing packaging thermal resistance, improve reliability.In encapsulation process, encapsulating material and packaged type account for it is main influence because
Element.With the continuous development of LED product high photosynthetic efficiency, power, high reliability and low cost, the requirement to encapsulation is also increasingly
Height, one side LED product, which is encapsulated in must satisfy when taking into account light emitting angle, photochromic uniformity etc., takes light with sufficiently high
Efficiency and luminous flux；On the other hand, encapsulation must satisfy the cooling requirements of chip.Therefore, chip, fluorescent powder, substrate, hot interface
The encapsulating materials such as material and corresponding packaged type urgently development innovation, to improve the heat-sinking capability and light efficiency out of LED product
Rate.
Under the fast development of LED product chip technology, the packing forms of LED product product are also from single-chip package mode
Develop to multi-chip package mode.Its encapsulating structure is also encapsulated into SMD encapsulation from Lamp and encapsulates skill to CoB encapsulation and RP again
Art.
The pin of various encapsulation external forms is made in pinned encapsulation (Lamp) using lead frame, is to research and develop successfully to launch at first
LED product encapsulating structure, kind quantity is various, and technical maturity is higher.Surface mount package (SMD) is because reducing product institute
Take up space area, reduce weight, allow by operating current it is big, be especially suitable for automation attachment production, become more advanced
A kind of technique, turn SMD encapsulation from Lamp encapsulation and meet entire electronics industry to develop main trend.But it is deposited in the application at them
The problems such as heat dissipation, uniformity of luminance and luminous efficiency decline.
CoB (ChiponBoard) encapsulating structure is developed on the basis of multi-chip package technology, and CoB encapsulation is
By it is exposed it is chip directly placed be bonded on circuit boards by bonding wire with circuit board, then carry out chip passivation and
Protection.The advantages of CoB is: light is soft, route designs simple, high cost-effectiveness, saves system space etc., but there is cores
The technical issues of piece integrates brightness, colour temperature reconciles and system combination.
Remote fluorescence encapsulation technology (RP) be more blue-ray LED products and fluorescent powder are separated, LED product issue
Blue light is uniformly being incident on phosphor powder layer after the light mixings such as reflector, scatterer, final one kind for issuing equal white light
LED product form of light source.Compared with other encapsulating structures, RP encapsulation technology performance is more outstanding: firstly, being that fluorescent powder is separate
LED product chip, the fluorescent powder not influence vulnerable to PN junction fever, the fluorescent powder of especially some silicates, vulnerable to high temperature height
Wet influence can reduce fluorescent powder thermal quenching probability after far from heat source, extend the service life of light source.Secondly, fluorescent powder is far from core
The structure of piece design is conducive to the taking-up of light, improves light source light-emitting efficiency.Furthermore the light color spatial distribution that this structure issues is equal
Even, colour consistency is high.In recent years, the long-range encapsulation technology of burst of ultraviolel causes the highest attention of people, compares conventional ultra-violet
Light source, possesses unique advantage, including it is low in energy consumption, luminescence response is fast, high reliablity, radiation efficiency are high, the service life is long, to ring
Many advantages, such as border is pollution-free, compact-sized becomes new one of the research hotspot of each major company, the world and research institution.
The numerous scientific research institutions of recent domestic and enterprise persistently conduct a research to LED product encapsulation technology, excellent envelope
Package material and efficient packaging technology are suggested successively, and the LED product illumination new product of high reliability occurs in succession.
Summary of the invention
In view of the innovation of technology, the present invention provides LED component and its cutting unit and the production side of a kind of encapsulation of wafer grade
Method.
Firstly, the present invention provides a kind of LED component of wafer grade encapsulation, comprising:
LED chip wafer containing LED chip, and
Fluorescent powder transparent substrate, the fluorescent powder transparent substrate include the phosphor gel on transparent substrate and transparent substrate
Body,
Wherein, the fluorescent powder colloid surface is in conjunction with the light-emitting surface of the LED chip.
The present invention also provides the LED components for the fluorescent powder unit that the LED component of wafer grade encapsulation is split to form.
In addition the present invention also provides the method for making the LED component of wafer grade encapsulation, including to provide fluorescent powder transparent
Substrate and LED chip wafer, and make the light-emitting surface of LED chip wafer in conjunction with the fluorescent powder colloid on fluorescent powder transparent substrate
Step.
