CN106159673A - There is semiconductor laser chip and the manufacture method thereof of structure ridge waveguide of falling from power - Google Patents
There is semiconductor laser chip and the manufacture method thereof of structure ridge waveguide of falling from power Download PDFInfo
- Publication number
- CN106159673A CN106159673A CN201610717724.7A CN201610717724A CN106159673A CN 106159673 A CN106159673 A CN 106159673A CN 201610717724 A CN201610717724 A CN 201610717724A CN 106159673 A CN106159673 A CN 106159673A
- Authority
- CN
- China
- Prior art keywords
- ridge waveguide
- layer
- semiconductor laser
- power
- falling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
nullThe invention discloses a kind of semiconductor laser chip with structure ridge waveguide of falling from power and manufacture method thereof，Including InP substrate and the InGaAsP etching stop layer that is successively set on from top to bottom in InP substrate、2nd InP clad、InGaAsP diffraction grating layer、3rd InP clad and active area，It is provided with ridge waveguide on described InGaAsP etching stop layer，The section shape of ridge waveguide is inverted trapezoidal，The ridge waveguide of structure of being fallen from power by setting，Under same luminous width，Metal contact layer area amasss much larger than conventional contacts aspect，Decrease energy to damage，Use wet etching，Because different component semiconductor layer has the selective etch solution of correspondence，The accurate repeatability of etching depth is high，Improve the reliability of device，Use this structure，Semiconductor chip impedance in high frequency can be reduced，Thus can be widely applied to design and the manufacture of 25G and 100G chip of laser.
Description
Technical field
The invention belongs to semiconductor laser field, the semiconductor laser that relates to there is structure ridge waveguide of falling from power and
Its manufacture method.
Background technology
Ridge waveguide (Ridge-Waveguide, RWG) in ridge type semiconductor laser instrument, can according to the difference of etching technics
Produce straight platform (Vertical-Mesa, VM ＞ and fall from power (structure of the shapes such as Reversed-Mesa, RM ＞, from research
Knowing, compared to traditional straight platform structure ridge waveguide laser, structure of falling from power ridge waveguide laser has lower threshold current, more
Little series resistance and thermal resistance, less high-frequency resistance value, may be used for following 25G and 100G high-speed chip manufacture.
Ining contrast to dry etching, ridge waveguide is easily generated by plasma bombardment, ridge waveguide sidewall semiconductor in manufacturing process
Any residual product stayed after the defect of physical bombardment, and physics and chemical reaction, and etching depth is difficult to accurately.
Summary of the invention
For existing technological deficiency, the invention provides a kind of semiconductor laser core with structure ridge waveguide of falling from power
Sheet and manufacture method thereof, the present invention is fallen from power by setting the ridge waveguide of structure, under same luminous width, metal contact layer face
Long-pending long-pending much larger than conventional contacts aspect, decrease energy and damage, use wet etching, because different component semiconductor layer has the choosing of correspondence
Selecting property etching solution, the accurate repeatability of etching depth is high, improves the reliability of device, in addition, little resistance value, Ke Yirang
This structure is for the manufacture of higher rate chip.
To achieve these goals, the technical solution used in the present invention is: the quasiconductor with structure ridge waveguide of falling from power swashs
Light device chip, the InGaAsP etching stop layer including InP substrate and being successively set on from top to bottom in InP substrate, second
InP clad, InGaAsP diffraction grating layer, the 3rd InP clad and active area, described InGaAsP etching stop layer is arranged
Having ridge waveguide, the section shape of ridge waveguide is inverted trapezoidal.
The section shape of described ridge waveguide is symmetrical.
Described ridge waveguide includes mask layer, InGaAs contact layer and the InP clad stacked gradually from top to bottom.
The lateral surface of described mask layer and InGaAs contact layer is atomic level shiny surface.
Described mask layer is SiO2Layer or Si3N4Layer, the thickness of mask layer is 200nm.
End face width is bottom width 2 times of described ridge waveguide.
It is evenly distributed with some ridge waveguides on described InGaAsP etching stop layer.
