CN105220049B - A kind of lamellar diamond reinforced metal-base composite material and preparation method - Google Patents
A kind of lamellar diamond reinforced metal-base composite material and preparation method Download PDFInfo
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Abstract
A kind of lamellar diamond reinforced metal-base composite material and preparation method, described composite is to be provided with diamond wafers in parent metal, and diamond wafers and parent metal are metallurgical binding；Its preparation method, it is using founding, infiltration, cold-rolled sintered, one of hot pressed sintering, plasma agglomeration technique, by parent metal or the parent metal that comprises surface modified diamond granule is combined with diamond wafers, obtain the lamellar diamond reinforced metal-base composite material of diamond wafers and parent metal metallurgical binding.The present invention passes through to be distributed lamellar diamond framework in metallic matrix, and add a certain amount of diamond particles in metallic matrix, diamond wafers carry out surface modification using the sandwich composition clamping graphene layer between underlying metal film and facing metal film, this composite is made to have excellent heat conductivility, this composite can be used as Electronic Packaging and heat sink material etc., solves the problems, such as the encapsulation of high temperature, high frequency, high-power electronic device.
Description
Technical field
The invention discloses a kind of preparation method of lamellar diamond reinforced metal-base composite material, belong to composite diamond
Technical field of material.
Background technology
With developing rapidly of hyundai electronicses information technology, the integrated level of electronic devices and components is improved constantly with power consumption, radiating
Problem becomes one of key factor of impact electronic product reliability.The thermal conductivity of traditional electronic package material has been difficult to full
The needs of sufficient modern electronic devices radiating task.Meanwhile, electronic product to miniaturization, lightweight, complicate development also to electricity
Sub- encapsulating material is put forward higher requirement.
In recent years, with diamond for strengthening the metal-base composites of phase, by the thermal conductivity of its superelevation, adjustable heat is swollen
Swollen coefficient, being described as is forth generation New Materials for Electric Packing.But from the point of view of existing market situation, on a large scale should not obtain
With.
The greatest problem that diamond particles enhancing metal-base composites runs into is the tired of the formation of effective heat conduction network
Difficulty, and it is confined to high interface resistance between diamond particles, therefore generally require to fill substantial amounts of diamond particles, can
Make material thermal conductivity have to improve by a small margin, and last heat conductivity is well below the heat conductivility of diamond.For example：Diamond
The thermal conductivity of powder/carbon/carbon-copper composite material mostly is 200～600W/ (m K), diamond to be far below.According to heat conduction theory, composite wood
Exist between matrix and reinforcement in material and connect and two kinds of distributions in parallel, diamond particle reinforced copper-based composite material belongs to
Series model, bortz powder content in the composite needs very high (generally more than 70%) could obtain higher heat conduction
Performance.2008, Russian Ekimov et al. reached under 90～95% maximum conditions in diamond particles mass fraction, and high temperature is high
Pressure sintering is prepared for a kind of new bortz powder/carbon/carbon-copper composite material, and the matrix of this compound material is bortz powder (particle diameter model
Enclose for 0～500 μm), copper makes, as binding agent, the continuous framing structure that diamond formed at high temperature under high pressure, this composite
Thermal conductivity reaches as high as 920W/ (m K).This series model is described, even if diamond content up to more than 90%, due to crystalline substance
There is copper Binder Phase in intergranular, cannot form continuous passage of heat so as to thermal conductivity is far below diamond between diamond.
Germany scientist Thomas Hutsch elaborates to carry out graphite flakes with copper by powder metallurgic method in the literature
Mixing, the method preparing graphite flakes/carbon/carbon-copper composite material using plasma discharge sintering.Prepared composite be in each to
The opposite sex, has shown higher thermal conductivity in the plane in pressure at right angle direction.When the volume fraction of graphite flakes is 50%,
Thermal conductivity in the plane in pressure at right angle direction for the prepared composite is 550W/ (m K).Weidenfeller B etc.
Find during research thermal conductivity filler filled polypropylene, the thermal conductivity of composite is relevant with the distribution of filler.Stratiform Muscovitum is easy
Orientation, when its content is 30%, the thermal conductivity of composite can be increased rapidly to 2.7W/mk by 0.27W/mk.Doped graphite
The composite thermal conductivity of alkene only has 0.4W/mk, and can using the continuous graphene sheet layer thermal conductivity that Raman spectrometer records
Reach 5000W/mk.
