CN106531904A - OLED display device package and packaging method - Google Patents
OLED display device package and packaging method Download PDFInfo
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- CN106531904A CN106531904A CN201611044674.7A CN201611044674A CN106531904A CN 106531904 A CN106531904 A CN 106531904A CN 201611044674 A CN201611044674 A CN 201611044674A CN 106531904 A CN106531904 A CN 106531904A
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- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 68
- 239000010409 thin film Substances 0.000 claims abstract description 287
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000005468 ion implantation Methods 0.000 claims abstract description 55
- 230000004888 barrier function Effects 0.000 claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 150
- 229920005570 flexible polymer Polymers 0.000 claims description 38
- 150000002500 ions Chemical class 0.000 claims description 36
- 239000000853 adhesive Substances 0.000 claims description 30
- 230000001070 adhesive effect Effects 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 27
- 238000005538 encapsulation Methods 0.000 claims description 26
- 239000003292 glue Substances 0.000 claims description 26
- 230000000903 blocking effect Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 18
- 239000001301 oxygen Substances 0.000 abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 419
- 229920000642 polymer Polymers 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 3
- -1 Polyethylene terephthalate Polymers 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- JNBXWZGMEVQJTH-UHFFFAOYSA-N n,n-diphenylaniline;3-methyl-n-phenylaniline Chemical compound CC1=CC=CC(NC=2C=CC=CC=2)=C1.C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 JNBXWZGMEVQJTH-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an OLED display device package and packaging method, and belongs to the technical field of display. The method includes manufacturing a barrier layer on a substrate; and after manufacturing an OLED device on the barrier layer, manufacturing a thin film packaging layer on the OLED device, wherein the thin film packaging layer is one whose surface is subjected to ion implantation technology treatment and covers the LED device and barrier layer, and the OLED device is located in a middle part of the barrier layer. The barrier layer is manufactured on the substrate, and the thin film packaging layer modified through the ion implantation technology is manufactured on the OLED device, thereby avoiding the problem that water and oxygen cause corrosion to the OLED device. The package provided by the invention is particularly suitable for packaging a flexible OLED display device.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to an Organic Light-Emitting Diode (OLED) display device package and a package method thereof.
Background
The OLED display device is a display technology which utilizes organic semiconductor materials to emit light under the action of an electric field, and is a novel pure solid display technology.
The OLED display device has the advantages of self-luminescence (no need of a backlight source), simple structure, ultra-lightness and thinness, high response speed, wide viewing angle, low power consumption, capability of realizing flexible display and the like, and is widely applied to small electronic equipment. But large-size OLED display devices are still slow to popularize due to immature packaging technology and the like.
At present, the mainstream OLED display device is packaged by overlapping a plurality of thin films of an organic thin film and an inorganic thin film, but the water and oxygen resistance of the OLED package can not completely meet the requirement of a large-size OLED display device, so that the service life of the OLED display device is shortened due to water and oxygen corrosion.
Disclosure of Invention
In order to solve the problem that the water and oxygen resistance of OLED packaging in the prior art cannot completely meet the requirements of a large-size OLED display device, the embodiment of the invention provides an OLED display device packaging method. The technical scheme is as follows:
in a first aspect, an embodiment of the present invention provides an OLED display device encapsulation method, where the method includes:
manufacturing a barrier layer on a substrate;
after the OLED device is manufactured on the blocking layer, a thin film packaging layer is manufactured on the OLED device, the surface of the thin film packaging layer is processed through an ion implantation process, the thin film packaging layer covers the OLED device and the blocking layer, and the OLED device is located in the middle of the blocking layer.
In an implementation manner of the embodiment of the present invention, the fabricating a barrier layer on a substrate includes: manufacturing an organic thin film layer, an inorganic thin film layer or an organic-inorganic mixed thin film layer on the substrate; or,
the manufacturing of the barrier layer on the substrate comprises the following steps: manufacturing at least one thin film packaging structure on the substrate; each thin film packaging structure comprises a first thin film layer, a second thin film layer and a third thin film layer which are stacked; or each film packaging sublayer comprises a first film layer and a flexible polymer film layer with adhesive glue arranged on the first film layer, wherein the adhesive glue is positioned between the flexible polymer film layer and the first film layer; or each film packaging sublayer comprises a first film layer, a second film layer and a third film layer which are arranged in a stacked mode, and a flexible polymer film layer with adhesive glue, which is arranged on the third film layer, wherein the adhesive glue is located between the flexible polymer film layer and the third film layer; the first thin film layer and the second thin film layer are inorganic thin film layers or organic thin film layers, the first thin film layer and the second thin film layer are different in material, and the first thin film layer and the third thin film layer are the same in material.
