CN105336751B

CN105336751B - photoelectric sensor and its manufacturing method

Info

Publication number: CN105336751B
Application number: CN201410284240.9A
Authority: CN
Inventors: 林崴平
Original assignee: Shanghai Luoji Technology Co Ltd
Current assignee: Shanghai Luoji Technology Co Ltd
Priority date: 2014-06-23
Filing date: 2014-06-23
Publication date: 2018-06-22
Anticipated expiration: 2034-06-23
Also published as: CN105336751A

Abstract

The present invention provides a kind of photoelectric sensor and its manufacturing method, photoelectric sensor of the present invention includes the pixel unit being located on the substrate, pixel unit is made of photodiode and thin film transistor (TFT), wherein the drain electrode structure of thin film transistor (TFT) is used as the cathode construction of photodiode again, so that the area shared by pixel reduces, be conducive to improve the resolution ratio of photoelectric sensor, and the anode construction of photodiode is with cathode construction using laterally setting, effectively reduce the thickness of photoelectric sensor, so that photoelectric sensor of the present invention is small with size, the advantages of high resolution.The manufacturing method of photoelectric sensor of the present invention can be combined with traditional LC D manufacturing methods, simplified the production technology of photoelectric sensor, shortened the production cycle, effectively reduce production cost.

Description

Photoelectric sensor and its manufacturing method

Technical field

The present invention relates to semiconductor applications, and in particular to a kind of photoelectric sensor and its manufacturing method.

Background technology

Fingerprint recognition causes wider concern recently as very ancient bio-identification mode, especially in movement Prospect in payment more its bring wide prospect.The method that a variety of fingerprint recognitions have also been invented in people, for example optics, The many kinds mode such as condenser type, microwave, temperature and ultrasonic wave.But various modes have its merits and demerits.It is such as traditional Optical sensor mode can not be realized frivolous, and especially under high-resolution requirement, traditional equipment is bulky can not be portable, Therefore it is difficult to be integrated into equipment as mobile phone.Although other modes solve the problems, such as frivolous, but can not realize big face Product array can not combine other functions, and complex process, of high cost.

Medical Amorphous silicon flat-panel detectors of the prior art are a kind of traditional optical sensor, including non-crystalline silicon Photodiode and thin film transistor (TFT), operation principle are：In the anode of amorphous silicon photodiodes, i.e., add one in P-type layer Negative voltage between-3-- 9V when optical signal is irradiated in amorphous silicon photodiodes, produces in amorphous silicon photodiodes Raw electron hole pair.Under the action of electric field, hole converges in anode P-type layer, and electronics converges to cathode N-type layer.In film crystalline substance When body pipe turns off, signal constantly accumulates, and charge is output to data line when thin film transistor (TFT) is opened.According to the charge letter detected The size of number amount judges the power of optical signal.

Fig. 1 shows a kind of diagrammatic cross-section of Amorphous silicon flat-panel detectors pixel unit of the prior art, in transparent substrate Multiple flat panel detector pixel units are formed on 01, each flat panel detector pixel unit includes thin film transistor (TFT) 03 and amorphous Silicon photoelectric diode, wherein amorphous silicon photodiodes include being formed in first shading sequentially formed on 01 surface of transparent substrate The 02, first insulating layer 04 of layer, drain electrode layer 05, N-type layer 06, middle layer 07, P-type layer 08 and contact electrode 09, dielectric layer 10 insulate thin film transistor (TFT) 03 and amorphous silicon photodiodes, in thin film transistor (TFT) 03 and part without the region of illumination 10 surface of dielectric layer is formed with the second light shield layer 12, connection electrode 11 is formed on contact electrode 09, in the second light shield layer 12 Passivation layer 11 is formed with the top of connection electrode 11.Wherein the first light shield layer 02 is with the grid of thin film transistor (TFT) 03 in same metal Layer, the drain electrode of drain electrode layer 05 and thin film transistor (TFT) 03 is in same metal layer, it can be seen from the figure that this non-crystalline silicon photoelectricity The major part of diode is the lamination of P-type layer 08, middle layer 07 and N-type layer 06, and wherein middle layer 07 is by being lightly doped place Reason, therefore, the thickness of Amorphous silicon flat-panel detectors are similar to more than the drain electrode of thin film transistor (TFT) 03 be superimposed non-crystalline silicon light again The laminated thickness of electric diode, and the thickness of the middle layer 07 in amorphous silicon photodiodes is in 1 microns so that non-crystalline silicon The thickness of flat panel detector is larger, and light path of the incident light in the pixel unit of flat panel detector is longer, possibly into adjacent Pixel unit and generate interference.And flat panel detector pixel includes discrete thin film transistor (TFT) 03 and two pole of non-crystalline silicon photoelectricity Pipe, also at regular intervals between thin film transistor (TFT) 03 and amorphous silicon photodiodes, flat panel detector pixel unit occupied area It is larger so that resolution ratio is relatively low.In addition, the needs of amorphous silicon photodiodes are individually made after thin film transistor (TFT) 03 is formed Make, need multistep film forming and photoetching process so that production cost is higher.If the Amorphous silicon flat-panel detectors of this structure are used In fields such as fingerprint recognitions, the problem of production cost is high, resolution ratio is low, will limit its application on the portable equipments such as mobile phone.

It is therefore proposed that a kind of photoelectric sensor and its manufacturing method, manufacture that a kind of production cost is relatively low, light of high resolution Electric transducer becomes those skilled in the art's urgent problem to be solved.

Invention content

Of the invention to solve the problems, such as to be to provide a kind of photoelectric sensor and its manufacturing method, the photoelectric sensor has life The advantages of producing relatively low cost, high resolution, can preferably be used for fingerprint recognition.

To solve the above problems, the present invention provides a kind of photoelectric sensor, fingerprint recognition is used to implement, including：

Substrate, the substrate include the first area for being used to form thin film transistor (TFT), be used to form photodiode the Two regions；

Positioned at the grid of first area substrate surface；

Intrinsic semiconductor layer on grid；

The first discrete conductive structure of the intrinsic semiconductor layer surface, the second conductive knot on the substrate of first area Structure, compared with first conductive structure, closer to the second area of the substrate, described first leads second conductive structure Electric structure and second conductive structure include the first doping semiconductor layer and the first electrode that are located in intrinsic semiconductor layer Layer, first conductive structure are used as the source configuration of the thin film transistor (TFT), and second conductive structure is used as the film The drain electrode structure of transistor；

The dielectric layer being covered in first conductive structure, the second conductive structure and intrinsic semiconductor layer, positioned at There is the opening through the dielectric layer, the opening exposes the intrinsic semiconductor in the dielectric layer on two area substrates Layer；

The second doping semiconductor layer, the second electrode lay being sequentially located in the opening, second in the opening Doping semiconductor layer, the second electrode lay form third conductive structure；

Second conductive structure also serves as the cathode construction of photodiode, the third conduction knot in opening Structure is used as the anode construction of photodiode, and intrinsic half between the third conductive structure and second conductive structure Conductor is used as the light absorbing layer of photodiode；

The optical signal that fingerprint reflects can be converted into electric signal, and it is defeated to pass through thin film transistor (TFT) by the photodiode Go out, the photodiode forms a pixel unit with the thin film transistor (TFT).

Optionally, second doping semiconductor layer, the second electrode lay are also formed on the corresponding dielectric layer in first area, For forming the 4th conductive structure, the 4th conductive structure is used to form storage capacitance with second conductive structure.

Optionally, the first insulating layer is provided between the substrate and the intrinsic semiconductor layer.

Optionally, the material of the substrate, the first insulating layer and dielectric layer is translucent material.

Optionally, the photoelectric sensor further includes：It is covered in the second of the dielectric layer and second electrode layer surface Insulating layer, the material of the second insulating layer is translucent material.

Optionally, first insulating layer, dielectric layer, second insulating layer material be silicon nitride, silica or spin coating material Material.

Optionally, positioned at the contact electrode of the second electrode layer surface, the material of the contact electrode is tin indium oxide Or zinc oxide.

Optionally, the open bottom edge and the second conductive structure are close to model of the spacing at 1 to 5 microns of edge of opening In enclosing.

Optionally, second conductive structure is in the pectination with comb part, the third conductive structure in the opening In the pectination with comb part, and the third conductive structure in the opening and first conductive structure, the second conductive knot Structure is oppositely arranged and comb part is alternately arranged.

Optionally, the photoelectric sensor includes multiple pixel units, and multiple pixel units are arranged in array-like；

The photoelectric sensor further includes：The a plurality of grid lead arranged along line direction, the one of every grid lead End is electrically connected with external drive circuit, and often the thin-film transistor gate of row pixel unit is electrically connected with the grid lead gone together It connects, scanning voltage is provided for thin-film transistor gate；

A plurality of the first lead arranged along column direction, one end of every first lead is electrically connected with external drive circuit It connects, the first electrode layer in the first conductive structure of each column pixel unit is electrically connected with same column first lead, is described First electrode layer in first conductive structure provides basic voltage；

A plurality of the second lead arranged along column direction, one end of every second lead is electrically connected with external drive circuit It connects, the second electrode lay of each column pixel unit is electrically connected with same column second lead, and letter is provided for the second electrode lay Number voltage.

Optionally, the photoelectric sensor further includes：

The turn-on grid electrode lead of array external of pixel unit composition, the first lead, the second lead grid mistake Hole, the first via, the second via.

Optionally, in the grid via, the first via, the second via there is conductive layer, grid lead, first are drawn Line, the second lead are electrically connected with external drive circuit.

Optionally, photoelectric sensor further includes：Protective layer above the multiple pixel unit.

Optionally, photoelectric sensor further includes：The backlight being set to below substrate, the light that the backlight is sent out lead to It crosses above the thang-kng arrangement projects being set in pixel unit to pixel unit；

The photodiode is for detecting the light that the light is reflected by finger, to carry out fingerprint recognition.

Optionally, the photoelectric sensor further includes：Positioned at the light shield layer of second area substrate surface, in the light shield layer Intermediate region has the first light hole for exposing the substrate at light shield layer edge；

The intrinsic semiconductor layer intermediate region or intrinsic semiconductor layer edge have be located at first light hole just on Second light hole of side；

First light hole and second light hole are used to form the thang-kng structure.

Optionally, the third conductive structure in the opening be closing rectangle, third conduction knot in said opening Structure bottom is formed with third light hole, and the third light hole exposes the second light hole, and second conductive structure is opened with described The frame-type of closing is surrounded centered on mouthful so that the second conductive structure is in back-shaped structure with the third conductive structure in the opening, The thang-kng structure further includes the third light hole.

Optionally, the aperture of first light hole, the second light hole, third light hole is in the range of 0 to 10 microns.

Optionally, the light shield layer hides the intrinsic semiconductor layer in the opening between the second conductive structure completely Gear.

Optionally, the light shield layer is used to form storage capacitance with second conductive structure.

Optionally, the photoelectric sensor includes multiple pixel units, and multiple pixel units are arranged in array-like； The photoelectric sensor further includes：

The a plurality of third lead arranged along column direction, one end and the external drive circuit of the every third lead are electrically connected It connects, the light shield layer of each column pixel unit is electrically connected with same column third lead, and external voltage is provided for light shield layer.

Optionally, the external voltage is in the range of 0 to -10V.

Optionally, the scanning voltage is in the range of -10 to 15V, and the basic voltage is in the range of 0 to 3V, institute Signal voltage is stated in the range of 0 to -10V.

The present invention also provides a kind of manufacturing methods of photoelectric sensor, which is characterized in that including：

Substrate is provided, forms multiple pixel units over the substrate, wherein each pixel unit includes thin film transistor (TFT) And photodiode；

The step of forming pixel unit includes：

Substrate is provided, the substrate includes being used to form the first area of thin film transistor (TFT), is used to form photodiode Second area；

Grid is formed in the first area substrate surface；

Intrinsic semiconductor layer is formed on the grid；

The intrinsic semiconductor layer surface on the substrate of first area forms the first discrete conductive structure, the second conduction Structure, compared with first conductive structure, second conductive structure closer to the substrate second area, described first Conductive structure and second conductive structure include the first doping semiconductor layer being located in intrinsic semiconductor layer and the first electricity Pole layer, first conductive structure are used as the source configuration of the thin film transistor (TFT), and second conductive structure is used as described thin The drain electrode structure of film transistor；

The blanket dielectric layer in first conductive structure, the second conductive structure and intrinsic semiconductor layer；

The opening through the dielectric layer, the opening dew are formed in the dielectric layer on second area substrate Go out the intrinsic semiconductor layer；

Sequentially form the second doping semiconductor layer, the second electrode lay in said opening, the second doping in the opening Semiconductor layer, the second electrode lay form third conductive structure；

Second conductive structure also serves as photodiode cathode structure；The third conductive structure in opening Anode construction as photodiode, intrinsic between the third conductive structure and second conductive structure are partly led Body is used as the light absorbing layer of photodiode；

The optical signal that fingerprint reflects can be converted into electric signal, and it is defeated to pass through thin film transistor (TFT) by the photodiode Go out, so as to which the pixel unit be made to can be used in fingerprint recognition.

