CN105895022A - AMOLED pixel driving circuit and pixel driving method - Google Patents
AMOLED pixel driving circuit and pixel driving method Download PDFInfo
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- CN105895022A CN105895022A CN201610229276.6A CN201610229276A CN105895022A CN 105895022 A CN105895022 A CN 105895022A CN 201610229276 A CN201610229276 A CN 201610229276A CN 105895022 A CN105895022 A CN 105895022A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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Abstract
The invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit comprises an inner pixel circuit and an outer compensation circuit. The inner pixel circuit is provided with at least one sub-pixel circuit, which is provided with a first driving thin film transistor (T1 1, T1 2.. T1 N), a second switch thin film transistor (T2 1, T2 2.. T 2N), an inner capacitor (C1 1, C 1 2.. C1 N), and an organic light-emitting diode (OLE). The outer compensation circuit is provided with a third switch thin film transistor (T3), a fourth switch thin film transistor (T4), a fifth switch thin film transistor (T5), a sixth switch thin film transistor (T6), and an outer capacitor (C2). The single or sub-pixel circuit of the inner pixel circuit adopts a 2T1C circuit structure, and the outer compensation circuit is used to compensate the non-uniformity and the drifting of the threshold voltage of the driving thin film transistor, and therefore the long-term uniform light emission of the AMOLED is realized, the power consumption is reduced, and the resolution ratio is increased.
Description
Technical field
The present invention relates to technical field of AMOLED display, be specifically related to a kind of AMOLED pixel-driving circuit and image element driving method.
Background technology
Existing active matrix organic light-emitting diode (Active Matrix/Organic Light Emitting Diode, it is called for short AMOLED) mainly use low-temperature polysilicon film transistor (LTPS TFT) backboard, but owing to the grain size of low-temperature polysilicon film transistor differs, boundary alignments is unordered, cause its electrology characteristic lack of homogeneity, therefore, use simplest 2T1C circuit, i.e. two thin film transistor (TFT)s and the circuit of an electric capacity composition, it is difficult to meet the requirement of AMOLED uniformly light-emitting；And due to the existence of crystal boundary, the leakage current of low-temperature polysilicon film transistor (LTPS TFT) is very big, this allows for image element circuit must have sufficiently large storage electric capacity to show the undistorted of content in ensureing a frame.And the area that big storage electric capacity takies is greatly, making single elemental area increase, AMOLED resolution declines.
For improving the electrology characteristic uniformity of low-temperature polysilicon film transistor (LTPS TFT) backboard, need single or sub-pixel are interiorly or exteriorly compensated.In prior art, use internal compensation mode, i.e. by increasing the thin film transistor (TFT) within single or sub-pixel and electric capacity quantity, improve the electricity uniformity of LTPS TFT backplate；Existing AMOLED display screen, it is single or sub-pixel internal circuit configuration is 7T1C, i.e. seven thin film transistor (TFT)s and the circuit of an electric capacity composition, although this mode makes low-temperature polysilicon film transistor (LTPS TFT) backboard obtain uniform electrology characteristic, but, owing to sub-pixel internal circuit configuration is complicated, thin film transistor (TFT) and electric capacity quantity are more, need the area taken bigger, even if using top light emitting (top emission) structure, also be difficult to meet high-resolution (> 500ppi) display requirement, therefore, must develop and more suitably compensate circuit and compensation method.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the present invention provides a kind of AMOLED pixel-driving circuit and image element driving method, by making the single of interior pixels circuit or sub-pixel circuits use 2T1C circuit structure, and inhomogeneities and the drift of the threshold voltage of thin film transistor (TFT) is driven by external compensation circuit compensation, make the long-time uniformly light-emitting of AMOLED, and reduce power consumption, improve resolution.
