CN105633116B - OLED device and its manufacturing method, display device - Google Patents
OLED device and its manufacturing method, display device Download PDFInfo
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- CN105633116B CN105633116B CN201410719239.4A CN201410719239A CN105633116B CN 105633116 B CN105633116 B CN 105633116B CN 201410719239 A CN201410719239 A CN 201410719239A CN 105633116 B CN105633116 B CN 105633116B
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Abstract
A kind of OLED device of present invention offer and its manufacturing method, display device, the OLED device forms optical filter between the organic material layer of anode and each sub-pixel unit, the optical filter includes electrode under the optical filter stacked gradually, first reflecting layer, piezoelectric material layer, second reflecting layer and optical filter top electrode, by electrode under control optical filter and the voltage of optical filter top electrode to control the medium refraction index of piezoelectric material layer, so that the optical filter only passes through the light wave with each sub-pixel unit corresponding wavelength, it realizes and the adjustability of ambient light is filtered, even if so under strong light, also OLED display screen can be made to clearly indicate image frame, and the brightness of product is not interfered with.
Description
Technical field
The present invention relates to organic electroluminescence device field, more particularly to a kind of OLED device and its manufacturing method, display
Device.
Background technology
Compared with liquid crystal display, and organic electroluminescence device (Organic Light-Emitting Diode, referred to as
For OLED) there is luminous efficiency is high, driving voltage is low, fast response time, rich in color, Ultrathin portable, visualization angle are big etc.
Advantage has catered to the requirement that people develop modern display technology, has become and pay close attention to object in flat display field.
By light extraction mode, OLED points are bottom emitting OLED (Bottom Organic Light-emitting Device, letter
Referred to as BEOLED) and top emitting OLED (TOP Organic Light-emitting Device, referred to as TEOLED).It sends out at bottom
Penetrate OLED structure be OLED is produced on be covered with transparent indium tin oxide (Indium Tin Oxides, referred to as ITO) or
In the glass substrate of indium-zinc oxide (Indium Zinc Oxides, referred to as IZO) electrode, when applying voltage to OLED,
The light that OLED is sent out is projected through transparent ITO (or IZO) electrode.In the bottom emitting OLED structure, transparent ITO (or IZO) electrodes with
It drives the thin film transistor (TFT) (TFT) of OLED to be connected, there are problems that OLED light-emitting areas are competed with TFT, lead to device opening rate
It is relatively low.And top emitting OLED is to make OLED again after opaque total reflection electrode is covered on glass or silicon substrate, it is right
When OLED applies voltage, light is projected from the transparent or semitransparent cathode at top.In display based on top emitting OLED, driving
The TFT of OLED is made in below OLED, so that light-emitting surface is opened with TFT points, the problem that aperture opening ratio can be made low is solved at all.
But the anode construction of OLED generally comprises the metal material of reflection light, the especially anode of top emitting OLED and leads to
Often it is ITO/Ag/ITO structures, outdoors in the environment of strong light, due to the reflected light that anode is strong, OLED can be caused especially to push up
The contrast of transmitting OLED is declined.
A kind of improvement OLED of the U.S. Patent Publication of Publication No. US6411019B1 shows device contrast method, should
Method is one light absorbing layer of setting in the cavity of equipment back side, and the absorbed layer is mainly dry by light absorbing material or destructiveness
Layer composition is related to, which is located on substrate or an electrode, and the light absorbing layer is any from organic material in addition to absorption
Ambient light is also absorbed other than the light emitted in emission layer, so as to improve contrast, but this method has a problem that, is exactly big portion
Divide the light towards absorbed layer emitted from OLED to be also lost, therefore reduces the brightness of display.
The Chinese patent of Publication No. CN1426269A discloses a kind of display, can obtain light from second electrode side,
By inhibiting the reflection enhancement contrast of extraneous light, simplify manufacturing process, and reduce cost.With organic electroluminescent (EL)
The driving substrate of device obtains light from cathode side.Using printing technology, by red color filter, green color filter and blue color
Device is formed in sealing substrate, so that towards organic el device.Using printing technology by red, green and blue colour filter extremely
Few two overlappings, are formed black matrix, and so as to the borderline region towards organic el device, then the wiring between device is electric
Extremely the reflection of extraneous light is suppressed.This scheme is that will have coloured material using mode of printing to be coated on encapsulation cover glass
On, to realize the purpose for reducing reflected light.This method can equally influence brightness and the luminous efficiency of product.
