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CN105489167A - Display device as well as pixel circuit and driving method thereof - Google Patents

Display device as well as pixel circuit and driving method thereof Download PDF

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Publication number
CN105489167A
CN105489167A CN201510890674.8A CN201510890674A CN105489167A CN 105489167 A CN105489167 A CN 105489167A CN 201510890674 A CN201510890674 A CN 201510890674A CN 105489167 A CN105489167 A CN 105489167A
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transistor
voltage
driving transistors
image element
element circuit
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CN105489167B (en
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张盛东
王翠翠
林兴武
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Peking University Shenzhen Graduate School
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Peking University Shenzhen Graduate School
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Abstract

The application relates to a display device as well as a pixel circuit and a driving method thereof. The pixel circuit comprises a driving transistor, a light emitting element, a driving control transistor, a data writing transistor and a storage capacitor, wherein the driving transistor is used for driving the light emitting element to emit light; the data writing transistor is used for providing the voltage of a data signal when the scanning signal of a scanning signal line is effective; the driving control transistor is used for completing threshold and migration rate compensation in response to a light emitting control signal, and for writing the provided voltage of the data signal into the driving transistor; and the storage capacitor is used for providing the threshold voltage of the driving transistor when performing threshold compensation. The application, through mutual cooperation between the various transistors and the storage capacitor, can complete threshold and migration rate compensation, so that the problem of uneven display of a display panel due to the different threshold voltages of the driving transistors on various parts is solved; and the problem that display uniformity drops due to change in the migration rate of the driving tube can be compensated, so that the display uniformity is further improved.

Description

Display device and image element circuit thereof and driving method
Technical field
The application relates to display device technical field, is specifically related to a kind of display device and image element circuit thereof and driving method.
Background technology
Organic Light Emitting Diode (OrganicLight-EmittingDiode, OLED) display is because having the advantages such as high brightness, high-luminous-efficiency, wide viewing angle and low-power consumption, extensively studied by people in recent years, and be applied to rapidly in the middle of the display of a new generation.The type of drive of OLED display can be divided into passive waked-up (PassiveMatrixOLED, PMOLED) and driven with active matrix (ActiveMatrixOLED, AMOLED) two kinds.Research shows, although passive waked-up is with low cost, there is cross-talk phenomenon, can not realize high-resolution display, and passive waked-up electric current is large, reduces the serviceable life of OLED.By contrast, driven with active matrix mode arranges the different transistor of number on each pixel as current source, avoid cross-talk, required drive current is less, power consumption is lower, the life-span of OLED is increased, can realize high-resolution display, meanwhile, driven with active matrix more easily meets the needs of large area and high grade grey level display.
The image element circuit of tradition AMOLED is simple two Thin Film Transistor (TFT) (ThinFilmTransistor, TFT) structure, although this circuit structure is simple, but can not compensation for drive transistor T1 and OLED threshold voltage shift, or cause the threshold voltage unevenness of panel TFT device everywhere because TFT device adopts polycrystalline material to make, the mobility change of driving tube T1 can not be compensated.When there is drift in driving transistors T1 threshold voltage and mobility or value is everywhere inconsistent on panel, changing appears in drive current IDS (between the Drain-Source of T1 electric current), and pixels different on panel makes OLED threshold voltage generation drift in various degree because of the difference of bias voltage, thus causes the unevenness of Display panel.
Summary of the invention
The application provides a kind of image element circuit and driving method and display device thereof, and with the uneven or threshold voltage shift of the threshold voltage of compensation for drive transistor and luminescent device, and the threshold voltage improving driving transistors is uneven.
According to first aspect, there is provided a kind of image element circuit in a kind of embodiment of the application, comprising: driving transistors, light-emitting component, drive control transistor, data write transistor and memory capacitance, wherein, described driving transistors connects described light-emitting component, for driving described light-emitting component luminous; Described data write transistor connection data signal wire, signal scanning line, described drive control transistor and described memory capacitance respectively, for when the sweep signal of described scan signal line is effective, respond the data-signal of described data signal line to provide the voltage of described data-signal; Described drive control transistor connects LED control signal line, described driving transistors and described data write transistor respectively, for responding described LED control signal, complete the compensation of threshold value and mobility, and the voltage of the described data-signal provided by described data write transistor writes described driving transistors; Described memory capacitance also connects described light-emitting component, for the threshold voltage for providing described driving transistors when described drive control transistor carries out valve value compensation.
According to second aspect, a kind of pixel circuit drive method is provided in a kind of embodiment of the application, be applied to image element circuit as above, each drive cycle of image element circuit comprises initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase, driving method comprises: at described initial phase, make described drive control transistor conducting, the voltage of one end of the described driving transistors of connection of memory capacitance described in initialization and described light-emitting component; In the described valve value compensation stage, described drive control transistor keeps conducting, so that for described driving transistors provides reference voltage, to described driving transistors charging until described driving transistors turns off, extract the threshold voltage of described driving transistors and be stored in described memory capacitance; In described data write phase, described drive control transistor is turned off, described data are made to write transistor turns, the voltage of one end of the described driving transistors of the connection of described light-emitting component is refreshed, and described memory capacitance stores the voltage difference between the voltage of one end of the voltage of described data write transistor output and the described driving transistors of connection of described light-emitting component; At described mobility compensated stage, described data write transistor keeps conducting, make described drive control transistor conducting, described driving transistors conducting, the voltage of one end of the described driving transistors of connection of described light-emitting component, through described driving transistors lifting, makes the two ends of described memory capacitance form the reference voltage of luminescence process; In described glow phase, make described data write transistor and turn off, described drive control transistor keeps conducting, the glow current required for described driving transistors produces according to the voltage difference at described memory capacitance two ends, and drives described light-emitting component luminous
According to the third aspect, provide a kind of display device in a kind of embodiment of the application, comprising: image element circuit matrix, described image element circuit matrix comprises the image element circuit as above being arranged in N capable M column matrix, N and M is positive integer; Gate driver circuit, for generation of sweep signal, and provides required control signal by image element circuit described in each line scan signals alignment of being formed along first direction; Data drive circuit, for generation of the data-signal representing half-tone information, and provides data-signal by image element circuit described in each data-signal alignment of being formed along second direction; Controller, for providing Control timing sequence respectively to described gate driver circuit and described data drive circuit.
The embodiment of the present application is cooperatively interacted by driving transistors, drive control transistor, data write transistor and memory capacitance, complete the compensation of threshold value and mobility, then by data-signal write driver transistor, drive light-emitting component luminous by driving transistors, thus solve the display panel different and display problem of non-uniform that causes of drive transistor threshold voltage everywhere, the display uniformity coefficient reduction problem that driving tube mobility change causes can be compensated, further increase the uniformity coefficient of display.