Optionally, in the step of forming second doping semiconductor layer, the second electrode lay, second doping is partly led Body layer, the second electrode lay are also formed on the corresponding dielectric layer in first area, and for forming the 4th conductive structure, the described 4th leads Electric structure is used to form storage capacitance with second conductive structure.

Optionally, it after grid is formed, is formed before intrinsic semiconductor layer, the first insulation is formed also on the grid Layer, in the intrinsic semiconductor layer formation and first insulating layer.

Optionally, the manufacturing method further includes：In the second insulation of the dielectric layer and the covering of second electrode layer surface Layer, the material of the second insulating layer is translucent material.

Optionally, the manufacturing method further includes：Second electrode layer surface in said opening forms contact electrode, institute The material for stating contact electrode is tin indium oxide or zinc oxide.

Optionally, make the spacing of the close edge of opening of the open bottom edge and the second conductive structure at 1 to 5 microns In the range of.

Optionally, it is in the pectination with comb part to make first conductive structure, the second conductive structure, in the opening Third conductive structure be in comb part pectination, and the comb part of the third conductive structure in the opening with it is described First conductive structure, the second conductive structure are oppositely arranged and comb part is alternately arranged.

Optionally, the manufacturing method further includes：Backlight is set below substrate, and the light that the backlight is sent out leads to It crosses above the thang-kng arrangement projects being formed in pixel unit to pixel unit.

Optionally, during grid is formed, light shield layer synchronously is formed in second area substrate surface, in the screening Photosphere intermediate region forms the first light hole for exposing the substrate at light shield layer edge；

It is formed in the intrinsic semiconductor layer intermediate region or intrinsic semiconductor layer edge and is being located at first light hole just Second light hole of top；

Optionally, make the rectangle that the third conductive structure in the opening is closing, third in said opening is conductive Structural base forms third light hole, and the third light hole exposes the second light hole, makes second conductive structure with described The frame-type of closing is surrounded centered on opening so that the second conductive structure is in back-shaped knot with the third conductive structure in the opening Structure, the thang-kng structure further include the third light hole.

Optionally, make range of the aperture of first light hole, the second light hole, third light hole at 0 to 10 microns It is interior.

Optionally, the light shield layer is made to hide the intrinsic semiconductor layer in the opening between the second conductive structure completely Gear.

Optionally, the process that grid and light shield layer are formed in the substrate surface includes：Using magnetron sputtering method described Substrate surface forms the first metal layer, removes part the first metal layer to substrate surface is exposed by photoetching, forms film crystal The first light hole in tube grid, light shield layer and light shield layer.

Optionally, the process that intrinsic semiconductor layer is formed in first surface of insulating layer includes：Using plasma increases In the first surface of insulating layer deposition intrinsic non-crystalline silicon, the intrinsic amorphous in part is removed by photoetching for extensive chemical vapour deposition process Silicon forms intrinsic semiconductor layer to the first surface of insulating layer, the intrinsic amorphous silicon of reservation is exposed.

Optionally, include in the process of the first conductive structure of intrinsic semiconductor layer surface formation, the second conductive structure： Using plasma enhances chemical vapour deposition technique in the intrinsic semiconductor layer surface deposited n-type non-crystalline silicon, non-in the N-type Crystal silicon surface covers second metal layer, carries out photoetching to the second metal layer, N-type non-crystalline silicon, removes most second gold medal Belonging to layer, N-type non-crystalline silicon to exposing intrinsic semiconductor layer, remaining N-type non-crystalline silicon forms the first doping semiconductor layer, and remaining the Two metal layers form first electrode layer.

Optionally, the material of the second electrode lay is metal or translucent conductive material.

Optionally, second sequentially formed is formed in square dielectric layer surface and the opening on the first electrode Doping semiconductor layer, the second electrode lay process include：It covers and sequentially forms in the dielectric layer surface and the opening P-type non-crystalline silicon, third metal layer, part P-type non-crystalline silicon, third metal layer are removed to exposing dielectric layer surface by photoetching, In above first electrode, the described opening retained and the P-type non-crystalline silicon of open circumferential, third metal layer form second Doping semiconductor layer, the second electrode lay.

Optionally, the manufacturing method further includes：

The multiple pixel unit is made to arrange in array-like；

When forming grid, synchronize to form a plurality of grid lead arranged along line direction, the one of every grid lead End is electrically connected with external drive circuit, and often the grid of row pixel unit is electrically connected with the grid lead gone together；

It when forming first electrode layer, synchronizes to form a plurality of the first lead arranged along column direction, every described first is drawn One end of line is electrically connected with external drive circuit, the first electrode layer and same column in the first conductive structure of each column pixel unit One the first lead electrical connection；

It when forming the second electrode lay, synchronizes to form a plurality of the second lead arranged along column direction, every described second is drawn One end of line is electrically connected with external drive circuit, and the second electrode lay of each column pixel unit and same column second lead are electrically connected It connects.

Optionally, the manufacturing method further includes：

In the array external of pixel unit composition, it is respectively formed turn-on grid electrode lead, the first lead, second lead Grid via, the first via, the second via.

Optionally, conductive layer is formed in the grid via, the first via, the second via, grid lead, first is drawn Line, the second lead are electrically connected with external drive circuit.

Optionally, the manufacturing method further includes：Protective layer is formed above the multiple pixel unit.

Compared with prior art, technical scheme of the present invention has the following advantages：

Photoelectric sensor of the present invention includes the pixel unit being located on the substrate, and pixel unit is by photodiode and thin Film transistor forms, and has the grid positioned at substrate first area on substrate, and intrinsic above substrate first area is partly led Raceway groove of the body layer as thin film transistor (TFT), the intrinsic semiconductor layer on substrate second area is as lateral photodiode Light absorbing layer, the first conductive structure, the second conductive structure in the intrinsic semiconductor layer of substrate first area are used respectively Make source configuration, the drain electrode structure of the thin film transistor (TFT).

Covered with dielectric layer in first conductive structure, the second conductive structure and intrinsic semiconductor layer, positioned at the secondth area There is the opening through the dielectric layer in the dielectric layer on the substrate of domain, the opening exposes the intrinsic semiconductor layer, The opening includes the second doping semiconductor layer sequentially formed, the third conductive structure of the second electrode lay, and the third is led Electric structure is used as the anode construction of photodiode, and second conductive structure also serves as the cathode of lateral photodiode Structure, the second electrode lay connect negative potential, inject intrinsic between the second conductive structure and the opening when light and partly lead During body layer, lateral photodiode is opened, and is tired out in the first doping semiconductor layer of the negative electrical charge constantly in the second conductive structure Product, hole is constantly accumulated in the second doping semiconductor layer of third conductive structure, since the second conductive structure also serves as film The drain electrode structure of transistor, when thin film transistor (TFT) is opened, the source configuration of thin film transistor (TFT) is connected with drain electrode structure, and second leads The charge accumulated in electric structure enters source configuration, and then export by source configuration by raceway groove, due to intensity of illumination difference The quantity of electric charge accumulated in the first doping semiconductor layer in the second conductive structure can be influenced, is opened so as to influence thin film transistor (TFT) Qi Shi, the output current of the source configuration of thin film transistor (TFT), therefore photoelectric sensor of the present invention can be used for fingerprint recognition, work as finger The upper surface of photoelectric sensor of the present invention is placed on, the light projected from substrate direction is irradiated to finger surface and forms reflection.Instead The light penetrated is converted into electric signal by photodiode absorption.Due to uneven, the signal that raised position is reflected of fingerprint By force, the signal of the region reflection of recess is weak, so as to make the signal strength that optical sensor exports different.It is non-relative to the prior art Crystal silicon tablet surveys the vertical stratification of photodiode in device, and the photodiode in photoelectric sensor of the present invention uses lateral junction Structure, cathode construction, the anode construction of lateral photodiode are located at the different location in intrinsic semiconductor layer, cathode knot respectively Intrinsic semiconductor layer between structure, anode construction serves as light absorbing layer so that the thickness of lateral photodiode is smaller, same Under the incident light of sample angle, light path of the incident light in pixel unit is shorter so that pixel unit is high to the binding character of light, phase Do not allow to be also easy to produce interference between adjacent pixel unit.And the upper surface of the light absorbing layer of intrinsic semiconductor layer can directly by The irradiation of light is beneficial to the charge accumulation of lateral photodiode.In addition, the second conductive structure is used as the film crystal The drain electrode structure of pipe also serves as the cathode construction of lateral photodiode, i.e., lateral photodiode is directly in film crystalline substance Stored charge on the drain electrode structure of body pipe, and opened with thin film transistor (TFT) and export signal, pixel unit institute is saved in this way The area accounted for so that the smaller that pixel unit can make, and then independent identification is carried out to the region that refers to of more small area, it improves The resolution ratio of photoelectric sensor.

In addition, in photoelectric sensor of the present invention in the manufacturing method of pixel unit, while thin film transistor (TFT) is formed, The cathode and light absorbing layer of lateral photoelectric sensor are formd, the manufacturing method of thin film transistor (TFT) only has more compared with the prior art The second doping semiconductor layer and the second electrode lay as lateral photodiode anode are formed, with the prior art Amorphous silicon flat-panel detectors compare, without carrying out being formed the step of independent photodiode again after thin film transistor (TFT) is formed Suddenly, production cost is effectively reduced.

Further, photoelectric sensor of the present invention can include：The 4th be formed on the corresponding dielectric layer in first area leads Electric structure, the 4th conductive structure is used to form storage capacitance with second conductive structure, to improve the second conductive structure Store the ability of charge.Photoelectric sensor of the present invention can include：Positioned at the light shield layer of second area substrate surface, for blocking Incident light, avoids the interference to light absorbing layer below substrate.

Further, photoelectric sensor of the present invention can include：The backlight being set to below substrate, the backlight are sent out Light by a thang-kng arrangement projects to above pixel unit, the photodiode is anti-by finger for detecting the light The light penetrated, to carry out fingerprint recognition.Using backlight as light source so that need not add lens above photoelectric sensor, make light Electric transducer is whole more frivolous, and enters the light of photoelectric sensor substantially along straight line, the area of each pixel unit with The area ratio for the body surface that pixel unit is detected is 1:1, light uniformity is preferable, can preferably avoid external environment Influence of the light to photoelectric sensor.

Further, the pixel unit of photoelectric sensor of the present invention can be in back-shaped structure：Third in the opening is conductive Structure is the rectangle of closing, and third conductive structure bottom in said opening has third light hole, the third light hole Expose thang-kng structure, the electromigration layer and first electrode layer surround the frame-type of closing centered on the opening so that second Conductive structure, third conductive structure are in back-shaped structure.It is only capable of from the light of substrate direction incidence from the central area of back-shaped structure Incidence, the light of other positions can be stopped by first electrode layer, the second electrode lay and cannot be irradiated to body surface and lateral light On electric diode, since the first light hole, the second light hole, third light hole are located at the center of back-shaped structure, relative to other Structure, the incident ray across back-shaped structure is more concentrated, in the case where pixel unit occupied area is constant, incident ray Angle smaller, when incident ray reflects on the surface of object, reflection angle is constrained by film thickness and incidence angle, can only be reflected Onto its corresponding pixel, it is not easy to other pixels are scattered to, so as to improve the precision of photoelectric sensor.

Description of the drawings

Fig. 1 is a kind of sectional view of Amorphous silicon flat-panel detectors pixel unit of the prior art；

Fig. 2 is the sectional view of one embodiment of photoelectric sensor pixel unit of the present invention；

Fig. 3 is the circuit diagram of one embodiment of photoelectric sensor of the present invention；

Fig. 4 is the sectional view of one embodiment outside lead of photoelectric sensor of the present invention；

Fig. 5 is a kind of vertical view of the embodiment of back-shaped structure of photoelectric sensor pixel unit of the present invention；

Fig. 6 is the sectional view of the AA` lines along Fig. 5；

Fig. 7 is a kind of vertical view of the embodiment of pectinate texture of photoelectric sensor pixel unit of the present invention；

Fig. 8 to Figure 16 is section view of the pixel unit in each step of one embodiment of manufacturing method of photoelectric sensor of the present invention Figure；

Figure 17 is a kind of vertical view of the embodiment of back-shaped structure of manufacturing method pixel unit of photoelectric sensor of the present invention；

Figure 18 is the sectional view of the BB` lines along Figure 17；

Figure 19 is a kind of vertical view of the embodiment of pectinate texture of manufacturing method pixel unit of photoelectric sensor of the present invention.

Specific embodiment

The existing universal volume of optical sensor is larger, and resolution ratio is relatively low, is difficult to the fingerprint recognition of portable device Field.

In order to solve the above technical problem, the present invention provides a kind of photoelectric sensor and its manufacturing method, the photoelectric transfer Sensor production cost is lower, resolution ratio higher, so as to be preferably applied for fingerprint recognition.

Present invention firstly provides a kind of photoelectric sensor, the photoelectric sensor includes substrate and on the substrate Pixel unit.

