CN106229294A - A kind of manufacture method of TFT substrate - Google Patents
A kind of manufacture method of TFT substrate Download PDFInfo
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- CN106229294A CN106229294A CN201610794102.4A CN201610794102A CN106229294A CN 106229294 A CN106229294 A CN 106229294A CN 201610794102 A CN201610794102 A CN 201610794102A CN 106229294 A CN106229294 A CN 106229294A
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- photoresistance
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 89
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 239000011241 protective layer Substances 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000004380 ashing Methods 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 42
- 239000012212 insulator Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000008034 disappearance Effects 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 241000222065 Lycoperdon Species 0.000 description 1
- 241000768494 Polymorphum Species 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses the manufacture method of a kind of TFT substrate.The method uses halftone mask or gray tone light shield as the 3rd road light shield, protective layer and pixel electrode layer are carried out photoetching, remove the photoresistance in the position of via to be formed, make the surface exposure of protective layer out, and make the photoresistance in the position of pixel electrode to be formed have relatively thin thickness and the photoresistance in the position of channel-shaped figure to be formed has thicker thickness, then pass through ashing and process removal part photoresistance, then on the exposed surface of residue photoresistance and other each layer, cover transparent conductive semiconductor film, it is finally peeled away residue photoresistance and the transparent conductive semiconductor film of upper deposition thereof, so that remaining transparent conductive semiconductor film forms the pixel electrode with channel-shaped figure, and be electrically connected with source-drain electrode.
Description
Technical field
The present invention relates to technical field of liquid crystal display, particularly relate to the manufacture method of a kind of thin film transistor (TFT) (TFT) substrate.
Background technology
Along with the development of Display Technique, Thin Film Transistor-LCD (Thin Film Transistor Liquid
Crystal Display, is called for short TFT-LCD) have become as display device important in modern IT, video product.
Thin film transistor (TFT) TFT is the important component part of panel display apparatus, can be made in glass substrate or plastic base
On, as switching device or driving element.Existing TFT substrate structure include substrate, grid, gate insulator, semiconductor layer,
It is positioned at the source electrode of same layer and drain the source-drain electrode layer constituted and pixel electrode layer etc..During making TFT substrate,
In addition to substrate, the formation of each Rotating fields is required to by one lithographic process, i.e. by include film forming, gold-tinted etch,
The series of processes such as stripping.Wherein, gold-tinted processing procedure further includes being coated with photoresistance, exposing, develop, and every one gold-tinted system
Journey needs corresponding light shield.It is said that in general, the processing procedure of whole TFT substrate needs five road light shields (5mask).But, too much light
Cover number of times can increase processing procedure cost, will also result in the long accumulation with yield issues of process flow simultaneously, makes production efficiency big
Big reduction.In order to reach to reduce the purpose of light shield quantity, a lot of companies develop four road light shield (4mask) technology one after another, will wherein
Semiconductor layer and source-drain electrode layer together with halftoning half-tone (HTM) or gray tone gray tone (GTM) light shield simultaneously
Formed.HTM or GTM light shield can make photoresistance obtain two kinds of different thickness, and both thickness can be used to define partly lead respectively
Body layer and the pattern of source-drain electrode layer.
Additionally, in order to reduce light shield quantity further, ITO layer and PV layer can be passed through by peeling off Lift-off technique
One light shield concurrently forms, so that light shield sum is decreased to three (3mask).But, current existing 3mask processing procedure skill
Art is mostly just for TN pattern.In such a mode, ITO layer can not form channel-shaped figure slit；Even if or ITO defines slit
Figure, but owing to ITO can only be deposited on place of digging a hole so that whole ITO layer (including pixel region part) is at the recessed of SiNx
In groove.So can weaken ITO transverse electric field, affect liquid crystal display effect, form mottle.
Summary of the invention
For the problems referred to above, the invention provides the manufacture method of a kind of new TFT substrate, it is intended to ensure liquid crystal display effect
The processing procedure operation of TFT substrate is shortened on the premise of Guo.
