CN106548741A - Shift register and time sequence control method thereof - Google Patents
Shift register and time sequence control method thereof Download PDFInfo
- Publication number
- CN106548741A CN106548741A CN201710035699.9A CN201710035699A CN106548741A CN 106548741 A CN106548741 A CN 106548741A CN 201710035699 A CN201710035699 A CN 201710035699A CN 106548741 A CN106548741 A CN 106548741A
- Authority
- CN
- China
- Prior art keywords
- transistor
- signal
- storage unit
- temporary storage
- shift register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000006073 displacement reaction Methods 0.000 claims 29
- 230000007704 transition Effects 0.000 claims 2
- 241000208340 Araliaceae Species 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 30
- 230000000694 effects Effects 0.000 description 9
- 238000000434 field desorption mass spectrometry Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种移位暂存器及其时序控制方法,特别是一种针对应力效应的移位暂存器及其时序控制方法。The invention relates to a shift register and a timing control method thereof, in particular to a shift register aimed at stress effects and a timing control method thereof.
背景技术Background technique
在面板产业的竞争越趋激烈的环境下,各大面板厂商所追求的目标是面板尺寸可以轻薄短小。为了达到面板的窄边框的目的且降低成本,将栅极驱动电路(Gate DriverIC)整合至玻璃基板上,也就是GOA(Gate Driver on Array)的技术已经成为重要的研究方向。就目前实际的电路设计来说,最后面的多个移位暂存器电路需要依靠外部的信号进行下拉的动作。然而,由于现行技术、成本以及空间的考虑下,外部的信号系有所限制。因此,会导致后面的多个移位暂存器电路所受到的应力效应相较于前面的移位暂存器电路来得更加显著,进而使得面板产品的寿命降低。Under the environment of increasingly fierce competition in the panel industry, the goal pursued by major panel manufacturers is to make the panel size light, thin and short. In order to achieve the narrow frame of the panel and reduce the cost, integrating the gate driver IC (Gate Driver IC) on the glass substrate, that is, the technology of GOA (Gate Driver on Array) has become an important research direction. As far as the current actual circuit design is concerned, the last multiple shift register circuits need to rely on external signals to perform the pull-down action. However, due to current technology, cost and space considerations, external signals are limited. Therefore, the stress effect of the subsequent shift register circuits is more significant than that of the front shift register circuits, thereby reducing the lifespan of the panel product.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种移位暂存器及其时序控制方法,可以降低面板的后面多个移位暂存器电路所受的应力效应,以延长面板产品的寿命。The technical problem to be solved by the present invention is to provide a shift register and its timing control method, which can reduce the stress effect on multiple shift register circuits at the back of the panel, so as to prolong the life of panel products.
为了实现上述目的,本发明提供了一种移位暂存器,包含N个第一移位暂存单元,N个第一移位暂存单元相互串接,N为大于1的整数,其中第i级的第一移位暂存单元包含第一上拉电路与第一下拉电路。第一上拉电路依据第i级的第一移位暂存单元的第一控制信号,将第一输出信号调整至第一时脉信号的电位。第一下拉电路依据第i级的第一移位暂存单元的第一控制信号与下拉信号,将第一输出信号与第一控制信号调整至参考电压。其中i为小于等于N的正整数,且第N级的第一移位暂存单元还包含第一箝制电路。第一箝制电路包含第一晶体管与第二晶体管。第一晶体管具有主控端、第一端与第二端。第一晶体管的主控端电性连接外部信号端。第一晶体管的第一端接收第二时脉信号。第二晶体管具有主控端、第一端与第二端。第二晶体管的主控端电性连接第一晶体管的第二端。第二晶体管的第一端电性连接第N级的第一移位暂存单元的第一控制信号。第二晶体管的该第二端接收参考电压。In order to achieve the above object, the present invention provides a shift register, which includes N first shift register units, the N first shift register units are connected in series, and N is an integer greater than 1, wherein the first The first shift register unit of the i stage includes a first pull-up circuit and a first pull-down circuit. The first pull-up circuit adjusts the first output signal to the potential of the first clock signal according to the first control signal of the first shift register unit of the i-th stage. The first pull-down circuit adjusts the first output signal and the first control signal to the reference voltage according to the first control signal and the pull-down signal of the first shift register unit of the i-th stage. Wherein i is a positive integer less than or equal to N, and the first shift register unit of the Nth stage further includes a first clamping circuit. The first clamping circuit includes a first transistor and a second transistor. The first transistor has a main control terminal, a first terminal and a second terminal. The main control end of the first transistor is electrically connected to the external signal end. The first terminal of the first transistor receives the second clock signal. The second transistor has a main control terminal, a first terminal and a second terminal. The main control end of the second transistor is electrically connected to the second end of the first transistor. The first end of the second transistor is electrically connected to the first control signal of the first shift register unit of the Nth stage. The second end of the second transistor receives a reference voltage.
为了更好地实现上述目的,本发明还提供了一种移位暂存器的时序控制方法,包含外部信号于该第N级的第一移位暂存单元的该第一时脉信号的负缘以前由一低电压转换至一高电压。In order to better achieve the above object, the present invention also provides a timing control method of a shift register, including an external signal at the negative of the first clock signal of the first shift register unit of the Nth stage edge before switching from a low voltage to a high voltage.
为了更好地实现上述目的,本发明还提供了一种移位暂存器,包含上拉电路、下拉电路与第一箝制电路。上拉电路依据控制信号,将输出信号调整至第一时脉信号的电位。下拉电路依据控制信号与下拉信号,将输出信号与控制信号调整至参考电压。第一箝制电路包含第一晶体管与第二晶体管。第一晶体管具有主控端、第一端与第二端。第一晶体管的主控端电性连接外部信号端。第一晶体管的第一端接收第二时脉信号。第二晶体管具有主控端、第一端与第二端。第二晶体管的主控端电性连接第一晶体管的第二端。第二晶体管的第一端电性连接控制信号。第二晶体管的第二端接收参考电压。In order to better achieve the above object, the present invention also provides a shift register, including a pull-up circuit, a pull-down circuit and a first clamping circuit. The pull-up circuit adjusts the output signal to the potential of the first clock signal according to the control signal. The pull-down circuit adjusts the output signal and the control signal to the reference voltage according to the control signal and the pull-down signal. The first clamping circuit includes a first transistor and a second transistor. The first transistor has a main control terminal, a first terminal and a second terminal. The main control end of the first transistor is electrically connected to the external signal end. The first terminal of the first transistor receives the second clock signal. The second transistor has a main control terminal, a first terminal and a second terminal. The main control end of the second transistor is electrically connected to the second end of the first transistor. The first end of the second transistor is electrically connected to the control signal. A second terminal of the second transistor receives a reference voltage.