It elaborates below in conjunction with the accompanying drawings to the technical solution of photoelectric sensor of the present invention.

In the present embodiment, the photoelectric sensor is integrated in the array substrate of LCD panel, that is to say, that the light Electric transducer is identical with the part manufacture craft of the array substrate of LCD panel, in this way can will be for the photoelectric transfer of fingerprint recognition Sensor is integrated with LCD panel, is beneficial to reduce the volume using the portable device of photoelectric sensor such as mobile phone, but this hair Bright without limitation, in other embodiments, the photoelectric sensor can also be independent makes.

With reference to figure 2, the schematic cross-sectional view of one embodiment pixel unit of photoelectric sensor of the present invention is shown.Photoelectricity of the present invention Sensor includes：

Substrate 100, the material of the substrate 100 are translucent material, in the present embodiment, identical with LCD array substrate, institute Substrate 100 is stated as glass substrate.But the present invention is without limitation, in other embodiments, the substrate 100 can also be Its translucent material such as light-passing plastic is made.

In the present embodiment, the incident ray of photoelectric sensor is injected from 100 lower section of substrate and is penetrated above photoelectric sensor Go out, square 110 surface of object occurs in reflection and reflected light electric transducer on the photosensor, so substrate needs to use Translucent material is made to ensure that light can pass through.

Wherein substrate 100 includes multiple first areas for being used to form thin film transistor (TFT), is used to form photodiode Second area.

Photoelectric sensor includes the multiple pixel units being formed on the substrate, and it is brilliant that each pixel unit includes film Body pipe and lateral photodiode, specifically, each pixel unit includes：

Grid 101A positioned at 100 surface of first area substrate, the light shield layer positioned at 100 surface of second area substrate The edge of 101B, the light shield layer 101B have the first light hole 201 for exposing the substrate.

In the present embodiment, wherein grid 101A and light shield layer 101B to be formed to be performed etching to same film layer, so The material of grid 101A and light shield layer 101B, thickness all same.The grid 101A and light shield layer 101B is metal, optionally, It is identical with existing LCD array technology, the material of the grid and light shield layer 101B can be the metals such as molybdenum, aluminium, niobium or wherein Several alloys, the grid 101A and light shield layer 101B in such photoelectric sensor can be brilliant with the film in LCD array substrate Body tube grid is made simultaneously.

The effect of the grid 101A is for the grid of thin film transistor (TFT) in photoelectric sensor of the present invention, light shield layer 101B Effect be to block incident light below substrate to enter photodiode, have in light shield layer 101B and expose the substrate 100 the first light hole 201 so that light can the first light hole 201 enter pixel unit.

It should be noted that in the present embodiment, the incident ray of photoelectric sensor is injected from 100 lower section of substrate and from light It is projected above electric transducer, it is therefore desirable to which light shield layer 101B blocks light incident below substrate, in other embodiments, photoelectricity The incident ray of sensor can also be incident above pixel unit, under such circumstances, can not also set light shield layer 101B.

It should be noted that in order to ensure the occlusion effect in light shield layer 101B to light below substrate 100, such as Fig. 2 institutes Show, light shield layer 101B can be slightly above the second area of substrate 100.

It should be noted that in the present embodiment, multiple pixel units on substrate 100 are arranged in array, such as Shown in Fig. 2, the first light hole 201 is located at the substrate frontside edge of second area, and actually the first light hole 201 is located at shown in Fig. 2 The light shield layer 101B of pixel unit and the grid or light shield layer of adjacent pixel unit between, but the present invention to the first light hole 201 specific location in light shield layer 101B is not limited, and the first light hole 201 may be located on the middle area of light shield layer 101B Domain.

Since the aperture of the first light hole 201 can influence the maximum incident angle degree of incident ray, optionally, described first is logical The aperture of unthreaded hole 201 is in the range of 0 to 10 microns.

It is covered in first insulating layer in the first light hole 201 and surface of grid 101A and light shield layer 101B. First insulating layer is used for the other structures electrical isolation for making grid 101A, light shield layer 101B and 102 top of the first insulating layer.

In the present embodiment, the material of first insulating layer 102 be silicon nitride, silicon nitride be in LCD array substrate Thin film transistor (TFT) in gate insulating layer generally use material so that the first insulating layer 102 in photoelectric sensor of the present invention With gate insulating layer in the thin film transistor (TFT) in LCD array substrate can synchronize formed, in other embodiments, described first absolutely The material of edge layer 102 can also be silica or spin-on material.It should be noted that since the first light hole 201 has thang-kng Effect, and the first insulating layer fills the first light hole 201, to ensure the thang-kng of the first light hole 201, the first insulating layer 102 material need to be translucent material.

Intrinsic semiconductor layer 103 positioned at 102 surface of the first insulating layer, 103 edge of the intrinsic semiconductor layer tool There is the second light hole 202 right over first light hole 201.

First light hole, 201 and second light hole 202 forms thang-kng structure, and the light sent out below substrate passes through logical Photo structure is projected to above pixel unit, so that the photodiode can detect the light that the light is reflected by finger, To carry out fingerprint recognition.

In other embodiments, it when the incident ray of photoelectric sensor is incident above pixel unit, can be not provided with The thang-kng structure.

In the pixel unit of the present invention, part intrinsic semiconductor layer 103 is used as the raceway groove of thin film transistor (TFT), and part is intrinsic Semiconductor layer 103 is used as the light absorbing layer of lateral photodiode.

In the present embodiment, the material of the intrinsic semiconductor layer 103 is thin in intrinsic amorphous silicon, with LCD array substrate The material identical of the channel layer of film transistor so that intrinsic semiconductor layer 103 and LCD array base in photoelectric sensor of the present invention Channel layer can synchronize to be formed in thin film transistor (TFT) in plate.Intrinsic amorphous silicon is in be usually used in depositing on a glass substrate one Kind semi-conducting material, but the present invention is not limited the material of intrinsic semiconductor layer 103.

Since intrinsic semiconductor layer 103 will also be as the light absorbing layer of lateral photodiode, so in the present embodiment In, 103 edge of intrinsic semiconductor layer has the second light hole 202 being located at right over first light hole 201, so that substrate The incident light in 100 lower sections passes through, and the second light hole 202 is located at 103 edge of intrinsic semiconductor layer, i.e., positioned at picture shown in Fig. 2 Between the intrinsic semiconductor layer 103 of plain unit and the intrinsic semiconductor layer 103 of adjacent pixel unit, but the present invention is logical to second Unthreaded hole 202 is not limited in the specific location of intrinsic semiconductor layer 103, to ensure that the second light hole 202 is located at the first light hole 201 tops, in other embodiments, second light hole 202 may be located on the intermediate region of intrinsic semiconductor layer 103. Optionally, the second light hole 202 is identical with the aperture of the first light hole 201, in the range of 0 to 10 microns.

The first discrete conductive structure on 103 surface of the intrinsic semiconductor layer on first area substrate 100 301st, the second conductive structure 302, compared with first conductive structure 301, second conductive structure 302 is closer to the lining The second area at bottom 100, first conductive structure 301 include the first doped semiconductor being located in intrinsic semiconductor layer 103 Layer 104A and first electrode layer 105A, second conductive structure 302 include the be located in intrinsic semiconductor layer first doping half Conductor layer 104B and first electrode layer 105B, the first conductive structure 301, the second conductive structure 302 are formed to be synchronous.Described first Conductive structure 301 is used as the source configuration of the thin film transistor (TFT), and second conductive structure 302 is used as the thin film transistor (TFT) Drain electrode structure.

It should be noted that there is spacing between the first conductive structure 301, the second conductive structure 302 in the present embodiment, Raceway groove of the intrinsic semiconductor layer 103 as thin film transistor (TFT) between first conductive structure 301, the second conductive structure 302.

It should be noted that it is identical with the source level structure of the thin film transistor (TFT) in LCD array substrate, drain electrode structure, first Electrode layer 105A, first electrode layer 105B material for metal, it is optionally, identical with existing LCD array technology, it is described, first Electrode layer 105A, first electrode layer 105B material can be metals or wherein several alloys such as molybdenum, aluminium, niobium, such photoelectricity First electrode layer 105A, first electrode layer 105B in sensor can leak electricity with the thin film transistor (TFT) source in LCD array substrate Pole is made simultaneously.The first electrode layer in first electrode layer 105A and the second conductive structure 302 in first conductive structure 301 105 effect is the drain structure for being used separately as thin film transistor (TFT), the electrode of source configuration, for input or output voltage.Institute The material for stating the first doping semiconductor layer 104 is N-type non-crystalline silicon, and the effect of the first doping semiconductor layer 104 is to improve the first electricity Pole layer 105A, first electrode layer 105B and the contact performance of intrinsic semiconductor layer 103.Such first conductive structure 301, second are led Intrinsic semiconductor layer 103 and grid 101A structures between electric structure 302, the first conductive structure 301 and the second conductive structure 302 Into the primary structure of the pixel unit thin film transistor (TFT) of the present invention.

The medium being covered in first conductive structure 301, the second conductive structure 302 and intrinsic semiconductor layer 103 Layer 106 has the opening 203 through the dielectric layer, institute in the dielectric layer 106 on second area substrate 100 It states opening 203 and exposes the intrinsic semiconductor layer 103.In the present embodiment, relative to the first light hole 201, the second light hole 202, the opening 203 is closer to second conductive structure 302.

Specifically, in the present embodiment, the material of the dielectric layer 106 is silicon nitride, and silicon nitride is and LCD array substrate In thin film transistor (TFT) in source and drain insulating layer generally use material so that the first insulating layer in photoelectric sensor of the present invention 102 with source and drain insulating layer in the thin film transistor (TFT) in LCD array substrate can synchronize formed, in other embodiments, given an account of The material of matter layer 106 can also be silica or spin-on material.

It should be noted that since the second light hole 202 has the function of thang-kng, and in the present embodiment, dielectric layer 106 exists While intrinsic semiconductor layer 103 is covered, the second light hole 202 is filled, to ensure the thang-kng of the second light hole 202, is situated between The material of matter layer 106 need to be translucent material.

Second doping semiconductor layer 107A, the second electrode lay on 106 surface of dielectric layer on first area substrate 100 The the second doping semiconductor layer 107B sequentially formed, the second electrode lay 108B in 108A and the opening 203, described second Electrode layer 108 exposes second light hole 202, the second electrode lay 108A and the second electrode lay in the opening 203 108B is electrically connected.The second doping semiconductor layer 107A, the second doping semiconductor layer 107B are formed to be synchronous, second electricity Pole layer 108A is formed with the second electrode lay 108B to be synchronous.

Due to the limitation of the exposure technology in actual fabrication, the sequentially form second doping half in the opening 203 Conductor layer 107B, the second electrode lay 108B can extend to the edge of 203 upper ends of the opening, but the length very little extended out, It can the second electrode lay 108B at the edge of 203 upper ends of the opening and the dielectric layer 106 on first area substrate 100 Lead is set between the second electrode lay 108A on surface, so that the second electrode lay 108A and the second electrode lay 108B electrical connections.

In the present embodiment, pixel unit further includes：It is covered in the dielectric layer 106, the second electrode lay 108A and second The second insulating layer 109 on electrode layer 108B surfaces, the material of the second insulating layer 109 are translucent material, specifically, described the The material of two insulating layers 109 can be silicon nitride, silica or spin-on material.The effect of the second insulating layer 109 is protection The primary structure of photodiode and thin film transistor (TFT), and make photodiode and thin film transistor (TFT) and other structures exhausted Edge.

In the present embodiment, pixel unit further includes：The second electrode lay 108B surfaces in the opening 203 connect Touched electrode (not shown), the material of the contact electrode is tin indium oxide or zinc oxide, and setting contact electrode is advantageous in that, energy Enough reliabilities of enhancing the second electrode lay 108B, the corrosion resistance of the oxidation conductive material such as tin indium oxide or zinc oxide is stronger, connects Touched electrode covers 108 upper surface of the second electrode lay, and the second electrode lay 108B can be caused not allow oxidizable and influence property Can, but whether the present invention is to setting contact electrode not to be limited.

In the present embodiment, the second doping semiconductor layer 107A, the material of the second doping semiconductor layer 107B are non-for p-type Crystal silicon.The second electrode lay 108A, the second electrode lay 108B material for metal material, optionally, metal material can be The metals such as molybdenum, aluminium, niobium or wherein several alloys.

The the second doping semiconductor layer 107B, the second electrode lay 108B that sequentially form being located in opening 203 is formed Third conductive structure 303, third conductive structure 303 are used as the anode of photodiode in photoelectric sensor pixel unit of the present invention Structure, wherein, the second doping semiconductor layer 107B of P-type non-crystalline silicon and 103 phase of intrinsic semiconductor layer in third conductive structure 303 Contact is the anode of photodiode, and the second electrode lay 108B in third conductive structure 303 passes through lead and accesses signal electricity Pressure, fixed negative potential is provided for anode.