Invention content
The purpose of the present invention is to provide a kind of OLED device and its manufacturing method, display devices, and reflection is reduced to realize
Light and the purpose for not influencing product brightness.
In order to solve the above technical problems, the present invention provides a kind of OLED device, the OLED device includes substrate and more
The pixel unit being formed on the substrate, each pixel unit includes multiple sub-pixel units, the sub-pixel unit
Including anode, cathode and the organic material layer being formed between the anode and the cathode, the sub-pixel unit further includes
The optical filter being formed between the anode and organic material layer, the optical filter include electrode under the optical filter stacked gradually,
First reflecting layer, piezoelectric material layer, the second reflecting layer and optical filter top electrode, by controlling electrode and filter under the optical filter
The voltage of light device top electrode is to control the medium refraction index of the piezoelectric material layer so that the optical filter only by with each sub- picture
The light wave of plain unit corresponding wavelength.
The present invention also provides a kind of OLED device manufacturing methods, including：Pixel unit, each pixel list are formed on substrate
Member includes multiple sub-pixel units, the sub-pixel unit include anode, cathode and be formed in the anode and the cathode it
Between organic material layer；Further include：Optical filter is formed between the anode and organic material layer, the optical filter includes successively
Electrode, the first reflecting layer, piezoelectric material layer, the second reflecting layer and optical filter top electrode, pass through control under the optical filter of stacking
Electrode and the voltage of optical filter top electrode are to control the medium refraction index of the piezoelectric material layer under the optical filter so that described
Optical filter only passes through the light wave with each sub-pixel unit corresponding wavelength.
The present invention more provides a kind of display device, including OLED device as described above.
Compared with prior art, OLED device of the present invention is in anode and the organic material layer of each sub-pixel unit
Between form optical filter, the optical filter includes electrode under the optical filter stacked gradually, the first reflecting layer, piezoelectric material layer,
Two reflecting layer and optical filter top electrode, by electrode under control optical filter and the voltage of optical filter top electrode to control piezoresistive material
The medium refraction index of the bed of material so that the optical filter only by the light wave with each sub-pixel unit corresponding wavelength, is realized to the external world
The adjustability of light filters, though OLED display screen can be made to clearly indicate image frame if so under strong light, and will not
Influence the brightness of product.
Description of the drawings
Fig. 1 is the flow diagram of the OLED device production method of a wherein embodiment of the invention；
Fig. 2 to Fig. 5 is the OLED device manufacturing process midship section schematic diagram of a wherein embodiment of the invention.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific implementation mode be described in detail.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with
Implemented different from other manner described here using other, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table
Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein
Limit the scope of protection of the invention.In addition, three-dimensional space that should be comprising length, width and depth in actual fabrication.
Just as described in the background section, current OLED device is since anode is usually using metal material such as Ag materials,
Lead to that there is very strong reflected light in the environment of strong light outdoors, seriously affected the contrasts of OLED in the sun, shows
Picture is not clear enough.
Based on this, the present invention provides a kind of OLED device, the organic material layer of anode and each sub-pixel unit it
Between form optical filter, the optical filter includes electrode under the optical filter stacked gradually, the first reflecting layer, piezoelectric material layer, second
Reflecting layer and optical filter top electrode, it is described to control by controlling electrode and the voltage of optical filter top electrode under the optical filter
The medium refraction index of piezoelectric material layer so that the optical filter only by the light wave with each sub-pixel unit corresponding wavelength, is realized
Adjustability filtration to ambient light, though OLED display screen can be made to clearly indicate image frame if so under strong light, and
And the brightness of product is not interfered with.
