CN105450189B - A kind of handset emissions system - Google Patents
A kind of handset emissions system Download PDFInfo
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- CN105450189B CN105450189B CN201510275621.5A CN201510275621A CN105450189B CN 105450189 B CN105450189 B CN 105450189B CN 201510275621 A CN201510275621 A CN 201510275621A CN 105450189 B CN105450189 B CN 105450189B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a kind of handset emissions systems, comprising: GaN radio-frequency power amplifier, GaN intelligently voltage boosting and modulation power source module, digital processing element, battery and antenna；Wherein, GaN radio-frequency power amplifier is used to carry out power amplification to the signal received；GaN intelligently voltage boosting and modulation power source module are used to cell voltage boosting to operating voltage, carry out high voltage supply and power modulation to the GaN radio-frequency power amplifier；Digital processing element is transferred to the GaN radio-frequency power amplifier for handling signal of communication, by transceiver, and carries out real-time control to the GaN radio-frequency power amplifier and the GaN intelligently voltage boosting and modulation power source module.Handset emissions system provided by the present invention, the power amplifier using GaN radio-frequency power amplifier as transmitting link, compared with prior art, the present invention has the advantages that efficient, broadband and small size.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of handset emissions system.
Background technique
With the arrival of big data era, mobile phone carries the mission of information transmitting as terminal.Mobile communication enters
The 4G epoch, 3G, 4G cell phone year shipment amount reach 300,000,000.4G future terminal wireless technology has several features: 1) high order modulation,
2) broadband, 3) multicarrier, 4) MIMO.These features also bring new ask to terminal device while propulsion information transmits
Topic.
The power consumption statistics that mobile communication link carries out, 80% Power Consumption Source emit in link, radio frequency in transmitting link
Power amplifier accounts for 80% Power Consumption Source again.Meanwhile high order modulation signal, example are generallyd use in modern terminal wireless communication
Such as HSPA+, LTE.It has a feature: being all high peak-to-average power ratio signal.The very big rollback of mobile phone normal need, just can guarantee logical
Quality is talked about, and mobile phone radio frequency efficiency of amplitude increases with rollback amount and is reduced, this results in mobile phone PA inefficient, is with LTE
For example in 7dB rollback point, power amplifier (hereinafter referred to as PA) efficiency only has 18-26%.So low efficiency, directly results in hand
Machine battery power consumption is too fast, and heat consumption is big, so that mobile phone is easy to fever, this causes very bad Product Experience to user.Amount of batteries
It consumes too fast, is the maximum sore spot of mobile phone.How when battery technology can not be broken through, efficiency of RF power amplifier is promoted, at
For world research direction.
The development that the 4G epoch communicate, wherein mainly having benefited from the commercialization of LTE.LTE uses OFDMA modulation technique, improves
Band efficiency, peak rate are up to 1Gps, and maximum bandwidth is up to 100M.Now widely used LTE frequency band reaches
To 43 Bands, 700M-3.4G is covered.So many frequency band brings new challenge: 1, distinct communication standards；2) different frequency range
Between inclusiveness；3) different mobile phone standards；4) more PA, filter, switch, duplex are needed.Therefore handset emissions link will
Become abnormal huge.And in numerous variations, right and wrong are often with there is challenge for radio-frequency transmissions link.Major flow beacon at present
Standard includes GSM, WCDMA, HSDPA, LTE, CDMA.LTE is the evolution tendency of current all standards, wherein include again LTE,
LTE-Advance, in LTE standard presently, there are 43 bands, need cell phone manufacturer to do multichannel on transmitting chain road,
To meet the communication requirement of each department covering multiband multi-standard.Cell phone system will use integrated multi-emitting link form in this way,
Mobile phone generally requires 4 to 5 transmission channels in this way, to handle the obstructed frequency range letter of GSM, CDMA, WCDMA, LTE respectively
Number, meanwhile, as channel increases, it is also necessary to be equipped with filter, switch, duplexer to each transmission channel.Mobile phone area in this way
It will be unable to reduce, and small-sized is modern communications market, the bright spot that can be readily accepted by customers as product.Therefore each family
It all is considering how to reduce radio-frequency channel device count, is reaching optimization area, so that mobile phone complete machine area, volume be enable to contract
It is small.But technology growth requirement is often ungratified, other than meeting Multi-standard multi-band, it is also necessary to meet future communications carrier wave
The harsh demand of polymerization.And carrier wave polymerization will have very high requirement to the bandwidth of radio-frequency power amplifier, send out according to international communication
Exhibition requires, and future needs mobile phone that the wide band radio-frequency of 100M is supported to communicate.How mobile phone in this way improves radio-frequency power amplification if being faced with
Device efficiency, system broad, transmitting chain road surface product small-sized problem.
Use most important method at this stage at present are as follows: (referred to as using Multi-Mode Multi-Band power amplifier
MMMB) power amplifier；GaAs MMMB power amplifier occupies most markets at present, and newest ET scheme is also base
Based on GaAs MMMB power amplifier or CMOS power amplifier.
It is divided for 3G/4G application band, it is main to communicate mainstream frequency range 900M, 1800M, 2100M and 2600M at present
After frequency range subdivision, 12Bands can achieve.MMMB power amplifier would generally could cover corresponding frequency band with three to five.
In order to enable 3 to 5 being optimal of power amplifier properties, need to make match circuit on peripheral circuit.Hair entire in this way
Penetrating aisle spare will be unable to be reduced.Present non-ET scheme all uses APT technology, therefore also needs to add a power management
Chip, entire solution occupy bigger area.