Second conductive structure 302 also serves as lateral two pole of photoelectricity in addition to the drain electrode structure as thin film transistor (TFT) The cathode construction of pipe；Intrinsic semiconductor 103 between the third conductive structure 303 and second conductive structure 302 Light absorbing layer as photodiode.The cathode construction of photodiode, anode construction, light absorbing layer constitute one in this way Lateral photodiode.The second electrode lay 108 in the third conductive structure 303 connects fixed negative potential.

The electricity of the second doping semiconductor layer 107A on 106 surface of dielectric layer on first area substrate 100 and second Pole layer 108A forms the 4th conductive structure 304, and the 4th conductive structure 304 can play interception, prevent other pixels Light above unit enters this pixel unit and brings interference, and the light above his pixel unit is prevented to be irradiated to first and is led The raceway groove of intrinsic semiconductor layer 103, i.e. thin film transistor (TFT) between electric structure 301, the second conductive structure 302.In the present embodiment In, the second electrode lay 108A in the 4th conductive structure 304 and the second electrode lay in the third conductive structure 303 108B is electrically connected, and the current potential of the second electrode lay 108A in the 4th conductive structure 304 and the third in this way is conductive The current potential of the second electrode lay 108B in structure 303 is identical, is fixed negative potential, such 4th conductive structure 304 and Two conductive structures 302 form storage capacitance, are conducive to the holding of the negative electrical charge of the accumulation of lateral photodiode cathode.This Outside, in the present embodiment, light shield layer 101B also accesses external voltage, and the external voltage of light shield layer 101B is in the range of 0V to -10V It is interior, so as to form another storage capacitance with the second conductive structure 302, further improve the tired of lateral photodiode cathode The holding effect of accumulated charge.In other embodiments, light shield layer 101B can also be connected with grid, i.e., light shield layer 101B's is external Voltage is identical with grid, can also play the role of with the second conductive structure 302 form storage capacitance, and light shield layer 101B also with Grid, which is connected, enables to 103 lower section of intrinsic semiconductor layer to be blocked completely, and the light below substrate is utmostly avoided to enter Intrinsic semiconductor layer 103.

It should be noted that in other embodiments, the 4th conductive structure 304 can also be not provided with, but other are set The structure of storage capacitance, the invention is not limited in this regard can be formed with the second conductive structure 302.

It should be noted that for succinct signal in Fig. 2, the ruler of the second conductive structure 302 and the first conductive structure 301 It is very little close, actually since the second conductive structure 302 also serves as the cathode of photodiode, with the second electrode lay 108, light shield layer 101B forms storage capacitance to store negative electrical charge, and to make storage capacitance larger to improve magnitude of the stored charge, optionally, second is conductive The area of structure 302 is more than the area of the first conductive structure 301.

With reference to figure 2, the operation principle of the pixel unit of photoelectric sensor of the present invention is as follows：The third conductive structure 303 In the second electrode lay 108 access fixed negative voltage, the first electrode layer 105 in first conductive structure 301 accesses just Voltage or no-voltage, when the grid 101A accesses of thin film transistor (TFT) are more than the scanning voltage of threshold voltage, thin film transistor (TFT) is beaten It opens, the charge of the second electrode lay 105A in the first conductive structure 301 is transferred to the second electrode lay in the second conductive structure 302 In 105B, the basic voltage is more than the signal voltage, is loaded with negative bias in lateral photodiode in this way.Come Pass through the first light hole 201, the second light hole 202 to second insulating layer from the light (as shown in phantom in Figure 2) below substrate 109 upper surfaces, object 110 (such as finger) surface above pixel unit are reflected, and the light of reflection, which is injected, is located at institute It states in the intrinsic semiconductor 103 between opening 203 and second conductive structure 302, negative electrical charge is constantly in the second conductive structure It is accumulated in the first doping semiconductor layer 104B in 302, second doping semiconductor layer of the hole constantly in the opening 203 It is accumulated in 107B.

Since the second conductive structure 302 also serves as the drain electrode structure of thin film transistor (TFT), (the grid when thin film transistor (TFT) is opened Pole 101A accesses scanning voltage), (second is conductive for source configuration (the first conductive structure 301) and the drain electrode structure of thin film transistor (TFT) Structure 302) it connects, the negative electrical charge accumulated in the second conductive structure 302 enters the first conductive structure 301, Jin Ertong by raceway groove It crosses the first conductive structure 301 to export, since light intensity can influence the first doping semiconductor layer in the second conductive structure 302 The quantity of electric charge accumulated in 104B, so as to influence the output current of the source configuration of thin film transistor (TFT) when thin film transistor (TFT) is opened, when When thin film transistor (TFT) is opened, the charge of drain electrode structure accumulation empties, while by the first electrode layer in the first conductive structure 301 The basic voltage of 105A is transferred to the second electrode lay 105B in the second conductive structure 302 so that in the second conductive structure 302 The second electrode lay 105B restores zero potential or positive potential, and when thin film transistor (TFT) is closed, negative electrical charge is again constantly in the second conduction It is accumulated in the first doping semiconductor layer 104B in structure 302.It can by the output current of the source configuration of thin film transistor (TFT) Reflect the light intensity that transverse diode receives, complete conversion of the optical signal to electric signal, and it is defeated to pass through thin film transistor (TFT) in this way Go out, and the rough surface of finger print is different to the reflected intensity of light, the light intensity for detecting lateral photodiode Difference, correspondingly, the electric signal of thin film transistor (TFT) output are also different, and then realize fingerprint recognition.

It should be noted that the light shield layer 101B by the opening 203 and second between conductive structure 302 intrinsic half Conductor layer 102 is blocked completely, and the intrinsic semiconductor layer 102 for 203 lower sections that are open also is blocked completely, to ensure to inject below substrate Light will not enter intrinsic semiconductor layer 103.By in this present embodiment, light shield layer 101B is removed in 102 lower section of intrinsic semiconductor layer It is not provided with other film layers that can be shut out the light outside, therefore, light shield layer 101B needs as possible that 103 lower section of intrinsic semiconductor layer is complete It blocks entirely, to improve detection accuracy.In other embodiments, below light shield layer 101B or light shield layer 101B and intrinsic semiconductor Other light-shielding structures can also be set between layer 103, further to strengthen shaded effect.The photoelectric sensor of the present invention includes Multiple above-mentioned pixel units, the multiple pixel unit are arranged in array-like.

Photoelectric sensor of the present invention further includes：Protective layer (not shown) above the multiple pixel unit, it is described Protective layer is made of translucent material.Setting protective layer is advantageous in that, it is possible to reduce the damage of outer bound pair photodiode.

The present embodiment photoelectric sensor, which further includes, is set to backlight (not shown) below substrate, what the backlight was sent out Light passes through the thang-kng arrangement projects in pixel unit to pixel unit top.I.e. the present embodiment photoelectric sensor has what is carried Light source, light source are located at the lower section of photoelectric sensor.The light source that the prior art is mostly used in the sensor of fingerprint recognition carrys out autobiography Above sensor, to ensure that the light that light source is sent out can enter in the pixel unit under finger covering, lead to above pixel unit It is standing to have lens or prism, but the thickness of lens or prism is larger, and lens can be bent incident ray, each pixel list The area of member is different from the area for the body surface that pixel unit is detected, and the light uniformity into sensor is poor, is also easy to It is influenced by external ambient light.And light source is located at the lower section of photoelectric sensor in the present embodiment, so on the photosensor Fang Wuxu lens make photoelectric sensor whole more frivolous, and enter the light of photoelectric sensor substantially along straight line, each picture The area of plain unit is 1 with the area ratio of body surface that pixel unit is detected:1, light uniformity is preferable, can be more preferable Ground avoids influence of the external environmental light to photoelectric sensor.

It should be noted that it is used to form the embodiment of photoelectric sensor and LCD panel simultaneously for same substrate, due to Current LCD is substantially all using transmissive display, and backlight is equipped with below array substrate, and backlight generally uses LED formulas Or cold-cathode fluorescent tubular type, therefore optical sensor of the present invention can also be using the back of the body of the backlight of LCD as photoelectric sensor Tabula rasa.So as to improve the integrated level of photoelectric sensor of the present invention.

To sum up, photoelectric sensor of the present invention can be used for fingerprint recognition, when finger is placed on the upper of photoelectric sensor of the present invention Surface, the light projected from 100 direction of substrate are irradiated to finger surface and form reflection.The light of reflection is by lateral two pole of photoelectricity Pipe absorption is converted into electric signal.Uneven due to fingerprint, the signal of raised position reflection is strong, the region reflection of recess Signal is weak, so as to make the signal strength that optical sensor exports different.

The vertical stratification of photodiode in device is surveyed relative to prior art amorphous silicon flat panel, in photoelectric sensor of the present invention Photodiode using transversary, cathode construction, the anode construction of lateral photodiode are located at respectively intrinsic partly leads Different location on body layer, the intrinsic semiconductor layer between cathode construction, anode construction serve as light absorbing layer so that lateral light The thickness of electric diode is smaller, and the vertical stratification of the photodiode in existing Amorphous silicon flat-panel detectors is located at film The top of film layer where source-drain electrode in transistor, and in the lateral photodiode of photoelectric sensor of the present invention, due to described The anode construction of lateral photodiode is located in the opening 203, and intrinsic semiconductor layer 103 is respectively positioned on cathode construction On, so the anode construction of the lateral photodiode is set with cathode construction using lateral, just correspond in film crystalline substance The thickness of the second doping semiconductor layer 107, the second electrode lay 108 and dielectric layer 106 has been superimposed above the source-drain electrode of body pipe, this Three layers of film thickness is about 200 nanometers, and far smaller than (about 1 is micro- for the height of the vertical stratification of the photodiode in flat panel detector Rice) so that the thickness of lateral photodiode is smaller, and under the incident light of similary angle, incident light is in pixel unit Light path is shorter so that pixel unit is high to the binding character of light, does not allow to be also easy to produce interference between adjacent pixel unit, be beneficial to Improve the resolution ratio of photoelectric sensor.And the upper surface of the light absorbing layer of intrinsic semiconductor layer can directly be shone by light It penetrates, is beneficial to the charge accumulation of lateral photodiode.

In addition, the second conductive structure 302 is used as the drain electrode structure of the thin film transistor (TFT), lateral two pole of photoelectricity is also served as The cathode construction of pipe, i.e., lateral photodiode stored charge directly on the drain electrode structure of thin film transistor (TFT), and with thin Film transistor unlatching exports signal, and in the present embodiment, 203 bottom margins of the opening are leaned on the second conductive structure 302 The interval S at 203 edges of nearly opening is mutual with photodiode relative to prior art TFT in the range of 1 to 5 microns Mutually independent structure, thin film transistor (TFT) of the invention and lateral photodiode distance closer to saving pixel unit in this way Shared area so that the smaller that pixel unit can make, and then independent identification is carried out to the finger areas of more small area, Improve the resolution ratio of photoelectric sensor.

Further, the photodiode of photoelectric sensor of the present invention be transversary, will not be formed as longitudinal diode that The bigger lug boss of the height and the width of sample so that photoelectric sensor pixel unit of the present invention is relatively flat, therefore dielectric layer 106 thickness can be relatively thin, further improves the anti-interference between pixel unit, and the thickness of dielectric layer 106 reduces The storage capacitance that the 4th conductive structure 304 and the second conductive structure 302 above 100 first area of substrate are formed can be caused to increase Greatly, the magnitude of the stored charge of the first doping semiconductor layer 105B in the second conductive structure 302 can be improved.

It should be noted that photoelectric sensor of the present invention further includes a plurality of leads, for being electrically connected multiple pixel units It connects, with reference to figure 3, shows the circuit diagram of photoelectric sensor pixel unit array of the present invention.

The a plurality of leads includes：

The a plurality of grid lead 401 arranged along line direction, one end of every grid lead 401 and external drive circuit Electrical connection, often the grid 101A of the thin film transistor (TFT) 001 of row pixel unit is electrically connected with the grid lead 401 gone together, and is Grid 101A provides scanning voltage, and the scanning voltage is in the range of -10 to 15V.It should be noted that a plurality of grid lead 401 scanning voltages provided are progressive scan mode, i.e., since the first row, often the grid of row pixel unit sequentially enters scanning Time.In order to ensure that the quantity of electric charge of the accumulation of each pixel unit is only influenced by light intensity, the every scanning voltage of row pixel unit It is all identical with sweep time.

A plurality of the first lead 402 arranged along column direction, one end of every first lead 402 and external drive circuit Electrical connection, the source electrode (first electrode layer in the first conductive structure 301 of the thin film transistor (TFT) 001 of each column pixel unit 105) it is electrically connected with first lead of same column, basis is provided for the first electrode layer 105 in first conductive structure 301 Voltage, the basic voltage is in the range of 0 to 3V.In the present embodiment, the basic voltage is fixed value.