The manufacture method of a kind of TFT substrate, it is characterised in that comprise the following steps:
Step one, deposits the first metal layer on substrate, utilizes the mask patterning the first metal layer of first so that it is formed
Grid；
Step 2, deposits gate insulator so that it is cover substrate and the grid of surface on substrate；
Step 3, deposited semiconductor layer and the second metal level on gate insulator, utilize second mask patterning half
Conductor layer and the second metal level so that it is form semiconductor region and source-drain electrode respectively；
Step 4, deposits protective layer so that it is cover above gate insulator and gate insulator on gate insulator
Semiconductor region and source-drain electrode；
Step 5, deposits photoresist layer on the protection layer, utilizes the 3rd mask patterning photoresist layer in road, in order to removes and is being intended to shape
Become the photoresistance of the position of via so that the surface exposure of protective layer out, and makes in the position of pixel electrode to be formed
The photoresistance at place has relatively thin thickness so that the photoresistance in the position of channel-shaped figure to be formed has thicker thickness；
Step 6, removes the protective layer in the position of via to be formed, and forms via so that the surface exposure of source-drain electrode
Out, in order to can be electrically connected with pixel electrode afterwards；
Step 7, carries out ashing process to photoresist layer so that partial disappearance and thickness that the thickness of photoresist layer is relatively thin are thicker
Parts thinner；
Step 8, deposited semiconductor nesa coating on the surface of the photoresist layer remained and the exposure of other each layer；
Step 9, the photoresist layer removing residual and the transparent conductive semiconductor film deposited on it, so that remaining
Transparent conductive semiconductor film forms the pixel electrode with channel-shaped figure, and is electrically connected with source-drain electrode；
According to embodiments of the invention, above-mentioned second light shield and the 3rd road light shield are halftone mask or Lycoperdon polymorphum Vitt light modulation
Cover.
According to embodiments of the invention, in above-mentioned steps six, dry etching is used to remove in the position of via to be formed
Protective layer.
According to embodiments of the invention, in above-mentioned steps seven, utilize oxygen gas plasma that photoresist layer is carried out ashing process.
According to embodiments of the invention, in above-mentioned steps eight, use physical vaporous deposition residual photoresist layer and
Transparent conductive semiconductor film is sputtered on the surface of the exposure of other each layer.
According to embodiments of the invention, in above-mentioned steps nine, stripping technology is used to remove photoresist layer and the photoresistance of residual
The transparent conductive semiconductor film of deposition on layer.
Preferably, by using stripper to soak photoresist layer so that the photoresistance of residual is peeled off, and takes away on photoresistance simultaneously
Transparent conductive semiconductor film.
Further, first to photoresist layer irradiating laser or ultraviolet, after expanding after making photoresistance extinction, re-use stripper leaching
Bubble photoresist layer.
According to embodiments of the invention, the material of above-mentioned protective layer is SiO2Or SiON.
The present invention uses halftone mask or gray tone light shield as the 3rd road light shield, enters protective layer and pixel electrode layer
Row photoetching, removes the photoresistance in the position of via to be formed so that the surface exposure of protective layer out, and makes be intended to shape
The photoresistance of the position of pixel electrode has relatively thin thickness so that the photoresistance in the position of channel-shaped figure to be formed has
Thicker thickness, then passes through ashing and processes removal part photoresistance, then on the exposed surface of residue photoresistance and other each layer
Cover transparent conductive semiconductor film, be finally peeled away residue photoresistance and the transparent conductive semiconductor film of upper deposition thereof, so that surplus
Remaining transparent conductive semiconductor film forms the pixel electrode with channel-shaped figure, and is electrically connected with source-drain electrode.The present invention
Method reduce the light shield quantity used in TFT substrate processing procedure, improve production efficiency, and do not interfere with display effect
Really.
Other features and advantages of the present invention will illustrate in the following description, and, becoming from description of part
Obtain it is clear that or understand by implementing the present invention.The purpose of the present invention and other advantages can be by description, rights
Structure specifically noted in claim and accompanying drawing realizes and obtains.