本发明的技术效果在于:Technical effect of the present invention is:
综合以上所述,本发明所提出的移位暂存器及其时序控制方法,通过第一箝制电路的第一晶体管的设置,并搭配时序的控制,使得移位暂存器中的第N级的第一移位暂存单元所受到的应力效应降低。Based on the above, the shift register and its timing control method proposed by the present invention, through the setting of the first transistor of the first clamping circuit, and with timing control, make the Nth stage in the shift register The stress effect suffered by the first shift temporary storage unit is reduced.
还以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。The present invention will also be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
附图说明Description of drawings
图1为依据本发明的一实施例所绘示的移位暂存器的架构图;FIG. 1 is a structural diagram of a shift register according to an embodiment of the present invention;
图2为依据本发明的一实施例所绘示的移位暂存器的方块示意图;FIG. 2 is a schematic block diagram of a shift register according to an embodiment of the present invention;
图3为依据本发明的一实施例所绘示的移位暂存器的方块示意图;FIG. 3 is a schematic block diagram of a shift register according to an embodiment of the present invention;
图4为依据本发明的一实施例所绘示的第一移位暂存单元的电路示意图;FIG. 4 is a schematic circuit diagram of a first shift register unit according to an embodiment of the present invention;
图5为依据本发明的一实施例所绘示的第一移位暂存单元的电路示意图;5 is a schematic circuit diagram of a first shift register unit according to an embodiment of the present invention;
图6为依据本发明的一实施例所绘示的时序控制波形图;FIG. 6 is a timing control waveform diagram according to an embodiment of the present invention;
图7为依据本发明的另一实施例所绘示的第二移位暂存器的电路示意图;7 is a schematic circuit diagram of a second shift register according to another embodiment of the present invention;
图8为依据本发明的另一实施例所绘示的第一移位暂存单元的电路示意图;8 is a schematic circuit diagram of a first shift register unit according to another embodiment of the present invention;
图9为依据本发明的另一实施例所绘示的第二移位暂存单元的电路示意图;9 is a schematic circuit diagram of a second shift register unit according to another embodiment of the present invention;
图10A为依据本发明的另一实施例所绘示的移位暂存器的架构图;FIG. 10A is a structural diagram of a shift register according to another embodiment of the present invention;
图10B为依据本发明的图10A实施例所绘示的第一级至第四级的移位暂存单元的电路示意图;FIG. 10B is a schematic circuit diagram of shift register units from the first stage to the fourth stage shown in the embodiment of FIG. 10A according to the present invention;
图10C为依据本发明的图10A实施例所绘示的第五级至第(n-4)的移位暂存单元的电路示意图;FIG. 10C is a schematic circuit diagram of shift register units from the fifth level to the (n-4)th level shown in the embodiment of FIG. 10A according to the present invention;
图10D为依据本发明的图10A实施例所绘示的第(n-3)级至第n级的移位暂存单元的电路示意图;FIG. 10D is a schematic circuit diagram of shift register units from the (n-3)th level to the nth level shown in the embodiment of FIG. 10A according to the present invention;
图11为依据本发明的一实施例所绘示的外部信号与第一控制信号的时序控制波形图;FIG. 11 is a timing control waveform diagram of an external signal and a first control signal according to an embodiment of the present invention;
图12为依据本发明的一实施例所绘示的部分显示面板的结构示意图。FIG. 12 is a schematic structural diagram of a part of the display panel according to an embodiment of the present invention.
其中,附图标记Among them, reference signs
1、2:移位暂存器1, 2: shift register
1_C:充电结构1_C: charging structure
1_S:电荷分享结构1_S: Charge sharing structure
1_DMC:虚拟充电结构1_DMC: Virtual charging structure
1_FDMS:前段虚拟电荷分享结构1_FDMS: front-end virtual charge sharing structure
1_RDMS:后段虚拟电荷分享结构1_RDMS: back stage virtual charge sharing structure
2_1~2_N:移位暂存单元2_1~2_N: shift temporary storage unit
10-_1~10-_1088:第一移位暂存单元10-_1~10-_1088: the first shift temporary storage unit
12_1~12_1096:第二移位暂存单元12_1~12_1096: The second shift temporary storage unit
20:显示面板20: Display panel
LC1、LC2:下拉信号LC1, LC2: pull-down signal
102:第一上拉电路102: The first pull-up circuit
202:第二上拉电路202: Second pull-up circuit
104:第一下拉电路104: The first pull-down circuit
204:第二下拉电路204: Second pull-down circuit
106、106_1:第一箝制电路106, 106_1: the first clamping circuit
206:第二箝制电路206: Second clamping circuit
306:第三箝制电路306: The third clamping circuit
Q(5)、Qdm(1088)、Qsdm(1095)、Qsdm(1096):第一控制信号Q(5), Qdm(1088), Qsdm(1095), Qsdm(1096): the first control signal
G(5)、Gdm(1088)、Sdm(1095)、Sdm(1096):第一输出信号G(5), Gdm(1088), Sdm(1095), Sdm(1096): the first output signal
HC1~HC8、HC(n-4)、HC(n+4):时脉信号HC1~HC8, HC(n-4), HC(n+4): clock signal
G(9):输出信号G(9): output signal
Q(n):控制信号Q(n): control signal
T11~T64:晶体管T11~T64: Transistors
ST、ST(n-4)、ST(n+4):外部信号ST, ST(n-4), ST(n+4): external signal
S_ST:外部信号端S_ST: external signal terminal
S1~S1080:扫描线S1~S1080: scanning line
VGHD:电压VGHD: Voltage
VSS、VSSQ:参考电压VSS, VSSQ: reference voltage
C-_PE:第一时脉信号的负缘C-_PE: Negative edge of the first clock signal
C-_NE:第一时脉信号的正缘C-_NE: Positive edge of the first clock signal
Q-_PE1~Q-_PE4:第一控制信号的正缘Q-_PE1~Q-_PE4: positive edge of the first control signal
P1:第一时段P1: the first period
P2:第二时段P2: the second period
P3:第三时段P3: the third period
t1:时间点t1: time point
具体实施方式detailed description
下面结合附图对本发明的结构原理和工作原理作具体的描述:Below in conjunction with accompanying drawing, structural principle and working principle of the present invention are specifically described:
请参照图1,图1为依据本发明的一实施例所绘示的移位暂存器的架构图。如图1所示,移位暂存器1包含充电结构1_C与电荷分享结构1_S。于此实施例中,充电结构1_C包含多个第一移位暂存单元10_1~10_1088。电荷分享结构1_S包含多个第二移位暂存单元12_1~12_1096。其中充电结构1_C中的虚拟充电结构1_DMC为包含最后八级的第一移位暂存单元10_1081~10_1088。电荷分享结构1_S中的前段虚拟电荷分享结构1_FDMS为包含最前面八级的第二移位暂存单元12_1~12_8。而后段虚拟电荷分享结构1_RDMS为包含最后八级的第二移位暂存单元12_1089~12_1096。请参照图2,图2为依据本发明的一实施例所绘示的移位暂存器的方块示意图。如图2所示,于充电结构1_C中,移位暂存器1所包含的多个第一移位暂存单元10_1~10_1088彼此之间相互串接。请参照图3,图3为依据本发明的一实施例所绘示的移位暂存器的方块示意图。如图3所示,移位暂存器1所包含的多个第二移位暂存单元12_1~12_1096彼此之间相互串接。于此实施例中,移位暂存器1为一传三及五拉一的结构。举例来说,第一移位暂存单元10_1传送其输出信号G(1)至第一移位暂存单元10_3作为启动信号,而第一移位暂存单元10_5用以控制第一移位暂存单元10_1的输出信号G(1)的下拉。Please refer to FIG. 1 . FIG. 1 is a structural diagram of a shift register according to an embodiment of the present invention. As shown in FIG. 1 , the shift register 1 includes a charging structure 1_C and a charge sharing structure 1_S. In this embodiment, the charging structure 1_C includes a plurality of first shift register units 10_1˜10_1088. The charge sharing structure 1_S includes a plurality of second shift register units 12_1˜12_1096. The virtual charging structure 1_DMC in the charging structure 1_C is the first shift register unit 10_1081˜10_1088 including the last eight stages. The front dummy charge sharing structure 1_FDMS in the charge sharing structure 1_S is the second shift register unit 12_1 - 12_8 including the first eight stages. The second stage of the dummy charge sharing structure 1_RDMS includes the last eight stages of the second shift register units 12_1089˜12_1096. Please refer to FIG. 2 . FIG. 2 is a schematic block diagram of a shift register according to an embodiment of the present invention. As shown in FIG. 2 , in the charging structure 1_C, a plurality of first shift register units 10_1 - 10_1088 included in the shift register 1 are connected in series with each other. Please refer to FIG. 3 . FIG. 3 is a schematic block diagram of a shift register according to an embodiment of the present invention. As shown in FIG. 3 , the plurality of second shift register units 12_1 - 12_1096 included in the shift register 1 are connected in series with each other. In this embodiment, the shift register 1 has a one-to-three and five-to-one structure. For example, the first shift register unit 10_1 transmits its output signal G(1) to the first shift register unit 10_3 as an activation signal, and the first shift register unit 10_5 is used to control the first shift register unit 10_5 The pull-down of the output signal G(1) of the storage unit 10_1.
于一实施例中,移位暂存器1包含充电结构1_C与电荷分享结构1_S。于另一实施例中,移位暂存器1仅包含充电结构1_C。请一并参照图2与图4,图4为依据本发明的一实施例所绘示的第一移位暂存单元的电路示意图,其对应到第5级的第一移位暂存单元10_5。如图4所示,第5级的第一移位暂存单元10_5包含第一上拉电路102与第一下拉电路104。第一上拉电路102依据第5级的第一移位暂存单元的第一控制信号Q(5),将第一输出信号G(5)调整至时脉信号HC5的电位。于一实施例中,当第一控制信号Q(5)为高电位时,晶体管T21会被导通。此时第一输出信号G(5)被调整至时脉信号HC5。In one embodiment, the shift register 1 includes a charging structure 1_C and a charge sharing structure 1_S. In another embodiment, the shift register 1 only includes the charging structure 1_C. Please refer to FIG. 2 and FIG. 4 together. FIG. 4 is a schematic circuit diagram of a first shift register unit according to an embodiment of the present invention, which corresponds to the first shift register unit 10_5 of the fifth stage. . As shown in FIG. 4 , the first shift register unit 10_5 of the fifth stage includes a first pull-up circuit 102 and a first pull-down circuit 104 . The first pull-up circuit 102 adjusts the first output signal G(5) to the potential of the clock signal HC5 according to the first control signal Q(5) of the first shift register unit of the fifth stage. In one embodiment, when the first control signal Q(5) is at a high potential, the transistor T21 is turned on. At this moment, the first output signal G(5) is adjusted to the clock signal HC5.
第一下拉电路104依据第5级的第一移位暂存单元10_5的第一控制信号Q(5)与下拉信号LC1、LC2,将第一输出信号G(5)与第一控制信号Q(5)调整至参考电压VSS。于一实施例中,当下拉信号LC1或是下拉信号LC2其中至少一个的电位为高准位状态时,第一控制信号Q(5)与第一输出信号G(5)的电位会被调整至参考电压VSS。如图4所示,第5级的第一移位暂存单元10_5还包含第一箝制电路106。此第一箝制电路106包含晶体管T41与晶体管T31。晶体管T41的主控端电性连接输出信号G(9),第一端电性连接第一控制信号Q(5),第二端接收参考电压VSS。晶体管T31的主控端电性连接输出信号G(9),第一端电性连接第一输出信号G(5),第二端接收参考电压VSS。第一箝制电路106依据输出信号G(9),将第一输出信号G(5)与第一控制信号Q(5)调整至参考电压VSS。所述的第5级的第一移位暂存单元10_5仅为举例说明,于一实施例中,本发明的移位暂存器1所包含的其他级第一移位暂存单元具有相同的结构。The first pull-down circuit 104 combines the first output signal G(5) with the first control signal Q (5) Adjust to the reference voltage VSS. In one embodiment, when the potential of at least one of the pull-down signal LC1 or the pull-down signal LC2 is at a high level, the potentials of the first control signal Q(5) and the first output signal G(5) are adjusted to Reference voltage VSS. As shown in FIG. 4 , the first shift register unit 10_5 of the fifth stage further includes a first clamping circuit 106 . The first clamping circuit 106 includes a transistor T41 and a transistor T31. The main control terminal of the transistor T41 is electrically connected to the output signal G(9), the first terminal is electrically connected to the first control signal Q(5), and the second terminal receives the reference voltage VSS. The main control end of the transistor T31 is electrically connected to the output signal G(9), the first end is electrically connected to the first output signal G(5), and the second end receives the reference voltage VSS. The first clamping circuit 106 adjusts the first output signal G(5) and the first control signal Q(5) to the reference voltage VSS according to the output signal G(9). The first shift register unit 10_5 of the fifth stage is only for illustration. In one embodiment, the first shift register units of other stages included in the shift register 1 of the present invention have the same structure.