A plurality of the second lead 403 arranged along column direction, one end of every second lead 403 and external drive circuit It is electrically connected, the anode electrode (second electrode of third conductive structure 303 of lateral photodiode 002 in each column pixel unit Layer 108B) it is electrically connected with second lead 402 of same column, provide signal voltage, the letter for the second electrode lay 108B Number voltage is in the range of 0 to -10V.In the present embodiment, the signal voltage is fixed value.Due to entire pixel unit group Into array in the second electrode lay 108B signal voltage it is all identical, therefore a plurality of second lead 403 can be with outside pel array Collection is combined into a lead and input voltage.It should be noted that since the signal voltage of all pixels unit is 0 to -10V In the range of and the value of signal voltage immobilize, it is possible to the second lead 403 of each row is converged on the outside of pixel unit array It integrates a lead and is connected with external power supply.

It should be noted that due in the present embodiment, contact electrode is also formed on the second electrode lay 108A, therefore can To be electrically connected the second electrode lay 108B of all pixels unit using contact electrode, so as to only need the second lead 403 and light Contact electrode electrical connection in electric transducer in any position, just can provide the second electrode lay 108B of all pixels unit Signal voltage.

The a plurality of third lead (not shown) arranged along column direction, one end of the every third lead and external driving electricity Road is electrically connected or is electrically connected with the second lead 402, the light shield layer 101B of each column pixel unit photodiode 002 with it is same The third lead electrical connection of row, external voltage is provided for light shield layer 101B so that light shield layer 101B and with it is second conductive Structure 302 forms another storage capacitance.The external voltage is in the present embodiment, described external in the range of 0 to -10V Voltage is fixed value.It should be noted that in other embodiments, the third lead can also be not provided with, but makes shading Layer 101B is electrically connected with grid 101A, and scanning voltage is provided for light shield layer 101B, it is also possible that light shield layer 101B and with second Conductive structure 302 forms another storage capacitance.

Fig. 4 show grid lead 401, the first lead 402, the second lead 403 the pixel unit array external Sectional view schematic diagram.

With reference to figure 4, in photoelectric sensor of the present invention, in the array external of pixel unit composition, it is respectively equipped with turn-on grid electrode Lead 401, the first lead 402, the grid via 501 of the second lead 403, the first via 502, the second via 503.

Grid is covered each by the present embodiment, in the grid via 501, the first via 502, the second via 503 to lead Electric layer 601, the first conductive layer 602, the second conductive layer 603, by grid lead 401, the first lead 402, the second lead 403 with External drive circuit is electrically connected.Specifically, in the present embodiment, the grid conducting layer 601, the first conductive layer 602, second are led The material of electric layer 603 is tin indium oxide.The terminal of extraneous driving circuit can be cohered in grid conducting layer 601, the first conductive layer 602nd, the second conductive layer 603 provides voltage for grid lead 401, the first lead 402, the second lead 403.Tin indium oxide is set Grid conducting layer 601, the first conductive layer 602, the second conductive layer 603 be advantageous in that the inoxidizability of tin indium oxide is strong, Under the covering of tin indium oxide, grid lead 401, the first lead 402, the second lead 403 are less likely to occur to aoxidize, so as to improve Grid lead 401, the first lead 402, the second lead 403 reliability.But whether the present invention is to setting grid conducting layer 601st, the first conductive layer 602, the second conductive layer 603 are not limited, and in other embodiments, can also be not provided with grid conducting layer 601st, the first conductive layer 602, the second conductive layer 603, the terminal of extraneous driving circuit can directly cohere grid via 501, Grid lead 401 that first via 502, the second via 503 expose, the first lead 402, on the second lead 403.

It should be noted that in other embodiments, driving chip can also be used and read chip to lateral photoelectricity Diode is driven and reads, specifically, on the substrate 100 bind driving chip and read chip, make grid lead 401, First lead 402, the second lead 403 are electrically connected with dynamic chip and reading chip, and driving chip and reading chip is made to pass through flexibility Circuit board is connected with external power supply.The present invention is not limited the driving of lateral photodiode and playback mode.

With reference to the operation principle of above-mentioned photoelectric sensor pixel unit, the area of pixel unit is determines photoelectric sensor The element of resolution ratio, and the interference between adjacent pixel unit can also influence the resolution ratio of photoelectric sensor.Reduction can be passed through Pixel cell area reduces the interference between adjacent pixel unit to improve the resolution ratio of photoelectric sensor.

Therefore, to further improve resolution ratio, in another embodiment, photoelectricity in photoelectric sensor pixel unit of the present invention The anode construction of diode surrounds hollow structure with cathode construction, can reduce the interference between adjacent pixel unit.It ties below Fig. 5, Fig. 6 is closed to illustrate another embodiment.Fig. 5, Fig. 6 are please referred to, Fig. 5 is that the vertical view of pixel unit in another embodiment is saturating View, Fig. 6 are sectional views of the Fig. 5 along AA` lines, it should be noted that in order to by the anode construction of lateral photodiode with The position relationship signal of cathode construction is clear, and the 4th semiconductor structure 304 is omitted in Figure 5.

As shown in Figure 5, Figure 6, in the present embodiment, the first area of substrate 100 surrounds second area, and light shield layer 101B is The rectangle of closing, first light hole 201 are located at light shield layer 101B centers.

The opening 203 is located at the center of light shield layer 101B, and the opening 203 is rectangle, and second in the opening 203 Doping semiconductor layer 107, the second electrode lay 108 are the rectangle of closing, i.e. third conductive structure 303 is the rectangle of closing, in institute State the second doping semiconductor layer 107B in opening 203, the second electrode lay 108B bottom centre forms third light hole 204, institute A part of the third light hole 204 as thang-kng structure is stated, exposes the second light hole 204, second conductive structure 302 is with institute It states and surrounds the frame-type of closing centered on opening 203 so that the second conductive structure 302, third conductive structure 303 are in back-shaped structure. It should be noted that the 4th conductive structure 304 (not showing in Fig. 5) is above the second conductive structure 302, equally with the opening The frame-type of closing is surrounded centered on 203, so that the throwing of the 4th conductive structure 304 and the second conductive structure 302 in 100 plane of substrate Shadow overlapping area is larger so that the 4th conductive structure 304 and the storage capacitance that the second conductive structure 302 is formed are larger, improve the The quantity of electric charge stored in the second doping semiconductor layer 105B in two conductive structures 302.

It should be noted that as shown in figure 5, first conductive structure 301 only as the source configuration of thin film transistor (TFT), Therefore the first conductive structure 301 is located at 302 side of the second conductive structure, and 302 area of opposite second conductive structure is smaller, together Sample, the grid 101A is positioned at the first conductive structure 301,302 lower section of the second conductive structure, and opposite second conductive knot 302 area of structure is smaller.

In the present embodiment, back-shaped structure can be more preferable to light binding effect.In back-shaped structure, from 100 side of substrate It can only be logical from the first light hole 201, second of the middle section of back-shaped structure to the light (dotted line with the arrow in Fig. 6) sent out Unthreaded hole 202, third light hole 204 are incident, and the light of other positions can be blocked by light shield layer 101B and cannot be irradiated to object table On the light absorbing layer of face and lateral photoelectric diode.Due to the first light hole 201, the second light hole 202, third light hole 204 Positioned at the center of back-shaped structure, relative to other structures, the incident ray across back-shaped structure is more concentrated, and in pixel list In the case that first occupied area is constant, the angle smaller of incident ray, when incident ray reflects on the surface of object, angle of reflection Degree is constrained by film thickness and incidence angle, can only be reflected into its corresponding pixel, it is not easy to other pixels are scattered to, so as to Improve the precision of photoelectric sensor.First light hole 201, the second light hole 202, third light hole 204 aperture D2 It is identical, in the range of 0 to 10 microns, the first light hole 201, the second light hole 202, third light hole 204 aperture D2 phases Together, can be stronger to the binding character of incident light, when the first light hole 201, the second light hole 202, third light hole 204 It, can be with according to the difference in height D1 of the second electrode lay 108A and the substrate 100 of 203 bottoms of the opening when aperture D2 is 10 microns Show that incident angle θ is not more than 4 degree, the thickness of usual protective layer 111 can be much thicker than second insulating layer 109, therefore incidence angle θ Smaller, when incident ray reflects on the surface of object, the angle of reflection light is also smaller, the reflection light above this pixel unit It is easier to be constrained in this pixel unit.When photoelectric sensor of the present invention is used for fingerprint recognition, due to finger surface bumps It is uneven, it is easy to light be made to generate diffusing reflection, reduce incident angle θ, and then the angle for reducing reflection light is particularly important.Separately Outside, as shown in fig. 6, under conditions of the incident angle θ of light is certain, due to photoelectric sensor of the present invention pixel unit compared with Thin, light path of the incident ray in pixel unit is shorter, and the incident ray of this pixel unit is more difficult to inject adjacent pixel list In member, and then improve the resolution ratio of photoelectric sensor.

In other embodiments, the anode construction of the lateral photodiode and cathode construction can also be in opposite Pectinate texture.With reference to figure 7, the birds-eye perspective of photoelectric sensor pixel unit another embodiment of the present invention is shown, Fig. 7's cuts open View can be with reference chart 2.It should be noted that in order to by the lateral anode construction of photodiode and the position of cathode construction Relationship signal is clear, and the second electrode lay 108A of the 4th semiconductor structure 304 is omitted in the figure 7.

Second conductive structure 302 is in the pectination with comb part 701, the second doping half in the opening 203 Conductor layer 107, the second electrode lay 108 (i.e. third conductive structure 303) are in the pectination with comb part 702, and third is conductive The comb part 702 of structure 303 and the comb part 701 of the second conductive structure 302 are oppositely arranged and are alternately arranged.4th is conductive Structure 304 is located at 302 top of the second conductive structure, and similary is in the pectination with comb part, so i.e. lateral two pole of photoelectricity The anode construction of pipe is in opposite pectinate texture with cathode construction pipe.The anode construction and cathode construction of lateral photodiode It is advantageous in that in opposite pectinate texture, the 4th conductive structure 304 can be increased with the second conductive structure 302 in parallel substrate The overlapping area of the projection of 100 surface directions, and then increase what the 4th conductive structure 304 and the second conductive structure 302 were formed Storage capacitance, and then improve the quantity of electric charge stored in the first doping semiconductor layer 105B in the second conductive structure 302.

The present invention also provides a kind of manufacturing method of photoelectric sensor, using the manufacturing method of photoelectric sensor of the present invention, It can produce but be not limited to photoelectric sensor proposed by the present invention, equally, photoelectric sensor proposed by the present invention is not limited to make It is obtained with the manufacturing method making of photoelectric sensor provided by the invention.

Fig. 8 to Figure 16 shows the sectional view of each step of one embodiment of manufacturing method of photoelectric sensor of the present invention, under Face elaborates to the technical solution of the manufacturing method of photoelectric sensor of the present invention with reference to Fig. 8 to Figure 16.It should be noted that The manufacturing method of photoelectric sensor of the present invention generally comprises：Substrate is provided, forms multiple pixel units over the substrate, wherein Each pixel unit includes thin film transistor (TFT) and photodiode, in the following description, by taking a pixel unit as an example, to this The manufacturing method of invention photoelectric sensor illustrates.

With reference to figure 8, it is light-transmissive substrates to provide substrate 100`, the substrate 100`.The substrate 100` includes being used to form The first area of thin film transistor (TFT), the second area for being used to form photodiode.

Specifically, in the present embodiment, the material of the substrate 100` is translucent material, in the present embodiment, with LCD gusts Row substrate is identical, and the substrate 100` is glass substrate.But the present invention is without limitation, it is in other embodiments, described Substrate 100` its translucent material can also be made of light-passing plastic etc..The incident ray of photoelectric sensor of the present invention is from substrate 100` Lower section is injected and is projected above photoelectric sensor, and square body surface occurs to reflect and be reflected back photoelectricity on the photosensor In sensor, so substrate needs that translucent material is used to be made to ensure that light can pass through.

With continued reference to Fig. 8, the grid 101A` positioned at first area substrate 100` surfaces, position are formed on the substrate 100 Expose the substrate 100` in the light shield layer 101B` and light shield layer 101B` on second area substrate 100` surfaces first is logical Unthreaded hole 201`.

Specifically, the first metal layer (not shown) is first covered on the substrate 100`.

In the present embodiment, it is described using magnetron sputtering method in substrate 100` surfaces deposition the first metal layer 101` The effect of the first metal layer 101` is to form grid, light shield layer.It is identical with existing LCD array technology, the first metal layer 101`'s Material can be the metals such as molybdenum, aluminium, niobium or wherein several alloys, the first metal layer 101` energy in such photoelectric sensor It is enough to be deposited simultaneously with the thin-film transistor gate material layer in LCD array substrate.

Specifically, photoresist layer (not shown) is formed on the first metal layer 101`, the is set on photoresist layer One mask plate, first mask plate have the pattern of corresponding grid 101A`, light shield layer 101B`, make photoresist layer graphical, Again using patterned photoresist layer as mask, the first metal layer 101` is performed etching to the surface for exposing the substrate 100`, Form grid 101A`, light shield layer 101B`.

In the present embodiment, wherein grid 101A` and light shield layer 101B` is performs etching and shape the first metal layer 101` Into so the material of grid 101A` and light shield layer 101B`, thickness all same.In addition, it can also be set on first mask plate The pattern of the thin-film transistor gate in corresponding LCD array substrate is put, so as to make grid 101A` and the shading in photoelectric sensor Layer 101B` can simultaneously be made with the thin-film transistor gate in LCD array substrate.