The LED component of wafer grade encapsulation of the present invention, has the advantages that the absorption for reducing growth substrates to light,
The blue light side leakage for reducing light emitting diode after encapsulating, substantially increases the launching efficiency of fluorescent powder, improves light in chip
Light extraction efficiency, uniformity and reliability improve thermal diffusivity and device mechanical strength, to improve the overall performance of device.
The LED component of wafer grade encapsulation of the present invention is suitble to using wafer grade encapsulation technology, and process is simple and efficient, and is obtaining aforementioned superiority
While energy LED component, packaging cost is also reduced.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of transparent substrate of the present invention；
Fig. 2 is the structural schematic diagram of another transparent substrate of the present invention；
Fig. 3 is the structural schematic diagram for the fluorescent powder transparent substrate that Fig. 2 is filled after fluorescent powder colloid；
Fig. 4 is the structural schematic diagram for the fluorescent powder transparent substrate that Fig. 3 light-emitting surface is arranged after micro-structure；
Fig. 5 is the structural schematic diagram of the LED component of wafer grade of the present invention encapsulation；
Fig. 6 is a kind of structural schematic diagram of LED chip amplification of the present invention；
Fig. 7 is the structural schematic diagram of the LED component of fluorescent powder unit of the present invention；
Fig. 8 is a kind of structural schematic diagram of the LED chip wafer of film inverted structure.
Component label instructions:
1 fluorescent powder transparent substrate
101 transparent substrates
102 fluorescent powder colloids
103 grooves
104 micro-structures
2 LED chip wafers
3 LED chips
301 light-emitting surfaces
302 N-type semiconductor conductive layers
303 mqw light emitting layers
304 P-type semiconductor conductive layers
305 p-type ohmic contact layer mirror structures
306 insulating layers
307 side wall reflecting mirrors
308 N-type ohmic contact layers and metal pad
309 p-type metal pads
The LED component of 4 fluorescent powder units
Specific embodiment
Illustrate embodiments of the present invention below by way of particular specific embodiment, those skilled in the art can be by this explanation
Other advantages and efficacy of the present invention can be easily understood for book disclosure of that.The present invention can be without departing from such as claim
Defined by make various modifications or alterations in scope of the invention.
Explanation combines Fig. 1-8 below.It should be noted that diagram provided in the present embodiment only illustrates in a schematic way
Illustrate with component related in the present invention, rather than component count, shape, size, manufacturing method and technique when to actual implementation
Window makes restriction, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its component cloth
Office's kenel may also be increasingly complex.In embodiment related process conditions can rationally be changed in valid window and
Achieve the effect that disclosed.
In the present invention, the LED component of wafer grade encapsulation, including LED chip wafer 2 and fluorescent powder containing LED chip 3
Transparent substrate 1, the fluorescent powder transparent substrate 1 include the fluorescent powder colloid 102 on transparent substrate 101 and transparent substrate, wherein
102 surface of fluorescent powder colloid is combined with the light-emitting surface 301 of the LED chip 3.
Term " in conjunction with " is intended to illustrate the connection between component, as long as being able to achieve the purpose of invention, then it is assumed that such to connect
Connect the scope for belonging to " in conjunction with "；In other words, so long as connection can be realized the function and effect that the connection is intended to reach,
Then belong to the range of " in conjunction with ", for this purpose, not remaking further subdivision, such as no longer investigates whether the connection is physically or chemically
The combination of mode.
Nevertheless, in above-mentioned finished product structure, the preferably permanent combination of chemical mode, for example, by using thermosetting adhesive
Agent or Photocurable adhesive, specifically such as by polyolefin, polyvinyl acetate and vinyl acetate copolymer, polyacrylate or polychlorostyrene
The thermoplastic resins such as ethylene and superchlorinated polyvinyl chloride resin are the adhesive of sizing composition；Further, described adhesive also can be used as glimmering
The colloidal substance substance of binder performance (i.e. with) in light arogel body 102 and exists, i.e., by fluorescent powder colloid 102 with out
Combination is realized in the solidification of smooth surface.And in interim production transfer substrate preferably physics mode or weak bond interim combination,
For example, by using adhesive, for example, beeswax (can be removed slightly heating and in a manner of solvent cleaning) or other can be molten by solvent
The adhesive of solution.
Term " wafer grade " or " encapsulation of wafer grade " refer to that directlying adopt undivided wafer implements encapsulation.