Research shows, thermal conductivity on its lamella direction for the High Quality Diamond Film is up to 1000～2000W/ (m
K), relatively low thermal coefficient of expansion (1.0～2.0) × 10-6K.Diamond wafers are therefore used as enhancing and highly thermally conductive gold
Belong to matrix and carry out the thermal conductivity that compound prepared composite is hopeful acquisition superelevation.Chemistry for gas phase depositing diamond film be by
The continuous growth of carbonaceous active group forms, and is tightly combined between diamond crystalses.If using cvd diamond thin slice and high heat conduction gold
Belong to compound and prepare diamond/metal-base composites, cvd diamond thin slice will constitute continuous passage of heat, produce parallel
Heat conduction.The composite of this parallel-connection structure can eliminate thermal resistance circle during traditional diamond/metal-base composites heat transfer in a large number
Face, is expected to its thermal conductivity is greatly improved.
It is heat-conducting copper-based that patent of invention CN102244051A of the present inventor seminar early stage discloses a kind of high-performance orientation
Diamond composite and preparation method thereof：1) diamond rod is inserted in the columnar through holes of Copper substrate, and copper is made by extruding
There is plastic deformation in matrix, so that copper is completely attached to diamond rod coupling；2) by the column of diamond rod insertion Copper substrate
In through hole, then deposit copper in copper sheet along diamond rod direction by electro-deposition techniques, make copper complete cladding diamond rod, with Buddha's warrior attendant
Stone completely attaches to coupling.The copper base diamond composite of this method preparation has preferable orientation heat conductivility, but due to its gold
Wettability extreme difference between hard rock rod and parent metal, two-phase interface combines not tight, between diamond rod and parent metal
Interface defines very big thermal resistance, and its thermal conductivity need further to optimize.
Content of the invention
First technical problem to be solved by this invention is to provide a kind of lamellar enabling super-high heat-conductive diamond intensified
Strong metal based composites.
Second technical problem to be solved by this invention provides one kind to realize this super-high heat-conductive lamellar diamond enhancing gold
The preparation method of metal-matrix composite material.
For solve above-mentioned first technical problem, a kind of present invention lamellar diamond reinforced metal-base composite material, described
Composite be to be provided with diamond wafers in parent metal, diamond wafers and parent metal are metallurgical binding.
A kind of present invention lamellar diamond reinforced metal-base composite material, described diamond wafers phase in parent metal
Mutually it be arranged in parallel, relative position is uniformly arranged or random arrangement.
A kind of present invention lamellar diamond reinforced metal-base composite material, described diamond wafers are selected from tabular, ripple
Any one in wave plate shape, drum；Described diamond wafers are atresia thin slice or porous web plate.
A kind of present invention lamellar diamond reinforced metal-base composite material, described diamond wafers are self-supporting diamond
Thin slice or the lining comprising substrate support diamond wafers；
Described lining supports the substrate single or double of diamond wafers to be coated with continuously fine and close diamond film, and substrate is gold
Belong to, metal substrate cross sectional thickness is 0.005～1mm, sheet metal backing material is selected from tungsten, molybdenum, copper, titanium, silver, Jin Zhong
One kind or be selected from one of tungsten alloy, molybdenum alloy, copper alloy, titanium alloy, silver alloy, billon.
A kind of present invention lamellar diamond reinforced metal-base composite material, described diamond wafers are surface modified diamond
Thin slice；Described surface modified diamond thin slice is that diamond wafers surface is provided with composite membrane, and the effect of composite membrane is
Improve the wettability of diamond and parent metal；Described composite membrane is to be clamped with stone between underlying metal film and facing metal film
Black alkene layer is constituted；Described graphene film adopts chemical gaseous phase depositing process to prepare, and described underlying metal film or facing metal film select
From one of Ni film, Cu film, NiCu alloy film, wherein：Underlying metal film thickness is 30～100nm, facing metal film thickness
For 3～10 μm, graphene layer thickness is 0～10nm.
A kind of present invention lamellar diamond reinforced metal-base composite material, described parent metal is high heat conduction light-weight metal
Material, specifically refers to one of metallic aluminium, copper, silver or one of aluminium alloy, copper alloy, silver alloy.