It should be noted that in the present embodiment, the incident ray of photoelectric sensor injected below substrate 100` and from It being projected above photoelectric sensor, it is therefore desirable to light shield layer 101B` blocks light incident below substrate, in other embodiments, The incident ray of photoelectric sensor can also be incident above pixel unit, under such circumstances, can not also form light shield layer 101B`。

The effect of the grid 101A` is for the grid of thin film transistor (TFT) in photoelectric sensor of the present invention, light shield layer The effect of 101B` is to block incident light below substrate, is formed at light shield layer 101B` edges and exposes the of the substrate 100` One light hole 201` so that light can enter pixel unit by the first light hole 201`.

It should be noted that in the present embodiment, multiple pixel units on substrate 100` are arranged in array, such as Shown in Fig. 8, the first light hole 201` is located at the substrate 100` edges of second area, and actually the first light hole 201` is located at Fig. 2 Between the light shield layer 101B` of shown pixel unit and the grid or light shield layer of adjacent pixel unit, but the present invention is to first Specific locations of the light hole 201` in light shield layer 101B` is not limited, and the first light hole 201` may be located on light shield layer The centre position of 101B`.

The aperture of first light hole 201` can influence the maximum incident angle degree of incident ray, optionally, first thang-kng The aperture of hole 201` is in the range of 0 to 10 microns.

With reference to figure 9, covered in the first light hole 201` and on the surface of grid 101A` and light shield layer 101B` First insulating layer 102`.

Specifically, in the present embodiment, using plasma enhancing chemical vapour deposition technique, in first light hole Depositing first insulator layer 102` in the 201` and surface of thin-film transistor gate 101A` and light shield layer 101B`, described The material of one insulating layer 102` is silicon nitride, and silicon nitride is leads to gate insulating layer in the thin film transistor (TFT) in LCD array substrate Frequently with material so that the first insulating layer 102` in photoelectric sensor of the present invention and the film crystal in LCD array substrate Gate insulating layer can synchronize to be formed in pipe, and in other embodiments, the material of the first insulating layer 102` can also be oxygen SiClx or spin-on material.It should be noted that since the first light hole 201` has the function of thang-kng, and the first insulating layer 102` First light hole 201` is filled, to ensure the thang-kng of the first light hole 201`, the material of the first insulating layer 102` need to be light transmission Material.

With continued reference to Fig. 9, intrinsic semiconductor layer 103`. is formed on the first insulating layer 102` surfaces

Specifically, the material of the intrinsic semiconductor layer 103` is non-crystalline silicon, and plasma enhanced chemical gas may be used Phase sedimentation, in the first insulating layer 102` surfaces deposition intrinsic non-crystalline silicon.

In the pixel unit of the present invention, part intrinsic semiconductor layer 103` is used as the raceway groove of thin film transistor (TFT), and part is originally Levy the light absorbing layer that semiconductor layer 103` is used as photodiode.In the present embodiment, the material of the intrinsic semiconductor layer 103` The material identical of channel layer for the thin film transistor (TFT) in intrinsic amorphous silicon, with LCD array substrate so that photoelectric sensing of the present invention Intrinsic semiconductor layer 103` in device and channel layer in the thin film transistor (TFT) in LCD array substrate can synchronize formed.It is intrinsic non- Crystal silicon is in a kind of semi-conducting material for being usually used in depositing on a glass substrate, but the present invention is to intrinsic semiconductor layer 103`'s Material is not limited.Since intrinsic semiconductor layer 103` will also be as the light absorbing layer of photodiode.

Please continue to refer to Fig. 9, it is formed in described half intrinsic conductor layer 103` positioned at the first light hole 201` just Second light hole 202` of top.Specifically, in the present embodiment, by photoetching by the sheet above the first light hole 201` Semiconductor layer 103` removals are levied, to form the second light hole 202`.

The the second light hole 202` being located at right over the first light hole 201` formed in intrinsic semiconductor layer, is used Pass through in making light incident below substrate.Optionally, the second light hole 202` is identical with the aperture of the first light hole 201`, In the range of 0 to 10 microns.

First light hole, 201 and second light hole 202 forms thang-kng structure, and the light that the backlight is sent out passes through Above thang-kng arrangement projects to pixel unit, so that the photodiode can detect what the light was reflected by finger Light, to carry out fingerprint recognition.

In other embodiments, it when the incident ray of photoelectric sensor is incident above pixel unit, can not be formed The thang-kng structure.

With reference to figure 10, in the intrinsic semiconductor layer 103` surfaces deposited n-type non-crystalline silicon 104C`, in the N-type non-crystalline silicon Surface covering second metal layer 105C`.

Specifically, using plasma enhances chemical vapour deposition technique in the semiconductor layer surface deposited n-type non-crystalline silicon 104C` covers second metal layer 105C` using magnetron sputtering method, but the present invention is to forming N-type non-crystalline silicon 104C`, the second gold medal The specific method for belonging to layer 105C` is not limited.

With reference to figure 11, the intrinsic semiconductor layer 103` surfaces on the substrate 100` of first area form discrete first Conductive structure 301`, the second conductive structure 302`.

Specifically, patterned photoresist layer is formed on the N-type non-crystalline silicon 104C`, the first metal layer 105C`, it is right The N-type non-crystalline silicon 104C`, second metal layer 105C` are performed etching, removal part N-type non-crystalline silicon 104C`, the first metal layer 105C` forms the first conduction to intrinsic semiconductor layer 103`, N-type non-crystalline silicon 104C`, the first metal layer 105C` of reservation is exposed Structure 301`, the second conductive structure 302`.

Compared with the first conductive structure 301`, the second conductive structure 302` is closer to the of the substrate 100` Two regions, the first conductive structure 301` include the first doping semiconductor layer 104A` being located on intrinsic semiconductor layer 103` Include the first doped semiconductor being located in intrinsic semiconductor layer with first electrode layer 105A`, the second conductive structure 302` Layer 104B` and first electrode layer 105B`, the first doping semiconductor layer 104`A and the first doping semiconductor layer 104B` are N Type non-crystalline silicon 104C` is formed, and the first electrode layer 105` and first electrode layer 105B` are formed for second metal layer 105C`, i.e., First conductive structure 301`, the second conductive structure 302` are formed to be synchronous.The first conductive structure 301` is used as the film The source configuration of transistor, the second conductive structure 302` are used as the drain electrode structure of the thin film transistor (TFT).

It should be noted that between having between the first conductive structure 301`, the second conductive structure 302` in the present embodiment Away from ditches of the intrinsic semiconductor layer 103` as thin film transistor (TFT) between the first conductive structure 301`, the second conductive structure 302` Road.

It should be noted that it is identical with the source level structure of the thin film transistor (TFT) in LCD array substrate, drain electrode structure, first The material of electrode layer 105A` and first electrode layer 105B` are metal, optionally, identical with existing LCD array technology, described, the The material of one electrode layer 105A` and first electrode layer 105B` can be metals or wherein several alloys such as molybdenum, aluminium, niobium, in this way First electrode layer 105A` and first electrode layer 105B` in photoelectric sensor can be with the thin film transistor (TFT)s in LCD array substrate Source-drain electrode is made simultaneously.First conductive structure 301`, the first electrode layer 105A` of the second conductive structure 302`, first electrode The effect of layer 105B` is the source level structure for being used separately as thin film transistor (TFT), the electrode of drain electrode structure.First doped semiconductor The material of layer 104A` and the first doping semiconductor layer 104B` is N-type non-crystalline silicon, and the first doping semiconductor layer 104A` and first mixes The effect of miscellaneous semiconductor layer 104B` is to improve first electrode layer 105A`, first electrode layer 105B` intrinsic semiconductor layers 103` Contact performance.Such first conductive structure 301`, the second conductive structure 302`, the first conductive structure 301`, the second conductive structure Intrinsic semiconductor layer 103` and grid 101A` between 302` constitute the main of the pixel unit thin film transistor (TFT) of the present invention The primary structure of thin film transistor (TFT) in structure, with LCD array substrate is essentially identical.

With reference to figure 12, in the first conductive structure 301`, the second conductive structure 302` and intrinsic semiconductor layer 103` Upper blanket dielectric layer 106`.

Specifically, in the present embodiment, the material of the dielectric layer 106` is silicon nitride, and silicon nitride is and LCD array base The material of source and drain insulating layer generally use in thin film transistor (TFT) in plate so that the first insulating layer in photoelectric sensor of the present invention 102` and source and drain insulating layer in the thin film transistor (TFT) in LCD array substrate can synchronize formed, in other embodiments, given an account of The material of matter layer 106` can also be silica or spin-on material.It should be noted that lead to since the second light hole 202` has The effect of light, and in the present embodiment, dielectric layer fills out the second light hole 202` while intrinsic semiconductor layer 103` is covered It fills, to ensure the thang-kng of the second light hole 202`, the material of dielectric layer 106` need to be translucent material.

With reference to figure 13, formed in the dielectric layer 106` on second area substrate 100` through the dielectric layer Opening 203`, the opening 203` exposes the intrinsic semiconductor layer 103`.

Specifically, in the present embodiment, the opening 203` is formed using the method for photoetching.Relative to the first light hole 201`, the second light hole 202`, the opening 203` is closer to the second conductive structure 302`.

With reference to figure 14, the p-type amorphous sequentially formed is covered in the dielectric layer 106` surfaces and the opening 203` Silicon 107C`, third metal layer 108C`.

Specifically, using plasma enhances chemical vapour deposition technique in the dielectric layer 106` surfaces and the opening P-type non-crystalline silicon 107C` is deposited in 203`, third metal layer 108C` is covered using magnetron sputtering method, but the present invention is to forming P Type non-crystalline silicon 107C`, third metal layer 108A` specific method be not limited.

With reference to figure 15, part P-type non-crystalline silicon 107C`, third metal layer 108A` are removed to exposing dielectric layer by photoetching 106` surfaces, the P-type non-crystalline silicon 107C`, the third metal layer 108C` that are located above the first conductive structure 301` of reservation, form Second doping semiconductor layer 107A`, the second electrode lay 108A` and the P-type non-crystalline silicon 107C` being open in 203`, third Metal layer 108C` forms the second doping semiconductor layer 107B`, the above the second electrode lay 108B`, the first conductive structure 301` Two doping semiconductor layer 107A`, the second electrode lay 108`A form the 4th conductive structure 304`；P-type in the opening 203` is non- Crystal silicon 107B`, third metal layer 108B` form third conductive structure 303`.

It should be noted that the second electrode lay 108B` exposes the second light hole 202`, in the present embodiment, In the second electrode lay 108A` for the second electrode lay 108B` and the 4th conductive structure 304` for forming third conductive structure 303` In the process, in the second electrode lay 108A` of the second electrode lay 108B` and the 4th conductive structure 304` of third conductive structure 303` Between form a lead so that the second electrode lay 108B` and the 4th conductive structure 304` of third conductive structure 303` The second electrode lay 108A` is electrically connected.

In the present embodiment, the material of the second doping semiconductor layer 107A` and the second doping semiconductor layer 107B` are P The material of type non-crystalline silicon, the second electrode lay 108A` and the second electrode lay 108B` be metal, optionally, can be molybdenum, aluminium, The metals such as niobium or wherein several alloys, in other embodiments, the material of the second electrode lay 108` can also be oxidation The translucent conductive materials such as indium tin, zinc oxide.

The third conductive structure 303` is used as photodiode lateral in photoelectric sensor pixel unit of the present invention Anode construction, wherein, the second doping semiconductor layer 107B` of P-type non-crystalline silicon is the anode of lateral photodiode, and second is electric Pole layer 108B` is anode electrode, and fixed negative potential is provided for anode by accessing signal voltage.

The second conductive structure 302` also serves as lateral two pole of photoelectricity in addition to the drain electrode structure as thin film transistor (TFT) The cathode construction of pipe；Intrinsic semiconductor between the second conductive structure 302` and the third conductive structure 303` 103` is used as the light absorbing layer of photodiode.The cathode construction of photodiode, anode construction, light absorbing layer constitute in this way The photodiode of one transverse direction.

The the second doping semiconductor layer 107` and the second electrode lay 108` of 4th conductive structure 304` plays interception, Prevent the light above other pixel units from entering this pixel unit and bringing interference, and the second of the 4th conductive structure 304` Electrode layer 108A` is electrically connected with the second electrode lay 108B` of the third conductive structure 303`, the 4th conductive structure described in this way The current potential of the second electrode lay 108A` of 304` is identical with the current potential of the second electrode lay 108` of the third conductive structure 303`, It is fixed negative potential, the 4th conductive structure 304` and the second conductive structure 302` constitute storage capacitance, be conducive to transverse direction Photodiode cathode stored charge holding.In addition, in the present embodiment, light shield layer 101B` also accesses external voltage, The external voltage of light shield layer 101B` is in the range of 0V to 10V, so as to form another storage electricity with the second conductive structure 302` Hold, further improve the holding effect of the stored charge of lateral photodiode cathode.In other embodiments, light shield layer 101B` can also be connected with grid, i.e. the external voltage of light shield layer 101B` is identical with grid, can also play and the second conductive knot Structure 302` forms the effect of storage capacitance, and light shield layer 101B is also connected with grid and enables under intrinsic semiconductor layer 103` Side is blocked completely, and the light below substrate is utmostly avoided to enter intrinsic semiconductor layer 103`.