For solving the problems referred to above, one aspect of the present invention provides a kind of AMOLED pixel-driving circuit, including interior pixels circuit and external compensation circuit；
Described interior pixels circuit is provided with at least one sub-pixel circuits, and described sub-pixel circuits is provided with the first driving thin film transistor (TFT), second switch thin film transistor (TFT), internal capacitance, Organic Light Emitting Diode；First drives the grid of thin film transistor (TFT) to connect internal node, and its drain electrode concatenates organic LED power source voltage, and its source electrode connects external compensation circuit；The grid of second switch thin film transistor (TFT) connects scan signal line, and its source electrode connects data signal line, and its drain electrode connects described internal node；One end of internal capacitance connects described internal node, and the other end connects external compensation circuit；
Described external compensation circuit is provided with the 3rd switching thin-film transistor, the 4th switching thin-film transistor, the 5th switching thin-film transistor, the 6th switching thin-film transistor, external capacitive；The grid of the 4th switching thin-film transistor connects first and is connected the two ends of external capacitive at front scan signal line, its source electrode respectively with drain electrode, and the two ends of described external capacitive connect the first external node and the second external node respectively；Described first external node is also connected with the other end of described internal capacitance；The grid of the 5th switching thin-film transistor connects the first scan signal line, its source ground, and its drain electrode connects described first external node；The grid of the 3rd switching thin-film transistor connects the second scan signal line, and its source electrode connects described second external node, and its drain electrode connects the described first source electrode driving thin film transistor (TFT)；6th switching thin-film transistor (T6) grid connect the 3rd scan signal line, its source ground, its drain electrode connect described second external node；3rd scan signal line connects the grid of described second switch thin film transistor (TFT).
Further, described first driving thin film transistor (TFT), the 3rd switching thin-film transistor, the 4th switching thin-film transistor, the 5th switching thin-film transistor, the 6th switching thin-film transistor are low-temperature polysilicon film transistor, and described low-temperature polysilicon film transistor is P-type TFT；Described second switch thin film transistor (TFT) is oxide thin film transistor, and described oxide thin film transistor is N-type oxide thin film transistor.
Another aspect of the present invention provides a kind of AMOLED image element driving method, comprises the steps:
S1. thin film transistor (TFT), second switch thin film transistor (TFT), internal capacitance, Organic Light Emitting Diode, the 3rd switching thin-film transistor, the 4th switching thin-film transistor, the 5th switching thin-film transistor, the 6th switching thin-film transistor, external capacitive and first is driven to connect into described AMOLED pixel-driving circuit at front scan signal line, the first scan signal line, the second scan signal line, the 3rd scan signal line, data signal line by first；
S2. external capacitive reset phase:
First drives thin film transistor (TFT), the 4th switching thin-film transistor, the 6th switching thin-film transistor conducting, and other thin film transistor (TFT)s end, and external capacitive are reset；
S3. external capacitive stores the threshold voltage V of the first driving thin film transistor (TFT)th-drivingTFTStage:
Data signal line input makes interior pixels circuit produce the fixed voltage V of electric currentlowFirst drives thin film transistor (TFT), second switch thin film transistor (TFT), the 3rd switching thin-film transistor, the 5th switching thin-film transistor conducting, other thin film transistor (TFT)s end, and produced by interior pixels circuit, electric current flows into external capacitive, and described external capacitive charges to its voltage V storedBAFor (Vlow-Vth-drivingTFT)；
S4. the gray scale voltage stage of internal capacitance storage data signal line input:
Data signal line input gray scale voltage Vdata, first drives thin film transistor (TFT), second switch thin film transistor (TFT), the 5th switching thin-film transistor conducting, and other thin film transistor (TFT)s end, the voltage V that internal capacitance storesGA=Vdata；
S5. internal capacitance concatenates the stage with external capacitive:
First drives thin film transistor (TFT), the 6th switching thin-film transistor conducting, and other thin film transistor (TFT)s end, and internal capacitance concatenates voltage V with external capacitiveGB=(VGA+VAB)=(Vdata–Vlow+Vth-drivingTFT)；
S6. the organic light-emitting diode stage:
First drives thin film transistor (TFT), the 3rd switching thin-film transistor, the 6th switching thin-film transistor conducting, and other thin film transistor (TFT)s end, and internal capacitance concatenates with external capacitive, and first drives thin film transistor (TFT) to be operated in saturation region, and first drives film crystal tube current IOLED=(1/2) * μ * Cox* (W/L) * (Vdata-Vlow)2。
Further, in S1, first provides low level at front scan signal line, the 3rd scan signal line, and other holding wires provide high level；
In S2, the first scan signal line, the second scan signal line, data signal line provide low level, and other holding wires provide high level；
In S3, the first scan signal line, data signal line provide low level, and other holding wires provide high level；
In S4, the 3rd scan signal line provides low level, and other holding wires provide high level；
In S5, the second scan signal line, the 3rd scan signal line provide low level, and other holding wires provide high level.
