CN106409761A - Workpiece processing method - Google Patents
Workpiece processing method Download PDFInfo
- Publication number
- CN106409761A CN106409761A CN201610616617.5A CN201610616617A CN106409761A CN 106409761 A CN106409761 A CN 106409761A CN 201610616617 A CN201610616617 A CN 201610616617A CN 106409761 A CN106409761 A CN 106409761A
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- Prior art keywords
- machined object
- grinding
- segmentation
- processing method
- abrasive particle
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- 238000003672 processing method Methods 0.000 title claims abstract description 21
- 238000000227 grinding Methods 0.000 claims abstract description 108
- 230000011218 segmentation Effects 0.000 claims abstract description 62
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000005520 cutting process Methods 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008450 motivation Effects 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- TZIBOXWEBBRIBM-UHFFFAOYSA-N cerium(3+) oxygen(2-) titanium(4+) Chemical compound [O--].[O--].[Ti+4].[Ce+3] TZIBOXWEBBRIBM-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention provides a workpiece processing method to prevent grains from being attached to a device chip. The workpiece processing method comprises following steps of a segmentation step and a grinding step. In the segmentation step, a segmentation groove (15) whose depth is equivalent to the complete thickness of a device chip (17) is formed in the front face (11a) of a to-be-processed object (11) along a segmentation predetermined line. The back face (11b) of the to-be-processed object is ground so as to allow the segmentation groove to be exposed to the back face side, so the to-be-processed object is segmented into several device chips. After the segmentation step, in the grinding step, grinding liquid without grains is provided for the to-be-processed object while a grinding gasket (44) with grains is used for grinding the back face of the to-be-processed object, so the grinding distortion of the back face of the to-be-processed object is removed and the edge part (17a) of each device chip after the segmentation is processed into a curved-surface shape.
Description
Technical field
The present invention relates to the processing method of machined object, the machined object of tabular is divided into multiple device chips.
Background technology
In the electronic equipment with mobile phone or personal computer as representative, there is the device core of electronic circuit (device)
The structural element that piece necessitates.Device chip e.g. utilizes a plurality of segmentation preset lines (spacing track) to divide by semiconductors such as silicon
The front of chip that material is formed and after defining electronic circuit in each region along this segmentation preset lines segmentation chip from
And produce.
In recent years, for the purpose of the miniaturization of device chip, lightweight etc., make above-mentioned such crystalline substance using methods such as grindings
Piece thinning and the chance that is processed increases.For example, be equivalent to the complete of device chip if formed using the face side in chip
The slot segmentation of the depth of work thickness simultaneously carries out grinding to rear side and makes DBG (the Dicing Before that slot segmentation exposes
Grinding：Scribing before grinding), then can make wafer thinning and be processed being divided into multiple device chips
(for example, referring to patent document 1 and patent document 2).
But, when making wafer thinning by grinding, as be ground on the back side in face can produce grinding distortion and lead
The rupture strength causing device chip reduces.Therefore, after grinding chip, using CMP (Chemical Mechanical
Polishing：Cmp) etc. method chip is ground and remove grinding distortion.
Patent document 1：Japanese Unexamined Patent Application 62-4341 publication
Patent document 2：Japanese Unexamined Patent Publication 2000-21820 publication
However, when using CMP to by above-mentioned DBG grinding, segmentation after chip be ground when, be included in lapping liquid
Free abrasive can invade slot segmentation and be attached to the side of device chip.When abrasive particle is attached to the side of device chip,
Unfavorable condition can easily be produced in operation afterwards.
Content of the invention
The present invention be in view of this problem points and complete, its object is to provide a kind of processing method of machined object, prevent
The only attachment to device chip for the abrasive particle.
According to the present invention, provide a kind of processing method of machined object, by the machined object of tabular along segmentation preset lines
It is divided into multiple device chips it is characterised in that the processing method of this machined object has following operation：Segmentation process, from
The front of this machined object forms the slot segmentation of the depth of completion thickness being equivalent to this device chip along this segmentation preset lines,
The back side of this machined object is carried out by grinding and so that this slot segmentation is exposed in this rear side, thus this machined object is divided into one
Each and every one this device chip；And grinding step, after implementing this segmentation process, this machined object is provided and does not wrap
This, while being ground to the back side of this machined object using the grinding pad comprising abrasive particle, is thus added by the lapping liquid containing abrasive particle
The grinding distortion at this back side of work thing removes, and the edge part of this device chip one by one split is processed into curved surface
Shape.