Term " the LED chip wafer containing LED chip " refers to the method conventionally and in detail below enumerated
The LED chip wafer including more than one LED chip (preferably more than two LED chips) obtained.The LED chip root
According to its manufacture craft difference, including its light-emitting surface has exposed and unexposed situation can for example pass through unexposed situation
It removes the mode of growth substrates and exposes light-emitting surface, the light-emitting surface is re-incorporated on fluorescent powder colloid.
In the present invention, the extension production LED chip wafer that LED can be can be used for using any, such as GaN, InP,
GaAs, Ge, BN extension etc., such extension is commercially available, can also voluntarily prepare, for example, by using in directly raw in growth substrate
The method of long extension, or prepare that (when using the method, light-emitting surface is to throw by essence using VGF (vertical gradient solidification) method
The face of light).
In a specific embodiment, the transparent substrate 101 has even curface and/or periodic groove
103, the fluorescent powder colloid 102 is set on 101 even curface of transparent substrate and/or periodically in groove 103.It is preferred that having
There is the transparent substrate 101 of periodic groove 103.
As Figure 1-Figure 5,101 surfacing of transparent substrate of Fig. 1；101 surface of transparent substrate of Fig. 2 has periodically
The groove 103 of arrangement；Fig. 3 is that transparent substrate 101 of the Fig. 2 with groove 103 fills the transparent base of fluorescent powder after fluorescent powder colloid 102
Plate 1, wherein individual groove 103 and fluorescent powder colloid 102 therein form a fluorescent powder unit, the fluorescent powder unit with
It is corresponding with the light-emitting surface 301 of LED chip 3 afterwards to combine；Fig. 4 is on the basis of Fig. 3, and the light-emitting surface 301 of transparent substrate 101 is (i.e. thoroughly
Bright substrate 101 does not set the one side of fluorescent powder colloid 102) it is processed into the fluorescent powder transparent substrate of micro-structure 104 (dentalation)
1；The wafer grade that Fig. 5 is presented by fluorescent powder transparent substrate 1 and multiple LED chips 3 combined thereon encapsulates LED component knot
Structure.
In a specific embodiment, the width and length of the groove 103 of the transparent substrate respectively with groove 103
In fluorescent powder colloid 102 width and length matching, the width and length point of the fluorescent powder colloid 102 in the groove 103
The width and length of the LED chip 3 on fluorescent powder colloid 102 great Yu be integrated to；It is preferred that the phosphor gel in the groove 103
The width of LED chip 3 and length of the width and length of body 102 respectively than being integrated on fluorescent powder colloid 102 are 1-10 microns big.
In a specific embodiment, the thickness of groove 103 depth and fluorescent powder colloid 102 of the transparent substrate
The amount for the fluorescent powder that matching, the thickness of the fluorescent powder colloid 102 and final chromaticity coordinates, that is, LED chip 3 of LED component need
Match；103 depth of groove of preferably clear substrate is 10-100 microns.
In a specific embodiment, the fluorescent powder colloid 102 is the mixture turn of fluorescent powder and organic solvent
Transparent solid made of change.Using and matching for fluorescent powder and organic solvent is carried out according to this field routine techniques.For example, online
" great power LED is glimmering for the Master's thesis of Wu Yiping disclosed in http://d.wanfangdata.com.cn/Thesis/D369178
The research of light powder and colloid packaging technology " documented by fluorescent powder and colloid and relevant preparation method；And/or it is golden from Shenzhen
Hundred bright, Shenzhen core crystalline substance space photoelectricity, the Dalian Road Related product bought such as bright.The example of the organic solvent has: epoxy resin, fluorine
Unpigmented rubber, silica gel etc., preferably silica gel material.Wherein the mixture of fluorescent powder and organic solvent is converted to transparent solid according to ability
Technique known to domain carries out.The fluorescent powder colloid 102 is set on 101 surface of transparent substrate by the modes such as filling, coating
Or in its groove 103,102 surfacing of fluorescent powder colloid, convenient for being combined with LED chip 3.
In a specific embodiment, the transparent substrate 101 is to be suitable for using mechanically or chemically caustic solution pair
The transparent material that its surface is processed；It is preferred that inorganic SiO2Base glass and organic transparent material.In more particular embodiment
In, the SiO2The thickness of base glass is greater than 70 microns.The light-emitting surface of the LED component is the light-emitting surface of transparent substrate 101, thoroughly
The light-emitting surface of bright substrate 101 is processed using the mechanically or chemically modes such as corrosion, forms the micro-structure figure that light-out effect can be improved
Shape (such as structure of dentation or/and pyramid-shaped).