A kind of present invention lamellar diamond reinforced metal-base composite material, is also distributed with Buddha's warrior attendant in described metallic matrix
Stone granule, diamond particles granularity is 1～200 μm；Described diamond particles and metallic matrix are metallurgical binding；
Described diamond particles are surface modified diamond, and the percentage that described diamond particles account for total composite volume contains
Measure as 0～50%；Described surface modified diamond is in diamond particle surfaces metal lining film layer；Described metallic diaphragm is
The good metallic film with diamond wettability, is chosen in particular from one of crome metal, tungsten, molybdenum, nickel, titanium metallic film；Or
Described metallic diaphragm is composite membrane, and described composite membrane is made up of with surface layer bottom, and described bottom is and diamond profit
Moist good metallic film, is chosen in particular from one of crome metal, tungsten, molybdenum, nickel, titanium metallic film；Described surface layer is metal film,
According to metallic matrix and underlying metal characteristic, the metal film constituting surface layer selects monofilm or multilayer film；The material choosing of metal film
At least one from the vanadium metal good with parent metal and/or underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminum, silver
The monofilm of metal or multilayer film.
For solving above-mentioned second technical problem, a kind of preparation of present invention lamellar diamond reinforced metal-base composite material
Method, random distribution or the equally distributed diamond framework first surface modified diamond thin slice arranged as being parallel to each other；
Then founding, infiltration, cold-rolled sintered, one of hot pressed sintering, plasma agglomeration technique are adopted, by parent metal and diamond
Skeleton is combined, and obtains the lamellar diamond reinforced metal-base composite material of diamond wafers and parent metal metallurgical binding；Or
Using founding, infiltration, cold-rolled sintered, one of hot pressed sintering, plasma agglomeration technique, surface modification will be comprised
The parent metal of diamond particles is combined with diamond framework, obtains the lamellar gold of diamond wafers and parent metal metallurgical binding
Hard rock strengthens metal-base composites.
A kind of preparation method of present invention lamellar diamond reinforced metal-base composite material, surface modified diamond thin slice is
Self-supporting diamond piece or the lining comprising substrate support diamond chip；
Described self-supporting diamond piece adopts chemical gaseous phase depositing process in a side deposition gold of sheet metal substrate
Hard rock, after etched substrate, obtains self-supporting diamond chip, and self-supporting diamond piece thickness is 0.005～1.0mm；Or
Described lining supports diamond chip to adopt chemical gaseous phase depositing process in a side of sheet metal substrate or both sides
Depositing diamond, obtains lining and supports diamond chip, and it is 0.005～1.0mm that lining supports diamond thicknesses of layers in diamond chip；
Described chemical gaseous phase depositing process is selected from heated filament auxiliary law, microwave plasma strengthens method, flame combustion process, direct current are put
One of electrical method, DC arc plasma jet, low pressure radio frequency method, normal-pressure radio-frequency method, electron cyclotron resonace method.
A kind of preparation method of present invention lamellar diamond reinforced metal-base composite material, described lining supports diamond chip,
Before chemical vapour deposition diamond, pretreatment is carried out to metal substrate surface, pretreating process is：
For the sheet metal substrate that can form strong carbide, by sheet metal substrate oil removing, scale removal, electrochemical polish
Afterwards, directly it is soaked in fine diamond powder suspension, carry out ultrasonic wave concussion plantation seed crystal pretreatment；
The sheet metal backing material that strong carbide can be formed is selected from one of W, Mo, Ti, Cr, Ta, Si, Nb；Or
For the sheet metal substrate that can not form strong carbide, for improving the interface cohesion of diamond and core, by piece
Shape metal substrate oil removing, scale removal, after electrochemical polish, using physical vapour deposition (PVD) or electro-deposition techniques in metal substrate surface
Preparation can form the thin film (as thin film such as W, Mo, Ti, Cr, Ta, Si, Nb) of strong carbide, and selected single according to the characteristic of substrate
Layer, multilamellar or alloy film, then, are directly soaked in fine diamond powder suspension and carry out ultrasonic wave concussion plantation seed crystal and locate in advance
Reason；
The metal substrate material that strong carbide can not be formed is selected from one of Cu, Ag, Au, Ni, Al, Co.
A kind of preparation method of present invention lamellar diamond reinforced metal-base composite material, surface modification lamellar diamond and
Surface modified diamond granule realizes table using at least one plating mode in magnetron sputtering, vacuum evaporation, plating, chemical plating
Face is modified.
A kind of preparation method of present invention lamellar diamond reinforced metal-base composite material, described founding is by containing modified gold
Hard rock granule or the parent metal without modified diamond particles are put in graphite jig, then by it in the lump with diamond framework
Put into and in vacuum melting furnace or atmosphere protection smelting furnace, be heated to 400～1300 DEG C of meltings of more than parent metal fusing point, cooling is de-
Mould, obtains lamellar diamond reinforced metal-base composite material；Or
First parent metal is heated in crucible 400～1300 DEG C of more than parent metal fusing point, obtains melting matrix gold
Belong to, directly diamond framework leaching is placed in the parent metal of liquid, or add modified diamond in melting parent metal
Grain, stir after, diamond framework leaching is placed in the parent metal of liquid, cooling, obtains lamellar diamond reinforced metal
Based composites.