In another implementation manner of the embodiment of the present invention, the number of the thin film encapsulation structures is 1.
In another implementation manner of the embodiment of the present invention, the method further includes:
and treating the surface of the barrier layer by adopting an ion implantation process.
In another implementation manner of the embodiment of the present invention, the fabricating a thin film encapsulation layer on the OLED device includes: manufacturing an organic thin film layer, an inorganic thin film layer or an organic-inorganic mixed thin film layer on the OLED device; or,
the manufacturing of the thin film encapsulation layer on the OLED device comprises the following steps: manufacturing at least one thin film packaging structure on the OLED device; each thin film packaging structure comprises a first thin film layer, a second thin film layer and a third thin film layer which are stacked; or each film packaging sublayer comprises a first film layer and a flexible polymer film layer with adhesive glue arranged on the first film layer, wherein the adhesive glue is positioned between the flexible polymer film layer and the first film layer; or each film packaging sublayer comprises a first film layer, a second film layer and a third film layer which are arranged in a stacked mode, and a flexible polymer film layer with adhesive glue, which is arranged on the third film layer, wherein the adhesive glue is located between the flexible polymer film layer and the third film layer; the first thin film layer and the second thin film layer are inorganic thin film layers or organic thin film layers, the first thin film layer and the second thin film layer are different in material, and the first thin film layer and the third thin film layer are the same in material.
In another implementation manner of the embodiment of the present invention, the method further includes:
performing at least one of the following three steps:
after the first thin film layer is manufactured, processing the surface of the first thin film layer by adopting an ion implantation process;
after the second thin film layer is manufactured, the surface of the second thin film layer is processed by adopting an ion implantation process;
and after the third thin film layer is manufactured and before the flexible polymer thin film layer is attached, treating the surface of the third thin film layer by adopting an ion implantation process.
In another implementation of the embodiment of the invention, when the surface of the third thin film layer is treated by an ion implantation process, the implanted ions are ions corresponding to at least one of Ar, N, O, Xe, He, Al, Cu, Ti, Cr, Fe, Mn, Co, P, B, Si, Ni and C, the energy of the implanted ions is 2-200KeV, and the dose of the implanted ions is 1.0 × 1012-1.0×1019ion/cm2。
In another implementation manner of the embodiment of the invention, the substrate is a flexible substrate.
In another implementation manner of the embodiment of the present invention, the method further includes:
and before the barrier layer is manufactured on the substrate, treating the surface of the flexible substrate by adopting an ion implantation process.
In a second aspect, an embodiment of the present invention further provides an OLED display device package, where the OLED display device package is manufactured by using the method of any one of the first aspects.
The technical scheme provided by the embodiment of the invention has the following beneficial effects:
the substrate and the OLED device are protected by manufacturing the barrier layer on the substrate and manufacturing the thin film packaging layer on the OLED device, so that the OLED device is prevented from being corroded by water and oxygen; in addition, the surface of the film packaging layer is treated by an ion implantation process, so that the mechanical property and the bonding property of the film can be improved, moisture and oxygen can be effectively prevented, the water and oxygen blocking performance of the film packaging layer is enhanced, and the water and oxygen blocking performance of the film packaging layer can meet the packaging requirement of a large-size OLED display device.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of an OLED display device packaging method according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an OLED display device package according to a first embodiment of the present invention;
fig. 3 is a schematic structural diagram of an OLED display device package provided in embodiment two of the present invention;
fig. 4 is a schematic structural diagram of an OLED display device package provided in embodiment three of the present invention;
fig. 5 is a schematic structural diagram of an OLED display device package provided in embodiment four of the present invention;
fig. 6 is a schematic structural diagram of an OLED display device package provided in embodiment five of the present invention;
fig. 7 is a schematic structural diagram of an OLED display device package according to a sixth embodiment of the present invention;
fig. 8 is a schematic structural diagram of an OLED display device package provided in embodiment seven of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a flowchart of an OLED display device encapsulation method according to an embodiment of the present invention, and referring to fig. 1, the method includes:
step 101: a barrier layer is formed on the substrate.
