CN105336565A - Immersed type method for cleaning watermark after explosion - Google Patents
Immersed type method for cleaning watermark after explosion Download PDFInfo
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- CN105336565A CN105336565A CN201410259089.3A CN201410259089A CN105336565A CN 105336565 A CN105336565 A CN 105336565A CN 201410259089 A CN201410259089 A CN 201410259089A CN 105336565 A CN105336565 A CN 105336565A
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Abstract
The invention provides an immersed type method for cleaning a watermark after explosion. The method comprises the following steps: moving a wafer to a PIR cavity, wherein the cavity is provided with a nozzle apparatus, and the nozzle apparatus comprises a deionized water nozzle and a nitrogen nozzle which are connected with each other; moving the nozzle apparatus above the wafer and aligning the deionized water nozzle with the center of the wafer; the deionized water nozzle spraying deionized water, the wafer rotates at the same time, wherein the deionized water nozzle moves to the edge of the wafer from the center of the wafer at a predetermined moving speed while spraying the water; when the deionized water nozzle moves from the center of the wafer and the nitrogen nozzle moves to the center of the wafer, the nitrogen nozzle spraying nitrogen to enable the intermediate portion of the surface of the wafer to be dry; the deionized water nozzle continuously moving towards the edge of the wafer, the nitrogen nozzle stops spraying at a predetermined position, and the nozzle apparatus moving from above the wafer; and after the nozzle apparatus completely moves back to an original position, the wafer rotating at a higher rotating speed to enable the surface of the wafer to be dry. According to the invention, watermark defects at the surface of a photoresist can be reduced, and the product yield is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, specifically, the present invention relates to the method for cleaning watermark after exposure in a kind of immersion lithography process with filtered air.
Background technology
Along with semiconductor fabrication develops constantly, enter into the less characteristic size stage, such as 65nm, 45nm and following technology node, progressively start in the industry to have employed immersion lithography process with filtered air.
After immersion exposure technique, water droplet can be present in photoresist (PR) surface.Then, in water droplet drying process, photoresist or Topcoating wherein remain and will cover photoresist surface, and form the defect of circle shape, are called watermark defect (watermark).
Usually, after applying immersion exposure, cleaning (PIR, PostImmersionRinse) technique can reduce above-mentioned watermark defect.
Fig. 1-1 to Fig. 1-6 is the schematic flow sheet of cleaning after a kind of immersion exposure of the prior art.First as Figure 1-1, a wafer 202 is moved into cleaning chamber (not shown) after an immersion exposure, there is in this chamber a deionized water nozzle 201.Then as shown in Figure 1-2, deionized water nozzle 201 moves to the top of wafer 202 and aims at the center of wafer 202.Again then as Figure 1-3, deionized water nozzle 201 sprays deionized water (DIwater), and wafer 202 rotates during this period, is removed by the water droplet on wafer 202 surface by deionized water.Then as Figure 1-4, deionized water nozzle 201 stops water spray.Subsequently as Figure 1-5, deionized water nozzle 201 retracts original position after water spray.As shown in figures 1 to 6, wafer 202, with a higher rotating speed rotation, makes the surperficial bone dry of wafer 202 finally.
But after above-mentioned traditional immersion exposure still can there are some problems in cleaning:
(1) centripetal force near crystal circle center position is not by force even as big as clean water residual (waterresidual);
(2) photoresist surface trends towards becoming more and more hydrophobicity, can not very effectively remove from a hydrophobic surface so water is residual.
Summary of the invention
Technical problem to be solved by this invention cleans the method for watermark after being to provide a kind of immersion exposure, reduce the watermark defect on photoresist surface after immersion exposure technique.
For solving the problems of the technologies described above, cleaning the method for watermark after the invention provides a kind of immersion exposure, comprising step:
A. a wafer is moved into cleaning chamber after an immersion exposure, described chamber has a spray nozzle device, and described spray nozzle device comprises the deionized water nozzle and a dry gas nozzle that are connected to each other;
B. described spray nozzle device is moved to the top of described wafer and described deionized water nozzle is aimed at the center of described wafer;
C. described deionized water nozzle ejection deionized water, described wafer rotates during this period, and described deionized water nozzle is sprayed water and shifted to edge with a predetermined translational speed from the center of described wafer;
D., when when described deionized water nozzle is removed from the center of described wafer, described dry gas nozzle moves to the center of described wafer, described dry gas nozzle ejection dry gas, makes the mid portion of described crystal column surface dry;
E. described deionized water nozzle moves to the edge of described wafer constantly, and described dry gas nozzle stops jet at a preposition, and described spray nozzle device removes the top of described wafer;
F., after described spray nozzle device retracts original position completely, described wafer, with a higher rotating speed rotation, makes described crystal column surface dry.
Alternatively, the rotating speed of described wafer is 200 ~ 2000rpm.