A kind of preparation method of present invention lamellar diamond reinforced metal-base composite material, described infiltration is by diamond bone
It is placed in infiltration mould, is preheated, under vacuum or protective atmosphere environment, modified diamond particles will be contained or without modification
The parent metal pressurization infiltration of the molten state of diamond particles, to infiltration mould, is combined with diamond framework, diamond
The preheating temperature of skeleton controls in 400～1100 DEG C of scopes, and infiltration pressure is 8～30MPa, and infiltrating temperature controls in parent metal
More than fusing point 400～1300 DEG C, infiltration temperature retention time is 0.5～4 hour, obtains lamellar diamond and strengthens metal-based compound material
Material.
A kind of preparation method of present invention lamellar diamond reinforced metal-base composite material, described cold-rolled sintered be by matrix
Metal powder or the parent metal powder containing modified diamond particles add in diamond framework, put into cold moudling in mould,
Pressure is 400～800Mpa, is then sintered under vacuum or protective atmosphere, sintering temperature controls attached in parent metal fusing point
375～1083 DEG C closely on the lower side, the sintered heat insulating time is 0.5～4 hour, and cooling and demolding obtains lamellar diamond reinforced metal-base
Composite.
A kind of preparation method of present invention lamellar diamond reinforced metal-base composite material, described hot pressed sintering is by matrix
Metal powder or the parent metal powder containing modified diamond particles add in diamond framework, put into vacuum hotpressing stove or protective atmosphere
Hot pressed sintering in hot pressing furnace, pressure is 30～200Mpa, and sintering temperature controls on the lower side 375～1083 near parent metal fusing point
DEG C, the sintered heat insulating time is 0.5～4 hour, and cooling and demolding obtains lamellar diamond reinforced metal-base composite material.,
A kind of preparation method of present invention lamellar diamond reinforced metal-base composite material, described plasma agglomeration is by base
Body metal powder or the parent metal powder containing modified diamond particles add in diamond framework, after compacting, after compacting, put into etc. from
In sub- sintering furnace, vacuum, pressing pressure is to be sintered under 30～70MPa, and sintering temperature controls below parent metal fusing point
375～1080 DEG C, the sintered heat insulating time is 5～30 minutes.
Inventor according to " water pump " effect to current in nature, dexterously by " heat pump " concept be incorporated into diamond/
In metallic composite, by diamond chip of arranging in a metal, make diamond chip realize metallurgical junction with metal and merge formation simultaneously
Hot-fluid is constantly extracted out as " water pump ", heat in surrounding metal matrix is constantly sucked the Buddha's warrior attendant of arest neighbors by connection structure
It is quickly drawn out in flag.The present invention is based on above-mentioned thinking, from diamond wafers, diamond particles and high heat conduction metal matrix
Compound, each diamond wafers is all equivalent to countless diamond wire laid out in parallel, and therefore, the volume content of diamond increases
Plus；Prepare diamond thin in sheet metal substrate surface, belong to and be integrally formed, preparation efficiency is higher；Can according to practical situation,
Design heat transfer efficiency and heat conduction direction, motility is high；Sheet metal substrate can be designed to the mesh of different-shape, then at it
The continuously fine and close diamond film of surface deposition, that is, obtain the diamond wafers with mesh, thus improving diamond chip further
Combination with metallic matrix；By in one or more layers metal foil good with diamond wettability of diamond wafers coating surface
Film, is then had one or more layers thin film of good wettability again, then is burnt by difference in the preparation of its top layer and metal base
Knot and densification process, there is interface diffusion or anti-to diamond and metallic matrix in the metal of diamond surface or carbide etc.
Should, compound interface bond strength can be made substantially to be strengthened, the thermal conductivity of material can obtain different degrees of improvement；Composite
In preparation process, by the diamond particles after surface modification treatment be added to high-thermal conductive metal material (as aluminum, copper, silver and
Its alloy etc.) in, by densified sintering product metallization processes so as to Dispersed precipitate is in metallic matrix, lamellar Buddha's warrior attendant can be lifted further
The thermal conductivity of stone skeleton reinforced metal-base composite material.In other words, this patent, no matter in terms of composite structure and composition, is gone back
It is all to be made that huge innovation and improvement in terms of preparation method.
