CN105244390A - Multi-quantum well photovoltaic battery based on nanometer graphite electron transmission layer, and preparation method thereof - Google Patents
Multi-quantum well photovoltaic battery based on nanometer graphite electron transmission layer, and preparation method thereof Download PDFInfo
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- 239000010439 graphite Substances 0.000 title claims abstract description 83
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 83
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 230000005540 biological transmission Effects 0.000 title abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Chemical class 0.000 claims abstract description 24
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- 238000000034 method Methods 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 16
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- 239000000084 colloidal system Substances 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 37
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
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- 239000002245 particle Substances 0.000 claims description 8
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
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- 239000004698 Polyethylene Substances 0.000 claims description 3
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- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 claims description 3
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 2
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 2
- VBICKXHEKHSIBG-UHFFFAOYSA-N beta-monoglyceryl stearate Natural products CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 claims description 2
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- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- JVLRYPRBKSMEBF-UHFFFAOYSA-K diacetyloxystibanyl acetate Chemical compound [Sb+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JVLRYPRBKSMEBF-UHFFFAOYSA-K 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229940046892 lead acetate Drugs 0.000 claims description 2
- 229910000464 lead oxide Inorganic materials 0.000 claims description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- -1 polyethylene Polymers 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000004246 zinc acetate Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000002096 quantum dot Substances 0.000 abstract description 12
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- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
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- 238000005215 recombination Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- DBJUEJCZPKMDPA-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O DBJUEJCZPKMDPA-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000004062 sedimentation Methods 0.000 description 1
- PJYXVICYYHGLSW-UHFFFAOYSA-J tetrachloroplumbane Chemical compound Cl[Pb](Cl)(Cl)Cl PJYXVICYYHGLSW-UHFFFAOYSA-J 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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Abstract
The invention relates to a multi-quantum well photovoltaic battery based on a nanometer graphite electron transmission layer, and a preparation method thereof. The battery comprises a front electrode, an anti-reflection layer, N-type silicon, P-type silicon and a back electrode, wherein a composite layer composed of graphite and semiconductor quantum dots is arranged between the anti-reflection layer and the N-type silicon. Compared to the prior art, the method is characterized in such a way that a sol method is employed, first of all, a semiconductor quantum dot colloid is prepared; under the effect of a surfactant, the graphite is uniformly dispersed to the colloid, and then, by taking the graphite as a crystal growth liquid, a uniform an ordered electron transmission layer and a semiconductor quantum dot layer are grown on the surface of a crystal silicon chip in a deposition mode. According to the invention, by use of a quantum dot impact ionization effect and a namometer effect and excellent electron separate transmission performance of nanometer graphite, the minority carrier life and the quantum efficiency of the photovoltaic battery are improved, and the nanometer graphite can improve separation and collection of electrons by the silicon solar battery, improves photoelectric currents and accordingly improve the conversion efficiency of the silicon solar battery.
Description
Technical field
The present invention relates to the preparation of photovoltaic cell, especially relate to a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer and preparation method.
Background technology
Solar cell is the study hotspot of 21 century.From 1954, first piece of solar cell was since Bell Laboratory is born, and through the research and development of over half a century, solar battery technology has had significant progress and progress.It has entered the development of the third generation.First generation solar cell is wafer technology, and based on element silicon, its technology is quite ripe.Account for more than 90% of whole all kinds of manufacture of solar cells amount at present, wherein again based on price, polysilicon solar cell that efficiency (being about 15%) is lower.The solar cell of the second generation is thin film technique, and production process is more than Silicon Wafer technique variation and cost of manufacture is lower.But reach can for electricity usage only have CuInSe (CIS) solar cell, efficiency is about 13%, and other less expensive and that efficiency is medium hull cells have microcrystal silicon (about 8%), amorphous silicon (about 10%), II-VI race (about 10%).Third generation solar cell comprises the novel solar battery technology in all innovations, rudiment.Comprise the photovoltaic cells such as lamination, quantum dot, multipotency band, thermal photovoltaic, multiple carrier.Except lamination power conversion efficiency (pce) is higher, the efficiency of other photovoltaic cells is still very low.
