CN105244316A - Mask-assisted method for preparing porous GaN layer - Google Patents
Mask-assisted method for preparing porous GaN layer Download PDFInfo
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- CN105244316A CN105244316A CN201510675079.2A CN201510675079A CN105244316A CN 105244316 A CN105244316 A CN 105244316A CN 201510675079 A CN201510675079 A CN 201510675079A CN 105244316 A CN105244316 A CN 105244316A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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Abstract
The invention relates to a mask-assisted method for preparing a porous GaN layer, namely a method for preparing the porous GaN layer through corrosion after manufacturing a mask through photoetching on a gallium nitride (GaN) substrate. According to the method, a bar mask pattern is photoetched on the GaN substrate; a SiO2 thin film is plated on the substrate with the mask pattern by a radio frequency magnetron sputtering method; a photoresist is removed through acetone cleaning; and SiO2 on the photoresist is also removed to obtain a SiO2 bar mask; relatively short GaN epitaxial growth is carried out by HVPE equipment; two technologies are successively adopted in growth; the first technology is relatively high in longitudinal growth ability; the second technology is relatively high in lateral growth ability; the growth time of the two technologies needs to be strictly controlled; and the SiO2 mask is not completely covered by the GaN, so that the porous GaN layer is obtained by corroding the SiO2 with hydrofluoric acid (HF); and with prepared porous GaN layer as a weak layer, the GaN crystal growth technology is further carried out. The method has the technical effects that the prepared porous GaN layer is uniform and can achieve self-peeling by assisting the GaN; and the preparation method is simple and controllable.
Description
Technical field
The present invention relates to a kind of method preparing porous GaN layer, particularly a kind of mask assists the method preparing porous GaN layer.
Background technology
Gallium nitride (GaN) is a kind of direct band gap semiconductor material with wide forbidden band, with gap length degree is 3.4eV, the features such as its higher puncture voltage, extensive chemical stability, corrosion-and high-temp-resistant, make GaN all have broad application prospects at the photoelectric field such as LED, ultraviolet detector and the microelectronic such as high temperature high power, high-frequency element.The growth of GaN is main at present to be made substrate with sapphire or other monocrystal materials and is obtained by vapour phase epitaxy method, because Free-standing GaN has the advantage of its uniqueness in element manufacturing, so need substrate and epitaxial loayer isolation technics, existing lift-off technology comprises corrosion stripping, laser lift-off, the stripping of note hydrogen and certainly peels off, wherein corrode stripping process epitaxial layers also can suffer erosion, interface roughness is peeled off and integrality can not ensure after laser lift-off, note hydrogen and peel off the restriction that can be subject to inject the degree of depth, what commonly use the most so current is from lift-off technology.Be the making of weak floor from lift-off technology key, utilize porous GaN layer as weak floor when peeling off, not only can alleviate the stress in growth, and because the existence of thermal mismatching can make to realize between substrate and epitaxial loayer being separated in temperature-fall period.Therefore, in current Free-standing GaN crystal preparation, the making of porous GaN has become auxiliary GaN from the key technology peeled off.