The present invention obtains and provides the benefit that:
By making the single of interior pixels circuit or sub-pixel circuits use 2T1C circuit structure, and inhomogeneities and the drift of the threshold voltage of thin film transistor (TFT) is driven by external compensation circuit compensation, stable current drive characteristics is provided, makes the long-time uniformly light-emitting of AMOLED；
The present invention uses oxide thin film transistor (Oxide TFT) as switching thin-film transistor, owing to the leakage current of oxide thin film transistor (Oxide TFT) is than low-temperature polysilicon film transistor (LTPS TFT) low 2-3 the order of magnitude, therefore, storage inside capacity area will be reduced, thus reduce the area of single sub-pixel, it is thus achieved that reduce power consumption, the technique effect of raising AMOLED resolution；
In the AMOLED pixel-driving circuit of the present invention, low-temperature polysilicon film transistor (LTPS TFT) all uses P-type TFT, reduces doping MASK quantity, reduces cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention a kind of AMOLED pixel-driving circuit；
Fig. 2 is the control signal time diagram of AMOLED pixel-driving circuit in Fig. 1；
Fig. 3 is the current direction schematic diagram of the present invention a kind of AMOLED image element driving method step one；
Fig. 4 is the current direction schematic diagram of the present invention a kind of AMOLED image element driving method step 2；
Fig. 5 is the current direction schematic diagram of the present invention a kind of AMOLED image element driving method step 3；
Fig. 6 is the current direction schematic diagram of the present invention a kind of AMOLED image element driving method step 4；
Fig. 7 is the current direction schematic diagram of the present invention a kind of AMOLED image element driving method step 5.
Detailed description of the invention
Below in conjunction with accompanying drawing, clearly describing technical scheme, accompanying drawing is only for reference and explanation uses, and does not constitute the restriction to scope of patent protection of the present invention.