Specifically as shown in figure 5, the pixel unit of OLED device provided in an embodiment of the present invention includes multiple sub-pixel units,
The sub-pixel unit includes the anode 110 being formed on substrate 100, cathode 180 and is formed in the anode 110 and described the moon
Organic material layer between pole 180 is each formed with an optical filter between the anode 110 and organic material layer of each sub-pixel unit
130, the optical filter 130 includes electrode 131 under the optical filter that stacks gradually, the first reflecting layer 132, piezoelectric material layer 133, the
Two reflecting layer 134 and optical filter top electrode 135.
The material of the piezoelectric material layer 133 can be PLZT (using the improved lead zirconat-titanato material of lanthanum) or PMN-PT
(lead magnesio-niobate monocrystal material), the piezoelectric material layer is refractive index or thickness can change with its electric field could penetrate it is certain
The material of optical band realizes the tuning of optical filter by changing optical path difference of the light in optical filter, that is, due to the electricity of piezoelectric material
Flex effect or inverse piezoelectric effect are caused, when changing the electric field of material the refractive index of material can change, therefore electric field changes
Change can change optical path difference of the light in optical filter, to realize the tuning of optical filter.
The first reflecting layer 132, piezoelectric material layer 133, the second reflecting layer 134 of the optical filter 130 form Fabry-
Perot cavity, birefringence effect occurs in Fabry-Perot-type cavity for light wave, and is accompanied by the multiple-beam interference by reflecting to form,
Finally export light wave.Two electrodes of electrode 131 and optical filter top electrode 135 as optical filter, are filtering under the optical filter
Apply external electric field in electrode 131 and optical filter top electrode 135 under device, using the electro-optic birefringent effect of piezoelectric material layer 133, leads to
It crosses and changes electric field strength to change the medium refraction index of piezoelectric material layer 133, can reach the purpose of refractive index tuning, generate
The effect of filter tunable filtering so that ambient light only passes through the light with sub-pixel unit corresponding wavelength in pixel unit
Wave, and other light are filtered, be conducive to the brightness and the luminous efficiency that improve product, while not interfering with the brightness of product.
In the preferred embodiment of the present invention, electrode 131 and the material of optical filter top electrode 135 are ITO under optical filter, are filtered
Electrode 131 and optical filter top electrode 135 and piezoelectric material layer 133 is of same size under device.Certainly, 131 He of electrode under optical filter
Optical filter top electrode 135 can also be to be formed by other transparent conductive materials, also, the two can be by same light transmitting electro-conductive material
Material is formed, and can also be formed by different translucent conductive materials.The methods of sputtering, hot evaporation or chemical vapor deposition may be used
Film layer is formed, then forms electrode 131 and optical filter top electrode 135 under optical filter by the techniques such as developing and etching.It can be with
Understand, the present invention does not limit its shape, as long as can apply voltage to optical filter by it.
Two layers reflectance coating of first reflecting layer, 132 and second reflecting layer 134 as optical filter, can be by same height
Reflective conductive material is formed, and can also be formed by different high reflection conductive materials.Sputtering, hot evaporation or chemical gas may be used
Mutually the methods of deposition forms film, then forms the first reflecting layer 132 and the second reflecting layer by the techniques such as developing and etching
134。
Wherein, the thickness of the piezoelectric material layer 133 is between 300~400nm, the reflection of the first reflecting layer 132 and second
The thickness of layer 134 is between 100~200nm.Certainly, the invention is not limited in above-mentioned thickness, can be filtered according to specific
It is required that doing adaptive change.
As shown in figure 5, the OLED device further includes being formed between the optical filter 130 and second plate film layer 112
First insulating layer 120, to realize the electric isolution of electrode 131 and anode 110 under the optical filter；Also, it is described
OLED device further includes the second insulating layer 140 being formed between the optical filter 130 and third anode film layer 113, is used
To realize the electric isolution of the optical filter top electrode 135 and anode 110.In other embodiments of the present invention, it can also be used
His method realizes the buffer action of the optical filter 130 and anode 110, for example, covering one in the second plate film layer 112
The first insulating layer of flood, and opening is formed on first insulating layer, the third anode film layer passes through the first insulating layer
Opening is realized with second plate film layer and is overlapped.