Simultaneously in MMMB power amplifier, need not stop by switch to switch, Lai Shixian different systems and different frequency range
It is corresponding.Efficiency of RF power amplifier is unable to reach optimization in this way.At present in LTE Digital Transmission, the peak-to-average force ratio of 7dB, MMMB
Efficiency power amplifier only has 25%, and the following needs further increase system in data transmission bauds and video calling
The coding difficulty of signal of communication, this will make the efficiency of radio-frequency power amplifier lower.And existing GaAs HBT power amplification
Device can not realize efficient target on existing system frame.
Furthermore MMMB power amplifier is all narrow-band communication system, and future communication systems will be cut to software radio
Change, the maximum bright spot of software wireless transmitting terminal, be exactly it is system digitalized, radiofrequency signal will in a digital manner at end-to-end, come
Passback is passed.System needs to emit link with very wide bandwidth characteristic in this way.It is special as its narrowband for GaAs MMMB PA
Property determines, can not undertake the requirement objective of broadband system.
Summary of the invention
The object of the present invention is to provide a kind of handset emissions system, and it is an object of the present invention to provide a kind of high efficiency, it is broadband and
Reduce the emission system of radio-frequency transmissions link device total area.
In order to solve the above technical problems, the present invention provides
A kind of handset emissions system characterized by comprising GaN radio-frequency power amplifier, GaN intelligently voltage boosting and modulation
Power module, digital processing element, battery and antenna；
Wherein, the GaN radio-frequency power amplifier is used to carry out power amplification, the GaN radio frequency to the signal received
The operating voltage of power amplifier is 10V to 50V；
The GaN intelligently voltage boosting and modulation power source module are used to cell voltage boosting to the operating voltage, to described
GaN radio-frequency power amplifier carries out high voltage supply and power modulation；
The digital processing element is transferred to the GaN radio-frequency power by transceiver and amplifies for handling signal of communication
Device, and real-time control is carried out to the GaN radio-frequency power amplifier and the GaN intelligently voltage boosting and modulation power source module.
Optionally, the GaN radio-frequency power amplifier is broadband GaN linear power amplifier or broadband GaN digital switch
Power amplifier.
Optionally, the type of the GaN radio-frequency power amplifier is discrete GaN radio-frequency power amplifier, GaN monolithic microwave
The GaN radio-frequency power amplifier module of integrated circuit RF power amplifier or integrated RF switch.
Optionally, further includes:
Filter, for being filtered to the signal amplified through the GaN radio-frequency power amplifier；The GaN radio frequency function
When rate amplifier is in switching mode, the filter is specially analog waveform structure filter again.
Optionally, the number of the GaN radio-frequency power amplifier and the GaN intelligently voltage boosting and modulation power source module is
One；The GaN radio-frequency power amplifier is connected with the GaN intelligently voltage boosting and modulation power source module.
Optionally, the number of the GaN radio-frequency power amplifier is multiple, the GaN intelligently voltage boosting and modulation power source mould
The number of block is one；Multiple GaN radio-frequency power amplifiers are in parallel, each GaN radio-frequency power amplifier with the GaN
Intelligently voltage boosting and modulation power source module are connected；The output end of each GaN radio-frequency power amplifier respectively with single filter
Input terminal be connected, the output end of the filter is successively connected with RF switch, duplexer and antenna for mobile phone.
Optionally, the number of the GaN radio-frequency power amplifier is one, the GaN intelligently voltage boosting and modulation power source mould
The number of block is multiple；The GaN intelligently voltage boosting and modulation power source module are serial connection, each GaN intelligently voltage boosting and modulation
Power module is connected with the GaN radio-frequency power amplifier.
Optionally, the number of the GaN radio-frequency power amplifier is one, the GaN intelligently voltage boosting and modulation power source mould
The number of block is multiple；The GaN intelligently voltage boosting and modulation power source wired in parallel pass through cascade system and the GaN radio frequency function
Rate amplifier is connected.
Handset emissions system provided by the present invention uses GaN radio-frequency power amplifier as the power of transmitting link
Amplifier.Representative of the GaN device as third generation semiconductor at the end radio frequency PA, is compared with GaAs, and GaN possesses higher forbidden band
Width, higher disruptive field intensity, higher power density and higher thermal conductivity and saturation rate.
Compared with the prior art, the invention has the following advantages that
(1) efficient GaN radio-frequency power amplifier.The primary core focus of cell phone system is its efficiency, as peak is equal
The problem of than the application of modulated signal, on the one hand improving the availability of frequency spectrum, but also bringing low efficiency under rollback power simultaneously.
For future communications framework gradually to digitlization in transition, and in terms of promoting power amplification efficiency, traditional Linear Power Amplifier has 78% or so
Ceiling is difficult have further promotion again.In the future of software radio, digital power amplifier will gradually climb up stage, Class
E, 78% limitation is not present in the close power amplifiers such as Class F, possesses 100% Efficiency Limit ability.
GaN RF power device, to 50V high voltage supply, can give full play to its higher efficiency, Cds compares using 10
Small, the magnitude of only several pF, Rout increases variable quantity with frequency can be more much smaller than Si, GaAs material, while as RF switch
Power amplifier, the switch response time is very fast, therefore in digital power amplifier, and using GaN as close power amplifier, efficiency is available big
The raising of amplitude.