The present invention provides a kind of AMOLED pixel-driving circuit, including interior pixels circuit and external compensation circuit, as it is shown in figure 1, interior pixels circuit concatenates external compensation circuit in periphery, viewing area by horizontal scanning line, dotted line lower left is external compensation circuit, uses 4T1C circuit structure；Dotted line upper right side is interior pixels circuit, uses 2T1C circuit structure；
Described interior pixels circuit is provided with at least one sub-pixel circuits, shows two sub-pixel circuits in Fig. 1, it is also possible to arrange multiple sub-pixel circuits, and described sub-pixel circuits is provided with the first driving thin film transistor (TFT) (T1-1、T1-2……T1-N, second switch thin film transistor (TFT) T2-1、T2-2……T2-N, internal capacitance C1-1、C1-2……C1-N, Organic Light Emitting Diode OLED；First drives thin film transistor (TFT) T1-1、T1-2……T1-NGrid connect internal node G1、G2……GN, its drain electrode concatenation Organic Light Emitting Diode OLED supply voltage VDD, its source electrode connects external compensation circuit；Second switch thin film transistor (TFT) T2-1、T2-2……T2-NGrid connect scan signal line, its source electrode connect data signal line Data line, its drain electrode connect described internal node G1、G2……GN；Internal capacitance C1-1、C1-2……C1-NOne end connect described internal node G1、G2……GN, the other end connects external compensation circuit；
Described external compensation circuit is provided with the 3rd switching thin-film transistor T3, the 4th switching thin-film transistor T4, the 5th switching thin-film transistor T5, the 6th switching thin-film transistor T6, external capacitive C2；4th switching thin-film transistor T4Grid connect first front scan signal line Scan1 (n-1), its source electrode is connected external capacitive C respectively with draining2Two ends, described external capacitive C2Two ends connect the first external node A and the second external node B respectively；Described first external node A is also connected with described internal capacitance C1-1、C1-2……C1-NThe other end；5th switching thin-film transistor T5Grid connect the first scan signal line Scan1 (n), its source ground Vss, its drain electrode connect described first external node A；3rd switching thin-film transistor T3Grid connect the second scan signal line Scan2 (n), its source electrode connect described second external node B, its drain electrode connect described first drive thin film transistor (TFT) T1-1、T1-2……T1-NSource electrode；6th switching thin-film transistor T6Grid connect the 3rd scan signal line Scan3 (n), its source ground Vss, its drain electrode connect described second external node B；3rd scan signal line (Scan3 (n)) connects described second switch thin film transistor (TFT) (T2-1、T2-2……T2-N) grid.
In the AMOLED pixel-driving circuit of the present embodiment, Organic Light Emitting Diode OLED is positioned at the first driving thin film transistor (TFT) T1-1、T1-2……T1-NDrain electrode end, then the change (change as caused due to material degradation etc.) of Organic Light Emitting Diode OLED self cross-pressure will not cause the potential change of source terminal, also would not impact flowing through its electric current IOLED.
The AMOLED pixel-driving circuit of the present invention utilizes external compensation circuit storage to drive the threshold voltage of thin film transistor (TFT), single or sub-pixel internal compensation is converted into external compensation mode, reduces backboard manufacture difficulty, it is to avoid threshold voltage Vth-drivingTFTInhomogeneities and unstability to Organic Light Emitting Diode electric current IOLEDImpact.
In the present embodiment, described first thin film transistor (TFT) T is driven1-1、T1-2……T1-N, the 3rd switching thin-film transistor T3, the 4th switching thin-film transistor T4, the 5th switching thin-film transistor T5, the 6th switching thin-film transistor T6For low-temperature polysilicon film transistor LTPS TFT, preparing for the ease of low-temperature polysilicon film transistor, reduce MASK quantity, reduce cost, in this circuit, low-temperature polysilicon film transistor is P-type TFT；Described second switch thin film transistor (TFT) T2-1、T2-2……T2-NBeing oxide thin film transistor, described oxide thin film transistor is N-type oxide thin film transistor.
Wherein, the leakage current of oxide thin film transistor Oxide TFT is extremely low so that storage electric capacity is in a frame time of display, and the electricity of oxidized thing thin film transistor (TFT) Oxide TFT loss is few, it is only necessary to the least capacitance can meet the demand of normal display.
Thin film transistor (TFT) in external compensation circuit all uses low-temperature polysilicon film transistor LTPS TFT, reduces power consumption, reduces border width.
In the present embodiment, low-temperature polysilicon film transistor LTPS TFT and oxide thin film transistor Oxide TFT is used in combination, and reduces AMOLED power consumption, increases AMOLED resolution.Wherein, Oxide TFT, as switching tube, reduces storage capacity area and leakage current；LTPS TFT is as driving pipe, it is provided that stable current drive characteristics.
In the present embodiment, all P-type TFT of low-temperature polysilicon film transistor LTPS TFT, decrease MASK usage quantity, reduce backboard cost of manufacture.