Tang achieved the battery efficiency of 1% in 1979 with the heterojunction that two kinds of different organic dyestuff are made, and reported the breakthrough in this organic solar batteries field in 1986.By the continuous research of people, understood heterostructure to the separation of electron-hole pair and transmitting effect, but organic solar batteries still cannot obtain desirable efficiency.The key factor affecting its final efficiency is exactly the recombination losses again of charge carrier.How photo-generated carrier is separated and is transferred to electrode and collect, become key technology in the urgent need to address in photovoltaic art.Traditional organic carrier transport layer is stable not.To environment, unfriendly and price costly.
Nano-graphite is outside the advantage such as have conduction, thermal conductivity is good, and thermal stability is high, and carrier transport speed is fast, and it is large that it also has specific area, active advantages of higher.Light can not only be increased catch, improve light utilization efficiency; Can also Carrier Recombination be extended, promote minority carrier life time.The excellent conductive capability of graphite itself improves collection and the transmission of few son (electronics).A kind of low price, environmental friendliness, and stable higher electron transfer layer.
Summary of the invention
Object of the present invention be exactly in order to overcome above-mentioned prior art exist defect and a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer and preparation method thereof is provided, the present invention significantly can not only improve the photoelectric properties such as minority carrier life time, quantum efficiency of photovoltaic cell, can also increase photoelectric current greatly.And then improve final photoelectric conversion efficiency.
Object of the present invention can be achieved through the following technical solutions:
A kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer, front electrode, anti-reflection layer, N-type silicon, P-type silicon and back electrode that this battery stratiform is laid, be provided with the composite bed that one deck is made up of graphite and semiconductor-quantum-point between anti-reflection layer and N-type silicon.
Described graphite is one or more in native graphite, electrode graphite, fine graphite or nano-graphite.
Described semiconductor-quantum-point is the one in zinc oxide, lead oxide, tin oxide, chromium oxide or antimony oxide.
Described photovoltaic cell is the one in crystal silicon battery, dye-sensitized cell, organic thin film cells or perovskite battery.
The composite bed be made up of graphite and semiconductor-quantum-point is deposited on N-type silicon, and the size controlling of the composite bed be made up of graphite and semiconductor-quantum-point is at 1 ~ 500nm.
Based on the preparation method of the Multiple Quantum Well photovoltaic cell of nano-graphite electron transfer layer, comprise the following steps:
1) semiconductor-quantum-point colloidal sol is prepared: be made into semiconductor-quantum-point colloidal sol with semiconductor alloy source, solvent and surfactant, wherein the concentration of semiconductor alloy ion is 0.01-0.5mol/L, and the concentration of surfactant is 3.3-13.4g/L;
In this step, described semiconductor alloy source is selected from the one in zinc acetate, lead acetate, butter of tin, chromium chloride or antimony acetate.Described solvent is selected from the one in water, methyl alcohol, ethanol, acetone or toluene.Described surfactant is selected from the one in carboxymethyl cellulose (CMC), polyvinyl alcohol (PEG), polyethylene (PE), polyvinylpyrrolidone (PVP), stearic acid monoglyceride (GMS) or glyceryl tristearate (HTG).
2) in semiconductor-quantum-point colloidal sol, add nanoscale graphite carbon source, the concentration making graphite is 10-60mg/L, fully stirs, powerful ultrasonic with the particle diameter shearing colloidal sol, obtains the composite colloid of graphite and semiconductor-quantum-point;
In this step, graphite carbon source is selected from one or more in native graphite, electrode graphite, fine graphite or nano-graphite, and the particle diameter of graphite is 1 ~ 100nm;
3) preliminary treatment of crystal silicon chip: N-type silicon chip be impregnated in cleaning fluid and clean, removes greasy dirt and the silicon dioxide layer on N-type silicon chip surface; Ultrasonic cleaning in deionized water after taking-up, draining, dries up.
In this step, described cleaning fluid is hydrofluoric acid solution, and concentration is preferably 1mol/L.
4) deposition growing of semiconductor layer and electron transfer layer: the N-type silicon chip after cleaning is impregnated into step 2) deposition growing semiconductor quantum layer and electron transfer layer in gained composite colloid, the composite bed be namely made up of graphite and semiconductor-quantum-point;
5) short annealing process: to step 4) composite bed that is made up of graphite and semiconductor-quantum-point of gained carries out short annealing process; Electron transfer layer is after short annealing process, and electron transfer layer and semiconductor quantum layer, N-type silicon and front electrode can form good ohmic contact.
