CN105789742A - Coplanar waveguide wide-stop-band filter - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
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- H01P1/203—Strip line filters
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- H—ELECTRICITY
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/086—Coplanar waveguide resonators
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- H—ELECTRICITY
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract
本发明公开的一种共面波导宽阻带滤波器,由共面波导λg/4型的SIR短路支节单元结构与共面波导的缺陷结构嵌套而成。该结构是一种共面波导SIR与共面波导DGS的嵌套结构,可以产生多个邻近的谐振零点,因为该结构本质上还是一种SIR结构,具有SIR结构的优点,所以同样可以通过改变SIR结构传输线的特性阻抗之比来实现频率的变化,它十分适合于设计小型化宽阻带滤波器。本发明解决了当前设计宽阻带滤波器时,性能与体积之间存在的矛盾,其插损较小,频率选择性更好,而且体积较小,满足了滤波性能的同时也减小了体积。
The invention discloses a coplanar waveguide wide stopband filter, which is formed by nesting a coplanar waveguide λg/4 type SIR short-circuit branch unit structure and a coplanar waveguide defect structure. This structure is a nested structure of coplanar waveguide SIR and coplanar waveguide DGS, which can generate multiple adjacent resonance zeros, because this structure is essentially a SIR structure, which has the advantages of the SIR structure, so it can also be changed by changing the SIR The ratio of the characteristic impedance of the structural transmission line is used to realize the frequency change, which is very suitable for designing a miniaturized wide stopband filter. The present invention solves the contradiction between the performance and the volume when designing the wide stop band filter currently, the insertion loss is small, the frequency selectivity is better, and the volume is small, which satisfies the filtering performance and reduces the volume at the same time .
Description
技术领域technical field
本发明涉及通信设备技术领域,具体涉及一种共面波导宽阻带滤波器。The invention relates to the technical field of communication equipment, in particular to a coplanar waveguide wide stopband filter.
背景技术Background technique
共面波导(CPW)结构在1969年由C.P.Wen提出来以后,用共面波导结构来实现微波滤波器也应运而生。共面波导是一种导体带与地平面同处于同一个平面上的结构,如图2所示,该结构包括有介质基片,敷设在介质基片上表面中间位置处的共面波导信号线,在共面波导信号线两侧敷设了共面波导地共面波导地。该结构便于并联外接元件,易于构成混合集成电路,由于其具有与有源器件、无源器件连接十分方便等诸多优点,以及微波和毫米波集成电路特别是单片集成电路技术的飞速发展,近些年来,共面波导结构受到了越来越多学者的关注,利用该结构设计微波滤波器也变得更加广泛。After the coplanar waveguide (CPW) structure was proposed by C.P.Wen in 1969, the use of the coplanar waveguide structure to realize microwave filters also came into being. The coplanar waveguide is a structure in which the conductor strip and the ground plane are on the same plane. As shown in Figure 2, the structure includes a dielectric substrate and a coplanar waveguide signal line laid in the middle of the upper surface of the dielectric substrate. The coplanar waveguide ground is laid on both sides of the coplanar waveguide signal line. This structure is convenient for connecting external components in parallel, and it is easy to form a hybrid integrated circuit. Due to its many advantages such as very convenient connection with active devices and passive devices, and the rapid development of microwave and millimeter wave integrated circuits, especially monolithic integrated circuits, recent In recent years, the coplanar waveguide structure has attracted more and more scholars' attention, and the use of this structure to design microwave filters has become more widespread.
随着微波技术的发展,微波滤波器的设计已经比较成熟,如今人们在满足滤波器的通带性能要求时,已经更加注重宽阻带的实现。With the development of microwave technology, the design of microwave filters has become relatively mature. Nowadays, people have paid more attention to the realization of wide stopband when meeting the passband performance requirements of filters.
目前,共面波导宽阻带滤波器通常采用如下两种结构之一:At present, the coplanar waveguide wide stopband filter usually adopts one of the following two structures:
一、采用阶跃阻抗谐振器(SIR)以及SIR的变形结构,如图3所示,该结构包括有图1所示的λg/4型的SIR单元结构和图2所示的共面波导结构,SIR结构一端与共面波导地相连接形成短路,另一端开路;1. Using a stepped impedance resonator (SIR) and a deformed structure of the SIR, as shown in Figure 3, the structure includes the λg/4-type SIR unit structure shown in Figure 1 and the coplanar waveguide structure shown in Figure 2 , one end of the SIR structure is connected to the coplanar waveguide ground to form a short circuit, and the other end is open circuit;
二、缺陷地结构(DGS),如图4所示,该结构包括有图2的共面波导结构,在共面波导地上形成了两个对称的开口比较小的矩形缺陷地;2. Defective ground structure (DGS), as shown in Figure 4, the structure includes the coplanar waveguide structure shown in Figure 2, and two symmetrical rectangular defect grounds with relatively small openings are formed on the coplanar waveguide ground;
由于目前很多设计者都只是单一的利用DGS结构或SIR结构进行级联,级联个数为4、5个左右,一般级联次数越多,带来的插损会越大,故虽然获得了不错的宽阻带性能,但同时也带来了带通部分插损的增大以及器件体积的增大的缺点。At present, many designers only use DGS structure or SIR structure for cascading, and the number of cascading is about 4 or 5. Generally, the more cascading times, the greater the insertion loss will be. Therefore, although the obtained Good wide stopband performance, but at the same time it also brings the disadvantages of increased insertion loss in the bandpass part and increased device volume.