请参照图5,图5为依据本发明的一实施例所绘示的第一移位暂存单元的电路示意图,其对应到图2的架构中第1088级的第一移位暂存单元10_1088。第1088级的第一移位暂存单元10_1088除了具有如同前述第5级的第一移位暂存单元10_5的电路结构之外,其所包含的第一箝制电路106为不同于第1~1087级所包含的第一箝制电路106。如图5所示,第1088级的第一移位暂存单元10_1088中的第一箝制电路106包含晶体管T44与晶体管T41。晶体管T44具有主控端、第一端与第二端。晶体管T44的主控端电性连接外部信号端S_ST。晶体管T44的第一端接收时脉信号HC4。晶体管T41具有主控端、第一端与第二端。晶体管T41的主控端电性连接晶体管T44的第二端。晶体管T41的第一端电性连接第1088级的第一移位暂存单元10_1088的第一控制信号Qdm(1088)。晶体管T41的第二端接收参考电压VSS。于一实施例中,时脉信号HC4为第1084级的第一移位暂存单元10_1084的时脉信号。于一实施例中,晶体管T41的导通阻抗大于晶体管T44的导通阻抗。而于此实施例中,当外部信号端S_ST所提供的外部信号ST为高电位且时脉信号HC4为低电位时,晶体管T41不导通。当外部信号端S_ST所提供的外部信号ST为高电位且时脉信号HC4由低电位转变为高电位时,第一控制信号Qdm(1088)被调整至参考电压VSS。Please refer to FIG. 5 . FIG. 5 is a schematic circuit diagram of a first shift register unit according to an embodiment of the present invention, which corresponds to the first shift register unit 10_1088 of the 1088th stage in the architecture of FIG. 2 . Except that the first shift register unit 10_1088 of the 1088th stage has the same circuit structure as the first shift register unit 10_5 of the fifth stage, the first clamping circuit 106 it includes is different from that of the first to 1087 The first clamping circuit 106 included in the stage. As shown in FIG. 5 , the first clamping circuit 106 in the first shift register unit 10_1088 of the 1088th stage includes a transistor T44 and a transistor T41 . The transistor T44 has a master terminal, a first terminal and a second terminal. The master terminal of the transistor T44 is electrically connected to the external signal terminal S_ST. The first end of the transistor T44 receives the clock signal HC4. The transistor T41 has a main control terminal, a first terminal and a second terminal. The master terminal of the transistor T41 is electrically connected to the second terminal of the transistor T44. The first end of the transistor T41 is electrically connected to the first control signal Qdm (1088) of the first shift register unit 10_1088 of the 1088th stage. The second terminal of the transistor T41 receives the reference voltage VSS. In one embodiment, the clock signal HC4 is the clock signal of the first shift register unit 10_1084 of the 1084th stage. In one embodiment, the on-resistance of the transistor T41 is greater than the on-resistance of the transistor T44. In this embodiment, when the external signal ST provided by the external signal terminal S_ST is at a high potential and the clock signal HC4 is at a low potential, the transistor T41 is not turned on. When the external signal ST provided by the external signal terminal S_ST is high and the clock signal HC4 changes from low to high, the first control signal Qdm ( 1088 ) is adjusted to the reference voltage VSS.
具体来说,请一并参照图5与图6,图6为依据本发明的一实施例所绘示的时序控制波形图。如图5与图6所示,当外部信号ST的为高电位且时脉信号HC4为低电位时,晶体管T41不导通,使得第一控制信号Qdm(1088)于第一阶段P1~第三阶段P3维持高电位。当外部信号ST与时脉信号HC4均为高电位时,此时晶体管T41导通。第一控制信号Qdm(1088)会被拉低至参考电压VSS。如此一来,第一控制信号Qdm(1088)于第三阶段P3的时间变会缩短,如图6所示。也就是说,第1088级的第一移位暂存单元10_1088为搭配时脉信号HC4,于时间点t1将第一控制信号Qdm(1088)的电位拉低至参考电压VSS,此时第一控制信号Qdm(1088)于第三阶段P3的时间大致上缩短(大约为14.4微秒)至与第一阶段P1和第二阶段P2相等,进而降低第1088级的第一移位暂存单元10_1088所受的应力效应。于上述实施例中,移位暂存器1仅包含充电结构1_C,其最后八级的第一移位暂存单元10_1081~10_1088为虚拟的移位暂存单元,而其中,第1088级的第一移位暂存单元10_1088中的第一箝制电路106具有如图5所示的晶体管T44的设置,可用以降低第1088级的第一移位暂存单元10_1088所受的应力效应。而于另一实施例中,移位暂存器1同样仅包含充电结构1_C,但并未具有虚拟的最后八级第一移位暂存单元10_1081~10_1088。也就是说,于此实施例中,移位暂存器1的充电结构1_C仅具有第一移位暂存单元10_1~10_1080,其中,第1080级的第一移位暂存单元10_1080中的第一箝制电路106具有前述图5的晶体管T44的设置,用以降低第1080级的第一移位暂存单元10_1080所受的应力效应。Specifically, please refer to FIG. 5 and FIG. 6 together. FIG. 6 is a timing control waveform diagram according to an embodiment of the present invention. As shown in Figure 5 and Figure 6, when the external signal ST is at a high potential and the clock signal HC4 is at a low potential, the transistor T41 is not turned on, so that the first control signal Qdm (1088) is in the first phase P1 to the third Phase P3 maintains a high potential. When both the external signal ST and the clock signal HC4 are at a high potential, the transistor T41 is turned on. The first control signal Qdm (1088) is pulled down to the reference voltage VSS. In this way, the time of the first control signal Qdm (1088) in the third phase P3 is shortened, as shown in FIG. 6 . That is to say, the first shift register unit 10_1088 of the 1088th stage cooperates with the clock signal HC4 and pulls down the potential of the first control signal Qdm (1088) to the reference voltage VSS at the time point t1. At this time, the first control The time of the signal Qdm (1088) in the third stage P3 is roughly shortened (approximately 14.4 microseconds) to be equal to the first stage P1 and the second stage P2, thereby reducing the time required by the first shift register unit 10_1088 of the 1088th stage The stress effect received. In the above embodiment, the shift register 1 only includes the charging structure 1_C, and the first shift register units 10_1081-10_1088 of the last eight stages are virtual shift register units, and the first shift register units of the 1088th stage The first clamping circuit 106 in a shift register unit 10_1088 has the arrangement of the transistor T44 as shown in FIG. 5 , which can be used to reduce the stress effect on the first shift register unit 10_1088 of the 1088th stage. In another embodiment, the shift register 1 also only includes the charging structure 1_C, but does not have the virtual last eight first shift register units 10_1081˜10_1088. That is to say, in this embodiment, the charging structure 1_C of the shift register 1 has only the first shift register units 10_1˜10_1080, wherein the first shift register unit 10_1080 of the 1080th stage A clamping circuit 106 is configured with the transistor T44 of FIG. 5 to reduce the stress effect on the first shift register unit 10_1080 of the 1080th stage.
