CN105482115B - 一种高绝缘高强度聚酰亚胺黑膜的制备方法 - Google Patents
一种高绝缘高强度聚酰亚胺黑膜的制备方法 Download PDFInfo
- Publication number
- CN105482115B CN105482115B CN201510918573.7A CN201510918573A CN105482115B CN 105482115 B CN105482115 B CN 105482115B CN 201510918573 A CN201510918573 A CN 201510918573A CN 105482115 B CN105482115 B CN 105482115B
- Authority
- CN
- China
- Prior art keywords
- black
- preparation
- dianhydride
- polyamic acid
- strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
- C08K2003/3045—Sulfates
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Paints Or Removers (AREA)
Abstract
本发明公开了一种高绝缘高强度聚酰亚胺黑膜的制备方法,包括采用由均苯四甲酸二酐、3,3',4,4'‑二苯酮四酸二酐以及三苯二醚二酐组成的二酐混合物与二胺共聚来制备聚酰胺酸溶液,同时由黑色填料、消光剂、偶联剂组成的添加剂来制备黑色颜料浆料,最后将黑色颜料浆料加入聚酰胺酸溶液中,其中由黑色填料、消光剂、偶联剂组成的添加剂与聚酰胺酸的重量比为0.5%‑5%,然后加入溶剂调节控制最后反应生成物的粘度达到90000±5000 cP,然后脱泡流延成膜即可。本发明所得到的高绝缘强度聚酰亚胺黑膜具有高绝缘度和良好的机械性能,特别是具有良好的韧性,耐弯折。
Description
技术领域
本发明涉及一种聚酰亚胺薄膜的制备方法,特别是一种高绝缘高强度聚酰亚胺黑膜的制备方法。
背景技术
聚酰亚胺薄膜(PI膜)自上世纪60年代投入应用以来,以其优异的热性能,介电性能和机械性能等使其成为电子和航天等工业领域的首选材料。随着电子产业的发展,对聚酰亚胺特性要求越来越高,其中黑色聚酰亚胺薄膜可以用于一些对光敏感的场合,例如黑色耐高温胶带、黑色耐高温标签、黑色覆盖膜、模组绑扎、智慧手机等领域得到广泛应用。
就黑色聚酰亚胺膜的制备技术来说,常用的有两种途径:即于聚合物薄膜上漆上或涂布黑色颜料,或将黑色颜料分散于该聚合物前驱物溶液中并将该溶液固化。然而,第一种方法黑色颜料涂敷完后着色差,附着力差,容易脱落,不太稳定,同时涂敷层树脂不耐高温;如中国专利201110451368.6采用黑色亚光油墨层来制备黑色聚酰亚胺薄膜,但是其黑色亚光油墨是以丙烯酸油墨树脂为基体,必然影响其高温稳定性;第二种方法黑色颜料通常系以碳为主,例如碳黑、纳米碳管及石墨,而添加以碳为主的填料具有一定的导电性,导致聚酰亚胺膜存在电绝缘性、电可靠性差这样的问题,同时黑色颜料这些无机物的添加也将大幅影响聚合物薄膜的力学性质,特别是韧性下降较大,导致薄膜多次弯折后易断裂等问题。如中国专利200710041510.3(CN101074291)公开了一种黑色聚酰亚胺薄膜制造方法的发明,采用10-20%的碳黑为原料,该发明黑色聚酰亚胺薄膜的伸长率只有18-20%,拉伸强度为140MPa,绝缘强度为20-30MV/m。随后中国专利200910053045.4(CN101579904)公开了采用碳黑、消光剂为原料,制备的黑色亚光聚酰亚胺薄膜的延伸率提高到40-45%,拉伸强度151MPa,绝缘强度也提高到82KV/mm,可见光透过率≤1%,吸光率92%。更进一步中国专利201280066713.7(CN104169330)公开了采用3-7.5%的炭黑、0.5-1.5%的屏蔽剂来制备的黑色聚酰亚胺薄膜,其断裂生成率可以达到95-106%,其绝缘强度可以达到95-110KV/mm,但是其机械性能(特别是断裂伸长率)和绝缘强度有待进一步提高。
