CN105914279A - Diode with luminous bottom - Google Patents
Diode with luminous bottom Download PDFInfo
- Publication number
- CN105914279A CN105914279A CN201610481301.XA CN201610481301A CN105914279A CN 105914279 A CN105914279 A CN 105914279A CN 201610481301 A CN201610481301 A CN 201610481301A CN 105914279 A CN105914279 A CN 105914279A
- Authority
- CN
- China
- Prior art keywords
- layer
- conductive layer
- diode
- substrate
- positive electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005401 electroluminescence Methods 0.000 claims abstract description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000012780 transparent material Substances 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims abstract description 6
- 239000007924 injection Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000007769 metal material Substances 0.000 claims abstract description 4
- 239000011787 zinc oxide Substances 0.000 claims abstract description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims abstract description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 8
- 230000005525 hole transport Effects 0.000 abstract 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 239000005361 soda-lime glass Substances 0.000 abstract 1
- 238000005192 partition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a diode with a luminous bottom. The diode is characterized by comprising a substrate made from a transparent material, wherein a positive electrode conductive layer made from a transparent conductive material, an electroluminescence layer and a negative electrode conductive layer made from a metallic material which are laminated on the substrate in sequence; the electroluminescence layer comprises a hole injection layer, a hole transport layer, an EL layer, an electron conveying layer and an electron injection layer from the bottom up in sequence; the positive electrode of a driving power supply is connected with the positive electrode conductive layer while the negative electrode of the driving power supply is connected with the negative electrode conductive layer; the transparent conductive material for preparing the positive electrode conductive layer can be indium tin oxide, indium zinc oxide or zinc oxide; and the transparent material for preparing the substrate can be quartz glass, soda-lime glass or mica. According to the diode provided by the invention, the substrate material and the positive electrode conductive layer material are properly selected, and the thickness ranges of the substrate material and the positive electrode conductive layer material are stipulated, so that the luminous efficiency of the diode is ensured under the premise that the corresponding functions of the diode are satisfied.
Description
Technical field
The present invention relates to active optical component, be specifically related to the diode of a kind of bottom-emission.
Background technology
Image display device, photo device often can use diode.Diode of the prior art, as
Really substrate position is bottom, and cathode conductive layer is top, then its isolychn is by top cathode conductive layer
Direction sends.Prior art also has the diode luminous by substrate, but universal due at diode
In making technology, backing material is thicker, and the material of anode conductive layer is the most transparent bad, so bottom
The luminous efficiency of light emitting diode is relatively low.
Summary of the invention
For the deficiencies in the prior art, the invention discloses the diode of a kind of bottom-emission.
Technical scheme is as follows:
The diode of a kind of bottom-emission, it is characterised in that include the substrate that transparent material is made, at substrate
On be sequentially laminated with anode conductive layer that transparent conductive material makes, electroluminescence layer and by metal material system
The cathode conductive layer become；Described electroluminescence layer include the most successively hole injection layer, hole transporting layer,
EL layer, electron supplying layer and electron injecting layer；Drive the positive pole jointed anode conductive layer of power supply, drive power supply
Negative pole connect cathode conductive layer；The transparent conductive material making anode conductive layer can be tin indium oxide, oxygen
Change indium zinc or zinc oxide；Making the transparent material of substrate can be that quartz glass, calcium receive glass or Muscovitum.
Its further technical scheme is, the thickness of described anode conductive layer is 50～200nm.
Its further technical scheme is, the thickness of described substrate is 100～600nm.
