CN106230417B - SOI RF switch structure and integrated circuit - Google Patents
SOI RF switch structure and integrated circuit Download PDFInfo
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- CN106230417B CN106230417B CN201610596338.7A CN201610596338A CN106230417B CN 106230417 B CN106230417 B CN 106230417B CN 201610596338 A CN201610596338 A CN 201610596338A CN 106230417 B CN106230417 B CN 106230417B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
A kind of SOI RF switch structure and integrated circuit.SOI RF switch structure includes the first branch and second branch.And, the SOI RF switch structure further includes extra transistor, wherein the source electrode and drain electrode of extra transistor is connected by the 5th resistor, and the grid of extra transistor, source electrode and drain electrode are respectively connected to the grid of first MOS transistor of second branch, source electrode and drain electrode.In the present invention, the basic structure of RF switch includes road and the parallel branch of series connection；The present invention increases transistor arrangement in parallel in the first order on chord road in parallel and/or the second level, so that voltage distribution is more uniform, so that the capacitor of the first order and/or the second level becomes larger, so that partial pressure becomes smaller.
Description
Technical field
The present invention relates to semiconductor circuit design and semiconductor circuit manufacturing fields；It is more particularly related to one
Kind SOI RF switch structure, and the invention further relates to a kind of integrated circuits comprising this SOI RF switch structure.
Background technique
Silicon materials are the most widely used main raw material(s)s of semicon industry, and most of chips are manufactured with silicon wafer.
Silicon-on-insulator (SOI, Silicon-on-insulator) is a kind of special silicon wafer, and structure is mainly characterized by active
Insertion insulating layer (buried oxide layer) separates the electrical connection between active layer and substrate between layer and substrate layer, this knot
Structure feature is that the device of silicon-on-insulator class brings that ghost effect is small, speed is fast, low in energy consumption, integrated level is high, capability of resistance to radiation
Many advantages, such as strong.
Generally, on insulator middle silicon by as active layer silicon top layer, as the buried oxide layer of insulating layer, as branch
Support the silicon substrate layer composition of layer.Wherein, circuit is formed in silicon top layer (active layer).Silicon substrate layer is generally thicker, mainly makees
With being to provide mechanical support for two layers (that is, silicon top layer and buried oxide layer) above.
Fig. 1 schematically shows the structural schematic diagram of SOI RF switch structure according to prior art.Specific such as Fig. 1
Shown, SOI RF switch structure generally comprises according to prior art: the first branch and second branch.
Wherein, the first branch includes that adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Drain electrode multiple MOS transistors for being successively arranged side by side of mode, wherein the source electrode and drain electrode of each MOS transistor pass through it is respective
First resistor device R1 connection, the grid of each MOS transistor passes through respective second resistor R2 connection primary grid voltage
Vg, the drain electrode of first MOS transistor are connected to input signal RF_in, and the source electrode of the last one MOS transistor connects antenna
100；
Wherein, second branch includes that adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Drain electrode multiple MOS transistors for being successively arranged side by side of mode, wherein the source electrode and drain electrode of each MOS transistor pass through it is respective
The 4th resistor R4 connection, the grid of each MOS transistor passes through respective second resistor R2 connection second grid voltage
Vgn, the drain electrode of first MOS transistor are connected to input signal RF_in, the source electrode ground connection of the last one MOS transistor.
Wherein, at Vg=-VDD (supply voltage of VDD expression integrated circuit), SOI RF switch structure, which is in, to be disconnected
State.
But for SOI RF switch structure according to prior art shown in FIG. 1, there are each MOS transistor grade it
Between voltage bias be distributed unbalanced problem (as shown in Figure 2).And voltage bias distribution imbalance can further influence electricity
The power handling capability (power handle capability) on road.
It is distributed not accordingly, it is desirable to be capable of providing the voltage bias that one kind can be effectively improved between each MOS transistor grade
The SOI RF switch structure of equilibrium problem.
Summary of the invention
The technical problem to be solved by the present invention is to for drawbacks described above exists in the prior art, providing one kind can be effective
Improve the SOI RF switch structure of the voltage bias distribution imbalance problem between each MOS transistor grade.