发明内容Contents of the invention
本发明实施例的目的在于提供一种共面波导宽阻带滤波器,解决了现有技术中存在的带通部分插损大、滤波器体积大的问题。The purpose of the embodiments of the present invention is to provide a coplanar waveguide wide stopband filter, which solves the problems of large insertion loss in the bandpass part and large filter volume in the prior art.
为达到上述目的,本发明实施例公开了:In order to achieve the above object, the embodiment of the present invention discloses:
一种共面波导宽阻带滤波器,包括共面波导λg/4型的SIR短路支节单元结构,及嵌套在共面波导λg/4型的SIR短路支节单元结构中的至少一层共面波导的缺陷结构,A coplanar waveguide wide stop band filter, comprising a coplanar waveguide λg/4 type SIR short-circuit stub unit structure, and at least one layer nested in the coplanar waveguide λg/4 type SIR short-circuit stub unit structure The defect structure of the coplanar waveguide,
所述的共面波导λg/4型的SIR短路支节单元结构,包括共面波导结构及嵌套在共面波导结构中的λg/4型的SIR单元结构,The coplanar waveguide λg/4-type SIR short-circuit branch unit structure includes a coplanar waveguide structure and a λg/4-type SIR unit structure nested in the coplanar waveguide structure,
所述的共面波导结构,包括介质基片,在介质基片上表面中间位置处敷设有共面波导信号线,在共面波导信号线两侧敷设有共面波导地,所述的共面波导信号线和共面波导地之间留有间隙,The coplanar waveguide structure includes a dielectric substrate, a coplanar waveguide signal line is laid at the middle position on the upper surface of the dielectric substrate, and a coplanar waveguide ground is laid on both sides of the coplanar waveguide signal line. The coplanar waveguide There is a gap between the signal line and the coplanar waveguide ground,
所述的λg/4型的SIR单元结构,包括相连接的一根较粗的传输线和一根较细的传输线,所述的共面波导结构和λg/4型的SIR单元结构在嵌套成共面波导λg/4型的SIR短路支节单元结构时,所述的较细的传输线一端与所述的共面波导地连接形成短路,所述的较粗的传输线一端与共面波导地、共面波导信号线都不连接,形成开路,The λg/4-type SIR unit structure includes a thicker transmission line and a thinner transmission line connected to each other, and the coplanar waveguide structure and the λg/4-type SIR unit structure are nested into When the coplanar waveguide λg/4 type SIR short-circuit branch unit structure, one end of the thinner transmission line is connected to the coplanar waveguide ground to form a short circuit, and one end of the thicker transmission line is connected to the coplanar waveguide ground, common The surface waveguide signal lines are not connected, forming an open circuit,
所述的共面波导的缺陷结构,包括所述的共面波导结构,在所述的共面波导地上分别开有矩形的缺陷地,缺陷地朝向共面波导信号线一侧,通过一开口与共面波导信号线和共面波导地之间的间隙相连通,The defect structure of the coplanar waveguide includes the coplanar waveguide structure, and rectangular defect grounds are respectively opened on the coplanar waveguide ground, and the defect ground faces the side of the coplanar waveguide signal line, and communicates with the common plane through an opening. The gap between the planar waveguide signal line and the coplanar waveguide ground is connected,
所述的共面波导λg/4型的SIR短路支节单元结构和共面波导的缺陷结构在嵌套成共面波导宽阻带滤波器时,所述的共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中。When the coplanar waveguide λg/4 type SIR short-circuit branch unit structure and the coplanar waveguide defect structure are nested into a coplanar waveguide wide stopband filter, the defect ground of the coplanar waveguide defect structure Partially nested in the thicker transmission line in the SIR short-circuit stub unit structure of the coplanar waveguide λg/4 type.
优选的,所述的共面波导λg/4型的SIR短路支节单元结构中嵌套有一层共面波导的缺陷结构,所述的共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中,共面波导的缺陷结构的缺陷地部分的开口朝向所述的共面波导信号线一侧。Preferably, the coplanar waveguide λg/4 type SIR short-circuit branch unit structure is nested with a layer of coplanar waveguide defect structure, and the defect ground of the coplanar waveguide defect structure is partially nested in the coplanar waveguide In the thicker transmission line in the waveguide λg/4-type SIR short-circuit stub unit structure, the opening of the defective ground portion of the defect structure of the coplanar waveguide faces to the side of the coplanar waveguide signal line.