Accompanying drawing explanation
For the technical scheme in the clearer explanation embodiment of the present invention, required in embodiment being described below
Accompanying drawing does simply to be introduced:
Fig. 1 is the workflow diagram of the manufacture method of the TFT substrate that the present invention proposes；
Fig. 2 is the hierarchical structure that step one to the step 4 of the manufacture method in the embodiment of the present invention according to Fig. 1 is obtained
Schematic diagram；
Fig. 3 is the hierarchical structure schematic diagram that the step 5 of the manufacture method in the embodiment of the present invention according to Fig. 1 is obtained；
Fig. 4 is the hierarchical structure schematic diagram that the step 6 of the manufacture method in the embodiment of the present invention according to Fig. 1 is obtained；
Fig. 5 is the hierarchical structure schematic diagram that the step 7 of the manufacture method in the embodiment of the present invention according to Fig. 1 is obtained；
Fig. 6 is the hierarchical structure schematic diagram that the step 8 of the manufacture method in the embodiment of the present invention according to Fig. 1 is obtained；
Fig. 7 is the hierarchical structure schematic diagram that the step 9 of the manufacture method in the embodiment of the present invention according to Fig. 1 is obtained.
Detailed description of the invention
Describe embodiments of the present invention in detail below with reference to drawings and Examples, whereby how the present invention is applied
Technological means solves technical problem, and the process that realizes reaching technique effect can fully understand and implement according to this.Need explanation
As long as not constituting conflict, each embodiment in the present invention and each feature in each embodiment can be combined with each other,
The technical scheme formed is all within protection scope of the present invention.
Embodiment one:
As it is shown in figure 1, the invention provides the manufacture method of a kind of TFT substrate, comprise the following steps.
S110, deposits the first metal layer on substrate, utilizes the mask patterning the first metal layer of first so that it is form grid
Pole.
In this step, first a substrate Glass is provided, on substrate Glass, then deposits the first metal layer Metal_
1, use a conventional light shield as first light shield, the first metal layer Metal_1 is carried out photoetching so that it is by patterning shape
Become grid.Here, substrate Glass is preferably transparent glass substrate.
S120, deposits gate insulator on substrate and grid.
In this step, need to deposit one layer of gate insulator GI on substrate Glass and grid so that gate insulator
GI covers all substrate Glass and grid.
S130, deposited semiconductor layer and the second metal level on gate insulator, utilize that second is mask patterning partly leads
Body layer and the second metal level so that it is form semiconductor region and source-drain electrode respectively.
In this step, first deposited semiconductor material layer AS and the second metal level Metal_2 on gate insulator GI,
And when patterned semiconductor material layer AS and the second metal level Metal_2 required photoresist layer (not shown), then
Use a halftone mask or a gray tone light shield as second light shield, to semiconductor material layer AS and the second metal level
Metal_2 carries out photoetching so that it is form semiconductor region and source-drain electrode by being patterned in the top of grid.
S140, deposits protective layer on gate insulator, semiconductor region and source-drain electrode.
In this step, need to deposit layer protective layer PV on gate insulator GI, semiconductor region and source-drain electrode so that
Protective layer PV covers all gate insulator GI, and semiconductor region and source-drain electrode.Wherein, the material of described protective layer PV can
To be SiO2Or SiON.
In above-mentioned steps one to step 4, conventional light shield and HTM light shield or GTM light is used to cover on making grid on substrate
The process of pole, gate insulator, semiconductor region and source-drain electrode and existing 4mask making technology make grid, gate insulator
Layer, semiconductor region are identical with the process of source-drain electrode, and here is omitted.So just can form level as shown in Figure 2
Structure.
But, different from existing 4mask making technology, the present invention is to the follow-up basis at the hierarchical structure shown in Fig. 2
The method of upper making pixel electrode has done further improvement.Detailed process is as follows.
S150, deposits photoresist layer on the protection layer, utilizes the 3rd mask patterning photoresist layer in road so that it is have two kinds of differences
Thickness, and expose the surface of protective layer in the position of via to be formed.
In this step, the protective layer PV first formed step 4 is cleaned processing, then heavy on protective layer PV
Long-pending one layer of photoresist layer PR, and use a halftone mask or a gray tone light shield as the 3rd light shield, pattern photoresist layer
PR, in order to remove the photoresistance in the position of via Via to be formed by full exposure imaging so that the surface exposure of protective layer PV
Out, and make the photoresistance in the position of pixel electrode to be formed be developed by half-exposure and have relatively thin thickness so that
Photoresistance in the position of channel-shaped figure to be formed has thicker thickness by not exposing.