6) the completing of resultant battery sheet: through the N-type silicon chip of above-mentioned process again by cell piece manufacture craft, through etching, evaporation antireflective film and make electrode, obtains the final Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer.
The composite bed be made up of graphite and semiconductor-quantum-point in the present invention can not only be used in conventional crystal silicon solar cell, and at perovskite solar cell, quantum dot sensitized solar cell etc. also have better application prospect.
The present invention adopts sol method, first prepares semiconductor-quantum-point colloid; Under the effect of surfactant, graphite is distributed in colloid uniformly.Then it can be used as seeded growth liquid, grow the uniform sequential electron transfer layer of one deck and semiconductor-quantum-point layer at crystal silicon chip surface deposition.Utilize quantum dot impact ionization and nano effect, and the electronics separated transmission performance that nano-graphite is excellent, improve minority carrier life time and the quantum efficiency of photovoltaic cell, nanoscale graphite can improve silicon solar cell to the separation of electronics and collection, improve photoelectric current, and then improve the conversion efficiency of silicon solar cell.
In the present invention, the gross thickness of the composite bed be made up of graphite and semiconductor-quantum-point of preparation is 10 ~ 200nm.Composite particles particle diameter is 1 ~ 500nm, and uniform sequential growth, at crystal silicon chip table, has good photo and thermal stability.
Compared with prior art, the present invention has the following advantages and beneficial effect:
1. the semiconductor-quantum-point layer prepared by the present invention and nanometer graphite layer are evenly distributed on crystal silicon chip, and photo and thermal stability is good.
2. nano-graphite and quantum dot are after short annealing process, can form good ohmic contact with silion cell and electrode, for the collection of electronics and transmission provide necessary condition.
3. the advantages such as nanoscale graphite has conduction, thermal conductivity is good, and thermal stability is high, and carrier transport speed is fast.There is the separation of good electronics, transmission performance, the transmission of electronics in crystal silicon chip can be improved, and the separation of electron-hole pair.Nano-graphite role connects heterojunction and electrode exactly.Photo-generated carrier is collected as soon as possible and is transferred to front electrode.Significantly can not only improve the photoelectric properties such as minority carrier life time, quantum efficiency of photovoltaic cell, photoelectric current can also be increased greatly.And then improve final photoelectric conversion efficiency.
4. raw materials used is mostly environmentally friendly, and preparation technology is simple to operation.There is good prospects for commercial application.
Accompanying drawing explanation
Fig. 1 is the structural representation of the Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer.
Fig. 2 is the HRTEM figure of embodiment 1 zinc oxide semi-conductor quantum dot.
Fig. 3 is untreated of embodiment 1 and the quantum efficiency comparison diagram of processing blades.
Fig. 4 is untreated of embodiment 1 and photoelectric conversion efficiency (PCE) comparison diagram of processing blades.
Fig. 5 is untreated of embodiment 3 and photoelectric conversion efficiency (PCE) comparison diagram of processing blades.
Fig. 6 is untreated of embodiment 7 and photoelectric conversion efficiency (PCE) comparison diagram of processing blades.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment 1
A kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer that the present embodiment provides, concrete steps are as follows:
1) the hydrofluoric acid clean liquid of solution preparation: 1mol/L; Zinc ion concentration is the zinc oxide semi-conductor quantum dot colloidal sol of 0.025mol/L, and absolute ethyl alcohol selected by solvent, stirs and makes it to dissolve completely; Then slowly add surfactant polyvinylpyrrolidone (PVP), concentration is 6.7g/L; Then the nanoscale graphite carbon source of 33mg/L is added.Abundant stirring, powerful ultrasonic with the particle diameter shearing colloidal sol.Obtain the composite colloid of graphite and semiconductor-quantum-point.
2) crystal silicon chip with process: crystal silicon chip is impregnated into 15s in cleaning fluid, removes the greasy dirt on cell piece surface and silicon dioxide layer; Ultrasonic cleaning 1min in deionized water after taking-up, draining, dries up.
