CN105603370A - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN105603370A CN105603370A CN201410593283.5A CN201410593283A CN105603370A CN 105603370 A CN105603370 A CN 105603370A CN 201410593283 A CN201410593283 A CN 201410593283A CN 105603370 A CN105603370 A CN 105603370A
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- solenoid
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Abstract
The present invention provides semiconductor processing equipment, which comprises a reaction chamber and an electromagnetic device arranged on the outer side of the reaction chamber, wherein the electromagnetic device comprises a power supply and a plurality of independent electromagnetic coils, the plurality of the electromagnetic coils are arranged at intervals along the circumferential direction of the reaction chamber, and the power supply supplies electric energy for the electromagnetic coils. With the semiconductor processing equipment of the present invention, the magnetic field intensities at different radius positions can be real-timely adjusted, and the magnetic field intensities at the same radius and different circumferential positions can be real-timely adjusted.
Description
Technical field
The invention belongs to microelectronic, relate to one and can control plasma in reaction chamberThe semiconductor processing equipment that body distributes.
Background technology
For by physical vapour deposition (PVD) (PhysicalVaporDeposition, be called for short PVD)Equipment is applied to deep hole padding field, to realize the filling to high-aspect-ratio hole. Long in developmentWhen journey PVD technology, in the arranged outside of reaction chamber limit magnet.
Fig. 1 a is the structural representation of typical long-range PVD equipment. As shown in Figure 1a, longJourney PVD equipment comprises reaction chamber 11, arranges respectively in top and the bottom of reaction chamber 11Target 12 and chip bench 13, controlled sputtering source 15 is located at the top of target 12, bias voltage radio frequencyPower supply 20 is electrically connected with chip bench 13, and radius is established equably in the outside of reaction chamber 11 etc.Put limit magnet 14. Limit magnet 14 is for regulating the distribution of reaction chamber 11 interior plasmas.Different controlled sputtering sources 15, different bias voltage radio-frequency power supply 20 need different limit magnet 14 withCoupling, just can reach predetermined technic index.
Early stage long-range PVD equipment is to adopt permanent magnet as limit magnet 14, according to permanent magnetDensity regulate magnetic field intensity. This setup, can not be according to need in technical processWhen realistic, regulate magnetic field intensity.
Long-range PVD equipment after improvement is to adopt solenoid (electromagnet) as limit magnet14. As shown in Figure 1 b, limit magnet 14 comprise four groups of horizontal coilings solenoid 16,17,18,19. When use, two adjacent groups solenoid applies reversing the current, by controlling each lineIn circle, the size of electric current regulates the distribution of magnetic field intensity. But this setup can only be adjustedThe intensity in joint magnetic field, different radii place, and cannot adjust same radius, different circumferential location magneticThe intensity of field. That is to say, the adjustable range of the long-range PVD equipment after improvement is limited, cannotMeet the instructions for use to long-range PVD equipment.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of semiconductor processing equipment, not only canTo regulate in real time the Distribution of Magnetic Field at different radii place, and can regulate in real time same radius, noWith the Distribution of Magnetic Field of circumferential location.
The technical scheme adopting solving the problems of the technologies described above is to provide a kind of semiconductorProcess equipment, comprises reaction chamber and the calutron of being located at described reaction chamber outside, described inCalutron comprises power supply and multiple independently solenoid, and described multiple solenoids are along reactionThe circumferencial direction of chamber is spaced, and described power supply provides electric energy for described solenoid.
Wherein, described multiple solenoid parallel connection or series connection.
Wherein, the quantity of described power supply is identical with the quantity of described solenoid, each described electricitySource is that a described solenoid is powered separately.
Wherein, comprise n described power supply, described multiple solenoids are divided into n group, oneThe corresponding one group of solenoid of power supply, the described solenoid series connection in every group of solenoid and/or alsoConnection, the integer of n >=2.
Wherein, the angle between the axis of described solenoid and the locular wall of described reaction chamber is180 ° of 0≤θ <'s is arbitrarily angled.
Wherein, described solenoid is evenly distributed along the circumferencial direction of described reaction chamber.
Wherein, described solenoid is arranged along the circumferencial direction unequal-interval of described reaction chamber.
Wherein, described solenoid comprises winding.
Wherein, described solenoid comprises winding and iron core, and described iron core is embedded at described windingIn middle cavity.
