CN105914141B - A kind of method forming grid groove and corresponding semiconductor structure - Google Patents
A kind of method forming grid groove and corresponding semiconductor structure Download PDFInfo
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- CN105914141B CN105914141B CN201610473868.2A CN201610473868A CN105914141B CN 105914141 B CN105914141 B CN 105914141B CN 201610473868 A CN201610473868 A CN 201610473868A CN 105914141 B CN105914141 B CN 105914141B
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 230000008033 biological extinction Effects 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 30
- 238000005259 measurement Methods 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000012546 transfer Methods 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 28
- 238000007254 oxidation reaction Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011513 prestressed concrete Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
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Abstract
The present invention relates to three-dimension device production fields, more particularly to a kind of method and the corresponding semiconductor structure of formation grid groove, by alignment mark pre-buried in stack architecture, deposited hard mask layer is simultaneously etched so that the hard mask layer, which at least covers, is located at alignment mark top；Then extinction film is deposited, and is etched so that the extinction film is above alignment mark has an opening；Then contraposition measurement is carried out, marks grid groove corresponding to be etched label of the alignment mark on hard mask layer；It is etched further according to the label to be etched to form grid groove.The present invention is located at the extinction film above alignment mark by opening, and the incident light when carrying out contraposition measurement is enabled smoothly to penetrate and reflect, so as to accurately measure the position of alignment mark, the accurate transfer of gate pattern when guaranteeing channel etching.
Description
Technical field
It corresponding leads the present invention relates to three-dimension device production field more particularly to a kind of method for forming grid groove and partly
Body structure.
Background technique
The prior art produce stacked memory formed grid groove when, it usually needs stack architecture (such as alternately heap
39 layers folded of nitrogen oxidation layer) on deposit one layer of thicker hard mask layer, as the anti-reflecting layer of photoetching process, to guarantee to etch
The pattern and critical size of post tensioned unbonded prestressed concrete channel.
But when thickness reaches a certain level, (this usual thickness is much smaller than can guarantee grid groove to anti-reflecting layer
The thickness of pattern and critical size) have high absorptance, can not transmitted light so as to cause for etch align alignment
Label can not measure.
As shown in Figure 1, anti-reflecting layer (Kodiak film) in 400nm transmissivity close to zero.On the one hand, as shown in Fig. 2,
Kodiak film only in the case where relatively thin (referring to Fig.1 it is found that thickness need to be less than 400nm), can guarantee light transmittance, just to ensure
Light can penetrate Kodiak film (being denoted as 01 in Fig. 2) and reach alignment mark and (be denoted as in Alignment mark, Fig. 2
02) it is reflected, and by alignment mark to find accurately etching point at the top of stack architecture；And on the other hand, in order to guarantee to lose
Carve post tensioned unbonded prestressed concrete channel pattern and critical size, need to deposit on stack architecture at least 1.1 μ m thicks Kodiak film (by
The light transmittance of the Kodiak film of 1.1 μ m thicks is almost nil known to Fig. 1, is unable to complete the measurement of alignment mark at all) it could protect
Card etch process is normally carried out.
Summary of the invention
In view of above-mentioned technical problem, the present invention is intended to provide a kind of method for forming grid groove and corresponding semiconductor junction
Structure, to solve that alignment mark can not be measured because Kodiak film is thicker in the prior art, so as to cause grid when the etching of subsequent channel
The problem of pole figure case can not precisely align.
The main technical schemes of present invention solution above-mentioned technical problem are as follows:
A method of forming grid groove, which is characterized in that the described method includes:
A stack architecture for being embedded with alignment mark is provided, one hard mask layer of deposition covers the upper table of the stack architecture
Face；
The pattern of the hard mask layer is defined, with part of at least reserved bit above the alignment mark hard exposure mask
Layer；
The surface of hard mask layer after changing pattern and the upper surface of stack architecture exposure deposit extinction film；
The pattern of the extinction film is defined, to open the extinction film being located above the alignment mark, is made after changing pattern
Extinction film above the alignment mark have one opening；
Carry out contraposition measurement using the opening, in it is described change pattern after hard mask layer on measure with it is described right
Fiducial mark remembers vertical corresponding label to be etched；
The upper surface of hard mask layer after depositing the change pattern of the photoresist overlay in addition to the label to be etched
And it is described change pattern after extinction film upper surface, and using the photoresist be described in mask etch change pattern after it is hard
Mask layer and the stack architecture are to form grid groove.