The present invention also provides for a kind of AMOLED image element driving method, comprises the steps:
S1. thin film transistor (TFT) T is driven by first1-1、T1-2……T1-N, second switch thin film transistor (TFT) T2-1、T2-2……T2-N, internal capacitance C1-1、C1-2……C1-N, Organic Light Emitting Diode OLED, the 3rd switching thin-film transistor T3, the 4th switching thin-film transistor T4, the 5th switching thin-film transistor T5, the 6th switching thin-film transistor T6, external capacitive C2, and first connect into described AMOLED pixel-driving circuit at front scan signal line Scan1 (n-1), the first scan signal line Scan1 (n), the second scan signal line Scan2 (n), the 3rd scan signal line Scan3 (n), data signal line Data line；
S2. external capacitive C2Reset phase:
As shown in Figure 3, first provides low level at front scan signal line Scan1 (n-1), the 3rd scan signal line Scan3 (n), first scan signal line Scan1 (n), the second scan signal line Scan2 (n), data signal line Data line provide high level, and first drives thin film transistor (TFT) T1-1、T1-2……T1-N, the 4th switching thin-film transistor T4, the 6th switching thin-film transistor T6Conducting, second switch thin film transistor (TFT) T2-1、T2-2……T2-N, the 3rd switching thin-film transistor T3, the 5th switching thin-film transistor T5Cut-off, by external capacitive C2Reset；Will not be compensated every time can develop with equal state by a upper picture voltage influence when making circuit compensate, using (n-1)th article of scan line as controlling the 4th switching thin-film transistor T in nth bar scan line4Holding wire, make the action of replacement complete before each scanning-line signal arrives.
S3. external capacitive C2Store the first driving thin film transistor (TFT) T1-1、T1-2……T1-NThreshold voltage Vth-driving TFTStage: as shown in Figure 4, first provides high level at front scan signal line Scan1 (n-1), the 3rd scan signal line Scan3 (n), first scan signal line Scan1 (n), the second scan signal line Scan2 (n), data signal line Data line provide low level, and wherein data signal line Data line input makes interior pixels circuit produce the fixed voltage V of electric currentlow, first drives thin film transistor (TFT) T1aWith T1b, second switch thin film transistor (TFT) T2aWith T2b, the 3rd switching thin-film transistor T3, the 5th switching thin-film transistor T5Conducting, the 4th switching thin-film transistor T4, the 6th switching thin-film transistor T6Ending, produced by interior pixels circuit, electric current flows into external capacitive C2, to described external capacitive C2Charging, when external capacitive C2Constantly charging, B point current potential constantly rises, until B point current potential is Vlow-Vth-driving TFT, pixel internal circuit no current produces, and stops external capacitive C2Charging.Now, the voltage V stored by external capacitive C2BAFor Vlow-Vth-driving TFT；
S4. internal capacitance C1-1、C1-2 ……C1-NThe gray scale voltage stage of storage data signal line input:
As shown in Figure 5, first provides high level at front scan signal line Scan1 (n-1), the second scan signal line Scan2 (n), the 3rd scan signal line Scan3 (n), first scan signal line Scan1 (n), data signal line Data line provide low level, and data signal line Data line inputs gray scale voltage Vdata, first drives thin film transistor (TFT) T1-1、T1-2 ……T1-N, second switch thin film transistor (TFT) T2-1、T2-2……T2-N, the 5th switching thin-film transistor T5Conducting, the 3rd switching thin-film transistor T3, the 4th switching thin-film transistor T4, the 6th switching thin-film transistor T6Cut-off, due to T3Disconnect, so not having electric current by OLED, internal capacitance C1-1, C1-2 ... the voltage V that C1-N storesGA=Vdata；
S5. internal capacitance C1-1、C1-2……C1-NWith external capacitive C2The concatenation stage:
As shown in Figure 6, in order to make internal capacitance C1With external capacitive C2Do correct concatenation, reach to compensate threshold voltage effect, and avoid when switch switching, circuit operation being adversely affected, first provides high level at front scan signal line Scan1 (n-1), the first scan signal line Scan1 (n), the second scan signal line Scan2 (n), data signal line Data line, 3rd scan signal line Scan3 (n) provides low level, and first drives thin film transistor (TFT) T1-1、T1-2……T1-N, the 6th switching thin-film transistor T6Conducting, second switch thin film transistor (TFT) T2-1、T2-2……T2-N, the 3rd switching thin-film transistor T3, the 4th switching thin-film transistor T4, the 5th switching thin-film transistor T5Cut-off, due to the 3rd switching thin-film transistor T3Disconnecting, this stage Organic Light Emitting Diode OLED does not have electric current to be passed through, internal capacitance C1-1、C1-2……C1-NWith external capacitive C2Concatenation voltage VGB=(VGA+VAB)=(Vdata–Vlow+Vth-drivingTFT)；
S6. Organic Light Emitting Diode OLED glow phase:
As shown in Figure 7, first provides high level at front scan signal line Scan1 (n-1), the first scan signal line Scan1 (n), data signal line Data line, second scan signal line Scan2 (n), the 3rd scan signal line Scan3 (n) provide low level, and first drives thin film transistor (TFT) T1-1、T1-2……T1-N, the 3rd switching thin-film transistor T3, the 6th switching thin-film transistor T6Conducting, second switch thin film transistor (TFT) T2-1、T2-2……T2-N, the 4th switching thin-film transistor T4, the 5th switching thin-film transistor T5Cut-off, first drives thin film transistor (TFT) T1-1、T1-2……T1-N, the 3rd switching thin-film transistor T3, the 6th switching thin-film transistor T6Conducting, other thin film transistor (TFT)s end, and now circuit operation is similar to the operator scheme of 2T1C structure, internal capacitance C1-1、C1-2……C1-NWith external capacitive C2Concatenation, first drives thin film transistor (TFT) T1-1、T1-2……T1-NBeing operated in saturation region, first drives thin film transistor (TFT) T1-1、T1-2……T1-NThe computing formula of electric current is:
IOLED=(1/2) * μ * Cox* (W/L) * (VGS-Vth-drivingTFT)2
=(1/2) * μ * Cox* (W/L) * (VG-VS-Vth-drivingTFT)2
=(1/2) * μ * Cox* (W/L) * (VGB-VS-Vth-drivingTFT)2
=(1/2) * μ * Cox* (W/L) * (Vdata–Vlow+Vth-drivingTFT-Vth-drivingTFT)2
=(1/2) * μ * Cox* (W/L) * (Vdata-Vlow)2。
From the first driving thin film transistor (TFT) T of above-described embodiment1-1、T1-2……T1-NIt will be seen that flow through AMOLED electric current and V in Current calculation formuladata、VlowRelevant, and threshold voltage Vth-driving TFTUnrelated, compensate for threshold voltage Vth-driving TFTOn the impact driving electric current, it addition, AMOLED and first drives transistor drain to connect, make AMOLED will not cause the first drive transistor source electrode potential change due to self cross-pressure change that material degradation etc. causes, i.e. will not be to electric current IOLEDImpact；The leakage current of oxide thin film transistor is extremely low, make storage electric capacity in a frame time of display, on oxide thin film transistor, the electricity of loss is few, having only to the least capacitance and can meet the demand of normal display, the present invention uses oxide thin film transistor as switching thin-film transistor, considerably reduces the leakage current through switching tube, thus reduce storage capacity area, reduce power consumption, reduce single sub-pixel area simultaneously, improve the resolution of AMOLED further；External compensation circuit is set at peripheral each the scan line in viewing area, solve the AMOLED luminosity problem of non-uniform caused because of the threshold voltage inhomogeneities of low-temperature polysilicon film transistor, also considerably reduce the thin film transistor (TFT) quantity within single sub-pixel and electric capacity quantity, making single sub-pixel circuits is simplest 2T1C structure, improves the resolution of AMOLED.