于一实施例中,移位暂存器1的第一箝制电路106还包含晶体管T31,其具有主控端、第一端与第二端。晶体管T31的主控端电性连接晶体管T44的第二端,晶体管T31的第一端电性连接第一输出信号Gdm(1088)。晶体管T31的第二端接收参考电压VSS。于实务上,由于第一控制信号Qdm(1088)于第二阶段P2与第三阶段P3中,借由电容耦合来维持高电位。于一个实际的例子中,第一控制信号Qdm(1088)于第二阶段P2与第三阶段P3漏电的速度快,导致第1088级的第一移位暂存单元10_1088的第一输出信号Gdm(1088)的电位下拉的程度不足。此时,借由晶体管T31的设置,可以辅助性地下拉第一输出信号Gdm(1088)的电位。In one embodiment, the first clamping circuit 106 of the shift register 1 further includes a transistor T31 having a master control terminal, a first terminal and a second terminal. The master terminal of the transistor T31 is electrically connected to the second terminal of the transistor T44, and the first terminal of the transistor T31 is electrically connected to the first output signal Gdm (1088). The second terminal of the transistor T31 receives the reference voltage VSS. In practice, since the first control signal Qdm (1088) maintains a high potential through capacitive coupling in the second phase P2 and the third phase P3. In a practical example, the leakage speed of the first control signal Qdm(1088) in the second phase P2 and the third phase P3 is fast, resulting in the first output signal Gdm( 1088) is not sufficiently pulled down. At this time, the potential of the first output signal Gdm ( 1088 ) can be auxiliary pulled down by the setting of the transistor T31 .
于一实施例中,移位暂存器1包含充电结构1_C与电荷分享结构1_S。于实务上,面板内的像素可分为主像素与次像素,而由于电荷分享结构1_S具有前段虚拟电荷分享结构1_FDMS,其包含最前面八级的第二移位暂存单元12_1~12_8,因此在时序上会延迟,进而使得次像素的电位可以被错开。而于此实施例中,在充电结构1_C中的第1088级的第一移位暂存单元10_1088为如同图5的电路架构。而于电荷分享结构1_S中,移位暂存器1所包含的第1096级的第二移位暂存单元12_1096接收来自外部信号端S_ST的外部信号。请参照图7,图7为依据本发明的另一实施例所绘示的第二移位暂存器的电路示意图,其对应图3的第1096级的第二移位暂存单元12_1096。如图7所示,第1096级的第二移位暂存单元12_1096包含第二上拉电路202与第二下拉电路204。第二上拉电路202依据第1096级的第二移位暂存单元12_1096的第一控制信号Qsdm(1096),将第二输出信号Sdm(1096)调整至时脉信号HC8的电位。第二下拉电路204依据第1096级的第二移位暂存单元12_1096的第一控制信号Qsdm(1096)与下拉信号LC1、LC2,将第二输出信号Sdm(1096)与第一控制信号Qsdm(1096)调整至参考电压VSS。第1096级的第二移位暂存单元12-_1096包含第二箝制电路206。第二箝制电路206包含晶体管T41与晶体管T44。晶体管T44具有主控端、第一端与第二端。晶体管T44的主控端电性连接外部信号端S_ST。晶体管T44的第一端接收时脉信号HC4。晶体管T41具有主控端、第一端与第二端。晶体管T41的主控端电性连接晶体管T44的第二端。晶体管T41的第一端电性连接第1096级的第二移位暂存单元12_1096的第一控制信号Qsdm(1096)。晶体管T41的第二端接收参考电压VSS。In one embodiment, the shift register 1 includes a charging structure 1_C and a charge sharing structure 1_S. In practice, the pixels in the panel can be divided into main pixels and sub-pixels, and since the charge-sharing structure 1_S has the front-stage dummy charge-sharing structure 1_FDMS, which includes the first eight stages of second shift register units 12_1-12_8, therefore The timing is delayed, so that the potentials of the sub-pixels can be staggered. In this embodiment, the first shift register unit 10_1088 of the 1088th stage in the charging structure 1_C has a circuit structure similar to that shown in FIG. 5 . In the charge sharing structure 1_S, the second shift register unit 12_1096 of the 1096th stage included in the shift register 1 receives an external signal from the external signal terminal S_ST. Please refer to FIG. 7 . FIG. 7 is a schematic circuit diagram of a second shift register according to another embodiment of the present invention, which corresponds to the second shift register unit 12_1096 of level 1096 in FIG. 3 . As shown in FIG. 7 , the second shift register unit 12_1096 of the 1096th stage includes a second pull-up circuit 202 and a second pull-down circuit 204 . The second pull-up circuit 202 adjusts the second output signal Sdm (1096) to the potential of the clock signal HC8 according to the first control signal Qsdm (1096) of the second shift register unit 12_1096 of the 1096th stage. The second pull-down circuit 204 converts the second output signal Sdm(1096) to the first control signal Qsdm( 1096) to adjust to the reference voltage VSS. The second shift register unit 12-_1096 of the 1096th stage includes a second clamping circuit 206 . The second clamping circuit 206 includes a transistor T41 and a transistor T44. The transistor T44 has a master terminal, a first terminal and a second terminal. The master terminal of the transistor T44 is electrically connected to the external signal terminal S_ST. The first end of the transistor T44 receives the clock signal HC4. The transistor T41 has a main control terminal, a first terminal and a second terminal. The master terminal of the transistor T41 is electrically connected to the second terminal of the transistor T44. The first end of the transistor T41 is electrically connected to the first control signal Qsdm (1096) of the second shift register unit 12_1096 of the 1096th stage. The second terminal of the transistor T41 receives the reference voltage VSS.