In order to achieve the above technical purposes, according to the present invention, a kind of SOI RF switch structure is provided, comprising: first
Road and second branch；Wherein, the first branch includes that adjacent the latter MOS is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that the mode of the drain electrode of transistor is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor is logical
Respective first resistor device connection is crossed, the grid of each MOS transistor connects first grid electricity by respective second resistor
Pressure, the drain electrode of first MOS transistor are connected to input signal, and the source electrode of the last one MOS transistor connects antenna；Wherein,
Second branch includes in the way of being connected to the drain electrode of adjacent the latter MOS transistor by the source electrode of previous MOS transistor
The multiple MOS transistors being successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective 3rd resistor device
The grid of connection, each MOS transistor connects second grid voltage, first MOS transistor by respective 4th resistor
Drain electrode be connected to input signal, the source electrode of the last one MOS transistor ground connection；Moreover, the SOI RF switch structure also wraps
Extra transistor is included, wherein the source electrode and drain electrode of extra transistor is connected by the 5th resistor, and the grid of extra transistor
Pole, source electrode and drain electrode are respectively connected to the grid of first MOS transistor of second branch, source electrode and drain electrode；Wherein, first
The substrate of each MOS transistor of road and second branch passes through resistance eutral grounding.
Moreover, in order to achieve the above technical purposes, according to the present invention, providing a kind of SOI RF switch structure, comprising:
The first branch and second branch；Wherein, the first branch include be connected to according to the source electrode of previous MOS transistor it is adjacent latter
Multiple MOS transistors that the mode of the drain electrode of a MOS transistor is successively arranged side by side, wherein the source electrode of each MOS transistor and
Drain electrode is connected by respective first resistor device, and the grid of each MOS transistor passes through respective second resistor connection first
The drain electrode of grid voltage, first MOS transistor is connected to input signal, and the source electrode of the last one MOS transistor connects antenna；
Wherein, second branch includes that the drain electrode of adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that mode is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective third electricity
Device connection is hindered, the grid of each MOS transistor connects second grid voltage, first MOS crystalline substance by respective 4th resistor
The drain electrode of body pipe is connected to input signal, the source electrode ground connection of the last one MOS transistor；Moreover, the SOI RF switch structure
It further include two extra transistors, wherein the source electrode and drain electrode of each extra transistor is connected by the 5th resistor, Er Qie
The grid of one extra transistor, source electrode and drain electrode are respectively connected to grid, the source electrode of first MOS transistor of second branch
And drain electrode, the grid of second extra transistor, source electrode and drain electrode are respectively connected to second MOS transistor of second branch
Grid, source electrode and drain electrode；Wherein, the substrate of each MOS transistor of the first branch and second branch passes through resistance eutral grounding.
Moreover, in order to achieve the above technical purposes, according to the present invention, providing a kind of SOI RF switch structure, comprising:
The first branch and second branch；Wherein, the first branch include be connected to according to the source electrode of previous MOS transistor it is adjacent latter
Multiple MOS transistors that the mode of the drain electrode of a MOS transistor is successively arranged side by side, wherein the source electrode of each MOS transistor and
Drain electrode is connected by respective first resistor device, and the grid of each MOS transistor passes through respective second resistor connection first
The drain electrode of grid voltage, first MOS transistor is connected to input signal, and the source electrode of the last one MOS transistor connects antenna；
Wherein, second branch includes that the drain electrode of adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that mode is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective third electricity
Device connection is hindered, the grid of each MOS transistor connects second grid voltage, first MOS crystalline substance by respective 4th resistor
The drain electrode of body pipe is connected to input signal, the source electrode ground connection of the last one MOS transistor；Moreover, SOI RF switch structure also wraps
Two extra transistors are included, wherein the source electrode and drain electrode of each extra transistor is connected by the 5th resistor；And first
The grid and source electrode of extra transistor are respectively connected to the grid and source electrode of first MOS transistor of second branch, and first
The drain electrode of extra transistor is connected to the source electrode of first MOS transistor of the first branch；The grid of second extra transistor,
Source electrode and drain electrode is respectively connected to the grid of second MOS transistor of second branch, source electrode and drain electrode；Wherein, the first branch
Pass through resistance eutral grounding with the substrate of each MOS transistor of second branch.
