CN106486333B - A kind of plasma processing apparatus - Google Patents
A kind of plasma processing apparatus Download PDFInfo
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- CN106486333B CN106486333B CN201510536174.4A CN201510536174A CN106486333B CN 106486333 B CN106486333 B CN 106486333B CN 201510536174 A CN201510536174 A CN 201510536174A CN 106486333 B CN106486333 B CN 106486333B
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- electrode group
- lower electrode
- switch
- processing apparatus
- top electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
The application provides a kind of plasma processing apparatus, the plasma processing apparatus can not only provide biggish ion bombardment energy when needing to treat processed material surface and being pre-processed, but also can reduce plasma bombardment energy when treating processed material surface and carrying out material deposition.The plasma processing apparatus structure is simple and reduces costs relative to existing plasma processing apparatus.The plasma processing apparatus includes top electrode group, lower electrode group, first switch and the second switch.Top electrode group includes at least one top electrode.Lower electrode group includes at least one lower electrode.The lower electrode supporting object to be treated of lower electrode group.Top electrode group is grounded by first switch.Lower electrode group is grounded by second switch.
Description
Technical field
The present invention relates to plasma treatment technique fields, and in particular to a kind of plasma processing apparatus.
Background technique
In existing plasma processing apparatus, common electrode connection mode has 2 kinds: one is top electrode ground connection,
Lower electrode is connected with radio-frequency power supply, in this electrode connection mode, since upper/lower electrode remains voltage difference, plasma
Plasma in body processing unit is larger to the bombardment effect of the object to be processed on lower electrode under voltage difference effect, can use
In removing object surface atom to be processed or atomic group, thus this electrode connection mode be common in plasma etch apparatus, etc.
In gas ions physical cleaning equipment and plasma sputtering equipment etc.；Another kind is lower electrode ground connection, top electrode and radio-frequency power supply
It is connected, in this electrode connection mode, since lower electrode is grounded, the plasma in plasma processing apparatus is to lower electricity
The bombardment effect of object to be processed on extremely is smaller, and therefore, this electrode connection mode is common in plasma activated chemical vapour deposition
In equipment, plasma chemistry cleaning equipment etc..
And in plasma processing process, processed material surface can either be treated by, which generally requiring, is pre-processed, again
Scheduled material can be being deposited on pending object surface.For example, needing to treat processed material surface in material deposition process
Row pretreatment, in order to reach preferable pretreating effect, it is desirable to provide biggish ion bombardment energy improves substrate surface material
Characteristic, improve surface binding force, improve material deposition quality.And it needs to reduce plasma bombardment in material deposition process
Energy.Existing apparatus for processing plasma usually passes through in order to meeting above-mentioned needs and the radio frequencies of multiple and different frequencies is arranged
Source, by adjusting the bombarding energy of ion to the adjusting of radio frequency source, this considerably increases the costs of apparatus for processing plasma
And complexity.
Summary of the invention
In order to solve the above technical problems, the application provides a kind of plasma processing apparatus, the plasma processing apparatus
Not only biggish ion bombardment energy can be provided when needing to treat processed material surface and being pre-processed, but also can be to be processed
Object surface carries out reducing plasma bombardment energy when material deposition.The plasma processing apparatus structure it is simple and also relative to
Existing plasma processing apparatus reduces costs.
The present invention provides a kind of plasma processing apparatus, which includes top electrode group, lower electrode
Group, first switch and the second switch.Top electrode group includes at least one top electrode.Lower electrode group includes at least one lower electrode.
The lower electrode supporting object to be treated of lower electrode group.Top electrode group is grounded by first switch.Lower electrode group passes through second switch
Ground connection.
According to an aspect of the present invention, top electrode group includes at least two top electrodes, between each top electrode mutually simultaneously
Connection.Lower electrode group includes at least two lower electrodes, parallel with one another between each lower electrode.
According to an aspect of the present invention, the top electrode of top electrode group is opposite with the lower electrode of adjacent lower electrode group.