优选的,所述的共面波导的缺陷结构的缺陷地部分为一矩形环。Preferably, the defective part of the defective structure of the coplanar waveguide is a rectangular ring.
优选的,所述的共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,所述的第一层共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中,第一层共面波导的缺陷结构的缺陷地部分的开口朝向所述的共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧,第一层共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的共面波导地不完全镂空,所述的第二层共面波导的缺陷结构的缺陷地部分嵌套在第一层共面波导的缺陷结构的缺陷地部分内的共面波导地中,第二层共面波导的缺陷结构的缺陷地部分的开口朝向所述的共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧。Preferably, the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type is embedded with defect structures of two layers of coplanar waveguides, and the defects of the defect structures of the first layer of coplanar waveguides are partially embedded Set in the thicker transmission line in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, the opening of the defective ground part of the defect structure of the first layer of coplanar waveguide faces the coplanar waveguide λg/4 type The SIR short-circuit branch unit structure is on the side of the coplanar waveguide signal line, and the defective part of the defect structure of the first layer of coplanar waveguide is a rectangular ring, and the coplanar waveguide in the rectangular ring is not completely hollowed out. The second layer The defective ground portion of the defect structure of the coplanar waveguide is nested in the coplanar waveguide ground within the defective ground portion of the defect structure of the first layer of coplanar waveguide, and the opening of the defective ground portion of the defect structure of the second layer of coplanar waveguide faces The coplanar waveguide λg/4 type SIR short-circuit branch unit structure is one side of the coplanar waveguide signal line.
优选的,所述的共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,所述的第一层共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中,第一层共面波导的缺陷结构的缺陷地部分的开口朝向所述的共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧,第一层共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的共面波导地不完全镂空,所述的第二层共面波导的缺陷结构的缺陷地部分嵌套在第一层共面波导的缺陷结构的缺陷地部分内的共面波导地中,第二层共面波导的缺陷结构的缺陷地部分的开口朝向所述的共面波导λg/4型的SIR短路支节单元结构中和共面波导信号线相对平行的一侧。Preferably, the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type is embedded with defect structures of two layers of coplanar waveguides, and the defects of the defect structures of the first layer of coplanar waveguides are partially embedded Set in the thicker transmission line in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, the opening of the defective ground part of the defect structure of the first layer of coplanar waveguide faces the coplanar waveguide λg/4 type The SIR short-circuit branch unit structure is on the side of the coplanar waveguide signal line, and the defective part of the defect structure of the first layer of coplanar waveguide is a rectangular ring, and the coplanar waveguide in the rectangular ring is not completely hollowed out. The second layer The defective ground portion of the defect structure of the coplanar waveguide is nested in the coplanar waveguide ground within the defective ground portion of the defect structure of the first layer of coplanar waveguide, and the opening of the defective ground portion of the defect structure of the second layer of coplanar waveguide faces The side relatively parallel to the signal line of the coplanar waveguide in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type.
优选的,所述的共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,所述的第一层共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中,第一层共面波导的缺陷结构的缺陷地部分的开口朝向所述的共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧,第一层共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的共面波导地不完全镂空,所述的第二层共面波导的缺陷结构的缺陷地部分嵌套在第一层共面波导的缺陷结构的缺陷地部分内的共面波导地中,第二层共面波导的缺陷结构的缺陷地部分的开口朝向所述的共面波导λg/4型的SIR短路支节单元结构中和共面波导信号线相垂直的一侧。Preferably, the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type is embedded with defect structures of two layers of coplanar waveguides, and the defects of the defect structures of the first layer of coplanar waveguides are partially embedded Set in the thicker transmission line in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, the opening of the defective ground part of the defect structure of the first layer of coplanar waveguide faces the coplanar waveguide λg/4 type The SIR short-circuit branch unit structure is on the side of the coplanar waveguide signal line, and the defective part of the defect structure of the first layer of coplanar waveguide is a rectangular ring, and the coplanar waveguide in the rectangular ring is not completely hollowed out. The second layer The defective ground portion of the defect structure of the coplanar waveguide is nested in the coplanar waveguide ground within the defective ground portion of the defect structure of the first layer of coplanar waveguide, and the opening of the defective ground portion of the defect structure of the second layer of coplanar waveguide faces The side perpendicular to the signal line of the coplanar waveguide in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type.
优选的,所述的第二层共面波导的缺陷结构的缺陷地部分为一矩形环。Preferably, the defective part of the defective structure of the second-layer coplanar waveguide is a rectangular ring.