Preferably, the resistance value of all first resistor devices is equal, and wherein the resistance value of first resistor device between 10K Ω
To between 100K Ω.
Preferably, the resistance value of all second resistors is equal, and wherein the resistance value of second resistor between 10K Ω
To between 100K Ω.
Preferably, the resistance value of all 3rd resistor devices is equal, and wherein the resistance value of 3rd resistor device between 10K Ω
To between 100K Ω.
Preferably, the resistance value of all 4th resistors is equal, and wherein the resistance value of the 4th resistor between 10K Ω
To between 100K Ω.
Preferably, the resistance value of all 5th resistors is equal, and wherein the resistance value of the 5th resistor between 10K Ω
To between 100K Ω.
Preferably, the resistance value of all 6th resistors is equal, and wherein the resistance value of the 6th resistor between 10K Ω
To between 100K Ω.
Moreover, in order to achieve the above technical purposes, according to the present invention, providing a kind of includes above-mentioned SOI RF switch knot
The integrated circuit of structure.
In the present invention, the basic structure of RF switch includes road and the parallel branch of series connection；The present invention is in chord in parallel
The first order on road and/or the second level increase transistor arrangement in parallel, so that voltage distribution is more uniform, so that the first order
And/or the capacitor of the second level becomes larger, so that partial pressure becomes smaller.Using SOI RF switch structure according to the preferred embodiment of the invention,
The voltage bias distribution imbalance problem that can be effectively improved between each MOS transistor grade.
Detailed description of the invention
In conjunction with attached drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And its adjoint advantage and feature is more easily to understand, in which:
Fig. 1 schematically shows the structural schematic diagram of SOI RF switch structure according to prior art.
Fig. 2 schematically shows the distributions of the unbalance voltage of SOI RF switch structure according to prior art.
Fig. 3 schematically shows the structural representation of the SOI RF switch structure of first preferred embodiment according to the present invention
Figure.
Fig. 4 schematically shows the structural representations of the SOI RF switch structure of the second preferred embodiment according to the present invention
Figure.
Fig. 5 schematically shows the structural representation of the SOI RF switch structure of third preferred embodiment according to the present invention
Figure.
It should be noted that attached drawing is not intended to limit the present invention for illustrating the present invention.Note that indicating that the attached drawing of structure can
It can be not necessarily drawn to scale.Also, in attached drawing, same or similar element indicates same or similar label.
Specific embodiment
In order to keep the contents of the present invention more clear and understandable, combined with specific embodiments below with attached drawing in of the invention
Appearance is described in detail.
Fig. 3 schematically shows the structural representation of the SOI RF switch structure of first preferred embodiment according to the present invention
Figure.
As shown in figure 3, SOI RF switch structure according to the preferred embodiment of the invention includes: the first branch and second
Road.
Wherein, the first branch includes that adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Drain electrode multiple MOS transistors for being successively arranged side by side of mode, wherein the source electrode and drain electrode of each MOS transistor pass through it is respective
First resistor device R1 connection, the grid of each MOS transistor passes through respective second resistor R2 connection primary grid voltage
Vg, the drain electrode of first MOS transistor are connected to input signal RF_in, and the source electrode of the last one MOS transistor connects antenna
100；
Wherein, second branch includes that adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Drain electrode multiple MOS transistors for being successively arranged side by side of mode, wherein the source electrode and drain electrode of each MOS transistor pass through it is respective
The R3 connection of 3rd resistor device, the grid of each MOS transistor passes through respective 4th resistor R4 connection second grid voltage
Vgn, the drain electrode of first MOS transistor are connected to input signal RF_in, the source electrode ground connection of the last one MOS transistor.