In a specific embodiment, the electrode of the LED chip wafer 2 is ipsilateral structure electrode, the LED core
Piece 3 includes: light-emitting surface 301, N-type semiconductor conductive layer 302, mqw light emitting layer 303, P-type semiconductor conductive layer 304, p-type Europe
Nurse contact layer and mirror structure 305, insulating layer 306, side wall reflecting mirror 307, N-type ohmic contact layer and metal pad 308 and P
Type metal pad 309.Wherein, the ohmic contact layer is the part that electrode pad is contacted with semiconductor conducting layer.For the P
Type ohmic contact layer and mirror structure 305 refer to the mirror layer on the surface P-GAN, both can form ohm with P-GAN
Contact has the function of reflected light again.And the side wall reflecting mirror 307 is set to chip side wall, has reflex to light.
In a specific embodiment, the light-emitting surface of the LED chip wafer 2 is N-type semiconductor growth material, and
N-type semiconductor grown layer has micro-cavity structure.
In a specific embodiment, the LED chip 3 can be the LED chip of GaN base.
In a specific embodiment, 305 material of p-type ohmic contact layer and mirror structure of the LED chip 3
For the combination of one or more of ITO, ZnO, Ni, Ag, Au, Cr, Al；Preferably ITO, Ni and/or Ag.
In a specific embodiment, the light-emitting surface 301 of the LED chip 3 passes through roughening treatment.As shown in fig. 6,
The light-emitting surface 301 of LED chip 3 is the light-emitting surface of roughening.
The present invention also provides the LED components 4 for the fluorescent powder unit that the LED component of wafer grade encapsulation is split to form.
In specific embodiments, the LED component 4 for the fluorescent powder unit being split to form can for containing one or two, three,
LED component after the encapsulation of multiple LED chips such as four, five.As shown in fig. 7, it is a kind of fluorescent powder of structure of the present invention
The LED component 4 of unit.
In addition the present invention also provides the method for making the LED component of wafer grade encapsulation, including to provide fluorescent powder transparent
Substrate 1 and LED chip wafer 2, and the light-emitting surface for making LED chip wafer 2 and the fluorescent powder colloid on fluorescent powder transparent substrate 1
The step of 102 combination.
The method includes LED chip wafers 2 after acquisition, and light-emitting surface has exposed and unexposed situation, for not
Exposed situation is combined with fluorescent powder colloid 102 again after exposure light-emitting surface.Specific such as elaboration below:
In a specific embodiment, it the described method comprises the following steps:
1) fluorescent powder transparent substrate 1 is provided；
2) the LED chip wafer 2 with growth substrates is provided；
3) the LED chip wafer 2 is temporarily bonded on a transfer substrate；
4) growth substrates of the LED chip wafer 2 are removed, exposes the light-emitting surface of LED chip wafer 2, i.e. LED core
The light-emitting surface 301 of piece 3；
5) light-emitting surface 301 of the LED chip is corresponding with the fluorescent powder colloid 102 on fluorescent powder transparent substrate 1, it carries out
It is permanent to combine and solidify；
6) the transfer substrate of 2 interim combination of LED chip wafer is removed, being formed has fluorescent powder cell transparent board structure
The LED component of wafer grade encapsulation.
In the method, from the LED chip wafer 2 with growth substrates to the mistake for the light-emitting surface 301 for obtaining exposing LED chip
Journey can be realized according to existing preparation process especially by the LED chip for forming film inverted structure.Of the invention specific
Embodiment in, the film inverted structure is in 2 preparation process of LED chip wafer, and chip is formed in growth substrates, core
Piece light-emitting surface is contacted with growth substrates, by being temporarily bonded transfer substrate, removing growth substrates etc., can make corresponding light-emitting surface exposure
Out, and then LED component of the invention is obtained.
The material of the transfer substrate be it is those of commonly used in the art, be not particularly limited herein, example has: silicon wafer, glass
Piece, sapphire, copper base etc..The stripping means of the substrate is those of commonly used in the art, such as laser method, chemistry can be used
Etch etc..