由上述的技术方案可见,本发明实施例通过将共面波导λg/4型的SIR短路支节单元结构与共面波导的缺陷结构嵌套得到小型化的共面波导宽阻带滤波器,解决了当前设计宽阻带滤波器时,性能与体积之间存在的矛盾,由于本发明没有通过利用DGS或SIR结构进行简单的多级级联来获得多个谐振点,而是设计了一种嵌套结构来实现的,故其插损较小,而且体积较小,满足了滤波性能的同时也减小了体积。It can be seen from the above technical solution that the embodiment of the present invention solves the problem by nesting the coplanar waveguide λg/4-type SIR short-circuit branch unit structure with the coplanar waveguide defect structure to obtain a miniaturized coplanar waveguide wide stopband filter. When designing a wide stopband filter, there is a contradiction between performance and volume, because the present invention does not obtain multiple resonance points by using DGS or SIR structure to perform simple multi-stage cascading, but designs a nested structure, so its insertion loss is small, and its volume is small, which satisfies the filtering performance and reduces the volume.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1是λg/4型的SIR单元结构的结构示意图;Fig. 1 is the structural representation of the SIR unit structure of λg/4 type;
图2是共面波导结构示意图;Fig. 2 is a schematic diagram of a coplanar waveguide structure;
图3是共面波导λg/4型的SIR短路支节单元结构示意图;Fig. 3 is a schematic diagram of the structure of the SIR short-circuit branch unit of the coplanar waveguide λg/4 type;
图4是共面波导的缺陷结构第一种实施例的结构示意图;Fig. 4 is a structural schematic diagram of the first embodiment of the defect structure of the coplanar waveguide;
图5是共面波导的缺陷结构第二种实施例的结构示意图;Fig. 5 is a structural schematic diagram of a second embodiment of a defect structure of a coplanar waveguide;
图6是本发明共面波导宽阻带滤波器的第一种实施例的结构示意图;Fig. 6 is the structural representation of the first embodiment of the coplanar waveguide wide stopband filter of the present invention;
图7是本发明共面波导宽阻带滤波器的第二种实施例的结构示意图;Fig. 7 is the structural representation of the second embodiment of the coplanar waveguide wide stopband filter of the present invention;
图8是本发明共面波导宽阻带滤波器的第三种实施例的结构示意图;Fig. 8 is a structural schematic diagram of a third embodiment of the coplanar waveguide wide stopband filter of the present invention;
图9是本发明共面波导宽阻带滤波器的第四种实施例的结构示意图;Fig. 9 is a schematic structural view of a fourth embodiment of the coplanar waveguide wide stopband filter of the present invention;
图10是本发明共面波导宽阻带滤波器的第五种实施例的结构示意图;Fig. 10 is a schematic structural view of a fifth embodiment of the coplanar waveguide wide stopband filter of the present invention;
图11是本发明共面波导宽阻带滤波器的第六种实施例的结构示意图;Fig. 11 is a schematic structural view of the sixth embodiment of the coplanar waveguide wide stopband filter of the present invention;
图12是本发明共面波导宽阻带滤波器的第七种实施例的结构示意图;Fig. 12 is a structural schematic diagram of the seventh embodiment of the coplanar waveguide wide stopband filter of the present invention;
图13是本发明共面波导宽阻带滤波器的第八种实施例的结构示意图;Fig. 13 is a structural schematic diagram of the eighth embodiment of the coplanar waveguide wide stopband filter of the present invention;
图14是本发明共面波导宽阻带滤波器的第九种实施例的结构示意图;Fig. 14 is a structural schematic diagram of the ninth embodiment of the coplanar waveguide wide stopband filter of the present invention;
图15是本发明共面波导宽阻带滤波器的第十种实施例的结构示意图;Fig. 15 is a schematic structural diagram of the tenth embodiment of the coplanar waveguide wide stopband filter of the present invention;
图16是共面波导SIR结构的S21参数示意图;Fig. 16 is a schematic diagram of S21 parameters of the coplanar waveguide SIR structure;
图17是共面波导缺陷地结构的S21参数示意图;Fig. 17 is a schematic diagram of S21 parameters of a coplanar waveguide defect ground structure;
图18是共面波导SIR与缺陷地嵌套结构的S21参数示意图。Fig. 18 is a schematic diagram of S21 parameters of coplanar waveguide SIR and defect ground nesting structure.
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
图1是λg/4型的SIR单元结构,该结构包括相连接的一根较粗的传输线和一根较细的传输线,粗传输线和细传输线的特性阻抗不同,通过改变它们之间的阻抗比RZ可以调整谐振器长度和相应的杂散谐振频率,它是一种能够产生横向电磁场或准横向电磁场模式的双谐振点的谐振器。Figure 1 is a λg/4-type SIR unit structure, which includes a thicker transmission line and a thinner transmission line connected to each other. The thicker transmission line and the thinner transmission line have different characteristic impedances. By changing the impedance ratio between them R Z can adjust the length of the resonator and the corresponding spurious resonant frequency, it is a kind of resonator that can generate double resonant point of transverse electromagnetic field or quasi transverse electromagnetic field mode.