Wherein, SOI RF switch structure further includes extra transistor M1, and wherein the source electrode and drain electrode of extra transistor M1 is logical
The 5th resistor R5 connection is crossed, and the grid of extra transistor M1, source electrode and drain electrode are respectively connected to the first of second branch
The grid of a MOS transistor, source electrode and drain electrode.
It should be noted that the substrate of each MOS transistor is also required to through big resistance eutral grounding, in attached drawing for clarity
And omit this connection structure.
In the present invention, the basic structure of RF switch includes road and the parallel branch of series connection；The present invention is in chord in parallel
The first order on road and/or the second level increase transistor arrangement in parallel, so that voltage distribution is more uniform, so that the first order
And/or the capacitor of the second level becomes larger, so that partial pressure becomes smaller.Using SOI RF switch structure according to the preferred embodiment of the invention,
The voltage bias distribution imbalance problem that can be effectively improved between each MOS transistor grade.
Fig. 4 schematically shows the structural representations of the SOI RF switch structure of the second preferred embodiment according to the present invention
Figure.
Unlike the first preferred embodiment of Fig. 3, wherein SOI RF switch structure further includes two additional transistors
Pipe M1, wherein the source electrode and drain electrode of each extra transistor M1 passes through the 5th resistor R5 connection, and first additional transistor
The grid of pipe, source electrode and drain electrode are respectively connected to the grid of first MOS transistor of second branch, source electrode and drain electrode, and second
The grid of a extra transistor, source electrode and drain electrode be respectively connected to the grid of second MOS transistor of second branch, source electrode and
Drain electrode.
Equally, in the present invention, the basic structure of RF switch includes road and the parallel branch of series connection；The present invention is in parallel connection
The first order on chord road and/or the second level increase transistor arrangement in parallel, so that voltage distribution is more uniform, so that the
The capacitor of level-one and/or the second level becomes larger, so that partial pressure becomes smaller.Utilize SOI RF switch according to the preferred embodiment of the invention
Structure, the voltage bias distribution imbalance problem that can be effectively improved between each MOS transistor grade.
As can be seen that the present invention can also be extended to including for several transistor layouts before second branch more
More extra transistors.
Fig. 5 schematically shows the structural representation of the SOI RF switch structure of third preferred embodiment according to the present invention
Figure.
Unlike the first preferred embodiment of Fig. 3, wherein SOI RF switch structure further includes two additional transistors
Pipe M1, wherein the source electrode and drain electrode of each extra transistor M1 passes through the 5th resistor R5 connection；And first additional transistor
The grid and source electrode of pipe are respectively connected to the grid and source electrode of first MOS transistor of second branch, first additional transistor
The drain electrode of pipe is connected to the source electrode of first MOS transistor of the first branch；Grid, source electrode and the leakage of second extra transistor
Pole is respectively connected to the grid of second MOS transistor of second branch, source electrode and drain electrode.
Equally, in the present invention, the basic structure of RF switch includes road and the parallel branch of series connection；The present invention is in parallel connection
The first order on chord road and/or the second level increase transistor arrangement in parallel, so that voltage distribution is more uniform, so that the
The capacitor of level-one and/or the second level becomes larger, so that partial pressure becomes smaller.Utilize SOI RF switch according to the preferred embodiment of the invention
Structure, the voltage bias distribution imbalance problem that can be effectively improved between each MOS transistor grade.
Preferably, the resistance value of all first resistor device R1 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each first resistor device R1 can be unequal.
Preferably, the resistance value of all second resistor R2 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each second resistor R2 can be unequal.
Preferably, the resistance value of all 3rd resistor device R3 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each 3rd resistor device R3 can be unequal.
Preferably, the resistance value of all 4th resistor R4 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each 3rd resistor device R3 can be unequal.
Preferably, the resistance value of all 5th resistor R5 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each 3rd resistor device R3 can be unequal.
Preferably, the resistance value of all 6th resistor R6 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each 3rd resistor device R3 can be unequal.