(2) efficient GaN intelligently voltage boosting and modulation power source module.Radio-frequency power is powered using battery.High-power
In the case of, electric current is bigger.Power supply needs to provide large current load ability；In small-power, electric current is smaller, power supply
It only needs to provide small load capacity.If powering using battery is singly deposited, Power supply belt is caused to carry not flexible, it is inefficient.And it adopts
With GaN intelligently voltage boosting and modulation power source module, load load capacity can be flexibly controlled.GaN switching speed and conducting simultaneously
Resistance ratio regular tap device is much lower.Use GaN switching device as control switch circuit in this way, power module has very
High efficiency, its efficiency is higher than common power by 5% or so under low load.High voltage power supply exports electric current very little, system radiating meeting simultaneously
It is smaller, improve the customer experience of mobile phone.
System applicable broadband GaN radio-frequency power amplifier solves the problems, such as mobile phone efficiency, broadband and small size, because of its work electricity
Pressure needs high voltage supply.Therefore system power supply uses GaN intelligently voltage boosting and modulation power source module, can be realized the need of whole system
It asks.
(3) broadband.Determine that device is appropriate for broadband, main determining factor is Cds, because Cds is with frequency increase pair
The very big influence of output impedance bring.Cds is excessive, can deteriorate the bandwidth characteristic of device.The present invention uses GaN as PA, because
Its Cds is smaller, the magnitude of only several pF, and Rout increases variable quantity with frequency can be more much smaller than Si, GaAs material.Therefore, originally
Invention has extraordinary broadband character, and the big bandwidth of 1G may be implemented in single device.At present communication mainstream frequency range be related to 900M,
1800M, 2100M and 2600M, frequency range segment 12Bands.Using 1-2 radio-frequency power amplifier cooperation output intelligent tuning
The application demand for covering all 12Bands may be implemented in device.
(4) small size.GaN material has higher power density properties compared with GaAs material.Therefore with smaller face
Product can reach required power capability.Simultaneously under the advantages characteristic in broadband, multifrequency can be covered using less PA
Section, to reduce the area of handset emissions link.
(5) intelligent.Broadband GaN amplifier and GaN boosting and modulation module are carried out by digital processing element real
When control, while be responsible for signal of communication is encoded, and by the communication information of processing by transceiver (Transiver) transmission
To PA.It realizes to the power modulation under different capacity grade, or in the output signal time slot free time, power supply can be closed
And GaN switching channels, realize that quiescent dissipation maximizes target.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of specific embodiment of handset emissions system provided by the present invention；
Fig. 2 is the schematic diagram of second of specific embodiment of handset emissions system provided by the present invention；
Fig. 3 is the schematic diagram of the third specific embodiment of handset emissions system provided by the present invention；
Fig. 4 is the schematic diagram of the 4th kind of specific embodiment of handset emissions system provided by the present invention.
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
The present invention provides a kind of handset emissions system, which includes:
GaN radio-frequency power amplifier, GaN intelligently voltage boosting and modulation power source module, digital processing list, battery and antenna.
Wherein, GaN radio-frequency power amplifier, for carrying out power amplification, the amplification of GaN radio-frequency power to the signal received
The operating voltage of device is 10V to 50V, to give full play to its high efficiency and broadband character；
It should be pointed out that GaN radio-frequency power amplifier can specifically use bandwidth GaN linear power amplifier or broadband
GaN digital switch power amplifier, operating mode can correspond to Linear Power Amplifier mode or digital switch power amplifier mode.
The type of GaN radio-frequency power amplifier can be specially discrete GaN radio-frequency power amplifier, GaN monolithic microwave collection
The GaN radio-frequency power amplifier module switched at circuit radio-frequency power amplifier or integrated RF.These do not influence the present invention
Realization.
GaN intelligently voltage boosting and modulation power source module, for cell voltage to be boosted to above-mentioned operating voltage, to the GaN
Radio-frequency power amplifier carries out high voltage supply and power modulation；
As the power supply circuit of GaN radio-frequency power amplifier, GaN intelligently voltage boosting and modulation power source module are for realizing from electricity
Cell voltage boosts to the function of up to 50V voltage, and the function of power supply is modulated to GaN radio-frequency power amplifier.
Digital processing element is transferred to the GaN radio-frequency power amplifier by transceiver for handling signal of communication,
And real-time control is carried out to the GaN radio-frequency power amplifier and the GaN intelligently voltage boosting and modulation power source module.
It should be noted that digital units simultaneously itself also have the characteristics that it is flexible and changeable, can be by digital units module
With independent FPGA or DSP, individually radio-frequency power amplifier and booster power module are handled.Also it can use current hand
The characteristics of machine multicore SOC, has very powerful calculation processing ability on SOC, SOC control form is directlyed adopt, between communication
Using I^2C control bus or faster RFFE control bus come concatenation module, the digital communication of intermodule is realized.
Handset emissions system provided by the invention can also include: filter as a preferred implementation manner, for pair
The signal amplified through the GaN radio-frequency power amplifier is filtered；When GaN radio-frequency power amplifier is in switching mode,
The filter can be specially analog waveform structure filter again, for carrying out shaping to signal.
Wherein, filter can be set in the handset emissions system by the way of internal or external.As a kind of tool
Body embodiment, can be by the way that filter and RF switch be integrated in jointly in GaN radio-frequency power amplifier module.
Handset emissions system provided by the embodiment of the present invention, when GaN radio-frequency power amplifier is Linear Power Amplifier mode,
It can be formed DPD framework, can also be passed through by digital processing element and GaN radio-frequency power amplifier digital feedback channel
Digital processing element and GaN intelligently voltage boosting and modulation power source module form ET framework.
When GaN radio-frequency power amplifier be close power amplifier mode when, can be Class D, Class E, Class F,
Either anti-Class F framework, can also be Continuous Class F and Class J framework.