It should be noted that in other embodiments, the 4th conductive structure 304` can not also be formed, but forms other The structure of storage capacitance, the invention is not limited in this regard can be formed with the second conductive structure 302.

The optical signal can be converted into electric signal, and it is defeated to pass through thin film transistor (TFT) by the lateral photodiode Go out, so as to which the pixel unit be made to can be used in fingerprint recognition.

With reference to figure 16, in the present embodiment, after the 4th conductive structure 304`, the second conductive structure 302` is formed, The dielectric layer 106`, the second electrode lay 108A` and the second electrode lay 108B` surfaces covering second insulating layer 109`, described the The material of two insulating layer 109` is translucent material, and specifically, the material of the second insulating layer 109` can be silicon nitride, oxidation Silicon or spin-on material.The effect of the second insulating layer 109` is to protect the main knot of photodiode and thin film transistor (TFT) Structure, and photodiode and thin film transistor (TFT) is made to insulate with other structures.

In the present embodiment, contact electricity is also formed on the second electrode lay 108B` surfaces of the third conductive structure 303` Pole (not shown), the material of the contact electrode is tin indium oxide or zinc oxide, and forming contact electrode is advantageous in that, Neng Gouzeng The reliability of strong the second electrode lay 108B`, but whether the present invention is to forming contact electrode and not being limited.

The manufacturing method of photoelectric sensor of the present invention is formed simultaneously multiple above-mentioned pixel units, and the multiple pixel unit is in Array-like is arranged.

The manufacturing method of photoelectric sensor of the present invention further includes：Protective layer is formed above the multiple pixel unit (not It shows).Forming protective layer is advantageous in that, it is possible to reduce the damage of outer bound pair photodiode.

Backlight is set below substrate, and the light that the backlight is sent out passes through the thang-kng arrangement projects in pixel unit Above to pixel unit.Photoelectric sensor i.e. of the present invention has included light source, and light source is located at the lower section of photoelectric sensor, in this way Influence of the external environmental light to photoelectric sensor can preferably be avoided.It is shown since current LCD is substantially all using transmission-type Show, backlight is equipped with below array substrate, and backlight generally uses LED formulas or cold-cathode fluorescent tubular type, therefore light of the present invention Learning sensor can be integrated into the thin film transistor (TFT) array of liquid crystal display panel on same glass, using the backlight conduct of LCD The backlight of photoelectric sensor.

The manufacturing method of photoelectric sensor of the present invention further includes：Formed between connection pixel unit, pixel unit with it is external The a plurality of leads of driving circuit.Can be with continued reference to Fig. 3, and combine with reference to figure 8 to Figure 16：

Specifically, it when forming thin-film transistor gate 101A`, light shield layer 101B`, synchronizes to be formed and a plurality of be arranged along line direction The grid lead 401 of row, one end of every grid lead 401 be electrically connected with external drive circuit, often row pixel unit The grid 101A` of thin film transistor (TFT) 001 is electrically connected with the grid lead 401 gone together, and scanning electricity is provided for grid 101A` Pressure；

When forming thin-film transistor gate 101A`, light shield layer 101B`, also synchronize to be formed and a plurality of arrange along column direction Third lead (not shown), one end of the every third lead be electrically connected with external drive circuit or with the electricity of the second lead 402 It connecting, the light shield layer 101B` of photodiode 002 is electrically connected with a third lead of same column in each column pixel unit, There is provided external voltage for light shield layer 101B` so that light shield layer 101B` and with the second conductive structure 302 form another storage Capacitance.It should be noted that in other embodiments, the third lead can also be not provided with, but make light shield layer 101B` with Grid 101A` is electrically connected, and scanning voltage is provided for light shield layer 101B`, it is also possible that light shield layer 101B` and with the second conductive knot Structure 302 forms another storage capacitance.

When forming first electrode layer 105`, synchronize to form a plurality of the first lead 402 arranged along column direction, described in every One end of first lead 402 is electrically connected with external drive circuit, the source electrode of the thin film transistor (TFT) 001 of each column pixel unit (the first electrode layer 105A` in the first conductive structure 301`) is electrically connected with first lead of same column, is led for described first First electrode layer 105A` in electric structure 301` provides basic voltage；

When forming the second electrode lay 108B`, synchronize to form a plurality of the second lead 403 arranged along column direction, every institute The one end for stating the second lead 403 is electrically connected with external drive circuit, the anode electrode of photodiode 002 in each column pixel unit (the second electrode lay 108B` of third conductive structure 303`) is electrically connected with second lead 402 of same column, is the described second electricity Pole layer 108B` provide signal voltage；

It should be noted that due to all pixels unit signal voltage 0 in the range of -10V and signal voltage Value immobilize, it is possible to by the second lead 403 of each row accumulated on the outside of pixel unit array a lead and with External power supply is connected.

, in the outside of the pixel unit array, turn-on grid electrode lead 401, first can be respectively formed with continued reference to Fig. 4 Lead 402, the grid via 501 of the second lead 403, the first via 502, the second via 503.

Conductive layer 603 is formed in the grid via 501, the first via 502, the second via 503, by grid lead 401st, the first lead 402, the second lead 403 are electrically connected with external drive circuit.

It should be noted that in other embodiments, driving chip can also be used and read chip to lateral photoelectricity Diode is driven and reads, specifically, on the substrate 100 bind driving chip and read chip, make grid lead 401, First lead 402, the second lead 403 are electrically connected with driving chip and reading chip, pass through driving chip and reading chip soft Property circuit board is connected with external power supply.The present invention is not limited the driving of lateral photodiode and playback mode.

As described in above-described embodiment, the step in the manufacturing method of photoelectric sensor of the present invention before formation dielectric layer is permissible It is synchronous with the thin film transistor (TFT) on LCD array substrate to make, i.e., in photoelectric sensor of the present invention in the manufacturing method of pixel unit, While thin film transistor (TFT) is formed, the cathode and light absorbing layer of lateral photoelectric sensor are also formed, it is thin compared with the prior art The manufacturing method of film transistor, which has only had more, forms the second doping semiconductor layer and second electrode as transverse diode anode Layer and etc., compared with the Amorphous silicon flat-panel detectors of the prior art, without being formed again after thin film transistor (TFT) is formed The step of independent photodiode, reduce production cost, and photoelectric sensor of the present invention to form dielectric layer later Step can also be completed using the process equipment of LCD, and the backlight of LCD can also be used as to the backlight of photoelectric sensor of the present invention Plate, therefore, the manufacturing method of photoelectric sensor of the present invention can be combined with traditional LC D manufacturing methods, simplify photoelectric sensing The production technology of device, shortens the production cycle, effectively reduces production cost.

To further improve resolution ratio, in another embodiment, the pixel unit of photoelectric sensor manufacturing method of the present invention In the anode construction of lateral photodiode surround hollow structure with thin film transistor (TFT).

Specifically, with reference to figure 17,18, Figure 17 shows the pixel units one that photoelectric sensor manufacturing method of the present invention makes The vertical view of the embodiment of back-shaped structure is planted, Figure 18 is sectional views of the Figure 17 along BB` lines, it should be noted that in order to incite somebody to action laterally Photodiode anode construction and cathode construction position relationship signal it is clear, the 4th semiconductor junction is omitted in fig. 17 The second electrode lay 108A` of structure 304`.

In the present embodiment, light shield layer 101B`, the first light hole 201`, opening 203`, the first conductive structure 301 are formed The step of `, the second conductive structure 302`, third conductive structure 303`, the second conductive structure 304`, is unlike the embodiments above, His step is roughly the same with above-described embodiment, and details are not described herein.

The first area of substrate 100` surrounds second area, during light shield layer 101B` is formed, makes light shield layer 101B ` is the rectangle of closing, and the first light hole 201` is located at light shield layer 101B` central cores.

During the first conductive structure 301`, the second conductive structure 302` is formed, make first conductive structure 301 `, the second conductive structure 302` surround the frame-type of closing,

During the 203` that is open is formed, center that the opening 203` is made to be located at light shield layer 101B`, while it is located at the One conductive structure 301`, the second conductive structure 302` surround the center of the frame-type of closing, and the opening 203` is rectangle.

Forming the second doping semiconductor layer 107A`, the second doping semiconductor layer 107B`, the second electrode lay 108A`, the During two electrode layer 108B`, make the second doping semiconductor layer 107B`, the second electrode lay 108B` in the opening 203` For the rectangle of closing, then the second doping semiconductor layer 107B` in the opening 203`, the second electrode lay 108B` bottoms It is centrally formed the part of third light hole 204`, the third light hole 204` as thang-kng structure, the third light hole 204 expose the second light hole 202`.The second conductive structure 302` is made to surround the frame of closing centered on the opening 203` Type so that the second conductive structure 302`, third conductive structure 303` are in back-shaped structure.It should be noted that the 4th conductive structure 304` (not showing in Figure 17) equally surrounds the frame of closing above the second conductive structure 302` centered on the opening 203` Type, so that the 4th conductive structure 304` and the second conductive structure 302` is larger in the projection overlapping area of 100 plane of substrate so that 4th conductive structure 304` and the storage capacitance that the second conductive structure 302 is formed are larger, improve in the second conductive structure 302` The quantity of electric charge stored in second doping semiconductor layer 105A`.

In other embodiments, photoelectric sensor manufacturing method of the present invention can also be made in opposite pectinate texture Pixel unit.With reference to figure 19, show that the vertical view of the pixel unit another embodiment of photoelectric sensor manufacturing method of the present invention is saturating View, the sectional view of Figure 19 can be with reference chart 16.In the present embodiment, opening 203`, the first conductive structure 301`, second are formed The step of conductive structure 302`, third conductive structure 303`, the 4th conductive structure 304` and photoelectric sensor manufacturer of the present invention The embodiment that method provides first is different, other steps are roughly the same with the embodiment provided first, and details are not described herein.

During the second conductive structure 302` is formed so that the second conductive structure 302` is in have comb part The pectination of 701` during the 203` that is open is formed, makes opening 203` in the pectination with comb part, the opening 203` In the second doping semiconductor layer 107B`, the second electrode lay 108B` (i.e. third conductive structure 303`) in comb part The pectination of 702`, and the comb part 701` phases of the comb part 702` of third conductive structure 303` and the second conductive structure 302` To setting and being alternately arranged.In the step of forming the 4th conductive structure 304`, the 4th conductive structure 304` is made to be led positioned at second It is similary in the pectination with comb part, the in this way anode construction of i.e. lateral photodiode and the moon above electric structure 302` Pole structural tube is in opposite pectinate texture.The anode construction of lateral photodiode is in opposite pectinate texture with cathode construction It is advantageous in that, the 4th conductive structure 304` can be increased with the second conductive structure 302` in parallel substrate 100` surface directions The overlapping area of projection, and then increase the storage capacitance that the 4th conductive structure 304` and the second conductive structure 302` is formed, into And improve the quantity of electric charge stored in the second doping semiconductor layer 105A` in the second conductive structure 302`.

Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute Subject to the range of restriction.

Claims

1. a kind of photoelectric sensor, is used to implement fingerprint recognition, which is characterized in that including：

Substrate, the substrate include being used to form the first area of thin film transistor (TFT), being used to form the secondth area of photodiode Domain；

Positioned at the grid of first area substrate surface；

Intrinsic semiconductor layer on grid；

The first discrete conductive structure, the second conductive structure of the intrinsic semiconductor layer surface on the substrate of first area, Compared with first conductive structure, for second conductive structure closer to the second area of the substrate, described first is conductive Structure and second conductive structure include the first doping semiconductor layer and the first electrode layer that are located in intrinsic semiconductor layer, First conductive structure is used as the source configuration of the thin film transistor (TFT), and second conductive structure is used as the film crystal The drain electrode structure of pipe；

The dielectric layer being covered in first conductive structure, the second conductive structure and intrinsic semiconductor layer, positioned at the secondth area There is the opening through the dielectric layer, the opening exposes the intrinsic semiconductor layer in the dielectric layer on the substrate of domain；

The second doping semiconductor layer, the second electrode lay being sequentially located in the opening, the second doping in the opening Semiconductor layer, the second electrode lay form third conductive structure；

Second conductive structure also serves as the cathode construction of photodiode, and the third conductive structure in opening is used Make the anode construction of photodiode, the intrinsic semiconductor between the third conductive structure and second conductive structure Light absorbing layer as photodiode；

The optical signal that fingerprint reflects can be converted into electric signal by the photodiode, and be exported by thin film transistor (TFT), institute It states photodiode and forms a pixel unit with the thin film transistor (TFT).