发明内容
本发明的目的是为了解决上述现有技术的不足而提供一种断裂伸长率好且绝缘度高的高绝缘高强度聚酰亚胺黑膜的制备方法。
为了实现上述目的,本发明所设计的高绝缘高强度聚酰亚胺黑膜的制备方法,包括如下步骤:
(1)将二胺放入反应釜中,并用溶剂溶解,然后再往反应釜中加入等摩尔总量的由均苯四甲酸二酐(PMDA)、3,3',4,4'-二苯酮四酸二酐(BTDA)和三苯二醚二酐(HQDPA)组成的二酐混合物,搅拌后制备成聚酰胺酸溶液,其中上述二酐混合物中按摩尔比计的配比分别是60%-80%的均苯四甲酸二酐、10%-20%的3,3',4,4'-二苯酮四酸二酐以及10%-20%的三苯二醚二酐,其结构式分别为:
(2)将由黑色填料、消光剂、偶联剂组成的添加剂加入到溶剂中,充分搅拌制备成黑色颜料浆料,其中偶联剂占添加剂重量比的0.2%-2%,消光剂占添加剂重量比的10%-20%;
(3)将黑色颜料浆料加入上述制备的聚酰胺酸溶液的反应釜中,其中由黑色填料、消光剂、偶联剂组成的添加剂与聚酰胺酸的重量比为0.5%-5%;然后加入溶剂调节控制最后反应生成物的粘度达到90000±5000cP,然后脱泡流延成膜即可。
所述溶剂是二甲基乙酰胺、N-甲基吡咯烷酮、二甲基甲酰胺中的一种或几种。所述二胺为4,4-二氨基二苯醚、对苯二胺、4,4-二氨基二苯基甲烷中的一种或几种。
所述黑色填料为炭黑、氧化钛或碳纤维粉中的一种或几种。其中炭黑采用不导电的炭黑,并通过其在浓硫酸回流2小时,使其表面改性接枝上-COOH,提高炭黑和聚酰胺酸的亲和力。
所述偶联剂为硅烷偶联剂,是γ-氨丙基三乙氧基硅烷、γ-(2,3环氧丙氧)丙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、N-β-(氨乙基)-γ-氨丙基三甲氧基硅烷、N-β(氨乙基)-γ-氨丙基二甲氧基硅烷或乙烯基三甲氧基硅烷中的一种或几种。
所述消光剂是硫酸钡(BaSO4)、氧化铝(Al2O3)、二氧化硅(SiO2)中的一种或几种。
按本发明的制备方法得到的高绝缘强度聚酰亚胺黑膜,具有良好的机械性能,其中断裂伸长率120-150%,绝缘强度150-200MV/m。其优点是采用共聚的办法,来提升薄膜在力学性能等方面的不足,在均苯四甲酸二酐提供高耐温性的基础上,添加3,3',4,4'-二苯酮四酸二酐来提高其和添加剂的结合力,添加三苯二醚二酐来改善薄膜的力学性能,特别是薄膜的韧性,提高其断裂伸长率。添加剂中的炭黑采用不导电的炭黑,同时用酸处理后提高氧含量,并使用硅烷偶联剂从而提高其和聚酰亚胺的结合力,同时添加不导电的非碳黑色料如氧化钛来提高提高其绝缘强度,达到良好的综合性能。
具体实施方式
下面结合实施例对本发明进一步说明。
实施例1:
本实施例所提供的一种高绝缘高强度聚酰亚胺黑膜的制备方法,具体步骤如下:
(1)将4,4-二氨基二苯醚(1mol,200.2g)放入反应釜中,并用二甲基乙酰胺溶解,然后再加入二酐均苯四甲酸二酐(PMDA,0.8mol,174.5g)、3,3',4,4'-二苯酮四酸二酐(BTDA,0.1mol,32.2g)、三苯二醚二酐(HQDPA,0.1mol,40.2g)的混合物到反应釜中,搅拌,制备成所需的聚酰胺酸溶液;
(2)将处理后的炭黑(110.0g),硫酸钡(15.0g),γ-氨丙基三乙氧基硅烷(1.0g)加入到二甲基乙酰中,充分搅拌制备成黑色颜料浆料;
(3)将黑色颜料浆料加入上述制备的聚酰胺酸溶液的反应釜中,然后加入二甲基乙酰调节控制最后反应生成物的粘度达到90000±5000cP范围内,然后脱泡流延成膜即可。
本实施例所得的高绝缘强度聚酰亚胺黑膜的拉伸强度为170MPa,断裂伸长率130%,绝缘强度160MV/m。
实施例2:
本实施例所提供的一种高绝缘高强度聚酰亚胺黑膜的制备方法,具体步骤如下:
(1)将4,4-二氨基二苯醚(1mol,200.2g)放入反应釜中,并用二甲基乙酰胺溶解,然后再加入二酐均苯四甲酸二酐(PMDA,0.7mol,152.7g)、3,3',4,4'-二苯酮四酸二酐(BTDA,0.1mol,32.2g)、三苯二醚二酐(HQDPA,0.2mol,80.5g)的混合物到反应釜中,搅拌,制备成所需的聚酰胺酸溶液;