Accompanying drawing explanation
Fig. 1 is a kind of image element circuit structure figure disclosed in the embodiment of the present application one;
The driver' s timing figure that Fig. 2 is image element circuit shown in Fig. 1;
Fig. 3 is a kind of image element circuit structure figure disclosed in the embodiment of the present application two;
A kind of driver' s timing figure that Fig. 4 a is image element circuit shown in Fig. 3;
The another kind of driver' s timing figure that Fig. 4 b is image element circuit shown in Fig. 3;
Fig. 5 is a kind of image element circuit structure figure disclosed in the embodiment of the present application three;
The driver' s timing figure that Fig. 6 is image element circuit shown in Fig. 5;
Fig. 7 a is a kind of image element circuit structure figure disclosed in the embodiment of the present application four;
Fig. 7 b is another kind of image element circuit structure figure disclosed in the embodiment of the present application four;
Fig. 7 c is disclosed another image element circuit structure figure of the embodiment of the present application four;
Fig. 8 is the driver' s timing figure of image element circuit shown in Fig. 7 a;
Fig. 9 is a kind of image element circuit structure figure disclosed in the embodiment of the present application five;
A kind of driver' s timing figure that Figure 10 a is image element circuit shown in Fig. 9;
The another kind of driver' s timing figure that Figure 10 b is image element circuit shown in Fig. 9;
Figure 11 is a kind of image element circuit structure figure disclosed in the embodiment of the present application six;
The driver' s timing figure that Figure 12 is image element circuit shown in Figure 11;
Figure 13 is a kind of image element circuit structure figure disclosed in the embodiment of the present application seven;
The driver' s timing figure that Figure 14 is image element circuit shown in Figure 12;
Figure 15 is a kind of display device structure principle schematic disclosed in the application one embodiment.
Embodiment
By reference to the accompanying drawings the application is described in further detail below by embodiment.Wherein identical label represents identical element.
First some terms are described.Transistor in each embodiment of the application can be the transistor of any structure, such as bipolar transistor (BJT) or field effect transistor (FET).When transistor is bipolar transistor, it controls the base stage that pole refers to bipolar transistor, first can be extremely collector or the emitter of bipolar transistor, second of correspondence can be extremely emitter or the collector of bipolar transistor, in actual application, " emitter " and " collector " can flow to and exchange by basis signal.When transistor is field effect transistor, it controls the grid that pole refers to field effect transistor, first can be extremely drain electrode or the source electrode of field effect transistor, second of correspondence can be extremely source electrode or the drain electrode of field effect transistor, in actual application, " source electrode " and " drain electrode " can flow to and exchange by basis signal.Transistor in display device is generally thin film transistor (TFT) (TFT), is a kind of field effect transistor.For TFT, the application is described in detail below.
Light-emitting component in the application one embodiment is Organic Light Emitting Diode (OrganicLight-EmittingDiode, OLED), but is not limited to this, in other embodiments, also can be the light-emitting component of other type.One end (being called first end) of light-emitting component is anode, and correspondingly, the other end (being called the second end) is negative electrode.
First level end and second electrical level end are the two ends of the power supply provided for image element circuit work.In one embodiment, the first level end can be high level end V dD, second electrical level end is low level end V sSor ground wire, in other embodiments, also can replace adaptively.It should be noted that: for image element circuit, the first level end (such as high level end V dD) and second electrical level end (such as low level end V sS) part of not the application's image element circuit, in order to the technical scheme making those skilled in the art understand the application better, and introduce the first level end especially and second electrical level end is described.
It should be noted that, for convenience, also the technical scheme in order to make those skilled in the art more clearly understand the application, introduces first node A in present specification and Section Point B identifies circuit structure relevant portion, can not regard as the extra terminal introduced in circuit.In addition, for convenience of description, high level adopts V hcharacterize, low level adopts V lcharacterize.
Transistor in the embodiment of the present application is described for N-type TFT, should be understood that the thought provided according to the application also can adopt the image element circuit accordingly based on P type or N-type and P type.
As shown in figure 15, the application one embodiment provides a kind of display device, and it comprises: display panel 100, gate driver circuit 200, data drive circuit 300 and controller 400.
Display panel 100 comprise be arranged in n capable m column matrix multiple image element circuit Pixel [1] [1] ..., Pixel [n] [m], the first direction that is connected with each image element circuit (such as laterally) multi-strip scanning line Gate [1] ..., Gate [n], and the second direction be connected with each pixel (such as longitudinally) a plurality of data lines Data [1] ..., Data [m].Wherein, n and m be greater than 0 integer; Pixel [n] [m] characterizes the image element circuit of n-th line m row, in this embodiment, and the image element circuit that image element circuit adopts another embodiment of the application to provide; Gate [n] represents provides sweep signal for the image element circuit to corresponding line by the sweep trace that n-th line image element circuit is corresponding; Data [m] represents provides data voltage for the image element circuit to respective column by the data line that m row image element circuit is corresponding.Display panel 100 can be display panels, organic electroluminescence display panel, electronic paper display panel etc., and the display device of correspondence can be liquid crystal display, organic light emitting display, electric paper display etc.
Gate driver circuit 200 is for generation of scanning pulse signal, and by along first direction formed each horizontal scanning line Gate [1] ..., Gate [n], required control signal is provided, to complete lining by line scan to picture element matrix to corresponding image element circuit.
The signal output part of data drive circuit 300 be coupled to corresponding with it in display panel 100 data line Data [1] ..., on Data [m], the data voltage signal V that data drive circuit 300 produces dATAby data line Data [1] ... Data [m] is transferred in corresponding pixel cell to realize gradation of image.
Controller 400 for providing Control timing sequence respectively to gate driver circuit 200 and data drive circuit 300, to control the sequential of whole display device action.Diagram middle controller 400 is separated with gate driver circuit 200 and data drive circuit 300, but in other embodiments, controller 400 also can be integrated in gate driver circuit 200 and data drive circuit 300 respectively.
The image element circuit involved by the application is described in detail below by way of multiple embodiment.
Embodiment one:
Please refer to Fig. 1, a kind of image element circuit structure figure disclosed in the present embodiment, comprising: be connected on the first level end V dDand driving transistors T1 between second electrical level end GND and light-emitting component OLED, and drive control transistor (describes for ease of combining diagram, also transistor seconds is called) T2, data write transistor (describing for ease of combining diagram, being also called third transistor) T3 and memory capacitance C1.
First pole of driving transistors T1 is coupled to the first level end V dD, second pole of driving transistors T1 is coupled to the first end of light-emitting component OLED (the two is connected part herein and be called Section Point B), and second end of light-emitting component OLED is coupled to second electrical level end GND.In one embodiment, please refer to Fig. 1, the first end of light-emitting component OLED is anode, and second end of light-emitting component OLED is negative electrode.