Step 102: after the OLED device is manufactured on the blocking layer, a thin film packaging layer is manufactured on the OLED device, the surface of the thin film packaging layer is processed through an ion implantation process, the thin film packaging layer covers the OLED device and the blocking layer, and the OLED device is located in the middle of the blocking layer.
The OLED device mainly comprises an electrode layer, a light emitting unit and other structures.
According to the invention, the barrier layer is manufactured on the substrate, and the thin film packaging layer is manufactured on the OLED device, so that the substrate and the OLED device are protected, and the OLED device is prevented from being corroded by water and oxygen; in addition, the surface of the film packaging layer is treated by an ion implantation process, so that the mechanical property and the bonding property of the film can be improved, moisture and oxygen can be effectively prevented, and the water and oxygen resistance of the film packaging layer is enhanced, so that the water and oxygen resistance of the film packaging layer can meet the packaging requirement of a large-size OLED display device; in addition, the thin film packaging layer covers the OLED device and the blocking layer, the thin film packaging layer is attached to the part, not covered by the OLED device, of the blocking layer, on one hand, the thin film packaging layer is prevented from being directly attached to the substrate, the blocking layer serves as an attaching object of the thin film packaging layer, the phenomenon that the thin film packaging layer is peeled off due to large elastic modulus difference when the thin film packaging layer is attached to the substrate is reduced, the whole surface of the blocking layer is attached to the substrate, and compared with the situation that the thin film packaging layer is only attached to the substrate in the periphery, the peeling.
In the embodiment of the present invention, the barrier layer and the thin film encapsulation layer may adopt the same or different film layer structures, and both may be a single-layer structure or a multi-layer structure.
In the first mode of the present invention, when the barrier layer or the thin film encapsulation layer has a single-layer structure, it may be an organic thin film layer, an inorganic thin film layer, or an organic-inorganic hybrid thin film layer.
In the second implementation manner of the present invention, when the barrier layer or the thin film encapsulation layer has a multilayer structure, an arrangement of 3 layers of organic thin film layers and inorganic thin film layers alternately stacked may be generally adopted. However, the embodiment of the present invention is not limited to this, and more film layers may be overlapped.
In a specific implementation, step 101 may include:
manufacturing an organic thin film layer, an inorganic thin film layer or an organic-inorganic mixed thin film layer on a substrate; or,
manufacturing at least one thin film packaging structure on a substrate; each thin film packaging structure comprises a first thin film layer, a second thin film layer and a third thin film layer which are stacked; or each film packaging sublayer comprises a first film layer and a flexible polymer film layer with adhesive glue arranged on the first film layer, wherein the adhesive glue is positioned between the flexible polymer film layer and the first film layer; or each film packaging sublayer comprises a first film layer, a second film layer and a third film layer which are arranged in a stacked mode, and a flexible polymer film layer with adhesive glue, which is arranged on the third film layer, wherein the adhesive glue is located between the flexible polymer film layer and the third film layer; the first thin film layer and the second thin film layer can be both inorganic thin film layers or organic thin film layers, the materials of the first thin film layer and the second thin film layer are different, and the materials of the first thin film layer and the third thin film layer are the same.
In a specific implementation, step 102 may include: manufacturing an organic thin film layer, an inorganic thin film layer or an organic-inorganic mixed thin film layer on the OLED device; or,
manufacturing at least one thin film packaging structure on the OLED device; each thin film packaging structure comprises a first thin film layer, a second thin film layer and a third thin film layer which are stacked; or each film packaging sublayer comprises a first film layer and a flexible polymer film layer with adhesive glue arranged on the first film layer, wherein the adhesive glue is positioned between the flexible polymer film layer and the first film layer; or each film packaging sublayer comprises a first film layer, a second film layer and a third film layer which are arranged in a stacked mode, and a flexible polymer film layer with adhesive glue, which is arranged on the third film layer, wherein the adhesive glue is located between the flexible polymer film layer and the third film layer; the first thin film layer and the second thin film layer can be both inorganic thin film layers or organic thin film layers, the materials of the first thin film layer and the second thin film layer are different, and the materials of the first thin film layer and the third thin film layer are the same.
When the barrier layer or the film packaging layer comprises more than two film packaging structures, the more than two film packaging structures are stacked.