According to an aspect of the present invention, RF plasma processing device further includes transformer.Top electrode group and lower electricity
Pole group is connected to power supply by the transformer.Top electrode group and lower electrode group are separately connected two output ends of transformer.
According to an aspect of the present invention, in the case where carrying out pretreated situation to object to be treated, first switch is closed simultaneously
And second switch disconnects, top electrode group ground connection, to increase the bombarding energy of plasma.
According to an aspect of the present invention, in the case where carrying out material deposition to object to be treated, first switch is disconnected
And when second switch is closed, lower electrode group ground connection, to reduce the bombarding energy of plasma.
According to an aspect of the present invention, first switch and the second switch disconnect when, the top electrode of top electrode group with it is described
The absolute value of voltage of the lower electrode of lower electrode group is equal, opposite in phase.
According to an aspect of the present invention, the plasma processing apparatus further include: control unit, described control unit
The closure and disconnection of the first switch and/or the second switch are controlled according to preset control condition.
Plasma processing apparatus according to the present invention can both be mentioned when needing to treat processed material surface and being pre-processed
For biggish ion bombardment energy, and plasma bombardment energy can be reduced when treating processed material surface and carrying out material deposition
Amount.The plasma processing apparatus structure is simple and reduces costs relative to existing plasma processing apparatus.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, not
It can be interpreted as to composition any restrictions of the invention.It for those of ordinary skill in the art, can also be attached according to these
Figure obtains other embodiments and the corresponding attached drawing of other embodiments.
Fig. 1 is the schematical structure chart of plasma processing apparatus according to an embodiment of the invention.
Specific embodiment
Below in conjunction with attached drawing, the technical solution of the more than one embodiment of the application is described.Obviously, it is retouched
The embodiment stated is only some embodiments of the present application, instead of all the embodiments.It should be noted that based in the application
These embodiments, those of ordinary skill in the art's every other embodiment obtained shall fall in the protection scope of this application.
Fig. 1 is the schematical structure chart of plasma processing apparatus 1 according to an embodiment of the invention.Such as Fig. 1
Shown, plasma processing apparatus 1 includes top electrode group 2, lower electrode group 3, first switch 4 and second switch.Top electrode group 2 is wrapped
Include at least one top electrode 21.Lower electrode group 3 includes at least one lower electrode 31.The support of lower electrode 31 of lower electrode group 3 is located
Manage object 8.Top electrode group 2 is grounded by first switch 4.Lower electrode group 3 is grounded by second switch.
It further says, top electrode group 2 includes at least two top electrodes 21, parallel with one another between each top electrode 21.Under
Electrode group 3 includes at least two lower electrodes 31, parallel with one another between each lower electrode 31.In the present embodiment as shown in Figure 1,
Top electrode group 2 includes two top electrodes 21, parallel with one another between the two top electrodes 21.Lower electrode group 3 includes two lower electrodes
31, it is parallel with one another between electrodes 31 under the two.It should be noted that the present invention is not limited thereto, top electrode group of the present invention can
To only include 1 top electrode, lower electrode group can only include a lower electrode.
It further says, the lower electrode 31 of the top electrode 21 of top electrode group 2 and adjacent lower electrode group 3 is opposite.Namely
It says, the top electrode 21 of top electrode group 2 and the lower electrode 31 of lower electrode group 3 alternate, and adjacent top electrode 21 and lower electricity
Pole 31 is relative to each other.Space between adjacent top electrode 21 and lower electrode 31 generates plasma.
It further says, RF plasma processing device 1 further includes transformer 6.Top electrode group 2 and lower electrode group 3 are logical
Transformer 6 is crossed to connect with power supply 7.Top electrode group 2 and lower electrode group 3 are separately connected two output ends of transformer 6.Specifically
It says, as shown in Figure 1, in the present embodiment, top electrode group 2 connects the first output end 61 of transformer 6, the lower connection of electrode group 3 becomes
The second output terminal 62 of depressor 6.The input terminal of transformer 6 is connected with power supply device 7.Power supply 7 includes adaptation 71 and power supply 72.