3) deposition growing of semiconductor layer and electron transfer layer: the crystal silicon chip after cleaning is impregnated into deposition growing semiconductor layer and electron transfer layer in above-mentioned composite colloid, and the reaction time is 10s, lifts, dry up rapidly with the speed of 2cm/min;
4) short annealing process: annealing in process 5min at 850 DEG C.
5) the completing of resultant battery sheet: through the crystal silicon chip of above-mentioned process again by cell piece manufacture craft, through etching, evaporation antireflective film and make electrode, obtains the final Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer.
The structure of the Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer that the present embodiment obtains as shown in Figure 1, the front electrode 1 that this battery stratiform is laid is (as negative pole, for Ag material), anti-reflection layer 2 (for SiNx material), graphite and the semiconductor-quantum-point composite bed 3, N-type silicon 4, P-type silicon 5 and the back electrode 6 that form be (as positive pole, for Al material), wherein composite bed 3 is made up of nano-graphite electron transfer layer 31 and semiconductor oxide nitride layer 32.
As shown in Figure 2, the particle diameter of zinc oxide semi-conductor is at about 5nm for the HRTEM figure of the zinc oxide semi-conductor quantum dot that the present embodiment obtains.
In the present embodiment untreated with the quantum efficiency comparison diagram of processing blades as shown in Figure 3, within the scope of wavelength 300-1100nm, quantum efficiency is all significantly increased, especially ultraviolet and visible region, and wavelength is between 900-1000 nanometer.
In the present embodiment, untreated with photoelectric conversion efficiency (PCE) comparison diagram of processing blades as shown in Figure 4, open circuit voltage slightly promotes, and short circuit current improves nearly 9%, and final photoelectric conversion efficiency improves 16.5%.
Embodiment 2
The preparation method of the present embodiment is identical with embodiment 1, and difference is step 1) not previously prepared semiconductor-quantum-point colloid.But directly nano-graphite is distributed in the ethanol containing surfactant (PVP).
Embodiment 3
The preparation method of the present embodiment is identical with embodiment 1, and difference is step 1) source metal is lead tetrachloride, concentration is 0.5mol/L, and surfactant concentration is the carboxymethyl cellulose of 13.4g/L, and the concentration of nano-graphite is 10mg/L.
In the present embodiment, untreated with photoelectric conversion efficiency (PCE) comparison diagram of processing blades as shown in Figure 5, open circuit voltage slightly promotes, and short circuit current improves about 3.3%, and final photoelectric conversion efficiency improves 9.6%.
Embodiment 4
The preparation method of the present embodiment is identical with embodiment 1, and difference is step 1) graphite chooses native graphite, and concentration is 15mg/L.
Embodiment 5
The preparation method of the present embodiment is identical with embodiment 1, and difference is step 1) source metal acetic acid zinc concentration is 0.01mol/L, solvent is methyl alcohol, and surfactant concentration is 3.3g/L, and graphite chooses details structure graphite, and concentration is 60mg/L.
Embodiment 6
The preparation method of the present embodiment is identical with embodiment 1, and difference is step 1) source metal is chromium chloride, concentration is 0.05mol/L, and the concentration of surface active agent polyvinyl alcohol is 5g/L, and the concentration of nano-graphite is 33mg/L.
Embodiment 7
The preparation method of the present embodiment is identical with embodiment 1, and difference is step 3) number of operations of the deposition growing of semiconductor layer and electron transfer layer is 3 times.
In the present embodiment, untreated with photoelectric conversion efficiency (PCE) comparison diagram of processing blades as shown in Figure 6, open circuit voltage slightly promotes, and short circuit current improves about 6.1%, and final photoelectric conversion efficiency improves 13.9%.
Embodiment 8
The preparation method of the present embodiment is identical with embodiment 1, and difference is step 3) number of operations of semiconductor layer and electron transfer layer deposition growing is 1 time, the reaction time is 90s.
Embodiment 9
The preparation method of the present embodiment is identical with embodiment 1, and difference is step 3) number of operations of semiconductor layer and electron transfer layer deposition growing is 3 times, the reaction time is 90s.