The method have the benefit that:
What the present invention was appropriate have selected the material of backing material and anode conductive layer, and defines the thickness of the two
Scope so that it is in the case of meeting corresponding function, it is ensured that the luminous efficiency of diode.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Detailed description of the invention
Fig. 1 is the structural representation of the present invention.As it is shown in figure 1, the present invention includes the lining that transparent material is made
The end 1, on substrate 1, it is sequentially laminated with anode conductive layer 2, electroluminescent that transparent conductive material is made
Layer 3 and the cathode conductive layer 4 being made up of metal material；Described electroluminescence layer 3 includes the most successively
Hole injection layer 31, hole transporting layer 32, EL layer 33, electron supplying layer 34 and electron injecting layer 35；
Drive the positive pole jointed anode conductive layer 2 of power supply, drive the negative pole of power supply to connect cathode conductive layer 4；Make
The transparent conductive material of anode conductive layer 2 can be tin indium oxide, indium zinc oxide or zinc oxide；Make lining
The transparent material at the end 1 can be that quartz glass, calcium receive glass or Muscovitum.
When anode conductive layer 2 and cathode conductive layer 4 are applied voltage, think electroluminescent from anode conductive layer 2
Photosphere 3 injects hole, and, inject electronics from cathode conductive layer 4 to electroluminescence layer 3, and from anode
The light sent at electroluminescence layer 3 is taken out in conductive layer 2 side.
Preferably, the thickness of anode conductive layer 2 is 50～200nm.The thickness of substrate 1 is 100～600nm.
Additionally, electroluminescence layer 3 also includes the hole injection layer 31 being driven power supply to inject hole；By hole
To EL layer 33 (i.e. luminescent layer) input hole and the hole transporting layer 21 of partition electronics；The electricity that conveying is come
Son and hole combine and the EL layer 33 of luminescence；By electronics to the conveying of EL layer and the electronics in partition hole
Transfer layer 34, and the electron injecting layer 35 being driven power supply to inject electronics.
Above-described is only the preferred embodiment of the present invention, the invention is not restricted to above example.Permissible
Understanding, those skilled in the art the most directly derive or associate
The oher improvements and changes arrived, within being all considered as being included in protection scope of the present invention.
Claims (3)
1. the diode of a bottom-emission, it is characterised in that include the substrate (1) that transparent material is made,
Anode conductive layer (2), electroluminescent that transparent conductive material is made it is sequentially laminated with on substrate (1)
Layer (3) and the cathode conductive layer (4) being made up of metal material；Described electroluminescence layer (3) is from the bottom to top
Include hole injection layer (31), hole transporting layer (32), EL layer (33), electron supplying layer (34) successively
With electron injecting layer (35)；Drive positive pole jointed anode conductive layer (2) of power supply, drive the negative pole of power supply
Connect cathode conductive layer (4)；Make the transparent conductive material of anode conductive layer (2) can be tin indium oxide,
Indium zinc oxide or zinc oxide；Making the transparent material of substrate (1) can be that quartz glass, calcium receive glass
Or Muscovitum.
2. the diode of bottom-emission as claimed in claim 1, it is characterised in that described anode conducting
The thickness of layer (2) is 50～200nm.
3. the diode of bottom-emission as claimed in claim 1, it is characterised in that described substrate (1)
Thickness be 100～600nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610481301.XA CN105914279A (en) | 2016-06-28 | 2016-06-28 | Diode with luminous bottom |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610481301.XA CN105914279A (en) | 2016-06-28 | 2016-06-28 | Diode with luminous bottom |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105914279A true CN105914279A (en) | 2016-08-31 |
Family
ID=56758653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610481301.XA Pending CN105914279A (en) | 2016-06-28 | 2016-06-28 | Diode with luminous bottom |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105914279A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1170383A (en) * | 1994-12-13 | 1998-01-14 | 普林斯顿大学理事会 | Multicolor organic light emitting devices |
| CN1499653A (en) * | 2002-11-06 | 2004-05-26 | ����Sdi��ʽ���� | Organic LED for displaying device and its mfg. method |
-
2016
- 2016-06-28 CN CN201610481301.XA patent/CN105914279A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1170383A (en) * | 1994-12-13 | 1998-01-14 | 普林斯顿大学理事会 | Multicolor organic light emitting devices |
| CN1499653A (en) * | 2002-11-06 | 2004-05-26 | ����Sdi��ʽ���� | Organic LED for displaying device and its mfg. method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160831 |
|
| WD01 | Invention patent application deemed withdrawn after publication |