于另一实施例中,请参照图8,图8为依据本发明的另一实施例所绘示的第一移位暂存单元的电路示意图,其对应图2的第1088级的第一移位暂存单元10_1088。如图8所示,第1088级的第一移位暂存单元10_1088包含第二上拉电路202、第二下拉电路204以及第二箝制电路206。晶体管T41的主控端电性连接第1092级的第二移位暂存单元10_1092的输出信号端S_Sdm(1092),晶体管T41的第一端电性连接第1088级的第一移位暂存单元10_1088的第一控制信号Qdm(1088)。晶体管T41的第二端接收VSS参考电压。图8与图5的实施例大致上具有相同电路结构,而不同的是图8实施例中的第二箝制电路包含仅有一个晶体管,也就是晶体管T41。In another embodiment, please refer to FIG. 8 . FIG. 8 is a schematic circuit diagram of a first shift register unit according to another embodiment of the present invention, which corresponds to the first shift of the 1088th stage in FIG. 2 . Bit temporary storage unit 10_1088. As shown in FIG. 8 , the first shift register unit 10_1088 of the 1088th stage includes a second pull-up circuit 202 , a second pull-down circuit 204 and a second clamping circuit 206 . The main control terminal of the transistor T41 is electrically connected to the output signal terminal S_Sdm (1092) of the second shift register unit 10_1092 of the 1092nd stage, and the first end of the transistor T41 is electrically connected to the first shift register unit of the 1088th stage 10_1088 of the first control signal Qdm (1088). The second terminal of the transistor T41 receives the VSS reference voltage. FIG. 8 has substantially the same circuit structure as the embodiment of FIG. 5 , but the difference is that the second clamping circuit in the embodiment of FIG. 8 includes only one transistor, that is, the transistor T41 .
请一并参照图1、图7与图8,于此实施例中,移位暂存器1为包含充电结构1_C与电荷分享结构1_S。其中,第1096级的第二移位暂存单元12_1096接收来自外部信号端S_ST的外部信号ST,第1088级的第一移位暂存单元10_1088未接收来自该外部信号端S_ST的外部信号ST。具体来说,相较于多个第一移位暂存单元10_1~10_1088,由于多个第二移位暂存单元12_1~12_1096多了八级的移位暂存单元,也就是第一移位暂存单元12_1089~12_1096。因此,在此实施例中,第1088级的第一移位暂存单元10_1088不需要如同图5的实施例,额外设置一个接收外部信号ST的晶体管(图5的晶体管T44),以进行第一控制信号Qdm(1088)电位的下拉。于实务上,于此例子中,第一控制信号Qdm(1088)电位可以通过第1092级的第二移位暂存单元12_1092来进行下拉。Please refer to FIG. 1 , FIG. 7 and FIG. 8 together. In this embodiment, the shift register 1 includes a charging structure 1_C and a charge sharing structure 1_S. Wherein, the second shift register unit 12_1096 of the 1096th stage receives the external signal ST from the external signal terminal S_ST, and the first shift register unit 10_1088 of the 1088th stage does not receive the external signal ST from the external signal terminal S_ST. Specifically, compared with the plurality of first shift register units 10_1˜10_1088, since the plurality of second shift register units 12_1˜12_1096 have eight more levels of shift register units, that is, the first shift register units Temporary storage units 12_1089~12_1096. Therefore, in this embodiment, the first shift register unit 10_1088 of the 1088th stage does not need to set an additional transistor (transistor T44 in FIG. 5 ) for receiving the external signal ST as in the embodiment of FIG. Control signal Qdm (1088) pull-down potential. In practice, in this example, the potential of the first control signal Qdm ( 1088 ) can be pulled down by the second shift register unit 12_1092 of the 1092nd stage.
请参照图9,图9为依据本发明的另一实施例所绘示的第二移位暂存单元的电路示意图,其对应图1的移位暂存器1所包含的第1095级的第二移位暂存单元12_1095。于此实施例中,第1095级的第二移位暂存单元12_1095包含第三箝制电路306,第三箝制电路306包含晶体管T44与晶体管T41,具有主控端、第一端与第二端。晶体管T44的主控端电性连接外部信号端S_ST,晶体管T44的第一端接收时脉信号HC3。晶体管T41具有主控端、第一端与第二端。晶体管T41的主控端电性连接晶体管T44的第二端。晶体管T41的第一端电性连接第1095级的第二移位暂存单元12_1095的第一控制信号Qsdm(1095)。晶体管T41的第二端接收参考电压VSS。第1095级的第二移位暂存单元12_1095的运作方式与前述第1096级的第二移位暂存单元12_1096相同,于此不再赘述。而于一实施例中,多个第二移位暂存单元12_1093~12_1096均具有图9实施例的电路架构。Please refer to FIG. 9 . FIG. 9 is a schematic circuit diagram of a second shift register unit according to another embodiment of the present invention, which corresponds to the 1095th stage included in the shift register 1 of FIG. 1 Two shift temporary storage unit 12_1095. In this embodiment, the second shift register unit 12_1095 of the 1095th stage includes a third clamping circuit 306, and the third clamping circuit 306 includes a transistor T44 and a transistor T41, and has a master control terminal, a first terminal and a second terminal. The main control terminal of the transistor T44 is electrically connected to the external signal terminal S_ST, and the first terminal of the transistor T44 receives the clock signal HC3. The transistor T41 has a main control terminal, a first terminal and a second terminal. The master terminal of the transistor T41 is electrically connected to the second terminal of the transistor T44. The first end of the transistor T41 is electrically connected to the first control signal Qsdm (1095) of the second shift register unit 12_1095 of the 1095th stage. The second terminal of the transistor T41 receives the reference voltage VSS. The operation mode of the second shift register unit 12_1095 at the 1095th stage is the same as that of the second shift register unit 12_1096 at the 1096th stage, and will not be repeated here. In one embodiment, the plurality of second shift register units 12_1093 - 12_1096 all have the circuit structure of the embodiment in FIG. 9 .