Wherein, described semiconductor processing equipment is for deposit film or etching. The present invention have withLower beneficial effect:
In semiconductor processing equipment provided by the invention, be located at the electromagnetism in reaction chamber outsideDevice comprises the spaced multiple independently solenoids of circumferencial direction along reaction chamber, controlThe large I of the electric current of system input solenoid realizes and regulates in real time the magnetic field at different radii place strongDegree, the while can regulate the magnetic field intensity of same radius, different circumferential locations in real time.
Brief description of the drawings
Fig. 1 a is the structural representation of typical long-range PVD equipment;
Fig. 1 b is the structural representation of the long-range PVD equipment after improving;
Fig. 2 is the structure diagram of embodiment of the present invention semiconductor processing equipment;
Fig. 3 a-Fig. 3 f is respectively the principle of the embodiment of the present invention one to embodiment six calutronsFigure;
Fig. 4 a is the structure diagram of another embodiment of the present invention semiconductor processing equipment;
Fig. 4 b is the structure diagram of yet another embodiment of the invention semiconductor processing equipment.
Detailed description of the invention
For making those skilled in the art understand better technical scheme of the present invention, knot belowClosing accompanying drawing is described in detail semiconductor processing equipment provided by the invention.
As shown in Figure 2, semiconductor processing equipment provided by the invention comprises reaction chamber 21,The top of reaction chamber 21 and bottom arrange respectively target 22 and chip bench 23, controlled sputtering source25 are located at the top of target 22, and bias voltage radio-frequency power supply 26 is electrically connected with chip bench 23. InsteadAnswer the outside of chamber 21 to be provided with calutron, calutron comprises multiple solenoids 27 and electricitySource (not shown), multiple solenoids are along the circumferencial direction interval row of reaction chamber 21Row, power supply is that solenoid 27 is powered.
The calutron that the present embodiment provides can have the multiple form that arranges, the number of solenoidAmount can be established arbitrarily according to actual conditions (as the uniformity in the size of reaction chamber, magnetic field etc.)Put. Below only be introduced one by one as an example of four solenoids example.
Embodiment mono-
As shown in Fig. 4 a, in embodiment mono-, four solenoid parallel connections, and by an electricitySource power supply. When use, the circumferencial direction interval by four solenoids 27 along reaction chamber 21Arrange. By regulating density and the solenoid 27 and reaction chamber 21 of solenoid 27Locular wall between distance can change the magnetic field intensity of reaction chamber 21 interior zoness of different, fromAnd realize the alienation control of the magnetic field intensity of same radius diverse location.
Particularly, on the circumferencial direction of reaction chamber 21, the density of solenoid 27 canWith according to the actual needs in magnetic field is arranged arbitrarily, when in as relatively strong in needs the magnetic field, electromagnetismThe setting of coil 27 is closeer; When in as relatively weak in needs the magnetic field, the setting of solenoid 27Thinner. When solenoid 27 is closeer, the magnetic field of corresponding region with it in reaction chamber 21Uniformity is more excellent. In other words,, according to the needs of actual service condition, solenoid is along reaction chamberThe circumferencial direction of chamber can equidistantly be arranged, and also can arrange by unequal-interval. Be understood that, to the greatest extentIn pipe the present embodiment, having described solenoid 27 establishes along the circumferencial direction interval of reaction chamber 21Put, but this does not represent the certain distance of necessary reservation between two adjacent solenoids 27,In fact,, according to the requirement to magnetic field, two adjacent solenoids 27 also can be close toTogether.
Distance between the locular wall of solenoid 27 and reaction chamber 21 also can be according to magneticActual needs arrange arbitrarily, when in as relatively strong in needs the magnetic field, solenoid 27 withClose together between the locular wall of reaction chamber 21; When feeble field as relatively strong in needs, electricityDistant between the locular wall of magnetic coil 27 and reaction chamber 21.
Embodiment bis-
As shown in Figure 3 b, in embodiment bis-, four solenoid series connection, and by an electricitySource power supply. When use, the circumferencial direction interval by four solenoids 27 along reaction chamber 21Arrange. Identical with embodiment mono-, by regulating density and the solenoid of solenoid 2727 and the locular wall of reaction chamber 21 between distance can regulate in reaction chamber 21 not same districtThe magnetic field intensity in territory, thus realize the alienation control of the magnetic field intensity of same radius diverse location.