Preferably, in the method for above-mentioned formation grid groove, the step of defining the pattern of the hard mask layer, includes:
Photoresist is deposited on the hard mask layer and is etched to form window exposure mask, and the window exposure mask covering is located at
Above the alignment mark；
Using the window exposure mask as hard mask layer described in mask etch, at least reserved bit above the alignment mark
The part hard mask layer；
Wherein, the upper surface that the hard mask layer stops at the top layer oxide layer of the stack architecture is etched.
Preferably, in the method for above-mentioned formation grid groove, it is highly selective dry for etching the mode of the hard mask layer
Method etching.
Preferably, in the method for above-mentioned formation grid groove, the thickness of the extinction film is more than or equal to 1.1 μm.
Preferably, in the method for above-mentioned formation grid groove, the step of defining the pattern of the extinction film, includes:
Photoresist is deposited on the extinction film and is etched, so that the photoresist exposure after etching is positioned at described to fiducial mark
Remember the extinction film of top；
Using the photoresist after the etching as extinction film described in mask etch, so as to change the extinction film after pattern in described
There is an opening above alignment mark；
Wherein, it etches the extinction film and stops at the hard mask layer upper surface after the change pattern.
Preferably, in the method for above-mentioned formation grid groove, carrying out the step of contraposition measures includes:
Using repeatedly to measuring instrument, incident light penetrates the hard mask layer changed after pattern and described by the opening
Stack architecture reaches the alignment mark and reflects, to measure and the alignment on the hard mask layer after the change pattern
Mark vertical corresponding label to be etched.
The present invention also provides a kind of semiconductor structures, which is characterized in that applied to preparing grid groove, the semiconductor junction
Structure includes:
Stack architecture is embedded with alignment mark in the stack architecture；
Hard mask layer is partially covered in the upper surface of the stack architecture and is located at the top of the alignment mark；
Extinction film is covered in the surface of the hard mask layer exposure and the upper surface of stack architecture exposure；
Wherein, the extinction film is located at the part above the alignment mark with an opening, to utilize the opening to institute
It states alignment mark and carries out contraposition measurement, prepare label to be etched needed for the grid groove to be formed.
Preferably, in above-mentioned semiconductor structure, the thickness positioned at the extinction film of the open bottom is pre- less than one
If thickness；
Wherein, the preset thickness can transmit the critical of the extinction film for measurement light in contraposition measurement operation
Thickness.
Preferably, in above-mentioned semiconductor structure, the preset thickness is less than or equal to 2000 angstroms.
Preferably, in above-mentioned semiconductor structure, upper table of the opening through the extinction film to the hard mask layer
Face.
Above-mentioned technical proposal has the following advantages that or the utility model has the advantages that the present invention is located at the suction above alignment mark by opening
Light film enables the incident light when carrying out contraposition measurement smoothly to penetrate and reflect, so as to accurately measure to fiducial mark
The position of note, gate pattern precisely aligns when guaranteeing the etching of subsequent channel；And the present invention is also made by deposited silicon nitride layer
For hard mask layer, alignment mark is protected not to be damaged in grid groove etching.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is Kodiak film thickness and light transmittance curve figure；
Fig. 2 is light incidence reflectogram when alignment mark measures；
Fig. 3 is the method flow diagram of formation grid groove of the invention；
Fig. 4~Figure 13 is each step structure chart in an embodiment of the method that the present invention forms grid groove.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.When
So other than these detailed descriptions, the present invention can also have other embodiments.
The method of formation grid groove of the invention, is mainly used in stack architecture, alignment is embedded in the stack architecture
Label (alignment mark, or be register mark (overlay mark)), as shown in Figure 3, comprising: first deposited hard mask
Layer, and etch so that the hard mask layer, which at least covers, is located at alignment mark top；Then extinction film is deposited, and is etched so that the suction
Light film has an opening above alignment mark；Then alignment measurement is carried out, grid groove is marked and exists corresponding to alignment mark
Label to be etched on hard mask layer；It is etched further according to the label to be etched to form grid groove.
Each step of the method for formation grid groove of the invention is elaborated below with reference to specific embodiment and attached drawing
Suddenly.
