CN106093532A - A kind of voltage check device of high stability - Google Patents
A kind of voltage check device of high stability Download PDFInfo
- Publication number
- CN106093532A CN106093532A CN201610596093.8A CN201610596093A CN106093532A CN 106093532 A CN106093532 A CN 106093532A CN 201610596093 A CN201610596093 A CN 201610596093A CN 106093532 A CN106093532 A CN 106093532A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/30—Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0038—Circuits for comparing several input signals and for indicating the result of this comparison, e.g. equal, different, greater, smaller (comparing pulses or pulse trains according to amplitude)
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Abstract
A kind of voltage check device of high stability, the present invention relates to circuit design field, it aims to solve the problem that prior art is unreasonable owing to overshoot suppression circuit is arranged and that cause output voltage crosses punching or negative gain is too strong and its outfan field effect transistor exists the technical problems such as structure complexity, radioprotective, noise ability is weak, temperature characterisitic is poor.The invention mainly comprises linear compensation drive circuit, including the first field effect transistor, receive input voltage signal；First operational amplifier, blocks for output voltage signal, receives the feedback signal of linear compensation drive circuit output and exports modulated drive signal to linear compensation drive circuit；Voltage detecting circuit, receives the modulated drive signal of the first operational amplifier output；Cross and rush testing circuit, receive feedback signal and the detection signal of voltage detecting circuit output of linear compensation drive circuit output.The present invention is used for providing voltage modulated.
Description
Technical field
The present invention relates to circuit design field, be specifically related to the voltage check device of a kind of high stability.
Background technology
In prior art, Automated condtrol part and motor part use same alternating current power supply, introduce more astable
Property load and substantial amounts of system electromagnetic noise and cross rush the unconventional situations such as signal generation often；Therefore, high efficiency is introduced reasonable
Voltage modulator be necessary.For there being the voltage modulator of punching suppression, such as, it is provided with Zener diode
Manipulator, owing to utilizing indifference chopping way to limit output, which inhibits input signal gain and is not suitable for control chip
Feedback detection；It is provided with the operational amplifier without logic control and the manipulator of field-effect tube structure, when input signal is negative letter
Number source is, exists and unnecessary crosses punching suppression, causes output voltage too low, it is impossible to provide loaded work piece voltage, and this manipulator is examined
When measuring punching generation, there is also the field effect transistor pinch off of outfan not in time.At present, field effect transistor manufacturing process has tended to
Kind, but still suffer from the problems such as structure complexity, radioprotective, noise ability is weak, temperature characterisitic is poor.
Summary of the invention
For above-mentioned prior art, present invention aim at providing the voltage check device of a kind of high stability, solve existing
Output voltage that is unreasonable and that cause does not meets design requirement and its outfan field effect owing to overshoot suppression circuit is arranged technology
The technical problems such as structure complexity, radioprotective, noise ability is weak, temperature characterisitic is poor should be there is by pipe.
For reaching above-mentioned purpose, the technical solution used in the present invention is as follows:
The voltage check device of a kind of high stability, including linear compensation drive circuit, including the first field effect transistor
Q2, receives input voltage signal；First operational amplifier, blocks for output voltage signal, receives linear compensation drive circuit
Output feedback signal and export modulated drive signal to linear compensation drive circuit；Voltage detecting circuit, receives the first computing
The modulated drive signal of amplifier output；Cross and rush testing circuit, receive feedback signal and the electricity of linear compensation drive circuit output
The detection signal of pressure testing circuit output；The first described field effect transistor Q2, including P-type silicon substrate, P-type silicon substrate bottom surface is arranged
Having the first aluminum electrode, the first aluminum electrode is provided with Type B substrate lead, P-type silicon substrate upper surface two ends are provided with symmetrical N-type
District, is respectively arranged with the second aluminum electrode, the 3rd aluminum electrode above symmetrical N-type region, the second aluminum electrode is provided with source electrode, the 3rd aluminum
It is provided with drain electrode on electrode, between the second aluminum electrode and the 3rd aluminum electrode, is provided with SiO2Insulating barrier, SiO2It is provided with on insulating barrier
4th aluminum electrode, the 4th aluminum electrode is provided with grid, and Type B substrate lead is copper-plated metal line.