图2是共面波导结构,包括介质基片,在介质基片上表面中间位置处敷设有共面波导信号线,在共面波导信号线两侧敷设有共面波导地,共面波导信号线和共面波导地之间留有间隙。Figure 2 is a coplanar waveguide structure, including a dielectric substrate, a coplanar waveguide signal line is laid at the middle position on the upper surface of the dielectric substrate, a coplanar waveguide ground is laid on both sides of the coplanar waveguide signal line, the coplanar waveguide signal line and A gap is left between the coplanar waveguide grounds.
图3是共面波导λg/4型的SIR短路支节单元结构,该结构包括共面波导结构及嵌套在共面波导结构中的λg/4型的SIR单元结构,λg/4型的SIR单元结构中较细的传输线一端与共面波导结构的共面波导地连接形成短路,较粗的传输线一端与共面波导地和共面波导信号线都不连接,形成开路。Figure 3 is the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, which includes the coplanar waveguide structure and the λg/4 type SIR unit structure nested in the coplanar waveguide structure, and the λg/4 type SIR One end of the thinner transmission line in the unit structure is connected to the coplanar waveguide ground of the coplanar waveguide structure to form a short circuit, and one end of the thicker transmission line is not connected to the coplanar waveguide ground or the coplanar waveguide signal line, forming an open circuit.
图4是共面波导的缺陷地结构的第一种实施例,该结构同样包括有图2的共面波导结构,在共面波导地上分别开有矩形的缺陷地,缺陷地朝向共面波导信号线一侧,通过一开口与共面波导信号线和共面波导地之间的间隙相连通。Fig. 4 is the first embodiment of the defective ground structure of the coplanar waveguide. This structure also includes the coplanar waveguide structure in Fig. 2. There are rectangular defective grounds respectively opened on the coplanar waveguide ground, and the defective ground faces the coplanar waveguide signal. One side of the line communicates with the gap between the coplanar waveguide signal line and the coplanar waveguide ground through an opening.
图5是共面波导的缺陷地结构的第二种实施例,与图4不同的是,缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空,作用是使得滤波器在更高频率有更大的等效电容和更小的等效电感,有助于在高频段增加滤波器的插损和减少滤波器的回损。Fig. 5 is the second embodiment of the defective ground structure of the coplanar waveguide. The difference from Fig. 4 is that the defective ground is partly a rectangular ring, and the metal sheet in the rectangular ring is not completely hollowed out in the coplanar waveguide, so that the filtering The filter has a larger equivalent capacitance and a smaller equivalent inductance at higher frequencies, which helps to increase the insertion loss of the filter and reduce the return loss of the filter at high frequencies.
图6是本发明共面波导宽阻带滤波器第一种实施例的结构,该结构是在图3的基础上将图4结构进行嵌套,共面波导λg/4型的SIR短路支节单元结构中嵌套有一层共面波导的缺陷结构,共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中,共面波导的缺陷结构的缺陷地部分的开口朝向共面波导的缺陷结构共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧。Fig. 6 is the structure of the first embodiment of the coplanar waveguide wide stopband filter of the present invention, the structure is based on Fig. 3 and the structure of Fig. 4 is nested, and the SIR short-circuit branch of the coplanar waveguide λg/4 type A defect structure of a coplanar waveguide is nested in the unit structure, and the defect ground of the defect structure of the coplanar waveguide is partially nested in the thicker transmission line in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, coplanar The opening of the defective ground part of the defective structure of the waveguide faces to the signal line side of the coplanar waveguide of the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type.
按照第一种实施例的结构,设置一层缺陷地,该种结构的滤波器的特点是,嵌套于SIR结构中的DGS结构产生的二次谐波距离一次谐波更远,因此二次谐波对滤波器阻带性能影响会更小。According to the structure of the first embodiment, a layer of defective ground is set. The characteristic of the filter of this structure is that the second harmonic generated by the DGS structure nested in the SIR structure is farther away from the first harmonic, so the second Harmonics will have less impact on filter stopband performance.
本发明第二种实施例的结构,如图7所示,也是在共面波导λg/4型的SIR短路支节单元结构中嵌套有一层共面波导的缺陷结构,其包含第一种实施例中的所有结构,此处不再赘述,除此之外,共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空。The structure of the second embodiment of the present invention, as shown in Figure 7, is also a defect structure of a layer of coplanar waveguide nested in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, which includes the first implementation All the structures in the example are not described here again. In addition, the defective part of the defect structure of the coplanar waveguide is a rectangular ring, and the metal sheet in the rectangular ring is not completely hollowed out.