In the present invention, it is preferred to the processing method of this machined object also has Symmicton formation process, grind implementing this
After grinder sequence, form Symmicton at this back side of this machined object.
And, in the present invention, it is preferred to the Asker-C hardness of this grinding pad is 55 degree～90 degree, the compression of this grinding pad
Rate is 2%～15%, and the material of this abrasive particle included in this grinding pad is diamond, green carborundum, white fused alumina, titanium dioxide
Cerium or zirconium oxide, the particle diameter of this abrasive particle included in this grinding pad is 0.01 μm～10 μm.
And, in the present invention, it is preferred to this lapping liquid is aqueous slkali.
In the processing method of the machined object of the present invention, do not wrap due to providing to machined object in grinding step
Lapping liquid containing abrasive particle, while being ground to machined object using the grinding pad comprising abrasive particle, uses bag thus without there is picture
The conventional method of the lapping liquid containing abrasive particle like that, abrasive particle be attached to device chip side situation.
And, in the processing method of the machined object of the present invention, due in grinding step, by the edge of device chip
Curved is processed in portion, therefore, it is possible to the abundant rupture strength improving device chip.
Brief description
Fig. 1 is the stereogram schematically showing the situation that in segmentation process, machined object is formed with slot segmentation.
Fig. 2 is the stereogram schematically showing the situation that in segmentation process, machined object is pasted with guard block.
(B) of (A) of Fig. 3 and Fig. 3 is to schematically show the situation that in segmentation process, machined object is carried out with grinding
Side elevation in partial section.
(A) of Fig. 4 is the side elevation in partial section schematically showing grinding step, and (B) of Fig. 4 is to schematically show grinding
The sectional view of the machined object after operation.
Label declaration
11：Machined object；11a：Front；11b：The back side；13：Device；15：Slot segmentation；17：Device chip；17a：Edge
Portion；21：Guard block；21a：1st face；21b：2nd face；2：Topping machanism；4：Chuck table；6：Cutting unit；8：Main shaft
Housing；10：Cutting tool；12：Grinding attachment；14：Chuck table；14a：Holding face；16：Grinding unit；18：Main shaft shell
Body；20：Main shaft；22：Fixture；24：Grinding wheel；26：Wheel pedestal；28：Grinding grinding tool；32：Lapping device；34：Chucking work
Platform；34a：Holding face；36：Grinding unit；38：Main shaft housing；40：Main shaft；42：Fixture；44：Grinding pad.
Specific embodiment
Referring to the drawings embodiments of the present invention are illustrated.The processing method of the machined object of present embodiment comprises
Segmentation process (with reference to (A) of Fig. 1, Fig. 2, Fig. 3 and (B) of Fig. 3), grinding step (with reference to (A) of Fig. 4 and (B) of Fig. 4),
And Symmicton formation process.
In segmentation process, be equivalent to device core being formed along segmentation preset lines (spacing track) from the front of machined object
After the slot segmentation of depth of completion thickness of piece, grinding is carried out to the back side of machined object and makes slot segmentation overleaf side dew
Go out.Thus, machined object is processed relatively thin, and be divided into multiple device chips.
In grinding step, machined object is provided and does not comprise the lapping liquid of abrasive particle, while using comprising abrasive particle
Grinding pad is ground to the back side of machined object.Thus, the grinding distortion at the back side of machined object is removed, also by device core
The edge part of piece is processed into curved.In Symmicton formation process, form Symmicton at the back side of machined object.Hereinafter, right
The processing method of the machined object of present embodiment is described in detail.
First, implement machined object is divided into the segmentation process of multiple device chips.Fig. 1 is to schematically show in segmentation
In operation, machined object is formed with the stereogram of the situation of slot segmentation, Fig. 2 is to schematically show in segmentation process to processed
Thing pastes the stereogram of the situation of guard block, and (A) of Fig. 3 and (B) of Fig. 3 are to schematically show grinding quilt in segmentation process
The side elevation in partial section of the situation of machining object.
As shown in figure 1, the machined object 11 of present embodiment e.g. by the semi-conducting materials such as silicon formed discoid
Chip, its front 11a side is divided into the device area in central authorities and the periphery remaining area surrounding device area.Device area is in
The a plurality of segmentation preset lines (spacing track) of clathrate arrangement are further divided into multiple regions, are formed with IC, LSI in each region
Deng device 13.