Particularly, on the circumferencial direction of reaction chamber 21, the density of solenoid 27 canWith according to the actual needs in magnetic field is arranged arbitrarily, when in as relatively strong in needs the magnetic field, electromagnetismThe setting of coil 27 is closeer; When in as relatively weak in needs the magnetic field, the setting of solenoid 27Thinner. In the time that solenoid 27 is closeer, the uniformity of reaction chamber 21 internal magnetic fields is more excellent. ChangeYan Zhi, according to the needs of actual service condition, solenoid can along the circumferencial direction of reaction chamberEquidistantly to arrange, also can arrange by unequal-interval. Be understood that, although retouch in the present embodimentStated solenoid 27 and arranged along the circumferencial direction interval of reaction chamber 21, but this does not representBetween two adjacent solenoids 27, must retain certain distance, in fact, according to rightThe requirement in magnetic field, two adjacent solenoids 27 also can be close together.
Distance between the locular wall of solenoid 27 and reaction chamber 21 also can be according to magneticActual needs arrange arbitrarily, when in as relatively strong in needs the magnetic field, solenoid 27 withClose together between the locular wall of reaction chamber 21; When feeble field as relatively strong in needs, electricityDistant between the locular wall of magnetic coil 27 and reaction chamber 21.
Embodiment tri-
As shown in Figure 3 c, in embodiment tri-, the corresponding power supply of each solenoid,Four all power supplies separately of solenoid 27. Regulate the power supply of solenoid 27 correspondences can change itThe magnetic field producing. When use, the circumferencial direction by four solenoids 27 along reaction chamber 21Interval arranges. Identical with embodiment mono-, embodiment bis-, by regulating dredging of solenoid 27Distance between close and solenoid 27 and the locular wall of reaction chamber 21 is same can regulate anti-Answer the magnetic field intensity of chamber 21 interior zoness of different, thereby realize the magnetic of same radius diverse locationThe alienation control of field intensity.
Particularly, on the circumferencial direction of reaction chamber 21, the density of solenoid 27 canWith according to the actual needs in magnetic field is arranged arbitrarily, when in as relatively strong in needs the magnetic field, electromagnetismThe setting of coil 27 is closeer; When in as relatively weak in needs the magnetic field, the setting of solenoid 27Thinner. In the time that solenoid 27 is closeer, the uniformity of reaction chamber 21 internal magnetic fields is more excellent. ChangeYan Zhi, according to the needs of actual service condition, solenoid can along the circumferencial direction of reaction chamberEquidistantly to arrange, also can arrange by unequal-interval. Be understood that, although retouch in the present embodimentStated solenoid 27 and arranged along the circumferencial direction interval of reaction chamber 21, but this does not representBetween two adjacent solenoids 27, must retain certain distance, in fact, according to rightThe requirement in magnetic field, two adjacent solenoids 27 also can be close together.
Distance between the locular wall of solenoid 27 and reaction chamber 21 also can be according to magneticActual needs arrange arbitrarily, when in as relatively strong in needs the magnetic field, solenoid 27 withClose together between the locular wall of reaction chamber 21; When feeble field as relatively strong in needs, electricityDistant between the locular wall of magnetic coil 27 and reaction chamber 21.
In addition, the present embodiment also can be by regulating separately the merit of the power supply of solenoid 27Rate and change the magnetic field intensity of corresponding region, realizes the solenoid magnetic field intensity of ad-hoc locationAdjusting, thereby realize Precise control to magnetic field intensity.
Embodiment tetra-
As shown in Figure 3 d, in embodiment tetra-, four solenoids 27 are divided into two groups, withTwo solenoid parallel connections in one group, every group by a Power supply, adjusts thereby realize groupingControl.
When use, four solenoids 27 are established along the circumferencial direction interval of reaction chamber 21Put. Solenoid 27 in same group can adjacently arrange, and also can use feelings according to realityThe interspersed setting of solenoid in condition and other group. Identical with embodiment mono-, embodiment bis-, logicalOverregulate the density of solenoid 27 and solenoid 27 and reaction chamber 21 locular wall itBetween distance can regulate equally the magnetic field intensity of reaction chamber 21 interior zoness of different, thereby realThe alienation control of the magnetic field intensity of existing same radius diverse location. Concrete set-up mode is referring to enforcementExample one or embodiment bis-, do not repeat them here.
Embodiment tetra-can realize the Precise control to magnetic field equally, and with embodiment tri-Compare, reduced the quantity of power supply, reduced the cost of calutron.
Embodiment five
As shown in Figure 3 e, in embodiment five, four solenoids 27 are divided into two groups, withTwo solenoids series connection in one group, every group by a Power supply, adjusts thereby realize groupingControl.