There is the manufacture method of the semiconductor laser chip of structure ridge waveguide of falling from power, comprise the following steps:
Step one, deposits the thick SiO of 200nm on the InGaAs contact layer of ridge type semiconductor laser epitaxial sheet2Layer or
Si3N4Layer is as mask layer, and spin coating photoresist on mask layer, produces pattern by the photomask exposure with ridge figure, then
Use reactive ion etching (RIE) that the pattern of photoresist is transferred on following mask layer；
Step 2: using wet etching InGaAs contact layer, the mixing of etching use Br (bromine) and HBr (hydrobromic acid) is molten
Liquid, the volume ratio of Br Yu HBr is 1:(5～30), etch period is 5～20 seconds, the InGaAs contact that mask layer will not had to cover
Layer corrodes into raceway groove；
Step 3: use wet etching the oneth InP clad, etching to use HBr (hydrobromic acid) and H3PO4Mixing of (phosphoric acid)
Close solution, HBr and H3PO4Volume ratio be 1:(1～3), etch period is 3～5 minutes, will not have mask layer covers first
InP clad corrodes, and stops etching, obtain the present invention on InGaAsP etching stop layer.
In described step one, the film plating process of mask layer is plasma enhanced chemical vapor deposition (PECVD).
Compared with prior art, product of the present invention at least has the advantages that, the present invention is fallen from power structure by setting
Ridge waveguide, under same luminous width, metal contact layer area much larger than conventional contacts aspect amass, decrease energy damage
Consumption, structure of falling from power ridge waveguide and metal electrode contact area are big compared with straight platform structure, and radiating effect is preferable, series resistance and thermal resistance
Also little compared with straight platform structure, the structure of falling from power of inverted trapezoidal makes the current spread effect being injected with source region reduce, thus obtains lower
Threshold current.
Further, ridge waveguide sidewall atomic level is smooth, effectively reduces light scattering in ridge waveguide, and energy damages
Consume little.
Compared with prior art, manufacture method of the present invention at least has the advantages that, the present invention uses two stage
Wet etching, first paragraph uses bromine and hydrobromic mixed liquor to carry out nonselective selective wet chemical etching, is tied by epitaxial wafer
The InGaAs contact layer of the structure the superiors, second segment uses the mixed liquor of hydrobromic acid and phosphoric acid to carry out selective chemical wet etching,
By InP clad erosion removal, and form<111>lattice plane at ridge waveguide InP clad sidewall, the ridge ripple of the structure that obtains falling from power
Leading, wet etching has the selective etch solution of correspondence because of different component semiconductor layer, and the accurate repeatability of etching depth is high, ridge ripple
Lead sidewall and present semiconductor lattice face because of selective etch, for the insulating barrier growth of subsequent handling, the attached of cladding can be increased
The property, improves the reliability of device simultaneously.
Accompanying drawing explanation
Fig. 1 is the semiconductor laser chip epitaxial slice structure schematic diagram of the present invention；
Fig. 2 be the present invention semiconductor laser chip in fall from power structure ridge waveguide formation process figure.
In accompanying drawing: 10-mask layer, 11-InGaAs contact layer, 12-the oneth InP clad, 13-InGaAsP etching stopping
Layer, 14-the 2nd InP clad, 15-InGaAsP diffraction grating layer, 16-the 3rd InP clad, 17-active area, 18-InP serves as a contrast
The end, 20-ridge waveguide.
Detailed description of the invention
With specific embodiment, the present invention is further elaborated below in conjunction with the accompanying drawings.
As depicted in figs. 1 and 2, there is the semiconductor laser chip of structure ridge waveguide of falling from power, including InP substrate 18 and
InGaAsP etching stop layer the 13, the 2nd InP clad 14, the InGaAsP that are successively set on from top to bottom in InP substrate 18 spread out
Penetrate grating layer the 15, the 3rd InP clad 16 and active area 17, described InGaAsP etching stop layer 13 is evenly distributed with some
Ridge waveguide 20, the section shape of ridge waveguide 20 is inverted trapezoidal, and the section shape of ridge waveguide 20 is symmetrical, the end face of ridge waveguide 20
Width is 2 times of bottom width, and ridge waveguide 20 includes mask layer 10, InGaAs contact layer 11 and stacked gradually from top to bottom
One InP clad 12, the lateral surface of the mask layer 10 and InGaAs contact layer 11 of ridge waveguide 20 is atomic level shiny surface, described
Mask layer 10 is the SiO that 200nm is thick2Layer or Si3N4Layer.