In such scheme, described linear compensation drive circuit, including the first field effect transistor, its drain electrode receives input electricity
Pressure signal；First resistance, its one end connects the source electrode of the first field effect transistor；Audion, its emitter stage connects the another of the first resistance
One end and be additionally coupled to its base stage；Second resistance, the colelctor electrode of its one end connecting triode；Lower voltage node, connects the second electricity
The other end of resistance；Linear compensation circuit, connects the first field effect transistor.
In such scheme, described linear compensation circuit, including the first diode, its high electrode connects the first field effect transistor
Drain electrode and low electrode connect the grid of the first field effect transistor；Second diode, its high electrode connects the source of the first field effect transistor
Pole and low electrode connect the grid of the first field effect transistor；3rd diode, its low electrode connects the drain electrode of the first field effect transistor；The
Four audions, its low electrode connects the source electrode of the first field effect transistor；Electric capacity, its one end connects the source electrode of the first field effect transistor；Its
In, the 3rd diode, the 4th audion and electric capacity are additionally coupled to the emitter stage of audion.Diode is used for command potential point, draws
Big electric potential difference and reduce rising time and trailing edge time；Electric capacity is used for storing up electric charge, keeps the stability of output.
In such scheme, described voltage detecting circuit, including the first comparator, its high electricity end connects has first with reference to electricity
Pressure node and low electricity terminate into modulated drive signal；Second comparator, its high electricity end connects the second reference voltage node and low
Electrode accesses modulated drive signal；Or door, its input port connects outfan and the output of the first comparator of the second comparator
End.
In such scheme, described mistake rushes testing circuit, and including NAND gate, its input port connects or the outfan of door；
Second operational amplifier, its inverting input connects the 3rd reference voltage node, and in-phase input end accesses feedback signal and defeated
Go out end and be connected to the input port of NAND gate；Second field effect transistor, its grid connects outfan and the leakage of the second operational amplifier
Modulated drive signal is accessed in pole.
In such scheme, the first described operational amplifier, its in-phase input end accesses feedback signal and inverting input
Connect the 3rd reference voltage node.
In such scheme, the second described field effect transistor, its source electrode connects the voltage output end of a processor.
In such scheme, the first described field effect transistor, select depletion type.
In such scheme, the first described operational amplifier or the second operational amplifier, select differential operational amplifier.
Compared with prior art, beneficial effects of the present invention: when excessively rushing signal input, it is possible to the pinch off that powers in time exports
Field effect transistor thus stop and have influence on the next load further；Modulation is controlled by dual operational amplifier, dual comparator self feed back
Drive signal voltage amplitude and persistent period；Output transistor simple in construction, good temp characteristic, noise are low, radiation resistance ability
By force.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the present invention；
Fig. 2 is the circuit more preferable embodiment schematic diagram of the present invention；
Fig. 3 is the first field-effect tube structure schematic diagram of the present invention.
Detailed description of the invention
All features disclosed in this specification, or disclosed all methods or during step, except mutually exclusive
Feature and/or step beyond, all can combine by any way.
The present invention will be further described below in conjunction with the accompanying drawings:
Embodiment 1
Such as Fig. 1, described reference voltage node V1-V4, direct voltage source or microcontroller voltage output end all can be used
Power supply, is excessively rushed signal and is introduced by input voltage signal Vin, and depletion field effect transistor Q2 operating conditions is non-modulation state, the most defeated
Enter voltage signal and be directly equal to output voltage signal Vout；For reference voltage node V2, need keep input voltage signal with
The difference of reference voltage node V2 positive voltage is higher than the magnitude of voltage of modulated drive signal；When reference voltage node V3 magnitude of voltage is higher than
The magnitude of voltage of modulated drive signal or when comparator U6 exports high level, and examine at the in-phase input end of operational amplifier U2
Measuring when rushing signal, NAND gate U3A makes field effect transistor Q1 end, and operational amplifier U1 had also detected that simultaneously and crossed punching simultaneously
Signal, during the cut-off of field effect transistor Q1 before have begun to boosting, until triggering depletion field effect transistor Q2 pinch off, served as rushing signal from
When disappearing in input voltage signal Vin, low for output electricity, NAND gate U3A are made field effect transistor Q1 lead by operational amplifier U1, U2
Logical, modulated drive signal is released by effect pipe Q1 and is gradually weakened, and input voltage signal is recovered by depletion field effect transistor Q2
Obtain output voltage signal Vout.