If above-described embodiment is the present invention preferably embodiment; but embodiments of the present invention are also not restricted to the described embodiments; the change made under other any spirit without departing from the present invention and principle, modify, substitute, combine, simplify; all should be the substitute mode of equivalence, within being included in protection scope of the present invention.
Claims (4)
1. an AMOLED pixel-driving circuit, it is characterised in that: include that interior pixels circuit is with outer
Portion compensates circuit；
Described interior pixels circuit is provided with at least one sub-pixel circuits, and described sub-pixel circuits is provided with the first driving
Thin film transistor (TFT) (T1-1、T1-2……T1-N), second switch thin film transistor (TFT) (T2-1、T2-2……T2-N), internal electricity
Hold (C1-1、C1-2……C1-N), Organic Light Emitting Diode (OLED)；First drives thin film transistor (TFT) (T1-1、T1-2……
T1-N) grid connect internal node (G1、G2……GN), its drain electrode concatenation Organic Light Emitting Diode (OLED) electricity
Source voltage (VDD), its source electrode connects external compensation circuit；Second switch thin film transistor (TFT) (T2-1、T2-2……T2-N)
Grid connect scan signal line, its source electrode connects data signal line (Data line), and its drain electrode connects described
Internal node (G1、G2……GN)；Internal capacitance (C1-1、C1-2……C1-N) one end connect described internal node (G1、
G2……GN), the other end connects external compensation circuit；
Described external compensation circuit is provided with the 3rd switching thin-film transistor (T3), the 4th switching thin-film transistor (T4)、
5th switching thin-film transistor (T5), the 6th switching thin-film transistor (T6), external capacitive (C2)；4th switch is thin
Film transistor (T4) grid connect first at front scan signal line (Scan1 (n-1)), its source electrode connects respectively with draining
Meet external capacitive (C2) two ends, described external capacitive (C2) two ends connect the first external node (A) and respectively
Two external nodes (B)；Described first external node (A) is also connected with described internal capacitance (C1-1、C1-2……C1-N)
The other end；5th switching thin-film transistor (T5) grid connect the first scan signal line (Scan1 (n)), its source electrode
Ground connection (Vss), its drain electrode connects described first external node (A)；3rd switching thin-film transistor (T3) grid
Connecting the second scan signal line (Scan2 (n)), its source electrode connects described second external node (B), its connection that drains
Described first drives thin film transistor (TFT) (T1-1、T1-2……T1-N) source electrode；6th switching thin-film transistor (T6)
Grid connects the 3rd scan signal line (Scan3 (n)), its source ground (Vss), and its drain electrode connects outside described second
Portion's node (B)；3rd scan signal line (Scan3 (n)) connects described second switch thin film transistor (TFT) (T2-1、T2-2……
T2-N) grid.
2. a kind of AMOLED pixel-driving circuit as claimed in claim 1, it is characterised in that: described
First drives thin film transistor (TFT) (T1-1、T1-2……T1-N), the 3rd switching thin-film transistor (T3), the 4th switch film
Transistor (T4), the 5th switching thin-film transistor (T5), the 6th switching thin-film transistor (T6) it is that low temperature polycrystalline silicon is thin
Film transistor, described low-temperature polysilicon film transistor is P-type TFT；Described second switch is thin
Film transistor (T2-1、T2-2……T2-N) it being oxide thin film transistor, described oxide thin film transistor is
N-type oxide thin film transistor.