(2)将处理后的炭黑(110.0g),硫酸钡(15.0g),γ-氨丙基三乙氧基硅烷(1.0g)加入到二甲基乙酰中,充分搅拌制备成黑色颜料浆料;
(3)将黑色颜料浆料加入上述制备的聚酰胺酸溶液的反应釜中,然后加入二甲基乙酰调节控制最后反应生成物的粘度达到90000±5000cP范围内,然后脱泡流延成膜即可。
本实施例所得的高绝缘强度聚酰亚胺黑膜的拉伸强度为165MPa,断裂伸长率147%,绝缘强度167MV/m。
实施例3:
本实施例所提供的一种高绝缘高强度聚酰亚胺黑膜的制备方法,具体步骤如下:
(1)将4,4-二氨基二苯醚(1mol,200.2g)放入反应釜中,并用二甲基乙酰胺溶解,然后再加入二酐均苯四甲酸二酐(PMDA,0.7mol,152.7g)、3,3',4,4'-二苯酮四酸二酐(BTDA,0.15mol,48.3g)、三苯二醚二酐(HQDPA,0.15mol,60.3g)的混合物到反应釜中,搅拌,制备成所需的聚酰胺酸溶液;
(2)将处理后的炭黑(60.0g),氧化钛(50.0g),二氧化硅(15.0g),γ-氨丙基三乙氧基硅烷(1.0g)加入到二甲基乙酰中,充分搅拌制备成黑色颜料浆料;
(3)将黑色颜料浆料加入上述制备的聚酰胺酸溶液的反应釜中,然后加入二甲基乙酰调节控制最后反应生成物的粘度达到90000±5000cP范围内,然后脱泡流延成膜即可。
本实施例所得的高绝缘强度聚酰亚胺黑膜的拉伸强度为160MPa,断裂伸长率140%,绝缘强度190MV/m。
Claims (6)
1.一种高绝缘高强度聚酰亚胺黑膜的制备方法,包括如下步骤:
(1)将二胺放入反应釜中,并用溶剂溶解,然后再往反应釜中加入等摩尔总量的由均苯四甲酸二酐、3,3',4,4'-二苯酮四酸二酐以及三苯二醚二酐组成的二酐混合物,搅拌后制备成聚酰胺酸溶液,其中上述二酐混合物中按摩尔比计的配比分别是60%-80%的均苯四甲酸二酐、10%-20%的3,3',4,4'-二苯酮四酸二酐以及10%-20%的三苯二醚二酐;
(2)将由黑色填料、消光剂、偶联剂组成的添加剂加入到溶剂中,充分搅拌制备成黑色颜料浆料,其中偶联剂占添加剂重量比的0.2%-2%,消光剂占添加剂重量比的10%-20%;
(3)将黑色颜料浆料加入上述制备的聚酰胺酸溶液的反应釜中,其中由黑色填料、消光剂、偶联剂组成的添加剂与聚酰胺酸的重量比为0.5%-5%;然后加入溶剂调节控制最后反应生成物的粘度达到90000±5000 cP,然后脱泡流延成膜即可。
2.根据权利要求1所述高绝缘高强度聚酰亚胺黑膜的制备方法,其特征是所述溶剂是二甲基乙酰胺、N-甲基吡咯烷酮、二甲基甲酰胺中的一种或几种。
3.根据权利要求1所述高绝缘高强度聚酰亚胺黑膜的制备方法,其特征是所述二胺为4,4-二氨基二苯醚、对苯二胺、4,4-二氨基二苯基甲烷中的一种或几种。
4.根据权利要求1 所述高绝缘高强度聚酰亚胺黑膜的制备方法,其特征是所述黑色填料为炭黑或碳纤维粉中的一种或几种。
5.根据权利要求1 所述高绝缘高强度聚酰亚胺黑膜的制备方法,其特征是所述偶联剂为硅烷偶联剂,是γ-氨丙基三乙氧基硅烷、γ-(2,3 环氧丙氧)丙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、N-β-(氨乙基)-γ-氨丙基三甲氧基硅烷、N-β(氨乙基)-γ- 氨丙基二甲氧基硅烷或乙烯基三甲氧基硅烷中的一种或几种。
6.根据权利要求1 所述高绝缘高强度聚酰亚胺黑膜的制备方法,其特征是所述消光剂是硫酸钡、氧化铝、二氧化硅中的一种或几种。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510918573.7A CN105482115B (zh) | 2015-12-11 | 2015-12-11 | 一种高绝缘高强度聚酰亚胺黑膜的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510918573.7A CN105482115B (zh) | 2015-12-11 | 2015-12-11 | 一种高绝缘高强度聚酰亚胺黑膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105482115A CN105482115A (zh) | 2016-04-13 |