When use, four solenoids 27 are established along the circumferencial direction interval of reaction chamber 21Put. Solenoid 27 in same group can adjacently arrange, and also can use feelings according to realityThe interspersed setting of solenoid in condition and other group. Identical with embodiment mono-, embodiment bis-, logicalOverregulate the density of solenoid 27 and solenoid 27 and reaction chamber 21 locular wall itBetween distance can regulate equally the magnetic field intensity of reaction chamber 21 interior zoness of different, thereby realThe alienation control of the magnetic field intensity of existing same radius diverse location. Concrete set-up mode is referring to enforcementExample one or embodiment bis-, do not repeat them here.
Embodiment five can realize the Precise control to magnetic field equally, and with embodiment tri-Compare, reduced the quantity of power supply, reduced the cost of calutron.
Embodiment six
As shown in Fig. 3 f, in embodiment six, four solenoids 27 are divided into two groups, twoThe connected mode difference of the solenoid in group, two solenoids series connection in a group, anotherTwo solenoid parallel connections in one group. Every group by a Power supply, adjusts thereby realize groupingControl.
When use, four solenoids 27 are established along the circumferencial direction interval of reaction chamber 21Put. Solenoid 27 in same group can adjacently arrange, and also can use feelings according to realityThe interspersed setting of solenoid in condition and other group. Identical with embodiment mono-, embodiment bis-, logicalOverregulate the density of solenoid 27 and solenoid 27 and reaction chamber 21 locular wall itBetween distance can regulate equally the magnetic field intensity of reaction chamber 21 interior zoness of different, thereby realThe alienation control of the magnetic field intensity of existing same radius diverse location. Concrete set-up mode is referring to enforcementExample one or embodiment bis-, do not repeat them here.
Embodiment six can realize the Precise control to magnetic field equally, and with embodiment tri-Compare, reduced the quantity of power supply, reduced the cost of calutron.
Although in embodiment tetra-to embodiment six, only introduced solenoid be divided into two groups.When this does not represent to use, solenoid can only be divided into two groups. In fact, solenoidGrouping situation is to change arbitrarily according to actual needs.
In embodiment mono-to embodiment six, solenoid is parallel with the locular wall of reaction chamber,Angle between solenoid and the locular wall of reaction chamber is 0 °. But the present invention does not limit toIn this. In fact, the angle between solenoid and the locular wall of reaction chamber is can be 0≤θ180 ° of <'s is arbitrarily angled. As shown in Fig. 4 a, between solenoid and the locular wall of reaction chamberAngle be 90 °. As shown in Figure 4 b, the angle between solenoid and the locular wall of reaction chamberIt is 45 °.
In addition, the solenoid of the present embodiment comprises winding, and winding is exactly solenoid. OrPerson, solenoid comprises winding and iron core, iron core is embedded in the cavity in the middle of winding.
It should be noted that, the semiconductor processing equipment that the present embodiment provides can be used as thin film depositionEquipment, for implementing depositing operation; Or as etching apparatus, for implementing etching technics.
In semiconductor processing equipment provided by the invention, be located at the electromagnetism in reaction chamber outsideDevice comprises the spaced multiple independently solenoids of circumferencial direction along reaction chamber, logicalThe large I of crossing the electric current of control inputs solenoid realizes the magnetic field that regulates in real time different radii placeIntensity, the while can regulate the magnetic field intensity of same radius, different circumferential locations in real time, increasesAdd the flexibility that reaction chamber internal magnetic field is regulated.
Be understandable that, above embodiment is only used to illustrate principle of the present invention and adoptsWith illustrative embodiments, but the present invention is not limited thereto. General in this areaLogical technical staff, without departing from the spirit and substance in the present invention, can makeVarious modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a semiconductor processing equipment, comprises reaction chamber and is located at described reaction chamber outsideCalutron, it is characterized in that, described calutron comprises power supply and multiple independently electromagnetismCoil, described multiple solenoids are spaced along the circumferencial direction of reaction chamber, described power supplyFor described solenoid provides electric energy.
2. semiconductor processing equipment according to claim 1, is characterized in that, described manyIndividual solenoid parallel connection or series connection.
3. semiconductor processing equipment according to claim 1, is characterized in that, described electricityThe quantity in source is identical with the quantity of described solenoid, and each described power supply is a described electromagnetismCoil is powered separately.
4. semiconductor processing equipment according to claim 1, is characterized in that, comprises nIndividual described power supply, described multiple solenoids are divided into n group, a corresponding one group of electromagnetism of power supplyCoil, the described solenoid series connection in every group of solenoid and/or in parallel, the integer of n >=2.