In the present embodiment, the anode 110 includes the 111, second sun of first anode film layer being sequentially formed on substrate 100
The third anode film layer 113 of pole film layer 112 and covering the second plate film layer 112 and optical filter 130.The first anode
The material of film layer 111 and third anode film layer 113 can be ITO (indium tin oxide), InZnO (indium-zinc oxide) or ITZO
The material of (indium tin zinc oxide), the second plate film layer 112 can be silver-colored (Ag).The 111, second sun of the first anode film layer
The anode of pole film layer 112 and third anode film layer 113 collectively as OLED device.Using the sun of ITO/Ag/ITO stacked structures
Pole, light transmission and reflecting effect are preferable.
It should be noted that the OLED device for including a pixel unit is shown in attached drawing of the embodiment of the present invention, one
The organic material layer of pixel unit respectively includes formed by blue emitting material, green luminescent material, red illuminating material
One luminescent layer 161, the second luminescent layer 162, third luminescent layer 163.It may occur to persons skilled in the art that in actual processing process
In oled panel generally comprise the multiple pixel units being arranged in matrix.Further, in embodiments of the present invention,
It is the explanation carried out so that a pixel unit separately includes the pixel subelement of red, green and blue three kinds of colors as an example.
It may occur to persons skilled in the art that the pixel subelement of above-mentioned three kinds of colors can be arranged with any order, for example,
In OLED device as shown in Figure 5, pixel unit is the arrangement of BGR sequences, that is, respectively includes being arranged in order from left to right
Blue pixel subelement, green pixel subelement and red pixel subelement can also be the row of the forms such as RGB, GRB certainly
Row are ranked sequentially in a row, are not listed one by one herein.Alternatively, a red pixel can also be included at least in a pixel unit
Subelement, a green pixel subelement or a blue pixel subelement, for example, a pixel unit may include two groups red
Turquoise pixel subelement, putting in order can be shaped like RRGGBB, and it includes two green pixel subelements that can also be, arrangement is suitable
Sequence can be shaped like RGBG, etc..Certainly this is also only a kind of for example, picture in pixel unit of the embodiment of the present invention pair
The arrangement mode of sub-prime unit number and pixel subelement is not restricted.
As shown in figure 5, the OLED device further include be formed in the third anode film layer 113 each sub-pixel unit it
Between insulated column (Pillar) 150.Further, the organic material layer of the OLED device further includes covering the third successively
The hole injection layer (HIL) 171 and hole transmission layer (HTL) 172 of anode film layer 113 and insulated column 150, and, it covers successively
The electron transfer layer (ETL) of first luminescent layer 161, the second luminescent layer 162, third luminescent layer 163 and hole transmission layer 172
173 and electron injecting layer (EIL) 174.Preferably, the blue pixel subelement of the OLED device only includes that one layer of hole is injected
Layer 171, green pixel subelement include two layers of hole injection layer 171,175, and red pixel subelement includes then that three layers of hole are noted
Enter layer 171,175,176, to solve position chamber effect.It is understood that the specific film layer structure of organic material layer can basis
Specific device parameters are changed, and are not limited herein.
Preferably, cathode 180 is the materials such as alkali metal and the alkaline earth of low work function, for example, ITO (indium tin oxide),
InZnO (indium-zinc oxide) and ITZO (indium tin zinc oxide).Added by external circuits wherein between cathode 180 and anode 110
Upper voltage.Electronics is injected using the cathode 180, anode 110 injects hole, is formed by electrons and holes and meets in luminescent layer
And exciton is generated, to which excitation light-emitting material shines.
The manufacturing method of 1 to 5 OLED device that the present invention will be described in detail provides below in conjunction with the accompanying drawings.