The control pole of driving transistors T1 is coupled to second electrode of transistor seconds T2, first electrode coupling of transistor seconds T2 is to second electrode (the two is connected part herein and be called first node A) of third transistor T3, the control pole of transistor seconds T2 is coupled to LED control signal line, for responding LED control signal V eM.
First electrode coupling of third transistor T3 is to data signal line, and second electrode coupling of third transistor T3 is to first electrode of transistor seconds T2, and the control pole of third transistor T3 is coupled to scan signal line, for responding scanning signal V sCAN.In a particular embodiment, data signal line is used for providing data-signal V dATAwith reference voltage V rEF, in other embodiments, data signal line can also be used for providing initialization voltage.
Memory capacitance C1 is coupled between first node A and Section Point B.
In the present embodiment, the drive signal waveform figure of image element circuit as shown in Figure 2, and in this image element circuit course of work, a frame time T (frame period) can be divided into double teacher: initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase.
(1) initial phase
At initial phase, LED control signal V eMwith sweep signal V sCANfor high level V h, transistor seconds T2 and third transistor T3 responds LED control signal V respectively eMwith sweep signal V sCANand conducting, the voltage that data signal line provides is reference voltage V rEF, the control pole of first node A and driving transistors T1 is initialised to reference voltage V by transistor T3 and T2 of conducting rEF, meanwhile, driving transistors T1 is in conducting state, the first level end V dDthe voltage provided is an initialization low level signal V dDL, the voltage of Section Point B is discharged to V by driving transistors T1 dDL.Thus, complete and the voltage initialization of first node A and Section Point B is operated.
(2) in the valve value compensation stage
LED control signal V eMwith sweep signal V sCANremain high level V h, the voltage on data signal line remains reference voltage V rEF, therefore, the voltage of the control pole of first node A and driving transistors T1 remains V rEF; First level end V dDthe signal provided is by low level V dDLchange high level V into dDH, therefore, V dDHcharged until driving transistors T1 ends to Section Point B by the driving transistors T1 of conducting, now, the voltage of Section Point B is elevated to V rEF-V tH, wherein V tHfor the threshold voltage of driving transistors T1, thus the threshold voltage V of driving transistors T1 can be extracted tHinformation.In other words, after the valve value compensation stage terminates, the threshold voltage information of driving transistors T1 is stored in memory capacitance C1 two ends.In order to obtain high-contrast, now V rEF-V tHthe threshold voltage of light-emitting component OLED can be less than.
(3) data write phase
LED control signal V eMfor low level V l, transistor seconds T2 is at LED control signal V eMcut-off state is in, sweep signal V under control sCANfor high level V h, third transistor T3 responding scanning signal V sCANhigh level and conducting, and the data-signal provided on node A transmission of data signals line, the voltage data signal now data signal line provided is data voltage V dATA, this data voltage refreshes the voltage of first node A to V by the third transistor T3 of conducting dATA, the voltage of Section Point B at the voltage of first node A from V rEFbe charged to V dATAprocess in, by the intrinsic capacity C of memory capacitance C1 and light-emitting component OLED oLEDcoupling be coupled to V b i:
V B I = C 1 C 1 + C O L E D ( V D A T A - V R E F ) + V R E F - V T H - - - ( 1 )
Wherein, V b ifor the voltage of Section Point B, C1 and C oLEDthe capacitance of the intrinsic capacity of memory capacitance C1 and light-emitting component OLED respectively.Therefore, the voltage difference now between first node A and Section Point B is
V A - V B I = V D A T A - [ C 1 C 1 + C O L E D ( V D A T A - V R E F ) + V R E F - V T H ] = C O L E D C 1 + C O L E D ( V D A T A - V R E F ) + V T H - - - ( 2 )
(4) mobility compensated stage
LED control signal V eMfor from low level V lbe converted to high level V h, transistor seconds T2 is converted to conducting state from cut-off state, sweep signal V sCANremain high level V h, third transistor T3 is in conducting state, and the signal voltage that data signal line provides remains data voltage V dATA, therefore the voltage of first node A remains V dATA, the voltage of the control pole of driving transistors T1 is V dATA, thus driving transistors T1 conducting, and start to charge to Section Point B, make the voltage lifting Δ V of B point b, Δ V bcan be expressed as:
ΔV B = ∫ i ( t ) d t C 1 + C O L E D - - - ( 3 )
Wherein i (t) is the electric current in driving transistors T1 turn on process.The time Δ t compensated due to mobility is shorter, and the electric current flowing through driving transistors T1 can be regarded as constant electric current I oLED 0, this electric current is determined by the voltage difference at data write phase memory capacitance two ends, I oLED 0can be expressed as:
I O L E D 0 = 1 2 μC O X W L ( V A - V B I - V T H ) 2 = 1 2 μC O X W L [ C O L E D C 1 + C O L E D ( V D A T A - V R E F ) ] 2 - - - ( 4 )
Wherein, μ, C oXthe mobility of driving transistors T1, unit area gate oxide capacitance and breadth length ratio is respectively with W/L.Therefore, Δ V bcan be expressed as further:
ΔV B = ∫ i ( t ) d t C 1 + C O L E D ≈ I O L E D 0 · Δ t C 1 + C O L E D - - - ( 5 )
Wherein I oLED 0for as shown in formula (4), I can be found out oLED 0have nothing to do with the threshold voltage of driving transistors T1, relevant with the mobility of driving transistors T1, if the mobility of driving transistors T1 is large, then Δ V bincrease, otherwise, Δ V breduce.C1 two ends (namely between first node A and Section Point B) define the reference voltage in luminescence process, and this reference voltage is
V A - V B I - ΔV B = C O L E D C 1 + C O L E D ( V D A T A - V R E F ) + V T H - ΔV B - - - ( 6 )
Wherein, Δ V bas shown in formula (5), this reference voltage can maintain whole light period.
(5) glow phase
LED control signal V eMremain high level V h, transistor seconds T2 is in conducting state, sweep signal V sCANfor low level V l, third transistor T3 turns off (being namely in cut-off state), and first node A is hanged, and the reference voltage that mobility compensated stage is formed drives light-emitting component OLED to start luminescence, the voltage of Section Point B be raised to OLED luminous time voltage V oLED.Now, due to transistor seconds T2 conducting, the voltage of the control pole of driving transistors T1 equals the voltage of first node A, because first node A is unsettled, therefore, when the voltage lifting of B point, the voltage of A point also has corresponding lifting, thus make the voltage difference between first node A and Section Point B keep the reference voltage in formula (6) constant, because now driving transistors T1 is operated in saturation region, the electric current therefore flowing through OLED can be expressed as:
I O L E D = 1 2 μC O X W L ( V A - V B I - ΔV B - V T H ) 2 = 1 2 μC O X W L [ C O L E D C 1 + C O L E D ( V D A T A - V R E F ) - ΔV B ] 2 - - - ( 7 )
Due to Δ V bhave nothing to do with the threshold voltage of driving transistors T1, therefore, as can be seen from (7), the threshold voltage finally flowing through the electric current of light-emitting component OLED and the threshold voltage of driving transistors T1 and OLED itself is all irrelevant, thus the image element circuit of the present embodiment can the unevenness that causes of the change of the threshold voltage of compensation for drive transistor T1 and OLED well.