S160, removes the protective layer in the position of via to be formed, and forms via so that the surface exposure of source-drain electrode goes out
Come, in order to can be electrically connected with pixel electrode afterwards.
In this step, dry etching is generally used to remove the protective layer PV in the position of via Via to be formed so that
The surface of the source-drain electrode of lower section can expose at least partially, in order to the later stage can contact with pixel electrode and be electrically connected
(as shown in Figure 4).
S170, carries out ashing process to photoresist layer so that partial disappearance and thickness that the thickness of photoresist layer is relatively thin are thicker
Parts thinner.
In this step, oxygen gas plasma (O is generally utilized2Plasma) photoresist layer PR is carried out ashing process, so that
Partial disappearance that photoresist layer is originally the most relatively thin and the thickest parts thinner (as shown in Figure 5).
S180, deposited semiconductor nesa coating on the surface of the photoresist layer remained and the exposure of other each layer.
In this step, generally utilize physical vaporous deposition (PVD) residual photoresist layer PR, and protective layer PV and
Layer of semiconductor nesa coating ITO (as shown in Figure 6) is sputtered on the exposed section of source-drain electrode.
S190, removes the transparent conductive semiconductor film of deposition on the photoresist layer and photoresist layer remained, so that thus
Make remaining transparent conductive semiconductor film form the pixel electrode with channel-shaped figure, and be electrically connected with source-drain electrode.
In this step, use stripping technology to remove the photoresist layer of residual, take away the quasiconductor of deposition on it transparent simultaneously
Conducting film.Specifically, it is possible to use stripper soaks photoresist layer PR, makes the photoresistance of residual peel off, take away half on photoresistance simultaneously
Conductor nesa coating ITO.In addition it is also possible to first to photoresist layer irradiating laser or ultraviolet, after expanding after making photoresistance extinction, then
Stripper is used to soak photoresist layer, in order to reach faster and better peeling effect.
Consequently, it is possible to just make the remaining transparent conductive semiconductor film got off define in appointment region have slit figure
Pixel electrode, and define electric connection (as shown in Figure 7) with source-drain electrode.
From figure 7 it can be seen that by the hierarchical structure of the 3mask method acquisition of the present invention and by existing 4mask work
The hierarchical structure that skill obtains is just the same, but the method for the present invention reduces the light shield quantity used in TFT substrate processing procedure,
Improve production efficiency, and do not interfere with display effect.
At this it should be noted that while it is disclosed that embodiment as above, but described content is intended merely to
The embodiment readily appreciating the present invention and use, is not limited to the present invention.In any the technical field of the invention
Technical staff, on the premise of without departing from spirit and scope disclosed in this invention, can be in the formal and details implemented
Make any amendment and change, but the scope of patent protection of the present invention, the scope that still must be defined with appending claims
It is as the criterion.
Claims (9)
1. the manufacture method of a TFT substrate, it is characterised in that comprise the following steps:
Step one, deposits the first metal layer on substrate, utilizes the mask patterning the first metal layer of first so that it is form grid
Pole；
Step 2, deposits gate insulator so that it is cover the grid on substrate and substrate on substrate；
Step 3, deposited semiconductor layer and the second metal level on gate insulator, utilize the mask patterning quasiconductor of second
Layer and the second metal level so that it is form semiconductor region and source-drain electrode respectively；
Step 4, deposits protective layer on gate insulator so that it is cover half above gate insulator and gate insulator
Conductor region and source-drain electrode；
Step 5, deposits photoresist layer on the protection layer, utilizes the 3rd mask patterning photoresist layer in road, to remove via to be formed
The photoresistance of position so that the surface exposure of protective layer out, and makes the photoresistance tool of the position of pixel electrode to be formed
The photoresistance having the position of relatively thin thickness and channel-shaped figure to be formed has thicker thickness；
Step 6, removes the protective layer of the position of via to be formed, and forms via so that the surface exposure of source-drain electrode out,
Can to be electrically connected with pixel electrode afterwards；
Step 7, carries out ashing process to photoresist layer so that partial disappearance that the thickness of photoresist layer is relatively thin and the thicker portion of thickness
Divide thinning；
Step 8, deposited semiconductor nesa coating on the surface of the photoresist layer remained and the exposure of other each layer；
Step 9, the photoresist layer removing residual and the transparent conductive semiconductor film deposited on it, partly lead so that remaining
Body nesa coating forms the pixel electrode with channel-shaped figure, and is electrically connected with source-drain electrode.