Handset emissions system provided by the present invention uses GaN radio-frequency power amplifier as the power of transmitting link
Amplifier.Representative of the GaN device as third generation semiconductor at the end radio frequency PA, is compared with GaAs, and GaN possesses higher forbidden band
Width, higher disruptive field intensity, higher power density and higher thermal conductivity and saturation rate.
It is found that efficiency is equal to 78.5%* when radio-frequency power amplifier work is in linear mode from efficiency calculation formula
Output voltage swing/VDD, and existing its operating voltage of GaAs power amplifier is generally relatively low, 10V or less.Such output voltage swing
It can not be made very high, solution is to improve its amplitude of oscillation, to improve efficiency by improving supply voltage.The forbidden band of GaAs
Width is 1.4eV, and the forbidden bandwidth of disruptive field intensity 0.4Mv/cm, Si are 1.1eV, and disruptive field intensity is that 0.3Mv/cm compares
It is low.Its material property determines its unbearable high pressure.And the forbidden bandwidth of GaN material reaches 3.4eV, disruptive field intensity reaches
3Mv/cm.Therefore GaN is highly suitable as high tension apparatus.GaN radio-frequency power amplifier work in this way is in 10-50V, efficiency
It will be not fully exerted.
While harmonic treatment technology of arranging in pairs or groups, current data are shown, GaN power amplifier is maximum in linear model
Efficiency can exceed that 80%.In this way because use GaN power amplifier, efficiency by break through 78% ceiling.In LTE signal
Under, when rollback 7dB, efficiency will be higher by 7%-10% than GaAs.This is considerable for mobile phone.
The broadband character for evaluating radio-frequency power amplifier, from Bode-Fano criterion it is found that wide-band radio frequency power amplifier is set
When meter matching, when RC increases, quality of match is necessarily reduced, therefore High " Q " Circuit difficulty matches.And Q value is determined by output capacitance size
Fixed.Therefore it determines whether radio-frequency power amplifier has broadband character, is mainly determined according to its Q value.GaN radio-frequency power
Amplifier Cds is smaller, and the magnitude of only several pF is 1/the 3 of GaAs, CMOS.Rout, which increases variable quantity with frequency, to be compared
Si, GaAs material are much smaller, therefore GaN wideband power amplifer can be realized the wideband requirements of covering multiband.And GaN simultaneously
Power density is twice of GaAs.Therefore GaN radio-frequency power amplifier area can be very small.On the basis of broadband, area is same
Sample can be with small size.This is that GaAs HBT cannot achieve.
System can be realized by broadband GaN radio-frequency power amplifier to be improved handset emissions efficiency, realizes single power
Amplifier covers multiband and small-sized target.But current electricity supply system for mobile phone is all directly to be powered by battery, or control
Cell voltage processed improves power supply control flexibility under small-power grade using converter.Therefore battery power supply is directlyed adopt,
GaN radio-frequency power amplifier performance will receive limitation.Efficiency will be unable to emerge from.Therefore corresponding switch conversion is needed
Power circuit.Its circuit needs to realize that high pressure is converted, while can intelligently adjust.And CMOS conversion circuit common at present uses
High pressure conversion may be implemented in BJT technique.But its transfer efficiency can be relatively low, usually low-power conversion under, efficiency less than
80%.And GaN switch conversion power supply has extraordinary switching speed, conduction loss is very low.
Area is very small simultaneously.When driving integrated control with CMOS, it is able to achieve high efficiency smart control.General GaN switch
Power module efficiency is higher by 5% than other switch power module efficiency.Therefore it using GaN boosting and modulation power source module, gives
The power supply of GaN radio-frequency power amplifier, may be implemented intelligent control purpose of efficiently boosting.
Shown in sum up, compared with the prior art, the invention has the following advantages that
(1) efficient GaN radio-frequency power amplifier.The primary core focus of cell phone system is its efficiency, as peak is equal
The problem of than the application of modulated signal, on the one hand improving the availability of frequency spectrum, but also bringing low efficiency under rollback power simultaneously.
For future communications framework gradually to digitlization in transition, and in terms of promoting power amplification efficiency, traditional Linear Power Amplifier has 78% or so
Ceiling is difficult have further promotion again.Therefore in the future of software radio, digital power amplifier will gradually climb up stage,
78% limitation is not present in the close power amplifiers such as Class E, Class F, possesses 100% Efficiency Limit ability.
As current Polar transceiver system, GaN radio-frequency power amplifier can choose linear power amplifier, because
Polar transceiver feature is that transceiver transmission signal is phase modulated signal.Therefore, communication construction relatively high to linear requirements
It generally selects linear power amplifier and carries out signal amplification.Therefore select broadband GaN linear amplifier as emit link selection,
Linear requirement can met, can be simultaneously reached broadband, efficient, small size purpose.Meanwhile can with GaN boost and
Modulation module power source combination carries out real-time control by digital processing element.Form wide-band envelope tracking system.It can be entire wide
In band, efficient purpose is realized.With current GaAs, CMOS RF envelope tracking system ratio, broadband GaN radio frequency linear power is used
Amplifier has broader bandwidth, higher efficiency, the advantage of more small area.While arrange in pairs or groups GaN intelligently voltage boosting and modulation power source module.
Entire emission system will be more efficient, flexibly.
When the following cell phone system enters software radio, radio-frequency power amplifier can choose broadband GaN switch function
Rate amplifier amplifies signal.Because software radio framework determines its digitlization feature.Therefore radio-frequency power
Amplifier will be operate in the switching modes such as Class E, Class F.And the efficiency of RF power amplifier maximum value of switching mode
It can achieve 100%.And GaAs, CMOS radio-frequency power amplifier on as close power amplifier because of its material own characteristic, cause
It cannot achieve broadband, efficient, small size target.