Preferably, all first resistor device R1, all second resistor R2, all 3rd resistor device R3, the 4th resistor
The resistance value of R4, the 5th resistor R5 and the 6th resistor R6 are roughly equal.Certainly, it is preferred that these resistor resistance values are equal
Scheme；And in a particular embodiment, the resistance value of all first resistor devices, all second resistors and all 3rd resistor devices
It can also be unequal.
In addition, including mentioned-above SOI the present invention also provides one kind in other specific embodiments of the invention
The integrated circuit of RF switch structure.
It should be noted that unless stated otherwise or point out, the otherwise term " first " in specification, " second ", "
The descriptions such as three " are used only for distinguishing various components, element, step etc. in specification, without being intended to indicate that various components, member
Logical relation or ordinal relation between element, step etc..
It is understood that although the present invention has been disclosed in the preferred embodiments as above, above-described embodiment not to
Limit the present invention.For any person skilled in the art, without departing from the scope of the technical proposal of the invention,
Many possible changes and modifications all are made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as
With the equivalent embodiment of variation.Therefore, anything that does not depart from the technical scheme of the invention are right according to the technical essence of the invention
Any simple modifications, equivalents, and modifications made for any of the above embodiments still fall within the range of technical solution of the present invention protection
It is interior.
Claims (10)
1. a kind of SOI RF switch structure, characterized by comprising: the first branch and second branch；The first branch is institute
The series arm of SOI RF switch structure is stated, the second branch is the parallel branch of the SOI RF switch structure；
Wherein, the first branch includes that the leakage of adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that the mode of pole is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective the
The connection of one resistor, the grid of each MOS transistor is by respective second resistor connection primary grid voltage, and first
The drain electrode of MOS transistor is connected to input signal, and the source electrode of the last one MOS transistor connects antenna；
Wherein, second branch includes that the leakage of adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that the mode of pole is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective the
The connection of three resistors, the grid of each MOS transistor connect second grid voltage by respective 4th resistor, and first
The drain electrode of MOS transistor is connected to input signal, the source electrode ground connection of the last one MOS transistor；
Moreover, the SOI RF switch structure further includes the only increased extra transistor in the first order of the second branch,
Wherein the source electrode and drain electrode of extra transistor is connected by the 5th resistor, and the grid of extra transistor, source electrode and drain electrode
It is respectively connected to grid, the source electrode and drain electrode of first MOS transistor of second branch；
Wherein, the substrate of each MOS transistor of the first branch and second branch passes through resistance eutral grounding.
2. a kind of SOI RF switch structure, characterized by comprising: the first branch and second branch；The first branch is institute
The series arm of SOI RF switch structure is stated, the second branch is the parallel branch of the SOI RF switch structure；
Wherein, the first branch includes that the leakage of adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that the mode of pole is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective the
The connection of one resistor, the grid of each MOS transistor is by respective second resistor connection primary grid voltage, and first
The drain electrode of MOS transistor is connected to input signal, and the source electrode of the last one MOS transistor connects antenna；
Wherein, second branch includes that the leakage of adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that the mode of pole is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective the
The connection of three resistors, the grid of each MOS transistor connect second grid voltage by respective 4th resistor, and first
The drain electrode of MOS transistor is connected to input signal, the source electrode ground connection of the last one MOS transistor；
Moreover, the SOI RF switch structure further includes only increased two in the first order of the second branch and the second level
A extra transistor, wherein the source electrode and drain electrode of each extra transistor is connected by the 5th resistor, and first additional
The grid of transistor, source electrode and drain electrode are respectively connected to the grid of first MOS transistor of second branch, source electrode and drain electrode,
The grid of second extra transistor, source electrode and drain electrode are respectively connected to the grid of second MOS transistor of second branch, source
Pole and drain electrode；
Wherein, the substrate of each MOS transistor of the first branch and second branch passes through resistance eutral grounding.