Preferably, the number of the film encapsulation structures in the barrier layer and the film encapsulation layer is preferably 1, so that on one hand, the water and oxygen blocking performance of the encapsulation can be ensured, and on the other hand, the thickness of the device is not too large.
Preferably, the surface of the barrier layer, which is attached to the film encapsulation layer, is made of the same material, and the surface of the barrier layer, which is attached to the film encapsulation layer, is made of the same material, so that the phenomenon of peeling caused by large elastic modulus difference does not occur.
Preferably, in the film packaging structure formed by the first film layer, the second film layer and the third film layer, the first film layer and the third film layer are inorganic film layers, and the performance of blocking water and oxygen of the inorganic film layers is better than that of the organic film layers, so that the performance of blocking water and oxygen can be ensured.
Further, in order to strengthen the bonding force between the barrier layer and the substrate, before the barrier layer is formed on the substrate, the method may further include:
and processing the surface of the flexible substrate by adopting an ion implantation process, wherein the substrate is a flexible substrate. The substrate is a flexible substrate, so that ion implantation is facilitated, and after the ion implantation, ions can be implanted into the surface of the flexible substrate to form an organic molecule (or inorganic molecule) and ion mixed interface, so that the adhesion between the substrate and the barrier layer can be enhanced, and the problem of interlayer peeling between the barrier layer and the substrate is solved.
The flexible substrate can be made of the following materials: polyimide, Polyethylene terephthalate (PET), Polyethylene naphthalate (PEN), cycloolefin polymer (COP), Polycarbonate (PC), Polystyrene (PS), Polypropylene (PP), Polytetrafluoroethylene (PTFE).
In other implementations, the substrate may also be a non-flexible substrate, which is not limited in the present invention.
Further, the method further comprises: and treating the surface of the barrier layer by adopting an ion implantation process.
For example, when the barrier layer includes at least one thin film encapsulation structure, the surface of the third thin film layer or the flexible polymer thin film layer is treated using an ion implantation process. The third film layer (or flexible polymer film layer) may be a third film layer (or flexible polymer film layer) in the barrier layer and/or the film encapsulation layer.
Ion implantation treatment is performed on the surface of the third film layer or the flexible polymer film layer, so that the water and oxygen blocking performance of the barrier layer is greatly improved, and meanwhile, the adhesion degree between the film packaging layer and the barrier layer can be improved.
In the embodiment of the present invention, when the surface of the third thin film layer or the flexible polymer thin film layer is treated by an ion implantation process, the implanted ions are ions corresponding to at least one of Ar (argon), N (nitrogen), O (oxygen), Xe (xenon), He (helium), Al (aluminum), Cu (copper), Ti (titanium), Cr (chromium), Fe (iron), Mn (manganese), Co (cobalt), P (phosphorus), B (boron), Si (silicon), Ni (nickel) and C (carbon) (may be single ion implantation or multi-ion implantation), the energy of the implanted ions is 2 to 200KeV, and the dose of the implanted ions is 1.0 × 1012-1.0×1019ion/cm2. In addition, the parameters of the ion implantation process used for the other layers mentioned in the embodiments of the present invention may be the same.
The organic film and the inorganic film are overlapped and packaged by a multilayer film, so that the problem of large elastic modulus difference exists, and particularly, in the use of a flexible display product, the phenomenon that the inorganic film and the organic film are peeled off due to thermal stretching movement caused by various mechanical movements such as bending (bending), stretching (stretching) and twisting (twisting) and the difference of thermal expansion coefficients is generated. In order to avoid the problems, the surface of the inorganic film or the organic film can be treated by adopting an ion implantation process to form a mixed polymer interface, so that the problem of interlayer peeling caused by multilayer stack packaging can be solved, and the inorganic film and the organic film are prevented from being peeled. Specifically, at least one of the following three steps may be adopted:
after fabricating the first thin film layer, the method may further comprise: and processing the surface of the first thin film layer by adopting an ion implantation process.
After fabricating the second thin film layer, the method may further comprise: and processing the surface of the second film layer by adopting an ion implantation process.
After making the third film layer and before laminating the flexible polymer film layer, the method may further comprise: and processing the surface of the third film layer by adopting an ion implantation process.
Ion implantation treatment is performed on the surface of the first film layer, the second film layer or the third film layer, so that the water and oxygen blocking performance and the interlayer adhesion degree of the barrier layer or the packaging film layer are greatly improved.