CN105482115B true CN105482115B (zh) | 2017-11-24 |
Family
ID=55669409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510918573.7A Active CN105482115B (zh) | 2015-12-11 | 2015-12-11 | 一种高绝缘高强度聚酰亚胺黑膜的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105482115B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107474269A (zh) * | 2017-08-02 | 2017-12-15 | 桂林电器科学研究院有限公司 | 一种黑色亚光聚酰亚胺薄膜及其制备方法 |
CN107226921A (zh) * | 2017-08-02 | 2017-10-03 | 桂林电器科学研究院有限公司 | 一种多层黑色聚酰亚胺薄膜及其制备方法 |
CN107312191A (zh) * | 2017-08-02 | 2017-11-03 | 桂林电器科学研究院有限公司 | 一种多层黑色亚光聚酰亚胺薄膜及其制备方法 |
CN107400250A (zh) * | 2017-08-02 | 2017-11-28 | 桂林电器科学研究院有限公司 | 一种黑色聚酰亚胺薄膜及其制备方法 |
CN109628005B (zh) * | 2018-11-20 | 2019-10-18 | 深圳市弘海电子材料技术有限公司 | 无线充电用超薄黑色覆盖膜及其制备方法 |
CN109437905B (zh) * | 2018-11-27 | 2021-08-17 | 宁波今山新材料有限公司 | 一种耐撕裂石墨膜的制备方法 |
CN111514660A (zh) * | 2020-05-06 | 2020-08-11 | 蚌埠泰鑫材料技术有限公司 | 氨基化氧化钛改性聚酰亚胺纤维过滤材料及其制备方法 |
CN111574426B (zh) * | 2020-05-27 | 2023-06-23 | 湘潭大学 | 一种含异靛蓝结构的二胺单体及其合成的黑色聚酰亚胺 |
CN111909406A (zh) * | 2020-07-24 | 2020-11-10 | 安徽国风塑业股份有限公司 | 一种高绝缘哑光黑色聚酰亚胺薄膜的制备方法 |
CN112111077A (zh) * | 2020-08-25 | 2020-12-22 | 安徽国风塑业股份有限公司 | 一种高绝缘强度高黑度聚酰亚胺黑膜及其制备方法 |
CN113402746A (zh) * | 2021-05-31 | 2021-09-17 | 安徽国风塑业股份有限公司 | 一种哑光绝缘聚酰亚胺黑膜及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102786704B (zh) * | 2012-08-06 | 2015-02-18 | 江苏南方贝昇光电材料有限公司 | 一种黑色聚酰亚胺薄膜的制备方法 |
US20140227501A1 (en) * | 2013-02-14 | 2014-08-14 | E I Du Pont De Nemours And Company | Matte finish polyimide films and methods relating thereto |
TWI481649B (zh) * | 2013-09-09 | 2015-04-21 | Taimide Technology Inc | 黑色聚醯亞胺膜及其加工方法 |
CN103642068B (zh) * | 2013-11-25 | 2015-04-15 | 桂林电器科学研究院有限公司 | 一种抗静电浆料 |
-
2015