Compared with the prior art, a kind of lamellar diamond reinforced metal-base composite material, from diamond wafers, diamond
Granule is combined with high heat conduction metal matrix, has the advantage that：
(1) each diamond wafers is all equivalent to countless diamond wire laid out in parallel, and therefore, the volume content of diamond is big
Big increase；
(2) prepare diamond thin in sheet metal substrate surface, belong to and be integrally formed, preparation efficiency is higher；
(3) heat transfer efficiency and heat conduction direction can be designed according to practical situation, motility is high；
(4) sheet metal substrate can be designed to the mesh of different-shape, then in the continuously fine and close gold of its surface deposition
Diamond film, that is, obtain the diamond wafers with mesh, thus improving the combination of diamond chip and metallic matrix further；
(5) diamond wafers are using the sandwich clamping high heat conduction graphene layer between underlying metal film and facing metal film
Constitute and carry out surface modification, make this composite have excellent heat conductivility；
(6), in composite preparation process, the diamond particles after surface modification treatment are added to high heat conduction gold
Belong in material (as aluminum, copper, silver and its alloy etc.), by densified sintering product metallization processes so as to Dispersed precipitate is in metallic matrix, can
Lifting lamellar diamond framework strengthens the thermal conductivity of metal-base composites further.
Brief description
Accompanying drawing 1a is tabular two dimension diamond wafers uniform arrangement schematic diagram.
Accompanying drawing 1b is tabular two dimension diamond wafers random arrangement structural representation.
Accompanying drawing 2a is that lining supports diamond chip after single sided deposition surface modification.
Accompanying drawing 2b is that lining supports diamond chip after double-sided deposition surface modification.
Accompanying drawing 2c is diamond chip after self-supporting surface modification.
Accompanying drawing 3 is porous web sheetmetal substrat structure schematic diagram.
Accompanying drawing 4 is wave-shape board structural metal substrate schematic cross-sectional view.
Accompanying drawing 5 is cylinder type porous web sheetmetal substrate schematic diagram.
Accompanying drawing 6a is cylindric concentric shafts structural porous web plate metal substrate schematic cross-sectional view.
Accompanying drawing 6b is drum concentric shafts structural porous web plate metal substrate schematic cross-sectional view.
Accompanying drawing 6c is another kind of drum concentric shafts structural porous web plate metal substrate schematic cross-sectional view.
Accompanying drawing 7a, accompanying drawing 7b, accompanying drawing 7c are the diamond thin preparation method in embodiment 2 with cylindrical metal substrate
Schematic diagram.
In accompanying drawing 2,1--- metal substrate, 2--- diamond film, 3--- surface modification of metals film；
In accompanying drawing 7,4--- cylindrical metal substrate, 5--- linear type heated filament, 6--- screw type heated filament or be tubular hot paper tinsel；
Accompanying drawing 7 (b) shows, is deposited in cylindric outer substrate surface and inner surface using hot-wire chemical gas-phase deposition technology
Excellent diamonds, make diamond cover all surface inside and outside substrate, form continuous diamond film.Metal substrate can be carried out even
Continuous rotation.
Specific embodiment
Further describe technical scheme below by specific embodiment.
The embodiment of the present invention is carried out by following technique or step：
(1) early stage process is carried out to sheet metal substrate
Processed according to the following steps：(1) polished using 800# abrasive paper for metallograph, then carried out ultrasonic shake in acetone
Swing cleaning；(2) and then, metal substrate be soaked in fine diamond powder acetone suspension ultrasonic vibration process 30min；
(2) adopt hot-wire chemical gas-phase deposition in the continuously fine and close diamond film of metal substrate surface deposition
Using heat wire method, microwave plasma method, flame method, direct-current discharge method, DC arc plasma jet, low pressure radio frequency
The various chemical gaseous phase depositing process such as method, normal-pressure radio-frequency, electron cyclotron resonace method in two-dimensional metallic substrate surface depositing diamond,
Lining can be obtained and support diamond chip, diamond thicknesses of layers is 0.005～0.5mm.Etching lining supports the lamellar base of diamond chip
After material, lamellar self-supporting diamond piece can be obtained.
(3) self-supporting diamond piece and lining support diamond chip surface modification treatment
Prepared in lamellar diamond surface using any one the plating mode in magnetron sputtering, vacuum evaporation, chemical plating
Ni film/Cu film (thickness is 30～100nm/3～10 μm) or NiCu alloy film (thickness is 3～10 μm)；Then adopt chemistry again
Vapour deposition prepares graphene film in Ni film/Cu film or NiCu alloy film surface, and thickness is 1～50 μm.