The particle diameter of the colloid composite nano materials of embodiment 2 ~ 6 gained obviously increases, it is not quantum dot prepared by embodiment 1, thus weaken quantum effect effect on photovoltaic cells, greatly reduce the quantum efficiency of composite heterogenous junction crystal silicon chip, nano-graphite electron transfer layer role there just is not embodiment 1 obvious yet.In embodiment 7 ~ 9, along with the increase of sedimentation time and number of times, particle diameter also increases thereupon even reunites, and have impact on quantum efficiency and is also unfavorable for that electron transfer layer plays a role.
Above-mentioned is can understand and use invention for ease of those skilled in the art to the description of embodiment.Person skilled in the art obviously easily can make various amendment to these embodiments, and General Principle described herein is applied in other embodiments and need not through performing creative labour.Therefore, the invention is not restricted to above-described embodiment, those skilled in the art, according to announcement of the present invention, do not depart from improvement that scope makes and amendment all should within protection scope of the present invention.
Claims (10)
1. the Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer, front electrode, anti-reflection layer, N-type silicon, P-type silicon and back electrode that this battery stratiform is laid, it is characterized in that, between anti-reflection layer and N-type silicon, be provided with the composite bed that one deck is made up of graphite and semiconductor-quantum-point.
2. a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer according to claim 1, it is characterized in that, described graphite is one or more in native graphite, electrode graphite, fine graphite or nano-graphite.
3. a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer according to claim 1, it is characterized in that, described semiconductor-quantum-point is the one in zinc oxide, lead oxide, tin oxide, chromium oxide or antimony oxide.
4. a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer according to claim 1, is characterized in that, described photovoltaic cell is the one in crystal silicon battery, dye-sensitized cell, organic thin film cells or perovskite battery.
5. a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer according to claim 1, it is characterized in that, the composite bed be made up of graphite and semiconductor-quantum-point is deposited on N-type silicon, and the size controlling of the composite bed be made up of graphite and semiconductor-quantum-point is at 1 ~ 500nm.
6., as claimed in claim 1 based on a preparation method for the Multiple Quantum Well photovoltaic cell of nano-graphite electron transfer layer, it is characterized in that, comprise the following steps:
1) semiconductor-quantum-point colloidal sol is prepared: be made into semiconductor-quantum-point colloidal sol with semiconductor alloy source, solvent and surfactant, wherein the concentration of semiconductor alloy ion is 0.01-0.5mol/L, and the concentration of surfactant is 3.3-13.4g/L;
2) in semiconductor-quantum-point colloidal sol, add nanoscale graphite carbon source, the concentration making graphite is 10-60mg/L, fully stirs, powerful ultrasonic with the particle diameter shearing colloidal sol, obtains the composite colloid of graphite and semiconductor-quantum-point;
3) preliminary treatment of crystal silicon chip: N-type silicon chip be impregnated in cleaning fluid and clean, removes greasy dirt and the silicon dioxide layer on N-type silicon chip surface;
4) deposition growing of semiconductor layer and electron transfer layer: the N-type silicon chip after cleaning is impregnated into step 2) deposition growing semiconductor layer and electron transfer layer in gained composite colloid, the composite bed be namely made up of graphite and semiconductor-quantum-point;
5) short annealing process: to step 4) composite bed that is made up of graphite and semiconductor-quantum-point of gained carries out short annealing process;
6) the completing of resultant battery sheet: through the N-type silicon chip of above-mentioned process again by cell piece manufacture craft, through etching, evaporation antireflective film and make electrode, obtains the final Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer.
7. the preparation method of a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer according to claim 6, it is characterized in that, described semiconductor alloy source is selected from the one in zinc acetate, lead acetate, butter of tin, chromium chloride or antimony acetate.
8. the preparation method of a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer according to claim 6, it is characterized in that, described solvent is selected from the one in water, methyl alcohol, ethanol, acetone or toluene.
9. the preparation method of a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer according to claim 6, it is characterized in that, described surfactant is selected from the one in carboxymethyl cellulose, polyvinyl alcohol, polyethylene, polyvinylpyrrolidone, stearic acid monoglyceride or glyceryl tristearate.
10. the preparation method of a kind of Multiple Quantum Well photovoltaic cell based on nano-graphite electron transfer layer according to claim 6, it is characterized in that, described cleaning fluid is hydrofluoric acid solution.
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