The first step provides a stack architecture, which includes the semiconductor substrate (for example, silicon substrate) of bottom, sinks
The long-pending nitride multilayer film layer being alternately stacked and the multilayer oxidation film layer (oxygen being usually sequentially depositing from the bottom to top on a silicon substrate
Change film-nitride film-oxidation film-nitride film-...-oxidation film, stacking number can change according to specific process requirements, such as
It is 39 layers), and in at least one layer of top layer oxidation for nitride multilayer film layer and multilayer the oxidation film layer deposition being alternately stacked
Layer (for example, silica SiO2).Certain stack architecture can also be according to different technique in addition to described core film layer
Remaining film layer is deposited, because those film layers are not belonging to innovation range of the invention, details are not described herein again, but this is not construed as to this
The limitation of invention.On stack architecture, hard mask layer of one layer of silicon nitride (SIN) layer as subsequent etch is deposited, to protect
Alignment mark is not damaged when subsequent progress grid groove etching.The structure formed after SIN layers of deposition (needs to infuse as shown in Figure 4
It anticipates, stack architecture is depicted as a unified film layer for convenience of showing by all diagrams in the present embodiment, that is, is not known and is distinguished
Silicon substrate, the nitride multilayer film layer and the film layers such as multilayer oxidation film layer and top layer oxide layer that are alternately stacked out), wherein label 1
For stack architecture, label 2 is SIN layers.
As a preferred embodiment, nitride multilayer film layer and multilayer oxidation that alignment mark 10 is alternately stacked in deposition
It is embedded in corresponding position on silicon substrate in advance according to whole design needs before film layer, therefore is shown as from diagram to fiducial mark
Note 10 is located at the bottom of stack architecture 1.Further, the thickness for being deposited on the SIN layer 2 on stack architecture 1 is based on stack architecture 1
Stacking thickness be adjusted, with the subsequent etching process of optimal adaptation.
Second step defines the pattern of SIN layer 2.Referring to Fig. 5, photoresist is deposited on SIN layer 2 and is etched to form window
Mouth exposure mask 20, which vivid can be similar to an island area part and be covered in 2 top of SIN floor, and vertically correspond to pre-buried
Alignment mark 10 in stack architecture 1, wherein the overlay area of window exposure mask 20 is greater than the region of alignment mark 10.Then with
Window exposure mask 20 is mask etch SIN layer 2 (upper surface that this step etching stops the top layer oxide layer of stack architecture 1), to change
The pattern for becoming SIN layer 2, forms structure as shown in FIG. 6.Wherein, label 21 is the SIN layer changed after pattern, and SIN layer 21 is at least
Covering is located at 10 top of alignment mark.
It is highly selective dry for etching SIN layer 2 as a preferred embodiment, in this step and forming the technique of SIN layer 21
Method etch (high selectivity dry etch process), with accurately control etching after SIN layer 21 section angle
Degree, to guarantee the smooth deposition of subsequent film.
The upper surface of the stack architecture 1 of third step, upper surface and side wall in SIN layer 21, and exposure deposits one layer of suction
Light film 3 forms structure as shown in Figure 7.Preferably, which can be selected Kodiak film, the antireflection as photoetching process
Layer improves photoetching process, and Kodiak film is one kind of APF, APF (Advanced Pattern Film) is AMAT (using material
Material) title material defining of company, main component is a-C (amorphous Carbon, amorphous carbon).
As a preferred embodiment, the thickness of Kodiak film is deposited as being more than or equal to 1.1 μm, to guarantee subsequent etch
The pattern and critical size (CD, Critical Dimension) of grid groove
4th step defines the pattern of Kodiak film 3.Referring to Fig. 8, deposition photoresist 4 covers the upper surface of Kodiak film 3,
And etch to form an opening 30 on Kodiak film 3, the opening 30 vertically it is corresponding be embedded in advance in stack architecture 1 to fiducial mark
Note 10, and the region area of opening 30 is greater than the region area of alignment mark 10.It then is exposure mask with the photoresist 4 after etching
It etches Kodiak film 3 (upper surface that step etching Kodiak film 3 stops at SIN layer 21), so that the Kodiak film 31 after etching
Vertically correspond to alignment mark 10 (region area that the region area of opening 310 is greater than alignment mark 10) with an opening 310,
To form structure as shown in Figure 9.
Semiconductor structure of the invention forms the step.Referring to structure shown in Fig. 9, semiconductor structure packet of the invention
It includes: stack architecture 1, it is (not specific in figure to mark including the nitride multilayer layer and multilayer oxide layer that are alternately stacked and top layer oxide layer
Show), and alignment mark 10 is embedded in stack architecture；Hard mask layer (specially silicon nitride SIN hard mask layer) 21, be located at pair
On fiducial mark note 10 and part is covered in the upper surface of stack architecture 1；Extinction film (specially Kodiak film) 31, is covered in and covers firmly
The surface of the exposure of mold layer 21 and the upper surface of the exposure of stack architecture 1；Wherein, extinction film 31 is located at the portion of 10 top of alignment mark
Point there is an opening 310, to carry out contraposition measurement to alignment mark 10 using the opening, subsequent prepares grid groove institute to be formed
The label to be etched needed.