In addition, in the present embodiment, the chip being formed by semi-conducting materials such as silicon is used as machined object 11, but is added
There is not restriction in the material of work thing 11, shape etc..For example, it is also possible to the substrate being formed by materials such as pottery, resin, metals is used
Make machined object 11.Equally, there is not restriction in species of the configuration of segmentation preset lines or device 13 etc. yet.
In the segmentation process of present embodiment, first, form slot segmentation in the front 11a side of this machined object 11.Point
Cut groove for example to be formed using the topping machanism 2 shown in Fig. 1.Topping machanism 2 has and machined object 11 is carried out attract, keeps
Chuck table 4.Chuck table 4 is (not shown) with rotary driving sources such as motor to be linked, around almost parallel with vertical
Rotary shaft rotation.
And, the lower section of chuck table 4 is provided with movable workbench mechanism (not shown), using this movable workbench
Mechanism makes chuck table 4 move in the horizontal direction.The upper surface of chuck table 4 becomes the back side to machined object 11
11b side carries out the holding face attracting, keeping.The negative pressure in attraction source (not shown) is by being formed at the inside of chuck table 4
Stream (not shown) etc. and act on this holding face, produce the attraction for attracting machined object 11.
It is configured with the cutting unit 6 that machined object 11 is cut above chuck table 4.Cutting unit 6 has
There is the main shaft housing 8 being supported on cutting unit travel mechanism (not shown).Be accommodated with motor in the inside of main shaft housing 8 etc.
The main shaft (not shown) that rotary driving source (not shown) links.
Main shaft rotates around the rotary shaft almost parallel with horizontal direction by the revolving force transmitting from rotary driving source, borrows
Cutting unit travel mechanism is helped together to move with main shaft housing 8.And, the one end of main shaft exposes in the outside of main shaft housing 8.
It is equipped with circular cutting tool 10 in the one end of this main shaft.
When forming slot segmentation, first, the back side 11b of machined object 11 is made to contact with the holding face of chuck table 4, and
The negative pressure in effect attraction source.Thus, machined object 11 attracted by chuck table 4 in the state of front 11a exposes upward,
Keep.
Then, so that chuck table 4 and cutting tool 10 is relatively moved, rotate, and so that cutting tool 10 is aligned and add
The corresponding position of segmentation preset lines of work object.Then, the cutting tool 10 making rotation drops to and is equivalent to the complete of device chip
The height of work thickness, makes chuck table 4 move to the parallel direction of the segmentation preset lines with processing object.
Thereby, it is possible to cut along the segmentation preset lines of processing object to the front 11a side of machined object 11, formed
Be equivalent to the slot segmentation 15 of the depth of completion thickness of device chip.When repeating this step and predetermined linear along all of segmentation
When becoming slot segmentation 15, the formation process of slot segmentation terminates.
After defining slot segmentation 15 in machined object 11, as shown in Fig. 2 the front 11a side in machined object 11
Paste guard block 21.Guard block 21 e.g. with the splicing tape of machined object 11 substantially similar shape, resin substrate with processed
Thing 11 is of the same race or the chip of xenogenesis etc., and its 1st face 21a side is provided with the adhesive linkage being formed by bonding agent etc..
Thus, by making the 1st face 21a side of the front 11a side contacts guard block 21 of machined object 11, and can will protect
Shield part 21 is pasted onto on machined object 11.So pass through on machined object 11 paste guard block 21, be prevented from because
The breakage of the device 13 that load applying during grinding etc. leads to.
After pasting guard block 21 on machined object 11, grinding is carried out to the back side 11b of machined object 11 and makes
Slot segmentation 15 exposes.The grinding of the machined object 11 such as grinding attachment 12 shown in (A) of Fig. 3 and (B) of Fig. 3 is implemented.Mill
Turning device 12 has the chuck table 14 machined object 11 being carried out attract, keep.
Chuck table 14 is (not shown) with rotary driving sources such as motor to be linked, around the rotation almost parallel with vertical
Rotating shaft rotates.And, the lower section of chuck table 14 is provided with movable workbench mechanism (not shown), is moved using this workbench
Motivation structure makes chuck table 14 move in the horizontal direction.
The upper surface of chuck table 14 becomes the 2nd face 21b side to the guard block 21 being pasted on machined object 11 and enters
The holding face 14a that row attracts, keeps.The negative pressure in attraction source (not shown) is by being formed at the stream of the inside of chuck table 14
(not shown) etc. and act on this holding face 14a, produce the attraction for attracting guard block 21.