Summary of the invention
Current semicon industry study hotspot has been become from lift-off technology in view of GaN growth, the present invention utilizes SiO2 mask corrosion auxiliary making porous GaN layer, in order to assist GaN from stripping technology as weak floor, concrete technical scheme is, a kind of mask assists the method preparing porous GaN layer, it is characterized in that: processing step is
(1) on GaN base sheet, SiO2 striped-shaped mask is prepared
A) utilize HVPE equipment, 2inchc surface sapphire grows one deck about 5 μm of thick GaN film, as substrate,
B) photoetching striped-shaped mask, sol evenning machine is utilized evenly to apply one deck photoresist on GaN base sheet, then drying glue 10min under heating platform about 70 ° of C, then adopt striped-shaped mask version to expose on mask aligner, the time for exposure is between 20 ~ 30s, after end exposure, proportion of utilization is that the KOH aqueous solution of 1:50 or other developer solutions develop, and developing time controls at about 1min, finally under 70 ° of C, dries solid glue, bar shaped photo etched mask can be obtained
C) magnetic control sputtering device is opened, by regulating sputtering power and sputtering time to be coated with the SiO2 film that thickness is 100 ~ 200nm on the GaN base sheet with mask pattern,
D) take out plated film sheet, then ultrasonic cleaning under acetone soaks, remove SiO2 on photoresist and glue, then through rinsed with deionized water, namely on GaN base sheet, obtain SiO2 striped-shaped mask,
(2) utilize and there is mask pattern GaN base sheet prepare porous GaN layer
A) the GaN mask substrate prepared in (1) is put into HVPE equipment, is warmed up to 1020 ° of C,
B) under N2 does carrier gas condition, first adopt the technique that longitudinal growth ability is stronger, by controlling growth time, reaching and making GaN growth height be no more than mask height,
C) convert loading process, adopt the stronger technique of ability of cross growth, ensure that the laterally overgrown of GaN not exclusively covers SiO2 mask, namely gap is left at top,
D) treat that GaN epitaxy growth takes out print after complete, put into 1:10 concentration HF aqueous acid, HF acid infiltrates SiO2 mask layer from top clearance, and the final SiO2 removed in GaN epitaxial layer, obtains loose structure.
Technique effect of the present invention is, the porous GaN layer of making is even, and can realize auxiliary GaN from peeling off, manufacture method is simple, controlled.
Accompanying drawing explanation
Fig. 1 is process chart of the present invention.
Embodiment
Mask assists the method preparing porous GaN layer, and processing step is,
(1) on GaN base sheet, SiO2 striped-shaped mask is prepared
A) utilize HVPE equipment, 2inchc surface sapphire grows one deck about 5 μm of thick GaN film, as substrate,
B) photoetching striped-shaped mask, sol evenning machine is utilized evenly to apply one deck photoresist on GaN base sheet, then drying glue 10min under heating platform about 70 ° of C, then adopts striped-shaped mask version to expose on mask aligner, time for exposure 25s, after end exposure, proportion of utilization is that the KOH aqueous solution of 1:50 or other developer solutions develop, and developing time controls at about 1min, finally under 70 ° of C, dries solid glue, bar shaped photo etched mask can be obtained
C) magnetic control sputtering device is opened, by regulating sputtering power and sputtering time to be coated with the SiO2 film that thickness is 200nm on the GaN base sheet with mask pattern,
D) take out plated film sheet, then ultrasonic cleaning under acetone soaks, remove SiO2 on photoresist and glue, then through rinsed with deionized water, namely on GaN base sheet, obtain SiO2 striped-shaped mask,
(2) utilize and there is mask pattern GaN base sheet prepare porous GaN layer
A) the GaN mask substrate prepared in (1) is put into HVPE equipment, is warmed up to 1020 ° of C,
B) under N2 does carrier gas condition, first adopt the technique that longitudinal growth ability is stronger, by controlling growth time, reaching and making GaN growth height be no more than mask height,
C) convert loading process, adopt the stronger technique of ability of cross growth, ensure that the laterally overgrown of GaN not exclusively covers SiO2 mask, namely gap is left at top,
D) treat that GaN epitaxy growth takes out print after complete, put into 1:10 concentration HF aqueous acid, HF acid infiltrates SiO2 mask layer from top clearance, and the final SiO2 removed in GaN epitaxial layer, obtains loose structure.
The porous GaN print completed being put into HVPE equipment, the GaN thick film epitaxial growth after proceeding, assisting using porous layer as weak floor GaN from peeling off.