About the compensation to mobility, can know from formula (4) and (5), when mobility [mu] increases, Δ V bincrease, quadratic term in formula (7) reduces, and compensate for because of mobility that to increase the OLED ER effect caused large; In order to obtain the rational mobility make-up time, utilize | dI oLED/ d μ | 2< ε, ε be a certain very little amount (as, 0< ε <0.1), the suitable mobility make-up time can be obtained by solving an equation, this mobility make-up time utilizes LED control signal line and scan signal line to realize, and does not introduce unnecessary control signal wire.
Known by analyzing above, the advantage of the present embodiment is, circuit structure is relatively simple, only adopt three transistors and a memory capacitance, can pixel aperture ratio be increased, the current density of light-emitting component OLED can be reduced, provide possibility serviceable life as raising light-emitting component OLED; Image element circuit adopts rechargeable threshold value extracting mode, i.e. source follower structure, has compensating action for positive negative threshold value, in this way effective too for adopting the transistor of depletion type; What this image element circuit can also compensate that the mobility change of driving tube causes in addition is uneven.
Embodiment two:
The present embodiment and above-described embodiment one difference are, also comprise the first initialization transistor in image element circuit disclosed in the present embodiment (to describe for ease of combining diagram, also the 4th transistor is called) T4, in order to provide corresponding initialization voltage to Section Point B, and in embodiment one, the initialization voltage of Section Point B is by the first level end V dDthere is provided.Please refer to Fig. 3, a kind of image element circuit structure figure disclosed in the present embodiment.
Second electrode coupling of the 4th transistor T4 is to Section Point B, and first electrode of the 4th transistor T4 is used for input initialization voltage V r, the control pole of the 4th transistor T4 is coupled to initialization scan signal wire, for responding initialization scan signal V iNT.At initial phase, the 4th transistor T4 responds initialization scan signal V iNTand conducting, thus at initial phase, the initialization current potential of the first electrode input of the 4th transistor T4 is by V rthere is provided, the voltage of Section Point B is initialised to initialization low-voltage V by the 4th transistor T4 r.
In the present embodiment, the drive signal waveform figure of image element circuit as shown in figures 4 a and 4b, and in this image element circuit course of work, a frame time T (frame period) can be divided into double teacher: initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase.Be described in conjunction with drive waveforms Fig. 4 a for the present embodiment.
(1) initial phase
At initial phase, LED control signal V eMwith sweep signal V sCANfor high level V h, transistor seconds T2 and third transistor T3 responds LED control signal V respectively eMwith sweep signal V sCANand conducting, the voltage that data signal line provides is reference voltage V rEF, the control pole of first node A and driving transistors T1 is initialised to reference voltage V by transistor T3 and T2 of conducting rEF, meanwhile, initialization scan signal V iNTfor high level V h, the 4th transistor T4 is in conducting state, and the voltage of Section Point B is discharged to low-voltage V by the 4th transistor T4 r.Thus, complete the voltage initialization to first node A and Section Point B.
(2) in the valve value compensation stage
LED control signal V eMwith sweep signal V sCANremain high level V h, the voltage on data signal line DataLine remains reference voltage V rEF, therefore, the voltage of the control pole of first node A and driving transistors T1 remains V rEF; Initialization scan signal V iNTfrom high level V hbe converted to low level V l, the 4th transistor T4 turns off, the first level end V dDcharged until driving transistors cut-off to Section Point B by the driving transistors T1 of conducting, now, the voltage of Section Point B is elevated to V rEF-V tH, wherein V tHfor the threshold voltage of driving transistors T1.After the valve value compensation stage terminates, the threshold voltage information of driving transistors T1 is stored in memory capacitance C1 two ends.In order to obtain high-contrast, now V rEF-V tHthe threshold voltage of light-emitting component OLED can be less than.
Other stages are similar to the respective stage of embodiment one, repeat no more.
Adopt the pixel road of the present embodiment in conjunction with the analysis of drive waveforms Fig. 4 b and said process similar, difference is, initial phase first node A is unsettled, and the B point voltage that its voltage can be initialised drags down.
Known by analyzing above, except can compensating threshold voltage change and mobility change except, being also advantageous in that of the present embodiment, the first level end V dDfor constant high level power supply signal, it is no longer pulse signal.As the first level end V dDduring for constant voltage, sequential control more easily realizes.
Embodiment three:
Please refer to Fig. 5, image element circuit structure figure disclosed in the present embodiment, be with above-described embodiment two difference, the control pole of the 4th transistor T4 is coupled to previous stage scan signal line in same scanning frame (i.e. the scan signal line of lastrow image element circuit), and the sweep signal of the 4th transistor T4 response lastrow completes the initialization to Section Point B.
Please refer to Fig. 6, is the driver' s timing figure of image element circuit shown in Fig. 5, and the driving process of the present embodiment image element circuit and above-described embodiment one, embodiment two are substantially identical, and difference is, initial phase occurs in current line (n-th line) sweep signal V sCAN [n]before arrival, and the initialization of Section Point B is at the sweep signal V of lastrow sCAN [n-1]carry out time effective, now not to the initialization of A point, the B point voltage that the voltage of A point can be initialised drags down.
In the course of work of image element circuit shown in Fig. 5, a frame time T (frame period) can be divided into double teacher: initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase.Be described in conjunction with drive waveforms Fig. 6 by image element circuit shown in Fig. 5 below, in fact, embodiment two is in conjunction with the driving process of sequential chart 4b and the roughly the same of the present embodiment.
(1) initial phase
At initial phase, LED control signal V eMfor high level V h, transistor seconds T2 conducting, the sweep signal V of current line sCAN [n]for low level V l, third transistor T3 turns off, the first sweep signal V of lastrow sCAN [n-1]for high level V h, the 4th transistor T4 opens, and the voltage of Section Point B is discharged to low-voltage V by the 4th transistor T4 r, because first node A is unsettled, therefore, the voltage of the first node A voltage that is also initialised is pulled down to a certain low level, thus completes the initialization to first node A and Section Point B.