First, as shown in Fig. 2, forming first anode film layer 111 and second plate film layer 112 on the substrate 100.This reality
Apply in example, the material of the substrate 100 include it is one or more in quartz, glass, metal foil, resin film and resin sheet,
In, resin includes PMMA (polymethyl methacrylate), PET (polyethylene terephthalate), PBN (poly- naphthalenedicarboxylic acid second
Diol ester) and polycarbonate resin etc..The material of the first anode film layer 111 and second plate film layer 112 can be gold
Belong to, the materials such as alloy or metal oxide, graphene, carbon nanotube.For example, the material of the first anode film layer 111 can be with
It is ITO (indium tin oxide), InZnO (indium-zinc oxide) or ITZO (indium tin zinc oxide), the material of the second plate film layer 112
Material can be silver-colored (Ag).
Further, it is formed before first anode film layer 111 and second plate film layer 112, it can also be first on substrate
A filter circuit (not shown) is formed, the filter circuit is electrically connected with electrode under the optical filter and optical filter top electrode
It connects, for applying voltage to electrode under the optical filter and optical filter top electrode to control the medium refraction of the piezoelectric material layer
Rate.Certainly, first anode film layer 111 can also be for example formed in other steps and second plate film layer 112 is formed later
The filter circuit.
Then, as shown in figure 3, forming optical filter 130 in each sub-pixel unit in the second plate film layer 112.
The optical filter 130 is by electrode under optical filter 131, the first reflecting layer 132, piezoelectric material layer 133, the second reflecting layer 134, filter
The stacked structure that light device top electrode 135 forms.
In the present embodiment, in order to realize the electric isolution of electrode 131 and optical filter top electrode 135 and anode under optical filter,
It is formed before optical filter 130, each sub-pixel unit in second plate film layer 112 forms the first insulating layer 120 respectively.So
Afterwards, electrode 131 under optical filter is formed on the first insulating layer 120, under optical filter on electrode 131 and the first insulating layer 120
The first reflecting layer 132 is formed, piezoelectric material layer 133 is formed on first reflecting layer 132, in the piezoelectric material layer 133
And first form the second reflecting layer 134 on reflecting layer 132, and optical filter top electrode is formed on second reflecting layer 134
135, so complete the making of optical filter.Subsequently, is formed on electrode 135 and the second reflecting layer 134 on the filter
Two insulating layers 140, to realize the electric isolution of optical filter top electrode 135 and anode.First insulating layer 120 and second insulating layer
140 can be nitride or oxide, such as silicon oxide or silicon nitride, and sputtering, hot evaporation or chemical vapor deposition may be used
The methods of product realizes that, since these techniques belong to the prior art, it is not described here in detail by the techniques such as developing and etching.
Electrode 131 and optical filter top electrode 135 can be formed by same translucent conductive material under the optical filter, also may be used
To be formed by different translucent conductive materials.In preferred embodiment, electrode 131 and optical filter top electrode 135 under the optical filter
Material be ITO, the methods of sputtering, hot evaporation or chemical vapor deposition may be used, by the techniques such as developing and etching
It realizes.Two layers reflectance coating of first reflecting layer, 132 and second reflecting layer 134 as optical filter, can be by same light transmission
Conductive material is formed, and can also be formed by different translucent conductive materials.The material of the piezoelectric material layer 133 can be PLZT
(using the improved lead zirconat-titanato material of lanthanum) or PMN-PT (lead magnesio-niobate monocrystal material).The thickness of the piezoelectric material layer 133
Between 300~400nm, the thickness in the first reflecting layer 132 and the second reflecting layer 134 is between 100~200nm.
The first reflecting layer 132, piezoelectric material layer 133, the second reflecting layer 134 of the optical filter 130 form Fabry-
Perot cavity, birefringence effect occurs in Fabry-Perot-type cavity for light wave, and is accompanied by the multiple-beam interference by reflecting to form,
Finally export light wave.Meanwhile two electrodes of electrode 131 and optical filter top electrode 135 as optical filter, institute under the optical filter
It states electrode 131 and optical filter top electrode 135 under optical filter to be electrically connected with the filter circuit, utilizes the electricity of piezoelectric material layer 133
Birefringence effect is controlled, external electric field is applied in electrode 131 and optical filter top electrode 135 under optical filter by the filter circuit,
Change the medium refraction index of piezoelectric material layer 133 by changing electric field strength, can reach the purpose of refractive index tuning, production
The effect of raw filter tunable filtering.The optical filter 130 is formed between anode and the organic material layer of each sub-pixel,
Under ambient light, the voltage of the electrode of optical filter 130 is adjusted by filter circuit so that ambient light is only logical in pixel unit
The light wave with sub-pixel corresponding wavelength is crossed, and other light are filtered, ambient light is used.Meanwhile first insulation
Layer 120 and second insulating layer 140 are realizing the optical filter 130 and OLED other parts buffer actions, the optical filter 130
Shining for OLED device itself is not influenced.