Embodiment 1, as depicted in figs. 1 and 2, has the manufacturer of the semiconductor laser chip of structure ridge waveguide of falling from power
Method, comprises the following steps:
Step one, using plasma strengthens chemical gaseous phase deposition (PECVD) at ridge type semiconductor laser epitaxial sheet
The thick SiO of 200nm is deposited on InGaAs contact layer 112Layer or Si3N4Layer is as mask layer 10, and spin coating light on mask layer 10
Photoresist, produces pattern by the photomask exposure with ridge figure, re-uses reactive ion etching (RIE) the pattern of photoresist
Transfer on following mask layer 10；
Step 2: use wet etching InGaAs contact layer 11, etching to use Br (bromine) and the mixing of HBr (hydrobromic acid)
Solution, the volume ratio of Br Yu HBr is 1:5, and etch period is 10 seconds, by rotten for the InGaAs contact layer 11 not having mask layer 10 to cover
Lose into raceway groove；
Step 3: use wet etching the oneth InP clad 12, etching to use HBr (hydrobromic acid) and H3PO4(phosphoric acid)
Mixed solution, HBr and H3PO4Volume ratio be 1:2, etch period is 3 minutes, the InP bag that mask layer 10 will not had to cover
Coating 12 corrodes, and stops etching, obtain the present invention on InGaAsP etching stop layer 13.
Embodiment 2, as depicted in figs. 1 and 2, has the manufacturer of the semiconductor laser chip of structure ridge waveguide of falling from power
Method, comprises the following steps:
Step one, using plasma strengthens chemical gaseous phase deposition (PECVD) at ridge type semiconductor laser epitaxial sheet
The thick SiO of 200nm is deposited on InGaAs contact layer 112Layer or Si3N4Layer is as mask layer 10, and spin coating light on mask layer 10
Photoresist, produces pattern by the photomask exposure with ridge figure, re-uses reactive ion etching (RIE) the pattern of photoresist
Transfer on following mask layer 10；
Step 2: use wet etching InGaAs contact layer 11, etching to use Br (bromine) and the mixing of HBr (hydrobromic acid)
Solution, the volume ratio of Br Yu HBr is 1:15, and etch period is 5 seconds, by rotten for the InGaAs contact layer 11 not having mask layer 10 to cover
Lose into raceway groove；
Step 3: use wet etching the oneth InP clad 12, etching to use HBr (hydrobromic acid) and H3PO4(phosphoric acid)
Mixed solution, HBr and H3PO4Volume ratio be 1:3, etch period is 4 minutes, the InP bag that mask layer 10 will not had to cover
Coating 12 corrodes, and stops, obtaining the present invention on InGaAsP etching stop layer 13.
Embodiment 3, as depicted in figs. 1 and 2, has the manufacturer of the semiconductor laser chip of structure ridge waveguide of falling from power
Method, comprises the following steps:
Step one, using plasma strengthens chemical gaseous phase deposition (PECVD) at ridge type semiconductor laser epitaxial sheet
The thick SiO of 200nm is deposited on InGaAs contact layer 112Layer or Si3N4Layer is as mask layer 10, and spin coating light on mask layer 10
Photoresist, produces pattern by the photomask exposure with ridge figure, re-uses reactive ion etching (RIE) the pattern of photoresist
Transfer on following mask layer 10；
Step 2: use wet etching InGaAs contact layer 11, etching to use Br (bromine) and the mixing of HBr (hydrobromic acid)
Solution, the volume ratio of Br Yu HBr is 1:30, and etch period is 20 seconds, the InGaAs contact layer 11 that mask layer 10 will not had to cover
Corrode into raceway groove；
Step 3: use wet etching the oneth InP clad 12, etching to use HBr (hydrobromic acid) and H3PO4(phosphoric acid)
Mixed solution, HBr and H3PO4Volume ratio be 1:1, etch period is 5 minutes, the InP bag that mask layer 10 will not had to cover
Coating 12 corrodes, and stops, obtaining the present invention on InGaAsP etching stop layer 13.