3. a kind of SOI RF switch structure, characterized by comprising: the first branch and second branch；The first branch is institute
The series arm of SOI RF switch structure is stated, the second branch is the parallel branch of the SOI RF switch structure；
Wherein, the first branch includes that the leakage of adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that the mode of pole is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective the
The connection of one resistor, the grid of each MOS transistor is by respective second resistor connection primary grid voltage, and first
The drain electrode of MOS transistor is connected to input signal, and the source electrode of the last one MOS transistor connects antenna；
Wherein, second branch includes that the leakage of adjacent the latter MOS transistor is connected to according to the source electrode of previous MOS transistor
Multiple MOS transistors that the mode of pole is successively arranged side by side, wherein the source electrode and drain electrode of each MOS transistor passes through respective the
The connection of three resistors, the grid of each MOS transistor connect second grid voltage by respective 4th resistor, and first
The drain electrode of MOS transistor is connected to input signal, the source electrode ground connection of the last one MOS transistor；
Moreover, SOI RF switch structure further include only in the first order of the second branch and the second level increased two it is attached
Add transistor, wherein the source electrode and drain electrode of each extra transistor is connected by the 5th resistor；And first additional transistor
The grid and source electrode of pipe are respectively connected to the grid and source electrode of first MOS transistor of second branch, first additional transistor
The drain electrode of pipe is connected to the source electrode of first MOS transistor of the first branch；Grid, source electrode and the leakage of second extra transistor
Pole is respectively connected to the grid of second MOS transistor of second branch, source electrode and drain electrode；
Wherein, the substrate of each MOS transistor of the first branch and second branch passes through resistance eutral grounding.
4. according to claim 1 to SOI RF switch structure described in one of 3, which is characterized in that the electricity of all first resistor devices
Resistance value is equal, and wherein the resistance value of first resistor device between 10K Ω to 100K Ω.
5. according to claim 1 to SOI RF switch structure described in one of 3, which is characterized in that the electricity of all second resistors
Resistance value is equal, and wherein the resistance value of second resistor between 10K Ω to 100K Ω.
6. according to claim 1 to SOI RF switch structure described in one of 3, which is characterized in that the electricity of all 3rd resistor devices
Resistance value is equal, and wherein the resistance value of 3rd resistor device between 10K Ω to 100K Ω.
7. according to claim 1 to SOI RF switch structure described in one of 3, which is characterized in that the electricity of all 4th resistors
Resistance value is equal, and wherein the resistance value of the 4th resistor between 10K Ω to 100K Ω.
8. according to claim 1 to SOI RF switch structure described in one of 3, which is characterized in that the electricity of all 5th resistors
Resistance value is equal, and wherein the resistance value of the 5th resistor between 10K Ω to 100K Ω.
9. according to claim 1 to SOI RF switch structure described in one of 3, which is characterized in that the electricity of all 6th resistors
Resistance value is equal, and wherein the resistance value of the 6th resistor between 10K Ω to 100K Ω.
10. a kind of including according to claim 1 to the integrated circuit of SOI RF switch structure described in one of 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023235116A1 (en) * | 2022-06-03 | 2023-12-07 | Psemi Corporation | Methods and devices for fast switching of radio frequency switches |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106888009B (en) * | 2017-02-14 | 2021-03-23 | 上海华虹宏力半导体制造有限公司 | Differential transceiving radio frequency switch and radio frequency terminal |
| CN109088626B (en) * | 2018-07-21 | 2022-05-24 | 安徽矽磊电子科技有限公司 | Ultralow-power-consumption biased radio frequency switch |
| CN113659932B (en) * | 2021-10-21 | 2021-12-24 | 成都明夷电子科技有限公司 | High-frequency high-power SOI radio frequency transceiving switch |
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| WO2009108391A1 (en) * | 2008-02-28 | 2009-09-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device |
| US9214932B2 (en) * | 2013-02-11 | 2015-12-15 | Triquint Semiconductor, Inc. | Body-biased switching device |
| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
| CN105162444A (en) * | 2015-09-12 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Radio frequency switch body bias circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023235116A1 (en) * | 2022-06-03 | 2023-12-07 | Psemi Corporation | Methods and devices for fast switching of radio frequency switches |
| US11848666B1 (en) | 2022-06-03 | 2023-12-19 | Psemi Corporation | Methods and devices for fast switching of radio frequency switches |
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