In an embodiment of the invention, the first thin film layer, the second thin film layer, and the third thin film layer may be formed by vacuum evaporation, PECVD, magnetron sputtering, or inkjet printing.
In the embodiment of the present invention, the inorganic thin film layer may be A12O3、SiO2MgO (magnesium oxide), SiN, NiC and MgF2The organic thin film layer may be made of at least one of (magnesium fluoride), and the organic thin film layer may be made of polymethyl methacrylate (PMMA), NPB (N, N '-di- (1-naphthyl) -N, N' -biphenyl-1, 1 '-biphenyl-4, 4' -diamine), m-MTDATA (4, 4 '-N, N' -oxadiazole-biphenyl), TPD (N, N '-diphenyl-N, N' -di (3-methylphenyl) benzidine), Alq3At least one of (8-hydroxyquinoline aluminum) and BCP (4, 4 ', 4' -tris (3-tolylaniline) triphenylamine). The flexible polymer film layer may be made of one of polyimide, PET, PEN, COP, PC, PS, PP, and PTFE. The inorganic thin film layer, the organic thin film layer and the flexible polymer thin film layer formed by the materials can ensure light transmittance.
The barrier layer manufacturing method and the thin film encapsulation layer manufacturing method described in the embodiments of the present invention can be freely combined, and the following description will exemplify specific embodiments (the substrate is a flexible substrate as an example):
the first implementation mode comprises the following steps:
the structure of the OLED display device package manufactured in this embodiment mode is shown in fig. 2, and in conjunction with fig. 2, this embodiment mode includes the following steps:
firstly, forming a barrier layer 30 on a flexible substrate 10, wherein the barrier layer 30 comprises an inorganic thin film layer, an organic thin film layer and a surface modified inorganic thin film layer; the surface modified inorganic film layer is an inorganic film layer subjected to surface treatment by an ion implantation process and comprises an inorganic film layer and an ion implantation layer implanted into the surface of the inorganic film layer.
In a second step, an inorganic thin film layer 31, an organic thin film layer 32 and an inorganic thin film layer 33a are sequentially deposited on (the cathode of) the OLED device 20 prepared on the barrier layer 30.
And thirdly, implanting ions into the surface of the inorganic thin film layer 33a by adopting an ion implantation technology to perform surface modification, and forming a smooth and compact ion implantation layer 33b on the surface of the inorganic thin film layer 33 a.
In this embodiment, the second step and the third step are performed only once, and the film encapsulation layer 34 includes the inorganic thin film layer 31, the organic thin film layer 32, and the surface-modified inorganic thin film layer 33. However, the present invention is not limited thereto, and may be repeatedly performed 2 times or even multiple times.
The second embodiment:
the structure of the OLED display device package manufactured in this embodiment mode is shown in fig. 3, and in conjunction with fig. 3, this embodiment mode includes the following steps:
in a first step, a resist layer 40 including a surface modified inorganic thin film layer, a surface modified organic thin film layer, and a surface modified inorganic thin film layer is formed on a flexible substrate 10. The surface modified inorganic thin film layer comprises an inorganic thin film layer and an ion injection layer injected into the surface of the inorganic thin film layer; the surface modified organic thin film layer comprises an organic thin film layer and an ion injection layer injected into the surface of the organic thin film layer; the surface modified inorganic thin film layer comprises an inorganic thin film layer and an ion injection layer injected into the surface of the inorganic thin film layer.
Second, an inorganic thin film layer 41a is deposited on (the cathode of) the OLED device 20 prepared on the barrier layer 40; and ion implantation technology is adopted to implant ions into the surface of the inorganic thin film layer 41a for surface modification, and a smooth and dense ion implantation layer 41b is formed on the surface of the inorganic thin film layer 41 a. The inorganic thin film layer 41a and the ion-implanted layer 41b constitute a surface-modified inorganic thin film layer 41.
Thirdly, depositing an organic thin film layer 42a on the surface modified inorganic thin film layer 41; and ions are implanted into the surface of the organic thin film layer 42a by an ion implantation technique to modify the surface, thereby forming a smooth and dense ion-implanted layer 42b on the surface of the organic thin film layer 42 a. The organic thin film layer 42a and the ion-implanted layer 42b constitute a surface-modified organic thin film layer 42.