It is configured with grinding unit 16 above chuck table 14.Grinding unit 16 have be supported on grinding unit lifting
The main shaft housing 18 of mechanism (not shown).It is accommodated with main shaft 20 in main shaft housing 18, be fixed with circle in the bottom of main shaft 20
The fixture 22 of plate-like.
It is equipped with the Grinding wheel 24 with the roughly the same diameter of fixture 22 in the lower surface of fixture 22.Grinding wheel 24 has
The wheel pedestal 26 being formed by metal materials such as stainless steel, aluminium.Multiple grinding grinding tools 28 are annularly arranged in the following table of wheel pedestal 26
On face.
The upper end side (base end side) of main shaft 20 is (not shown) with rotary driving sources such as motor to be linked.Grinding wheel 24 by from
The revolving force of this rotary driving source transmission and around almost parallel with vertical rotary shaft rotation.
When the back side 11b side to machined object 11 carries out grinding, first, make to be pasted on the guard block of machined object 11
21 the 2nd face 21b is contacted with the holding face 14a of chuck table 14, and acts on the negative pressure in attraction source.Thus, machined object 11
Overleaf the lateral top of 11b is attracted, is kept by chuck table 14 in the state of exposing.
Then, make the mobile lower section to Grinding wheel 24 of chuck table 14.And, as shown in (A) of Fig. 3, make chuck work
Station 14 and Grinding wheel 24 rotate respectively, provide the grinding fluids such as pure water so that main shaft housing 18 is declined.By main shaft housing
The lower surface that 18 slippage is adjusted to grinding grinding tool 28 pushes against the degree on the back side 11b of machined object 11.Thereby, it is possible to
Grinding is carried out to the back side 11b side of machined object 11.
For example measure the thickness of machined object 11 while carrying out this grinding.As shown in (B) of Fig. 3, when will be processed
Thing 11 is thinned to completion thickness, slot segmentation 15 when overleaf 11b side is exposed, and segmentation process terminates.To be added by this segmentation work
Work thing 11 is divided into multiple device chips 17 corresponding with each device 13.
After segmentation process, implement the grinding step that the back side 11b of machined object 11 is ground.(A) of Fig. 4 is
Schematically show the side elevation in partial section of grinding step.Lapping device 32 for example shown in (A) of Fig. 4 for the grinding step is real
Apply.Lapping device 32 has the chuck table 34 machined object 11 being carried out attract, keep.
Chuck table 34 is (not shown) with rotary driving sources such as motor to be linked, around the rotation almost parallel with vertical
Rotating shaft rotates.And, the lower section of chuck table 34 is provided with movable workbench mechanism (not shown), is moved using this workbench
Motivation structure makes chuck table 34 move in the horizontal direction.
The upper surface of chuck table 34 becomes the 2nd face 21b side to the guard block 21 being pasted on machined object 11 and enters
The holding face 34a that row attracts, keeps.The negative pressure in attraction source (not shown) is by being formed at the stream of the inside of chuck table 34
(not shown) etc. and act on this holding face 34a, produce the attraction for attracting guard block 21.
It is configured with grinding unit 36 above chuck table 34.Grinding unit 36 have be supported on grinding unit lifting
The main shaft housing 38 of mechanism (not shown).It is accommodated with main shaft 40 in main shaft housing 38, be fixed with circle in the bottom of main shaft 40
The fixture 42 of plate-like.
It is equipped with the grinding pad 44 with the roughly the same diameter of fixture 42 in the lower surface of fixture 42.This grinding pad 44
As being made up of abrasive cloth and abrasive particle, this abrasive cloth is formed by non-woven fabrics or foamed polyurethane etc., and this abrasive particle is fixed on abrasive cloth.Grind
The thickness of mill pad 44 is, for example, more than 3mm, and the groove for more than 2.5mm for the depth is formed at the lower surface of grinding pad 44 in clathrate
(abradant surface) is overall.
The hardness (Asker-C) of grinding pad 44 is preferably 55 degree～90 degree, and the compression ratio of grinding pad 44 preferably 2%～
15%.In addition, the thickness of the grinding pad 44 being applied with the case of the load of 300g/cm2 is set to t1,2000g/ will be applied with
The thickness of the grinding pad 44 in the case of the load of cm2 is set to t2, obtains compression ratio using (t1-t2)/t1 × 100.By inciting somebody to action
The compression ratio of grinding pad 44 is set to 2%～15% and higher grinding rate can be maintained to suppress machined object 11
The breach at edge.
