CN106048712A - Growth process capable of reducing barium boron oxide (BBO) crystal envelope - Google Patents
Growth process capable of reducing barium boron oxide (BBO) crystal envelope Download PDFInfo
- Publication number
- CN106048712A CN106048712A CN201610419668.9A CN201610419668A CN106048712A CN 106048712 A CN106048712 A CN 106048712A CN 201610419668 A CN201610419668 A CN 201610419668A CN 106048712 A CN106048712 A CN 106048712A
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- CN
- China
- Prior art keywords
- bbo
- crystal
- growth
- platinum crucible
- growth process
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Provided is a growth process capable of reducing barium boron oxide (BBO) crystal envelope. According to the growth process, barium carbonate and boric acid are adopted as main raw materials, sodium fluoride is a fluxing agent, a self-made molten salt furnace and a platinum crucible are growth devices, the bottom of the platinum crucible is in a recessed arc shape, and low temperature phase BBO crystal growth by a flux method is performed. The bottom of the platinum crucible is in the recessed arc shape, melt convection is reinforced, and the BBO crystal envelope is effectively reduced.
Description
Technical field
The present invention relates to field of crystal growth, particularly to a kind of growth technique reducing bbo crystal envelope.
Background technology
Low-temperature phase barium metaborate is a kind of very important new nonlinear crystals measured, has wide transparency range, and big has
Effect Clock Multiplier Factor, big birefringence and high laser damage threshold, be widely used in Nd:YAG and Nd:YLF laser two,
Three, four, fifth harmonic, the frequency multiplication of dye laser, frequency tripling and mixing, the two of Ti:Sappire and Alexandrite laser, three,
Quadruple, optical parametric amplifier (OPA) and optical parametric oscillator (OPO), argon ion, ruby and Cu vapor laser
Frequency multiplication etc..Yet there are no the more preferable material of performance and replace it.
Molten-salt growth method (flux growth metrhod) is a kind of growing method commonly used in artificial crystal growth.It generally uses institute
The component that need to grow crystal is dissolved in flux, obtains required crystal by slow cooling.Its feature is to fit
Wide by property, suitable flux can be found for most crystal.
What barium metaborate β-BaB2O4 was commonly used is flux growth metrhod growth, after crystal growth to sidewall of crucible, stops operating,
Starting cooling growth, melt causes convection current mainly by own temperature gradient, and bottom the existence of flat crucible, convection current is insufficient, exists blind
The problems such as district, the crystal grown out is except center, and the easiest band envelope, affects crystal mass.
Summary of the invention
The present invention uses brium carbonate and boric acid to be primary raw material, and sodium fluoride is flux, self-control molten salt furnace and platinum crucible
For grower, in interior convex arch bottom platinum crucible.Utilize convex arch in crucible bottom, increase melt convection, reduce
Crystal envelope.
Accompanying drawing explanation
Fig. 1 is that bottom is in interior convex arch platinum crucible schematic diagram.
Detailed description of the invention
Embodiment one: weigh a certain amount of brium carbonate, boric acid and sodium fluoride, meets BaB2O4:NaF=2:1(mol ratio) in
Raw material pail mixes.Mixed is expected that melting is to reaction completely in the silicon carbide rod furnace of 1000 DEG C.The material melted is poured into bottom
In Platinum crucible in interior convex arch, being subsequently placed in molten salt furnace, be warming up to 980 DEG C, constant temperature 18h, then in saturation temperature
At above 10 DEG C.By the seed crystal that is fixed in advance on seed rod slowly down to molten surface, 4～10r/min rotate, and crystal is opened
Begin to grow, when crystal growth is soon to sidewall of crucible, stops crystalline substance and turn, start the speed cooling with 1 DEG C/day, until about 6 months,
Stop growing, it is thus achieved that bbo crystal blank.
Claims (1)
1. a high-quality bbo crystal growth technique, using brium carbonate and boric acid is primary raw material, and sodium fluoride is flux, from
Molten salt furnace processed and platinum crucible are that grower carries out molten-salt growth, it is characterised in that: in convex circular arc bottom platinum crucible
Shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610419668.9A CN106048712A (en) | 2016-06-14 | 2016-06-14 | Growth process capable of reducing barium boron oxide (BBO) crystal envelope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610419668.9A CN106048712A (en) | 2016-06-14 | 2016-06-14 | Growth process capable of reducing barium boron oxide (BBO) crystal envelope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106048712A true CN106048712A (en) | 2016-10-26 |
Family
ID=57168113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610419668.9A Pending CN106048712A (en) | 2016-06-14 | 2016-06-14 | Growth process capable of reducing barium boron oxide (BBO) crystal envelope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106048712A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106757341A (en) * | 2017-01-05 | 2017-05-31 | 福建福晶科技股份有限公司 | A kind of special growth technique for reducing bbo crystal envelope |
| CN107475771A (en) * | 2017-08-30 | 2017-12-15 | 福建福晶科技股份有限公司 | A kind of method of envelope among reduction bbo crystal |
| CN109112626A (en) * | 2018-10-25 | 2019-01-01 | 莱芜职业技术学院 | Non-linear optical crystal material β-BaB2O4Growing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102383182A (en) * | 2011-10-23 | 2012-03-21 | 福建福晶科技股份有限公司 | Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals |
| CN103757708A (en) * | 2014-01-17 | 2014-04-30 | 中国科学院福建物质结构研究所 | High temperature inorganic scintillation crystal growth crucible |
| CN105401211A (en) * | 2014-08-08 | 2016-03-16 | 上海超硅半导体有限公司 | Crystal growing furnace and method for drawing C-axis sapphire single crystal |
-
2016
- 2016-06-14 CN CN201610419668.9A patent/CN106048712A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102383182A (en) * | 2011-10-23 | 2012-03-21 | 福建福晶科技股份有限公司 | Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals |
| CN103757708A (en) * | 2014-01-17 | 2014-04-30 | 中国科学院福建物质结构研究所 | High temperature inorganic scintillation crystal growth crucible |
| CN105401211A (en) * | 2014-08-08 | 2016-03-16 | 上海超硅半导体有限公司 | Crystal growing furnace and method for drawing C-axis sapphire single crystal |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106757341A (en) * | 2017-01-05 | 2017-05-31 | 福建福晶科技股份有限公司 | A kind of special growth technique for reducing bbo crystal envelope |
| CN107475771A (en) * | 2017-08-30 | 2017-12-15 | 福建福晶科技股份有限公司 | A kind of method of envelope among reduction bbo crystal |
| CN109112626A (en) * | 2018-10-25 | 2019-01-01 | 莱芜职业技术学院 | Non-linear optical crystal material β-BaB2O4Growing method |
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| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161026 |