A fourth step of depositing an inorganic thin film layer 43a on the surface-modified organic thin film layer 42; and ions are implanted into the surface of the inorganic thin film layer 43a by an ion implantation technique to modify the surface, thereby forming a smooth and dense ion implanted layer 43b on the surface of the inorganic thin film layer 43 a. The inorganic thin film layer 43a and the ion-implanted layer 43b constitute a surface-modified inorganic thin film layer 43.
In the present embodiment, the second to fourth steps are performed only once, and the film encapsulation layer 44 includes the surface-modified inorganic thin film layer 41, the surface-modified organic thin film layer 42, and the surface-modified inorganic thin film layer 43. However, the present invention is not limited thereto, and may be repeatedly performed 2 times or even multiple times.
The third embodiment is as follows:
the structure of the OLED display device package manufactured in this embodiment mode is shown in fig. 4, and in conjunction with fig. 4, this embodiment mode includes the following steps:
in the first step, ions are implanted into the flexible substrate 10a to modify the surface thereof, thereby forming a smooth and dense ion-implanted layer 10b on the surface of the flexible substrate 10 a.
Secondly, forming a barrier layer 50 on the modified flexible substrate 10, wherein the barrier layer 50 comprises an inorganic thin film layer, an organic thin film layer and a surface modified inorganic thin film layer; the surface modified inorganic thin film layer comprises an inorganic thin film layer and an ion injection layer injected into the surface of the inorganic thin film layer.
In a third step, an inorganic thin film layer 51, an organic thin film layer 52 and an inorganic thin film layer 53a are sequentially deposited on (the cathode of) the OLED device 20 prepared on the barrier layer 50.
And a fourth step of implanting ions into the surface of the inorganic thin film layer 53a by an ion implantation technique to modify the surface, thereby forming a smooth and dense ion-implanted layer 53b on the surface of the inorganic thin film layer 53 a. The inorganic thin film layer 53a and the ion-implanted layer 53b constitute a surface-modified inorganic thin film layer 53.
In this embodiment, the third step and the fourth step are performed only once, and the film encapsulation layer 54 includes the inorganic thin film layer 51, the organic thin film layer 52, and the surface-modified inorganic thin film layer 53. However, the present invention is not limited thereto, and may be repeatedly performed 2 times or even multiple times.
The fourth embodiment:
the structure of the OLED display device package manufactured in this embodiment mode is shown in fig. 5, and in conjunction with fig. 5, this embodiment mode includes the following steps:
in the first step, ions are implanted into the flexible substrate 10a to modify the surface thereof, thereby forming a smooth and dense ion-implanted layer 10b on the surface of the flexible substrate 10 a.
And secondly, forming a blocking layer 60 on the surface modified substrate 10, wherein the blocking layer 60 comprises a surface modified inorganic thin film layer, a surface modified organic thin film layer and a surface modified inorganic thin film layer. The surface modified inorganic thin film layer comprises an inorganic thin film layer and an ion injection layer injected into the surface of the inorganic thin film layer; the surface modified organic thin film layer comprises an organic thin film layer and an ion injection layer injected into the surface of the organic thin film layer; the surface modified inorganic thin film layer comprises an inorganic thin film layer and an ion injection layer injected into the surface of the inorganic thin film layer.
Third, an inorganic thin film layer 61a is formed on (the cathode of) the OLED device 20 formed on the barrier layer 60; by using the ion implantation technique, ions are implanted into the surface of the inorganic thin film layer 61a to modify the surface, thereby forming a smooth and dense ion-implanted layer 61b on the surface of the inorganic thin film layer 61 a. The surface-modified inorganic thin film layer 61 is formed of the inorganic thin film layer 61a and the ion-implanted layer 61 b.
A fourth step of depositing an organic thin film layer 62a on the surface-modified inorganic thin film layer 61; by using the ion implantation technique, ions are implanted into the surface of the organic thin film layer 62a to modify the surface, thereby forming a smooth and dense ion-implanted layer 62b on the surface of the organic thin film layer 62 a. The organic thin film layer 62a and the ion-implanted layer 62b constitute a surface-modified organic thin film layer 62.
A fifth step of depositing an inorganic thin film layer 66a on the surface-modified organic thin film layer 63; by using the ion implantation technique, ions are implanted into the surface of the inorganic thin film layer 66a to modify the surface, thereby forming a smooth and dense ion-implanted layer 66b on the surface of the inorganic thin film layer 66 a. The inorganic thin film layer 63a and the ion-implanted layer 63b constitute a surface-modified inorganic thin film layer 63.