(4) arrangement of modified diamond chip
Can also uniformly can be arranged with random distribution
(5) high heat conduction metal-based filling and densification process
The heat treatments such as hot pressed sintering, infiltration or founding or densification process
Embodiment one：
From the tungsten paper tinsel for 0.05mm for the thickness as metal substrate, it is first according to step (1) and metal substrate surface is carried out
Early stage is processed；Then according to step (2) adopts HF CVD depositing diamond film, deposition process parameters：Heated filament is apart from 6mm, matrix
800 DEG C of temperature, 2200 DEG C of hot-wire temperature, deposition pressure 3KPa, sedimentation time 40 hours, CH4/H2Volume flow ratio 1:99, obtain
60 μm of diamond film thickness, that is, obtain diamond wafers；(3) first splashed on belt carcass diamond wafers surface using magnetically controlled sputter method
Penetrate layer of metal Ni film, sputtering power is 150W, pressure 0.4Pa, 300 DEG C of substrate temperature, argon flow amount 20sccm, Ni film thickness
For 1.0 μm；Chemical vapour deposition technique is adopted to deposit a layer graphene film, thicknesses of layers 0.34nm on Ni film surface again；Then
Electroplating technology is adopted to deposit layer of metal Cu film in graphenic surface again, thickness is about 5 μm；(4) by plated surface Ni/ Graphene/
The diamond wafers orientation of Cu is uniformly arranged in mould, arranges apart from 1mm, arrangement mode such as Fig. 1 (a)；Obtain lamellar gold
Hard rock array backbone；(5) fixation of lamellar diamond array backbone is put in mould, fine aluminium is heated in crucible fusing simultaneously
To 800 DEG C, melt is poured in mould, the pressure of the 60Mpa that pressed using hydraulic press, forces aluminum or aluminum alloy melt to soak
Infilter the gap location of diamond wire in skeleton, keep pressure 15 seconds, cooling and demolding, take out composite.The performance test results：
Thermal conductivity is 582W/ (m K).
Embodiment two：
From the Copper Foil for 0.05mm for the thickness as metal substrate, and it is rolled into the circle of a diameter of 12mm, 10mm, 8mm
Tubular.It is first according to step (1) and early stage process is carried out to metal substrate surface；Then according to step (2) adopts HF CVD to deposit
In each barrel-shaped metal substrate surfaces externally and internally depositing diamond film, heated filament arrangement mode is as shown in Figure 7.Deposition process parameters：
Heated filament is apart from 6mm, 850 DEG C of substrate temperature, 2200 DEG C of hot-wire temperature, deposition pressure 3KPa, sedimentation time 50 hours, CH4/H2 body
Long-pending flow-rate ratio 1:99, obtain 100 μm of diamond film thickness, that is, obtain carrying metal substrate diamond chip；(3) adopt magnetron sputtering side
Method sputters layer of metal Cu film in diamond chip surfaces externally and internally, and sputtering power is 150W, pressure 0.4Pa, 300 DEG C of substrate temperature,
Argon flow amount 20sccm, Cu film thickness is 1.0 μm；Chemical vapour deposition technique is adopted to deposit a layer graphene on Cu film surface again
Film, thickness is about 1nm；Then electroplating technology is adopted to deposit one layer of Cu film in graphenic surface again, thickness is about 10 μm；(4) will
The diamond chip of the cylindrical shape with metal substrate of three plated surface Cu/ Graphene/Cu orients uniform row in the way of concentric shafts
It is distributed in mould, arrangement apart from 2mm, that is, obtains lamellar gold hard rock array backbone；(5) fixation of lamellar diamond array backbone is put
Enter in mould, 2 times of Al-Si alloys of diamond framework volume be placed on above skeleton, wherein the mass content of Si is 15%,
It is then placed in heating furnace, 900 DEG C of insulation 30min under high pure nitrogen protection, you can prepared lamellar diamond reinforced metal-base
Composite, heat conductivity is 765W/ (m K).