3. an AMOLED image element driving method, it is characterised in that comprise the steps:
S1. thin film transistor (TFT) (T is driven by first1-1、T1-2……T1-N), second switch thin film transistor (TFT) (T2-1、
T2-2……T2-N), internal capacitance (C1-1、C1-2……C1-N), Organic Light Emitting Diode (OLED), the 3rd switch thin
Film transistor (T3), the 4th switching thin-film transistor (T4), the 5th switching thin-film transistor (T5), the 6th switch thin
Film transistor (T6), external capacitive (C2) and first front scan signal line (Scan1 (n-1)), first scanning
Holding wire (Scan1 (n)), the second scan signal line (Scan2 (n)), the 3rd scan signal line (Scan3 (n)), data
Holding wire (Data line) connects into described AMOLED pixel-driving circuit；
S2. external capacitive (C2) reset phase:
First drives thin film transistor (TFT) (T1-1、T1-2……T1-N), the 4th switching thin-film transistor (T4), the 6th open
Close thin film transistor (TFT) (T6) conducting, other thin film transistor (TFT)s end, by external capacitive (C2) reset；
S3. external capacitive (C2) store the first driving thin film transistor (TFT) (T1-1、T1-2……T1-N) threshold voltage
Vth-driving TFTStage:
Data signal line (Data line) input makes interior pixels circuit produce the fixed voltage (V of electric currentlow),
First drives thin film transistor (TFT) (T1-1、T1-2……T1-N), second switch thin film transistor (TFT) (T2-1、T2-2……T2-N)、
3rd switching thin-film transistor (T3), the 5th switching thin-film transistor (T5) conducting, other thin film transistor (TFT)s end,
Electric current produced by interior pixels circuit flows into external capacitive (C2), to described external capacitive (C2) charge to
Its voltage V storedBAFor (Vlow-Vth-driving TFT)；
S4. internal capacitance (C1-1、C1-2……C1-N) store data signal line input the gray scale voltage stage:
Data signal line (Data line) input gray scale voltage Vdata, first drives thin film transistor (TFT) (T1-1、
T1-2……T1-N), second switch thin film transistor (TFT) (T2-1、T2-2……T2-N), the 5th switching thin-film transistor (T5)
Conducting, other thin film transistor (TFT)s end, internal capacitance (C1-1、C1-2……C1-N) the voltage V that storesGA=Vdata；
S5. internal capacitance (C1-1、C1-2……C1-N) and external capacitive (C2) the concatenation stage:
First drives thin film transistor (TFT) (T1-1、T1-2……T1-N), the 6th switching thin-film transistor (T6) conducting, other
Thin film transistor (TFT) ends, internal capacitance (C1-1、C1-2……C1-N) and external capacitive (C2) concatenation voltage VGB=
(VGA+VAB)=(Vdata–Vlow+Vth-driving TFT)；
S6. Organic Light Emitting Diode (OLED) glow phase:
First drives thin film transistor (TFT) (T1-1、T1-2……T1-N), the 3rd switching thin-film transistor (T3), the 6th open
Close thin film transistor (TFT) (T6) conducting, other thin film transistor (TFT)s end, internal capacitance (C1-1、C1-2……C1-N) with outer
Portion electric capacity (C2) concatenation, first drives thin film transistor (TFT) (T1-1、T1-2……T1-N) it is operated in saturation region, the
One drives thin film transistor (TFT) (T1-1、T1-2……T1-N) electric current IOLED=(1/2) * μ * Cox* (W/L) * (Vdata-
Vlow)2。
4. AMOLED image element driving method as claimed in claim 3, it is characterised in that
In S1, first carries at front scan signal line (Scan1 (n-1)), the 3rd scan signal line (Scan3 (n))
For low level, other holding wires provide high level；
In S2, the first scan signal line (Scan1 (n)), the second scan signal line (Scan2 (n)), data are believed
Number line (Data line) provides low level, and other holding wires provide high level；
In S3, the first scan signal line (Scan1 (n)), data signal line (Data line) provide low level,
Other holding wires provide high level；
In S4, the 3rd scan signal line (Scan3 (n)) provides low level, and other holding wires provide high level；
In S5, the second scan signal line (Scan2 (n)), the 3rd scan signal line (Scan3 (n)) provide low electricity
Flat, other holding wires provide high level.
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