Alternatively, the translational speed of described spray nozzle device is 1 ~ 10cm/s.
Alternatively, described dry gas is nitrogen.
Alternatively, the jet radius of described nitrogen is 10 ~ 60cm.
Alternatively, the flow of described nitrogen is 10 ~ 50ml/s.
Compared with prior art, the present invention has the following advantages:
The present invention connects a dry gas nozzle by increasing on deionized water nozzle, composition spray nozzle device, when making that dry gas nozzle moves to the center of wafer when deionized water nozzle is removed from the center of wafer, the dry gas of dry gas nozzle ejection helps the mid portion of wafer to remove watermark to realize drying, avoids the water residue problem that the centripetal force of the center of close wafer is powerful do not caused.
In addition, deionized water nozzle of the present invention moves from the center of wafer to edge constantly in the process of water spray, and the water that more effectively removes crystal column surface remains.
In sum, the present invention can reduce the watermark defect on photoresist surface, increases product yield.
Accompanying drawing explanation
The above and other features of the present invention, character and advantage become more obvious by passing through below in conjunction with the description of drawings and Examples, wherein:
Fig. 1-1 to Fig. 1-6 is the schematic flow sheet of cleaning after a kind of immersion exposure of the prior art;
Fig. 2-1 to Fig. 2-6 is the process flow diagram cleaning watermark after the immersion exposure of one embodiment of the invention.
Embodiment
Below in conjunction with specific embodiments and the drawings, the invention will be further described; set forth more details in the following description so that fully understand the present invention; but the present invention obviously can implement with multiple this alternate manner described that is different from; those skilled in the art can when doing similar popularization, deduction without prejudice to when intension of the present invention according to practical situations, therefore should with content constraints protection scope of the present invention of this specific embodiment.
Fig. 2-1 to Fig. 2-6 is the process flow diagram cleaning watermark after the immersion exposure of one embodiment of the invention.It should be noted that these accompanying drawings all only exemplarily, it is not draw according to the condition of equal proportion, and should not be construed as limiting in this, as to the protection range of actual requirement of the present invention.
The technological process of watermark is cleaned after this embodiment immersion exposure of detailed hereafter:
First, as shown in Fig. 2-1, clean (PIR) processing chamber (not shown) after a wafer 302 being moved into an immersion exposure, this chamber has a spray nozzle device 301.This spray nozzle device 301 comprises deionized water nozzle 303 and the dry gas nozzle 304 be connected to each other.
Then, as shown in Fig. 2-2, spray nozzle device 301 is moved to the top of wafer 302 and the center of deionized water nozzle 303 with wafer 302 is aimed at.
Again then as Figure 2-3, deionized water nozzle 303 sprays deionized water, and wafer 302 rotates with a rotating speed during this period.Deionized water nozzle 303 is sprayed water while shift to edge with a predetermined translational speed from the center of wafer 302, and this predetermined translational speed can be 1 ~ 10cm/s.
Then as in Figure 2-4, when when deionized water nozzle 303 is removed from the center of wafer 302, dry gas nozzle 304 moves to the center of wafer 302, dry gas nozzle 304 sprays dry gas, makes the mid portion on wafer 302 surface dry.In the present embodiment, this dry gas can be nitrogen (N
2) or other inactive gass, its flow can be 10 ~ 50ml/s.
Subsequently as shown in Figure 2-5, deionized water nozzle 303 moves to the edge of wafer 302 constantly, and the jet radius of dry gas (such as nitrogen) on wafer 302 of this dry gas nozzle 304 ejection is 10 ~ 60cm.Dry gas nozzle 304 stops jet at a preposition, and spray nozzle device 301 removes the top of wafer 302.
As shown in figures 2-6, after spray nozzle device 301 retracts original position completely, wafer 302, with a higher rotating speed rotation, makes wafer 302 dry tack free finally.In the present embodiment, the range of speeds of this wafer 302 all can control at 200 ~ 2000rpm.
The present invention connects a dry gas nozzle by increasing on deionized water nozzle, composition spray nozzle device, when making that dry gas nozzle moves to the center of wafer when deionized water nozzle is removed from the center of wafer, the dry gas of dry gas nozzle ejection helps the mid portion of wafer to remove watermark to realize drying, avoids the water residue problem that the centripetal force of the center of close wafer is powerful do not caused.
In addition, deionized water nozzle of the present invention moves from the center of wafer to edge constantly in the process of water spray, and the water that more effectively removes crystal column surface remains.
In sum, the present invention can reduce the watermark defect on photoresist surface, increases product yield.
Although the present invention with preferred embodiment openly as above, it is not that any those skilled in the art without departing from the spirit and scope of the present invention, can make possible variation and amendment for limiting the present invention.Therefore, every content not departing from technical solution of the present invention, any amendment done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all fall within protection range that the claims in the present invention define.