And, the material of abrasive particle is, for example, diamond, green carborundum, white fused alumina, ceria, zirconium oxide etc., abrasive particle
For example, 0.01 μm～10 μm of particle diameter, preferably 0.1 μm～2 μm.But, the material of abrasive particle or the particle diameter of abrasive particle being capable of bases
Material of machined object 11 etc. and arbitrarily change.
The upper end side (base end side) of main shaft 40 is (not shown) with rotary driving sources such as motor to be linked.Grinding pad 44 by from
The revolving force of this rotary driving source transmission and around almost parallel with vertical rotary shaft rotation.
When the back side 11b to machined object 11 is ground, first, make to be pasted on the guard block 21 of machined object 11
The 2nd face 21b contact with the holding face 34a of chuck table 34, and act on the negative pressure in attraction source.Thus, machined object 11 exists
Back side 11b is attracted, is kept by chuck table 34 in the state of exposing lateral top.
Then, make the mobile lower section to grinding pad 44 of chuck table 34.And, as shown in (A) of Fig. 4, make chuck work
Station 34 and grinding pad 44 rotate respectively, provide lapping liquid so that main shaft housing 38 is declined.By under main shaft housing 38
The lower surface (abradant surface) that fall amount is adjusted to grinding pad 44 pushes against the degree on the back side 11b of machined object 11.Thereby, it is possible to
The back side 11b of machined object 11 is ground and removes grinding distortion.
As lapping liquid for example using the aqueous slkali not comprising abrasive particle.This is because when making lapping liquid comprise abrasive particle, mill
Grain easily residues in the slot segmentation 15 that overleaf 11b side is exposed.In the present embodiment, due to using the grinding comprising abrasive particle
Pad 44, even if therefore lapping liquid does not comprise abrasive particle and can suitably machined object 11 be ground yet.In addition, as aqueous slkali
Potassium hydroxide, NaOH, tetramethyl ammonium hydroxide (TMAH), potassium carbonate, sodium acid carbonate, saleratus etc. can be used.
(B) of Fig. 4 is the sectional view of the machined object 11 after schematically showing grinding step.Grinding in present embodiment
In operation, due to as described above, grinding machined object 11 using the lapping liquid not comprising abrasive particle, therefore abrasive particle will not adhere to
Side in the device chip 17 being equivalent to slot segmentation 15.And, in the grinding step of present embodiment, due to using under
Surface forms slotted grinding pad 44, therefore, it is possible to being processed into curved and improving device chip 17 further edge part 17a
Rupture strength.
After grinding step, the back side being implemented in machined object 11 forms the Symmicton formation process of Symmicton.For example
Implement Symmicton formation process using lapping device 32 used in grinding step using with grinding step identical method.
But, in this Symmicton formation process, the back side 11b making the lower surface (abradant surface) of grinding pad 44 and machined object 11 is not with
The mode of pushing and pressing contacts.That is, from grinding pad 44, pressure is not applied to machined object 11.
So, somewhat wipe the back side 11b of machined object 11 using grinding pad 44 and form the suction comprising trickle distortion
Diamicton.The pollution of device 13 that metallic element etc. leads to can be prevented by this Symmicton.Alternatively, it is also possible to make in segmentation process
The grinding distortion of middle formation somewhat remains, and becomes Symmicton.In this case it is not necessary to implement gettering after grinding step
Layer formation process.
As described above, in the processing method of the machined object of present embodiment, in grinding step, due to quilt
Machining object 11 provides the lapping liquid not comprising abrasive particle while grinding machined object 11 using the grinding pad 44 comprising abrasive particle, therefore
There is not the situation that abrasive particle as the conventional method using the lapping liquid comprising abrasive particle is attached to the side of device chip 17.
And, in the processing method of the machined object of present embodiment, due in grinding step, by device chip 17
Edge part 17a be processed into curved, therefore, it is possible to the abundant rupture strength improving device chip 17.
In addition, the invention is not restricted to the record of above-mentioned embodiment, various changes can be carried out and implement.And, it is above-mentioned
The construction of embodiment, method etc. can make suitably to change in the scope without departing from the purpose of the present invention and implement.