Embodiment 4, as depicted in figs. 1 and 2, has the manufacturer of the semiconductor laser chip of structure ridge waveguide of falling from power
Method, comprises the following steps:
Step one, using plasma strengthens chemical gaseous phase deposition (PECVD) at ridge type semiconductor laser epitaxial sheet
The thick SiO of 200nm is deposited on InGaAs contact layer 112Layer or Si3N4Layer is as mask layer 10, and spin coating light on mask layer 10
Photoresist, produces pattern by the photomask exposure with ridge figure, re-uses reactive ion etching (RIE) the pattern of photoresist
Transfer on following mask layer 10；
Step 2: use wet etching InGaAs contact layer 11, etching to use Br (bromine) and the mixing of HBr (hydrobromic acid)
Solution, the volume ratio of Br Yu HBr is 1:20, and etch period is 5～20 seconds, the InGaAs contact layer that mask layer 10 will not had to cover
11 corrode into raceway groove；
Step 3: use wet etching the oneth InP clad 12, etching to use HBr (hydrobromic acid) and H3PO4(phosphoric acid)
Mixed solution, HBr and H3PO4Volume ratio be 1:1, etch period is 3～5 minutes, will not have mask layer 10 covers first
InP clad 12 corrodes, and stops, obtaining the present invention on InGaAsP etching stop layer 13.
Claims (9)
1. there is the semiconductor laser chip of structure ridge waveguide of falling from power, it is characterised in that include InP substrate (18) and from upper
The InGaAsP etching stop layer (13) that is successively set under in InP substrate (18), the 2nd InP clad (14), InGaAsP
Diffraction grating layer (15), the 3rd InP clad (16) and active area (17), described InGaAsP etching stop layer (13) is upper to be arranged
Having ridge waveguide (20), the section shape of ridge waveguide (20) is inverted trapezoidal.
The semiconductor laser chip with structure ridge waveguide of falling from power the most according to claim 1, it is characterised in that described
The section shape of ridge waveguide (20) is symmetrical.
The semiconductor laser chip with structure ridge waveguide of falling from power the most according to claim 1, it is characterised in that described
Ridge waveguide (20) includes mask layer (10), InGaAs contact layer (11) and the InP clad stacked gradually from top to bottom
(12)。
The semiconductor laser chip with structure ridge waveguide of falling from power the most according to claim 3, it is characterised in that described
The lateral surface of mask layer (10) and InGaAs contact layer (11) is atomic level shiny surface.
The semiconductor laser chip with structure ridge waveguide of falling from power the most according to claim 3, it is characterised in that described
Mask layer (10) is SiO2Layer or Si3N4Layer, the thickness of mask layer (10) is 200nm.
The semiconductor laser chip with structure ridge waveguide of falling from power the most according to claim 1, it is characterised in that described
End face width is bottom width 2 times of ridge waveguide (20).
The semiconductor laser chip with structure ridge waveguide of falling from power the most according to claim 1, it is characterised in that described
Some ridge waveguides (20) it are evenly distributed with on InGaAsP etching stop layer (13).
8. there is the manufacture method of the semiconductor laser chip of structure ridge waveguide of falling from power, it is characterised in that comprise the following steps:
Step one, at the SiO that InGaAs contact layer (11) the upper deposition 200nm of ridge type semiconductor laser epitaxial sheet is thick2Layer or
Si3N4Layer is as mask layer (10), and at the upper spin coating photoresist of mask layer (10), is produced by the photomask exposure with ridge figure
Raw pattern, re-uses reactive ion etching (RIE) and the pattern of photoresist is transferred on following mask layer (10)；
Step 2: using wet etching InGaAs contact layer (11), the mixing of etching use Br (bromine) and HBr (hydrobromic acid) is molten
Liquid, the volume ratio of Br Yu HBr is 1:(5～30), etch period is 5～20 seconds, will not have the InGaAs that mask layer (10) covers
Contact layer (11) corrodes into raceway groove；
Step 3: use wet etching the oneth InP clad (12), etching to use HBr (hydrobromic acid) and H3PO4Mixing of (phosphoric acid)
Close solution, HBr and H3PO4Volume ratio be 1:(1～3), etch period is 3～5 minutes, will not have mask layer 10 covers
One InP clad (12) corrosion, stops etching on InGaAsP etching stop layer (13), obtains the present invention.