2. photoelectric sensor according to claim 1, which is characterized in that second doping semiconductor layer, second electrode Layer be also formed on the corresponding dielectric layer in first area, for form the 4th conductive structure, the 4th conductive structure with it is described Second conductive structure is used to form storage capacitance.

3. photoelectric sensor according to claim 1, which is characterized in that between the substrate and the intrinsic semiconductor layer It is provided with the first insulating layer.

4. photoelectric sensor according to claim 3, which is characterized in that the substrate, the first insulating layer and dielectric layer Material is translucent material.

5. photoelectric sensor according to claim 3, which is characterized in that the material of first insulating layer for silicon nitride, Silica or spin-on material.

6. photoelectric sensor according to claim 1, which is characterized in that the photoelectric sensor further includes：It is covered in institute The second insulating layer of dielectric layer and second electrode layer surface is stated, the material of the second insulating layer is translucent material.

7. photoelectric sensor according to claim 6, which is characterized in that the dielectric layer, second insulating layer material be Silicon nitride, silica or spin-on material.

8. photoelectric sensor according to claim 1, which is characterized in that positioned at the contact electricity of the second electrode layer surface Pole, the material of the contact electrode is tin indium oxide or zinc oxide.

9. photoelectric sensor according to claim 1, which is characterized in that the open bottom edge and the second conductive structure Spacing close to edge of opening is in the range of 1 to 5 microns.

10. photoelectric sensor according to claim 1, which is characterized in that second conductive structure is in have comb portion Point pectination, the third conductive structure in the opening is in the pectination with comb part, and the third in the opening is conductive Structure is oppositely arranged with first conductive structure, the second conductive structure and comb part is alternately arranged.

11. photoelectric sensor according to claim 1, which is characterized in that the photoelectric sensor includes multiple pictures Plain unit, and multiple pixel units are arranged in array-like；

The photoelectric sensor further includes：It is a plurality of along line direction arrange grid lead, one end of every grid lead with External drive circuit is electrically connected, and often the thin-film transistor gate of row pixel unit is electrically connected with the grid lead gone together, and is Thin-film transistor gate provides scanning voltage；

A plurality of the first lead arranged along column direction, one end of every first lead are electrically connected with external drive circuit, often First electrode layer in first conductive structure of row pixel unit is electrically connected with same column first lead, is led for described first First electrode layer in electric structure provides basic voltage；

A plurality of the second lead arranged along column direction, one end of every second lead are electrically connected with external drive circuit, often The second electrode lay of row pixel unit is electrically connected with same column second lead, and signal electricity is provided for the second electrode lay Pressure.

12. photoelectric sensor according to claim 11, which is characterized in that the photoelectric sensor further includes：Described The turn-on grid electrode lead of array external of pixel unit composition, the first lead, the grid via of the second lead, the first via, the Two vias.

13. photoelectric sensor according to claim 12, which is characterized in that the grid via, the first via, the second mistake In hole there is conductive layer, grid lead, the first lead, the second lead are electrically connected with external drive circuit.

14. photoelectric sensor according to claim 11, which is characterized in that the photoelectric sensor further includes：Positioned at institute State the protective layer above multiple pixel units.

15. photoelectric sensor according to claim 1, which is characterized in that photoelectric sensor further includes：It is set under substrate The backlight of side, the light that the backlight is sent out are set to thang-kng arrangement projects in pixel unit to pixel unit by one Top；

16. photoelectric sensor according to claim 15, which is characterized in that the photoelectric sensor further includes：Positioned at The light shield layer on two area substrate surfaces exposes the of the substrate in the light shield layer intermediate region or have at light shield layer edge One light hole；

The intrinsic semiconductor layer intermediate region or intrinsic semiconductor layer edge, which have, to be located at right over first light hole Second light hole；

17. photoelectric sensor according to claim 16, which is characterized in that the third conductive structure in the opening is envelope The rectangle closed, third conductive structure bottom in said opening are formed with third light hole, and the third light hole exposes the Two light holes, second conductive structure surround the frame-type of closing centered on the opening so that the second conductive structure and institute The third conductive structure in opening is stated in back-shaped structure, the thang-kng structure further includes the third light hole.

18. photoelectric sensor according to claim 17, which is characterized in that first light hole, the second light hole, The aperture of three light holes is in the range of 0 to 10 microns.

19. photoelectric sensor according to claim 16, which is characterized in that the light shield layer by the opening with second Intrinsic semiconductor layer between conductive structure is blocked completely.

20. photoelectric sensor according to claim 19, which is characterized in that the light shield layer and second conductive structure For forming storage capacitance.

21. photoelectric sensor according to claim 20, which is characterized in that the photoelectric sensor includes multiple pictures Plain unit, and multiple pixel units are arranged in array-like；The photoelectric sensor further includes：

The a plurality of third lead arranged along column direction, one end of the every third lead are electrically connected with an external drive circuit, The light shield layer of each column pixel unit is electrically connected with same column third lead, and external voltage is provided for light shield layer.

22. photoelectric sensor according to claim 21, which is characterized in that the range that the external voltage arrives -10V 0 It is interior.

23. photoelectric sensor according to claim 13, which is characterized in that the range that the scanning voltage arrives 15V -10 Interior, the basic voltage is in the range of 0 to 3V, and the signal voltage is in the range of 0 to -10V.

24. a kind of manufacturing method of photoelectric sensor, which is characterized in that including：

Substrate is provided, forms multiple pixel units over the substrate, wherein each pixel unit includes thin film transistor (TFT) and light Electric diode；

The step of forming pixel unit includes：

Substrate is provided, the substrate includes the first area for being used to form thin film transistor (TFT), be used to form photodiode the Two regions；

Grid is formed in the first area substrate surface；

Intrinsic semiconductor layer is formed on the grid；

The intrinsic semiconductor layer surface on the substrate of first area forms the first discrete conductive structure, the second conductive knot Structure, compared with first conductive structure, closer to the second area of the substrate, described first leads second conductive structure Electric structure and second conductive structure include the first doping semiconductor layer and the first electrode that are located in intrinsic semiconductor layer Layer, first conductive structure are used as the source configuration of the thin film transistor (TFT), and second conductive structure is used as the film The drain electrode structure of transistor；

The opening through the dielectric layer is formed in the dielectric layer on second area substrate, the opening exposes institute State intrinsic semiconductor layer；

Sequentially form the second doping semiconductor layer, the second electrode lay in said opening, the second doping in the opening is partly led Body layer, the second electrode lay form third conductive structure；

Second conductive structure also serves as photodiode cathode structure；The third conductive structure in opening is used as The anode construction of photodiode, the intrinsic semiconductor between the third conductive structure and second conductive structure are used Make the light absorbing layer of photodiode；

The optical signal that fingerprint reflects can be converted into electric signal by the photodiode, and be exported by thin film transistor (TFT), from And the pixel unit is made to can be used in fingerprint recognition.

25. manufacturing method according to claim 24, which is characterized in that forming second doping semiconductor layer, the In the step of two electrode layers, second doping semiconductor layer, the second electrode lay are also formed into the corresponding dielectric layer in first area On, for forming the 4th conductive structure, the 4th conductive structure is used to form storage capacitance with second conductive structure.

26. manufacturing method according to claim 24, which is characterized in that after grid is formed, form intrinsic semiconductor Before layer, also form the first insulating layer on the grid, the intrinsic semiconductor layer formed on first insulating layer.

27. manufacturing method according to claim 26, which is characterized in that the substrate, the first insulating layer and dielectric layer Material is translucent material.

28. according to the manufacturing method described in claim 27, which is characterized in that the material of first insulating layer is silicon nitride, oxygen SiClx or spin-on material.

29. manufacturing method according to claim 24, which is characterized in that further include：In the dielectric layer and the second electricity Pole layer surface covering second insulating layer, the material of the second insulating layer is translucent material.

30. manufacturing method according to claim 29, which is characterized in that the dielectric layer, second insulating layer material be Silicon nitride, silica or spin-on material.

31. manufacturing method according to claim 24, which is characterized in that further include：Second electrode in said opening Layer surface forms contact electrode, and the material of the contact electrode is tin indium oxide or zinc oxide.

32. manufacturing method according to claim 24, which is characterized in that make the open bottom edge and the second conductive knot The spacing of the close edge of opening of structure is in the range of 1 to 5 microns.

33. manufacturing method according to claim 24, which is characterized in that make first conductive structure, the second conductive knot Structure is in the pectination with comb part, and the third conductive structure in the opening is in the pectination with comb part, and described is opened The comb part of third conductive structure in mouthful and first conductive structure, the second conductive structure is oppositely arranged and comb part It is alternately arranged.

34. manufacturing method according to claim 24, which is characterized in that further include：Backlight is set below substrate, institute It states above thang-kng arrangement projects to the pixel unit that the light that backlight is sent out is formed in by one in pixel unit.

35. manufacturing method according to claim 34, which is characterized in that

During grid is formed, light shield layer synchronously is formed in second area substrate surface, in the light shield layer middle area Domain forms the first light hole for exposing the substrate at light shield layer edge；

It is formed and is located at right over first light hole in the intrinsic semiconductor layer intermediate region or intrinsic semiconductor layer edge The second light hole；

36. manufacturing method according to claim 35, which is characterized in that it is envelope to make the third conductive structure in the opening Third light hole is formed on the rectangle closed, third conductive structure bottom in said opening, and the third light hole exposes second Light hole makes second conductive structure surround the frame-type of closing centered on the opening so that the second conductive structure and institute The third conductive structure in opening is stated in back-shaped structure, the thang-kng structure further includes the third light hole.

37. manufacturing method according to claim 36, which is characterized in that make first light hole, the second light hole, The aperture of three light holes is in the range of 0 to 10 microns.

38. manufacturing method according to claim 35, which is characterized in that make the light shield layer by the opening with second Intrinsic semiconductor layer between conductive structure is blocked completely.

39. manufacturing method according to claim 35, which is characterized in that form grid and light shield layer in the substrate surface Process include：The first metal layer is formed in the substrate surface using magnetron sputtering method, the first gold medal of part is removed by photoetching Belong to layer to substrate surface is exposed, form the first light hole in thin-film transistor gate, light shield layer and light shield layer.

40. manufacturing method according to claim 26, which is characterized in that form intrinsic half in first surface of insulating layer The process of conductor layer includes：Using plasma enhances chemical vapour deposition technique, in the first surface of insulating layer deposition intrinsic Non-crystalline silicon removes part intrinsic amorphous silicon by photoetching and forms this to the first surface of insulating layer, the intrinsic amorphous silicon of reservation is exposed Levy semiconductor layer.

41. manufacturing method according to claim 24, which is characterized in that form first in the intrinsic semiconductor layer surface Conductive structure, the second conductive structure process include：Using plasma enhances chemical vapour deposition technique intrinsic partly leads described Body layer surface deposited n-type non-crystalline silicon covers second metal layer, to the second metal layer, N-type in the N-type amorphous silicon surfaces Non-crystalline silicon carries out photoetching, removes most second metal layer, N-type non-crystalline silicon to intrinsic semiconductor layer is exposed, remaining N-type is non- Crystal silicon forms the first doping semiconductor layer, and remaining second metal layer forms first electrode layer.

42. manufacturing method according to claim 24, which is characterized in that the material of the second electrode lay is for metal or thoroughly Light conductive material.

43. manufacturing method according to claim 24, which is characterized in that square dielectric layer surface on the first electrode And the second doping semiconductor layer sequentially formed is formed in the opening, the process of the second electrode lay includes：In the medium The P-type non-crystalline silicon sequentially formed, third metal layer are covered in layer surface and the opening, it is non-to remove part p-type by photoetching Crystal silicon, third metal layer to exposing dielectric layer surface, reservation be located in above first electrode, described opening and opening week The P-type non-crystalline silicon on side, third metal layer form the second doping semiconductor layer, the second electrode lay.

44. manufacturing method according to claim 24, which is characterized in that further include：

The multiple pixel unit is made to arrange in array-like；

When forming grid, synchronize to form a plurality of grid lead arranged along line direction, one end of every grid lead with External drive circuit is electrically connected, and often the grid of row pixel unit is electrically connected with the grid lead gone together；

When forming first electrode layer, synchronize to form a plurality of the first lead arranged along column direction, every first lead One end is electrically connected with external drive circuit, one of the first electrode layer and same column in the first conductive structure of each column pixel unit First lead is electrically connected；

When forming the second electrode lay, synchronize to form a plurality of the second lead arranged along column direction, every second lead One end is electrically connected with external drive circuit, and the second electrode lay of each column pixel unit is electrically connected with same column second lead.

45. manufacturing method according to claim 44, which is characterized in that further include：

In the array external of pixel unit composition, it is respectively formed the grid of turn-on grid electrode lead, the first lead, the second lead Via, the first via, the second via.

46. manufacturing method according to claim 44, which is characterized in that in the grid via, the first via, the second mistake Hole forms conductive layer, and grid lead, the first lead, the second lead are electrically connected with external drive circuit.

47. manufacturing method according to claim 44, which is characterized in that further include：Above the multiple pixel unit Form protective layer.