按照第二种实施例的结构,设置一层缺陷地,缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空,该种结构的滤波器在更高频率有更大的等效电容和更小的等效电感,有助于在高频段增加滤波器的插损和减少滤波器的回损。According to the structure of the second embodiment, a layer of defective ground is set, and the defective ground part is a rectangular ring, and the coplanar waveguide ground of the metal sheet in the rectangular ring is not completely hollowed out. The filter with this structure has a larger The equivalent capacitance and smaller equivalent inductance help to increase the insertion loss of the filter and reduce the return loss of the filter in the high frequency band.
本发明第三种实施例的结构,如图8所示,共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,第一层共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中,第一层共面波导的缺陷结构的缺陷地部分的开口朝向共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧,第一层共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空,第二层共面波导的缺陷结构的缺陷地部分嵌套在第一层共面波导的缺陷结构的缺陷地部分内的共面波导地中,第二层共面波导的缺陷结构的缺陷地部分的开口朝向共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧。In the structure of the third embodiment of the present invention, as shown in Figure 8, the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type is nested with two layers of coplanar waveguide defect structures, and the first layer of coplanar waveguide The defect ground part of the defect structure is nested in the thicker transmission line in the SIR short-circuit stub unit structure of the coplanar waveguide λg/4 type, and the opening of the defect part of the defect structure of the first layer of coplanar waveguide faces the coplanar waveguide λg /4 type SIR short-circuit branch unit structure on the side of the coplanar waveguide signal line, the defective part of the defect structure of the first layer of coplanar waveguide is divided into a rectangular ring, and the metal sheet coplanar waveguide in the rectangular ring is not completely hollowed out. The defective ground portion of the defective structure of the second coplanar waveguide is nested in the coplanar waveguide ground within the defective ground portion of the defective structure of the first layer coplanar waveguide, and the defective ground portion of the defective structure of the second layer coplanar waveguide The opening of the coplanar waveguide λg/4 type SIR short-circuit branch unit structure faces the side of the coplanar waveguide signal line.
按照第三种实施例的结构,设置两层缺陷地,两层缺陷地开口相同,该种结构的滤波器的特点是,相较于设置一层缺陷地,产生的谐振点更多,那么对应的阻带带宽更宽。According to the structure of the third embodiment, two layers of defect grounds are provided, and the openings of the two layers of defect grounds are the same. The characteristic of the filter of this structure is that compared with setting one layer of defect grounds, more resonance points are generated, so the corresponding The stopband bandwidth is wider.
本发明第四种实施例的结构,如图9所示,也是在共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,其包含第三种实施例中的所有结构,此处不再赘述,除此之外,第二层共面波导的缺陷结构的共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空。The structure of the fourth embodiment of the present invention, as shown in Figure 9, is also a defect structure with two layers of coplanar waveguides nested in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, which includes the third All the structures in the embodiment will not be described in detail here. In addition, the defective structure of the coplanar waveguide in the second layer is a rectangular ring, and the metal sheets in the rectangular ring share the same The surface waveguide is not completely hollowed out.
按照第四种实施例的结构,设置两层缺陷地,两层缺陷地开口相同,且第二层缺陷地为一矩形环,矩形环内的金属片共面波导地不完全镂空,该种结构的滤波器相较于第三种实施例,在更高频率有更大的等效电容和更小的等效电感,有助于在高频段增加滤波器的插损和减少滤波器的回损。According to the structure of the fourth embodiment, two layers of defective ground are set, the openings of the two layers of defective ground are the same, and the second layer of defective ground is a rectangular ring, and the metal sheet coplanar waveguide in the rectangular ring is not completely hollowed out. This structure Compared with the third embodiment, the filter has larger equivalent capacitance and smaller equivalent inductance at higher frequencies, which helps to increase the insertion loss of the filter and reduce the return loss of the filter in the high frequency band .
本发明第五种实施例的结构,如图10所示,共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,第一层共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中,第一层共面波导的缺陷结构的缺陷地部分的开口朝向共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧,第一层共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空,第二层共面波导的缺陷结构的缺陷地部分嵌套在第一层共面波导的缺陷结构的缺陷地部分内的金属片共面波导地中,第二层共面波导的缺陷结构的缺陷地部分的开口朝向共面波导λg/4型的SIR短路支节单元结构中和共面波导信号线相对平行的一侧。The structure of the fifth embodiment of the present invention, as shown in Figure 10, has two layers of coplanar waveguide defect structures nested in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, and the first layer of coplanar waveguide The defect ground part of the defect structure is nested in the thicker transmission line in the SIR short-circuit stub unit structure of the coplanar waveguide λg/4 type, and the opening of the defect part of the defect structure of the first layer of coplanar waveguide faces the coplanar waveguide λg /4 type SIR short-circuit branch unit structure on the side of the coplanar waveguide signal line, the defective part of the defect structure of the first layer of coplanar waveguide is divided into a rectangular ring, and the metal sheet coplanar waveguide in the rectangular ring is not completely hollowed out. The defective ground of the defect structure of the second layer coplanar waveguide is partially nested in the metal sheet coplanar waveguide ground within the defective ground portion of the defect structure of the first layer coplanar waveguide, and the defect of the defect structure of the second layer coplanar waveguide The opening of the ground part faces the side relatively parallel to the signal line of the coplanar waveguide in the SIR short-circuit stub unit structure of the coplanar waveguide λg/4 type.