The semiconductor laser chip with structure ridge waveguide of falling from power the most according to claim 8, it is characterised in that described
In step one, the film plating process of mask layer (10) is plasma enhanced chemical vapor deposition (PECVD).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610717724.7A CN106159673A (en) | 2016-08-24 | 2016-08-24 | There is semiconductor laser chip and the manufacture method thereof of structure ridge waveguide of falling from power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610717724.7A CN106159673A (en) | 2016-08-24 | 2016-08-24 | There is semiconductor laser chip and the manufacture method thereof of structure ridge waveguide of falling from power |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106159673A true CN106159673A (en) | 2016-11-23 |
Family
ID=57341887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610717724.7A Pending CN106159673A (en) | 2016-08-24 | 2016-08-24 | There is semiconductor laser chip and the manufacture method thereof of structure ridge waveguide of falling from power |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106159673A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882788A (en) * | 2015-06-15 | 2015-09-02 | 中国科学院半导体研究所 | Wet etching method for preparing ridge waveguide structure of high-selection-ratio quantum cascading laser |
| CN110649465A (en) * | 2019-08-31 | 2020-01-03 | 河南仕佳光子科技股份有限公司 | Novel ridge waveguide structure and manufacturing method |
| CN111366115A (en) * | 2020-03-18 | 2020-07-03 | 青岛海信宽带多媒体技术有限公司 | Method for measuring waveguide width of laser |
| CN111541149A (en) * | 2020-05-15 | 2020-08-14 | 陕西源杰半导体技术有限公司 | 10G anti-reflection laser and preparation process thereof |
| CN113078553A (en) * | 2021-06-07 | 2021-07-06 | 陕西源杰半导体科技股份有限公司 | Aluminum quantum well laser and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1531156A (en) * | 2003-03-17 | 2004-09-22 | 松下电器产业株式会社 | Semiconductor laser device and optical picker therewith |
| CN1549352A (en) * | 2003-05-23 | 2004-11-24 | 武汉光迅科技有限责任公司 | Al-Ga-In-As multi-quantum sink super radiation luminous diode |
| CN101006624A (en) * | 2005-01-18 | 2007-07-25 | 松下电器产业株式会社 | Semiconductor laser device, and fabrication method of the device |
| CN101969179A (en) * | 2010-11-24 | 2011-02-09 | 武汉华工正源光子技术有限公司 | Method for manufacturing reversed-mesa-type ridged waveguide semiconductor laser |
| CN102364771A (en) * | 2011-11-10 | 2012-02-29 | 中国科学院半导体研究所 | Method for manufacturing laser chip for water vapor detection |
| CN103515841A (en) * | 2012-06-25 | 2014-01-15 | 三菱电机株式会社 | Optical semiconductor device and method for manufacturing the same |
| CN103532014A (en) * | 2013-10-31 | 2014-01-22 | 中国科学院半导体研究所 | Distributed Bragg feedback tunable laser and manufacturing method thereof |
| CN206059907U (en) * | 2016-08-24 | 2017-03-29 | 陜西源杰半导体技术有限公司 | Semiconductor laser chip with structure ridge waveguide of falling from power |
-
2016
- 2016-08-24 CN CN201610717724.7A patent/CN106159673A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1531156A (en) * | 2003-03-17 | 2004-09-22 | 松下电器产业株式会社 | Semiconductor laser device and optical picker therewith |
| CN1549352A (en) * | 2003-05-23 | 2004-11-24 | 武汉光迅科技有限责任公司 | Al-Ga-In-As multi-quantum sink super radiation luminous diode |
| CN101006624A (en) * | 2005-01-18 | 2007-07-25 | 松下电器产业株式会社 | Semiconductor laser device, and fabrication method of the device |
| CN101969179A (en) * | 2010-11-24 | 2011-02-09 | 武汉华工正源光子技术有限公司 | Method for manufacturing reversed-mesa-type ridged waveguide semiconductor laser |
| CN102364771A (en) * | 2011-11-10 | 2012-02-29 | 中国科学院半导体研究所 | Method for manufacturing laser chip for water vapor detection |