Further to say, the plasma processing apparatus 1 of embodiment according to the present invention further includes cavity (not shown), on
The lower electrode 31 of the top electrode 21 of electrode group 2 and lower electrode group 31 is contained in cavity.Specifically, top electrode group 2 powers on
It is contained in cavity to 31 intersecting of lower electrode of pole 21 and lower electrode group 31.
In the following, being described in conjunction with the accompanying the plasma processing apparatus 1 of embodiment according to the present invention in different applied fields
Operation under closing.
In the case where carrying out pretreated situation to object to be treated 8, the closure of first switch 4 and second switch disconnection are powered on
Pole group 2 is grounded, to increase the bombarding energy of plasma.Here, pretreatment, which refers to, utilizes plasma bombardment object to be treated 8
Surface.Specifically, can be closed first switch 4 when needing to pre-process object to be treated 8 and disconnect second
Switch.In this way, top electrode group 2 is grounded, the current potential of top electrode group 2 is 0.Lower electrode group 3 is connected with transformer 6, thus, adjacent
Top electrode 21 and lower electrode 31 between form potential difference, ion in plasma generates acceleration.To increase
To the bombarding energy of the ion in the plasma of lower electrode 31 and object to be treated 8 bombard.On the other hand, lower electrode
The electrical attraction of ion in 31 pairs of surrounding plasmas is stronger.To further increase to lower 31 He of electrode
The bombarding energy of ion in the plasma of object to be treated 8 bombard.
On the other hand, in the case where carrying out material deposition to object to be treated 8, first switch 4 disconnects and second switch
Closure, lower electrode group 3 is grounded, to reduce the bombarding energy of plasma.Specifically, needing to carry out object to be treated 8
Material deposit when, first switch 4 can be disconnected and be closed second switch, in this way, lower electrode group 3 be grounded, lower electrode group 3 it is every
The current potential of one lower electrode 31 is 0.To, lower electrode 31 is weaker to the electrical attraction of the ion in surrounding plasma,
To reduce the bombarding energy of the ion in the plasma bombard to lower electrode 31 and object to be treated 8.
Another aspect, when first switch 4 and second switch all disconnect, the top electrode 21 of top electrode group 2 and lower electrode group 3
Lower electrode 31 absolute value of voltage it is equal, opposite in phase.In this way, forming thermocouple between adjacent top electrode 21 and lower electrode 31
Structure is closed, electric field is limited in substantially between adjacent electrode 31 and lower electrode 31.On the whole, top electrode group 2 and lower electrode group
Electroneutral is presented over the ground.In this way, the electric effect of the cavity plasma of the plasma processing apparatus of ground connection can be reduced,
Improve uniformity of the plasma between adjacent top electrode 21 and lower electrode 31.
It further says, can also include control unit (not shown) according to the plasma processing apparatus 1 of the present embodiment,
Control unit controls the closure and disconnection of first switch and/or second switch according to preset control condition.To realize
The automatic switchover of a variety of processing methods.
It, both can be when needing to treat processed material surface and being pre-processed according to the plasma processing apparatus of the present embodiment
Biggish ion bombardment energy is provided, and plasma bombardment energy can be reduced when treating processed material surface and carrying out material deposition
Amount.The plasma processing apparatus structure is simple and reduces costs relative to existing plasma processing apparatus.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical or equivalent elements in process, method, article or equipment including the element.In addition, term
"upper", "lower" etc. do not constitute absolute spatial relationship limitation, only a kind of opposite concept.
A kind of plasma processing apparatus provided herein is described in detail above, tool used herein
The principle and implementation of this application are described for body example, the above embodiments are only used to help understand this Shen
Method and inventive concept please；At the same time, for those skilled in the art is being embodied according to the thought of the application
There will be changes in mode and application range, in conclusion the contents of this specification should not be construed as limiting the present application.