按照第五种实施例的结构,缺陷地内的金属片共面波导地又引入了一个小的缺陷,但开口与大的缺陷地的开口相反,相较于第三种实施例,两层缺陷地开口方向相同时,相当于并联关系,两层缺陷地开口方向不同时,相当于串联关系。并联的缺陷地可以引入更多的谐振点,使得滤波器有更大的阻带范围;串联的缺陷地具有更长的电长度,从而改变谐振频率点f4的值,使得f4具有更宽的可变化范围。According to the structure of the fifth embodiment, the metal sheet coplanar waveguide in the defect ground introduces a small defect, but the opening is opposite to the opening of the large defect ground. Compared with the third embodiment, the two-layer defect ground When the opening directions are the same, it is equivalent to a parallel relationship, and when the opening directions of the two layers of defects are different, it is equivalent to a series relationship. Parallel defective ground can introduce more resonance points, so that the filter has a larger stop band range; serial defective ground has a longer electrical length, thereby changing the value of the resonant frequency point f4 , making f4 have a wider variable range.
本发明第六种实施例的结构,如图11所示,也是在共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,两层缺陷地开口相反,其包含第五种实施例中的所有结构,此处不再赘述,除此之外,第二层缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空。The structure of the sixth embodiment of the present invention, as shown in Figure 11, is also a defect structure with two layers of coplanar waveguides nested in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, and the openings of the two layers of defects On the contrary, it includes all the structures in the fifth embodiment, which will not be repeated here. In addition, the defective part of the second layer is a rectangular ring, and the metal sheet coplanar waveguide in the rectangular ring is not completely hollowed out.
相较于第五种实施例,第六种实施例结构的滤波器在更高频率有更大的等效电容和更小的等效电感,有助于在高频段增加滤波器的插损和减少滤波器的回损。Compared with the fifth embodiment, the filter structure of the sixth embodiment has larger equivalent capacitance and smaller equivalent inductance at higher frequencies, which helps to increase the insertion loss and Reduce filter return loss.
本发明第七种、第八种实施例的结构,分别如图12、图13所示,共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,第一层共面波导的缺陷结构的缺陷地部分嵌套在共面波导λg/4型的SIR短路支节单元结构中较粗的传输线中,第一层共面波导的缺陷结构的缺陷地部分的开口朝向共面波导λg/4型的SIR短路支节单元结构中共面波导信号线一侧,第一层共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空,第二层共面波导的缺陷结构的缺陷地部分嵌套在第一层共面波导的缺陷结构的缺陷地部分内的金属片共面波导地中,第二层共面波导的缺陷结构的缺陷地部分的开口朝向共面波导λg/4型的SIR短路支节单元结构中和共面波导信号线相垂直的一侧。The structures of the seventh and eighth embodiments of the present invention are shown in Fig. 12 and Fig. 13 respectively. The SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type is nested with defect structures of two layers of coplanar waveguides. , the defect ground of the defect structure of the coplanar waveguide in the first layer is partially embedded in the thicker transmission line in the SIR short-circuit stub unit structure of the coplanar waveguide λg/4 type, and the defect ground of the defect structure of the first layer of coplanar waveguide Part of the opening faces the coplanar waveguide signal line side of the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type, and the defective part of the defect structure of the first layer of coplanar waveguide is a rectangular ring, and the metal sheet in the rectangular ring The ground of the coplanar waveguide is not completely hollowed out, and the defect ground of the defect structure of the second layer of coplanar waveguide is partially nested in the metal sheet coplanar waveguide ground of the defect structure of the defect structure of the first layer of coplanar waveguide, and the second layer of coplanar waveguide The opening of the defective ground portion of the defect structure of the coplanar waveguide faces the side perpendicular to the signal line of the coplanar waveguide in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type.
按照第七种、第八种实施例的结构,滤波器性能参考第五种实施例滤波器的性能。According to the structures of the seventh and eighth embodiments, the performance of the filter refers to the performance of the filter in the fifth embodiment.