As a preferred embodiment, it is located at the thickness of the extinction film 31 of 310 bottoms of opening herein less than a default thickness
Degree, the preset thickness can transmit the critical thickness of extinction film 31 for measurement light in contraposition measurement operation.Such as the critical thickness
Degree is less than or equal to 2000 angstroms.It should be noted that in the configuration shown in fig. 9, opening 310 is through extinction film 31 until hard mask
The upper surface of layer 21.In actual manufacturing process, in the extinction film 31 for being located at 310 bottoms of opening that this step etching is formed
Thickness, which can be zero, (namely is etched directly into the upper surface of hard mask layer 21, subsequent when carrying out contraposition measurement, incident light directly shines
It is mapped to the upper surface of hard mask layer 21), or one layer of very thin extinction film can also be left in 310 bottoms that are open, it specifically can basis
Actual demand is adjusted, as long as guaranteeing that measurement light is transmissive to leave in 310 bottoms that are open in subsequent contraposition measurement operation
Extinction film.
5th step carries out contraposition measurement using opening 310, can be used for example repeatedly to measuring instrument (Overlay) or remaining
General alignment measuring tool in the industry, incident light penetrate SIN layer 21 and stack architecture 1 by opening 310, reach to fiducial mark
Note 10 simultaneously reflects, to form corresponding label 100 to be etched vertical with alignment mark 10 on SIN layer 21, referring to Fig.1 shown in 0.
The label 100 to be etched is the etching reference point of grid groove, because what Kodiak film 31 had above alignment mark 10 opens
Mouth 310, incident light can successfully penetrate SIN layer 21 and stack architecture 1 reaches alignment mark 10, without by thicker
Kodiak film 31 absorb, so as on SIN layer 21 formation subsequent etch grid groove reference point so that subsequent etching
Process can be accurately aligned, it is ensured that the accurate transfer of gate patterns.
6th step, the upper surface of SIN layer 21 of the deposition covering of photoresist 5 in addition to label 100 to be etched and Kodiak
The upper surface of film 3, as shown in figure 11；And with the photoresist 5 be exposure mask etch vertically downward SIN layer 21 and stack architecture 1 up to
Alignment mark 10, to form grid groove as shown in figure 12 (namely the vertical channel formed in stack architecture 1) 6.
7th step after forming grid groove 6, removes remaining film layer on stack architecture 1, such as using H3PO4It carries out wet
Method etching forms the heap for being formed with grid groove 6 as shown in fig. 13 that with remaining SIN layer 21 after removal etching grid groove 6
Stack architecture.
In conclusion the present invention is located at the Kodiak film above alignment mark by opening, so that carrying out contraposition measurement
When incident light smoothly can penetrate and reflect, so as to accurately measure the position of alignment mark, to guarantee subsequent channel
Gate pattern precisely aligns when etching；And the present invention also passes through deposited silicon nitride layer as hard mask layer, loses in grid groove
Alignment mark is protected not to be damaged when quarter.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly be will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering true intention and range of the invention as.It is weighing
The range and content of any and all equivalences, are all considered as still belonging to the intent and scope of the invention within the scope of sharp claim.
Claims (7)
1. a kind of method for forming grid groove, which is characterized in that the described method includes:
A stack architecture for being embedded with alignment mark is provided, one hard mask layer of deposition covers the upper surface of the stack architecture；
The pattern of the hard mask layer is defined, with part of at least reserved bit above the alignment mark hard mask layer；
The surface of hard mask layer after changing pattern and the upper surface of stack architecture exposure deposit extinction film；
The pattern of the extinction film is defined, to open the extinction film being located above the alignment mark, makes to change the suction after pattern
Light film has an opening above the alignment mark；
Contraposition measurement is carried out using the opening, to measure with described on the hard mask layer after the change pattern to fiducial mark
Remember vertical corresponding label to be etched；
The upper surface of hard mask layer after depositing the change pattern of the photoresist overlay in addition to the label to be etched and
The upper surface of extinction film after the change pattern, and using the photoresist as the hard mask after change pattern described in mask etch
Layer and the stack architecture are to form grid groove；
The hard mask layer after etching is shear-face angle；
Positioned at the open bottom the extinction film thickness less than a preset thickness, and the preset thickness is 2000 angstroms；
The step of defining the pattern of the hard mask layer include:
Photoresist is deposited on the hard mask layer and is etched to form window exposure mask, and the window exposure mask covering is located at described
Above alignment mark, the overlay area of the window exposure mask is greater than the region of the alignment mark；
Using the window exposure mask as hard mask layer described in mask etch, with part of at least reserved bit above the alignment mark
The hard mask layer；
Wherein, the upper surface that the hard mask layer stops at the top layer oxide layer of the stack architecture is etched；
The step of defining the pattern of the extinction film include:
Photoresist is deposited on the extinction film and is etched, so that the photoresist exposure after etching is located on the alignment mark
The extinction film of side；
Using the photoresist after the etching as extinction film described in mask etch, so as to change the extinction film after pattern in the alignment
Label top has an opening, and the region area of the opening is greater than the region area of the alignment mark；
Wherein, it etches the extinction film and stops at the hard mask layer upper surface after the change pattern.