Such scheme can also improve further, as Fig. 2, voltage node Vm and Vp can be controlled by a processor, is used for
Set initial range and regulation is released the time, and additionally include that the power vd D being sequentially connected with, resistance R3, depletion type field are imitated
Should pipe Q4 and synchro switch audion Q5；Depletion field effect transistor Q4 can rush signal detection then crossing, it is provided that voltage is quick
Rise；Synchro switch audion Q5, its base stage accesses voltage node Vs, and voltage node Vs magnitude of voltage to be much smaller than the input of punching
Voltage signal Vin magnitude of voltage but be intended to cross rush time more than junction field threshold voltage, signal can be rushed carry out high level of synchronization with crossing.
Embodiment 2
As it is shown on figure 3, a kind of semiconductor field, including P-type silicon substrate 1, described P-type silicon substrate bottom surface is provided with the
One aluminum electrode 10, described first aluminum electrode 10 is provided with Type B substrate lead 11, and described P-type silicon substrate 1 upper surface two ends are arranged
There is symmetrical N-type region 2, above described symmetrical N-type region 2, be respectively arranged with the second aluminum electrode the 3, the 3rd aluminum electrode 7, described second aluminum
It is provided with source electrode 4 on electrode 3, described 3rd aluminum electrode 7 is provided with drain electrode 8, described second aluminum electrode 3 and the 3rd aluminum electrode 7
Between be provided with SiO2Insulating barrier 6, described SiO2It is provided with the 4th aluminum electrode 9 on insulating barrier 6, described 4th aluminum electrode 9 is arranged
There is grid 5.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, and any
Belong to those skilled in the art in the technical scope that the invention discloses, the change that can readily occur in or replacement, all answer
Contain within protection scope of the present invention.
Claims (6)
1. the voltage check device of a high stability, it is characterised in that include
Linear compensation drive circuit, including the first field effect transistor Q2, receives input voltage signal；
First operational amplifier, blocks for output voltage signal, receives the feedback signal of linear compensation drive circuit output also
Output modulated drive signal is to linear compensation drive circuit；
Voltage detecting circuit, receives the modulated drive signal of the first operational amplifier output；
Cross and rush testing circuit, receive the feedback signal of linear compensation drive circuit output and the detection letter of voltage detecting circuit output
Number；
The first described field effect transistor Q2, including P-type silicon substrate, P-type silicon substrate bottom surface is provided with the first aluminum electrode, the first aluminum electricity
Being provided with Type B substrate lead on extremely, P-type silicon substrate upper surface two ends are provided with symmetrical N-type region, set respectively above symmetrical N-type region
It is equipped with the second aluminum electrode, the 3rd aluminum electrode, the second aluminum electrode is provided with source electrode, the 3rd aluminum electrode is provided with drain electrode, second
It is provided with SiO between aluminum electrode and the 3rd aluminum electrode2Insulating barrier, SiO2The 4th aluminum electrode, the 4th aluminum electrode it is provided with on insulating barrier
On be provided with grid, Type B substrate lead is copper-plated metal line.
The voltage check device of a kind of high stability the most according to claim 1, it is characterised in that described linear compensation
Drive circuit, including
First field effect transistor Q2, its drain electrode receives input voltage signal；
First resistance R1, its one end connects the source electrode of the first field effect transistor Q2；
Audion Q3, its emitter stage connects the other end of the first resistance R1 and is additionally coupled to its base stage；
Second resistance R2, the colelctor electrode of its one end connecting triode Q3；
Lower voltage node VSS, connects the other end of the second resistance R2；
Linear compensation circuit, connects the first field effect transistor Q2.