(2) the valve value compensation stage
The sweep signal V of lastrow sCAN [n-1]for from high level V hbe converted to low level V l, the 4th transistor T4 turns off, and third transistor T3 responds the sweep signal V of current line sCAN [n]open, LED control signal V eMremain high level V h, therefore transistor seconds T2 opens, and control pole and the first node A of driving transistors T1 are coupled, because the voltage on now data signal line DataLine is reference voltage V rEF, therefore, the voltage of the control pole of first node A and driving tube is V rEF; First level end V dDcharged until driving transistors cut-off to Section Point B by the driving transistors T1 of conducting, now, the voltage of Section Point B is elevated to V rEF-V tH, wherein V tHfor the threshold voltage of driving transistors T1.After the valve value compensation stage terminates, the threshold voltage information of driving transistors T1 is stored in memory capacitance C1 two ends.It should be noted that V rEF-V tHbe less than the threshold voltage of light-emitting component OLED to obtain high-contrast.
Other stages are similar to the respective stage of embodiment one, repeat no more.
Known by analyzing above, except can compensating threshold voltage change and mobility change except, being also advantageous in that of the present embodiment decreases a scan signal line, it completes the initialization of current line by the sweep signal of lastrow, the aperture opening ratio of pixel can be increased, reduce the complexity of peripheral circuit.
Embodiment four:
Please refer to Fig. 7 a, Fig. 7 b and Fig. 7 c, three kinds of image element circuit structure figure disclosed in the present embodiment, be with above-described embodiment two difference, in the present embodiment, first electrode coupling of the 4th transistor T4 is to data signal line (as shown in Figure 7a), or first electrode coupling of the 4th transistor T4 is to first electrode (as shown in Figure 7b) of transistor seconds T2, or first electrode coupling of the 4th transistor T4 is to second electrode (as shown in Figure 7 c) of transistor seconds T2, the 4th transistor T4 responds initialization control signal V rST, thus provided by data signal line at the initialization current potential of the first electrode input of initial phase the 4th transistor T4, the initialization voltage signal V utilizing data signal line to provide thus rcomplete the initialization to first node A and Section Point B.
Please refer to Fig. 8, for the driver' s timing figure of image element circuit shown in the present embodiment, the driving process of the present embodiment image element circuit and above-described embodiment broadly similar, difference is, at initial phase, initialization voltage signal is provided by data signal line, and the 4th transistor T4 responds initialization scan signal, completes the initialization to image element circuit.
In the image element circuit course of work of the present embodiment, a frame time T (frame period) can be divided into double teacher: initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase.Be described the concrete operations of the image element circuit of the present embodiment in conjunction with drive waveforms Fig. 8 by image element circuit shown in Fig. 7 a below, shown in Fig. 7 b and Fig. 7 c, the concrete operations of image element circuit are similar, therefore do not repeat.
(1) initial phase
At initial phase, the voltage signal on data signal line is low level signal V r.LED control signal V eM, sweep signal V sCANwith initialization control signal V rSTbe high level V h, therefore, transistor seconds T2, third transistor T3 and the 4th transistor T4 all conductings, therefore, the voltage of first node A and Section Point B is all initialized to low level signal V r, thus complete the initialization to first node A and Section Point B.
(2) in the valve value compensation stage
Initialization scan signal is from high level V hbe converted to low level V l, the 4th transistor T4 turns off, sweep signal V sCANwith LED control signal V eMremain high level V hto make transistor seconds T2 and third transistor T3 keep conducting, control pole and the first node A of driving transistors T1 are coupled, because the voltage on now data signal line is reference voltage V rEF, therefore, the voltage of the control pole of first node A and driving transistors T1 is V rEF; First level end V dDcharged until driving transistors T1 ends to Section Point B by the driving transistors T1 of conducting, now, the voltage of Section Point B is elevated to V rEF-V tH, wherein V tHfor the threshold voltage of driving transistors T1.After the valve value compensation stage terminates, the threshold voltage information of driving transistors T1 is stored in memory capacitance C1 two ends.For obtaining high-contrast, V rEF-V tHthe threshold voltage of light-emitting component OLED can be less than.
Other stages are similar to the respective stage of embodiment one, repeat no more.
Known by analyzing above, except can compensating threshold voltage change and mobility change except, being also advantageous in that of the present embodiment, the initialization voltage signal provided by utilizing data signal line can make panel reduce by a low level voltage.
Embodiment five:
Please refer to Fig. 9, image element circuit structure figure disclosed in the present embodiment, is with the various embodiments described above difference, and the control pole of the 4th transistor T4 is coupled to second electrode of the 4th transistor T4; First electrode coupling of the 4th transistor T4 is to initialization control signal V rET, the voltage of Section Point B is discharged by the 4th transistor T4 of diode-connected, completes the initialization to Section Point B.After completing initialization, initialization control signal keeps high level that the 4th transistor T4 is turned off, and no longer affects the work of circuit.
Please refer to Figure 10, for the driving process sequential chart of circuit shown in Fig. 9, the driving process of the present embodiment image element circuit is roughly similar to the driving process of embodiment two, difference is, the initialization voltage presentation mode of initial phase Section Point B and the closedown mode of valve value compensation stage the 4th transistor T4.Be described below in conjunction with the course of work of image element circuit to image element circuit shown in driver' s timing Figure 10 a and Fig. 9.In this image element circuit course of work, a frame time T (frame period) can be divided into double teacher: initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase.
(1) initial phase
The sweep signal V of current line sCAN [n]with LED control signal V eMfor high level V h, therefore, transistor seconds T2 and third transistor T3 conducting, the control pole of first node A and driving tube T1 is by the voltage V on data signal line rEFbe initialised to V rEF; Initialization pulse voltage signal V rETfor low level, the voltage of Section Point B is discharged to low level by the 4th transistor T4 of diode-connected and completes initialization to Section Point B, thus completes the initialization to first node A and Section Point B.
(2) in the valve value compensation stage
Initialization pulse voltage signal V rETbe high level from low transition, then the 4th transistor T4 turns off, and third transistor T3 and transistor seconds T2 responds the sweep signal V of current line sCANwith LED control signal V eMhigh level V hand open, because the control pole of driving transistors T1 and first node A are coupled, the voltage now on data signal line is reference voltage V rEF, therefore, the voltage of the control pole of first node A and driving tube is V rEF; First level end V dDcharged until driving transistors T1 ends to Section Point B by the driving transistors T1 of conducting, now, the voltage of Section Point B is elevated to V rEF-V tH, wherein V tHfor the threshold voltage of driving transistors T1.After the valve value compensation stage terminates, the threshold voltage information of driving transistors T1 is stored in memory capacitance C1 two ends.For obtaining high-contrast, V rEF-V tHthe threshold voltage of light-emitting component OLED can be less than.
Other stages are similar to the respective stage of embodiment one, repeat no more.