Claims (1)
1. mask assists the method preparing porous GaN layer, it is characterized in that: processing step is,
(1) on GaN base sheet, SiO2 striped-shaped mask is prepared
A) utilize HVPE equipment, 2inchc surface sapphire grows one deck about 5 μm of thick GaN film, as substrate,
B) photoetching striped-shaped mask, sol evenning machine is utilized evenly to apply one deck photoresist on GaN base sheet, then drying glue 10min under heating platform about 70 ° of C, then adopt striped-shaped mask version to expose on mask aligner, the time for exposure is between 20 ~ 30s, after end exposure, proportion of utilization is that the KOH aqueous solution of 1:50 or other developer solutions develop, and developing time controls at about 1min, finally under 70 ° of C, dries solid glue, bar shaped photo etched mask can be obtained
C) magnetic control sputtering device is opened, by regulating sputtering power and sputtering time to be coated with the SiO2 film that thickness is 100 ~ 200nm on the GaN base sheet with mask pattern,
D) take out plated film sheet, then ultrasonic cleaning under acetone soaks, remove SiO2 on photoresist and glue, then through rinsed with deionized water, namely on GaN base sheet, obtain SiO2 striped-shaped mask,
(2) utilize and there is mask pattern GaN base sheet prepare porous GaN layer
A) the GaN mask substrate prepared in (1) is put into HVPE equipment, is warmed up to 1020 ° of C,
B) under N2 does carrier gas condition, first adopt the technique that longitudinal growth ability is stronger, by controlling growth time, reaching and making GaN growth height be no more than mask height,
C) convert loading process, adopt the stronger technique of ability of cross growth, ensure that the laterally overgrown of GaN not exclusively covers SiO2 mask, namely gap is left at top,
D) treat that GaN epitaxy growth takes out print after complete, put into 1:10 concentration HF aqueous acid, HF acid infiltrates SiO2 mask layer from top clearance, and the final SiO2 removed in GaN epitaxial layer, obtains loose structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510675079.2A CN105244316A (en) | 2015-10-19 | 2015-10-19 | Mask-assisted method for preparing porous GaN layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510675079.2A CN105244316A (en) | 2015-10-19 | 2015-10-19 | Mask-assisted method for preparing porous GaN layer |
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| CN105244316A true CN105244316A (en) | 2016-01-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123589A (en) * | 2017-06-26 | 2017-09-01 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-standing gan layer and preparation method thereof |
| CN107130293A (en) * | 2016-02-29 | 2017-09-05 | 信越化学工业株式会社 | The manufacture method of cvd diamond substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1441982A (en) * | 2000-06-19 | 2003-09-10 | 日亚化学工业株式会社 | Nitride semiconductor substrate and method for manufacturing same, and nitride semiconductor device using said substrate |
| US20070096147A1 (en) * | 2005-11-02 | 2007-05-03 | Hitachi Cable, Ltd. | Nitride-based semiconductor substrate and method of making the same |
| CN104094421A (en) * | 2012-02-06 | 2014-10-08 | 首尔伟傲世有限公司 | Semiconductor element separation method using nanoporous structure |
-
2015
- 2015-10-19 CN CN201510675079.2A patent/CN105244316A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1441982A (en) * | 2000-06-19 | 2003-09-10 | 日亚化学工业株式会社 | Nitride semiconductor substrate and method for manufacturing same, and nitride semiconductor device using said substrate |
| US20070096147A1 (en) * | 2005-11-02 | 2007-05-03 | Hitachi Cable, Ltd. | Nitride-based semiconductor substrate and method of making the same |
| CN104094421A (en) * | 2012-02-06 | 2014-10-08 | 首尔伟傲世有限公司 | Semiconductor element separation method using nanoporous structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107130293A (en) * | 2016-02-29 | 2017-09-05 | 信越化学工业株式会社 | The manufacture method of cvd diamond substrate |
| CN107123589A (en) * | 2017-06-26 | 2017-09-01 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-standing gan layer and preparation method thereof |
| CN107123589B (en) * | 2017-06-26 | 2020-01-07 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
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Application publication date: 20160113 |