- 2015-12-11 CN CN201510918573.7A patent/CN105482115B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN105482115A (zh) | 2016-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105482115B (zh) | 一种高绝缘高强度聚酰亚胺黑膜的制备方法 | |
CN106589374B (zh) | 一种聚酰亚胺薄膜的制备方法及由该方法制备得到的聚酰亚胺薄膜 | |
CN100441652C (zh) | 一种含酚羟基聚酰亚胺粘合剂的制备方法 | |
JP7450488B2 (ja) | ポリアミック酸樹脂、ポリイミド樹脂およびこれらを含む樹脂組成物 | |
CN101407590B (zh) | 一种高模量、低热膨胀系数聚酰亚胺杂化薄膜的制备方法 | |
CN105038226B (zh) | 一种非均质白色聚酰亚胺功能薄膜及其制备方法 | |
CN106832277B (zh) | 一种具有高延伸率的白色聚酰亚胺薄膜及其制备方法 | |
CN116162407B (zh) | 一种耐高压、耐电晕聚酰亚胺绝缘漆材料及其制备方法 | |
CN112375221B (zh) | 一种低介电性聚酰亚胺复合薄膜及其制备方法 | |
CN102260480A (zh) | 一种耐高温改性环氧树脂胶粘剂及其制备方法 | |
CN105330878A (zh) | 一种含有氟树脂的改性聚酰亚胺薄膜的制备方法 | |
CN105111476A (zh) | 聚酰亚胺薄膜的制备方法 | |
CN112457492B (zh) | 低热膨胀系数热塑性聚酰亚胺、薄膜、模塑粉及制备方法 | |
CN103483608B (zh) | 低热膨胀系数有机硅改性PI/SiO2杂化薄膜的制备方法 | |
JP6461470B2 (ja) | ポリイミド前駆体組成物、ポリイミドの製造方法、ポリイミド、ポリイミドフィルム、及び基板 | |
CN112409612B (zh) | 一种高固含量低粘度聚酰胺酸溶液的制备方法 | |
CN104558605A (zh) | 一种透明聚酰亚胺薄膜及其制备方法 | |
CN108587163B (zh) | 一种高透明低膨胀聚酰亚胺薄膜及其制备方法与应用 | |
TWI286148B (en) | Novel polyimide resin and its preparation method | |
CN112480405B (zh) | 本征型低介质损耗因数聚酰亚胺薄膜及其制备方法 | |
CN112574411A (zh) | 聚酰亚胺前体、聚酰亚胺薄膜及其制备方法以及显示装置 | |
CN111704798A (zh) | 一种耐高温聚酰亚胺薄膜及其制备方法 | |
CN115505279B (zh) | 一种lcp单面覆铜板及其制备方法 | |
CN116715852A (zh) | 聚酰亚胺及其制备方法、组合物 | |
CN106905527A (zh) | 低cte、高粘结性的新型双向拉伸聚酰亚胺薄膜的生产工艺 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230207 Address after: 315176 88 Kesheng Road, jishigang Town, Haishu District, Ningbo City, Zhejiang Province Patentee after: NINGBO JINSHAN NEW MATERIAL Co.,Ltd. Address before: 315217 plant 4, qianqianchen Industrial Park, Yunlong Town, Yinzhou District, Ningbo City, Zhejiang Province (Ningbo Jinshan Electronic Materials Co., Ltd.) Patentee before: NINGBO CEN ELECTRONIC MATERIAL CO.,LTD. |