In another specific embodiment, its driver' s timing is as shown in Figure 10 (b).During initialization, T3 pipe keeps turning off, now T4 conducting, and B point is initialized to a certain low level, then A point is also initialized to low level, completes initialization V later rETfor high level, T4 pipe turns off, and circuit starts to enter threshold value and extracts the stage; Extract the stage in threshold value, third transistor T3 and transistor seconds T2 responds the sweep signal V of current line sCANwith LED control signal V eMhigh level V hand open, because the control pole of driving transistors T1 and first node A are coupled, the voltage now on data signal line is reference voltage V rEF, therefore, the voltage of the control pole of first node A and driving tube is V rEF; First level end V dDcharged until driving transistors T1 ends to Section Point B by the driving transistors T1 of conducting, now, the voltage of Section Point B is elevated to V rEF-V tH, wherein V tHfor the threshold voltage of driving transistors T1.After the valve value compensation stage terminates, the threshold voltage information of driving transistors T1 is stored in memory capacitance C1 two ends.For obtaining high-contrast, V rEF-V tHthe threshold voltage of light-emitting component OLED can be less than.Other stages are similar to the respective stage of embodiment one, repeat no more.
Known by analyzing above, except can compensating threshold voltage change and mobility change except, a power lead has been lacked in being also advantageous in that of the present embodiment, and then can reduce process complexity, and simplifies structure.
Embodiment six:
Please refer to Figure 11, a kind of image element circuit structure figure disclosed in the present embodiment, be with the various embodiments described above difference, also comprise the second initialization transistor in image element circuit disclosed in the present embodiment (to describe for ease of combining diagram, also the 5th transistor is called) T5, it act as in the threshold value extraction stage as image element circuit provides reference voltage V rEF.Reference voltage V needed for first node A rEFand/or initialization voltage is transmitted by the 5th transistor T5, data signal line only provides data-signal V dATA, the sequential control of reduced data line thus, can make the line time of image element circuit reduce by reasonably designing, easily meeting the display demand of high resolving power and high frame rate further.Above-described embodiment one to five all can make suitable amendment on its image element circuit structure, to design the respective pixel circuit comprising the 5th transistor T5, such as, namely image element circuit shown in Figure 11 is the particular circuit configurations increasing by the 5th transistor T5 and obtain on the image element circuit basis of embodiment three, and other embodiment also can design in a similar manner and obtain.
In order to reduce the control signal of image element circuit, the sweep signal of several rows above can be made full use of to carry out initialization and the threshold value leaching process of image element circuit, if arrange the time that the line time of often going equals threshold value extraction, current line pixel is n-th line, then the control of the 4th transistor extremely can be coupled to the sweep signal of the n-th-2 row, and the control pole of the 5th transistor T5 is coupled to the sweep signal of the (n-1)th row.
Particularly, the difference of the image element circuit in the image element circuit of the present embodiment and embodiment three comprises: image element circuit also comprises the 5th transistor T5, and the control pole of the 5th transistor T5 is coupled to the sweep signal V of the (n-1)th row sCAN [n-1], first electrode coupling of the 5th transistor T5 is to reference voltage source signal V rEF, second electrode coupling of the 5th transistor T5 is to first node A; The control pole of the 4th transistor T4 is coupled to the sweep signal V of the n-th-2 row sCAN [n-2].
In the course of work of image element circuit shown in Figure 11, a frame time T (frame period) can be divided into double teacher: initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase.In conjunction with drive waveforms Figure 12, the place that this embodiment is different from embodiment three is described.
(1) initial phase
At initial phase, LED control signal V eMfor high level V h, transistor seconds T2 conducting, the sweep signal V of current line sCAN [n]with the sweep signal V of the (n-1)th row sCAN [n-1]for low level V l, third transistor T3 and T5 transistor turn off, the sweep signal V of the n-th-2 row sCAN [n-2]for high level V h, the 4th transistor T4 opens, and the voltage of Section Point B is discharged to low-voltage V by the 4th transistor T4 r, because first node A is unsettled, therefore, the voltage of the first node A voltage that is also initialised is pulled down to a certain low level, thus completes the initialization to first node A and Section Point B.
(2) in the valve value compensation stage
The sweep signal V of the n-th-2 row sCAN [n-2]from high level V hbe converted to low level V l, the 4th transistor T4 turns off, the sweep signal V of current line sCAN [n]for low level V l, third transistor T3 turns off, and the 5th transistor T5 responds the sweep signal V of the (n-1)th row sCAN [n-1]conducting, LED control signal V eMremain high level V h, transistor seconds T2 conducting, control pole and the first node A of driving transistors T1 are coupled, and therefore, the voltage of the control pole of first node A and driving transistors T1 is V rEF; First level end V dDcharged until driving transistors T1 ends to Section Point B by the driving transistors T1 of conducting, now, the voltage of Section Point B is elevated to V rEF-V tH, wherein V tHfor the threshold voltage of driving transistors T1.After the valve value compensation stage terminates, the threshold voltage information of driving transistors T1 is stored in memory capacitance C1 two ends.For obtaining high-contrast, V rEF-V tHthe threshold voltage of light-emitting component OLED can be less than.
(3) data write phase
LED control signal V eMfor low level V l, transistor seconds T2 turns off, the sweep signal V of the (n-1)th row sCAN [n-1]with the sweep signal V of the n-th-2 row sCAN [n-2]be low level V l, the 4th transistor T4 and the 5th transistor T5 turns off; The sweep signal V of current line sCAN [n]for high level V h, third transistor T3 is in conducting state, and the signal voltage that data signal line provides is data voltage V dATA, this data voltage refreshes the voltage of first node A to V by the third transistor T3 of conducting dATA, the voltage of Section Point B at the voltage of first node A from V rEFbe charged to V dATAprocess in, by the intrinsic capacity C of memory capacitance C1 and light-emitting component OLED oLEDcoupling be coupled to V b i:
V B I = C 1 C 1 + C O L E D ( V D A T A - V R E F ) + V R E F - V T H - - - ( 8 )
Wherein, V b ifor the voltage of Section Point B, C1 and C oLEDthe capacitance of the intrinsic capacity of memory capacitance C1 and light-emitting component OLED respectively.Therefore, the voltage difference now between first node A and Section Point B is
V A - V B I = V D A T A - &lsqb; C 1 C 1 + C O L E D ( V D A T A - V R E F ) + V R E F - V T H &rsqb; = C O L E D C 1 + C O L E D ( V D A T A - V R E F ) + V T H - - - ( 9 )
Other stages are similar to the respective stage of embodiment one, repeat no more.
Known by analyzing above, except can compensating threshold voltage change and mobility change except, although the present embodiment is a many transistor, but it takes full advantage of the scan signal line of going above, decreases line time, circuit is made relatively to be more suitable for the display of large area high resolving power.