Claims (4)
1. a kind of processing method of machined object, the machined object of tabular is divided into multiple device cores along segmentation preset lines
Piece is it is characterised in that the processing method of this machined object has following operation：
Segmentation process, forms, from the front of this machined object, the completion thickness being equivalent to this device chip along this segmentation preset lines
Depth slot segmentation, the back side of this machined object is carried out by grinding and so that this slot segmentation is exposed in this rear side, thus should
Machined object is divided into this device chip one by one；And
Grinding step, after implementing this segmentation process, provides the lapping liquid one not comprising abrasive particle to this machined object
Side is ground to the back side of this machined object, thus by the mill at this back side of this machined object using the grinding pad comprising abrasive particle
Cut distortion to remove, and the edge part of this device chip one by one split is processed into curved.
2. machined object according to claim 1 processing method it is characterised in that
The processing method of this machined object also has Symmicton formation process, after implementing this grinding step, is added at this
This back side of work thing forms Symmicton.
3. machined object according to claim 1 and 2 processing method it is characterised in that
The Asker-C hardness of this grinding pad is 55 degree～90 degree,
The compression ratio of this grinding pad is 2%～15%,
The material of this abrasive particle included in this grinding pad is diamond, green carborundum, white fused alumina, ceria or oxidation
Zirconium,
The particle diameter of this abrasive particle included in this grinding pad is 0.01 μm～10 μm.
4. the machined object according to any one in claims 1 to 3 processing method it is characterised in that
This lapping liquid is aqueous slkali.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015153566A JP2017034128A (en) | 2015-08-03 | 2015-08-03 | Processing method for work piece |
| JP2015-153566 | 2015-08-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106409761A true CN106409761A (en) | 2017-02-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610616617.5A Pending CN106409761A (en) | 2015-08-03 | 2016-07-29 | Workpiece processing method |
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| Country | Link |
|---|---|
| JP (1) | JP2017034128A (en) |
| KR (1) | KR20170016284A (en) |
| CN (1) | CN106409761A (en) |
| TW (1) | TW201712746A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164820A (en) * | 2018-02-14 | 2019-08-23 | 株式会社迪思科 | The method for handling wafer |
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| JP2006080329A (en) * | 2004-09-10 | 2006-03-23 | Disco Abrasive Syst Ltd | Chemical mechanical polishing equipment |
| JP2010182753A (en) * | 2009-02-03 | 2010-08-19 | Disco Abrasive Syst Ltd | Method for dividing wafer |
| JP2013235876A (en) * | 2012-05-02 | 2013-11-21 | Disco Abrasive Syst Ltd | Wafer processing method |
| JP2015046550A (en) * | 2013-08-29 | 2015-03-12 | 株式会社ディスコ | Polishing pad and processing method of wafer |
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|---|---|---|---|---|
| JPS624341A (en) | 1985-06-29 | 1987-01-10 | Toshiba Corp | Manufacture of semiconductor device |
| JP3464388B2 (en) | 1998-07-01 | 2003-11-10 | 株式会社東芝 | Semiconductor wafer splitting method |
| JP2005311025A (en) * | 2004-04-21 | 2005-11-04 | Naoetsu Electronics Co Ltd | Manufacturing method of silicon wafer, and the silicon wafer manufactured thereby |
| JP4885548B2 (en) * | 2006-01-20 | 2012-02-29 | 株式会社ディスコ | Wafer polishing method |
-
2015
- 2015-08-03 JP JP2015153566A patent/JP2017034128A/en active Pending
-
2016
- 2016-07-05 TW TW105121235A patent/TW201712746A/en unknown
- 2016-07-26 KR KR1020160094694A patent/KR20170016284A/en unknown
- 2016-07-29 CN CN201610616617.5A patent/CN106409761A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006080329A (en) * | 2004-09-10 | 2006-03-23 | Disco Abrasive Syst Ltd | Chemical mechanical polishing equipment |
| JP2010182753A (en) * | 2009-02-03 | 2010-08-19 | Disco Abrasive Syst Ltd | Method for dividing wafer |
| JP2013235876A (en) * | 2012-05-02 | 2013-11-21 | Disco Abrasive Syst Ltd | Wafer processing method |
| JP2015046550A (en) * | 2013-08-29 | 2015-03-12 | 株式会社ディスコ | Polishing pad and processing method of wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164820A (en) * | 2018-02-14 | 2019-08-23 | 株式会社迪思科 | The method for handling wafer |
| CN110164820B (en) * | 2018-02-14 | 2023-11-14 | 株式会社迪思科 | Method for processing wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017034128A (en) | 2017-02-09 |
| TW201712746A (en) | 2017-04-01 |
| KR20170016284A (en) | 2017-02-13 |
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Application publication date: 20170215 |