Embodiment three：
From thickness for 1.5mm silicon chip as flat substrates, it is first according to step (1) and silicon substrate surface is carried out at early stage
Reason；Then according to step (2) adopts HF CVD depositing diamond film, deposition process parameters：Heated filament is apart from 6mm, substrate temperature
900 DEG C, 2300 DEG C of hot-wire temperature, deposition pressure 3KPa, sedimentation time 300 hours, CH4/H2Volume flow ratio 3:97, obtain gold
600 μm of hard rock film thickness, after etching lamellar silicon substrate, obtains lamellar self-supporting diamond；(3) adopt magnetically controlled sputter method in gold
Hard rock piece surface first sputters layer of metal Ni film, and sputtering power is 200W, pressure 0.3Pa, 350 DEG C of substrate temperature, argon flow amount
50sccm, Ni film thickness is 0.5 μm；Again graphene film is prepared on Ni film surface using chemical vapour deposition technique, thickness is
0.34nm, then adopts electro-deposition techniques to prepare one layer of Cu film, 5 μm of thicknesses of layers in graphene film layer surface again；(4) by surface
The full diamond chip orientation of plating Ni/ Graphene/Cu is uniformly arranged in mould, arranging distance 2mm；(5) gap of diamond chip
(Al powder purity is 99.9%, diamond particles pattern rule, particle size for place's filling pure aluminium powder and bortz powder mixed-powder：
80～100 μm), diamond particles are prepared for Mo/Cu composite film using vacuum evaporation technique on surface, and molybdenum evaporation current is
32A, pressure 0.1Pa, 400 DEG C of substrate temperature, chromium film thickness is 0.3 μm, then is evaporated in vacuo layer of metal copper film, and evaporation current is
30A, pressure 0.1Pa, 300 DEG C of substrate temperature, 1.0 μm of thicknesses of layers；Then sample is carried out hot pressed sintering, prepared lamellar Buddha's warrior attendant
Stone reinforced aluminum matrix composites：Sintering temperature is 650 DEG C, sintering pressure 60MPa, temperature retention time 90min, and atmosphere is vacuum.Adopt
It is respectively 1096W/ with the highly directional heat conduction lamellar diamond framework reinforced aluminum matrix composites highest thermal conductivity that this technique is obtained
(m·K).
The data being obtained from above example, the lamellar diamond reinforced metal-base composite material being obtained in this patent
Thermal conductivity up to 1096W/ (m K) hence it is evident that strengthen the thermal conductivity of metal-base composites higher than traditional diamond particles
(100～600W/ (m K)).
Claims (11)
1. a kind of lamellar diamond reinforced metal-base composite material it is characterised in that：Described composite is in parent metal
In be provided with diamond wafers, diamond wafers and parent metal are metallurgical binding；
Described diamond wafers are surface modified diamond thin slice；Described surface modified diamond thin slice is in diamond wafers
Surface is provided with composite membrane；Described composite membrane is to be clamped with graphene layer between underlying metal film and facing metal film to constitute.
2. a kind of lamellar diamond reinforced metal-base composite material according to claim 1 it is characterised in that：Described gold
Hard rock thin slice is arranged in parallel in parent metal, and relative position is uniformly arranged or random arrangement.
3. a kind of lamellar diamond reinforced metal-base composite material according to claim 2 it is characterised in that：Described gold
Any one in tabular, wave tabular, drum of hard rock thin slice；Described diamond wafers are atresia thin slice or many
Hole pattern plate.
4. a kind of lamellar diamond reinforced metal-base composite material according to claim 3 it is characterised in that：Described gold
Hard rock thin slice is self-supporting diamond thin slice or the lining comprising substrate supports diamond wafers；
Described lining supports the substrate single or double of diamond wafers to be coated with continuously fine and close diamond film, and substrate is metal,
Metal substrate cross sectional thickness be 0.005 ~ 1mm, sheet metal backing material be selected from tungsten, molybdenum, copper, titanium, silver, gold in one
Plant or be selected from one of tungsten alloy, molybdenum alloy, copper alloy, titanium alloy, silver alloy, billon.
5. a kind of lamellar diamond reinforced metal-base composite material according to claim 1-4 any one, its feature exists
In：Described graphene layer adopts chemical gaseous phase depositing process to prepare, and described underlying metal film or facing metal film are selected from Ni film, Cu
One of film, NiCu alloy film, wherein：Underlying metal film thickness is 30 ~ 100nm, and facing metal film thickness is 3 ~ 10 μm,
Graphene layer thickness is 0.34 ~ 10nm.
6. a kind of lamellar diamond reinforced metal-base composite material according to claim 5 it is characterised in that：Described base
Body metal is selected from aluminum in high heat conduction lightweight metal material, copper, one of silver or aluminium alloy, copper alloy, silver alloy
Kind.