Embodiment seven:
Please refer to Figure 13, a kind of image element circuit structure figure disclosed in the present embodiment, be with above-described embodiment six difference, the control pole of the 5th transistor T5 in image element circuit disclosed in the present embodiment is coupled to scan control signal line, and the control pole of the 4th transistor T4 is coupled to the scan signal line of certain a line above.Along with the raising of display panel frequency and resolution, the line time of often going is shorter and shorter, line time is not enough to provide time enough to carry out threshold value extraction, because if the time that threshold value is extracted is shorter, the precision compensated will reduce greatly, the threshold value of therefore wishing time of extracting is long does not increase line time again, adopts the present embodiment can meet the display demand of high resolving power and high frame rate.
The time of given threshold extraction is a times of line time, and a is integer, then the control pole of the 4th transistor is coupled to the sweep signal of n-th-(a+1) row.3 times of settings that the present embodiment is line time with threshold value extraction time (should be understood, this multiple is not limited to 3, it can be the multiple of other numerical value), then the control pole of the 4th transistor T4 is coupled to the sweep signal of the n-th-4 row, and the control pole of the 5th transistor is coupled to scan control signal V sC.In order to improve the precision that threshold value is extracted, threshold value extraction time can be increased.
Figure 14 is the drive waveforms figure of the image element circuit of the present embodiment, and the place different from embodiment six to the present embodiment below in conjunction with drive waveforms Figure 14 is described.In the course of work of image element circuit shown in Figure 13, a frame time T (frame period) can be divided into double teacher: initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase.
(1) initial phase
At initial phase, LED control signal V eMfor high level V h, transistor seconds T2 conducting, the sweep signal V of current line sCAN [n]with scan control signal V sCbe low level V l, third transistor T3 and T5 transistor turn off, the sweep signal V of the n-th-4 row sCAN [n-4]for high level V h, the 4th transistor T4 conducting, the voltage of Section Point B is discharged to low-voltage V by the 4th transistor T4 r, because first node A is unsettled, therefore, the voltage of the first node A voltage that is also initialised is pulled down to a certain low level, thus completes the initialization to first node A and Section Point B.
(2) in the valve value compensation stage
The scan control signal V of the n-th-4 row sCAN [n-4]from high level V hbe converted to low level V l, the 4th transistor T4 turns off, the first scan control signal V of current line sCAN [n]for low level V l, third transistor T3 turns off, and the 5th transistor T5 responds the scan control signal V of current line sChigh level conducting, LED control signal V eMremain high level V h, transistor seconds T2 opens, and control pole and the first node A of driving transistors T1 are coupled, and therefore, the voltage of the control pole of first node A and driving tube is V rEF; First level end V dDcharged until driving transistors T1 ends to Section Point B by the driving transistors T1 of conducting, now, the voltage of Section Point B is elevated to V rEF-V tH, wherein V tHfor the threshold voltage of driving transistors T1.After the valve value compensation stage terminates, the threshold voltage information of driving transistors T1 is stored in memory capacitance C1 two ends.For obtaining high-contrast, V rEF-V tHthe threshold voltage of light-emitting component OLED can be less than.
(3) data write phase
LED control signal V eMfor low level V l, transistor seconds T2 turns off, the sweep signal V of the n-th-4 row sCAN [n-4]for low level V l, the 4th transistor T4 turns off; The scan control signal V of current line sCfor low level V l, the 5th transistor T5 turns off; The sweep signal V of current line sCAN [n]for high level V h, third transistor T3 is in conducting state, and the signal voltage that data signal line provides is data voltage V dATA, this data voltage refreshes the voltage of first node A to V by the third transistor T3 of conducting dATA, the voltage of Section Point B at the voltage of first node A from V rEFbe charged to V dATAprocess in, by the intrinsic capacity C of memory capacitance C1 and light-emitting component OLED oLEDcoupling be coupled to V b i:
V B I = C 1 C 1 + C O L E D ( V D A T A - V R E F ) + V R E F - V T H - - - ( 10 )
Wherein, V b ifor the voltage of Section Point B, C1 and C oLEDthe capacitance of the intrinsic capacity of memory capacitance C1 and light-emitting component OLED respectively.Therefore, the voltage difference now between first node A and Section Point B is
V A - V B I = V D A T A - &lsqb; C 1 C 1 + C O L E D ( V D A T A - V R E F ) + V R E F - V T H &rsqb; = C O L E D C 1 + C O L E D ( V D A T A - V R E F ) + V T H - - - ( 11 )
Other stages are similar to the respective stage of embodiment one, repeat no more.
Known by analyzing above, except can compensating threshold voltage change and mobility change except, although the present embodiment is a many control signal wire, line time shortens to the time that data write and mobility compensate further, makes circuit relatively be more suitable for large area high resolving power and shows.
Each embodiment also can adopt form that is luminous or grouping driving simultaneously to carry out the driving operation of completing circuit according to specific circumstances above, in the process adopting luminescence simultaneously and grouping to drive, whole panel or the threshold value extraction with the image element circuit organized are carried out simultaneously, that can shorten every row like this effectively becomes the time, with being applicable to large area and high-resolution display demand.
In addition, when above embodiment is applied to the display device of the embodiment of the present application, in one embodiment, sweep trace can be such as initialization control signal V to the sweep signal that respective pixel circuit provides rST, sweep signal V sCAN, LED control signal V eMdeng.In other embodiment, some sweep signal needed for image element circuit also can be provided by the mode of global lines (such as shown in Figure 15), the power lead such as needed for the first level end, initialization control signal V iNTrequired initialization control line V rdeng, those skilled in the art can adjust according to the demand of concrete image element circuit.
Based on image element circuit disclosed in above-described embodiment, the application one embodiment also discloses a kind of display circuit driving method, this display circuit adopts the image element circuit of above-described embodiment, wherein each drive cycle of image element circuit comprises initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase, driving method comprises:
At initial phase, transistor seconds T2 conducting and third transistor T3 conducting, the respectively voltage at initialization memory capacitance C1 two ends and the voltage of driving transistors T1 control pole.In other embodiments, the voltage at initialization memory capacitance C1 two ends can also be assisted by the 4th transistor T4 of conducting and the 5th transistor T5.
In the valve value compensation stage, third transistor T3 and/or the 5th transistor T5 conducting, controlled pole to driving transistors T1 and provide reference voltage, read the threshold voltage information of driving transistors T1 and stored by memory capacitance C1.In one embodiment, reference voltage can be provided by third transistor T3; In another kind of embodiment, also can provide reference voltage by the 5th transistor T5.
In data write phase, third transistor T3 conducting transmission data voltage V dATA, by the memory capacitance of series connection and the dividing potential drop of intrinsic capacity of luminescent device by data voltage V dATAwith threshold voltage V tHbe stored in memory capacitance C1 two ends.