In this embodiment, the third step to the fifth step are performed only once, and the thin film encapsulation layer 64 includes the surface-modified inorganic thin film layer 61, the surface-modified organic thin film layer 62, and the surface-modified inorganic thin film layer 63. However, the present invention is not limited thereto, and may be repeatedly performed 2 times or even multiple times.
The fifth embodiment:
the structure of the OLED display device package manufactured in this embodiment mode is shown in fig. 6, and in conjunction with fig. 6, this embodiment mode includes the following steps:
in the first step, a blocking layer 70 is formed on the flexible substrate 10, and the blocking layer 70 includes an organic-inorganic hybrid thin film layer and an ion implantation layer inside the organic-inorganic hybrid thin film layer.
In the second step, inorganic and organic materials are deposited on (the cathode of) the OLED device 20 prepared on the barrier layer 70 to form an organic-inorganic hybrid thin film layer 70 a.
Thirdly, ions are implanted into the surface of the organic-inorganic hybrid thin film layer 70a by adopting an ion implantation technology to perform surface modification, and an ion implantation layer 70b is formed inside the organic-inorganic hybrid thin film layer 70 a.
In this embodiment, the second step and the third step are performed only once, and the thin film encapsulation layer 71 includes the organic-inorganic hybrid thin film layer 70a and the ion implantation layer 70 b. However, the present invention is not limited thereto, and may be repeatedly performed 2 times or even multiple times.
Embodiment six:
the structure of the OLED display device package manufactured in this embodiment mode is shown in fig. 7, and in conjunction with fig. 7, this embodiment mode includes the following steps:
in the first step, a barrier layer 80 is formed on the flexible substrate 10, and the barrier layer 80 includes an inorganic thin film layer, an adhesive, a polymer thin film layer, and an ion implantation layer implanted into the surface of the polymer thin film layer.
In a second step, an inorganic thin film layer 81 is deposited over (the cathode of) the OLED device 20 prepared on the barrier layer 70.
And thirdly, attaching the flexible polymer film layer 83 with the adhesive 82 to the inorganic film layer 81 in a roller 11 mode.
And a fourth step of implanting ions into the polymer thin film layer 83 by an ion implantation technique to modify the surface thereof, thereby forming a smooth and dense ion-implanted layer 84 inside the polymer thin film layer 83.
Note that, in this embodiment, the third step and the fourth step are performed only once, and the film encapsulation layer 85 includes the inorganic film layer 81, the adhesive glue 82, the flexible polymer film layer 83, and the ion implantation layer 84. However, the present invention is not limited thereto, and may be repeatedly performed 2 times or even multiple times.
Embodiment seven:
the structure of the OLED display device package manufactured in this embodiment mode is shown in fig. 8, and in conjunction with fig. 8, this embodiment mode includes the following steps:
in the first step, a barrier layer 90 is formed on the flexible substrate 10, and the barrier layer 90 includes an inorganic thin film layer, an organic thin film layer, an inorganic thin film layer, an adhesive, a polymer thin film layer, and an ion implantation layer implanted into the surface of the polymer thin film layer.
Secondly, depositing an inorganic thin film layer 91, an organic thin film layer 92 and an inorganic thin film layer 93 on (the cathode of) the OLED device 20 prepared on the barrier layer 30;
and thirdly, attaching the flexible polymer film layer 95 with the adhesive 94 to the inorganic film layer 93 by adopting a roller 11 mode.
And a fourth step of implanting ions into the polymer thin film layer 95 by using an ion implantation technique to perform surface modification, thereby forming a smooth and dense ion implantation layer 96 inside the polymer thin film layer 95.
In this embodiment, the second to fourth steps are performed only once, and the film encapsulation layer 97 includes an inorganic thin film layer 91, an organic thin film layer 92, an inorganic thin film layer 93, an adhesive glue 94, a flexible polymer thin film layer 95, and an ion implantation layer 96. However, the present invention is not limited thereto, and may be repeatedly performed 2 times or even multiple times.