In a specific embodiment, for the light-emitting surface 301 and fluorescent powder transparent substrate of LED chip in step 5)
1 permanent combination and solidification (can have binder performance by colloidal substance also uncured in fluorescent powder colloid 102
Substance) it is realized after photocuring and/or heat cure processing with the light-emitting surface 301.
Fig. 8 is a kind of schematic diagram of the LED chip wafer 2 of film inverted structure, has removed growth substrates, has exposed out
Smooth surface, wherein the LED chip 3 in period arrangement can be corresponding with the groove 103 that the 101 upper period of transparent substrate arranges, the LED core
The light-emitting surface 301 of piece 3 corresponding with the fluorescent powder colloid 102 on transparent substrate 101 can then combine.
In a specific embodiment, after step 4) exposes light-emitting surface, also the LED chip can be gone out light
Face 301 carries out roughening treatment, to further increase the light efficiency of LED.The mode of the roughening treatment includes: chemical roughening method, light
Chemical roughening method and laser roughening method.
In a specific embodiment, in step 2) between 5), i.e., LED chip formed to its light-emitting surface 301 with
Before fluorescent powder transparent substrate 1 combines, also side wall reflecting mirror 307 can be made in the side wall of LED chip 3.
In the step 4), the stripping means of the growth substrates of the LED chip wafer 2 has laser lift-off, grinding to throw
Light method, wet etching method/chemical corrosion method, the present invention in preferentially use wet etching method/chemical corrosion method.Specifically implementing
In scheme, the chemical corrosion method can refer to patent application " a kind of method of the method removing growth substrates using chemical attack "
In method carry out, application No. is 201510290140.1, the applying date is on May 29th, 2015).
The present invention also provides a kind of methods of LED component for making fluorescent powder unit, encapsulate in the wafer grade of above-mentioned production
LED component on the basis of, the LED component that the wafer grade of step 6) encapsulates is split, the LED component of fluorescent powder unit is formed
4。
The said goods and product and product and method it is wide in range and preferred feature can be combined with each other.
The LED component of wafer grade encapsulation of the present invention, since its final light-emitting surface is transparent substrate one side, not with tradition
Removing growth substrates are simultaneously compared using it as the LED component (LED component of such as Sapphire Substrate) of light-emitting surface, in light efficiency, heat dissipation etc.
Aspect is all significantly improved；And compared with removing growth substrates expose the LED component directly encapsulated after light-emitting surface, due to transparent base
The presence of plate, is also greatly improved in mechanical strength；Due also to the overall structure of LED component of the present invention, it may be convenient to
It realizes that wafer grade batch encapsulates, improves production efficiency, reduce production cost.
Embodiment
The production of the LED component of wafer grade encapsulation
Step 1: fluorescent powder transparent substrate is provided
The material of the transparent substrate 101 has very high transparency and the mechanically or chemically modes such as corrosion easy to use
It shapes, 80 microns of thickness of SiO is used in the present embodiment2Base glass.The back side of the transparent substrate 101 (is not provided with
The face of fluorescent powder colloid 102, the light-emitting surface of final LED component) it is processed into the micro-structure 104 of dentation, to improve the light efficiency of device.
The transparent substrate 101 includes periodic groove 103 (groove length 14mil, recess width 28mil), groove 103
In have fluorescent powder colloid 102 (30 microns of phosphor gel body thickness), wherein each individually groove 103 and fluorescent powder colloid 102
Form a fluorescent powder unit.Fluorescent powder colloid 102 is fluorescent powder and silica gel, is the complex colloid of weight ratio 1:1.
The width and length of the transparent substrate upper groove 103 will be respectively less times greater than will be integrated to fluorescent powder colloid 102
On LED chip 3 width and length (approximately more than 4 microns)；The depth of the groove 103 is needed according to the final of LED component
Chromaticity coordinates, that is, LED chip 3 need the number of the amount of matched fluorescent powder to determine, make herein be color LED device
Part, about 40 microns of 103 depth of groove.
The period arrangement of the fluorescent powder unit, interval etc. and period of the LED chip 3 in LED chip wafer 2 arrange phase
Identical with, interval, the size of the fluorescent powder unit is slightly more than the size of LED chip 3, to guarantee the light-emitting surface of LED chip 3
301 can be entirely incorporated on fluorescent powder unit.