请参照图10A,图10A为依据本发明的另一实施例所绘示的移位暂存器的架构图。如图10A所示,移位暂存器2具有n个移位暂存单元,包含第一级至第四级的移位暂存单元2_1~2_4,第五级至第(n-4)级的移位暂存单元2_5~2_(n-4),第(n-3)级至第n级的移位暂存单元2_(n-3)~2_n。请一并参照图10B~10D。图10B依据本发明的图10A实施例所绘示的第一级至第四级的移位暂存单元的电路示意图。图10C依据本发明的图10A实施例所绘示的第五级至第(n-4)的移位暂存单元的电路示意图。图10D依据本发明的图10A实施例所绘示的第(n-3)级至第n级的移位暂存单元的电路示意图。如图10B~图10D所示,移位暂存器2所具有的移位暂存单元大致上与前述的第一移位暂存单元与第二移位暂存单元具有类似的结构,其主要不同之处在于,图10B~图10D均具有晶体管T11,其第一端电性连接控制信号Q(n),第二端接收电压VGHD。于图10C与图10D中,晶体管T11的主控端接收外部信号ST(n-4),而于图10B中,还包含晶体管T14,其第一端电性连接晶体管T11的主控端,第二端电性连接接收时脉信号HC(n-4),主控端接收外部信号ST。其中,针对第一箝制电路106_1,图10D为具有晶体管T44,其主控端接收外部信号ST,第一端电性连接晶体管T41的主控端,第二端接收时脉信号HC(n+4),晶体管T41的第一端接收参考电压VSSQ,第二端电性连接控制信号Q(n)。Please refer to FIG. 10A , which is a structural diagram of a shift register according to another embodiment of the present invention. As shown in FIG. 10A, the shift register 2 has n shift register units, including shift register units 2_1 to 2_4 from the first stage to the fourth stage, and the shift register units 2_1 to 2_4 from the fifth stage to the (n-4)th stage shift register units 2_5-2_(n-4), and shift register units 2_(n-3)-2_n of the (n-3)th to n-th stages. Please refer to FIGS. 10B to 10D together. FIG. 10B is a schematic circuit diagram of shift register units from the first stage to the fourth stage according to the embodiment shown in FIG. 10A of the present invention. FIG. 10C is a schematic circuit diagram of shift register units from the fifth level to the (n−4)th level shown in the embodiment of FIG. 10A according to the present invention. FIG. 10D is a schematic circuit diagram of shift register units from the (n−3)th level to the nth level according to the embodiment shown in FIG. 10A of the present invention. As shown in Figures 10B to 10D, the shift register unit of the shift register 2 has a structure similar to that of the aforementioned first shift register unit and second shift register unit. The difference is that FIGS. 10B-10D all have a transistor T11, the first end of which is electrically connected to the control signal Q(n), and the second end receives the voltage VGHD. In FIG. 10C and FIG. 10D, the main control end of the transistor T11 receives the external signal ST(n-4), and in FIG. The two terminals are electrically connected to receive the clock signal HC(n-4), and the master terminal receives the external signal ST. Among them, for the first clamping circuit 106_1, FIG. 10D has a transistor T44, the main control terminal of which receives the external signal ST, the first terminal is electrically connected to the main control terminal of the transistor T41, and the second terminal receives the clock signal HC(n+4 ), the first end of the transistor T41 receives the reference voltage VSSQ, and the second end is electrically connected to the control signal Q(n).
而图10B与图10C仅有晶体管T41,其第一端同样为接收参考电压VSS,第二端电性连接控制信号Q(n)。于前述的实施例不同的是,于此实施例中,基于上述的电路架构,移位暂存器2可以具有正反扫描的能力。以一个例子来说,当进行正扫描的时候,电压VGHD为30伏特,而参考电压VSSQ为负12伏特,且依序提供时脉信号HC1至时脉信号HC8,使移位暂存器2由第一级的移位暂存单元2_1往最后一级的移位暂存单元2_n依序致能。之,当进行反扫描的时候,电压VGHD为负12伏特,而参考电压VSSQ为30伏特,且依序提供时脉信号HC8至时脉信号HC1,使移位暂存器2反过来由最后一级的移位暂存单元2_n往第一级的移位暂存单元2_1依序致能。换句话说,当进行正反扫描时,传递时脉信号HC1至时脉信号HC8的顺序相反,且电压VGHD与参考电压VSSQ也会相互交换,以达到正反扫描的功能。However, FIG. 10B and FIG. 10C only have the transistor T41, the first end of which also receives the reference voltage VSS, and the second end is electrically connected to the control signal Q(n). Different from the above-mentioned embodiments, in this embodiment, based on the above-mentioned circuit structure, the shift register 2 can have the capability of forward and reverse scanning. As an example, when performing a positive scan, the voltage VGHD is 30 volts, and the reference voltage VSSQ is negative 12 volts, and the clock signal HC1 to the clock signal HC8 are provided sequentially, so that the shift register 2 is The shift register unit 2_1 of the first stage is enabled sequentially to the shift register unit 2_n of the last stage. That is, when reverse scanning is performed, the voltage VGHD is negative 12 volts, and the reference voltage VSSQ is 30 volts, and the clock signal HC8 to the clock signal HC1 are provided sequentially, so that the shift register 2 is reversed by the last one. The shift register unit 2_n of the stage is enabled sequentially to the shift register unit 2_1 of the first stage. In other words, when performing forward and reverse scanning, the order of transmitting the clock signal HC1 to the clock signal HC8 is reversed, and the voltage VGHD and the reference voltage VSSQ are also exchanged to achieve the function of forward and reverse scanning.
请参照图11,图11为依据本发明的一实施例所绘示的外部信号与第一控制信号的时序控制波形图,其适用于移位暂存器1。如图11所示,于一实施例中,外部信号ST于第1088级的第一移位暂存单元10_1088的时脉信号HC8的负缘C-_NE以前由低电压转换至高电压。于一实施例中,外部信号ST于第1088级的第一移位暂存单元10_1088的时脉信号HC8的正缘C-_PE以前由低电压转换至高电压。于另一实施例中,外部信号ST于第1088级的第一移位暂存单元10_1088的第一控制信号Qdm(1088)的正缘Q-_PE1以前由低电压转换至该高电压。于另一个例子中,外部信号ST于多个第一移位暂存单元10_1085~10-_1087的第一控制信号Qdm(1085)~Qdm(1087)的正缘Q-_PE2~Q-_PE4之前由低电压转换至高电压。Please refer to FIG. 11 . FIG. 11 is a timing control waveform diagram of an external signal and a first control signal according to an embodiment of the present invention, which is applicable to the shift register 1 . As shown in FIG. 11 , in one embodiment, the external signal ST is switched from a low voltage to a high voltage before the negative edge C−_NE of the clock signal HC8 of the first shift register unit 10_1088 of the 1088th stage. In one embodiment, the external signal ST is switched from a low voltage to a high voltage before the positive edge C−_PE of the clock signal HC8 of the first shift register unit 10_1088 of the 1088th stage. In another embodiment, the external signal ST is switched from a low voltage to the high voltage before the positive edge Q-_PE1 of the first control signal Qdm (1088 ) of the first shift register unit 10_1088 of the 1088th stage. In another example, the external signal ST is generated by Low voltage to high voltage conversion.