| CN103515841A (en) * | 2012-06-25 | 2014-01-15 | 三菱电机株式会社 | Optical semiconductor device and method for manufacturing the same |
| CN103532014A (en) * | 2013-10-31 | 2014-01-22 | 中国科学院半导体研究所 | Distributed Bragg feedback tunable laser and manufacturing method thereof |
| CN206059907U (en) * | 2016-08-24 | 2017-03-29 | 陜西源杰半导体技术有限公司 | Semiconductor laser chip with structure ridge waveguide of falling from power |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882788A (en) * | 2015-06-15 | 2015-09-02 | 中国科学院半导体研究所 | Wet etching method for preparing ridge waveguide structure of high-selection-ratio quantum cascading laser |
| CN104882788B (en) * | 2015-06-15 | 2018-03-30 | 中国科学院半导体研究所 | Prepare the wet etching method of high selectivity QCL ridge waveguide structure |
| CN110649465A (en) * | 2019-08-31 | 2020-01-03 | 河南仕佳光子科技股份有限公司 | Novel ridge waveguide structure and manufacturing method |
| CN110649465B (en) * | 2019-08-31 | 2021-01-08 | 河南仕佳光子科技股份有限公司 | Novel ridge waveguide structure and manufacturing method |
| CN111366115A (en) * | 2020-03-18 | 2020-07-03 | 青岛海信宽带多媒体技术有限公司 | Method for measuring waveguide width of laser |
| CN111541149A (en) * | 2020-05-15 | 2020-08-14 | 陕西源杰半导体技术有限公司 | 10G anti-reflection laser and preparation process thereof |
| CN113078553A (en) * | 2021-06-07 | 2021-07-06 | 陕西源杰半导体科技股份有限公司 | Aluminum quantum well laser and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106159673A (en) | There is semiconductor laser chip and the manufacture method thereof of structure ridge waveguide of falling from power | |
| JP6499654B2 (en) | Method for selectively etching a mask deposited on a silicon substrate | |
| KR101770472B1 (en) | Semiconductor structure and manufacturing method thereof | |
| US8617969B2 (en) | Method for producing semiconductor optical device | |
| CN110911476B (en) | Buried gate structure and manufacturing method thereof | |
| CN102637720A (en) | Isolation structure profile for gap filling | |
| CN108933382B (en) | Grating, DBR laser and grating preparation method | |
| CN101752208A (en) | Semiconductor high-voltage terminal structure and production method thereof | |
| CN101877330A (en) | Sapphire substrate with period structure | |
| US9153942B2 (en) | Method of manufacturing semiconductor device | |
| CN100466220C (en) | Method for forming trench | |
| CN110875575B (en) | Method for manufacturing narrow ridge structure of semiconductor laser | |
| JPS63107119A (en) | Manufacture of integrated circuit with stepped insulating layer | |
| CN105226502A (en) | A kind of preparation method of narrow vallum type GaAs base GaInP quantum well structure semiconductor laser | |
| US10957550B2 (en) | Semiconductor structure and formation method thereof | |
| TWI281214B (en) | Method of manufacturing a semiconductor device | |
| CN117117633A (en) | Etching method of ridge structure of quantum cascade laser based on full InP waveguide | |
| JPH03104181A (en) | Etching of mirror facet in iii-v compound semiconductor structure and formation of etching mask | |
| CN104299938B (en) | The forming method of fleet plough groove isolation structure | |
| JP2013044803A (en) | Manufacturing method of optical semiconductor element | |
| CN106960816B (en) | The method of Dual graphing | |
| US8038893B2 (en) | Method for producing semiconductor optical device | |
| CN104124138B (en) | Graphic method | |
| CN115148874B (en) | Preparation method of patterned substrate structure | |
| CN113300217B (en) | Method for manufacturing ridge surface grating based on buried metal mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161123 |