7. a kind of lamellar diamond reinforced metal-base composite material according to claim 6 it is characterised in that：Described
Diamond particles are also distributed with, diamond particles granularity is 1 ~ 200 μm in metallic matrix；Described diamond particles and Metal Substrate
Body is metallurgical binding；Described diamond particles are surface modified diamond, and described diamond particles account for total composite volume
Percentage composition is 0 ~ 50%；Described surface modified diamond is in diamond particle surfaces metal lining film layer；Described metal film
One of chromium in certainly good with the diamond wettability metallic film of layer choosing, tungsten, molybdenum, nickel, titanium metallic film；Or
Described metallic diaphragm is composite membrane, and described composite membrane is made up of with surface layer bottom, and described bottom is selected from and diamond moistening
One of crome metal, tungsten, molybdenum, nickel, titanium metallic film in the good metallic film of property；Described surface layer is metal film, according to metal
Matrix and underlying metal characteristic, the metal film constituting surface layer selects monofilm or multilayer film；The material of metal film is selected from and matrix
The list of at least one metal in metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminum, silver
Tunic or multilayer film.
8. preparation a kind of preparation method of lamellar diamond reinforced metal-base composite material as claimed in claim 1, its feature
It is：Random distribution or the equally distributed diamond framework first surface modified diamond thin slice arranged as being parallel to each other；
Then founding, infiltration, cold-rolled sintered, one of hot pressed sintering, plasma agglomeration technique are adopted, by parent metal and diamond
Skeleton is combined, and obtains the lamellar diamond reinforced metal-base composite material of diamond wafers and parent metal metallurgical binding；Or
Using founding, infiltration, cold-rolled sintered, one of hot pressed sintering, plasma agglomeration technique, surface modification Buddha's warrior attendant will be comprised
The parent metal of stone granule is combined with diamond framework, obtains the lamellar diamond of diamond wafers and parent metal metallurgical binding
Strengthen metal-base composites.
9. the preparation method of a kind of lamellar diamond reinforced metal-base composite material according to claim 8, its feature exists
In：Surface modified diamond thin slice is self-supporting diamond piece or the lining comprising substrate supports diamond chip；
Described self-supporting diamond piece adopts chemical gaseous phase depositing process in a side depositing diamond of sheet metal substrate,
After etched substrate, obtain self-supporting diamond chip, self-supporting diamond piece thickness is 0.005 ~ 0.5mm；Or
Described lining supports diamond chip to adopt chemical gaseous phase depositing process to deposit in a side of sheet metal substrate or both sides
Diamond, obtains lining and supports diamond chip, and it is 0.005 ~ 0.5mm that lining supports diamond thicknesses of layers in diamond chip；
Described chemical gaseous phase depositing process is selected from heated filament auxiliary law, microwave plasma strengthens method, flame combustion process, direct-current discharge
One of method, DC arc plasma jet, low pressure radio frequency method, normal-pressure radio-frequency method, electron cyclotron resonace method.
10. the preparation method of a kind of lamellar diamond reinforced metal-base composite material according to claim 9, its feature exists
In：Described lining supports diamond chip, before chemical vapour deposition diamond, carries out pretreatment to metal substrate surface, pre- place
Science and engineering skill is：
For the sheet metal substrate that can form strong carbide, after sheet metal substrate oil removing, scale removal, electrochemical polish, directly
Connect and be soaked in fine diamond powder suspension, carry out ultrasonic wave concussion plantation seed crystal pretreatment；
The sheet metal backing material that strong carbide can be formed is selected from one of W, Mo, Ti, Cr, Ta, Si, Nb；Or
For the sheet metal substrate that can not form strong carbide, for improving the interface cohesion of diamond and core, by lamellar gold
Belong to substrate oil removing, scale removal, after electrochemical polish, prepared in metal substrate surface using physical vapour deposition (PVD) or electro-deposition techniques
The thin film of strong carbide can be formed, and monolayer, multilamellar or alloy film are selected according to the characteristic of substrate, then, directly be soaked in micro-
Carry out ultrasonic wave concussion plantation seed crystal pretreatment in fine diamond powder suspension；
The metal substrate material that strong carbide can not be formed is selected from one of Cu, Ag, Au, Ni, Al, Co.
A kind of 11. preparation methoies of lamellar diamond reinforced metal-base composite material according to claim 8, its feature exists
In：Surface modification lamellar diamond and surface modified diamond granule are using in magnetron sputtering, vacuum evaporation, plating, chemical plating
At least one plating mode realize surface modification.
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