5. semiconductor processing equipment according to claim 1, is characterized in that, described electricityAngle between the axis of magnetic coil and the locular wall of described reaction chamber is appointing of 180 ° of 0≤θ <Meaning angle.
6. semiconductor processing equipment according to claim 1, is characterized in that, described electricityMagnetic coil is evenly distributed along the circumferencial direction of described reaction chamber.
7. semiconductor processing equipment according to claim 1, is characterized in that, described electricityMagnetic coil is arranged along the circumferencial direction unequal-interval of described reaction chamber.
8. according to the semiconductor processing equipment described in claim 1-7 any one, its feature existsIn, described solenoid comprises winding.
9. according to the semiconductor processing equipment described in claim 1-7 any one, its feature existsIn, described solenoid comprises winding and iron core, described iron core is embedded in the middle of described windingIn cavity.
10. semiconductor processing equipment according to claim 1, is characterized in that, described halfConductor process equipment is for deposit film or etching.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410593283.5A CN105603370A (en) | 2014-10-29 | 2014-10-29 | Semiconductor processing equipment |
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| CN201410593283.5A CN105603370A (en) | 2014-10-29 | 2014-10-29 | Semiconductor processing equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172396A (en) * | 2016-12-07 | 2018-06-15 | 北京北方华创微电子装备有限公司 | Thin magnetic film deposition chambers and film deposition equipment |
| CN111411338A (en) * | 2020-04-07 | 2020-07-14 | 北京北方华创微电子装备有限公司 | Magnetic force piece structure in semiconductor equipment and semiconductor magnetron sputtering equipment |
| CN113416938A (en) * | 2021-08-25 | 2021-09-21 | 陛通半导体设备(苏州)有限公司 | Sputtering equipment and method capable of adjusting film stress |
| RU2777653C1 (en) * | 2021-12-20 | 2022-08-08 | Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук | Method for ion-plasma treatment of large-scale substrates |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040182516A1 (en) * | 2003-02-14 | 2004-09-23 | Applied Materials, Inc. | Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor |
| US20080277063A1 (en) * | 2007-05-10 | 2008-11-13 | Tae Ho Shin | Apparatus for treating substrate using plasma |
| CN103168506A (en) * | 2010-10-22 | 2013-06-19 | 应用材料公司 | Apparatus for forming a magnetic field and methods of use thereof |
| CN103219215A (en) * | 2012-01-20 | 2013-07-24 | 台湾积体电路制造股份有限公司 | Novel coherent multiple side electromagnets |
| CN103854945A (en) * | 2012-12-05 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma equipment and reaction chamber thereof |
-
2014
- 2014-10-29 CN CN201410593283.5A patent/CN105603370A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040182516A1 (en) * | 2003-02-14 | 2004-09-23 | Applied Materials, Inc. | Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor |
| US20080277063A1 (en) * | 2007-05-10 | 2008-11-13 | Tae Ho Shin | Apparatus for treating substrate using plasma |
| CN103168506A (en) * | 2010-10-22 | 2013-06-19 | 应用材料公司 | Apparatus for forming a magnetic field and methods of use thereof |
| CN103219215A (en) * | 2012-01-20 | 2013-07-24 | 台湾积体电路制造股份有限公司 | Novel coherent multiple side electromagnets |
| CN103854945A (en) * | 2012-12-05 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma equipment and reaction chamber thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172396A (en) * | 2016-12-07 | 2018-06-15 | 北京北方华创微电子装备有限公司 | Thin magnetic film deposition chambers and film deposition equipment |
| CN108172396B (en) * | 2016-12-07 | 2021-11-16 | 北京北方华创微电子装备有限公司 | Magnetic thin film deposition chamber and thin film deposition equipment |
| CN111411338A (en) * | 2020-04-07 | 2020-07-14 | 北京北方华创微电子装备有限公司 | Magnetic force piece structure in semiconductor equipment and semiconductor magnetron sputtering equipment |
| CN113416938A (en) * | 2021-08-25 | 2021-09-21 | 陛通半导体设备(苏州)有限公司 | Sputtering equipment and method capable of adjusting film stress |
| CN113416938B (en) * | 2021-08-25 | 2021-11-09 | 陛通半导体设备(苏州)有限公司 | Sputtering equipment and method capable of adjusting film stress |
| RU2777653C1 (en) * | 2021-12-20 | 2022-08-08 | Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук | Method for ion-plasma treatment of large-scale substrates |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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