At mobility compensated stage, third transistor T3 conducting makes the voltage of first node A remain data voltage V dATA, transistor seconds T2 conducting makes driving tube conducting to the charging of B point, and the knots modification of B point voltage is only relevant with the mobility of driving tube, haveing nothing to do, completing the compensation of mobility by reasonably controlling ON time with threshold voltage.
In glow phase, driving transistors T1 produces drive current according to the pressure differential at memory capacitance C1 two ends, and drives light-emitting component OLED luminous.
The image element circuit that the embodiment of the present application provides produces the threshold voltage information of driving transistors by the form that source is followed, the threshold voltage of the driving transistors information of voltage relevant with half-tone information is produced at memory capacitance two ends with the threshold voltage of compensation for drive transistor by the form of electric charge dividing potential drop, complete after data write that other states of holding circuit are constant opens light emitting control pipe in advance, the information at memory capacitance two ends finally forms reference voltage in luminescence process by changing Δ V.Wherein, Δ V and threshold voltage have nothing to do, only with the mobility of driving transistors about thus the mobility change compensated.In luminescence process, this reference voltage remains unchanged, the threshold voltage of the drive current and driving transistors and light-emitting component flowing through luminescent device is had nothing to do, and utilize the overlapping mobility change improving driving tube of control signal on the impact of image element circuit brightness uniformity, solve the display problem of non-uniform that display panel causes due to threshold voltage and mobility change.
More than applying concrete each example to set forth the application, just understanding the application for helping, not in order to limit the application.In specific embodiment, transistor all adopts N-type TFT, but, according to the thought of the application, and not departing from the scope of the application, other image element circuits in conjunction with P type or N, P type TFT also can be designed.And, for the application person of ordinary skill in the field, without departing from the inventive concept of the premise, some simple deductions, distortion or replacement can also be made.

Claims (8)

1. an image element circuit, is characterized in that, comprises driving transistors, light-emitting component, drive control transistor, data write transistor and memory capacitance, wherein,
Described driving transistors connects described light-emitting component, for driving described light-emitting component luminous;
Described data write transistor connection data signal wire, signal scanning line, described drive control transistor and described memory capacitance respectively, for when the sweep signal of described scan signal line is effective, respond the data-signal of described data signal line to provide the voltage of described data-signal;
Described drive control transistor connects LED control signal line, described driving transistors and described data write transistor respectively, for responding described LED control signal, complete the compensation of threshold value and mobility, and the voltage of the described data-signal provided by described data write transistor writes described driving transistors;
Described memory capacitance also connects described light-emitting component, for the threshold voltage for providing described driving transistors when described drive control transistor carries out valve value compensation.
2. image element circuit as claimed in claim 1, it is characterized in that, also comprise the first initialization transistor, described first initialization transistor connects described light-emitting component, and the one end for the described driving transistors of connection to described light-emitting component provides initialization voltage.
3. image element circuit as claimed in claim 2, it is characterized in that, also comprise the second initialization transistor, described second initialization transistor connects described drive control transistor, for by described drive control transistor for described driving transistors provides required reference voltage or initialization voltage.
4. image element circuit as claimed in claim 3, is characterized in that,
The control pole of described driving transistors connects the second electrode of described drive control transistor, first Electrode connection first level end of described driving transistors, the first end of light-emitting component described in second Electrode connection of described driving transistors, the second end of described light-emitting component connects second electrical level end;
The control pole of described drive control transistor connects LED control signal line, the second electrode of data write transistor described in the first Electrode connection of described drive control transistor;
The control pole of described data write transistor connects described scan signal line, data signal line described in the first Electrode connection of described data write transistor;
First electrode tip of described memory capacitance connects the second electrode of described data write transistor, and the second electrode tip of described memory capacitance connects the first end of described light-emitting component.
5. image element circuit as claimed in claim 4, is characterized in that,
The control pole of described first initialization transistor connects initialization control signal, the control pole of the first electrode of initialization voltage or described data signal line or described drive control transistor or the second electrode of drive control transistor or described first initialization transistor described in first Electrode connection of described first initialization transistor, the first end of light-emitting component described in the second Electrode connection of described first initialization transistor;
Or, the control pole of described first initialization transistor connects the scan signal line of front n-(a+1) row that described image element circuit is expert at, the line number that n is expert at for described image element circuit, a is the integral multiple of scanning a line time used, initialization voltage described in first Electrode connection of described first initialization transistor, the first end of light-emitting component described in the second Electrode connection of described first initialization transistor.
6. image element circuit as claimed in claim 5, is characterized in that,
The control pole of described second initialization transistor connects scan signal line or the scan control signal of the previous row that described image element circuit is expert at, first Electrode connection reference voltage of described second initialization transistor, the second Electrode connection initialization voltage of described second initialization transistor.
7. the driving method of an image element circuit, be applied to the image element circuit any one of claim 1 to 6 as described in claim, it is characterized in that, each drive cycle of described image element circuit comprises initial phase, valve value compensation stage, data write phase, mobility compensated stage and glow phase, and described driving method comprises:
At described initial phase, make described drive control transistor conducting, the voltage of one end of the described driving transistors of connection of memory capacitance described in initialization and described light-emitting component;
In the described valve value compensation stage, described drive control transistor keeps conducting, so that for described driving transistors provides reference voltage, to described driving transistors charging until described driving transistors turns off, extract the threshold voltage of described driving transistors and be stored in described memory capacitance;
In described data write phase, described drive control transistor is turned off, described data are made to write transistor turns, the voltage of one end of the described driving transistors of the connection of described light-emitting component is refreshed, and described memory capacitance stores the voltage difference between the voltage of one end of the voltage of described data write transistor output and the described driving transistors of connection of described light-emitting component;
At described mobility compensated stage, described data write transistor keeps conducting, make described drive control transistor conducting, described driving transistors conducting, the voltage of one end of the described driving transistors of connection of described light-emitting component, through described driving transistors lifting, makes the two ends of described memory capacitance form the reference voltage of luminescence process;
In described glow phase, make described data write transistor and turn off, described drive control transistor keeps conducting, the glow current required for described driving transistors produces according to the voltage difference at described memory capacitance two ends, and drives described light-emitting component luminous.
8. a display device, is characterized in that, comprising:
Image element circuit matrix, described image element circuit matrix comprises the image element circuit as described in any one of claim 1-7 being arranged in the capable M column matrix of N, N and M is positive integer;
Gate driver circuit, for generation of sweep signal, and provides required control signal by image element circuit described in each line scan signals alignment of being formed along first direction;
Data drive circuit, for generation of the data-signal representing half-tone information, and provides data-signal by image element circuit described in each data-signal alignment of being formed along second direction;
Controller, for providing Control timing sequence respectively to described gate driver circuit and described data drive circuit.
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