GaN RF power device, to 50V high voltage supply, can give full play to its higher efficiency, Cds compares using 10
Small, the magnitude of only several pF, Rout increases variable quantity with frequency can be more much smaller than Si, GaAs material, while as RF switch
Power amplifier, the switch response time is very fast, therefore in digital power amplifier, and using GaN as close power amplifier, efficiency is available big
The raising of amplitude.By applying GaN radio-frequency power amplifier, multiple systems framework is changed.In Class E, Class F, Class
J, in the topology such as Class G, GaN high-voltage digital power amplifier is higher by least 5% than traditional power amplification efficiency.GaN is because its is defeated simultaneously
Capacitor is small out, is very suitable to carry out harmonic treatment technology.By harmonic management, the efficiency of amplifier can be further improved.
Meanwhile broadband GaN radio-frequency power amplifier can be mono- using discrete broadband GaN radio-frequency power amplifier, broadband GaN
The broadband GaN radio-frequency power amplifier module of piece microwave integrated RF power amplifier or integrated RF switch, or will penetrate
Frequency switch, filter and broadband GaN radio-frequency power amplifier integration module.Variation according to cell phone system can be with flexible configuration.
(2) efficient GaN intelligently voltage boosting and modulation power source module.Radio-frequency power is powered using battery.High-power
In the case of, electric current is bigger.Power supply needs to provide large current load ability；In small-power, electric current is smaller, power supply
It only needs to provide small load capacity.If powering using battery is singly deposited, Power supply belt is caused to carry not flexible, it is inefficient.And it adopts
With GaN intelligently voltage boosting and modulation power source module, load load capacity can be flexibly controlled.GaN switching speed and conducting simultaneously
Resistance ratio regular tap device is much lower.Use GaN switching device as control switch circuit in this way, power module has very
High efficiency.Its efficiency is higher than common power by 5% or so under low load.High voltage power supply exports electric current very little, system radiating meeting simultaneously
It is smaller, the customer experience of mobile phone can be improved in this way.System applicable broadband GaN radio-frequency power amplifier solves mobile phone efficiency, width
Band and small size problem, because its operating voltage needs high voltage supply.Therefore system power supply uses GaN intelligently voltage boosting and modulation power source
Module.It can be realized whole system demand.
(3) broadband.Determine that device is appropriate for broadband, main determining factor is Cds, because Cds is with frequency increase pair
The very big influence of output impedance bring.Cds is excessive, can deteriorate the bandwidth characteristic of device.The present invention uses GaN as PA, because
Its Cds is smaller, the magnitude of only several pF, and Rout increases variable quantity with frequency can be more much smaller than Si, GaAs material.Therefore, originally
Invention has extraordinary broadband character.
(4) small size.GaN material has higher power density properties compared with GaAs material.Therefore with smaller face
Product can reach required power capability.Simultaneously under the advantages characteristic in broadband, multifrequency can be covered using less PA
Section, to reduce the area of handset emissions link.
(5) intelligent.Broadband GaN amplifier and GaN boosting and modulation module are carried out by digital processing element real
When control.It realizes to the power modulation under different capacity grade, or in the output signal time slot free time, power supply electricity can be closed
Source and GaN switching channels.Realize that quiescent dissipation maximizes target.
Meanwhile can change according to different mobile phone frameworks, realize system architecture optimization.Such as it is envelope-tracking framework, average
Envelope-tracking, or be following digital control framework.Digital processing element all can adjust intelligence to transmitting module
Control.Digital units itself also have the characteristics that simultaneously it is flexible and changeable, can by digital units module independent FPGA or DSP,
Individually radio-frequency power amplifier and booster power module are handled.Also the characteristics of can use current mobile phone multicore SOC,
There is very powerful calculation processing ability on SOC, directly adopt between the communication of SOC control form using I^2C control bus or more
Fast RFFE control bus carrys out concatenation module.Realize the digital communication of intermodule.
A kind of schematic diagram of specific embodiment of handset emissions system provided by the present invention is as shown in Figure 1, wherein institute
The number for stating GaN radio-frequency power amplifier and the GaN intelligently voltage boosting and modulation power source module is one；The GaN radio frequency
Power amplifier is connected with the GaN intelligently voltage boosting and modulation power source module.
In the present embodiment, single GaN intelligently voltage boosting and modulation power source module give single GaN radio-frequency power amplifier (GaN
PA it) powers, forms the independently-powered framework of single channel.Using the powerful digital processing capabilities of mobile phone, Digital Control is realized.This implementation case
Example, using the broadband character of GaN, is converted cell voltage to high pressure by single intelligently voltage boosting and modulation module.Pass through number
The flexibility of control, so that whole system efficiency optimization, and realize broadband target.Meanwhile because power supply module is one
A, radio-frequency power amplifier is also one.So entire emission system area will be very small.Whole system may be implemented in this way
Area optimizes.
GaN PA is usually operated at high pressure conditions, it is therefore desirable to particularly prepare high voltage power supply power supply circuit for it.Generally
Device because its conducting resistance it is relatively high, input, output parasitic capacitance are bigger, therefore bring very big switching loss, thus
Constrain system effectiveness.Therefore the application utilizes the feature that GaN conducting resistance is smaller, input and output parasitic capacitance is small.Using
GaN intelligently voltage boosting unit and modulation power source unit are powered as high voltage converter circuitry to GaN PA.