2. forming the method for grid groove as described in claim 1, which is characterized in that the mode for etching the hard mask layer is
Highly selective dry etching.
3. forming the method for grid groove as described in claim 1, which is characterized in that the thickness of the extinction film is more than or equal to
1.1μm。
4. forming the method for grid groove as described in claim 1, which is characterized in that the step of carrying out contraposition measurement is wrapped
It includes:
Using repeatedly to measuring instrument, incident light is by the opening, hard mask layer and the storehouse after penetrating the change pattern
Structure reaches the alignment mark and reflects, to measure and the alignment mark on the hard mask layer after the change pattern
Vertical corresponding label to be etched.
5. a kind of semiconductor structure, which is characterized in that applied to preparing grid groove, the semiconductor structure includes:
Stack architecture is embedded with alignment mark in the stack architecture；
Hard mask layer is partially covered in the upper surface of the stack architecture and is located at the top of the alignment mark；
Extinction film is covered in the surface of the hard mask layer exposure and the upper surface of stack architecture exposure；
Wherein, the extinction film is located at the part above the alignment mark with an opening, to utilize the opening to described right
Fiducial mark remembers row contraposition measurement into, prepares label to be etched needed for the grid groove to be formed；
The hard mask layer after etching is shear-face angle；
Positioned at the open bottom the extinction film thickness less than a preset thickness, and the preset thickness is 2000 angstroms；
Photoresist is deposited on the hard mask layer and is etched to form window exposure mask, and the window exposure mask covering is located at described
Above alignment mark, the overlay area of the window exposure mask is greater than the region of the alignment mark；
Using the window exposure mask as hard mask layer described in mask etch, with part of at least reserved bit above the alignment mark
The hard mask layer；
Wherein, the upper surface that the hard mask layer stops at the top layer oxide layer of the stack architecture is etched；
And
Photoresist is deposited on the extinction film and is etched, so that the photoresist exposure after etching is located on the alignment mark
The extinction film of side；
Using the photoresist after the etching as extinction film described in mask etch, so as to change the extinction film after pattern in the alignment
Label top has an opening, and the region area of the opening is greater than the region area of the alignment mark；
Wherein, it etches the extinction film and stops at the hard mask layer upper surface after the change pattern.
6. semiconductor structure as claimed in claim 5, which is characterized in that positioned at the thickness of the extinction film of the open bottom
Degree is less than a preset thickness；
Wherein, the preset thickness can transmit the critical thickness of the extinction film for measurement light in the contraposition measurement operation
Degree.
7. semiconductor structure as claimed in claim 5, which is characterized in that the opening is covered through the extinction film to described firmly
The upper surface of mold layer.
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| CN112687757B (en) * | 2020-12-24 | 2023-02-03 | 芯思杰技术(深圳)股份有限公司 | Photoelectric detection chip manufacturing method |
| CN113421834B (en) * | 2021-06-22 | 2022-06-14 | 长江存储科技有限责任公司 | Three-dimensional memory and detection method |
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|---|---|---|---|---|
| US5889335A (en) * | 1997-09-09 | 1999-03-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| CN1614747A (en) * | 2003-11-07 | 2005-05-11 | 南亚科技股份有限公司 | Improved method for forming contacting holes |
| CN105353592A (en) * | 2015-11-25 | 2016-02-24 | 武汉新芯集成电路制造有限公司 | Photoetching process alignment method |
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2016
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889335A (en) * | 1997-09-09 | 1999-03-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| CN1614747A (en) * | 2003-11-07 | 2005-05-11 | 南亚科技股份有限公司 | Improved method for forming contacting holes |
| CN105353592A (en) * | 2015-11-25 | 2016-02-24 | 武汉新芯集成电路制造有限公司 | Photoetching process alignment method |
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