Claims (6)
1. clean a method for watermark after immersion exposure, comprise step:
A. a wafer (302) is moved into cleaning chamber after an immersion exposure, described chamber has a spray nozzle device (301), and described spray nozzle device (301) comprises the deionized water nozzle (303) and a dry gas nozzle (304) that are connected to each other;
B. described spray nozzle device (301) is moved to the top of described wafer (302) and described deionized water nozzle (303) is aimed at the center of described wafer (302);
C. described deionized water nozzle (303) ejection deionized water, described wafer (302) rotates during this period, and described deionized water nozzle (303) is sprayed water and shifted to edge with a predetermined translational speed from the center of described wafer (302);
D. when when described deionized water nozzle (303) is removed from the center of described wafer (302), described dry gas nozzle (304) moves to the center of described wafer (302), described dry gas nozzle (304) ejection dry gas, makes the mid portion on described wafer (302) surface dry;
E. described deionized water nozzle (303) is moved to the edge of described wafer (302) constantly, described dry gas nozzle (304) stops jet at a preposition, and described spray nozzle device (301) removes the top of described wafer (302);
F., after described spray nozzle device (301) retracts original position completely, described wafer (302), with a higher rotating speed rotation, makes described wafer (302) dry tack free.
2. the method for cleaning watermark according to claim 1, is characterized in that, the rotating speed of described wafer (302) is 200 ~ 2000rpm.
3. the method for cleaning watermark according to claim 2, is characterized in that, the translational speed of described spray nozzle device (301) is 1 ~ 10cm/s.
4. the method for cleaning watermark according to claim 3, is characterized in that, described dry gas is nitrogen.
5. the method for cleaning watermark according to claim 4, is characterized in that, the jet radius of described nitrogen is 10 ~ 60cm.
6. the method for cleaning watermark according to claim 5, is characterized in that, the flow of described nitrogen is 10 ~ 50ml/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410259089.3A CN105336565A (en) | 2014-06-12 | 2014-06-12 | Immersed type method for cleaning watermark after explosion |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410259089.3A CN105336565A (en) | 2014-06-12 | 2014-06-12 | Immersed type method for cleaning watermark after explosion |
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| CN105336565A true CN105336565A (en) | 2016-02-17 |
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| CN201410259089.3A Pending CN105336565A (en) | 2014-06-12 | 2014-06-12 | Immersed type method for cleaning watermark after explosion |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105717754A (en) * | 2016-04-07 | 2016-06-29 | 上海华力微电子有限公司 | Developing apparatus and method for reducing water stain defects by using same |
| CN108919618A (en) * | 2018-07-04 | 2018-11-30 | 南通沃特光电科技有限公司 | A kind of photoresist edge-washing device |
| CN111508821A (en) * | 2020-04-01 | 2020-08-07 | 上海华虹宏力半导体制造有限公司 | Wafer cleaning method |
| TWI797159B (en) * | 2017-09-25 | 2023-04-01 | 日商東京威力科創股份有限公司 | Substrate processing method, substrate processing device, and storage medium |
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| CN1838385A (en) * | 2005-03-21 | 2006-09-27 | 细美事有限公司 | Method and apparatus for cleaning and drying wafer |
| CN101587859A (en) * | 2008-05-23 | 2009-11-25 | 中芯国际集成电路制造(北京)有限公司 | Method for forming semiconductor interconnected structure |
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| CN103377913A (en) * | 2012-04-18 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Method of forming opening |
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Patent Citations (6)
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| CN1838385A (en) * | 2005-03-21 | 2006-09-27 | 细美事有限公司 | Method and apparatus for cleaning and drying wafer |
| CN101587859A (en) * | 2008-05-23 | 2009-11-25 | 中芯国际集成电路制造(北京)有限公司 | Method for forming semiconductor interconnected structure |
| CN101651085A (en) * | 2008-08-14 | 2010-02-17 | 中芯国际集成电路制造(北京)有限公司 | Device and method for cleaning chip |
| CN102768942A (en) * | 2011-05-05 | 2012-11-07 | 隆达电子股份有限公司 | Substrate cleaning and manufacturing process |
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| CN103377884A (en) * | 2012-04-23 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Hard mask layer structure and low k dielectric layer etching method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105717754A (en) * | 2016-04-07 | 2016-06-29 | 上海华力微电子有限公司 | Developing apparatus and method for reducing water stain defects by using same |
| TWI797159B (en) * | 2017-09-25 | 2023-04-01 | 日商東京威力科創股份有限公司 | Substrate processing method, substrate processing device, and storage medium |
| CN108919618A (en) * | 2018-07-04 | 2018-11-30 | 南通沃特光电科技有限公司 | A kind of photoresist edge-washing device |
| CN111508821A (en) * | 2020-04-01 | 2020-08-07 | 上海华虹宏力半导体制造有限公司 | Wafer cleaning method |
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