Intermodule communication mode will be number bus control form.Here by GaN intelligently voltage boosting unit and modulation power source list
The digital processing part of member is placed on digital processing element progress.Unit and modulation power source unit are carried out by bus interface conversion
Real-time control.It can allow the variation of entire power module energy quick response power amplifier, while GaN intelligently voltage boosting and modulation power source module
Power supply conversion efficiency can have been advanced optimized, so that entire digital amplifier systems efficiency further increases, has realized single electricity
GaN PA digital power amplifier framework is supported in source, covers wideband application.
For current 5 mould, the 13 frequency application demand in market, common GaAs chip 3 to 5 single-chips of needs, which are just able to satisfy, is
System demand.Meanwhile existing framework needs to support demand in face of higher frequency section.The present invention contains various possibility, can will be existing
Frequency range is sub-divided into 2 to 3 tunnels or more multichannel.Big bandwidth can be covered with single-chip in this way, so that whole system configuration is cleverer
It is living.In digital processing element, increase corresponding digital control circuit and its control bus interface, data in mobile phone processing is utilized
Ability carries out real-time control to all channels.
The schematic diagram of second of specific embodiment of handset emissions system provided by the present invention is as shown in Figure 2, wherein
The number of the GaN radio-frequency power amplifier be it is multiple, the number of the GaN intelligently voltage boosting and modulation power source module is one；
The GaN radio-frequency power amplifier be multiple parallel connections, each GaN radio-frequency power amplifier with the GaN intelligently voltage boosting and tune
Power module processed is connected.The output of each GaN radio-frequency power amplifier connects filter, several transmission channels after wave filter,
It is connected with RF switch, launches signal finally by antenna for mobile phone.
In the present embodiment, transmission channel uses multi-channel mode, to meet the needs of covering all frequency ranges.Broadband
GaN radio-frequency power amplifier can cover very wide frequency band.But supplier can still select according to different systems, set to do link
Meter, therefore by increasing radio frequency transmitting channel, cooperates with broadband GaN broad band amplifier, can institute is in need in covering design covers
The frequency range of lid.Therefore in actual implementation, GaN radio-frequency power amplifier can be one, be also possible to multiple.It is determined by system requirements
It is fixed.And power supply power supply part, it is supplied by single GaN intelligently voltage boosting and modulation power source module.This structure optimization power module needs
It asks, is powered with single GaN intelligently voltage boosting and modulation power source module to all branch's radio-frequency power amplifiers.Because cell phone system is sent out
It penetrates link and periphery link is easy to produce the signal interference of interchannel.
Meanwhile selecting broadband GaN linear power amplifier or broadband GaN close power amplifier that can determine rear class filtering device form
It is different.Usual linear power amplifier can choose broadband filter, and software wireless transceiver, need to put in radio-frequency power
Analog waveform structure filter again is placed behind big device.Reach linear demand by waveform shaping.Also, it is passed in multi channel signals
The defeated upper selection for increasing RF switch and being used to switch different channels, enhances signal path flexible configuration.
The schematic diagram of the third specific embodiment of handset emissions system provided by the present invention is as shown in Figure 3, wherein
The number of the GaN radio-frequency power amplifier is one, and the number of the GaN intelligently voltage boosting and modulation power source module is multiple；
The GaN intelligently voltage boosting and modulation power source module are serial connection, each GaN intelligently voltage boosting and modulation power source module with it is described
GaN radio-frequency power amplifier is connected.
In the present embodiment, multiple GaN intelligently voltage boostings and modulation power source module are supplied to single radio frequency power amplifirer
Electricity forms multiphase DCPS digitally controlled power source framework.Can be serial by multiple intelligently voltage boostings and modulation power source module, pass through powerful number
Multi-path serial is switched and carries out phase controlling by processing capacity, it is allowed to realize multiphase intelligently voltage boosting and modulation power source module for power supply.It is more
Phase intelligent modulation power supply can select to switch some power module in out of phase time slot, can allow each power supply mould in this way
Block mean allocation load capacity reduces the requirement to internal power module device, while reducing the area of each power module.Cause
This can be further improved efficiency using the intelligently voltage boosting and modulation power source module of this framework, and system is made to run more flexible number
Change, area smallerization.Each power module can be discrete independent current source module, be also possible to single integrated chip.It is
Unite working method it is identical with Fig. 1, all be rely on powerful digital processing element system is controlled, with realize system high efficiency,
Broadband connections.
The schematic diagram of 4th kind of specific embodiment of handset emissions system provided by the present invention is as shown in Figure 4, wherein
The number of the GaN radio-frequency power amplifier is one, and the number of the GaN intelligently voltage boosting and modulation power source module is multiple；
The GaN intelligently voltage boosting and modulation power source wired in parallel are connected by cascade system with the GaN radio-frequency power amplifier.
In the present embodiment, multiple intelligently voltage boostings and modulation power source module pass through the corresponding GaN switch function of cascade system
It puts, forms single channel digital power amplifier framework.Intelligently voltage boosting and modulation power source module are subjected to parallel connection, mentioned by cascaded switch mode
High intelligently voltage boosting and modulation power source module transfer efficiency.Usually single intelligently voltage boosting and modulation power source module directly carry out high pressure and turn
It changes.It is very high to switch control requirement, and efficiency will receive certain influence.Therefore by the way that direct boosting mode is become several sections
Boosting mode carrys out Weakened System to the requirement in control.And the multiple control requirement to GaN switching tube can be reduced, is improved
Switching frequency optimizes intelligently voltage boosting and modulation power source module size.Each power module can be discrete independent current source mould
Block is also possible to monolithic die.Its system operating mode is identical as Fig. 1, is all by powerful digital processing element pair
System is controlled, to realize system high efficiency, broadband connections.