请参照图12,图12为依据本发明的一实施例所绘示的部分显示面板的结构示意图。于此实施例中,移位暂存器1所包含的充电结构1_C中,并不具有虚拟充电结构1_DMC。其中,如图12所示,显示面板20具有1080条扫描线S1~S1080,充电结构1_C所包含的1080个第一移位暂存器1-0_1~10-_1080一一对应地连接至扫描线S1~S1080。Please refer to FIG. 12 . FIG. 12 is a schematic structural diagram of a part of the display panel according to an embodiment of the present invention. In this embodiment, the charging structure 1_C included in the shift register 1 does not have the dummy charging structure 1_DMC. Wherein, as shown in FIG. 12 , the display panel 20 has 1080 scan lines S1-S1080, and the 1080 first shift registers 1-0_1-10-_1080 included in the charging structure 1_C are connected to the scan lines in one-to-one correspondence. S1~S1080.
综合以上所述,本发明所揭露的移位暂存器,为通过第一移位暂存单元中第一箝制电路的第一晶体管接收外部信号,且搭配时序的控制,使得第一控制信号于第三阶段的时间可以缩短,进而降低第一移位暂存单元所受到的应力效应。Based on the above, the shift register disclosed in the present invention receives an external signal through the first transistor of the first clamping circuit in the first shift register unit, and is matched with timing control so that the first control signal is The time of the third stage can be shortened, thereby reducing the stress effect on the first shift temporary storage unit.
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should belong to the scope of protection of the appended claims of the present invention.
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105139134 | 2016-11-28 | ||
TW105139134A TWI602168B (en) | 2016-11-28 | 2016-11-28 | Shift register and timimg control method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106548741A true CN106548741A (en) | 2017-03-29 |
CN106548741B CN106548741B (en) | 2019-06-14 |
Family
ID=58398798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710035699.9A Expired - Fee Related CN106548741B (en) | 2016-11-28 | 2017-01-17 | Shift register and time sequence control method thereof |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN106548741B (en) |
TW (1) | TWI602168B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI690932B (en) * | 2019-09-05 | 2020-04-11 | 友達光電股份有限公司 | Shift register |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090304138A1 (en) * | 2008-06-06 | 2009-12-10 | Au Optronics Corp. | Shift register and shift register unit for diminishing clock coupling effect |
CN101937718A (en) * | 2010-08-04 | 2011-01-05 | 友达光电股份有限公司 | bidirectional shift register |
CN102945660A (en) * | 2012-09-14 | 2013-02-27 | 友达光电股份有限公司 | Display device and grid signal generation method thereof |
CN103559867A (en) * | 2013-10-12 | 2014-02-05 | 深圳市华星光电技术有限公司 | Grid drive circuit and array substrate and display panel thereof |
CN104376874A (en) * | 2014-09-10 | 2015-02-25 | 友达光电股份有限公司 | Shift register |
US20160293094A1 (en) * | 2015-03-30 | 2016-10-06 | Samsung Display Co., Ltd. | Gate driving circuit and display device including the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8054935B2 (en) * | 2009-11-13 | 2011-11-08 | Au Optronics Corporation | Shift register with low power consumption |
TWI406503B (en) * | 2010-12-30 | 2013-08-21 | Au Optronics Corp | Shift register circuit |
TWI576738B (en) * | 2015-11-04 | 2017-04-01 | 友達光電股份有限公司 | Shift register |
TWI562041B (en) * | 2015-11-06 | 2016-12-11 | Au Optronics Corp | Shift register circuit |
-
2016
- 2016-11-28 TW TW105139134A patent/TWI602168B/en not_active IP Right Cessation
-
2017
- 2017-01-17 CN CN201710035699.9A patent/CN106548741B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090304138A1 (en) * | 2008-06-06 | 2009-12-10 | Au Optronics Corp. | Shift register and shift register unit for diminishing clock coupling effect |
CN101937718A (en) * | 2010-08-04 | 2011-01-05 | 友达光电股份有限公司 | bidirectional shift register |
CN102945660A (en) * | 2012-09-14 | 2013-02-27 | 友达光电股份有限公司 | Display device and grid signal generation method thereof |
CN103559867A (en) * | 2013-10-12 | 2014-02-05 | 深圳市华星光电技术有限公司 | Grid drive circuit and array substrate and display panel thereof |
CN104376874A (en) * | 2014-09-10 | 2015-02-25 | 友达光电股份有限公司 | Shift register |
US20160293094A1 (en) * | 2015-03-30 | 2016-10-06 | Samsung Display Co., Ltd. | Gate driving circuit and display device including the same |
Also Published As
Publication number | Publication date |
---|---|
TWI602168B (en) | 2017-10-11 |
TW201820300A (en) | 2018-06-01 |
CN106548741B (en) | 2019-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10803823B2 (en) | Shift register unit, gate driving circuit, and driving method | |
US10930360B2 (en) | Shift register, driving method thereof, gate driving circuit, and display device | |
KR101718272B1 (en) | Gate driver, display device and gate driving method | |
KR102003439B1 (en) | Gate shift register and display device using the same | |
US8686990B2 (en) | Scanning signal line drive circuit and display device equipped with same | |
US10204545B2 (en) | Gate driver and display device including the same | |
KR101679855B1 (en) | Gate shift register and display device using the same | |
WO2017113438A1 (en) | Gate driver on array circuit and display using gate driver on array circuit | |
TWI493522B (en) | Shift register circuit | |
CN103514840B (en) | Integrated gate drive circuit and LCD panel | |
KR102266207B1 (en) | Gate shift register and flat panel display using the same | |
CN105679225B (en) | Method of driving display panel and display device implementing the method | |
KR102056674B1 (en) | Gate shift register and method for driving the same | |
CN106297625B (en) | Gate driving circuit and the display device for using the gate driving circuit | |
CN104637430B (en) | Gate driving circuit and display device | |
US10332471B2 (en) | Pulse generation device, array substrate, display device, drive circuit and driving method | |
CN104505013A (en) | Driving circuit | |
CN105047154A (en) | Driving compensating circuit, liquid crystal display device with driving compensating circuit and driving method | |
EP3882901B1 (en) | Shift register unit, drive method, gate drive circuit, and display device | |
CN102903321A (en) | Display device and shift buffer circuit thereof | |
CN101540148B (en) | Driving device for liquid crystal display and related output enabling signal conversion device | |
TWI407401B (en) | Level shifter, method for generating clock-pulse output signal and corresponding flat display | |
CN106548741A (en) | Shift register and time sequence control method thereof | |
CN105070244B (en) | Drive circuit and its driving method, touch-control display panel and touch control display apparatus | |
US20140232964A1 (en) | Integrated gate driver circuit and liquid crystal panel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190614 Termination date: 20210117 |