Manufacture method the most according to claim 1, it is characterised in that:
Described second light shield and the 3rd road light shield are halftone mask or gray tone light shield.
Manufacture method the most according to claim 1, it is characterised in that:
In described step 6, dry etching is used to remove the protective layer in the position of via to be formed.
Manufacture method the most according to claim 1, it is characterised in that:
In described step 7, utilize oxygen gas plasma that photoresist layer is carried out ashing process.
Manufacture method the most according to claim 1, it is characterised in that:
In described step 8, physical vaporous deposition is used to spatter on the surface of the photoresist layer remained and the exposure of other each layer
Penetrate transparent conductive semiconductor film.
Manufacture method the most according to claim 5, it is characterised in that:
In described step 9, stripping technology is used to remove the transparent conductive semiconductor of deposition on the photoresist layer and photoresist layer remained
Film.
Manufacture method the most according to claim 6, it is characterised in that
By using stripper to soak photoresist layer so that the photoresistance of residual is peeled off, and it is transparent to take away the quasiconductor on photoresistance simultaneously
Conducting film.
Manufacture method the most according to claim 7, it is characterised in that
First to photoresist layer irradiating laser or ultraviolet, after expanding after making photoresistance extinction, re-use stripper and soak photoresist layer.
Manufacture method the most according to claim 1, it is characterised in that
The material of described protective layer is SiO2Or SiON.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610794102.4A CN106229294A (en) | 2016-08-31 | 2016-08-31 | A kind of manufacture method of TFT substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610794102.4A CN106229294A (en) | 2016-08-31 | 2016-08-31 | A kind of manufacture method of TFT substrate |
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Family
ID=58075312
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| CN201610794102.4A Pending CN106229294A (en) | 2016-08-31 | 2016-08-31 | A kind of manufacture method of TFT substrate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783885A (en) * | 2017-01-03 | 2017-05-31 | 深圳市华星光电技术有限公司 | The preparation method of TFT substrate |
| CN107247376A (en) * | 2017-06-26 | 2017-10-13 | 深圳市华星光电技术有限公司 | The preparation method of TFT substrate and the preparation method of liquid crystal display device |
| CN107490911A (en) * | 2017-08-15 | 2017-12-19 | 昆山龙腾光电有限公司 | Array base palte and preparation method thereof and display panel |
| CN111834217A (en) * | 2020-07-13 | 2020-10-27 | Tcl华星光电技术有限公司 | Display panel preparation method and display device |
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| CN104157608A (en) * | 2014-08-20 | 2014-11-19 | 深圳市华星光电技术有限公司 | Manufacture method for and structure of the TFT substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106783885A (en) * | 2017-01-03 | 2017-05-31 | 深圳市华星光电技术有限公司 | The preparation method of TFT substrate |
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| CN107247376A (en) * | 2017-06-26 | 2017-10-13 | 深圳市华星光电技术有限公司 | The preparation method of TFT substrate and the preparation method of liquid crystal display device |
| CN107247376B (en) * | 2017-06-26 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of TFT substrate and manufacturing method of liquid crystal display device |
| CN107490911A (en) * | 2017-08-15 | 2017-12-19 | 昆山龙腾光电有限公司 | Array base palte and preparation method thereof and display panel |
| CN111834217A (en) * | 2020-07-13 | 2020-10-27 | Tcl华星光电技术有限公司 | Display panel preparation method and display device |
| CN111834217B (en) * | 2020-07-13 | 2023-05-09 | Tcl华星光电技术有限公司 | Display panel preparation method and display device |
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Application publication date: 20161214 |