It should be pointed out that above-mentioned embodiment is several specific application examples of the invention, however it is not limited to shown
These embodiments.And those skilled in the art are without creative efforts, obtained by deforming or replacing etc.
Other embodiments also within protection scope of the present invention.
GaN PA is applied to handset emissions system by the present invention, is given using GaN intelligently voltage boosting unit and modulation power source unit
GaN PA power supply.GaN PA, GaN intelligently voltage boosting unit and modulation power source unit are adjusted in real time using digital processing element
System, while being responsible for encoding signal of communication, and the communication information of processing is transferred to by transceiver (Transiver)
PA realizes the broadband of the device of system, efficient feature.
Gradually to digitlization in transition, and in terms of promoting power amplification efficiency, traditional Linear Power Amplifier has future communications framework
78% or so ceiling is difficult have further promotion again.Therefore in the future of software radio, digital power amplifier will gradually
Stage is climbed up, the close power amplifiers such as Class E, Class F have more than 80% efficiency.Present invention employs GaN PA as number
The core of word power amplifier framework, GaN PA can become existing Linear Power Amplifier, be equally applicable to APT, ET framework, and possess very
High efficiency.
GaN RF power device is needed using 10V to 50V high voltage supply, to give full play to its high efficiency and broadband character,
Therefore power supply conversion efficiency influences whether system effectiveness, becomes very crucial.Common intelligently voltage boosting and modulation power source module without
Method reaches high transfer efficiency, at this moment uses GaN intelligently voltage boosting and modulation power source module, can increase substantially conversion electric power effect
Rate.The combination of the two enables to whole system efficiency more more efficient than conventional architectures.
Determine that device is appropriate for broadband, main determining factor is Cds, because Cds increases with frequency to output impedance
The very big influence of bring.Cds is excessive, can deteriorate the bandwidth characteristic of device.The present invention uses GaN as PA, because its Cds compares
Small, the magnitude of only several pF, Rout increases variable quantity with frequency can be more much smaller than Si, GaAs material.Therefore, the present invention has non-
Often good broadband character.Communication mainstream frequency range is related to 900M, 1800M, 2100M and 2600M at present, and frequency range segments 12Bands.
Using 1-2 radio-frequency power amplifier cooperation output intelligent tuning device, the application demand for covering all 12Bands may be implemented.
China Mobile 4G requires the frequency of 5 mould 13 in existing cell phone system, needs to cover 13 frequency ranges simultaneously, and 5 kinds different
Standard.Method is to increase PA number of different frequency range to meet system requirements at present.And the application is put using broadband GaN radio-frequency power
Big device boosts to cell voltage using GaN intelligently voltage boosting and modulation power source module as transmitting link signal amplification module,
It exports and powers to GaN radio-frequency power amplifier, the two carries out real-time control by digital processing element, realizes the height of cell phone system
Effect, broadband, small-sized.Reduce system PA sum, save cost, solves the demand of system, while facing carrier wave
When polymerization, there is better adaptability.
GaN material has higher power density properties compared with GaAs material.Therefore it with smaller area, can reach
Power capability required by us.Simultaneously under the advantages characteristic in broadband, multiband can be covered using less PA, from
And reduce the area of handset emissions link.
In addition, conventional mobile phone system transmitting link is pole transceiver system, PA is traditional classical Linear Power Amplifier.Although
By system upgrade, APT, ET technology are applied, but system does not use mobile phone multicore digital processing capabilities, processing speed
It spends still slow.Meanwhile conventional architectures receive sensitivity between base station because needing to guarantee, need to increase linear surplus to protect
Hold sensitivity.And present invention employs digital architectures as transmitting main body, the pure switching behaviour of device, by structure filter again by wave
Shape shaping.This avoid systems to the linearity of interchannel, receives sensitivity to optimize.The present invention will be between device
Control transfer to digital processing element to carry out with data processing.By the powerful computing capability of mobile phone, system is supervised in real time
Control.Simultaneously architecturally, the present invention is also more flexible changeable, and GaN PA can be Linear Power Amplifier mode, is also possible to switch function
Mode playback.By the switching of different mode, freely cutting for digital switch power amplifier and Linear Power Amplifier APT and ET framework can be realized
It changes, to be more suitable for the multimode multi-standard demand of Modern Communication System.Switch can also be integrated in a chip by GaN PA
In, to further optimize to system.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (8)
1. a kind of handset emissions system characterized by comprising GaN radio-frequency power amplifier, GaN intelligently voltage boosting and modulation electricity
Source module, digital processing element, battery and antenna；
Wherein, the GaN radio-frequency power amplifier is used to carry out power amplification, the GaN radio-frequency power to the signal received
The operating voltage of amplifier is 10V to 50V；
The GaN intelligently voltage boosting and modulation power source module are used to cell voltage boosting to the operating voltage, penetrate to the GaN
Frequency power amplifier carries out high voltage supply and power modulation；
The digital processing element by transceiver is transferred to institute for handling signal of communication, by treated the signal of communication
GaN radio-frequency power amplifier is stated, and to the GaN radio-frequency power amplifier and the GaN intelligently voltage boosting and modulation power source mould
Block carries out real-time control；
The handset emissions system further include:
Filter, for being filtered to the signal amplified through the GaN radio-frequency power amplifier；The GaN radio-frequency power is put
When big device is in switching mode, the filter is specially analog waveform structure filter again；
Wherein:
When the number of the GaN radio-frequency power amplifier is multiple, the number of the GaN intelligently voltage boosting and modulation power source module is
One；Multiple GaN radio-frequency power amplifiers are in parallel, each GaN radio-frequency power amplifier with the GaN intelligently voltage boosting and
Modulation power source module is connected；The output end of each GaN radio-frequency power amplifier respectively with the input terminal phase of single filter
Even, the output end of the filter is successively connected with RF switch, duplexer and antenna for mobile phone.