Claims (5)
1. a kind of plasma processing apparatus characterized by comprising
Top electrode group, the top electrode group include at least one top electrode；
Lower electrode group, the lower electrode group include at least one lower electrode, the lower electrode supporting treated object of the lower electrode group
Body；
First switch, the top electrode group are grounded by the first switch；
Second switch, the lower electrode group are grounded by the second switch；
In the case where carrying out pretreated situation to the object to be treated, the first switch is closed and the second switch is disconnected
It opens, the top electrode group ground connection, to increase the bombarding energy of plasma；Material deposition is being carried out to the object to be treated
In the case of, the first switch disconnects and the second switch is closed, the lower electrode group ground connection, to reduce plasma
Bombarding energy；When the first switch and the second switch disconnect, the top electrode of the top electrode group and the lower electrode
The absolute value of voltage of the lower electrode of group is equal, opposite in phase.
2. plasma processing apparatus according to claim 1, which is characterized in that
The top electrode group includes at least two top electrodes, parallel with one another between each top electrode；
The lower electrode group includes at least two lower electrodes, parallel with one another between each lower electrode.
3. plasma processing apparatus according to claim 1, which is characterized in that
The top electrode of the top electrode group is opposite with the lower electrode of the adjacent lower electrode group.
4. plasma processing apparatus according to claim 1, which is characterized in that the plasma processing apparatus also wraps
It includes:
Transformer, the top electrode group and the lower electrode group are connected to power supply by the transformer, the top electrode group and
The lower electrode group is separately connected two output ends of transformer.
5. plasma processing apparatus according to claim 1, which is characterized in that the plasma processing apparatus also wraps
It includes:
Control unit, described control unit control the first switch and/or described second according to preset control condition
The closure and disconnection of switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510536174.4A CN106486333B (en) | 2015-08-27 | 2015-08-27 | A kind of plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510536174.4A CN106486333B (en) | 2015-08-27 | 2015-08-27 | A kind of plasma processing apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN106486333A CN106486333A (en) | 2017-03-08 |
| CN106486333B true CN106486333B (en) | 2019-07-09 |
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| CN201510536174.4A Active CN106486333B (en) | 2015-08-27 | 2015-08-27 | A kind of plasma processing apparatus |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1762044A (en) * | 2003-03-04 | 2006-04-19 | 株式会社日立国际电气 | Substrate processor and method of manufacturing device |
| JP2009114482A (en) * | 2007-11-02 | 2009-05-28 | Sodick Co Ltd | Method and apparatus for treating metal surface by electron beam |
| CN102217045A (en) * | 2009-05-01 | 2011-10-12 | 先进能源工业公司 | Method and apparatus for controlling ion energy distribution |
| CN203971712U (en) * | 2014-08-05 | 2014-12-03 | 南京永研电子有限责任公司 | Plasma emission-control equipment |
| CN204994049U (en) * | 2015-08-27 | 2016-01-20 | 上海至纯洁净系统科技股份有限公司 | Circuit structure among plasma processing apparatus |
-
2015
- 2015-08-27 CN CN201510536174.4A patent/CN106486333B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1762044A (en) * | 2003-03-04 | 2006-04-19 | 株式会社日立国际电气 | Substrate processor and method of manufacturing device |
| JP2009114482A (en) * | 2007-11-02 | 2009-05-28 | Sodick Co Ltd | Method and apparatus for treating metal surface by electron beam |
| CN102217045A (en) * | 2009-05-01 | 2011-10-12 | 先进能源工业公司 | Method and apparatus for controlling ion energy distribution |
| CN203971712U (en) * | 2014-08-05 | 2014-12-03 | 南京永研电子有限责任公司 | Plasma emission-control equipment |
| CN204994049U (en) * | 2015-08-27 | 2016-01-20 | 上海至纯洁净系统科技股份有限公司 | Circuit structure among plasma processing apparatus |
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| Publication number | Publication date |
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| CN106486333A (en) | 2017-03-08 |
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Address after: No. 170 purple sea road, Minhang District, Shanghai Applicant after: Shanghai PNC Process Systems Co., Ltd. Address before: 200241 03A 1, Ting 1 building, 555 Dongchuan Road, Minhang District, Shanghai. Applicant before: Shanghai PNC Process Systems Co., Ltd. |
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