The voltage check device of a kind of high stability the most according to claim 2, it is characterised in that described linear compensation
Circuit, including
First diode D1, its high electrode connects the drain electrode of the first field effect transistor Q2 and low electrode connects the first field effect transistor Q2
Grid；
Second diode D2, its high electrode connects the source electrode of the first field effect transistor Q2 and low electrode connects the first field effect transistor Q2
Grid；
3rd diode D3, its low electrode connects the drain electrode of the first field effect transistor Q2；
4th audion D4, its low electrode connects the source electrode of the first field effect transistor Q2；
Electric capacity C1, its one end connects the source electrode of the first field effect transistor Q2；
Wherein, the 3rd diode D3, the 4th audion D4 and electric capacity C1 are additionally coupled to the emitter stage of audion Q3.
The voltage check device of a kind of high stability the most according to claim 1, it is characterised in that described voltage detecting
Circuit, including
First comparator U5, its high electricity end connects has the first reference voltage node V2 and low electricity to terminate into modulated drive signal；
Second comparator U6, its high electricity end connects has the second reference voltage node V3 and low electrode to access modulated drive signal；
Or door U4, its input port connects outfan and the outfan of the first comparator U5 of the second comparator U6.
The voltage check device of a kind of high stability the most according to claim 4, it is characterised in that described crosses punching detection
Circuit, including
NAND gate U3A, its input port connects or the outfan of door U4；
Second operational amplifier U2, its inverting input connects the 3rd reference voltage node V1, and in-phase input end accesses feedback
Signal and outfan are connected to the input port of NAND gate U3A；
Second field effect transistor Q1, its grid connects outfan and the drain electrode access modulated drive signal of the second operational amplifier U2.
The voltage check device of a kind of high stability the most according to claim 5, it is characterised in that the first described computing
Amplifier, its in-phase input end accesses feedback signal and inverting input connects the 3rd reference voltage node V1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610596093.8A CN106093532A (en) | 2016-07-26 | 2016-07-26 | A kind of voltage check device of high stability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610596093.8A CN106093532A (en) | 2016-07-26 | 2016-07-26 | A kind of voltage check device of high stability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106093532A true CN106093532A (en) | 2016-11-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610596093.8A Pending CN106093532A (en) | 2016-07-26 | 2016-07-26 | A kind of voltage check device of high stability |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107179433A (en) * | 2017-06-07 | 2017-09-19 | 上海乐野网络科技有限公司 | A kind of electric voltage observation circuit |
| CN107884604A (en) * | 2017-12-14 | 2018-04-06 | 池州职业技术学院 | A kind of optoelectronic switch break-make level sensitive circuit |
| CN108288955A (en) * | 2017-01-09 | 2018-07-17 | 亚德诺半导体集团 | Operational amplifier |
| CN111308161A (en) * | 2020-03-10 | 2020-06-19 | 福州瑞芯微电子股份有限公司 | Voltage sampling circuit and method |
| CN112730958A (en) * | 2020-12-22 | 2021-04-30 | 海光信息技术股份有限公司 | Voltage overshoot detection circuit |
-
2016
- 2016-07-26 CN CN201610596093.8A patent/CN106093532A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108288955A (en) * | 2017-01-09 | 2018-07-17 | 亚德诺半导体集团 | Operational amplifier |
| CN108288955B (en) * | 2017-01-09 | 2021-09-24 | 亚德诺半导体集团 | Operational amplifier |
| CN107179433A (en) * | 2017-06-07 | 2017-09-19 | 上海乐野网络科技有限公司 | A kind of electric voltage observation circuit |
| CN107884604A (en) * | 2017-12-14 | 2018-04-06 | 池州职业技术学院 | A kind of optoelectronic switch break-make level sensitive circuit |
| CN107884604B (en) * | 2017-12-14 | 2024-04-05 | 池州职业技术学院 | Photoelectric switch on-off level detection circuit |
| CN111308161A (en) * | 2020-03-10 | 2020-06-19 | 福州瑞芯微电子股份有限公司 | Voltage sampling circuit and method |
| CN111308161B (en) * | 2020-03-10 | 2022-04-19 | 福州瑞芯微电子股份有限公司 | Voltage sampling circuit and method |
| CN112730958A (en) * | 2020-12-22 | 2021-04-30 | 海光信息技术股份有限公司 | Voltage overshoot detection circuit |
| CN112730958B (en) * | 2020-12-22 | 2023-02-28 | 海光信息技术股份有限公司 | Voltage overshoot detection circuit |
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Application publication date: 20161109 |