2. handset emissions system as described in claim 1, which is characterized in that the GaN radio-frequency power amplifier is broadband GaN
Linear power amplifier or broadband GaN digital switch power amplifier.
3. handset emissions system as claimed in claim 2, which is characterized in that the type of the GaN radio-frequency power amplifier is
The GaN of discrete GaN radio-frequency power amplifier, GaN monolithic integrated microwave circuit radio-frequency power amplifier or integrated RF switch is penetrated
Frequency power amplifier module.
4. handset emissions system as described in any one of claims 1 to 3, which is characterized in that the GaN radio-frequency power amplifier
Number with the GaN intelligently voltage boosting and modulation power source module is one；The GaN radio-frequency power amplifier and the GaN
Intelligently voltage boosting and modulation power source module are connected.
5. a kind of handset emissions system characterized by comprising GaN radio-frequency power amplifier, GaN intelligently voltage boosting and modulation electricity
Source module, digital processing element, battery and antenna；
Wherein, the GaN radio-frequency power amplifier is used to carry out power amplification, the GaN radio-frequency power to the signal received
The operating voltage of amplifier is 10V to 50V；
The GaN intelligently voltage boosting and modulation power source module are used to cell voltage boosting to the operating voltage, penetrate to the GaN
Frequency power amplifier carries out high voltage supply and power modulation；
The digital processing element by transceiver is transferred to institute for handling signal of communication, by treated the signal of communication
GaN radio-frequency power amplifier is stated, and to the GaN radio-frequency power amplifier and the GaN intelligently voltage boosting and modulation power source mould
Block carries out real-time control；
Wherein, the number of the GaN radio-frequency power amplifier is one or more, the GaN intelligently voltage boosting and modulation power source mould
The number of block is one or more, when the number of the GaN radio-frequency power amplifier is one, the GaN intelligently voltage boosting and tune
When the number of power module processed is multiple；
The GaN intelligently voltage boosting and modulation power source module are serial connection, each GaN intelligently voltage boosting and modulation power source module with
The GaN radio-frequency power amplifier is connected；Or
The GaN intelligently voltage boosting and modulation power source wired in parallel pass through cascade system and the GaN radio-frequency power amplifier phase
Even.
6. handset emissions system as claimed in claim 5, which is characterized in that the GaN radio-frequency power amplifier is broadband GaN
Linear power amplifier or broadband GaN digital switch power amplifier.
7. handset emissions system as claimed in claim 6, which is characterized in that the type of the GaN radio-frequency power amplifier is
The GaN of discrete GaN radio-frequency power amplifier, GaN monolithic integrated microwave circuit radio-frequency power amplifier or integrated RF switch is penetrated
Frequency power amplifier module.
8. handset emissions system as claimed in claim 5, which is characterized in that when the GaN radio-frequency power amplifier with it is described
When the number of GaN intelligently voltage boosting and modulation power source module is one；The GaN radio-frequency power amplifier and GaN intelligence
Boosting and modulation power source module are connected.
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| CN201510275621.5A CN105450189B (en) | 2015-05-26 | 2015-05-26 | A kind of handset emissions system |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1747298A (en) * | 2004-09-10 | 2006-03-15 | 半导体元件工业有限责任公司 | Method of forming a multi-phase power supply controller |
| CN101689806A (en) * | 2007-05-07 | 2010-03-31 | 诺基亚公司 | Power supplies for RF power amplifier |
| CN102457185A (en) * | 2010-10-26 | 2012-05-16 | 立锜科技股份有限公司 | Multiphase changing-over type power supply unit as well as drive circuit and control method thereof |
| CN102611393A (en) * | 2011-12-26 | 2012-07-25 | 深圳市虹远通信有限责任公司 | Radio frequency power amplifier system having waveband switching function |
| CN102611472A (en) * | 2011-12-26 | 2012-07-25 | 深圳市虹远通信有限责任公司 | Multiband wireless signal transceiver system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7551027B2 (en) * | 2007-03-09 | 2009-06-23 | Tri Quint Semiconductor, Inc. | RF power amplifier mirror circuit for sensing current |
| US9312820B2 (en) * | 2012-09-23 | 2016-04-12 | Dsp Group Ltd. | CMOS based TX/RX switch |
-
2015
- 2015-05-26 CN CN201510275621.5A patent/CN105450189B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1747298A (en) * | 2004-09-10 | 2006-03-15 | 半导体元件工业有限责任公司 | Method of forming a multi-phase power supply controller |
| CN101689806A (en) * | 2007-05-07 | 2010-03-31 | 诺基亚公司 | Power supplies for RF power amplifier |
| CN102457185A (en) * | 2010-10-26 | 2012-05-16 | 立锜科技股份有限公司 | Multiphase changing-over type power supply unit as well as drive circuit and control method thereof |
| CN102611393A (en) * | 2011-12-26 | 2012-07-25 | 深圳市虹远通信有限责任公司 | Radio frequency power amplifier system having waveband switching function |
| CN102611472A (en) * | 2011-12-26 | 2012-07-25 | 深圳市虹远通信有限责任公司 | Multiband wireless signal transceiver system |
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