Next, as shown in figure 4, forming third anode film layer in the second plate film layer 112 and optical filter
113, to realize the overlap joint of itself and second plate film layer 112.The material of the third anode film layer 113 include ITO, InZnO or
ITZO.The first anode film layer 111, second plate film layer 112 and third anode film layer 113 are collectively as OLED device
Anode.The anode of ITO/Ag/ITO stacked structures is used in preferred embodiment, light transmission and reflecting effect are preferable.
Finally, it is formed for separating sub-picture elements unit between each sub-pixel unit of the third anode film layer 113
Insulated column 150 forms organic material layer in each sub-pixel unit, and is formed on insulated column 150 and organic material layer
Cathode 170.
As shown in figure 5, organic material layer specifically include the first luminescent layer 161 of blue light-emitting, green light the second luminescent layer
162, the third luminescent layer 163 to glow, these three luminescent layers with solid color correspond to blue, green, red three primary colors respectively.?
In other embodiments of the invention, or the luminescent layer to emit white light, and increase colored filter on it, to realize OLED
The colored display of device.
It should be noted that after forming insulated column 150, being formed before each luminescent layer, the covering third is sequentially formed
The hole injection layer (HIL) 171 and hole transmission layer (HTL) 172 of anode film layer 113 and insulated column 150；Formed each luminescent layer it
Afterwards, covering first luminescent layer 161, the second luminescent layer 162, third luminescent layer 163 and hole transmission layer 172 are sequentially formed
Electron transfer layer (ETL) 173 and electron injecting layer (EIL) 174, to further improve the luminous efficiency of OLED device.In order to
Microcavity effect is solved, also additionally makes one layer between the hole injection layer 171 of green pixel subelement and hole transmission layer 172
Hole injection layer 175 additionally makes two layers between the hole injection layer 171 and hole transmission layer 172 of red pixel subelement
Hole injection layer 175,176, also that is, blue pixel subelement only includes one layer of hole injection layer 171, green pixel subelement packet
Two layers of hole injection layer 171,175 is included, red pixel subelement includes then three layers of hole injection layer 171,175,176.It can manage
Solution, the specific film layer structure of organic material layer can be changed according to specific device parameters, not limit herein.Having
When body is implemented, organic material layer may be used the modes such as hot evaporation and realize, since these techniques belong to the prior art, not do herein
It is described in detail.
Further, after forming cathode 180, optically coupled layers (CPL) 190 are formed usually on cathode 180, to improve
Visual angle and raising light emission rate.
The embodiment of the present invention also provides a kind of display device, including any one OLED device as described above.With with
Present invention provide the identical advantageous effect of OLED device, due to OLED device in the aforementioned embodiment into
Detailed description is gone, details are not described herein again.
Although the invention has been described by way of example and in terms of the preferred embodiments, but it is not for limiting the present invention, any this field
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this hair
Bright technical solution makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, and according to the present invention
Technical spirit to any simple modifications, equivalents, and modifications made by above example, belong to technical solution of the present invention
Protection domain.
Claims (15)
1. a kind of OLED device, the OLED device includes substrate and the pixel unit that is formed on the substrate, the picture
Plain unit includes multiple sub-pixel units, and the sub-pixel unit includes anode, cathode and is formed in the anode and described the moon
Organic material layer between pole, which is characterized in that the sub-pixel unit further includes optical filter, and the anode includes sequentially forming
In the of the first anode film layer and second plate film layer and the covering second plate film layer and optical filter on the substrate
Three anode film layers, the optical filter are formed between the second plate film layer and organic material layer, the optical filter include according to
Electrode, the first reflecting layer, piezoelectric material layer, the second reflecting layer and optical filter top electrode, pass through control under the optical filter of secondary stacking
Electrode and the voltage of optical filter top electrode are made under the optical filter to control the medium refraction index of the piezoelectric material layer so that institute
Optical filter is stated only by the light wave with each sub-pixel unit corresponding wavelength.