The embodiment of the invention also provides an OLED display device package which is manufactured by adopting the method provided by the figure 1.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. An OLED display device packaging method, the method comprising:
manufacturing a barrier layer on a substrate;
after the OLED device is manufactured on the blocking layer, a thin film packaging layer is manufactured on the OLED device, the surface of the thin film packaging layer is processed through an ion injection process, the thin film packaging layer covers the OLED device and the blocking layer, and the OLED device is located in the middle of the blocking layer.
2. The method of claim 1, wherein fabricating a barrier layer on the substrate comprises: manufacturing an organic thin film layer, an inorganic thin film layer or an organic-inorganic mixed thin film layer on the substrate; or,
the manufacturing of the barrier layer on the substrate comprises the following steps: manufacturing at least one thin film packaging structure on the substrate; each thin film packaging structure comprises a first thin film layer, a second thin film layer and a third thin film layer which are stacked; or each film packaging sublayer comprises a first film layer and a flexible polymer film layer with adhesive glue arranged on the first film layer, wherein the adhesive glue is positioned between the flexible polymer film layer and the first film layer; or each film packaging sublayer comprises a first film layer, a second film layer and a third film layer which are arranged in a stacked mode, and a flexible polymer film layer with adhesive glue, which is arranged on the third film layer, wherein the adhesive glue is located between the flexible polymer film layer and the third film layer; the first thin film layer and the second thin film layer are inorganic thin film layers or organic thin film layers, the first thin film layer and the second thin film layer are different in material, and the first thin film layer and the third thin film layer are the same in material.
3. The method of claim 2, wherein the number of the thin film encapsulation structures is 1.
4. The method according to any one of claims 1 to 3, further comprising:
and treating the surface of the barrier layer by adopting an ion implantation process.
5. The method of claim 1, wherein fabricating a thin film encapsulation layer on the OLED device comprises: manufacturing an organic thin film layer, an inorganic thin film layer or an organic-inorganic mixed thin film layer on the OLED device; or,
the manufacturing of the thin film encapsulation layer on the OLED device comprises the following steps: manufacturing at least one thin film packaging structure on the OLED device; each thin film packaging structure comprises a first thin film layer, a second thin film layer and a third thin film layer which are stacked; or each film packaging sublayer comprises a first film layer and a flexible polymer film layer with adhesive glue arranged on the first film layer, wherein the adhesive glue is positioned between the flexible polymer film layer and the first film layer; or each film packaging sublayer comprises a first film layer, a second film layer and a third film layer which are arranged in a stacked mode, and a flexible polymer film layer with adhesive glue, which is arranged on the third film layer, wherein the adhesive glue is located between the flexible polymer film layer and the third film layer; the first thin film layer and the second thin film layer are inorganic thin film layers or organic thin film layers, the first thin film layer and the second thin film layer are different in material, and the first thin film layer and the third thin film layer are the same in material.
6. The method according to claim 2 or 5, characterized in that the method further comprises:
performing at least one of the following three steps:
after the first thin film layer is manufactured, processing the surface of the first thin film layer by adopting an ion implantation process;
after the second thin film layer is manufactured, the surface of the second thin film layer is processed by adopting an ion implantation process;
and after the third thin film layer is manufactured and before the flexible polymer thin film layer is attached, treating the surface of the third thin film layer by adopting an ion implantation process.
7. The method of claim 6, wherein the ion implantation process is performed to treat the surface of the third thin film layer, and the implanted ions are ions corresponding to at least one of the following elements: ar, N, O, Xe, He, Al, Cu, Ti, Cr, Fe, Mn,Co, P, B, Si, Ni and C, the energy of the implanted ions is 2-200KeV, and the dose of the implanted ions is 1.0 × 1012-1.0×1019ion/cm2。
8. The method of any one of claims 1-3, wherein the substrate is a flexible substrate.
9. The method of claim 8, further comprising:
and before the barrier layer is manufactured on the substrate, treating the surface of the flexible substrate by adopting an ion implantation process.
10. An OLED display device package, wherein the OLED display device package is manufactured by the method of any one of claims 1-9.
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| US10305064B2 (en) | 2017-04-28 | 2019-05-28 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Flexible organic light emitting diode display and manufacturing method thereof |
| CN109980117A (en) * | 2017-12-27 | 2019-07-05 | Tcl集团股份有限公司 | A kind of packaging film and preparation method thereof, photoelectric device |
| CN108365117A (en) * | 2018-01-31 | 2018-08-03 | 昆山国显光电有限公司 | Encapsulating structure and encapsulating method and structure preparation facilities |
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