Step 2: LED chip wafer is provided
Diameter is used to make LED chip wafer 2 for 12mm, thick 5-8 μm of round GaN epitaxy, the LED chip 3 is at least
Including the light-emitting surface 301 by roughening to be bonded in 102 upper surface of fluorescent powder colloid, N-type semiconductor conductive layer 302, quantum
Trap luminescent layer 303, P-type semiconductor conductive layer 304, p-type ohmic contact layer and mirror structure 305, insulating layer 306, N-type ohm
Contact layer and metal pad 308 and p-type metal pad 309.In the present embodiment, the chip wafer is that film inverted structure is brilliant
Member；The p-type ohmic contact layer and mirror structure 305 are ITO, Ni, Ag.
Step 3: prepare as transfer substrate sheet glass, transfer substrate on coating adhesive (be used herein as beeswax, after
It is continuous to be removed with heating).LED chip wafer 2 is pressed together on interim transfer substrate.
Step 4: using laser lift-off to handling at epitaxially grown layer and sapphire interface, peeling off blue treasured
Stone growth substrates, exposure 2 light-emitting surface of LED chip wafer.
Step 5: the light-emitting surface 301 of LED chip being subjected to roughening treatment and (uses KOH or H3PO4It is roughened light-emitting surface, temperature 50
DEG C or more, the time 5 seconds or more.The present embodiment use KOH, 120 DEG C, 2min.All medical fluids for doing light-emitting surface roughening are applicable in
In the present invention.)
And side wall reflecting mirror 307 is made in the side wall of LED chip 3.
Step 6: the light-emitting surface 301 (i.e. the roughening light-emitting surface of LED chip wafer 2) and transparent substrate that LED chip 3 is roughened
The upper surface of fluorescent powder unit on 101 is corresponding, using heated baking, solidifies the silica gel in fluorescent powder colloid 102, realizes out
Smooth surface is permanently bonded and solidifies with substrate, to form the wafer grade encapsulation LED component of fluorescent powder unit substrate structure.
Step 7: the wafer grade of segmentation step 3 encapsulates LED component, forms the LED component 4 of the fluorescent powder unit of needs.
Effective evaluation
1) light transmittance
The light-emitting surface of LED component of the present invention is transparent substrate face, and which obviate the growth substrates of conventional LED devices light-emitting surface
Absorption to light, and the selection of the transparent substrate of high transparency is combined, it is greatly improved the light transmittance of the LED component.With glass
For glass is as transparent substrate, instead of the sapphire (Al where former light-emitting surface2O3) growth substrates, existing tradition sapphire life
The light transmittance (300nm-700nm) of long substrate is less than 80% or so, and the light transmittance (300nm-700nm) of glass substrate is then greater than
90%, therefore, increase light extraction efficiency.
2) blue light side leakage
Traditional chip therefore necessarily has sidewall leakage of the light from chip in the side wall no-mirror of chip, simultaneously because
Growth substrates are not also removed, and therefore, sidelight also includes the side light section of Sapphire Substrate.The present invention has due to the side wall of chip
Reflecting mirror, while Sapphire Substrate has been stripped, and therefore, can obviously reduce the blue light side leakage of light emitting diode after encapsulation.
3) launching efficiency, light extraction efficiency, the uniformity and reliability for going out light
In summary it 1), 2) analyzes, due to using the higher transparent substrate of light transmittance as light-emitting surface, while reducing core
The sidelight of piece, and chip has mirror structure other than light-emitting surface, therefore, light is to more concentrating, the fluorescent powder of unit area
By the excitation of more light, device light extraction efficiency, the out uniformity of light and the overall performance of reliability etc. are improved.
4) heat condition
The present invention reduces the dielectric material of heat transfer, therefore LED due to having peeled off the poor growth substrates of thermal conductivity
The heat dissipation effect of device is more preferable.
5) mechanical strength
LED component of the present invention using transparent substrate structure and LED that LED chip encapsulation is directly carried out with fluorescent powder colloid
Device is compared, and due to overcoming the latter's support substrate, the disadvantages of chip is frangible, mechanical strength is greatly enhanced.
6) luminance test
According to above-described embodiment method, the above envelope is made using the chip wafer that chip size size is 12mil*26mil
Fill device.Using Labsphere 50cm integration sphere light source system, under 60mA, the light efficiency of device reaches 180lm/W or more；Meanwhile it is right
Traditional 12mil*26mil flip-chip is packaged test, and the light efficiency of device is 150lm/W.Therefore traditional die is compared, this
The light efficiency of the LED component of invention improves 20% or more.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (13)
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