本发明第九种、第十种实施例的结构,如图14、15所示,也是在共面波导λg/4型的SIR短路支节单元结构中嵌套有两层共面波导的缺陷结构,第二层共面波导的缺陷结构的缺陷地部分的开口朝向共面波导λg/4型的SIR短路支节单元结构中和共面波导信号线相垂直的一侧。其包含第七、八种实施例中的所有结构,此处不再赘述,除此之外,第二层共面波导的缺陷结构的缺陷地部分为一矩形环,矩形环内的金属片共面波导地不完全镂空。The structure of the ninth and tenth embodiments of the present invention, as shown in Figures 14 and 15, is also a defect structure in which two layers of coplanar waveguides are nested in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type , the opening of the defective ground portion of the defect structure of the coplanar waveguide on the second layer faces the side perpendicular to the signal line of the coplanar waveguide in the SIR short-circuit branch unit structure of the coplanar waveguide λg/4 type. It includes all the structures in the seventh and eighth embodiments, and will not be repeated here. In addition, the defective part of the defect structure of the second-layer coplanar waveguide is a rectangular ring, and the metal sheets in the rectangular ring share the same The surface waveguide is not completely hollowed out.
按照第九种、第十种实施例的结构,滤波器性能参考第六种实施例滤波器的性能。According to the structures of the ninth and tenth embodiments, the performance of the filter refers to the performance of the filter in the sixth embodiment.
应该说明的是,共面波导λg/4型的SIR短路支节单元结构及共面波导的缺陷结构嵌套的层数总共最好不超过3层,因为层数太多会造成通带比较大的损耗。It should be noted that the total number of nested layers of the coplanar waveguide λg/4 type SIR short-circuit branch unit structure and the coplanar waveguide defect structure should not exceed 3 layers, because too many layers will cause a relatively large passband loss.
本领域技术人员可以理解的是,DGS-SIR结构在进行嵌套设计时,应该考虑共面波导SIR结构的谐振零点与共面波导DGS的谐振零点的频率关系,如图16、如图17和如图18所示,共面波导缺陷地的谐振零点f4应该处于共面波导SIR结构较高的谐振零点f2和下边截止频率f3之间,从而形成一个连续的多谐振零点的滤波器。共面波导SIR结构的较低的谐振零点f1主要受较细的传输线的宽度f的影响,宽度f的增加,较低的谐振零点f1会增大,而谐振零点f2保持基本不变;较高的谐振零点f2主要受粗的传输线的长度c的影响,长度c的增加,较高的谐振零点f2会减小,此时下边截止频率f3也随之减小,其减小的范围与f2的减小范围相同,相当于f2和f3两个频率点共同平移了Δf,而谐振零点f1保持基本不变。共面波导缺陷地的谐振零点f4主要受缺陷地的周长有关,周长增大,谐振零点f4会减小,因此在调整频率的过程中,可以先保持其中两个谐振零点不变,调整另一个谐振零点,最终使三个谐振零点的频率关系达到f3>f4>f2。Those skilled in the art can understand that when the DGS-SIR structure is nested, the frequency relationship between the resonance zero point of the coplanar waveguide SIR structure and the resonance zero point of the coplanar waveguide DGS should be considered, as shown in Figure 16, Figure 17 and As shown in Figure 18, the resonance zero point f4 of the coplanar waveguide defect ground should be between the higher resonance zero point f2 of the coplanar waveguide SIR structure and the lower cutoff frequency f3 , thereby forming a continuous multi - resonance zero point filter. The lower resonance zero point f1 of the coplanar waveguide SIR structure is mainly affected by the width f of the thinner transmission line. As the width f increases, the lower resonance zero point f1 will increase, while the resonance zero point f2 remains basically unchanged ; The higher resonance zero point f 2 is mainly affected by the length c of the thick transmission line, the increase of the length c, the higher resonance zero point f 2 will decrease, and at this time the lower cut-off frequency f 3 will also decrease, and its decrease The small range is the same as the reduction range of f 2 , which means that the two frequency points of f 2 and f 3 are shifted by Δf together, while the resonance zero point f 1 remains basically unchanged. The resonance zero point f 4 of the coplanar waveguide defect ground is mainly related to the perimeter of the defect ground. When the perimeter increases, the resonance zero point f 4 will decrease. Therefore, in the process of adjusting the frequency, two of the resonance zero points can be kept unchanged first, and the adjustment Another resonance zero point finally makes the frequency relationship of the three resonance zero points reach f 3 >f 4 >f 2 .
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is a relationship between these entities or operations. any such actual relationship or order exists between them. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes elements not expressly listed. other elements of or also include elements inherent in such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article or apparatus comprising said element.
本说明书中的各个实施例均采用相关的方式描述,各个实施例之间相同相似的部分互相参见即可,每个实施例重点说明的都是与其他实施例的不同之处。尤其,对于系统实施例而言,由于其基本相似于方法实施例,所以描述的比较简单,相关之处参见方法实施例的部分说明即可。Each embodiment in this specification is described in a related manner, the same and similar parts of each embodiment can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and for relevant parts, refer to part of the description of the method embodiment.
以上所述仅为本发明的较佳实施例而已,并非用于限定本发明的保护范围。凡在本发明的精神和原则之内所作的任何修改、等同替换、改进等,均包含在本发明的保护范围内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present invention are included in the protection scope of the present invention.
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