2. OLED device as described in claim 1, which is characterized in that the material of the piezoelectric material layer is PLZT or PMN-
PT。
3. OLED device as described in claim 1, which is characterized in that the material of electrode and optical filter top electrode under the optical filter
Material is ITO, InZnO or ITZO.
4. OLED device as described in claim 1, which is characterized in that the thickness of the piezoelectric material layer 300~400nm it
Between, the thickness in first reflecting layer and the second reflecting layer is between 100~200nm.
5. the OLED device as described in any one of Claims 1-4, which is characterized in that further include being formed in the substrate
On filter circuit, the filter circuit is electrically connected with electrode under the optical filter and optical filter top electrode with to the optical filter
Lower electrode and optical filter top electrode apply voltage.
6. OLED device as described in claim 1, which is characterized in that the material of the first anode film layer and third anode film layer
Material is ITO, InZnO or ITZO, and the material of the second plate film layer is silver.
7. OLED device as described in claim 1 or 6, which is characterized in that further include being formed in the optical filter and the second sun
The first insulating layer between the film layer of pole and the second insulating layer being formed between the optical filter and third anode film layer.
8. a kind of OLED device manufacturing method, including：Pixel unit is formed on substrate, the pixel unit includes multiple sub- pictures
Plain unit, the sub-pixel unit include anode, cathode and the organic material layer being formed between the anode and the cathode；
It is characterized in that, further including：Formed optical filter, the optical filter include electrode under the optical filter stacked gradually, the first reflecting layer,
Piezoelectric material layer, the second reflecting layer and optical filter top electrode, by controlling electrode and optical filter top electrode under the optical filter
Voltage to control the medium refraction index of the piezoelectric material layer so that the optical filter is only by corresponding with each sub-pixel unit
The light wave of wavelength；
The anode and optical filter are formed by following steps：First anode film layer and second plate are formed on the substrate
Film layer；Optical filter is formed in each sub-pixel unit in the second plate film layer；And the second plate film layer with
And third anode film layer is formed on optical filter；Wherein, the optical filter is formed in the second plate film layer and organic material layer
Between.
9. OLED device manufacturing method as claimed in claim 8, which is characterized in that the material of the piezoelectric material layer is PLZT
Or PMN-PT.
10. OLED device manufacturing method as claimed in claim 8, which is characterized in that electrode and optical filter under the optical filter
The material of top electrode is ITO, InZnO or ITZO.
11. OLED device manufacturing method as claimed in claim 8, which is characterized in that the thickness of the piezoelectric material layer is 300
Between~400nm, the thickness in first reflecting layer and the second reflecting layer is between 100~200nm.
12. the OLED device manufacturing method as described in any one of claim 8 to 11, which is characterized in that described in formation
Before anode, form a filter circuit on the substrate, the filter circuit on electrode and optical filter under the optical filter
Electrode electrical connection to electrode under the optical filter and optical filter top electrode to apply voltage.
13. OLED device manufacturing method as claimed in claim 8, which is characterized in that the first anode film layer and third sun
The material of pole film layer is ITO, InZnO or ITZO, and the material of the second plate film layer is silver.
14. the OLED device manufacturing method as described in claim 8 or 13, which is characterized in that further include：
The first insulating layer is formed between the optical filter and second plate film layer；And
Second insulating layer is formed between the optical filter and third anode film layer.
15. a kind of display device, which is characterized in that include the OLED device as described in any one of claim 1 to 7.
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|---|---|---|---|---|
| CN105932171B (en) * | 2016-07-08 | 2018-03-23 | 京东方科技集团股份有限公司 | Organic electroluminescence device and preparation method thereof, display device |
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